DE3023528C2 - Aluminium enthaltender Feinstdraht - Google Patents

Aluminium enthaltender Feinstdraht

Info

Publication number
DE3023528C2
DE3023528C2 DE3023528A DE3023528A DE3023528C2 DE 3023528 C2 DE3023528 C2 DE 3023528C2 DE 3023528 A DE3023528 A DE 3023528A DE 3023528 A DE3023528 A DE 3023528A DE 3023528 C2 DE3023528 C2 DE 3023528C2
Authority
DE
Germany
Prior art keywords
aluminum
weight
copper
fine wire
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3023528A
Other languages
English (en)
Other versions
DE3023528A1 (de
Inventor
Fritz Dipl.-Ing. Dr. 6458 Rodenbach Aldinger
Albrecht Dipl.-Phys. Dr. 6454 Bruchköbel Bischoff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Priority to DE3023528A priority Critical patent/DE3023528C2/de
Priority to CH3686/81A priority patent/CH651957A5/de
Priority to US06/274,528 priority patent/US4355082A/en
Priority to JP9607981A priority patent/JPS5730206A/ja
Publication of DE3023528A1 publication Critical patent/DE3023528A1/de
Application granted granted Critical
Publication of DE3023528C2 publication Critical patent/DE3023528C2/de
Expired legal-status Critical Current

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    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/923—Physical dimension
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12431—Foil or filament smaller than 6 mils
    • Y10T428/12438—Composite
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y10T428/1275—Next to Group VIII or IB metal-base component

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Non-Insulated Conductors (AREA)
  • Conductive Materials (AREA)

Description

Die Erfindung betrifft einen Aluminium enthaltenden Feinstdraht mit einem Durchmesser von 0,01 bis 0,06 mm zum Kontaktieren von Halbleiter-Bauelementen.
Zur Herstellung von Außenanschlüssen werden Halbleiter-Bauelemente mit Feinstdrähten aus Gold, Aluminium, Aluminium-Legierungen, wie z. B. AISiI, AlCu4 oder AIMgI, oder aus Kupfer-Legierungen, wie z. B. Kupfer-Zinn, kontaktiert; vgl. die DE-OS 29 29 623 und die DE-OS 30 11 661.
Das Verbinden der Halbleiter mit dem Feinstdraht erfolgt durch Ultraschall- oder Thermo-Kompressions-Schweißen oder durch eine Kombination beider Schweißverfahren, das sogenannte Thermosonic-Schweißen.
Die bekannten Aluminium- und Aluminium-Legierungs-Feinstdrähte sind aufgrund ihres Ermüdungsverhaltens, das zu Rißbildungen in dem Bereich zwischen der eigentlichen Verbindungsstelle (Bondstelle) und dem Draht führt, für das Ultraschall-Schweißen durch Keil-Schweißen weniger gut geeignet.
Auch für das Thermo-Kompressions- bzw. Thermosonic-Schweißen nach dem Verfahren der Nagelkopf-Kontaktierung können die bekannten Aluminium- und Aluminium-Legierungs-Feinstdrähte nur bedingt eingesetzt werden, da sie - anders als die Gold-Feinstdrähte m> — in dem der Verbindungsstelle benachbarten Bereich bei der Bildung von Schleifen zum Abknicken neigen.
Es ist die Aufgabe der Erfindung, edclmetallfreie, zum Kontaktieren von Halbleiter-Bauelementen geeignete Feinstdrähte zu schaffen, die eine hohe Ermüdungsfe- b5 stigkeit besitzen und auch ein für das Schweißen nach dem Verfahren der Nagelkopf-Kontaktierung günstiges Verhalten aufweisen.
Die Aufgabe wird erfindungsgemtß durch einen Feinstdraht aus einem Kern aus Kupfer oder einer Kupfer-Legierung mit mindestens 50 Gewichts-% Kupfer und einem Mantel aus Aluminium oder einer Aluminium-Legierung mit mindestens 95 Gewichts-% Aluminium gelöst
Besondere Ausführungsarten des erfindungsgemäßen Feinstdrahtes ergeben sich axis den Unteransprüchen 2 bis 5.
Die Kupfer-Legierungen des Kerns können z. B. Messing, Bronze oder Neusilber sein, soweit diese mindestens 60 Gewichts-% Kupfer enthalten. Besonders bewährt hat sich die Legierung aus 94 Gewichts-% Kupfer und 6 Gewichts-% Zinn.
Für den Mantel besonders geeignete Aluminium-Legierungen sind die aus
99 Gewichts-% Aluminium und
1 Gewichts-% Silizium,
96 Gewichts-% Aluminium und
4 Gewichts-% Kupfer und
99 Gewichts-% Aluminium und
1 Qcwichts-% Magnesium.
Bevorzugte Feinstdrähte sind solche aus
Kupfer-Kern und Aluminium-Mantel,
Kupfer-Kern und Mantel aus der Legierung aus
99 Gewichts-% Aluminium und
1 Gewichts-% Silizium,
Kupfer-Kern und Mantel aus der Legierung aus
96 Gewichts-% Aluminium und
4 Gewichts-% Kupfer,
Kupfer-Kern und Mantel aus der Legierung aus
99 Gewichts-% Aluminium und
1 Gewichts-% Magnesium,
Kern aus der Legierung aus
94 Gewichts-% Kupfer und
6 Gewichts-% Zinn und Aluminium-Mantel und
Kern aus der Legierung aus
94 Gewichts-% Kupfer und
6 Gewichts-% Zinn und
Mantel aus der Legierung aus
99 Gewichts-% Aluminium und
1 Gewichts-% Silizium.
Die erfindungsgemäßen Feinstdrähte weisen, wie die Wöhler-Kurven in der Abbildung zeigen, eine hohe Ermüdungsfestigkeit auf.
Als Maß für die Ermüdungsfestigkeit ist hier die Bruchlaslspielzahl eines Feinstdrahtes aus Cu-Kern und AISil-Mantel (Durchmeser jeweils 50μπι) und — zum Vergleich dazu - die von bekannten Feinstdrähten aus AlSiI bzw. AICu4 (Durchmesser 50 μιη) in Abhängigkeit vom Biegewinkel dargestellt. Der Cu-AlSil-Feinstdraht besitzt gegenüber dem aus AlCu4 eine um das Zehnfache und gegenüber dem aus AISiI um das Hundertfache höhere Bruchlastspielzahl.
Durch die erhöhte Ermüdungsfestigkeil der erfindungsgemäßen Feinstdrähte ist die Gefahr der Rißbildung in dem Bereich zwischen Verbindungsstelle (Bondstelle) und dem Draht erheblich verringert.
Die Feinstdrähte besitzen vorzugsweise einen Durch-
messer von etwa 25 μιη, der Kern vorzugsweise einen solchen von etwa 10 bis 15 μητ.
Milden Feinstdrähten können die Halbleiter-Bauelemente sowohl durch Ultraschall-Schweißen nach dem Keil-SchweiB-Verfahren als auch nach dem Verfahren der Nagelkopf-Kontaktierung kontaktic;i werden.
Ein besonderes Anwendungsgebiet der Feinsldrähte ist das Kontaktieren von mit Aluminium-Schichten versehenen Silizium-Halbleitern nach dem Verfahren at:r Nagelkopf-Kontaktierung, da sich mit Aluminium metallisiertes Silizium mit den bekannten Aluminium- und Aluminium-Legierungs-Feinstdrähten nur bedingt nach diesem Verfahren in Schweißautomaten kontaktieren läßt und Gold-Feinstdrähte zwar ein automalisches Kontaktieren zulassen, aber beim Schweißen durch Thermo-Kompression eine spröde intermetallische Gold-Aluminium-Verbindung (AuAb) bilden.
Hierzu 1 Blatt Zeichnungen
20
25
JO
35
50
bO

Claims (6)

Patentansprüche:
1. Aluminium enthaltender Feinstdraht mit einem Durchmesser von 0,01 bis 0,06 mm zum Kontaktieren von Halbleiter-Bauelementen, gekennzeichnet durch einen Kern aus Kupfer oder einer Kupfer-Legierung mit mindestens 60 Gewichts-% Kupfer und einen Mantel aus Aluminium oder einer Aluminium-Legierung mit mindestens 95 Gewichts-% Aluminium.
2. Feinstdraht nach Anspruch 1, dadurch gekennzeichnet, daß die Kupfer-Legierung des Kerns aus 94 Gewichts-% Kupfer und 6 Gewichts-% Zinn besteht ,5
3. Feinstdraht nach einem der Ansprüche 1 oder 2, dadurch gekennzeichnet, daß die Aluminium-Legierung des Mantels aus 99 Gewichts-% Aluminium und 1 Gewichts-% Silizium besteht.
4. Feinstdraht nach Anspruch 1, dadurch gekennzeichnet, daß die Aluminium-Legierung des Mantels aus 96 Gewichts-% Aluminium und 4 Gewichts-% Kupfer besteht
5. Feinstdraht nach Anspruch 1, dadurch gekennzeichnet, daß die Aluminium-Legierung des Mantels aus 99 Gewichts-% Aluminium und 1 Gewichts-% Magnesium besteht
6. Verwendung des Feinstdrahtes nach einem der Ansprüche 1 bis 5, zum Kontaktieren von mit Aluminium-Schichten versehenen Silizium-Halbleitern.
DE3023528A 1980-06-24 1980-06-24 Aluminium enthaltender Feinstdraht Expired DE3023528C2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE3023528A DE3023528C2 (de) 1980-06-24 1980-06-24 Aluminium enthaltender Feinstdraht
CH3686/81A CH651957A5 (de) 1980-06-24 1981-06-04 Feinstdraht zum kontaktieren von halbleiter-bauelementen.
US06/274,528 US4355082A (en) 1980-06-24 1981-06-17 Ultra-thin wire for semiconductor connections
JP9607981A JPS5730206A (en) 1980-06-24 1981-06-23 Contact extra fine conductor for semiconductor constituent element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3023528A DE3023528C2 (de) 1980-06-24 1980-06-24 Aluminium enthaltender Feinstdraht

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DE3023528A1 DE3023528A1 (de) 1982-01-21
DE3023528C2 true DE3023528C2 (de) 1984-11-29

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JP (1) JPS5730206A (de)
CH (1) CH651957A5 (de)
DE (1) DE3023528C2 (de)

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DE3153395C2 (en) * 1981-02-12 1987-11-19 W.C. Heraeus Gmbh, 6450 Hanau, De Use of a very fine wire made of a copper/tin alloy
DE102006041355A1 (de) * 2006-09-01 2008-03-13 W.C. Heraeus Gmbh Aluminium-Bonddrähte mit eingebetteten Kupferfasern
DE102016107287A1 (de) 2016-04-20 2017-11-09 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung und Verfahren zum Betrieb einer Leistungshalbleitereinrichtung

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DE2929623C2 (de) * 1979-07-21 1981-11-26 W.C. Heraeus Gmbh, 6450 Hanau Feinstdraht aus einer Aluminiumlegierung
DE3104960A1 (de) 1981-02-12 1982-08-26 W.C. Heraeus Gmbh, 6450 Hanau "feinstdraht"
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JPS59208770A (ja) * 1983-05-12 1984-11-27 Hitachi Ltd ボ−ルボンデイング用アルミ合金極細線
US4534105A (en) * 1983-08-10 1985-08-13 Rca Corporation Method for grounding a pellet support pad in an integrated circuit device
FR2555813B1 (fr) * 1983-09-28 1986-06-20 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
IT1183375B (it) * 1984-02-24 1987-10-22 Hitachi Ltd Dispositivo a semiconduttori comprendente una pallina, fili conduttori e porzioni conduttrici esterneche sono collegate alla pallina mediante tali fili conduttori
JPS61191914A (ja) * 1985-02-20 1986-08-26 Omron Tateisi Electronics Co 傾斜センサ
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
JPS62265729A (ja) * 1986-05-14 1987-11-18 Hitachi Ltd 半導体装置
JPS6383256A (ja) * 1986-09-26 1988-04-13 Futaba Corp アルミニウム蒸着膜付銅部材
DE3704200A1 (de) * 1987-02-11 1988-08-25 Bbc Brown Boveri & Cie Verfahren zur herstellung einer verbindung zwischen einem bonddraht und einer kontaktflaeche bei hybriden dickschicht-schaltkreisen
US4922366A (en) * 1988-05-12 1990-05-01 Transnational Energy Systems, Inc., Dba Tesco Meltable conductor to be used in series with voltage suppressors
US4987779A (en) * 1989-02-28 1991-01-29 United Technologies Corporation Pulse-driven accelerometer arrangement
US5139883A (en) * 1989-05-09 1992-08-18 Grigory Raykhtsaum Intermetallic time-temperature integration fuse
DE4232745C2 (de) * 1992-09-30 2002-07-18 Univ Dresden Tech Bonddraht zum Ultraschallbonden
US6840777B2 (en) * 2000-11-30 2005-01-11 Intel Corporation Solderless electronics packaging
DE102006023167B3 (de) * 2006-05-17 2007-12-13 Infineon Technologies Ag Bonddraht, Herstellungsverfahren für einen Bonddraht und Wedge-Wedge-Drahtbondverfahren
DE102013200308A1 (de) * 2013-01-11 2014-07-17 Infineon Technologies Ag Bonddraht und Verfahren zur Herstellung einer Bondverbindung
EP2808873A1 (de) * 2013-05-28 2014-12-03 Nexans Elektrisch leitfähiger Draht und Verfahren zu seiner Herstellung
IT201700067156A1 (it) * 2017-06-16 2018-12-16 Antonio Sambusseti Rivestimento conduttivo
DE102018206482B4 (de) 2018-04-26 2024-01-25 Infineon Technologies Ag Halbleiterbauelement mit einem Verbundwerkstoffclip aus Verbundmaterial

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US3967013A (en) * 1973-10-23 1976-06-29 Eaton Corporation Method of making a composite article for rapid heating
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DE2929623C2 (de) * 1979-07-21 1981-11-26 W.C. Heraeus Gmbh, 6450 Hanau Feinstdraht aus einer Aluminiumlegierung
DE3011661C2 (de) * 1980-03-26 1982-08-26 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit Kontaktierungsdrähten

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3153395C2 (en) * 1981-02-12 1987-11-19 W.C. Heraeus Gmbh, 6450 Hanau, De Use of a very fine wire made of a copper/tin alloy
DE102006041355A1 (de) * 2006-09-01 2008-03-13 W.C. Heraeus Gmbh Aluminium-Bonddrähte mit eingebetteten Kupferfasern
DE102006041355B4 (de) * 2006-09-01 2011-07-21 W.C. Heraeus GmbH, 63450 Aluminium-Bonddrähte mit eingebetteten Kupferfasern
DE102016107287A1 (de) 2016-04-20 2017-11-09 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung und Verfahren zum Betrieb einer Leistungshalbleitereinrichtung

Also Published As

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CH651957A5 (de) 1985-10-15
DE3023528A1 (de) 1982-01-21
US4355082A (en) 1982-10-19
JPS639746B2 (de) 1988-03-01
JPS5730206A (en) 1982-02-18

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