DE3514253A1 - Halbleitereinrichtung - Google Patents

Halbleitereinrichtung

Info

Publication number
DE3514253A1
DE3514253A1 DE19853514253 DE3514253A DE3514253A1 DE 3514253 A1 DE3514253 A1 DE 3514253A1 DE 19853514253 DE19853514253 DE 19853514253 DE 3514253 A DE3514253 A DE 3514253A DE 3514253 A1 DE3514253 A1 DE 3514253A1
Authority
DE
Germany
Prior art keywords
semiconductor device
connecting wire
hardness
copper
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19853514253
Other languages
English (en)
Inventor
Wahei Kodaira Tokio/Tokyo Kitamura
Hiroshi Tachikawa Tokio/Tokyo Mikino
Susumu Ohme Tokio/Tokyo Okikawa
Hiromichi Tokio/Tokyo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3514253A1 publication Critical patent/DE3514253A1/de
Withdrawn legal-status Critical Current

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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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Description

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BESCHREIBUNG:
Die Erfindung bezieht sich auf eine Halbleitereinrichtung und insbesondere auf eine Technik, die sich bei elektrischen Anschlußdrähten von Halbleitereinrichtungen wirksam anwenden läßt.
Bei Halbleitereinrichtungen ist es weithin akzeptierte Praxis, für die elektrische Verbindung zwischen Anschlußstreifen eines Halbleiterplättchens und Leiterteilen Goldoder Aluminiumdraht zu verwenden.
Golddraht ist jedoch teuer; dabei wird Draht aufgrund des Trends zu Halbleitereinrichtungen hoher Dichte und des steigenden Integrationsgrades in zunehmenden Mengen verwendet, wodurch die Herstellkosten unvermeidbar steigen. Aluminium ist verhältnismäßig billig, korrodiert jedoch leicht und eignet sich nicht für Halbleitereinrichtungen mit Kunstharzumbettungen.
Die Erfinder sind daher auf den Gedanken gekommen, Kupfer zu verwenden, das als Drahtmaterial billig zur Verfügung steht und hervorragende Korrosionsfestigkeit aufweist.
Die Erfinder haben jedoch festgestellt, daß der an der Spitze eines Kupferdrahtes zum Bonden ausgebildete Kugelabschnitt eine Härte von nicht weniger als 80 bis 100 μΗν (Mikrovickers),gemessen bei Anwendung einer Kraft von 0,05 N, aufweist, was bewirkt, daß beim Bonden der Passivierungsfilm und schließlich auch das Halbleiterplättchen brechen.
Der Erfindung liegt die generelle Aufgabe zugrunde, Nachteile, wie sei bei vergleichbaren Halbleitereinrichtungen nach dem Stand der Technik auftreten, mindestens teilweise zu beseitigen. Eine speziellere Aufgabe der Erfindung kann darin gesehen werden, eine Technik anzugeben, die es erlaubt, Halbleiterplättchen und Verdrahtungsteile einer Halbleitereinrichtung mit Kupferdraht elektrisch zu verbinden, ohne den Passivierungsfilm zu zerstören oder zu schwächen,und Halbleitereinrichtungen mit hoher Zuverlässigkeit unter
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verringerten Kosten herzustellen.
Bei der erfindungsgemäßen Halbleitereinrichtung, bei der ein Bruch des Passivierungsfilms des Halbleiterplättchens vermieden wird, die hervorragende Korrosionsbeständigkeit aufweist und sich mit verringerten Kosten unter Verwendung von Kupferdraht herstellen läßt, weist der an der Spitze des Verbindungsdrahtes zum Bonden ausgebildete Kugelabschnitt eine Härte von 35 bis 65 μΗν, gemessen bei einer Kraft von 0,05 N, auf.
Ausführungsbeispiele der Erfindung werden nachstehend
anhand der Zeichnungen näher erläutert. In den Zeichnungen zeigt Fig. 1 einen schematischen Querschnit durch eine gemäß einem Ausführungsbeispiel der Erfindung hergestellte Halbleitereinrichtung; Fig. 2 einen vergrößerten Querschnitt durch die Halbleitereinrichtung nach Fig. 1 zur Veranschaulichung eines Draht-Bondabschnitts;
Fig. 3 und 4 schematische Darstellungen zur Erläuterung der Ausbildung eines Kügelchens an einem Kupferdraht und des Bondvorgangs unter Anwendung
von Ultraschallwellen; und Fig. 5 ein Diagramm, das die Beziehung zwischen der Reinheit des Kupferdrahtes und dem prozentualen Auftreten von Beschädigungen an der Bondstelle wiedergibt.
Bei der Halbleitereinrichtung nach Fig. 1 ist an einer Fahne 2 eines aus einer Kupferlegierung bestehenden Leiterrahmens über eine Verbindungsschicht 4, die aus einem Klebstoff, etvra. einer eutektischen Gold-Silizium-Legierung oder einer Silber-Epoxy-Paste besteht, ein Halbleiterplättchen 3 angebracht. Gemäß Fig. 2 besteht ein Anschlußstreifen 5 des Plättchens 3 aus Aluminium, während ein Verbindungsdraht 6 aus Kupfer besteht.
Der Anschlußstreifen 5 des Plättchens 3 ist über den Verbindungsdraht 6 an einen Aluminiumfilm 14 angeschlossen,
der auf einem inneren Leiterabschnitt 7 eines Leiters 1 ausgebildet ist. Bei dem Film 14 kann es sich um eine Vergoldungs-, Versilberungs- oder Verkupferungsschicht handeln. Nach dem Anbonden der Drähte sind das Plättchen 3f die Verbindungsdrähte 6 usw. mit Kunstharz 8 umgössen worden. Zum Bonden des Drahtes 6 wird gemäß dem vorliegenden Ausführungsbeispiel an der Spitze des Drahtes durch eine elektrische Entladung, die zwischen der Spitze des von einem (nicht gezeigten) Bondgerät gehaltenen Drahtes 6 und einer Elektrode 9 dieses Bondgerätes stattfindet, ein Kugelabschnitt 6a ausgebildet. Durch Wahl des den Draht 6 bildenden Werkstoffs erhält, wie weiter unten beschrieben, der Kugelabschnitt 6a eine zum Bonden geeignete Härte.
Unter Verwendung eines Ultraschall-Bondwerkzeugs 10, das in Fig. 4 gezeigt ist, wird der Kugelabschnitt 6a auf den Aluminium-Anschlußstreifen 5 des Plättchens 3 gedrückt und durch Ultraschallschwingungen fest daran angebondet. Der angedrückte Kugelabschnitt 6a bildet einen Bondabschnitt 6b, der den durch ein Fenster des abschließenden Passivierungsfilms 13 freiliegenden Anschlußstreifen 5 bedeckt.
Ein wichtiges Merkmal dieses Ausführungsbeispiels besteht darin, daß der Draht 6 durch Zonenschmelzen oder Elektrolyse auf eine Reinheit von 99,999 Gewichtsprozent oder höher raffiniert ist und der Kugelabschnitt 6a aus Kupfer einer Härte besteht, die auf einen Bereich von 35 bis 65 μΗν (bei einer Kraft von 0,05 N) gesteuert ist.
Durch Ausbilden des Kupferdrahtes mit einer Härte innerhalb des oben angegebenen Bereichs wird es möglich, ein Anbonden des Kügelchens durchzuführen, ohne den Passivierungsfilm 13 auf dem Plättchen 3 zu zerstören. Dabei wird nämlich ein Draht mit ausreichender Festigkeit erzielt. Ist der Kugelabschnitt 6a zu hart, so treten an der Bondstelle Schäden auf, das heißt die Siliziumdioxid-Schicht 12 unter dem Aluminium-Anschlußstreifen 5 wird durch die beim Bondvorgang aufgebrachte Kraft zerstört. Mit anderen Worten wird der Passivierungsfilm 13 beim Bonden zerstört, wenn
die Härte des Kugelabschnitts 6a des Verbindungsdrahtes 6 den Wert von 65 μΗν überschreitet.
Das Diagramm nach Fig. 5 zeigt die Beziehung zwischen dem prozentualen Auftreten von Beschädigungen der Bondstellen und der Reinheit des Kupferdrahtes, wobei die Ordinate die Beschädigungsrate, das heißt den Prozentsatz an Rissen angibt, die sich in der Isolierschicht 12 bilden, wenn der Bondvorgang mit einem Bondwerkzeug 10 unter Anwendung einer Kraft von 0,8 N ausgeführt wird.
Die Abszisse gibt die Reinheit des Kupferdrahtes wieder, das heißt den Gewichtsprozentsatz an Kupfer in dem Draht. Der Ausdruck "3 N" (3 Neuner) bedeutet, daß Kupfer in einem Gehalt von mindestens 99,9 Gewichtsprozent vorliegt, wobei die Härte des Kugelabschnitts etwa 120 μΗν beträgt. Ein Kupferdraht mit 4 N (4 Neuner) enthält Kupfer in einem Verhältnis von mindestens 99,99 Gewichtsprozent und hat eine Härte von etwa 90 μΗν in dem Kugelabschnitt. Bei 5 N (Kupfergehalt von 99,999 Gewichtsprozent oder mehr) beträgt die Härte etwa 65 μΗν, und bei 6 N (Kupfergehalt von 99,9999 Gewichtsprozent oder mehr) etwa 45 μΗν. Kupferdraht zwischen 6 N und 7 N (Kupfergehalt von 99,99999 Gewichtsprozent oder mehr) hat eine Härte von etwa 30 μΗν. Die Härte des Kupferdrahtes hängt hauptsächlich von seiner Reinheit ab.
Um den Prozentsatz an Beschädigungen an der Bondstelle auf einen zulässigen Bereich von etwa 10% oder weniger zu begrenzen, sollte der Kupferdraht 6 eine Reinheit von höher als 99,999 Gewichtsprozent (5 N) bzw. in dem Kugelabschnitt 6a eine Härte von 65 μΗν oder weniger haben. Ein sehr geringer Prozentsatz von Beschädigungen ergibt sich insbesondere dann, wenn der Kupferdraht in dem Kugelabschnitt 6a eine Härte von weniger als 50 μΗν aufweist.
Im Rahmen der vorliegenden Erfindung liegen solche Kupferdrähte, deren Reinheit im wesentlichen über 99,999 Gewichtsprozent liegt, sowie solche Kupferdrähte, deren Härte im Kugelabschnitt im wesentlichen unter 65 μΗν liegt.
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Nach verschiedenen Raffinierverfahren hergestellte Kupferdrähte können unterschiedliche Verunreinigungen in unterschiedlichen Anteilen enthalten. Daher weisen selbst Kupferdrähte der gleichen Reinheit unterschiedliche Härtegrade auf.
Ferner kann selbst dann, wenn Kupferdrähte mit gleicher Härte verwendet werden, der Prozentsatz an Beschädigungen im Bondbereich je nach den Bondbedingungen schwanken. Diese Faktoren erscheinen in Fig. 5 in Form einer Streuungsbreite im Prozentsatz an Beschädigungen.
Darüberhinaus hängt die Mikrovickers-Härte vom Meßverfahren ab. Das Meßverfahren für die Mikrovickers-Härte ist unter der Nummer Z 2244 der japanischen Industrienorm (Japanese industrial standard) spezifiziert, wonach eine scharfe Spitze eines kleinen Diamantkristalls unter Anwendung einer vorgegebenen Kraft in den zu prüfenden Werkstoff eingedrückt und die Härte durch Messung der Eindringtiefe der Diamantspitze bestimmt wird. Diese Eindringtiefe schwankt jedoch in Abhängigkeit davon, ob die Diamantspitze auf ein Kupferkorn oder eine Korngrenze trifft. Daher treten scheinbare Schwankungen in der Mikrovickers-Härte auf.
Im Rahmen des vorliegenden Ausführungsbeispiels wird die Mikrovickers-Härte nach dem oben angegebenen Verfahren unter Anwendung einer Kraft von 0,05 N gemessen. (In der genannten Norm wird die Kraft mit g.f und die Härte mit MHv angegeben.)
Das einfachste Mittel zur Erzielung einer Härte von 35 bis 65 μΗν in dem Kugelabschnitt 6a des Kupferdrahtes 6 besteht darin, die Reinheit des Kupfers auf 99,999 Gewichtsprozent oder mehr zu erhöhen.
Zu den Beispielen der zweckmäßigsten Verfahren zur Erzielung von Kupferdrähten mit einer Reinheit von über 99,999 Gewichtsprozent gehören das Zonenschmelzverfahren und das Elektrolyseverfahren.
Tabelle
35U253
Ag Fe Bi As Verunreinigungen Zn Pb Ni Sn Si Gesamt
7 6 1 1 Sb P <1 1 1 1 1
Kupferplatte 4 3 1 «1 <1 <0.5 <1 1 1 1 1 <21
nach
Elektrolyse		 3 2 <1 <0.5 <! <1 1 <15
nach
Zonenschmelze		 <1 <0.5 <xo
Die obige Tabelle zeigt die Verfahren, die die Erfinder angewendet haben, um die Reinheit von Kupferdrähten zu erhöhen, und die dabei erzielten Ergebnisse. Die Ziffern der Tabelle bezeichnen jeweils den Störstoffgehalt in ppm (parts per million), wobei <1 angibt, daß der Verunreinigungsgehalt kleiner ist als 1 ppm.
Zunächst wurde eine Kupferplatte hergestellt. Die Kupferplatte enthielt verschiedene Verunreinigungen gemäß der Tabelle in Mengen von etwa 20 bis 21 ppm.
Unter Verwendung von Schwefelsäure wurde das Kupfer elektrolytisch raffiniert. Die Elektrolyse kann dabei einmal oder mehrmals ausgeführt werden. Die Reinheit der den Elektrolyt bildenden Schwefelsäurelösung muß erhöht sein. Nach der Elektrolyse betragen die Verunreinigungen im Kupfer, insbesondere Eisen, ungefähr nur noch die Hälfte.
Ein nach der Elektrolyse aus dem Kupfer hergestellter Gußblock wurde dem Zonenschmelzverfahren unterworfen, das einmal oder mehrmals durchgeführt wurde. Nach dem Zonenschmelzen hatte der Gehalt an Verunreinigungen im Kupfer · auf weniger als 10 ppm abgenommen. Insbesondere verringerte sich der Nickelgehalt auf weniger als 1 ppm.
Gemäß einer von den Erfindern durchgeführten Untersuchung wird die Härte des Kupfers unter den obigen Verunreinigungen stark durch Eisen und Nickel beeinflußt. Durch Elektrolyse und Zonenschmelzen lassen sich die Eisen- und
Nickelanteile verringern.
Durch wiederholte Durchführung der Elektrolyse bzw. des Zonenschmelzen läßt sich die Reinheit des Kupfers so weit erhöhen, daß die Härte in dem Kugelabschnitt einen Wert von 35 μΗν annimmt.
Ist der Härtegrad zu niedrig, so verformt sich der Draht in unerwünschter Weise.
Für eine Härte im Bereich von 40 bis 50 μΗν ist die Anzahl der Wiederholungen der Elektrolyse und des Zonenschmelzens geringer, wodurch sich die Herstellkosten reduzieren, Um einen Kupferdraht mit einer Härte von weniger als 35 μΗν zu erzielen, müssen die Elektrolyse und das Zonenschmelzen viele Male durchgeführt werden. In diesem Fall wird der Kupferdraht sehr teuer.
Um den Kupferdraht 6 zunächst an den Anschlußstreifen des Halbleiterplättchens 3 anzubonden, kann an der Drahtspitze unter Verwendung eines Wasserstoffbrenners oder dergleichen ein Kügelchen angeformt werden. Der Kupferdraht kann dabei lediglich durch Thermokompressions-Bonden befestigt werden; zusätzlich kann auch mit Ultraschallvibration gearbeitet werden. Um den Kupferdraht als zweiten Schritt an den Leiter 1 anzubonden, muß nicht unbedingt ein Kügelchen angeformt werden; andererseits ist dies ohne Problem möglich.
Aufgrund der Erfindung lassen sich die nachstehenden Wirkungen erzielen.
Durch Verwendung eines Kupferdrahtes mit einer Härte von 35 bis 65 μΗν (gemessen bei einer Kraft von 0,05 N) in dem Kugelabschnitt wird vermieden, daß der Passivierungsfilm beim Bonden zerstört wird, und es wird eine Bond-Verbindung ausreichender Festigkeit erzielt.
Die erwähnte Härte läßt sich ohne weiteres durch Erhöhung des Kupfergehaltes in dem Draht auf 99,999 Gewichtsprozent oder darüber erreichen. Die Erfinder haben bestätigt, daß sich die Härte des Kupferdrahtes durch den Gehalt von Verunreinigungen erhöht.
Durch Verwendung eines Kupferdrahtes mit einer Härte von 35 bis 65 μΗν (gemessen bei einer Kraft von 0,05 N) in
dem Kugelabschnitt wird eine Halbleitereinrichtung mit guter Korrosionsbeständigkeit erzeugt.
Die Korrosion eines Kupferdrahtes wird durch darin enthaltene Verunreinigungen ausgelöst; je höher der Reinheitsgrad des Kupfers ist, desto größer ist die Korrosionsfestigkeit. Die Korrosionsbeständigkeit von Kupferdraht ist höher als die von Aluminiumdraht.
Durch Raffinieren des Drahtes mittels Zonenschmelzen oder Elektrolyse erhält man einen sehr reinen Kupferdraht mit guter Schleifenform; gleichzeitig läßt sich die Korrosionsbeständigkeit erheblich verbessern.
Aus den obigen Gründen wird es möglich, Halbleitereinrichtungen mit hoher Zuverlässigkeit billig herzustellen.
Die obige Beschreibung befaßt sich hauptsächlich mit dem Fall, bei dem die Erfindung auf eine Halbleitereinrichtung mit Kunstharzumgießung gemäß dem Stand der Technik angewendet wird. Die Erfindung beschränkt sich jedoch nicht darauf, sondern ist auch bei mit Verdrahtungen arbeitenden Halbleitereinrichtungen anwendbar, die hermetisch dicht eingeschlossen sind.
PS /CG

Claims (9)

  1. .;. PATENTANWÄLTE. . ...
    STREHL SCHÜBEL-HOPF SCHULZ 3514253
    WIDENMAYERSTRASSE 17, D-8000 MÜNCHEN 22
    HITACHI, LTD.
    DEA-27 014
    19. April 1985
    Halbleitereinrichtung
    PATENTANSPRÜCHE
    ■ ti Halbleitereinrichtung mit einem Kuofer-Verbindungsdraht (6), der einen Leiter (1) mit einem auf einem Halbleiterplättchen (3) vorhandenen Anschlußstreifen (5) elektrisch verbindet, wobei an der Spitze des Verbindungsdrahtes (6) ein Kugelabschnitt (6a) zum Bonden vorgesehen ist, dadurch gekennzeichnet , daß der Kugelabschnitt (6a) an dem dem Anschlußstreifen (5) zugewandten Ende des Verbindungsdrahtes (6) eine Härte von weniger als 65 Mikrovickers aufweist.
  2. 2. Halbleitereinrichtunq nach Anspruch 1, dadurch gekennzeichnet , daß der Verbindungsdraht
    (6) Kupfer in einer Menge von mehr als 99,999 Gewichtsprozent enthält.
  3. 3. Halbleitereinrichtung mit einem Kupfer-Verbindungsdraht (6)/ der einen Leiter (1) mit einem auf einem Halbleiterplättchen (3) vorhandenen Anschlußstreifen (5) elektrisch verbindet, dadurch gekennzeichnet , daß der Verbindungsdraht (6) Kupfer in einer Menge von mehr als 99,999 Gewichtsprozent enthält.
  4. 4. Halbleitereinrichtung nach Anspruch 3, wobei an dem dem Anschlußstreifen (5) zugewandten Ende des Verbindungsdrahtes (6) ein Kugelabschnitt (6a) ausgebildet ist, dadurch gekennzeichnet , daß der Kugelabschnitt (6a) eine Härte von weniger als 65 Mikrovickers aufweist.
  5. 5. Halbleitereinrichtung nach Anspruch 1, 2 oder 4, dadurch gekennzeichnet , daß der Kugelabschnitt (6a) eine Härte von mindestens 35 Mikrovickers, vorzugsweise eine Härte im Bereich von 40 bis 50 Mikrovickers, aufweist.
  6. 6. Halbleitereinrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet , daß der Verbindungsdraht (6) Eisen in einer Menge von weniger als 2 ppm enthält.
  7. 7. Halbleitereinrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet , daß
    35H253
    der Verbindungsdraht (6) Nickel in einer Menge von weniger als 1 ppm enthält.
  8. 8. Halbleitereinrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet , daß der Verbindungsdraht (6) durch Elektrolyse und/oder Zonenschmelzen raffiniert ist.
  9. 9. Halbleitereinrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet , daß das Halbleiterplättchen (3), der Verbindungsdraht (6) und ein Teil des Leiters (1) mit einem Kunstharz umgössen sind,
DE19853514253 1984-04-19 1985-04-19 Halbleitereinrichtung Withdrawn DE3514253A1 (de)

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JPS62111455A (ja) * 1985-11-08 1987-05-22 Mitsubishi Metal Corp 半導体装置のボンディングワイヤ用高純度銅極細線の製造法
JPS6294969A (ja) * 1985-10-22 1987-05-01 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPH0736431B2 (ja) * 1985-06-28 1995-04-19 三菱マテリアル株式会社 半導体装置のボンディングワイヤ用高純度銅の製造法
JPS6222469A (ja) * 1985-07-22 1987-01-30 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPS61224443A (ja) * 1985-03-29 1986-10-06 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor
WO2005073434A1 (ja) 2004-01-29 2005-08-11 Nippon Mining & Metals Co., Ltd. 超高純度銅及びその製造方法
DE102005011028A1 (de) * 2005-03-08 2006-09-14 W.C. Heraeus Gmbh Kupferbonddraht mit verbesserten Bond- und Korrosionseigenschaften
EP2133915A1 (de) * 2008-06-09 2009-12-16 Micronas GmbH Halbleiteranordnung mit besonders gestalteten Bondleitungen und Verfahren zum Herstellen einer solchen Anordnung
KR101058765B1 (ko) 2008-09-30 2011-08-24 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 고순도 구리 및 전해에 의한 고순도 구리의 제조 방법
CN115966478A (zh) * 2021-10-11 2023-04-14 恩智浦美国有限公司 半导体器件和封装的方法

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DD133285A1 (de) * 1977-09-05 1978-12-20 Ruediger Uhlmann Bonden eines drahtes mit einer anschlussflaeche
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DD133285A1 (de) * 1977-09-05 1978-12-20 Ruediger Uhlmann Bonden eines drahtes mit einer anschlussflaeche
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KR930008979B1 (ko) 1993-09-17
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GB2157607B (en) 1988-09-28
KR850008244A (ko) 1985-12-13
FR2563380A1 (fr) 1985-10-25
MY102548A (en) 1992-07-31
FR2563380B1 (fr) 1987-02-27
HK40390A (en) 1990-06-01
IT1184445B (it) 1987-10-28
HK40190A (en) 1990-06-01
JPS60223149A (ja) 1985-11-07
GB8503143D0 (en) 1985-03-13
FR2563381A1 (fr) 1985-10-25

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