DE3011661C2 - Halbleiteranordnung mit Kontaktierungsdrähten - Google Patents

Halbleiteranordnung mit Kontaktierungsdrähten

Info

Publication number
DE3011661C2
DE3011661C2 DE3011661A DE3011661A DE3011661C2 DE 3011661 C2 DE3011661 C2 DE 3011661C2 DE 3011661 A DE3011661 A DE 3011661A DE 3011661 A DE3011661 A DE 3011661A DE 3011661 C2 DE3011661 C2 DE 3011661C2
Authority
DE
Germany
Prior art keywords
copper
semiconductor arrangement
tin
wires
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3011661A
Other languages
English (en)
Other versions
DE3011661A1 (de
Inventor
Herbert Ing.(grad.) 7141 Oberstenfeld Helber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Electronic GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE3011661A priority Critical patent/DE3011661C2/de
Publication of DE3011661A1 publication Critical patent/DE3011661A1/de
Application granted granted Critical
Publication of DE3011661C2 publication Critical patent/DE3011661C2/de
Expired legal-status Critical Current

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Description

30
Zur Verbindung der Elektroden eines Halbleiterbauelementes bzw. einer integrierten Halbleiterschaltung mit Trägerkörpern oder sonstigen Zuleitungselementen werden sehr feine Kontaktierungsdrähte aus Gold verwendet. Diese Drähte werden zumeist mit Hilfe des bekannten Thermokompressionsverfahrens mit den Anschlußstellen bzw. den Elektroden verbunden. Die Elektroden des Halbleiterbauelementes bzw. die Leitbahnen auf einem Halbleiterbauelement oder einer *<> integrierten Halbleiterschaltung besiehen dabei meist aus Aluminium. Es wurde daher auch bereits vorgeschlagen, anstelle von Golddrähten Aluminiumdrähte zu verwenden, die dann jedoch mittels der Ultraschallkontaktierung mit den anzuschließenden Elektroden, Leitbahnen oder Zuleitungselementen verbunden werden. Aus der AT-PS 2 01 117 sind Kontaktierungsdrähte u.a. aus Kupfer oder Aluminium mit einem Zinn-, Antimon-, Indium- oder Gallium-Überzug bekannt.
Der Erfindung liegt die Aufgabe zugrunde, die bisher 5" am häufigsten verwendeten Golddrähte bei der Thermokompressionskontaktierung durch ein Material zu ersetzen, das gute elektrische Eigenschaften aufweist, billig ist und mit Aluminiumleitbahnen oder anderen Kontaktsystemen gut haftende Verbindungen gewährleistet. Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß die Kontaktierungsdrähte aus einer Kupfer-Zinn-Legierung bestehen.
Die Kupfer-Zinn-Legierung kann einen dritte1 Bestandteil enthalten, der vorzugsweise aus Indiui oder aus Blei besteht. Bei der reinen" Kupfer-Zinn-Leg;< rung findet beispielsweise eine Legierung Anwendun die zu 50 Gew.-% aus Kupfer und zu 50 Gew.-% au Zinn besteht Bei einer anderen Alisführungsform win eine Legierung verwendet, die 30 Gew.-% Kupfer un 70Gew.-% Zinn enthält Der Kupferanteil win vorzugsweise im Bereich zwischen 20 und 60 Gew.-0/ liegen.
Eine Kupfer-Zinn-Blei-Legierung enthält beispiels weise 50 Gew.-% Kupfer, 40 Gew.-% Zinn un< 10 Gew.-°/o Blei. Eine Kupfer-Zinn-Indium-Legierun. enthält bei einer bevorzugten Ausführungsfornf 50Gew.-% Kupfer, 40 Gew.-% Zinn und 10 Gew.-0/ Indium.
Die Erfindung wird anhand der F i g. 1 an einen! Ausführungsbeispiel noch näher erläutert. In der Figur ist ein Teil eines Trägerstreifens dargestellt, der drei Streben 2,3 und 4 aufweist. Auf de verbreiterten Teil der Strebe 4 ist ein Halbleiterkörper beispielsweise aus Silizium aufgelötet. Bei diesenif Halbleiterkörper handelt es sich zum Beispiel um eine Transistor, der mit seiner Kollektorzone mit der Strebff 4 in elektrisch leitender Verbindung steht. Di-Basisanschlußelektrode 6 und die Emitteranschlußelek trode 7 soll nun noch elektrisch leitend an die Streben bzw. 2 angeschlossen werden. Die Elektroden 6 und bestehen hierbei aus Aluminium. Zur Herstellung defi Verbindung werden nunmehr dünne Zuleitungsdrähte Γ verwendet, die mit Hilfe des bekannten Thermokom pressionsverfahrens einerseits mit den Anschlußelek troden 6 und 7 und andererseits mit den Streben 2 und elektrisch leitend verbunden werden. Die Kontaklie| rungsdrähte 8 bestehen aus einer Kupfer-Zinn-Legi rung, einer Kupfer-Zinn-Blei-Legierung oder eine] Kupfer-Zinn-Indium-Legierung der bereits erwähnte Art. Diese Feindrähte, die beispielsweise 25 od. 63 μι dick sind, weisen einen Schmelzpunkt von 400—450°< auf, so daß sie unter Druck und dem Einsatz eine! erhöhten Temperatur von ca. 320° C gut mit Aluminium! elektroden verbunden werden können. Die Anschluß!! streben 2, 3 und 4 bestehen beispielsweise aufj Kupfer-Eisen oder Kupfer-Zinn. Auch an, diese Streben werden die Kontaktierungsdrähte 8 mit Hüff des Thermokompressionsverfahrens befestigt. Die Kor taktierungsdrähte nach der Erfindung haben de Vorteil, daß ihr Material in der elektrolytische! Spannungsreihe von Aluminium nicht zu weit entferrj| ist, so daß die erzeugten Verbindungen weni" korrosionsanfällig sind. Ferner hat sich gezeigt, daß di Zuverlässigkeit von Halbleiterbauelementen oder inte j grierten Schaltungen, die mit Hilfe der erwähnte Drähte elektrisch leitend angeschlossen sind, erhör J' werden konnte. Ein wesentlicher Vorteil ist auch in dt't Materialverbilligung zu sehen, wenn anstelle voS Golddrähten nunmehr Drähte aus einem kostengünstj geren Material eingesetzt werden. j
Hierzu 1 Blatt Zeichnungen

Claims (7)

Patentansprüche:
1. Halbleiteranordnung mit Kontaktierungsdrähten, die die Elektroden der Halbleiteranordnung mit Zuleitungselementen verbinden, dadurch gekennzeichnet, daß die Kontaktierungsdrähte (8) aus einer Kupfer-Zinn-Legierung bestehen.
2. Halbleiteranordnung nach Anspruch 1, dadurch gekennzeichnet, daß die Kontaktierungsdrähte (8) aus einer Kupfer-Zinn-Blei-Legierung bestehen. ">
3. Halbleiteranordnung nach Anspruch I1 dadurch gekennzeichnet, daß die Kontaktierungsdrähte (8) aus einer Kupfer-Zinn-Indium-Legierung bestehen.
4. Halbleiteranordnung nach Anspruch 1, dadurch gekennzeichnet, daß der Kupferanteil zwischen 20 und 60 Gew.-% liegt.
5. Halbleiteranordnung nach Anspruch 2, dadurch gekennzeichnet, daß die Legierung 50 Gew.-% Kupfer, 40Gew.-% Zinn und 10Gew.-°/o Blei enthält.
6. Halbleiteranordnung nach Anspruch 3, dadurch gekennzeichnet, daß die Legierung 5OGew.-°/o Kupfer, 40Gew.-% Zinn und 10Gew.-% Indium enthält
7. Halbleiteranordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, daß die Elektroden (6,7) aus Aluminium bestehen.
DE3011661A 1980-03-26 1980-03-26 Halbleiteranordnung mit Kontaktierungsdrähten Expired DE3011661C2 (de)

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Publication number Priority date Publication date Assignee Title
DE3023528C2 (de) * 1980-06-24 1984-11-29 W.C. Heraeus Gmbh, 6450 Hanau Aluminium enthaltender Feinstdraht
DE3104960A1 (de) * 1981-02-12 1982-08-26 W.C. Heraeus Gmbh, 6450 Hanau "feinstdraht"

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Publication number Priority date Publication date Assignee Title
AT201117B (de) * 1956-10-31 1958-12-10 Western Electric Co Verfahren zur Verbindung eines metallischen Leiters mit einem Halbleiterkörper
GB1106163A (en) * 1964-03-02 1968-03-13 Post Office Improvements in or relating to the bonding of metals to semiconductor, metallic or non-metallic surfaces

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