DE102013200308A1 - Bonddraht und Verfahren zur Herstellung einer Bondverbindung - Google Patents

Bonddraht und Verfahren zur Herstellung einer Bondverbindung Download PDF

Info

Publication number
DE102013200308A1
DE102013200308A1 DE102013200308.0A DE102013200308A DE102013200308A1 DE 102013200308 A1 DE102013200308 A1 DE 102013200308A1 DE 102013200308 A DE102013200308 A DE 102013200308A DE 102013200308 A1 DE102013200308 A1 DE 102013200308A1
Authority
DE
Germany
Prior art keywords
bonding wire
filaments
matrix
melting temperature
filament
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102013200308.0A
Other languages
English (en)
Inventor
Olaf Hohlfeld
Guido Bönig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE102013200308.0A priority Critical patent/DE102013200308A1/de
Priority to CN201410012444.7A priority patent/CN103928418B/zh
Publication of DE102013200308A1 publication Critical patent/DE102013200308A1/de
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45025—Plural core members
    • H01L2224/45028—Side-to-side arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45155—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/4516—Iron (Fe) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45169—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45171—Chromium (Cr) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45173—Rhodium (Rh) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45176—Ruthenium (Ru) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45178—Iridium (Ir) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/4518—Molybdenum (Mo) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45181—Tantalum (Ta) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45184—Tungsten (W) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45217—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45218—Zinc (Zn) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45217—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45223—Magnesium (Mg) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45217—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45224—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45239—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45244—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45247—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45255—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/4526—Iron (Fe) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45263—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45264—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45263—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45269—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45263—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45271—Chromium (Cr) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45263—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45273—Rhodium (Rh) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45263—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45276—Ruthenium (Ru) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45263—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45278—Iridium (Ir) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45263—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/4528—Molybdenum (Mo) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45263—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45281—Tantalum (Ta) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45263—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45284—Tungsten (W) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4556—Disposition, e.g. coating on a part of the core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45618—Zinc (Zn) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45623—Magnesium (Mg) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45647—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45655—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/4566—Iron (Fe) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45666—Titanium (Ti) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45669—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45671—Chromium (Cr) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45673—Rhodium (Rh) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45676—Ruthenium (Ru) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45678—Iridium (Ir) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/4568—Molybdenum (Mo) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45681—Tantalum (Ta) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Ropes Or Cables (AREA)

Abstract

Ein Bonddraht (1) umfasst ein oder mehrere Filamente (10–17) aus einem ersten Material, das bzw. die in eine Matrix (20) aus einem zweiten Material eingebettet ist bzw. sind. Ein jedes der Filamente (10–17) weist bei einem Druck von 1013,25 hPa eine erste Schmelztemperatur auf. Die Matrix (20) weist bei einem Druck von 1013,25 hPa eine zweite Schmelztemperatur auf. Die erste Schmelztemperatur ist um wenigstens 450°C höher als die zweite Schmelztemperatur.

Description

  • Die Erfindung betrifft Bonddrahtverbindungen. Bonddrähte werden u. a. in leistungselektronischen Modulen und anderen elektrischen Baugruppen eingesetzt. Sie unterliegen dabei zum Teil sehr hohen elektrischen Strömen. So kann es beispielsweise in bestimmten Zuständen der jeweiligen Schaltung zu hohen Stoßstrombelastungen des Bonddrahtes kommen, wodurch der Bonddraht explosionsartig zerstört werden kann. Im Extremfall kann dies zu einer Druckwelle führen, aufgrund der die Baugruppe zerplatzt, beispielsweise wenn der Bonddraht hermetisch dicht in einem Gehäuse der Baugruppe angeordnet ist. Außerdem kann ein Lichtbogen entstehen, durch den eine Vergussmasse, beispielsweise eine Silikonvergussmasse, in die der Bonddraht eingebettet ist, verdampft und/oder aus dem Gehäuse herauskatapultiert wird. Das dabei auftretende Plasma kann im ungünstigsten Fall auch zu elektrischen Kurzschlüssen innerhalb und/oder außerhalb der Baugruppe führen.
  • Die Aufgabe der vorliegenden Erfindung besteht darin, eine Möglichkeit bereitzustellen, mit der sich die Gefahr für eine derartige Havarie einer elektrischen Baugruppe vermeiden oder deren Auswirkung zumindest verringern lässt. Eine weitere Aufgabe besteht darin, ein Verfahren zur Herstellung einer Baugruppe mit entsprechend verbesserten Eigenschaften bereitzustellen. Diese Aufgaben werden durch einen Bonddraht gemäß Patentanspruch 1 bzw. durch ein Verfahren zur Herstellung einer elektrischen Baugruppe gemäß Patentanspruch 17 gelöst. Ausgestaltungen und Weiterbildungen der Erfindung sind Gegenstand von Unteransprüchen.
  • Ein Bonddraht umfasst ein oder mehrere Filamente aus einem ersten Material, das oder die in eine Matrix aus einem zweiten Material eingebettet ist bzw. sind. In diesem Sinne wird unter einem 'Filament' ein zusammenhängender Abschnitt verstanden, der aus dem ersten Material besteht und der sich über die gesamte Länge des Bonddrahtes in dessen Verlaufsrichtung erstreckt. Ein jedes der Filamente weist bei einem Druck von 1013,25 hPa eine erste Schmelztemperatur auf. Entsprechend weist die Matrix bei einem Druck von 1013,25 hPa eine zweite Schmelztemperatur auf. Die erste Schmelztemperatur ist um mehr aus 450°C höher als die zweite Schmelztemperatur.
  • Durch die stark unterschiedlichen Schmelztemperaturen wird erreicht, dass im Fall einer elektrischen Überlastung des Bonddrahtes zunächst die Matrix aufzuschmelzen und zu verdampfen beginnt, während das Filament oder die Filamente nicht oder gegenüber dem Aufschmelzen der Matrix erst verzögert aufgeschmolzen wird bzw. werden. Durch diese Maßnahme wird erreicht, dass der durch das Aufschmelzen und Verdampfen des Bonddrahtes auftretende Gradient des Druckaufbaus geringer ist als dies bei der Verwendung eines herkömmlichen Bonddrahtes der Fall wäre. Bei dem ersten Material und/oder dem zweiten Material kann es sich insbesondere um Metalle handeln, sowie um Legierungen, die ausschließlich aus Metallen bestehen oder die zumindest ein Metall enthalten. Optional können in die Matrix auch nichtmetallische Füllstoffe eingebettet sein, beispielsweise Füllstoffe aus Silizium, aus Kohlenstoff, oder aus Keramik wie z. B. Siliziumkarbid, Aluminumnitrid, Aluminiumoxid, oder aus einer beliebigen Mischung mit den genannten Materialien, um die Ziehfähigkeit des Bonddrahtes zu verbessern. Ebenfalls optional können die Füllstoffe einen kleineren linearen thermischen Ausdehnungskoeffizienten aufweisen als die Matrix, um den thermischen Ausdehnungskoeffizienten des Bonddrahtes insgesamt zu reduzieren, beispielsweise eine gewisse Anpassung an den Ausdehnungskoeffizienten an einen Gegenstand wie z. B. einen Halbleiterchip zu erreichen, an den der Bonddraht gebondet werden soll, und der einen geringeren linearen thermischen Ausdehnungskoeffizienten aufweist als die Matrix.
  • Bei dem Verfahren zur Herstellung einer elektrischen Baugruppe wird ein Bonddraht mit dem vorangehend erläuterten Aufbau derart an eine Metallisierung eines Trägers gebondet, dass der Bonddraht die Metallisierung unmittelbar kontaktiert.
  • Die Erfindung wird nachfolgend unter Bezugnahme auf die beigefügten Figuren anhand von Ausführungsbeispielen erläutert. Die Darstellung der Figuren ist nicht maßstäblich. Es zeigen:
  • 1A eine perspektivische Ansicht eines Abschnittes eines Bonddrahtes mit genau einem Filament.
  • 1B einen Längsschnitt durch den Bonddraht gemäß 1A.
  • 1C einen Querschnitt durch den Bonddraht gemäß den 1A und 1B in einer Schnittebene E1.
  • 2 einen Querschnitt durch einen Bonddraht mit genau einem exzentrisch in dem Bonddraht angeordneten Filament.
  • 3A einen Querschnitt durch einen Bonddraht mit mehreren voneinander beabstandeten Filamenten.
  • 3B einen Längsschnitt durch den Bonddraht gemäß 3A in einer Schnittebene E3.
  • 4 einen Querschnitt durch einen Bonddraht mit nicht-kreisförmigem Querschnitt.
  • 5 einen Querschnitt durch einen Bonddraht mit einem Filament, das einen unregelmäßigen Querschnitt aufweist.
  • 6 einen Querschnitt durch einen rechteckigen Bonddraht mit einem Filament, das ebenfalls einen rechteckigen Querschnitt aufweist.
  • 7 einen Querschnitt durch einen an eine Metallisierung gebondeten Bonddrahtes.
  • 8 eine Tabelle, die die Temperaturdifferenz zwischen Metallen angibt, deren Schmelztemperaturen sich um wenigstens 450°C unterscheiden.
  • 1A zeigt eine perspektivische Ansicht eines Abschnittes eines Bonddrahtes 1. Der Bonddraht 1 weist genau ein Filament 10 aus einem ersten Material auf, das in eine Matrix 20 aus einem zweiten Material eingebettet ist. Der Abschnitt ist zur Vereinfachung der Darstellung als gerader Drahtabschnitt dargestellt, dessen Längsrichtung sich in Richtung z erstreckt. Die Richtungen x und y verlaufen senkrecht zueinander sowie senkrecht zur Verlaufsrichtung des Bonddrahtes 1, die in dem gezeigten Beispiel durch die Richtung z gegeben ist.
  • In den gezeigten Beispielen ist die Längsrichtung des Bonddrahtabschnittes identisch mit dessen Verlaufsrichtung. Grundsätzlich könnte der Bonddraht 1 jedoch auch gekrümmt sein. In diesem Fall wäre die Verlaufsrichtung entlang des Bonddrahtes 1 nicht konstant mit der Folge, dass verschiedene Querschnittsebenen E1, welche sich jeweils senkrecht zur Verlaufsrichtung des Drahtes erstrecken, im Allgemeinen nicht parallel zueinander verlaufen. Für den Fall eines gekrümmten Bonddrahtes 1 erstreckt sich die z-Richtung ortsabhängig jeweils in der entlang des Bonddrahtes 1 veränderlichen Verlaufsrichtung des Bonddrahtes 1.
  • Das Filament 10 weist bei einem Druck von 1013,25 hPa eine erste Schmelztemperatur auf. Entsprechend weist die Matrix 20 bei einem Druck von 1013,25 hPa eine zweite Schmelztemperatur auf. Die erste Schmelztemperatur ist um wenigstens 450°C höher als die zweite Schmelztemperatur. Als erstes Material für das Filament 10 eignen sich beispielsweise Wolfram (Schmelztemperatur 3390°C) oder Molybdän (Schmelztemperatur 2620°C) oder Palladium (Schmelztemperatur 1550°C), oder z.B. eine Legierung, die zu wenigstens 90 Atom% aus einem oder mehreren dieser Materialien besteht. Als zweites Material für die Matrix 20 ist zum Beispiel Aluminium gut geeignet, oder eine Legierung, die zu wenigstens 90 Atom% aus Aluminium besteht, da Aluminium wegen seiner hohen Duktilität hervorragend für Drahtbonden geeignet ist.
  • 1B zeigt einen Längsschnitt durch den Bonddraht 1 in einer durch die Richtungen z und y definierten Schnittebene E2 (siehe 1C), 1C einen Querschnitt in der Schnittebene E1 (siehe die 1A und 1B), die sich senkrecht zur Verlaufsrichtung des Bonddrahtes 1 erstreckt und die durch die Richtungen x und y definiert ist.
  • In den Ansichten gemäß den 1A, 1B und 1C ist zu erkennen, dass das Filament 10 mittig in der Matrix 20 bzw. in dem Bonddraht 1 verläuft, d.h. die Verlaufsrichtung des Filaments 10 ist identisch mit der Verlaufsrichtung des Bonddrahts 1. Wie beispielhaft gezeigt ist, können der Bonddraht 1 insgesamt und/oder ein Filament 20, jeweils in einer zur Verlaufsrichtung z des Drahtes 1 senkrechten Schnittebene E1, einen kreisförmigen Querschnitt aufweisen. In dem gezeigten Beispiel besitzt der Bonddraht 1 einen Durchmesser D1, das Filament 10 einen Durchmesser D10. Insbesondere können der Bonddraht 1 und/oder ein Filament 10 entlang der Verlaufsrichtung des Bonddrahtes 1 an jeder Stelle im wesentlichen kreisförmige Querschnitte aufweisen.
  • Wie in 1C gezeigt ist, weist das Filament 10 in der Schnittebene E1 eine Querschnittsfläche A10 auf und die Matrix 20 eine Querschnittsfläche A20. Demgemäß ist die gesamte Querschnittsfläche A1 des Bonddrahtes 1 in der Schnittebene E1 durch die Summe von A10 und A20 gegeben.
  • 2 zeigt einen Querschnitt durch einen weiteren Bonddraht 1 in einer zu dessen Längsrichtung z senkrechten Schnittebene. Dieser Bonddraht 1 unterscheidet sich von dem Bonddraht 1 gemäß den 1A, 1B und 1C lediglich dadurch, dass das Filament 10 exzentrisch in der Matrix 20 geordnet ist. Die Verlaufsrichtung des Filaments 10 ist auch hier identisch mit der Verlaufsrichtung des Bonddrahts 1.
  • Wie weiterhin in 3A beispielhaft gezeigt ist, kann ein Bonddraht 1 auch zwei oder mehr Filamente 10 aufweisen, die jeweils aus dem ersten Material bestehen und die, in einer zur Längsrichtung z des Bonddrahtes 1 senkrechten Schnittebene, jeweils vollständig in die Matrix 20 eingebettet sind. In dem gezeigten Beispiel weist der Bonddraht sieben Filamente 11, 12, 13, 14, 15, 16, 17 mit Querschnittsflächen A11, A12, A13, A14, A15, A16, A17 auf, die jeweils aus dem ersten Material bestehen. Generell kann ein Bonddraht 1 jedoch genau ein Filament oder wenigstens zwei Filamente jeweils aus dem ersten Material aufweisen, die sich jeweils über die gesamte Länge des Bonddrahtes 1 erstrecken und deren Verlaufsrichtung jeweils identisch ist mit der Verlaufsrichtung des Bonddrahtes 1. Unabhängig von der Anzahl der Filamente 11, 12, 13, 14, 15, 16, 17 aus dem ersten Material ist die Gesamt-Querschnittsfläche A20, welche sämtliche Filamente 11, 12, 13, 14, 15, 16, 17, die aus dem ersten Material bestehen, in einer zur Verlaufsrichtung des Bonddrahtes 1 senkrechten Schnittebene gleich der Summe der einzelnen Querschnittsflächen A11, A12, A13, A14, A15, A16, A17 dieser Filamente 11, 12, 13, 14, 15, 16, 17 in dieser Schnittebene.
  • Wie in der zugehörigen Schnittansicht gemäß 3B in einer Schnittebene E3 (siehe 3A), welche senkrecht zur Darstellungsebene gemäß 3A verläuft, am Beispiel der Filamente 13, 16 und 17 zu erkennen ist, können sämtliche Filamente eines Bonddrahtes 1, die aus dem zweiten Material bestehen, jeweils dieselbe Verlaufsrichtung aufweisen wie der Bonddraht 1. Die in 3B dargestellte Schnittebene E4 entspricht der Darstellungsebene gemäß 3A.
  • Wie in 3A gezeigt ist, können sämtliche Filamente 11, 12, 13, 14, 15, 16, 17 des Bonddrahtes 1, die jeweils aus dem ersten Material bestehen, in einer zur Verlaufsrichtung des Bonddrahtes 1 senkrechten Schnittebene einen kreisförmigen Querschnitt aufweisen.
  • Davon abweichend müssen Filamente 11, 12, 13, 14, 15, 16, 17 aus dem ersten Material jedoch nicht notwendigerweise kreisförmige Querschnitte aufweisen, was beispielhaft anhand der 4 bis 6 gezeigt ist. Bei dem Beispiel gemäß 4 besitzen weder die Filmente 11, 12, 13, 14, 15, 16, 17 noch der Bonddraht 1 einen kreisförmigen Querschnitt. Bei dem Beispiel gemäß 5 ist nur der Querschnitt des Bonddrahtes 1 insgesamt kreisförmig, nicht jedoch der Querschnitt des einzigen Filaments 10. Bei dem Beispiel gemäß 6 besitzen sowohl der Bonddraht 1 als auch das einzige Filamente 10 einen im Wesentlichen rechteckigen Querschnitt.
  • 7 zeigt einen Querschnitt durch eine Bondstelle, an der ein gemäß den 1A bis 1C ausgebildeter Bonddraht 1 an eine Metallisierung 51 eines Trägers 50 gebondet ist. Der Bonddraht 1 und die Bondstelle sind in einem nur schematisch dargestellten Gehäuse 6 angeordnet, das optional hermetisch dicht ausgebildet sein kann. Ebenfalls optional kann der Bonddraht 1 in eine Vergussmasse, beispielsweise ein Silikongel, eingebettet sein.
  • Bei dem Träger 50 kann es sich beispielsweise um einen Halbleiterkörper eines Halbleiterchips 5 handeln, oder um eine elektrisch isolierende Keramik eines Schaltungsträgers 5. Grundsätzlich kann es sich bei der Metallisierung 51 jedoch um eine Metallisierung einer beliebigen elektrischen anzuschließenden Komponente handeln.
  • Die elektrische Verbindung zwischen dem Bonddraht 1 und der Metallisierung 51 wurde in bekannter Weise durch Wedge-Drahtbonden hergestellt. Grundsätzlich können jedoch auch andere Drahtbondtechniken eingesetzt werden. In jedem Fall wird die Geometrie des ursprünglichen Bonddrahtes 1, wie sie im vorliegenden Beispiel in den 1A bis 1C gezeigt ist, durch den Bondvorgang geändert. Wie in 7 zu erkennen ist, ist der Bonddraht 1 durch den Bondvorgang an der Bondstelle flach gequetscht. In diesem Zusammenhang wird darauf hingewiesen, dass sich im Sinne der vorliegenden Erfindung die Angaben zu den Querschnittsflächen A1, A10 und A20 auf die Stellen des Bonddrahtes 1 beziehen, die sich nicht in unmittelbarer Nähe zu einer Bondstelle befinden, d.h. auf Stellen, an denen der Bonddraht 1 noch seine ursprüngliche Form besitzt. Weiterhin ist die Verlaufsrichtung des Bonddrahts 1 aufgrund des Bondvorgangs keine Gerade mehr, vielmehr besitzt der Bonddraht 1 nun die Form einer Schleife ('Loop'), die dadurch gebildet wird, dass der Bonddraht 1 an die Metallisierung 51 nur an der oder ggf. den Bondstellen kontaktiert, ansonsten jedoch von der Metallisierung 51 beabstandet ist.
  • Bei dem gezeigten Beispiel wurde auch das Filament 10 durch den Bondvorgang stark umgeformt. Vor allem bei der Verwendung von sehr harten Materialien wie z.B. von Wolfram oder einer Wolframlegierung für ein Filament 10 (oder, bei anderen Ausführungen, für mehrere Filamente 11, 12, 13, 14, 15, 16, 17) kann die Verformung des oder der Filamente auch wesentlich weniger stark ausgeprägt sein.
  • Eine Anordnung gemäß 7 lässt sich jedoch nicht nur unter Verwendung eines gemäß den 1A bis 1C ausgebildeten Bonddrahtes 1 realisieren, sondern unter Verwendung eines jeden Bonddrahtes, der einen wie vorangehend erläuterten Aufbau besitzt.
  • Wie bereits erläutert wurde, weist bei einem Bonddraht 1 gemäß der vorliegenden Erfindung ein jedes der aus dem ersten Material bestehenden Filamente 10, 11, 12, 13, 14, 15, 16, 17 des Bonddrahtes 1 bei einem Druck von 1013,25 hPa eine Schmelztemperatur auf, die um wenigstens 450°C höher ist als die Schmelztemperatur, die die Matrix 20 bei einem Druck von 1013,25 hPa aufweist.
  • Darüber hinaus können die beteiligten Materialien optional auch so gewählt werden, dass eines, mehrere oder sämtliche der aus dem ersten Material bestehenden Filamente 10, 11, 12, 13, 14, 15, 16, 17 des Bonddrahtes 1 bei einem Druck von 1013,25 hPa eine Schmelztemperatur aufweisen, die um wenigstens 850°C höher ist als die Schmelztemperatur, die die Matrix 20 bei einem Druck von 1013,25 hPa aufweist.
  • Darüber hinaus können die beteiligten Materialien auch so gewählt werden, dass ein jedes der aus dem ersten Material bestehenden Filamente 10, 11, 12, 13, 14, 15, 16, 17 des Bonddrahtes 1 bei einem Druck von 1013,25 hPa eine Schmelztemperatur aufweist, die wenigstens 1200°C beträgt. Eine derart hohe Schmelztemperatur bringt den Vorteil mit sich, dass ein Aufschmelzen des Filaments oder der Filamente 10, 11, 12, 13, 14, 15, 16, 17 erst bei einer hohen Verlustleistung auftritt. Die Verlustleistung kann dabei so hoch sein, dass sowohl das erste Material als auch das zweite Material verdampfen. Der wichtige Unterschied besteht darin, dass das zweite Material früher zu verdampfen beginnt als das erste Material.
  • Unabhängig davon kann das zweite Material der Matrix 20 so gewählt werden, dass diese eine Schmelztemperatur von wenigstens 550°C aufweist. Dadurch kann verhindert werden, dass das die Matrix 20 bereits durch die Betriebstemperaturen üblicher Halbleiterbaugruppen aufgeschmolzen wird.
  • Weiterhin können bei einem Bonddraht 1 der vorliegenden Erfindung eines, mehr als eines oder sämtliche der aus dem ersten Material bestehenden Filamente 10, 11, 12, 13, 14, 15, 16, 17 des Bonddrahtes 1 bei einer Temperatur von 20°C und einem Druck von 1013,25 hPa einen spezifischen elektrischen Widerstand von höchstens 10–7 Ω·m (1E–7 Ω·m) aufweisen. Dies hat den Vorteil, dass die beim Betrieb in dem Bonddraht 1 auftretende Verlustleistung und damit die Erwärmung des Bonddrahtes 1 gering gehalten wird.
  • Unabhängig davon können bei einem Bonddraht 1 gemäß der vorliegenden Erfindung eines, mehr als eines oder sämtliche der aus dem ersten Material bestehenden Filamente 10, 11, 12, 13, 14, 15, 16, 17 des Bonddrahtes 1 bei einer Temperatur von 20°C und einem Druck von 1013,25 hPa einen spezifischen elektrischen Widerstand von mehr als 4,5·10–8 Ω·m (4,5E–8 Ω·m) aufweisen.
  • Weiterhin kann die Matrix 20 optional bei einer Temperatur von 20°C und einem Druck von 1013,25 hPa einen spezifischen elektrischen Widerstand von weniger als 10–7 Ω·m (1E–7 Ω·m) aufweisen, wodurch ein niedriger elektrischer Widerstand des Bonddrahtes 1 erreicht werden kann.
  • Bei einem Bonddraht 1 gemäß der vorliegenden Erfindung kann es außerdem vorgesehen sein, dass dessen Oberfläche (abgesehen von den Enden des Bonddrahtes 1) durch die Matrix 20 gebildet wird, d.h. unter anderem, dass sämtliche der aus dem ersten Material bestehenden Filamente 10, 11, 12, 13, 14, 15, 16, 17 des Bonddrahtes 1 von der Oberfläche des Bonddrahtes 1 beabstandet sind. Anders ausgedrückt ist ein jedes der dem ersten Material bestehenden Filamente 10, 11, 12, 13, 14, 15, 16, 17 des Bonddrahtes 1, abgesehen von dessen Enden, vollständig in die Matrix 20 eingebettet.
  • Demgemäß können ein jedes, mehr als eines oder sämtliche der aus dem ersten Material bestehenden Filamente 10, 11, 12, 13, 14, 15, 16, 17 des Bonddrahtes 1 um wenigstens 10% des Durchmessers D1 des Bonddrahtes 1 von der Oberfläche des Bonddrahtes 1 beabstandet sein. Im Fall eines Bonddrahtes 1, der keinen kreisförmigen Querschnitt aufweist, wird als dessen Durchmesser D1 sein maximaler Durchmesser angesehen, den er senkrecht zu seiner Verlaufsrichtung aufweist. In den 1C, 2, 4, 5 und 6 ist dieser Abstand mit d0 bezeichnet.
  • Mit einem Bonddraht 1 gemäß der vorliegenden Erfindung lässt sich vor allem im Bereich der Leistungselektronik eine Verbesserung erzielen, bei dem der Bonddraht 1 mit hohen Strömen belastet wird. Daher kann es vorgesehen sein, dass der Bonddraht 1 senkrecht zu seiner Verlaufsrichtung eine Querschnittsfläche A1 von wenigstens 70000 µm2 aufweist, was im Fall eines Bonddrahtes 1 mit kreisförmigem Querschnitt in etwa einem Durchmesser von wenigstens 300 µm entspricht.
  • Unabhängig davon kann bei einem Bonddraht 1 gemäß der vorliegenden Erfindung in einer sich quer zur Verlaufsrichtung des Bonddrahtes 1 erstreckenden Schnittebene das Verhältnis A10÷A1 zwischen einer ersten Querschnittsfläche A10, die durch die Querschnittsfläche sämtlicher aus dem ersten Material bestehenden Filamente 10, 11, 12, 13, 14, 15, 16, 17 des Bonddrahtes 1 gegeben ist, und der Querschnittsfläche A1 (= A10 + A20) des Bonddrahtes 1 größer sein als 0,04.
  • Unabhängig davon kann das genannte Verhältnis A10÷A1 auch so gewählt werden, dass es kleiner ist als 0,75. Damit wird sichergestellt, dass eine ausreichende Menge des zweiten Materials der Matrix 20 vorhanden ist.
  • Generell kann bei einem Bonddraht gemäß der vorliegenden Erfindung eines, mehrere oder ein jedes der aus dem ersten Material bestehenden Filamente 10, 11, 12, 13, 14, 15, 16, 17 des Bonddrahtes 1 jeweils vollständig oder zu wenigstens 95 Atom% aus Metall bestehen, beispielsweise aus Silber, Gold, Kupfer, Beryllium, Nickel, Eisen, Palladium, Platin, Chrom, Rhodium, Iridium, Ruthenium, Molybdän, Tantal, Wolfram, oder aus einer Legierung, die zu wenigstens 90 Atom% aus genau einem oder mehreren der genannten Metalle besteht.
  • Alternativ oder zusätzlich kann das zweite Material der Matrix 20 vollständig oder zu wenigstens 95 Atom% aus Metall bestehen, beispielsweise aus Zink, Magnesium, Aluminium, Silber, Gold, Kupfer, Beryllium, Nickel, Eisen, Palladium, Platin, Chrom, Rhodium, Iridium, Ruthenium, Molybdän, Tantal, oder aus einer Legierung, die zu wenigstens 90 Atom% aus einem dieser Metalle besteht.
  • 8 zeigt eine (nicht abschließende) Tabelle mit Metallen, die in Reinform oder in einer Legierung zur Herstellung der Filamente ('Filamentmetall') und der Matrix ('Matrixmetall') verwendet werden können, sowie die zugehörigen Schmelztemperaturen ST in Grad Celsius bezogen auf einen Druck von 1013,25 hPa. Die Tabelleneinträge geben für jede Kombination eines Filamentmetalls mit einem Matrixmetall den Unterschied zwischen der Schmelztemperatur STFilamentmetall des Filamentmetalls und der Schmelztemperatur STMatrixmetall des Matrixmetalls in Grad Celsius an, soweit dieser Unterschied wenigstens 450°C beträgt. Die in der Tabelle eingetragenen Schmelztemperaturen sind D'Ans, Lax: "Taschenbuch für Chemiker und Physiker", dritte Auflage, Band I, "Makroskopische physikalisch-chemische Eigenschaften", Springer-Verlag, Berlin, Heidelberg, New York, 1967, entnommen, siehe dort in der Tabelle 2141 "Physikalische und chemische Eigenschaften der Elemente, die im Normalzustand kondensiert sind" den Eintrag Nr. 23.
  • ZITATE ENTHALTEN IN DER BESCHREIBUNG
  • Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.
  • Zitierte Nicht-Patentliteratur
    • D'Ans, Lax: "Taschenbuch für Chemiker und Physiker", dritte Auflage, Band I, "Makroskopische physikalisch-chemische Eigenschaften", Springer-Verlag, Berlin, Heidelberg, New York, 1967, entnommen, siehe dort in der Tabelle 2141 "Physikalische und chemische Eigenschaften der Elemente, die im Normalzustand kondensiert sind" den Eintrag Nr. 23 [0048]

Claims (17)

  1. Bonddraht umfassend: ein Filament (10) oder mehrere Filamente (10–17); eine Matrix (20), in die das Filament (10) eingebettet ist oder in die die Filamente (10–17) eingebettet sind; wobei ein jedes der Filamente bei einem Druck von 1013,25 hPa eine Schmelztemperatur aufweist, die um wenigstens 450°C höher ist als die Schmelztemperatur, die die Matrix (20) bei einem Druck von 1013,25 hPa aufweist.
  2. Bonddraht nach Anspruch 1, bei dem eines, mehr als eines oder sämtliche der Filamente (10) des Bonddrahtes (1) eine Schmelztemperatur von wenigstens 1200°C aufweist.
  3. Bonddraht nach Anspruch 1 oder 2, bei dem die Matrix (20) eine Schmelztemperatur von wenigstens 550°C aufweist.
  4. Bonddraht nach einem der vorangehenden Ansprüche, bei dem eines, mehr als eines oder sämtliche Filamente (10–17) des Bonddrahtes (1) bei einer Temperatur von 20°C und einem Druck von 1013,25 hPa einen spezifischen elektrischen Widerstand von höchstens 10–7 Ω·m (1E–7 Ω·m) aufweisen.
  5. Bonddraht nach einem der vorangehenden Ansprüche, bei dem eines, mehr als eines oder sämtliche Filamente (10–17) des Bonddrahtes (1) bei einer Temperatur von 20°C und einem Druck von 1013,25 hPa einen spezifischen elektrischen Widerstand von mehr als 4,5·10–8 Ω·m (4,5E–8 Ω·m) aufweisen.
  6. Bonddraht nach einem der vorangehenden Ansprüche, bei dem eines, mehr als eines oder ein jedes der Filamente (10) des Bonddrahtes (1) bei einem Druck von 1013,25 hPa eine Schmelztemperatur aufweist, die um wenigstens 850°C höher ist als die Schmelztemperatur, die die Matrix (20) bei einem Druck von 1013,25 hPa aufweist.
  7. Bonddraht nach einem der vorangehenden Ansprüche, bei dem die Matrix (20) bei einer Temperatur von 20°C und einem Druck von 1013,25 hPa einen spezifischen elektrischen Widerstand von weniger als 10–7 (1E–7) Ω·m aufweist.
  8. Bonddraht nach einem der vorangehenden Ansprüche, dessen Oberfläche durch die Matrix (20) gebildet wird.
  9. Bonddraht nach einem der vorangehenden Ansprüche, der quer zu seiner Verlaufsrichtung (z) eine Querschnittsfläche (A1) von wenigstens 70000 µm2 aufweist.
  10. Bonddraht nach einem der vorangehenden Ansprüche, bei dem ein Filament, mehr als ein oder sämtliche Filamente (10) des Bonddrahtes (1) um wenigstens 10% des Durchmessers (D1) des Bonddrahtes (1) von der Oberfläche des Bonddrahtes (1) beabstandet ist bzw. sind.
  11. Bonddraht nach einem der vorangehenden Ansprüche, bei dem in einer Schnittebene quer zur Verlaufsrichtung (z) des Bonddrahtes (1) das Verhältnis (A10÷A1) zwischen einer ersten Querschnittsfläche (A10), die durch die Querschnittsfläche des einen Filaments (10) oder durch die Summe der Querschnittsflächen (A11–A17) sämtlicher Filamente (10–17) des Bonddrahtes (1) gegeben ist, und der Querschnittsfläche des Bonddrahtes (A1 = A10 + A20) größer ist als 0,04.
  12. Bonddraht nach einem der vorangehenden Ansprüche, bei dem in einer Schnittebene quer zur Verlaufsrichtung (z) des Bonddrahtes (1) das Verhältnis (A10÷A1) zwischen einer ersten Querschnittsfläche (A10), die durch die Querschnittsfläche des einen Filaments (10) oder durch die Summe der Querschnittsflächen (A11–A17) sämtlicher Filamente (10–17) des Bonddrahtes (1) gegeben ist, und der Querschnittsfläche des Bonddrahtes (A1 = A10 + A20) kleiner ist als 0,75.
  13. Bonddraht nach einem der vorangehenden Ansprüche, bei dem das eine Filament (10), mehr als eines oder sämtliche der Filamente (10–17) des Bonddrahtes (1) jeweils vollständig oder zu wenigstens 95 Atom% aus Metall besteht; und/oder die Matrix (20) vollständig oder zu wenigstens 95 Atom% aus Metall besteht.
  14. Bonddraht nach einem der vorangehenden Ansprüche, bei dem das eine Filament (10), mehr als eines oder sämtliche der Filamente (10–17) des Bonddrahtes (1) jeweils aus einem der folgenden Materialien bestehen, oder aus einer Legierung, die zu wenigstens 90 Atom% aus einem der folgenden Materialien besteht: Silber, Gold, Kupfer, Beryllium, Nickel, Eisen, Palladium, Platin, Chrom, Rhodium, Iridium, Ruthenium, Molybdän, Tantal, Wolfram.
  15. Bonddraht nach einem der vorangehenden Ansprüche, bei dem die Matrix (20) aus einem der folgenden Materialien besteht, oder aus einer Legierung, die zu wenigstens 90 Atom% aus einem der folgenden Materialien besteht: Zink, Magnesium, Aluminium, Silber, Gold, Kupfer, Beryllium, Nickel, Eisen, Palladium, Platin, Chrom, Rhodium, Iridium, Ruthenium, Molybdän, Tantal.
  16. Verfahren zur Herstellung einer elektrischen Baugruppe umfassend die Schritte: Bereitstellen eines eine Metallisierung (51) aufweisenden Trägers (5); Bereitstellen eines gemäß einem der vorangehenden Ansprüche ausgebildeten Bonddrahtes (1); Herstellen einer Drahtbondverbindung zwischen der Metallisierung (51) und dem Bonddraht (1), so dass der Bonddraht die Metallisierung (51) unmittelbar kontaktiert.
  17. Verfahren nach Anspruch 16, bei dem das Herstellen der Drahtbondverbindung durch Wedgebonden erfolgt.
DE102013200308.0A 2013-01-11 2013-01-11 Bonddraht und Verfahren zur Herstellung einer Bondverbindung Pending DE102013200308A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE102013200308.0A DE102013200308A1 (de) 2013-01-11 2013-01-11 Bonddraht und Verfahren zur Herstellung einer Bondverbindung
CN201410012444.7A CN103928418B (zh) 2013-01-11 2014-01-10 键合引线和用于产生键合连接的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102013200308.0A DE102013200308A1 (de) 2013-01-11 2013-01-11 Bonddraht und Verfahren zur Herstellung einer Bondverbindung

Publications (1)

Publication Number Publication Date
DE102013200308A1 true DE102013200308A1 (de) 2014-07-17

Family

ID=51015012

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102013200308.0A Pending DE102013200308A1 (de) 2013-01-11 2013-01-11 Bonddraht und Verfahren zur Herstellung einer Bondverbindung

Country Status (2)

Country Link
CN (1) CN103928418B (de)
DE (1) DE102013200308A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104778992B (zh) * 2014-01-09 2016-10-19 吕传盛 耐磨抗蚀无镀层铜线及其制造方法
DE102022208367A1 (de) 2022-08-11 2024-02-22 Zf Friedrichshafen Ag Leistungsmodul

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109686714B (zh) * 2018-12-14 2020-05-15 汕头市骏码凯撒有限公司 一种具有复合钯钨镀层的银合金线及其制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1279491A1 (de) * 2001-07-23 2003-01-29 Tao-Kuang Chang Golddraht für Halbleiterpackung und Hochfrequenzsignalübertragung und Verfahren zur Herstellung
EP1447846A2 (de) * 1994-11-15 2004-08-18 Formfactor, Inc. Sockel und Elektronikbauteil-Verbindungsmethode
DE102006023167B3 (de) * 2006-05-17 2007-12-13 Infineon Technologies Ag Bonddraht, Herstellungsverfahren für einen Bonddraht und Wedge-Wedge-Drahtbondverfahren
DE102006041355A1 (de) * 2006-09-01 2008-03-13 W.C. Heraeus Gmbh Aluminium-Bonddrähte mit eingebetteten Kupferfasern
DE102010031993A1 (de) * 2010-07-22 2012-01-26 W.C. Heraeus Gmbh Kern-Mantel-Bändchendraht

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3023528C2 (de) * 1980-06-24 1984-11-29 W.C. Heraeus Gmbh, 6450 Hanau Aluminium enthaltender Feinstdraht
JPS6297360A (ja) * 1985-10-24 1987-05-06 Mitsubishi Metal Corp 半導体装置のボンデイングワイヤ用表面被覆高純度銅極細線
DE4232745C2 (de) * 1992-09-30 2002-07-18 Univ Dresden Tech Bonddraht zum Ultraschallbonden
DE102006025870A1 (de) * 2006-06-02 2007-12-06 Robert Bosch Gmbh Mehrschichtiges Bond-Bändchen

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1447846A2 (de) * 1994-11-15 2004-08-18 Formfactor, Inc. Sockel und Elektronikbauteil-Verbindungsmethode
EP1279491A1 (de) * 2001-07-23 2003-01-29 Tao-Kuang Chang Golddraht für Halbleiterpackung und Hochfrequenzsignalübertragung und Verfahren zur Herstellung
DE102006023167B3 (de) * 2006-05-17 2007-12-13 Infineon Technologies Ag Bonddraht, Herstellungsverfahren für einen Bonddraht und Wedge-Wedge-Drahtbondverfahren
DE102006041355A1 (de) * 2006-09-01 2008-03-13 W.C. Heraeus Gmbh Aluminium-Bonddrähte mit eingebetteten Kupferfasern
DE102010031993A1 (de) * 2010-07-22 2012-01-26 W.C. Heraeus Gmbh Kern-Mantel-Bändchendraht

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
D'Ans, Lax: "Taschenbuch für Chemiker und Physiker", dritte Auflage, Band I, "Makroskopische physikalisch-chemische Eigenschaften", Springer-Verlag, Berlin, Heidelberg, New York, 1967, entnommen, siehe dort in der Tabelle 2141 "Physikalische und chemische Eigenschaften der Elemente, die im Normalzustand kondensiert sind" den Eintrag Nr. 23

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104778992B (zh) * 2014-01-09 2016-10-19 吕传盛 耐磨抗蚀无镀层铜线及其制造方法
DE102022208367A1 (de) 2022-08-11 2024-02-22 Zf Friedrichshafen Ag Leistungsmodul

Also Published As

Publication number Publication date
CN103928418A (zh) 2014-07-16
CN103928418B (zh) 2017-06-13

Similar Documents

Publication Publication Date Title
EP3262667B1 (de) Elektrischer anschlusskontakt fuer ein keramisches bauelement, keramisches bauelement, bauelementanordnung und verfahren zur deren herstellung
DE10125323A1 (de) Elektronische Komponente, Verfahren zur Herstellung einer elektronischen Komponente sowie Leiterplatte
DE112017003925B4 (de) Leistungs-Halbleiterelement
EP1941520B1 (de) Widerstand, insbesondere smd-widerstand, und zugehöriges herstellungsverfahren
EP3425665B1 (de) Verfahren zur herstellung eines bonddrahtes
DE2041497B2 (de) Verfahren zum Herstellen eines Halbleiterbauelementes
DE102013211405A1 (de) Verfahren zur herstellung eines halbleitermoduls
EP2756509B1 (de) Vielschichtbauelement und verfahren zu dessen herstellung
WO2012034752A1 (de) Trägersubstrat für ein optoelektronisches bauelement, verfahren zu dessen herstellung und optoelektronisches bauelement
DE102014117410B4 (de) Elektrisches Kontaktelement, Einpressstift, Buchse und Leadframe
DE112010005383B4 (de) Halbleitervorrichtung
DE102013200308A1 (de) Bonddraht und Verfahren zur Herstellung einer Bondverbindung
DE102016014130B3 (de) Strommessvorrichtung
DE102020107515A1 (de) Multimetall Klettwelding
DE102015013511B3 (de) Laserstrahlungsquelle und Verfahren zur Herstellung einer Laserstrahlungsquelle und Verwendung eines Lötprozesses
DE1279201B (de) Halbleiteranordnung
WO2021180421A1 (de) Draht und band mit bornitrid-nanoröhren für elektrische kontaktierungen
WO2009052814A2 (de) Kühlvorrichtung für halbleiterbauelemente, halbleiter-kühlanordnung und verfahren zu deren herstellung
DE1789062B2 (de) Verfahren zum Herstellen von Metallkontaktschichten für Halbleiteranordnungen
WO2008080467A1 (de) Anschlussdraht, verfahren zur herstellung eines solchen und baugruppe
EP1692476B1 (de) Bauelement und verfahren zu dessen herstellung
WO2013171084A2 (de) Elektrische kontaktierung für halbleiter
WO2012006991A2 (de) Halbleiterbauelement und verfahren zur herstellung desselben
DE2210885B2 (de) Hochstrom-Anschluß
DE102015212169A1 (de) Schaltungsträger für eine elektronische Schaltung und Verfahren zum Herstellen eines derartigen Schaltungsträgers

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R016 Response to examination communication