JPH084100B2 - ボンディング線 - Google Patents

ボンディング線

Info

Publication number
JPH084100B2
JPH084100B2 JP62044744A JP4474487A JPH084100B2 JP H084100 B2 JPH084100 B2 JP H084100B2 JP 62044744 A JP62044744 A JP 62044744A JP 4474487 A JP4474487 A JP 4474487A JP H084100 B2 JPH084100 B2 JP H084100B2
Authority
JP
Japan
Prior art keywords
ppm
wire
copper
element group
hardness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62044744A
Other languages
English (en)
Other versions
JPS63211731A (ja
Inventor
正憲 時田
健次 森
孝祝 福田
栄一 藤本
俊武 大滝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tatsuta Electric Wire and Cable Co Ltd
Original Assignee
Tatsuta Electric Wire and Cable Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tatsuta Electric Wire and Cable Co Ltd filed Critical Tatsuta Electric Wire and Cable Co Ltd
Priority to JP62044744A priority Critical patent/JPH084100B2/ja
Priority to EP87119153A priority patent/EP0283587B1/en
Priority to DE8787119153T priority patent/DE3782162T2/de
Priority to KR1019870015233A priority patent/KR950010860B1/ko
Publication of JPS63211731A publication Critical patent/JPS63211731A/ja
Publication of JPH084100B2 publication Critical patent/JPH084100B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
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Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、トランジスター、IC、LSIなどの半導体素
子上の電極と外部リードとの間を接続するボンディング
線に関し、特に接続時に形成される銅ボールの硬さが適
当な半導体素子用ボンディング線に関する。
（従来の技術） 従来、ケイ素半導体素子上の電極と外部リードとの間
を接続するボンディング線としては、純金の金細線や１
％Siアルミ合金細線が使用されている。しかしながら、
接続の信頼性および耐食性の問題から金細線が多く使用
されている。その主な理由は、接続時に形成される金ボ
ールの硬さが適切であり、特に接合時の圧力によってケ
イ素半導体素子を損傷しない柔らかさがあるため、半導
体製品の接続欠陥に起因する故障モードが大巾に回避さ
れ、信頼性を向上させ得るためである。
ところが、金細線は極めて高価であると共に破断強度
が低いために、高速自動化接続に際し断線を生じやすい
という問題がある。一方、ケイ素半導体も大量生産化に
入り価格の低減が余儀なくされるに及んで、ボンディン
グ線としては金細線のように、接続時に形成されるボー
ルの硬さが適切で、接合時に半導体素子を損傷させず且
つ金細線より破断強度にすぐれた安価な代替金属による
ものの出現が望まれている。
（発明が解決しようとする問題点） 本発明は、上記のかかる問題を解決することを目的と
するもので、金細線より安価で破断強度にすぐれ、金細
線と同様な接合ができる半導体素子ボンディング線を提
供することにある。
（問題点を解決するための手段） 本発明者らは、上記の問題点を解決するために種々検
討を重ねた結果、特定の不純物元素とその量を規制する
銅素材をボンディング線の基材として用いると、接続時
に形成される銅ボールの硬さが適切になることを見出し
て、本発明を完成させたものである。
本発明の構成は、Ag、Siから成る第１元素群のいずれ
もが５乃至0.1ppmの範囲、Bi、Fe、Ni、Sn、Ｓ、Ｐ、Pb
から成る第２元素群のいずれもが1ppm乃至0.02ppmの範
囲、第３元素の酸素が５乃至2ppmの範囲であって、且つ
第１元素群と第２元素群と酸素との和の総量が10乃至5.
75ppmの範囲である銅素材から成るボンディング線であ
る。
以下、本発明の構成について更に詳細に説明する。
Ag、Siから成る第１元素群のいずれもが5ppm以下であ
り、且つ第１元素群と第２元素群と酸素との総和が10pp
m以下である場合、 （１）第２元素群のいずれもが1ppm以下であっても、O2
が5ppm以上であるときは、O2の影響を受けて銅ボールの
硬さが適切でなく、好ましくない。
（２）O2が5ppm以下であっても、第２元素群のいずれか
が1ppm以上であるとき、第２元素の影響を受けて銅ボー
ルの硬さが適切でなく、好ましくない。
（３）O2が5ppm以上、第２元素群のいずれかが1ppm以上
であるとき、O2と第２元素の影響を受けて銅ボールの硬
さが適切でなく、好ましくない。
Ag、Siから成る第１元素群のいずれかが5ppm以上であ
り、且つ第１元素群と第２元素群とO2との総和が10ppm
以下である場合、 （４）O2が5ppm以下、第２元素群のいずれもが1ppm以下
であっても、第１元素と第２元素の影響を受けて銅ボー
ルの硬さが適切でなく、好ましくない。
（５）第２元素群のいずれもが1ppm以下であっても、O2
が5ppm以上であるときは、O2の影響を受けて銅ボールの
硬さが適切でなく、好ましくない。
（６）O2が5ppm以下であっても、第２元素群のいずれか
が1ppm以上であるときは、第２元素の影響を受けて銅ボ
ールの硬さが適切でなく、好ましくない。
（７）O2が5ppm以上、第２元素群のいずれかが1ppm以上
であるときは、O2と第２元素の影響を受けて銅ボールの
硬さが適切でなく、好ましくない。
（実施例） 以下、実施例と比較例にもとづいて本発明を更に説明
する。
内径27mmφ、長さ300mmの円筒状黒鉛ルツボに銅純度
が99.9999重量％の高純度銅と第１元素群と第２元素群
の不純物元素を添加して、真空高周波溶解炉で溶解し、
酸素含有量の調整は真空度によって行ない、前記黒鉛ル
ツボ中で溶解銅を冷却し凝固させて第１表に示す不純物
元素を含むそれぞれの銅鋳塊を得た。その鋳塊の表面を
８％切削した後、常温で伸線加工を行ない最終線径を25
μｍφの銅細線とした。引続いて不活性ガス雰囲気中で
銅細線の伸び値が10％になるように連続焼鈍してボンデ
ィング線とした。ボンディング線の評価方法は、16ピン
ICにボンディング線を用いて接合した後、SiO2上に形成
されたアルミ電極を酸で溶解除去し、半導体素子の損傷
の有無を顕微鏡にて観察し、結果を第１表に示した。
第１表からわかるように、実施例１〜４は、本発明で
説明した第１元素群と第２元素群と酸素とが適量である
ため、接合時に形成される銅ボールの硬さが適切となっ
て、半導体素子を損傷しないのでボンディング線として
使用できる。比較例1,2,3,4,5,6,8は、第２元素群のい
ずれかが1ppm以上であるため、接合時に形成される銅ボ
ールの硬さが適切でなくなり、半導体素子を損傷させる
恐れがあり、好ましくない。比較例７は、第１元素群と
第２元素群のいずれもが適量であるが、酸素量が多いた
め接合時に形成される銅ボールの硬さが適切でなくな
り、半導体素子を損傷させる恐れがあるので好ましくな
い。比較例9,10は、第２元素群と酸素とがいずれも適量
であるが、第１元素群が多いために、接合時に形成され
る銅ボールの硬さが適切でなくなり、半導体素子を損傷
させる恐れがあり、好ましくない。
（発明の効果） 以上、説明した如く、本発明にかかるボンディング線
は、高速自動ボンダーによる接合時に形成される銅ボー
ルの硬さが、従来の純金細線と同様に適切であるため、
ケイ素半導体素子を損傷させることがないので、半導体
製品の接続における信頼性を維持できるものとなる。し
かも、金細線に較べて価格が安価であり、同一線径では
金細線よりも破断強度が大きい利点があるので、高速自
動ボンダーに対応でき、その実用性が大である。
───────────────────────────────────────────────────── フロントページの続き (72)発明者 福田 孝祝 大阪府東大阪市岩田町２丁目３番１号 タ ツタ電線株式会社内 (72)発明者 藤本 栄一 大阪府東大阪市岩田町２丁目３番１号 タ ツタ電線株式会社内 (72)発明者 大滝 俊武 大阪府東大阪市岩田町２丁目３番１号 タ ツタ電線株式会社内 (56)参考文献 特開 昭60−124959（ＪＰ，Ａ)

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】Ag、Siから成る第１元素群のいずれもが５
    乃至0.1ppmの範囲、Bi、Fe、Ni、Sn、Ｓ、Ｐ、Pbから成
    る第２元素群のいずれもが1ppm乃至0.02ppmの範囲、第
    ３元素の酸素が５乃至2ppmの範囲であって、且つ第１元
    素群と第２元素群と酸素との和の総量が10乃至5.75ppm
    の範囲である銅をその基材として用いることを特徴とす
    るボンディング線。
JP62044744A 1987-02-27 1987-02-27 ボンディング線 Expired - Fee Related JPH084100B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62044744A JPH084100B2 (ja) 1987-02-27 1987-02-27 ボンディング線
EP87119153A EP0283587B1 (en) 1987-02-27 1987-12-23 Bonding wire
DE8787119153T DE3782162T2 (de) 1987-02-27 1987-12-23 Bonddraht.
KR1019870015233A KR950010860B1 (ko) 1987-02-27 1987-12-29 본딩 선(bonding 線)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62044744A JPH084100B2 (ja) 1987-02-27 1987-02-27 ボンディング線

Publications (2)

Publication Number Publication Date
JPS63211731A JPS63211731A (ja) 1988-09-02
JPH084100B2 true JPH084100B2 (ja) 1996-01-17

Family

ID=12699952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62044744A Expired - Fee Related JPH084100B2 (ja) 1987-02-27 1987-02-27 ボンディング線

Country Status (4)

Country Link
EP (1) EP0283587B1 (ja)
JP (1) JPH084100B2 (ja)
KR (1) KR950010860B1 (ja)
DE (1) DE3782162T2 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4691533B2 (ja) * 2006-08-31 2011-06-01 新日鉄マテリアルズ株式会社 半導体装置用銅合金ボンディングワイヤ
EP1954114A1 (en) * 2006-09-30 2008-08-06 Umicore AG & Co. KG Use of an adhesive composition for die-attaching high power semiconductors
JP2011091114A (ja) * 2009-10-20 2011-05-06 Nitto Denko Corp 配線回路基板およびその製法
EP2684970A4 (en) * 2011-03-07 2015-03-04 Jx Nippon Mining & Metals Corp COPPER OR COPPER ALLOY HAVING REDUCED RAY EMISSION AND CONNECTING WIRE OBTAINED FROM COPPER OR COPPER ALLOY AS RAW MATERIAL
SG190482A1 (en) * 2011-12-01 2013-06-28 Heraeus Materials Tech Gmbh Doped 4n copper wire for bonding in microelectronics device
EP3103567A4 (en) * 2014-02-04 2017-11-01 Senju Metal Industry Co., Ltd Method for producing metal ball, joining material, and metal ball
WO2016170904A1 (ja) 2015-04-22 2016-10-27 日立金属株式会社 金属粒子およびその製造方法、被覆金属粒子、金属粉体
CN107723488B (zh) * 2017-10-09 2019-11-08 南理工泰兴智能制造研究院有限公司 一种耐氧化键合铜丝材料的制备方法
KR101884812B1 (ko) 2018-02-05 2018-08-07 전박 수술용 장갑

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124959A (ja) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd 半導体素子結線用線
GB2175009B (en) * 1985-03-27 1990-02-07 Mitsubishi Metal Corp Wire for bonding a semiconductor device and process for producing the same
GB2178761B (en) * 1985-03-29 1989-09-20 Mitsubishi Metal Corp Wire for bonding a semiconductor device

Also Published As

Publication number Publication date
EP0283587A1 (en) 1988-09-28
KR950010860B1 (ko) 1995-09-25
DE3782162T2 (de) 1993-02-11
JPS63211731A (ja) 1988-09-02
KR880010487A (ko) 1988-10-10
DE3782162D1 (de) 1992-11-12
EP0283587B1 (en) 1992-10-07

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