KR950010860B1 - 본딩 선(bonding 線) - Google Patents

본딩 선(bonding 線) Download PDF

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Publication number
KR950010860B1
KR950010860B1 KR1019870015233A KR870015233A KR950010860B1 KR 950010860 B1 KR950010860 B1 KR 950010860B1 KR 1019870015233 A KR1019870015233 A KR 1019870015233A KR 870015233 A KR870015233 A KR 870015233A KR 950010860 B1 KR950010860 B1 KR 950010860B1
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South Korea
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content
copper
impurity element
ppm
less
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KR1019870015233A
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English (en)
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KR880010487A (ko
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마사노리 도끼다
겐지 모리
다까노리 후꾸다
에이이찌 후지모또
도시다께 오오다끼
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다쓰다 덴센 가부시끼가이샤
오오이시 다께오
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Publication of KR880010487A publication Critical patent/KR880010487A/ko
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Publication of KR950010860B1 publication Critical patent/KR950010860B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Abstract

내용 없음.

Description

본딩 선(bonding 線)
본 발명은 트랜지스터, IC, LSI 등에 사용되고 있는 반도체 소자와 외부 리이드의 사이를 접속하는 본딩선에 관한것이며 특히 접속할때에 용융됨으로서 형성되는 동 보울(銅 ball)의 경도가 적당한 반도체 소자용의 본딩선에 관한 것이다.
종래의 규소 반도체 소자위의 전극과 외부 리이드와의 사이를 접속하는 본딩선으로서는 순금의 금 세선(細線)이나 1% si 함유 알루미늄 합금 세선이 알려져 있다.
그 중에서도 접속의 신뢰성 및 내식성의 점에서 금세선이 널리 사용되고 있다.
열 압착법에 의해서 결선하는 경우에 금 세선을 사용하게 되면, 접속 할때에 용융함으로서 형성되는 금보올의 경도가 적절하게 되며, 접합시의 압력으로 규소 반도체 소자에 손상을 주지 않으므로 반도체 제품의 접속 결함에 기인되는 고장을 대폭적으로 피할 수 있다.
그러나, 금 세선은 매우 고가이며, 또한 파단 강도가 낮으므로 고속자동화 접속시에 단선(斷線)이 되기 쉬운 문제가 있다.
그래서 용융에 의해서 형성되는 보올의 경도가 적절하며, 더구나 파단강도가 금 세선보다 뛰어나고 저렴한 본딩선으로서 99.99 중랑% 이상의 등으로 된 본딩선이 개발되었다.(일본특개소 60-124959, 일본특개소 62-2645, 일본특개소 62-22469)
그러나, 이들의 본딩선을 형성하는 고순의 동(銅) 중에는 동 보올의 경도에 중대한 영향을 미치는 불순물인 은, 규소, 비스무트(bismuth), 철, 니켈, 주석, 유황, 인, 납, 산소 등이 포함되어 있으며, 이 때문에 반도체 소자에 접속될때에 형성되는 동 보올이 단단해지며, 이 동 보올을 압착한 반도체 소자에 손상이 나타나지 않는다.
본 발명의 목적은 순도 99.99 중량% 이상의 동으로 된 본딩선으로서, 형성되는 동 보올의 경도가 금 보올에 가깝고 반도체 소자와의 접속에 적절한 본딩선을 제공하는데 있다.
전술한 목적은 동 보올의 경도에 중대한 영향을 미치는 특정된 불순물 원소의 함유량을 소정의 양 이하로 감소시킨동으로 된 본딩선에 의하여 달성된다.
본 발명의 본딩선은 순도 99.99 중량% 이상의 동으로서 은 및 규소로 된 제 1 의 불순물 원소군중의 어느 한 원소의 함유량도 5ppm 이하이며, 비스무트, 철, 니켈, 주석, 유황, 인 및 납으로 된 제 2 의 불순물 원소군중의 어느 한 원소의 함유량도 1ppm 이하이며, 제 3 의 불순물인 산소의 함유량도 5ppm 이하이며, 또한, 제 1 의 불순물 원소의 함유량과 제 2 의 불순물 원소의 함유량과 산소의 함유량의 총 합계가 10ppm 이하인 동으로 된 것이다.
또한, 본 발명의 본딩선은 금 세선보다 파단 강도가 뛰어난 것이다.
본 발명의 본딩선은 순도 99.99 중량% 이상의 동으로 된 것으로서 동 보올의 경도에 중대한 영향을 미치는 불순물인 은, 규소, 비스무트, 철, 니켈, 주석, 유황, 인, 납, 산소가 소정의 양 이하로 포함되어 있는 동으로 되어 있다.
이들의 불순물은 형성된 동 보올의 경도에 미치는 영향력의 차이에 의해서 은 및 규소로 된 제 1 의 불순물 원소군과, 비스무트, 철, 니켈, 주석, 유황, 인 및 납으로 된 제 2 의 불순물 원소군과, 제 3 의 불순물인 산소로 나뉘어진다.
이들의 불순물은 제각기 소정량 이하의 함유량인 동시에 그것들의 총 합계도 일정량 이하인 것이 필요하게 되며, 그것을 충족시키지 않을 경우에는 동 보올이 단단하게 되고 반도체 소자와의 접속도 적합하지 않게 된다.
구체적으로 아래와 같은 경우가 있다.
(1) 제 1 의 불순물 원소군중의 어느 한 원소의 함유량도 5ppm 이하이며, 또한, 제 1 의 불순물 원소의 함유량과, 제 2 의 불순물 원소의 함유량과, 산소의 함유량의 총 합계가 10ppm 이하일 경우,
① 제 2 의 불순물 원소군중의 어느 한 원소의 함유량이 1ppm 이하이더라도 산소의 함유량이 5ppm 이상일때는 산소의 영향을 받아서 동 보올의 경도가 적절하지 않게 된다.
② 산소의 함유량이 5ppm 이하이더라도 제 2 의 불순물 원소군중의 어느 한 원소의 함유량이 1ppm 이상일때는, 제 2 의 불순물 원소의 영향을 받아서 동 보올의 경도가 적절하지 않게 된다.
③ 산소의 함유량이 5ppm 이상이며, 제 2 의 불순물 원소군중의 어느 한 원소의 함유량이 1ppm 이상일때에는, 산소와 제 2 의 불순물 원소의 영향을 받아서 동 보올의 경도가 적절하지 않게 된다.
(2) 제 1 의 불순물 원소군중의 어느 한 원소의 함유량이 5ppm 이상이며, 또한 제 1 의 불순물 원소의 함유량과, 제 2 의 불순물 원소의 함유량과, 산소의 함유량의 총 합계가 10ppm 이하일 경우, 산소의 함유량이 5ppm 이하에서 제 2 의 불순물 원소군중의 어느 한 원소의 함유량이 1ppm 이하이더라도 제 1 의 불순물 원소의 영향을 받아서 동 보올의 경도가 적절하지 않게 된다.
본 발명에 관한 본딩선은 동 보올의 경도에 중대한 영향을 미치는 특정한 불순물의 함유량이 소정의 양이하의 동으로 된것이며, 용융에 의해서 형성되는 동의 보올의 경도가 종래의 금세선의 금 보올에 가까우므로, 접속시에 규소 반도체 소자를 손상시키는 일이 없다.
더구나, 금세선에 비해서 저렴한 동시에 동일한 길이의 지름에서는 금세선보다도 파단(破斷) 강도가 크므로 고속자동 접착기에 의해서 접속되어 매우 실용적이다.
아래에 실시예와 비교예에 따라서 본 발명을 더욱 상세하게 설명하겠으나 본 발명은 그와 같은 실시예에만 한정되는 것은 아니다.
[실시예 1-4]
무산소동을 원료로서 사용하여, 이것을 전해법(電解法) 또는 대역(帶域) 용융법에 의해서 반복하여 정제한 다음, 또다시 진공 용해법에 의해서 표 1 에 나타난 조성의 동의 주물 덩어리를 얻었다.
이 주물덩어리의 표면을 8% 절삭(切削)한 후, 상온에서 압연·신선(壓延·伸線) 가공을 실시하여, 최종의 선의 지름이 25㎛
Figure kpo00001
동 세선으로 하였다.
계속해서 불활성 가스속에서 동 세선의 늘어나는 값이 10%가 되도록 연속 어니어링하여 본딩선으로 하였다.
이 본딩선을 쌍극성(雙極性)의 전극에 고속자동 접착기를 사용해서 일단 접속한 후, 본딩선과 규소 산화막위의 알루미늄 전극을 산(酸)으로 용해 제거하고 규소 산화막과 규소 반도체로 된 반도체 소자의 손상의 유무를 현미경으로 관찰하였다.
그 결과를 표 1 에 병기하였다.
[비교예 1-10]
내부 지름 27mm
Figure kpo00002
, 길이 300mm의 원통형 흑연 도가니에 동의 순도가 99.9999 중량%의 고순도의 동과 제 1 의 불순물 원소를 넣고, 진공 고주파 용해로 진공도를 조정하면서 용해한 다음, 전술한 흑연 도가니속에서 용해동을 냉각 응고시켜서 표 1 에 나타나는 조성의 동의 주물 덩어리를 얻었다.
이 동의 주물 덩어리를 실시예와 동일하게 가공해서 본딩선을 형성하였다.
형성한 본딩선을 실시예와 동일하게 반도체 소자에 접속한 다음, 반도체 소자의 손상 유무를 관찰하였다.
그 결과를 표 1 에 병기하였다.
Figure kpo00003
표 1 에 있어서, 규소 반도체의 손상 및 규소 산화막의 손상에 관해서는 균열이 관찰되지 않은 것을 「없음」으로 하고, 균열이 관찰 된것을 「있음」으로 하였다.
표 1 에서 알 수 있듯이 실시예 1-4의 본딩선은 본 발명에서 설명한 제 1 의 불순물 원소의 함유량과, 제 2 의 불순물 원소의 함유량과, 산소의 함유량이 소정량 이하이며, 또한 그것들의 총합계도 소정의 양 이하이므로, 접속시에 형성되는 동 보올의 경도가 적절하며, 반도체 소자에 손상을 주지 않았다.
비교예 1, 2, 3, 4, 5, 6, 8의 본딩선은 제 2 의 불순물 원소군중의 어느 한 원소의 함유량이 1ppm 이상이므로 접속시에 형성되는 동 보올이 단단하며, 반도체 소자에 손상을 주었다.
비교예 7 은 제 1 의 불순물 원소군과 제 2 의 불순물 원소군중의 어느 한 원소의 함유량도 소정양의 이하이나, 산소함유량이 많으므로 접속시에 형성되는 동 보올이 단단하게 되며 반도체 소자에 손상을 주었다.
비교예 9, 10은 제 2 의 불순물 원소의 함유량과 산소함유량이 어느것이나 소정량 이하이나 제 1 의 불순물 원소의 함유량이 많으므로 접속시에 형성되는 동 보올이 단단하여 반도체 소자에 손상을 주었다.

Claims (1)

  1. 순도 99.99 중량% 이상의 동으로 된 본딩선으로서, 은 및 규소로 된 제 1 의 불순물 원소군중의 어느 한 원소의 함유량도 5ppm 이하이며, 비스무트, 철, 니켈, 주석, 유황, 인 및 납으로 된 제 2 의 불순물 원소군중의 어느 한 원소의 함유량도 1ppm 이하이며, 제 3 의 불순물인 산소의 함유량도 5ppm 이하이며, 또한 제 1 의 불순물 원소의 함유량과 제 2 의 불순물 원소의 함유량과 산소의 함유량의 총 합계가 10ppm 이하인 동으로 된 것을 특징으로 하는 본딩 선.
KR1019870015233A 1987-02-27 1987-12-29 본딩 선(bonding 線) KR950010860B1 (ko)

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JP4691533B2 (ja) * 2006-08-31 2011-06-01 新日鉄マテリアルズ株式会社 半導体装置用銅合金ボンディングワイヤ
EP1954114A1 (en) * 2006-09-30 2008-08-06 Umicore AG & Co. KG Use of an adhesive composition for die-attaching high power semiconductors
JP2011091114A (ja) * 2009-10-20 2011-05-06 Nitto Denko Corp 配線回路基板およびその製法
WO2012120982A1 (ja) * 2011-03-07 2012-09-13 Jx日鉱日石金属株式会社 α線量が少ない銅又は銅合金及び銅又は銅合金を原料とするボンディングワイヤ
SG190482A1 (en) * 2011-12-01 2013-06-28 Heraeus Materials Tech Gmbh Doped 4n copper wire for bonding in microelectronics device
KR20160110521A (ko) * 2014-02-04 2016-09-21 센주긴조쿠고교 가부시키가이샤 금속구의 제조 방법, 접합 재료 및 금속구
CN106257978B (zh) 2015-04-22 2019-09-24 日立金属株式会社 金属颗粒以及它的制造方法、包覆金属颗粒、金属粉体
CN107723488B (zh) * 2017-10-09 2019-11-08 南理工泰兴智能制造研究院有限公司 一种耐氧化键合铜丝材料的制备方法

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JPH084100B2 (ja) 1996-01-17
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