JPS63211731A - ボンデイング線 - Google Patents

ボンデイング線

Info

Publication number
JPS63211731A
JPS63211731A JP62044744A JP4474487A JPS63211731A JP S63211731 A JPS63211731 A JP S63211731A JP 62044744 A JP62044744 A JP 62044744A JP 4474487 A JP4474487 A JP 4474487A JP S63211731 A JPS63211731 A JP S63211731A
Authority
JP
Japan
Prior art keywords
element group
ppm
wire
copper
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62044744A
Other languages
English (en)
Other versions
JPH084100B2 (ja
Inventor
Masanori Tokita
時田　正憲
Kenji Mori
健次 森
Takatoki Fukuda
福田　孝祝
Eiichi Fujimoto
栄一 藤本
Toshitake Otaki
大滝　俊武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tatsuta Electric Wire and Cable Co Ltd
Original Assignee
Tatsuta Electric Wire and Cable Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tatsuta Electric Wire and Cable Co Ltd filed Critical Tatsuta Electric Wire and Cable Co Ltd
Priority to JP62044744A priority Critical patent/JPH084100B2/ja
Priority to EP87119153A priority patent/EP0283587B1/en
Priority to DE8787119153T priority patent/DE3782162T2/de
Priority to KR1019870015233A priority patent/KR950010860B1/ko
Publication of JPS63211731A publication Critical patent/JPS63211731A/ja
Publication of JPH084100B2 publication Critical patent/JPH084100B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、トランジスター、ＩＣ５ＬＳＩなどの半導体
素子上の電極と外部リードとの間を接続するボンディン
グ線に関し、特に接続時に形成される銅ボールの硬さが
適当な半導体素子用ボンディング線に関する。
（従来技術） 従来、ケイ素半導体素子上の電極と外部リードとの間を
接続するボンディング線としては、純金の金細線や１％
Ｓｉアルミ合金細線が使用されている。しかしながら、
接続の信頼性および耐食性の問題から金細線が多く使用
されている。
その主な理由・は、接続時に形成される金ボールの硬さ
が適切であり、特に接合時の圧力によってケイ素半専体
素子を損傷しない柔らかさがあるため、半導体製品の接
続欠陥に起因する故障モードが大巾に回避され、信頼性
を向上させ得るためである。
ところが、金細線は極めて高価であると共に破断強度が
低いために、高速自動化接続に際し断線を生じやすいと
いう問題がある。一方、ケイ素半導体も大量生産化に入
り価格の低減が余儀なくされるに及んで、ボンディング
線としては金細線のように、接続時に形成されるボール
の硬さが適切で、接合時に半導体素子を損傷させず且つ
金細線より破断強度にすぐれた安価な代替金属によるも
のの出現が望まれている。
（発明が解決しようとする問題点） 本発明は、上記のかかる問題を解決することを目的とす
るもので、金細線より安価で破断強度にすぐれ、金細線
と同様な接合ができる半導体素子ボンディング線を提供
することにある。
（問題点を解決するための手段） 本発明者らは、上記の問題点を解決するために種々検討
を重ねた結果、特定の不純物元素とその星を規制する銅
素材をボンディング線の基材として用いると、接続時に
形成される銅ボールの硬さが適切になることを見出して
、本発明を完成させたものである。
本発明の構成は、Ａｇ、Ｓｉから成る第１元素群のいず
れもが５ｐｐｍ以下、８１％　Ｆｅ、Ｎ１％　Ｓｎ、　
Ｓｓｐ、　ｐｂなどから成る第２元素群のいずれもがｌ
ｐｐｍ以下、第３元素の酸素が５ｐｐｍ以下であって、
且つ第１元素群と第２元素群と酸素との和の総量が１０
ｐｐｍ以下である銅素材から成るボンディング線である
。
以下、本発明の構成について更に詳細に説明する。
Ａｇ、　Ｓｉからなる第１元素群のいずれもが５ｐｐｍ
以下であり、且つ第１元素群と第２元素群と酸素との総
和がｌｏｐｐｍ以下である場合、（１）第２元素群のい
ずれもがｌｐｐｍ以下であっても、０□が５ｐｐｍ以上
であるときは、０２の影響を受けて銅ボールの硬さが適
切でなく、好ましくない。
（２）０□が５ｐｐｍ以下であっても、第２元素群のい
ずれかがｌｐｐｍ以上であるとき、第２元素の影響を受
けて銅ボールの硬さが適切でなく、好ましくない。
（３）０□が５ｐｐｍ以上、第２元素群のいずれかがｌ
ｐｐｍ以上であるときは、０□と第２元素の影響を受け
て銅ボールの硬さが適切でなく、好ましくない。
Ａｇ、　Ｓｌから成る第１元素のいずれかが５ｐｐｍ以
上であり、且つ第１元素群と第２元素群と０□との総和
が１０ｐｐｍ以下である場合、 （４）０□が５ｐｐｍ以下、第２元素群のいずれもがｌ
ｐｐｍ以下であっても、第１元素と第２元素の影響を受
けて銅ボールの硬さが適切でなく、好ましくない。
（５）第２元素群のいずれもがｌｐｐｍ以下であっても
、０□が５ｐｐｍ以上であるときは、０□の影響を受け
て銅ボールの硬さが適切でなく、好ましくない。
（６）０□が５ｐｐｍ以下であっても、第２元素群のい
ずれかがｌｐｐｍ以下であるときは、第２元素の影響を
受けて銅ボールの硬さが適切でなく、好ましくない。
（７）　０２が５ｐｐｍ以上、第２元素群のいずれかが
ｌｐｐｍ以上であるときは、０２と第２元素の影響を受
けて銅ボールの硬さが適切でなく、好ましくない。
（実施例） 以下、実施例と比較例にもとづいて本発明を更に説明す
る。
内径２７ｍｍφ、長さ３００ｍｍの円筒状黒鉛ルツボに
銅純度が９９．９９９９重量％の高純度銅と第１元素群
と第２元素群の不純物元素を添加して、真空高周波溶解
炉で溶解し、酸素含有量の調整は真空度によって行ない
、前記黒鉛ルツボ中で溶解銅を冷却し凝固させて第１表
に示す不純物元素を含むそれぞれの銅鋳塊を得た。その
鋳塊の表面を８％切削した後、常温で伸線加工を行ない
最終線径を２５１１Ｉｆｆｌφの銅細線とした。引続い
て不活性ガス雰囲気中で銅細線の伸び値が１０％になる
ように連続焼鈍してボンディング線とした。
ボンディング線の評価方法は、１６ピンＩＣにボンディ
ング線を用いて接合した後、ＳｉＯ□上に形成されたア
ルミ電極を酸で溶解除去し、半導体素子の損傷の有無を
顕微鏡にて観察し、結果を第１表に示した。
第１表かられかるように、実施例１〜４は、本発明で説
明した第１元素群と第２元素群と酸素とが適量であるた
め、接合時に形成される銅ボールの硬さが適切となって
、半導体素子を損傷しないのでボンディング線として使
用できる。
比較例１，２，３．４．５．６．８は、第２元素群のい
ずれかが１　ｐｐｍ以上であるため、接合時に形成され
る銅ボールの硬さが適切でなくなり、半導体素子を損傷
させる恐れがあり、好ましくない。比較例７は、第１元
素群と第２元素群のいずれもが適量であるが、酸素量が
多いため接合時に形成される銅ボールの硬さが適切でな
（なり、半導体素子を損傷させる恐れがあるので好まし
くない。比較例９．１０は、第２元素群と酸素とがいず
れも適量であるが、第１元素群が多いために、接合時に
形成される銅ボールの硬さが適切でなくなり、半導体素
子を損傷させる恐れがあり、好ましくない。
（発明の効果） 以上、説明した如く、本発明にかかるボンディング線は
、高速自動ボンダーによる接合時に形成される銅ボール
の硬さが、従来の純金細線と同様に適切であるため、ケ
イ素半導体素子を損傷させることがないので、半導体製
品の接続における信頼性を維持できるものとなる。しか
も、金細線に較べて価格が安価であり、同一線径では金
細線よりも破断強度が大きい利点があるので、高速自動
ボンダーに対応でき、その実用性が大である。
特許出願人　タック電線株式会社 代理人　　　　弁理士　水　口　孝　−手続補正書　（
自発） 昭和６２年７月グ日

Claims (1)

    【特許請求の範囲】
  1. Ａｇ、Ｓｉから成る第１元素群のいずれもが５ｐｐｍ以
    下、Ｂｉ、Ｆｅ、Ｎｉ、Ｓｎ、Ｓ、Ｐ、ｐｂなどから成
    る第２元素群のいずれもが１ｐμｍ以下、第３元素の酸
    素が５ｐｐｍ以下であって、且つ第１元素群と第２元素
    群と酸素との和の総量が１０ｐｐｍ以下である銅をその
    基材として用いることを特徴とするボンディング線。
JP62044744A 1987-02-27 1987-02-27 ボンディング線 Expired - Fee Related JPH084100B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62044744A JPH084100B2 (ja) 1987-02-27 1987-02-27 ボンディング線
EP87119153A EP0283587B1 (en) 1987-02-27 1987-12-23 Bonding wire
DE8787119153T DE3782162T2 (de) 1987-02-27 1987-12-23 Bonddraht.
KR1019870015233A KR950010860B1 (ko) 1987-02-27 1987-12-29 본딩 선(bonding 線)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62044744A JPH084100B2 (ja) 1987-02-27 1987-02-27 ボンディング線

Publications (2)

Publication Number Publication Date
JPS63211731A true JPS63211731A (ja) 1988-09-02
JPH084100B2 JPH084100B2 (ja) 1996-01-17

Family

ID=12699952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62044744A Expired - Fee Related JPH084100B2 (ja) 1987-02-27 1987-02-27 ボンディング線

Country Status (4)

Country Link
EP (1) EP0283587B1 (ja)
JP (1) JPH084100B2 (ja)
KR (1) KR950010860B1 (ja)
DE (1) DE3782162T2 (ja)

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JP2008085320A (ja) * 2006-08-31 2008-04-10 Nippon Steel Materials Co Ltd 半導体装置用銅合金ボンディングワイヤ
WO2012120982A1 (ja) * 2011-03-07 2012-09-13 Jx日鉱日石金属株式会社 α線量が少ない銅又は銅合金及び銅又は銅合金を原料とするボンディングワイヤ
US10384314B2 (en) 2015-04-22 2019-08-20 Hitachi Metals, Ltd. Metal particle and method for producing the same, covered metal particle, and metal powder

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EP1954114A1 (en) * 2006-09-30 2008-08-06 Umicore AG & Co. KG Use of an adhesive composition for die-attaching high power semiconductors
JP2011091114A (ja) * 2009-10-20 2011-05-06 Nitto Denko Corp 配線回路基板およびその製法
SG190482A1 (en) * 2011-12-01 2013-06-28 Heraeus Materials Tech Gmbh Doped 4n copper wire for bonding in microelectronics device
EP3103567A4 (en) * 2014-02-04 2017-11-01 Senju Metal Industry Co., Ltd Method for producing metal ball, joining material, and metal ball
CN107723488B (zh) * 2017-10-09 2019-11-08 南理工泰兴智能制造研究院有限公司 一种耐氧化键合铜丝材料的制备方法
KR101884812B1 (ko) 2018-02-05 2018-08-07 전박 수술용 장갑

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Publication number Priority date Publication date Assignee Title
JPS60124959A (ja) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd 半導体素子結線用線

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GB2175009B (en) * 1985-03-27 1990-02-07 Mitsubishi Metal Corp Wire for bonding a semiconductor device and process for producing the same
GB2178761B (en) * 1985-03-29 1989-09-20 Mitsubishi Metal Corp Wire for bonding a semiconductor device

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JPS60124959A (ja) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd 半導体素子結線用線

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008085320A (ja) * 2006-08-31 2008-04-10 Nippon Steel Materials Co Ltd 半導体装置用銅合金ボンディングワイヤ
JP4691533B2 (ja) * 2006-08-31 2011-06-01 新日鉄マテリアルズ株式会社 半導体装置用銅合金ボンディングワイヤ
WO2012120982A1 (ja) * 2011-03-07 2012-09-13 Jx日鉱日石金属株式会社 α線量が少ない銅又は銅合金及び銅又は銅合金を原料とするボンディングワイヤ
CN103415633A (zh) * 2011-03-07 2013-11-27 吉坤日矿日石金属株式会社 α射线量少的铜或铜合金及以铜或铜合金作为原料的接合线
CN103415633B (zh) * 2011-03-07 2015-09-09 吉坤日矿日石金属株式会社 铜或铜合金、接合线、铜的制造方法、铜合金的制造方法及接合线的制造方法
PH12017501498A1 (en) * 2011-03-07 2019-01-14 Jx Nippon Mining & Metals Corp COPPER OR COPPER ALLOY REDUCED IN a-RAY EMISSION, AND BONDING WIRE OBTAINED FROM COPPER OR COPPER ALLOY AS RAW MATERIAL
US10384314B2 (en) 2015-04-22 2019-08-20 Hitachi Metals, Ltd. Metal particle and method for producing the same, covered metal particle, and metal powder

Also Published As

Publication number Publication date
EP0283587B1 (en) 1992-10-07
EP0283587A1 (en) 1988-09-28
DE3782162D1 (de) 1992-11-12
KR880010487A (ko) 1988-10-10
DE3782162T2 (de) 1993-02-11
JPH084100B2 (ja) 1996-01-17
KR950010860B1 (ko) 1995-09-25

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