GB572511A - Improvements in electric rectifiers - Google Patents

Improvements in electric rectifiers

Info

Publication number
GB572511A
GB572511A GB14267/41A GB1426741A GB572511A GB 572511 A GB572511 A GB 572511A GB 14267/41 A GB14267/41 A GB 14267/41A GB 1426741 A GB1426741 A GB 1426741A GB 572511 A GB572511 A GB 572511A
Authority
GB
United Kingdom
Prior art keywords
cap
tube
crystal
rod
attached
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB14267/41A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB14267/41A priority Critical patent/GB572511A/en
Publication of GB572511A publication Critical patent/GB572511A/en
Priority to US736094A priority patent/US2569892A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12037—Cat's whisker diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Measurement Of Radiation (AREA)
  • Investigating And Analyzing Materials By Characteristic Methods (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

572,511. Detectors. GENERAL ELECTRIC CO., Ltd., BRITTAIN, F. H., and RANSLEY, C. E. Nov. 5, 1941, No. 14267. [Class 40 (v)] [Also in Group II] A crystal detector is assembled by the following method. A crystal is fixed in one end cap of an insulating tube, a second cap carrying the contact device being then attached to the other end of the tube. The contact is adjusted and then fixed in position, and the assembly sealed. The ends 6 of the insulating tube 5, Figs. 4, 6, are coated internally with metal, and it is then attached with fusible alloy to the brass cap 7 standing on the hotplate 12, Fig. 4. The crystal 1 is attached with adhesive 4 to the end of a rod 2, and its exposed surfaces coated with a metallic layer; it is then introduced on the rod 2 into the molten alloy 11 contained in a depression 10 in the cap 7. The hot-plate 12-is rapidly cooled, and when the alloy 11 has set, the rod 2 is detached and removed. The face of the crystal thus exposed is polished. This assembly is now attached to a second cap 13, Fig. 6, which supports a movable rod 16 carrying the whisker contact 17 welded to its upper end. The cap 13 stands on a hot-plate 19, and the open end of the tube 5 fits into a groove 15 containing fusible alloy. The assembly is connected into an electrical testing circuit, the rod 16 adjusted for satisfactory performance, and the hot-plate 19 then rapidly cooled. The rod 16 is held in position by alloy 20 which has overflowed from the groove 15. Finally, the assembly may be filled with wax, through a hole 21 in the tube 5, using a vacuum process. A modification is described using a crystal with plane faces, in which case it may be attached directly to the top of the cap 7 before the tube 5 is attached. The process for coating the crystal 1 with copper is described, and consists in dipping it in a solution of cuprous oxide in hydrofluoric acid. Coating of the insulating tube is performed either by using a proprietory solution, or by reduction of deposited cuprous oxide in hydrogen, or by placing an annulus of copper within the tube and heating.
GB14267/41A 1941-11-05 1941-11-05 Improvements in electric rectifiers Expired GB572511A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB14267/41A GB572511A (en) 1941-11-05 1941-11-05 Improvements in electric rectifiers
US736094A US2569892A (en) 1941-11-05 1947-03-20 Crystal contacts of which one element is mainly silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB14267/41A GB572511A (en) 1941-11-05 1941-11-05 Improvements in electric rectifiers

Publications (1)

Publication Number Publication Date
GB572511A true GB572511A (en) 1945-10-11

Family

ID=10038061

Family Applications (1)

Application Number Title Priority Date Filing Date
GB14267/41A Expired GB572511A (en) 1941-11-05 1941-11-05 Improvements in electric rectifiers

Country Status (1)

Country Link
GB (1) GB572511A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE968077C (en) * 1951-06-08 1958-01-16 Int Standard Electric Corp Process for the manufacture of crystal rectifiers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE968077C (en) * 1951-06-08 1958-01-16 Int Standard Electric Corp Process for the manufacture of crystal rectifiers

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