JPS6278861A - 半導体素子のボンデイング用銅線 - Google Patents

半導体素子のボンデイング用銅線

Info

Publication number
JPS6278861A
JPS6278861A JP60218415A JP21841585A JPS6278861A JP S6278861 A JPS6278861 A JP S6278861A JP 60218415 A JP60218415 A JP 60218415A JP 21841585 A JP21841585 A JP 21841585A JP S6278861 A JPS6278861 A JP S6278861A
Authority
JP
Japan
Prior art keywords
bonding
copper wire
hydrogen
copper
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60218415A
Other languages
English (en)
Inventor
Yasuhiko Yoshinaga
吉永　保彦
Takeshi Kujiraoka
鯨岡　毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP60218415A priority Critical patent/JPS6278861A/ja
Publication of JPS6278861A publication Critical patent/JPS6278861A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （産業上の利用分野） 本願は半導体のチップ電極と外部リード部とを接続する
ために使用する半導体素子のボンディング用銅線の発明
に関するものである。
（従来の技術とその問題点） 従来、ボンディング用線として、もっばら金（Ａｕ　）
線あるいはアルミニウム（Ａｌ）線が使用されているが
、最近、金線の代替として経済性に有利な銅線の使用が
検討されている。
一般にボンディング用線に要求される要素として、■引
張強ざが大きいこと、■高温強度が大きいこと、■塑性
変形による熱圧着及び超音波ボンディングが可能なこと
、■ボール形状が真球に近く且つ一定していること、■
ポンディング後の接合強度が大きいことが最少限必要で
ある。
しかるに、鋼線は金線に較べて引張強度が大きいものの
硬すぎてボンディングに供した場合にチップ割れ及びネ
ック切れ等を起す欠点がめった。
これは、銅線中に金属不純物の他にガス不純物、すなわ
ち水素及び酸素が約１０〜３０ｐｐｍ含有されているた
めであり、特に銅におけるこれら水素と酸素の含有量は
その硬さに大きな影響を与えている。
（発明が解決しようとする技術的課題）以上の問題を解
決するための本発明の技術的課題は、鋼中のガス不純物
、すなわち水素及び酸素の脱ガスをすることである。
（技術的課題を達成するための技術的手段）以上の技術
的課題を達成するための本発明の技術的手段は、高純度
銅中の水素及び酸素の合計含有量を！５　ｐｐｍ以下と
することでｈＬ　ｓｐｐｍを越えると硬度が増してボン
ディング時にシリコンチップを損傷し、使用が不能とな
る。
（発明の効果） 本発明は以上の様な構成にしたことによ）鋼線の硬度が
減少するためボール形状が真球に近くかつ安定し、ボン
ディング時におけるチップ割れ及びネック切れを防止す
ることが出来る。
（実施例） 本発明の実施品は、まず真空中において、ゾーンメルト
法によジインゴツトを作製し、更に不活性ガスを置換し
た雰囲気で引上げ法によって単結晶を製作する。
そして、９９．９９９〜９９．９９９９　ｗｔ％の高純
度鋼を従来周知の線引加工と中間熱処理とをくり返して
直径３０μのＣｕ線に仕上げたものである。
各試料のガス含有量を次表（１）　（２）に示す。
表（１） 表　（２） この結果、ボンディング用銅線中の水素及び酸素の含有
量の合計を５　ｐｐｍとするととＫよシ上記効果を有す
ることを確認することができた。

Claims (1)

    【特許請求の範囲】
  1. 高純度銅中の水素及び酸素の合計含有量を５ｐｐｍ以下
    としたことを特徴とする半導体素子のボンディング用銅
    線。
JP60218415A 1985-09-30 1985-09-30 半導体素子のボンデイング用銅線 Pending JPS6278861A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60218415A JPS6278861A (ja) 1985-09-30 1985-09-30 半導体素子のボンデイング用銅線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60218415A JPS6278861A (ja) 1985-09-30 1985-09-30 半導体素子のボンデイング用銅線

Publications (1)

Publication Number Publication Date
JPS6278861A true JPS6278861A (ja) 1987-04-11

Family

ID=16719553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60218415A Pending JPS6278861A (ja) 1985-09-30 1985-09-30 半導体素子のボンデイング用銅線

Country Status (1)

Country Link
JP (1) JPS6278861A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0336224A (ja) * 1989-06-30 1991-02-15 Kobe Steel Ltd 薄肉銅または薄肉銅合金材およびその製造方法
EP1145779A3 (en) * 2000-04-11 2002-07-17 Mitsubishi Materials Corporation Adhesion-resistant oxygen-free copper wire rod
US8004094B2 (en) 2006-08-31 2011-08-23 Nippon Steel Materials Co., Ltd. Copper alloy bonding wire for semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6222469A (ja) * 1985-07-22 1987-01-30 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6222469A (ja) * 1985-07-22 1987-01-30 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0336224A (ja) * 1989-06-30 1991-02-15 Kobe Steel Ltd 薄肉銅または薄肉銅合金材およびその製造方法
EP1145779A3 (en) * 2000-04-11 2002-07-17 Mitsubishi Materials Corporation Adhesion-resistant oxygen-free copper wire rod
US6682824B1 (en) 2000-04-11 2004-01-27 Mitsubishi Materials Corporation Adhesion-resistant oxygen-free roughly drawn copper wire and method and apparatus for making the same
US8004094B2 (en) 2006-08-31 2011-08-23 Nippon Steel Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
US8610291B2 (en) 2006-08-31 2013-12-17 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor device

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