DE1060992B - Verfahren zur Herstellung eines elektrischen Anschlusses bei Halbleitern wie Germanium - Google Patents

Verfahren zur Herstellung eines elektrischen Anschlusses bei Halbleitern wie Germanium

Info

Publication number
DE1060992B
DE1060992B DEI8884A DEI0008884A DE1060992B DE 1060992 B DE1060992 B DE 1060992B DE I8884 A DEI8884 A DE I8884A DE I0008884 A DEI0008884 A DE I0008884A DE 1060992 B DE1060992 B DE 1060992B
Authority
DE
Germany
Prior art keywords
germanium
coil
flux
turns
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEI8884A
Other languages
English (en)
Inventor
Stanley C Shepard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB13657/51A external-priority patent/GB716250A/en
Priority claimed from GB19173/53A external-priority patent/GB753488A/en
Priority claimed from US434865A external-priority patent/US2928030A/en
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Priority claimed from GB4261/56A external-priority patent/GB797822A/en
Priority claimed from GB23454/58A external-priority patent/GB835865A/en
Publication of DE1060992B publication Critical patent/DE1060992B/de
Pending legal-status Critical Current

Links

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/26—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with means for mechanically breaking-up or deflecting the jet after discharge, e.g. with fixed deflectors; Breaking-up the discharged liquid or other fluent material by impinging jets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
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    • B65D81/00—Containers, packaging elements, or packages, for contents presenting particular transport or storage problems, or adapted to be used for non-packaging purposes after removal of contents
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Description

Die Erfindung bezieht sich auf ein Verfahren zur Herstellung eines elektrischen Anschlusses bei Halbleitern, wie Germanium, die nach Erzeugung von Schichten verschiedenen Leitungstyps einer Ätzbehandlung unterworfen werden, insbesondere zur Herstellung des Basiskontaktes bei durch Legieren hergestellten Flächentransistoren. Das erfindungsgemäße Verfahren eignet sich besonders zur Befestigung eines Anschlußdrahtes an einem Stückchen Germanium.
Gemäß der Erfindung besteht das Verfahren zur Herstellung eines solchen Anschlusses darin, daß das Halbleiterplättchen an einem Ende in eine aus zwei Windungen bestehende Feder aus einem in der Ätzlösung nicht löslichen -Material, wie Phosphorbronze oder Berylliumkupfer, eingeklemmt wird, danach die Schichten unterschiedlichen Leitungstyps im Halbleiter erzeugt werden, die Vorrichtung dann durch Eintauchen in Säure geätzt wird und darauf die Feder mit dem Halbleiterplättchen verlötet wird.
Im Zusammenhang mit den Zeichnungen soll ein Ausführungsbeispiel des Erfindungsgedankens beschrieben werden. In
Fig. 1 ist in starker Vergrößerung ein Halbleitergerät dargestellt, für das die Erfindung speziell verwendet werden kann;
Fig. 2 zeigt eine Seitenansicht des Elementes von Fig. 1 mit in bekannter Weise angebrachten Zuführungen;
Fig, 3 ^und 4 zeigen einen Anschluß draht, der- zur Verwendung nach dem erfindungsgemäßen Verfahren geformt ist;
Fig. 5 und 6 zeigen die Befestigung des Anschluß drahtes nach; Fig. 4 an dem Kristallelement, und
Fig. 7 zeigt eine fertige Kristallode, die in einem' hermetisch abgeschlossenen Gehäuse angeordnet ist.
In den Fig. 1 und 2 besteht das Kristailplattchen -I. aus einem Einkristall von Germanium,' dä?s" iiiien^ Widerstand von 2 Ohm · cm aufweist. Das Plättchen ist beispielsweise 0,15 mm dick, 1,6 mm breit und 3,2 mm lang. Auf jeder Seite des Plättchens, einander gegenüberliegend, sind eine kleinere und eine größere Perle von Indium in die Oberfläche einlegiert und mit Zuführungsdrähten versehen. In Fig. 1 bildet die Perle 2 die Emitterelektrode und trägt den Zuleitungsdraht 3. Auf der anderen Seite des Germaniumplättchens bildet eine größere Perle 4 die Kollektorelektrode, welche mit dem Zuleitungsdraht 5 versehen ist. Die Legierungen zwischen Germanium und Indium in den mit 6 und 7 bezeichneten Gebieten bilden Kristallzonen vom P-Typ mit P-N-Übergängen in den Grenzgebieten dieser Zonen, die mit 8 und 9 bezeichnet sind.
In Fig. 2 ist ein Kristallplättchen 1 dargestellt, an dem eine Zuleitung 10 in bekannter Weise befestigt
Verfahren zur Herstellung
eines elektrischen Anschlusses
bei Halbleitern wie Germanium
Anmelder:
International
Standard Electric Corporation,
New York, N.Y. (V. St. A.)
Vertreter: Dipl.-Ing. H. Ciaessen, Patentanwalt, Stuttgart-Zuffenhausen, Hellmuth-Hirth-Str. 42
Beanspruchte Priorität:
'Großbritannien vom 10. Juli 1953
Stanley C. Shepard, London, ist als Erfinder genannt worden
ist. Es ist auch bekannt, die Zuleitung 10 aus verzinntem Nickel herzustellen,- das in ein geeignetes Flußmittel, beispielsweise Zinnchlorid, getaucht wurde und auf das Germaniumplättchen zugleich mit der größeren Indiumperle 4 aufgebracht wird. Die. Anordnung wird" ungefähr 20 Minuten lang ^in Wasserstoff auf 500° C erhitzt. Infolge der Zerbrechlichkeit des
'- "■ Germäniumplättchen's und wegen der Empfindlichkeit gegen geringste Verunreinigungen ist es- "nicht erwünscht, den Anschlußdraht 10 mit irgendwelchen - .klammerartigen Vorrichtungen in seiner Lage festzuhalten. Daher ist es schwierig, den Anschlußdraht richtig nach dem Germaniumplättchen auszurichten.
So kommt es oft vor, daß das Halbleiterplättchen und der Anschluß draht schief zueinander liegen.
Wenn die Indiumperlen an dem Germaniumplättchen befestigt werden, diffundiert etwas Indium nach den Seiten weg und schließt den P-N-Übergang kurz.
Bevor die Vorrichtung arbeiten kann, ist es nötig, dieses Indium zu entfernen, was durch Eintauchen der Vorrichtung in eine wäßrige Lösung von Fluorwasserstoffsäure und Salpetersäure geschieht. Dabei ist außerordentliche Vorsicht nötig, da beim Eintauchen der verzinnten Nickelplatte in die Säuremischung erhebliche Beeinträchtigungen der Vorrichtung die Folge sein können.
Der Zuführungsdraht wird nun aus federndem Material, wie beispielsweise Phosphorbronze oder

Claims (3)

  1. 3 4
  2. Berylliumkupfer, hergestellt und zu einer kurzen Spule Nach einem geeigneten chemischen oder elektromit zwei Windungen geformt, wie dies in den Fig.
  3. 3 chemischen Verfahrensschritt kann die Anordnung in und 4 dargestellt ist. Um ein Halbleiterplättchen von an sich bekannter AVeise beispielsweise in einen Glasden genannten Abmessungen nach den Fig. 1 und 2 kolben 14 eingebaut werden, wie dies in Fig. 7 dardaran befestigen zu können, macht man den Anschluß 5 gestellt ist. Die Drähte 15,16 und 17 werden mit der beispielsweise aus einem Berylliumkupferdraht von Durchführung 19 am Fuß des Glaskolbens dicht ver-0,25 mm Durchmesser, der zu einer Spule mit zwei schmolzen. Die Anordnung kann auch in einen geeig-Windungen geformt wird, die einen inneren Durch- neten Kunststoff eingebettet werden. So kann z. B. messer von 1 mm haben. An dieser Spule bleiben zwei der offene Glaskolben mit Kunstharz gefüllt und die verhältnismäßig lange Enden 11 und 12, wobei das io Anordnung danach in den Glaskolben eingebracht Ende 12 rechtwinklig zum Ende 11 abgebogen wird. werden. Nachdem das Kunstharz erhärtet ist, erhält Die Spule 13 wird so gebogen, daß sich die beiden man eine erschütterungsunempfindliche Anordnung.
    Windungen berühren. Durch Zusammendrücken der Der klammerartig gebogene Zuleitungsdraht erleichEnden 11 und 12 wird die Spule 13 so weit geöffnet, tert das Ausrichten des Germaniumplättchens in bezug daß das Germaniumplättchen I1 wie in den Fig. 5 und 6 15 auf die Anschluß drähte und dessen Handhabung vor dargestellt ist, eingeklemmt werden kann. Wenn die und nach dem Anlöten wesentlich. Die Erfindung erangegebenen Abmessungen von Draht und Germanium- möglicht es außerdem, mit einem Minimum von plättchen verwendet werden, so genügt die Klemm- Wärme für eine ganz kurze Zeit auszukommen. Dies kraft der Spule, um das Germaniumplättchen so gut ist sehr wichtig, da bekanntlich das Germanium sehr darin zu befestigen, daß das Halbleiterelement an den 20 empfindlich für geringe Spuren von Verunreinigungen Zuführungsdrähten gehandhabt werden kann. Die ist, insbesondere wenn es in ihrer Gegenwart erwärmt Spule 13 wird dann dauerhaft an dem Plättchen 1 be- wird. Das Verfahren beschränkt die Erhitzungszeit, festigt, indem man eine kleine Menge Flußmittel während der das Germanium mit Lötmittel, Fluß-(z. B. eine wäßrige Lösung von Zinnchlorid) an den mittel und Kontaktmaterial in Berührung steht, auf Zwischenräumen zwischen den Spulenwindungen 13 25 ein Minimum. Weiterhin kann der Lötprozeß nach entlanglaufen läßt und dann das Innere der Spule mit dem Einlegieren der Indiumperlen in das Germanium Lötmetall ausfüllt. Es wird nur ein ganz kleiner ausgeführt werden, wodurch die Anwesenheit von Tropfen von Flußmittel auf den Spalt zwischen den Zinn und Zinnsalzen während der Bildung des P-N-Windungen der Feder aufgegeben, worauf infolge der Überganges vermieden ist.
    Kapillarwirkung die Flüssigkeit an dem Spalt ent- 30
    langläuft und den Draht sowie die mit ihm in Kontakt Patentanspruch:
    stehende Germaniumoberfläche benetzt. Auf diese Verfahren zur Herstellung eines elektrischen Weise wird nur eine sehr geringe Menge Flußmittel Anschlusses bei Halbleitern, wie Germanium, die an die Stellen gebracht, wo es benötigt wird. nach Erzeugung von Schichten verschiedenen Das Lötmetall, beispielsweise reines Zinn, wird auf 35 Leitungstyps einer Ätzbehandlung unterworfen die Spitze eines kleinen Lötkolbens gebracht. Es eignet werden, insbesondere zur Herstellung des Basissich z. B. ein Lötkolben mit Kupferspitze von unge- kontaktes bei durch Legieren hergestellten Flächenfähr 1,7 mm Durchmesser. Die Spitze des Lötkolbens transistoren, dadurch gekennzeichnet, daß das wird dann mit der Innenseite der Klammer in Berüh- Halbleiterplättchen an einem Ende in eine aus rung gebracht, worauf das Lötmetall die Spule aus- 40 zwei Windungen bestehende Feder aus einem in füllt, das Germanium benetzt und das Germanium- der Ätzlösung nicht löslichen Material, wie Phosplättchen mit der Klammer verlötet. Das Ende 12 phorbronze oder Berylliumkupfer, eingeklemmt wird dann nahe an der Windung abgeschnitten. wird, danach die Schichten unterschiedlichen Lei-Kleine Rückstände des Flußmittels können entfernt tungstyps im Halbleiter erzeugt werden, die Vorwerden, wenn man beispielsweise die Anordnung in 45 richtung dann durch Eintauchen in Säure geätzt Salzsäure taucht und danach mit Wasser abwäscht. wird und darauf die Feder mit dem HalbleiterDas Halbleiterelement wird nun am Sockel be- plättchen verlötet wird,
    festigt. Die Zuleitungsdrähte 3, 5 und 13 werden an
    die tragenden Drähte 15,16 und 17 (Fig. 7), die in In Betracht gezogene Druckschriften:
    ihrer genauen gegenseitigen Lage durch das Isolier- 50 USA.-Patentschriften Nr. 2 513 870, 2 595 475,
    stück 18 gehalten werden, angeschweißt. 2 635 199, 2 639 392.
    Hierzu 1 Blatt Zeichnungen
    © 909 560/350 6.59
DEI8884A 1951-06-08 1954-07-07 Verfahren zur Herstellung eines elektrischen Anschlusses bei Halbleitern wie Germanium Pending DE1060992B (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
GB13657/51A GB716250A (en) 1951-06-08 1951-06-08 Improvements in or relating to electric semi-conducting devices
GB19173/53A GB753488A (en) 1953-07-10 1953-07-10 Improvements in or relating to electrical couplings to semiconductor elements
US434865A US2928030A (en) 1954-06-07 1954-06-07 Semiconductor devices
GB4261/56A GB797822A (en) 1951-06-08 1956-02-10 Improvements in or relating to semi-conductor junction diodes
DEST13682A DE1098102B (de) 1951-06-08 1958-04-23 Verfahren zur Herstellung einer elektrischen Halbleitervorrichtung
GB23454/58A GB835865A (en) 1957-05-21 1958-07-22 Improvements in or relating to crystal rectifiers and methods of manufacture thereof
DE884824X 1958-09-30
DEST15123A DE1255823B (de) 1951-06-08 1959-05-13 Verfahren zum Herstellen von Kuehlkoerpern fuer elektrische Bauelemente aus auf einem Bolzen senkrecht zur Laengsachse angeordneten Kuehlplatten, insbesondere fuer Halbleiterleistungsgleichrichter und Transistoren

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Publication Number Publication Date
DE1060992B true DE1060992B (de) 1959-07-09

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Application Number Title Priority Date Filing Date
DENDAT1069726D Pending DE1069726B (de) 1951-06-08 Galvanisches Element für hohe Strombelastungen und Verfahren zu seiner Herstellung
DEI5966A Expired DE968077C (de) 1951-06-08 1952-06-08 Verfahren zur Herstellung von Kristallgleichrichtern
DEI8884A Pending DE1060992B (de) 1951-06-08 1954-07-07 Verfahren zur Herstellung eines elektrischen Anschlusses bei Halbleitern wie Germanium
DEI10229A Pending DE1015934B (de) 1951-06-08 1955-05-20 Kristallode mit einem in ein dichtes Gehaeuse eingebauten Halbleiterkristall und im Gehaeuse angeordnetem Trockenmittel
DEST13682A Pending DE1098102B (de) 1951-06-08 1958-04-23 Verfahren zur Herstellung einer elektrischen Halbleitervorrichtung
DEST15123A Pending DE1255823B (de) 1951-06-08 1959-05-13 Verfahren zum Herstellen von Kuehlkoerpern fuer elektrische Bauelemente aus auf einem Bolzen senkrecht zur Laengsachse angeordneten Kuehlplatten, insbesondere fuer Halbleiterleistungsgleichrichter und Transistoren

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DENDAT1069726D Pending DE1069726B (de) 1951-06-08 Galvanisches Element für hohe Strombelastungen und Verfahren zu seiner Herstellung
DEI5966A Expired DE968077C (de) 1951-06-08 1952-06-08 Verfahren zur Herstellung von Kristallgleichrichtern

Family Applications After (3)

Application Number Title Priority Date Filing Date
DEI10229A Pending DE1015934B (de) 1951-06-08 1955-05-20 Kristallode mit einem in ein dichtes Gehaeuse eingebauten Halbleiterkristall und im Gehaeuse angeordnetem Trockenmittel
DEST13682A Pending DE1098102B (de) 1951-06-08 1958-04-23 Verfahren zur Herstellung einer elektrischen Halbleitervorrichtung
DEST15123A Pending DE1255823B (de) 1951-06-08 1959-05-13 Verfahren zum Herstellen von Kuehlkoerpern fuer elektrische Bauelemente aus auf einem Bolzen senkrecht zur Laengsachse angeordneten Kuehlplatten, insbesondere fuer Halbleiterleistungsgleichrichter und Transistoren

Country Status (8)

Country Link
US (1) US2785349A (de)
BE (4) BE512559A (de)
CH (2) CH342657A (de)
DE (6) DE968077C (de)
FR (4) FR1066148A (de)
GB (4) GB795113A (de)
LU (1) LU37433A1 (de)
NL (3) NL170157B (de)

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Also Published As

Publication number Publication date
DE1015934B (de) 1957-09-19
FR69762E (fr) 1958-12-30
DE968077C (de) 1958-01-16
DE1255823B (de) 1967-12-07
FR71643E (fr) 1960-01-13
GB795113A (en) 1958-05-14
CH342657A (de) 1959-11-30
CH384722A (de) 1965-02-26
BE512559A (de) 1900-01-01
LU37433A1 (de) 1900-01-01
BE554903A (de) 1900-01-01
NL86185C (de) 1900-01-01
DE1098102B (de) 1961-01-26
US2785349A (en) 1957-03-12
DE1069726B (de) 1959-11-26
GB914592A (en) 1963-01-02
NL170157B (nl) 1900-01-01
FR1066148A (fr) 1954-06-02
GB884824A (en) 1961-12-20
FR66909E (fr) 1957-10-31
GB877644A (en) 1961-09-20
BE538791A (de) 1900-01-01
BE530249A (de) 1900-01-01
NL238107A (de) 1900-01-01

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