KR930008979B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR930008979B1
KR930008979B1 KR1019850002025A KR850002025A KR930008979B1 KR 930008979 B1 KR930008979 B1 KR 930008979B1 KR 1019850002025 A KR1019850002025 A KR 1019850002025A KR 850002025 A KR850002025 A KR 850002025A KR 930008979 B1 KR930008979 B1 KR 930008979B1
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South Korea
Prior art keywords
bonding
ball
wire
semiconductor device
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KR1019850002025A
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English (en)
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KR850008244A (ko
Inventor
스스무 오기가와
히로시 미기노
히로미지 스즈기
와헤이 기다무라
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
미쓰다 가쓰시게
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Publication of KR850008244A publication Critical patent/KR850008244A/ko
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Publication of KR930008979B1 publication Critical patent/KR930008979B1/ko

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Abstract

내용 없음.

Description

반도체 장치
제 1 도는 본 발명의 반도체 장치의 개략을 도시한 단면도.
제 2 도는 제 1 도의 반도체 장치의 와이어 본딩부의 확대 부분 단면도.
제 3 도 및 제 4 도는 구리 와이어의 볼 형상 및 초음파 본딩 상태를 도시한 설명도.
제 5 도는 구리 와이어의 순도와 본딩 손상의 발생율의 관계를 도시한 도면.
본 발명은 반도체 장치에 관한 것으로, 특히 반도체 장치의 전기적 접속용의 와이어에 적용하여 유효한 기술에 관한 것이다.
반도체 장치에 있어서, 펠릿의 본딩 패드와 리이드부를 전기적으로 접속할때의 금(Au) 또는 알루미늄(Al)등의 와이어를 사용하는 것이 알려져 있다.
그러나, 금을 사용한 와이어는 고가이고, 반도체 장치의 고밀도 고집적화에 따라 와이어의 필요량도 증대하여 코스트가 높아질 수 밖에 없다. 알루미늄은 재료로서는 저렴하지만, 내식성이 나쁘고, 특히, 레진 몰들형의 반도체에는 적합하지 않다.
이때문에 본 발명자는 와이어의 재료로서 저렴하고, 더우기 내식성이 우수한 구리(Cu)를 사용하는 것을 고려하였다.
그러나, 와이어는 선단에 본딩을 위해 형성된 볼부의 경도가 5g의 가중(5g·f)를 사용하여 측정한 경우에 마이크로비커스 경도 MHv=80~100으로 매우 단단하고, 본딩시에 패시베이션막을 파괴하고, 펠릿을 파손해 버린다고 하는 것을 본 발명자가 발견하였다.
본 발명의 목적은 패시베이션막의 파괴나 강도 부족을 발생하는 일없이 반도체 장치의 펠릿과 배선부의 전기적 접속을 구리 와이어를 사용하여 실행할 수 있는 기술을 제공하는 것이다.
본 발명의 다른 목적은 구리 와이어를 사용한 코스트가 낮고 신뢰성이 높은 반도체 장치의 제조를 실행할 수 있는 기술을 제공하는 것이다.
본 발명의 상기 및 그밖의 목적과 새로운 특징은 본 명세서의 기술 및 첨부 도면에 의해 더욱 명확하게 될 것이다.
본원에 있어서 개시되는 발명중 대표적인 것의 개요를 간단히 설명하면 다음과 같다.
본딩 와이어의 선단에 본딩을 위해 형성된 볼부의 경도가 5g의 가중(5g·f)를 사용하여 측정하였을때, 마이크로비커스 경도 MHz=35~65의 구리선을 사용하는 것에 의해, 펠릿의 패시베이션막등의 파손을 방지하고, 내식성이 우수한 낮은 코스크의 반도체 장치를 제공한다.
제 1 도의 반도체 장치에 있어서, 구리계 리이드 프레임의 탭(2)의 위에는 실리콘등의 반도체 펠릿(3)이 금-실리콘 공융혼합물이나 온페이스트 등의 접착제 등으로 이루어지는 접합층(4)에 의해 부착되어 있다.
펠릿(3)의 본딩 패드(5)는 제 2 도에 도시한 바와같이, 알루미늄으로 이루어진다.
한편, 본딩 와이어(6)은 구리로 이루어지는 와이어이다. 본딩 와이어(6)으로 펠릿(3)의 패드(5)와 리이드(2)의 내부 리이드부상에 형성된 알루미늄막(14)를 전기적으로 접속한다. 막(14)는 금, 은 또는 구리를 도금한 것이라도 좋다.
와이어 본딩을 종료한후, 펠릿(3), 본딩 와이어(6) 등은 수지 레진(8)로 몰드된다.
상기 본딩 와이어(6)의 본딩을 실행하기 위해, 본 실시예에서는 제 3 도에 도시한 바와같이, 도면밖의 와이어 본더에 유지된 와이어(6)의 선단과 도면밖의 와이어 본더의 전극(9) 사이에서의 방전에 의해 와이어 선단에 볼부(6a)를 형성한다. 와이어(6)의 재료를 다음에 기술하는 특정의 것으로 하는 것에 의해, 볼부(6a)는 본딩에 적당한 경도로 되어 있다.
볼부(6a)를 예를 들면, 제 4 도에 도시한 바와같은 초음파 본딩공구, 예를 들면 캐필러리(10)을 사용하여 펠릿(3)의 알루미늄 패드(5)의 위에 눌러붙어서 초음파 진동으로 강하고 단단하게 본딩된다.
볼부(6a)는 눌러붙여져서 본딩부(6b)를 형성한다. 본딩부(6b)는 최종 보호막(13)의 열림구멍부에서 노출한 알루미늄 패드(5)를 덮는다.
본 실시예의 특징은 상기 와이어(6)의 대역 순화법(zone refining)이나 전해에 의해 순도가 99.999중량%이상의 고순도로 정제되고, 볼부의 마이크로비커스 경도가 MHv=35~65(약 5g·f)로 제어된 구리로 이루어지는 것에 있다.
구리 와이어를 상기 수치의 경도로 하는 것에 의해, 펠릿(3)상의 패시베이션막을 파괴하는 일없이 볼 본딩을 실행할 수 있고, 또 충분한 강도의 와이어를 얻을 수 있다. 볼부(6a)의 경도가 과도하면, 와이어 본딩시의 힘으로 알루미늄 패드(5) 아래의 이산화실리콘(SiO2)층 (12)가 파괴된다고 하는 본딩 손상을 발생한다. 즉, 와이어(6)의 볼부(6a)의 마이크로비커스 경도가 65를 넘으면, 본딩시에 패시베이션막(12)를 파괴하여 버린다.
제 5 도는 본딩 손상의 발생율과 와이어의 순도의 관계를 도시한 것이다.
종축은 본딩 손상의 발생을 나타내고, 본딩공구(10)을 사용하여 80g의 가중으로 본딩하였을때에 절연막(12)등에 파괴등이 발생한 비율을 나타낸다.
횡축은 구리 와이어의 순도, 즉 와이어중의 구리의 중량 퍼센트를 나타낸다. 3N(three nine)은 구리가 와이어중에 99.9중량%이상 포함되는 것을 나타내고, 이때 볼부의 마이크로비커스 경도 MHv는 약 120이다. 4N(four nine)의 구리 와이어는 99.99중량%이상의 구리를 포함하고 볼부의 마이크로비커스 경도 MHv는 약 90이다. 마찬가지로 5N(99.99중량%이상)에서, 마이크로비커스 경도 MHv는 약 65.6N(99.999중량% 이상)에서 마이크로비커스 경도는 45이다. 6N의 와이어와 7N(99.99999중량%이상)의 와이어의 중간값의 와이어의 마이크로비커스 경도 MHv는 약 30이다. 구리 와이어의 경도는 그의 순도에 크게 의존한다.
본딩 손상의 발생율의 허용할 수 있는 범위가 약 10% 이하인 것을 고려하면, 와이어(6)으로서 순도 99.999중량%(five nine) 이상의 구리 와이어 또는 불부(6a)의 경도가 마이크로비커스 경도 MHv=65 이하의 구리 와이어가 좋다. 특히, 볼부(6a)의 경도가 마이크로비커스 경도 MHv=50 이하의 구리 와이어를 사용한 경우, 본딩 손상 발생율은 매우 작다.
여기서, 실질적으로 순도 99.999중량%이상으로 간주되는 구리 와이어 및 볼부의 마이크로비커스 경도가 실질적으로 65이하로 간주되는 구리 와이어도 본 발명은 포함한다.
다른 정제 방법에 의한 구리 와이어는 함유되는 불순물 및 그의 비율이 다르다. 따라서, 동일 순도의 구리 와이어에서도 경도가 다른 경우가 있다.
또 동일 경도의 구리 와이어를 사용하여도 본딩의 조건에 의해 본딩 손상의 발생율이 다르다.
이것은 제 5 도의 본딩 손상 발생율의 변동으로 되어 나타난다.
더우기 마이크로비커스 경도는 측정 방법에 의해 변동한다. 마이크로비커스 경도의 측정 방법은 일본 공업 규격이 Z2244에 나타나 있다. 이것에 의하면, 마이크로비커스 경도는 다이어몬드의 작은 결정편의 뾰족한 선단을 피측정물에 일정의 가중으로 누르고, 그 결과, 다이어몬드가 어느 정도의 깊이까지 들어갔는가에 의해 측정한다. 다이어몬드의 선단이 구리의 입자에 맞닿는 경우와 구리의 입자경계에 맞닿는 경우에서 그 침입하는 깊이가 다르다. 이 때문에 마이크로비커스 경도가 다른것처럼 보인다.
또한, 본 실시예에서 마이크로비커스 경도는 상기 방법에 따라 5g의 가중을 가하여 실측한 값을 나타내고 있고, 그것을 5g·f로서 나타내고 있다.
구리 와이어(6)의 볼부(6g)의 마이크로비커스 경도 MHv를 35~65로 하는 가장 용이한 수단은 구리의 순도를 99.999중량%이상까지로 높이는 것이다.
99.999중량%이상의 순도의 구리 와이어를 얻는 가장 좋은 방법으로서는 대역 순화법이나 전해법을 들 수 있다.
[표 1]
Figure kpo00001
표 1은 구리 와이어의 순도를 높이기 위해 본 발명자가 사용한 방법과 그 결과를 나타낸다. 표중의 숫자는 각 불순물의 함유율을 백만분율(parts per million)으로 나타내고, 〈1은 그 불순물의 함유량이 1PPM보다 작은 것을 나타낸다.
처음에 구리판을 준비한다. 구리판에는 표 1에 도시한 여러가지 불순물이 약 20PPM 함유되어 있다.
황산을 사용한 전해에 의해 구리를 정제한다. 전해는 1회 또는 수회 실행한다. 전해액인 황산 용액의 순도를 높게 할 필요가 있다. 이 전해후, 구리중의 불순물, 특히 철(Fe)가 약 1/2까지 저감된다.
전해후의 구리를 사용하여 생산한 잉곳에 대역 순화법을 실시한다. 대역 순화법은 1회 또는 수회 실행한다. 대역 순화후, 구리중의 불순물은 10PPM 이하까지 저감된다. 특히, 니켈(Ni)가 1PPM이하로 저감된다.
구리의 경도에 크게 영향을 주는 것은 본 발명자의 연구에 의하면, 상기 불순물중에서 철과 니켈이다. 전해와 대역 순화를 실행하는 것에 의해, 철과 니켈의 함유량을 낮출 수 있다. 전해 및 대역 순화를 각각 여러회 실행하는 것에 의해, 볼부의 마이크로비커스 경도가 35로 될때까지 구리의 순도를 높일 수 있다.
경도가 너무 작으면, 와이어가 변형을 초래하여 바람직하지 않다.
또 마이크로비커스 경도가 40~50의 범위인 경우, 전해 및 대역순환의 회수가 작은 만큼 저코스트화가 도모된다. 마이크로비커스 경도가 35이하의 구리 와이어를 얻기 위해서는 매우 많은 회수의 전해 및 대역 순화를 필요로 하므로, 와이어는 매우 고가로 된다.
또한, 와이어(6)을 사용하여 적어도 퍼스트 본드(펠릿(3)의 본딩 패드로의 본드)를 실행하기 앞서 수소토치등을 사용하여 와이어의 선단에 볼을 형성하여도 좋다. 또 이때, 열압착만이라도 좋고 열압착에 초음파 진동을 가해도 좋다. 세컨드 본드(리이드(1)로의 본드)는 반드시 볼 본딩할 필요는 없지만 볼 본딩하여도 특히 문제는 없다.
본 발명에 의하면, 다음의 효과가 얻어진다.
본딩 와이어로서 볼부의 마이크로비커스 경도 MHv가 35~64(약 5g·f)의 구리 와이어를 사용하는 것에 의해, 본딩시의 패시베이션막의 파괴를 방지할 수 있고, 더욱 충분한 접착 강도를 얻을 수 있다.
상기 경도는 와이어의 구리 비율을 99.999중량% 이상으로 하는 것에서 용이하게 달성할 수 있다. 구리 와이어는 불순물을 혼입하는 것에서 경도가 커지는 것을 확인하고 있다.
본딩 와이어로서 볼부의 마이크로비커스 경도 MHv=35~65(약 5g·f)의 구리선을 사용하는 것에 의해, 내식성이 양호한 반도체 장치를 제공할 수 있다.
구리 와이어의 부식은 그것에 함유되는 불순물에 의해 발생하고, 구리의 순도를 크게하며, 내식성도 좋아진다. 구리 와이어의 내식성은 알루미늄 와이어의 내식성보다 우수하다.
와이어를 대역 순화법이나 전해로 정제하는 것에 의해, 고순도의 구리 와이어를 얻을 수 있고, 더우기 내식성이나 루프 형상을 대폭적으로 향상시킬 수 있다.
상술한 바와같이, 신뢰성이 높은 반도체 장치를 저가로 제공할 수 있다.
이상, 본 발명자에 의해 이루어진 발명을 실시예에 따라 구체적으로 설명하였지만 본 발명은 상기 실시예에 한정되는 것은 아니고 그 요지를 이탈하지 않는 범위에서 여러가지로 변경가능한 것은 물론이다.
이상의 설명에서는 주로 본 발명자에 의해 이루어진 발명은 그 배경으로 된 이용분야인 레지 몰드형 반도체 장치에 적용한 경우에 대하여 설명하였지만, 그것에 한정되는 것은 아니고, 예를 들면 기밀 봉지형의 반도체 장치등 와이어를 사용하는 것이라면 어떠한 반도체 장치에도 적용할 수 있다.

Claims (15)

  1. 제 1 및 제 2의 대향하는 주면과 상기 제 1의 주면상의 보호막상에 형성된 여러개의 본딩 패드(5)를 갖는 반도체 펠릿(3), 반도체 펠릿(3)의 제 2의 주면에 부착된 탭부(2), 내부 리이드(7)과 외부 리이드로 이루어지는 여러개의 리이드(1), 상기 반도체 펠릿(3)의 제 1의 주면상의 본딩 패드(5)를 상기 리이드(1)의 각각의 내부 리이드(7)에 전기적으로 접속하고 또한 본딩 와이어의 각각의 선단에 볼(6a)를 형성하여 캐필러리(10)의 선단에서 대응하는 본딩 패드(5)에 눌러붙이는 것에 의해 각각의 본딩 패드에 축방향 대칭으로 볼 본딩되어 있는 여러개의 본딩 와이어(6), 상기 반도체 펠릿(3), 탭부(2), 본딩 와이어(6), 적어도 리이드(1)의 내부 리이드(7)을 봉지하는 봉지체(8)을 포함하며, 상기 볼부(6a)가 각각의 본딩 패드(5)에 본딩 되기전에 볼 본딩될때에 상기 보호막(12)가 파괴되지 않도록 상기 본딩 와이어(6)은 각각의 볼부(6a)가 5g의 가중을 사용하여 측정된 경우의 마이크로비커스 경도가 35~65이고, 또한 99.999중량%이상의 고순도의 구리로 이루어지는 반도체 장치.
  2. 제 1 항에 있어서, 상기 볼부(6a)는 볼부가 상기 각각의 본딩 패드에 본딩되기전에 5g의 가중에 의해 측정된 것으로서 40~50의 마이크로비커스 경도를 갖는 반도체 장치.
  3. 제 1 항에 있어서, 상기 본딩 와이어(6)은 2PPM 이하의 철을 함유하는 반도체 장치.
  4. 제 1 항에 있어서, 상기 본딩 와이어(6)은 1PPM 이하의 니켈을 함유하는 반도체 장치.
  5. 제 4 항에 있어서, 상기 본딩 와이어(6)은 2PPM 이하의 철을 함유하는 반도체 장치.
  6. 제 5 항에 있어서, 볼부(6a)는 상기 본딩 패드(5)측의 상기 본딩 와이어(6)의 각각의 선단에 형성되고, 5g의 가중에 의해 측정된 것으로서 65이하의 마이크로비커스 경도를 갖는 반도체 장치.
  7. 제 1 항에 있어서, 상기 본딩 와이어(6)은 전해후 대역 순화에 의해 정제되는 반도체 장치.
  8. 99.999중량%이상의 구리를 함유하는 접속용 와이어(6)을 준비하는 공정, 제 1 및 제 2의 대향하는 주면과 상기 제 1의 주면상에 형성된 여러개의 본딩 패드(5)를 갖는 반도체 펠릿(3)을 준비하는 공정, 상기 반도체 펠릿을 지지하는 제 1의 부분과 상기 접속용 와이어를 접속하는 제 2의 부분을 갖는 리이드 프레임을 준비하는 공정, 상기 펠릿의 제 2의 주면을 상기 제 1의 부분에 고정시키는 공정, 방전에 의해 상기 접속용 와이어(6)의 선단에 볼형상부(6a)를 형성하는 공정, 캐필러리(10)의 선단에서 상기 볼형상부(6a)를 상기 본딩패드(5)의 적어도 하나에 본딩하고 상기 볼형상이 아닌 상기 접속용 와이어(6)의 다른 부분을 상기 제 2의 부분에 본딩하는 공정, 상기 반도체 펠릿(3), 상기 리이드 프레임의 상기 제 1 및 제 2의 부분, 접속용 와이어(6)을 봉지하는 공정을 포함하며, 상기 볼부(6a)는 상기 볼형상부가 각각의 본딩 패드(5)에 본딩되기 전에 5g의 가중에 의해 측정된 것으로서 35~65의 마이크로비커스 경도를 갖는 반도체 장치의 제조 방법.
  9. 제 8 항에 있어서, 상기 볼형상부(6a)는 상기 볼형상부가 각각의 본딩 패드(5)에 본딩되기전에 5g이 가중에 의해 측정된 것으로서 40~50의 마이크로비커스 경도를 갖는 반도체 장치의 제조 방법.
  10. 제 8 항에 있어서, 상기 접속용 와이어(6)은 볼형상부(6a)가 각각의 본딩 패드(5)에 본딩되기전에 65이하의 마이크로비커스 경도를 갖는 반도체 장치의 제조 방법.
  11. 제 8 항에 있어서, 상기 접속용 와이어는 2PPM이하의 철을 함유하는 반도체 장치의 제조 방법.
  12. 제 8 항에 있어서, 상기 접속용 와이어는 1PPM이하의 니켈을 함유하는 반도체 장치의 제조 방법.
  13. 제 8 항에 있어서, 상기 접속용 와이어는 2PPM이하의 철을 함유하는 반도체 장치의 제조 방법.
  14. 제 13 항에 있어서, 상기 볼형상부(6a)는 상기 본딩 패드(5)측의 상기 접속용 와이어(6)의 각각의 선단에 형성되고, 또한 5g의 가중에 의해 측정된 것으로서 65이하의 마이크로비커스 경도를 갖는 반도체 장치의 제조 방법.
  15. 제 8 항에 있어서, 상기 접속용 와이어(6)은 전해후 대역 순화에 의해 정제되는 반도체 장치의 제조 방법.
KR1019850002025A 1984-04-19 1985-03-27 반도체 장치 KR930008979B1 (ko)

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JP79113 1984-04-19
JP59-79113 1984-04-19
JP59079113A JPS60223149A (ja) 1984-04-19 1984-04-19 半導体装置

Publications (2)

Publication Number Publication Date
KR850008244A KR850008244A (ko) 1985-12-13
KR930008979B1 true KR930008979B1 (ko) 1993-09-17

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KR1019850002025A KR930008979B1 (ko) 1984-04-19 1985-03-27 반도체 장치

Country Status (8)

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JP (1) JPS60223149A (ko)
KR (1) KR930008979B1 (ko)
DE (1) DE3514253A1 (ko)
FR (2) FR2563380B1 (ko)
GB (1) GB2157607B (ko)
HK (2) HK40390A (ko)
IT (1) IT1184445B (ko)
MY (1) MY102548A (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62111455A (ja) * 1985-11-08 1987-05-22 Mitsubishi Metal Corp 半導体装置のボンディングワイヤ用高純度銅極細線の製造法
JPS6294969A (ja) * 1985-10-22 1987-05-01 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPS6222469A (ja) * 1985-07-22 1987-01-30 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPS61224443A (ja) * 1985-03-29 1986-10-06 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPH0736431B2 (ja) * 1985-06-28 1995-04-19 三菱マテリアル株式会社 半導体装置のボンディングワイヤ用高純度銅の製造法
US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor
JP4519775B2 (ja) 2004-01-29 2010-08-04 日鉱金属株式会社 超高純度銅及びその製造方法
DE102005011028A1 (de) * 2005-03-08 2006-09-14 W.C. Heraeus Gmbh Kupferbonddraht mit verbesserten Bond- und Korrosionseigenschaften
EP2133915A1 (de) * 2008-06-09 2009-12-16 Micronas GmbH Halbleiteranordnung mit besonders gestalteten Bondleitungen und Verfahren zum Herstellen einer solchen Anordnung
WO2010038641A1 (ja) 2008-09-30 2010-04-08 日鉱金属株式会社 高純度銅及び電解による高純度銅の製造方法
CN115966478A (zh) * 2021-10-11 2023-04-14 恩智浦美国有限公司 半导体器件和封装的方法

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US3507033A (en) * 1965-01-06 1970-04-21 Western Electric Co Ultrasonic bonding method
DE1295844B (de) * 1965-03-30 1969-05-22 Nielsen Verwendung einer Kupferlegierung fuer Fahrdraehte
FR1524436A (fr) * 1966-04-14 1968-05-10 Philips Nv Dispositif semi-conducteur et circuit équipé d'un tel dispositif
US3421888A (en) * 1966-08-12 1969-01-14 Calumet & Hecla Corp Copper alloy
FR1536483A (fr) * 1967-07-17 1968-08-16 British Insulated Callenders Procédé de production d'éléments en cuivre ayant une résistance mécanique élevée et une conductivité élevée
DD133285A1 (de) * 1977-09-05 1978-12-20 Ruediger Uhlmann Bonden eines drahtes mit einer anschlussflaeche
DE2752655A1 (de) * 1977-09-23 1979-06-07 Blaupunkt Werke Gmbh Elektronisches bauelement
JPS56150830A (en) * 1980-04-25 1981-11-21 Hitachi Ltd Semiconductor device
DE3104960A1 (de) * 1981-02-12 1982-08-26 W.C. Heraeus Gmbh, 6450 Hanau "feinstdraht"
NL184184C (nl) * 1981-03-20 1989-05-01 Philips Nv Werkwijze voor het aanbrengen van kontaktverhogingen op kontaktplaatsen van een electronische microketen.
JPS59155161A (ja) * 1983-02-23 1984-09-04 Daiichi Denko Kk 半導体素子のボンデイング用ワイヤ
FR2555813B1 (fr) * 1983-09-28 1986-06-20 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif

Also Published As

Publication number Publication date
FR2563380B1 (fr) 1987-02-27
IT8520336A0 (it) 1985-04-15
HK40390A (en) 1990-06-01
GB2157607A (en) 1985-10-30
MY102548A (en) 1992-07-31
JPS60223149A (ja) 1985-11-07
KR850008244A (ko) 1985-12-13
GB8503143D0 (en) 1985-03-13
HK40190A (en) 1990-06-01
DE3514253A1 (de) 1985-10-31
GB2157607B (en) 1988-09-28
FR2563380A1 (fr) 1985-10-25
FR2563381A1 (fr) 1985-10-25
IT1184445B (it) 1987-10-28

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