JPH05132729A - 銅ボンデイングワイヤ - Google Patents

銅ボンデイングワイヤ

Info

Publication number
JPH05132729A
JPH05132729A JP3321222A JP32122291A JPH05132729A JP H05132729 A JPH05132729 A JP H05132729A JP 3321222 A JP3321222 A JP 3321222A JP 32122291 A JP32122291 A JP 32122291A JP H05132729 A JPH05132729 A JP H05132729A
Authority
JP
Japan
Prior art keywords
bonding
wire
copper
alkaline earth
earth element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3321222A
Other languages
English (en)
Inventor
Koichi Tamura
幸一 田村
Takao Ichikawa
貴朗 市川
Kuniaki Kimoto
国明 紀本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP3321222A priority Critical patent/JPH05132729A/ja
Publication of JPH05132729A publication Critical patent/JPH05132729A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/43985—Methods of manufacturing wire connectors involving a specific sequence of method steps
    • H01L2224/43986—Methods of manufacturing wire connectors involving a specific sequence of method steps with repetition of the same manufacturing step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/4851—Morphology of the connecting portion, e.g. grain size distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48817—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48824—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85065—Composition of the atmosphere being reducing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01056—Barium [Ba]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01206—6N purity grades, i.e. 99.9999%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Abstract

(57)【要約】 【目的】 本発明の目的は、Ｃｕ材の結晶粒の粗大化を
抑制し、良好なワイヤボンディングを行えるようにした
銅ボンディングワイヤを提供することにある。 【構成】 本発明の銅ボンディングワイヤは、電解精製
によってその純度を99.9999 重量％に生成された電着材
を使用し、これに予め溶製したＣｕ−1.5 ＢａおよびＣ
ｕ−2.3 Ｚｒ合金を所定の組成となるように調整配合
し、10-6Torrの真空溶解によって20×30( 径×長さ) mm
2 のインゴットに溶製し、このインゴットの表面を面削
した後に直径1.0mm まで伸線加工して300 ℃で１時間の
焼鈍処理を施した後、さらに直径0.03mmまで伸線加工を
行い、250 ℃で毎分10ｍの走行調質焼鈍を行った後にス
プール巻きするようにした。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は銅ボンディングワイヤに
関し、特に、半導体素子のワイヤボンディングに使用さ
れる銅ボンディングワイヤに関する。
【０００２】
【従来の技術】従来より半導体素子の電極チップと外部
リードを接続するボンディングワイヤには、Ａｕ線やＳ
ｉを含有するアルミニウム合金線が使用されており、特
に樹脂モールドタイプの半導体素子では接続の信頼性お
よび工程上の問題からＡｕ線が多用されている。
【０００３】Ａｕは優れた導電性を有する反面、単位当
たりのコストが高価であり、また、高速でボンディング
を行う際に張力不足から断線を生じることがある。この
ため、Ａｕに比較して安価であり、強度特性に優れた代
替材料としてＣｕを素材とするボンディングワイヤの採
用が提案されている。
【０００４】Ｃｕを素材とするボンディングワイヤは、
Ａｕ線に比較して引張強度が大きく、伸線加工性が良好
であるのでワイヤボンディングの高速化に対応でき、近
年の高集積化に伴う半導体素子の多ピン化に対応するこ
とができる。従来のボンディングワイヤに使用されるＣ
ｕ材として、電解精製等により不純物を除去して純度を
99.9999 重量％の高純度に精製されたＣｕを使用するこ
とが検討されている。
【０００５】
【発明が解決しようとする手段】しかし、この高純度の
Ｃｕを使用すると、ボール形成時の熱影響によってボー
ルネック部の結晶粒が粗大化成長しやすくなるため、疲
労寿命の低下を招いたり、ボールボンディングからセカ
ンドボンディングに移行する際にネック部の座屈変形を
生じて良好なワイヤボンディングが行われないという問
題がある。従って、本発明の目的はＣｕ材の結晶粒の粗
大化を抑制し、良好なワイヤボンディングを行なえる銅
ボンディングワイヤを提供することにある。
【０００６】
【課題を解決するための手段】本発明はＣｕ材の結晶粒
の粗大化を抑制し、良好なワイヤボンディングを行なえ
るようにするため、純度が99.9999 重量％以上のＣｕ材
を使用し、これに少なくとも１種のアルカリ土類元素あ
るいはＺｒを0.0002〜0.002 重量％添加するようにした
銅ボンディングワイヤを提供する。
【０００７】
【作用】本発明の銅ボンディングワイヤは、高純度のＣ
ｕ材にアルカリ土類元素あるいはＺｒを所定の重量％で
添加して銅結晶間に作用させ、粒子を微細化させるので
結晶粒の結合が密になり、粗大化成長を抑制する。
【０００８】
【実施例１〜４】以下、本発明の銅ボンディングワイヤ
詳細に説明する。素材として使用されるＣｕ材は、電解
精製によってその純度を99.9999 重量％に生成された電
着材を使用し、これに予め溶製したＣｕ−1.5 ％Ｂａお
よびＣｕ−2.3 ％Ｚｒ合金を第１表の実施例１〜４の組
成となるように調整配合し、10-6Torrの真空溶解によっ
て 20 ×30( 径×長さ）mm2 のインゴットに溶製する。
【０００９】この溶製されたインゴットの表面を面削し
た後に直径1.0mmまで伸線加工して300 ℃で１時間の焼
鈍処理を施した後、さらに直径0.03mmまで伸線加工を行
い、250 ℃で毎分10ｍの走行調質焼鈍を行った後にスプ
ール巻きにする。
【００１０】以上のようにして形成された実施例１〜４
の銅ボンディングワイヤについての機械的特性（引張強
度，伸び，ボール硬さ）を評価した結果を表１に示す。
同時に、本発明の組成の範囲外の比較例１〜５の組成を
有する銅ボンディングワイヤについて同様の試験を行っ
て特性評価した。なお、添加する元素の添加量はＧＤＭ
Ｓ分析値によるものであり、重量％で示される。
【００１１】 注） 機械的特性は以下の単位で示される。 引張強度 ： Kgf/mm2 伸び ： ％ ボール硬さ ： Ｈｖ 表１からわかるように、Ｃｕ材に添加するアルカリ土類
元素あるいはＺｒの重量％を増加させることによって、
引張強度およびボール硬さが向上する反面、伸び特性が
低下する傾向が見られる。
【００１２】即ち、添加する元素が0.0002重量％以下の
場合では、Ｃｕ材の結晶粒が成長して伸び特性が良好と
なるがボール硬さが低下するので、ボール形成時に熱影
響によりボールネック部の座屈変形を生じやすくなる。
また、添加する元素が0.002 重量％以上の場合では、Ｃ
ｕ材の結晶粒が微細化して結晶間の結合が密になること
からボール硬さが向上するが、伸び特性が低下するので
ボンディング時のワイヤのしなやかさが失われる。上記
の結果に基づき、銅ボンディングワイヤとしての良好な
特性を得られる元素の添加重量％は0.0002〜0.002 の範
囲に集約されることがわかる。
【００１３】また、アルカリ土類元素のＣａ，Ｓｒ，Ｂ
ａ，Ｃｓは固溶度が小さく酸素との親和性が大きいので
酸化物を生じやすいが、インゴットの形成時に生じる酸
化物の比重は比較的小さいことから、溶銅中で生じた酸
化物がインゴット表面に浮上し易く、このため除去する
ことが容易である。
【００１４】さらに、本発明の実施例１〜４および比較
例１〜５の銅ボンディングワイヤについて、Ｃｕ用ボン
ダーによりキャピラリー部へＡｒ＋10％Ｈ2 混合ガス雰
囲気中でアーク放電させてボールを形成した後に、1.2
μｍ厚のＡｌ電極膜を有するＳｉチップを用いて、基板
温度300 ℃でＮ2 ＋10％Ｈ2 混合ガスを吹きつけながら
1.23Ｎの荷重を負荷させて超音波熱圧着させるボンディ
ング実験を行った。このボンディング後の評価結果を表
２に示す。
【００１５】 注） １）伸線加工性 良好 ○，断線有
△ ２）素子損傷 有り ○，無し × ３）ループ特性 良好 ○，不良 × ４）ボンディング強度 良好 ○ 弱い △ ５）結晶粒成長 小 ○，中 △，大 × 表２からわかるように、実施例１〜４においては全ての
項目について比較例１〜５より優れたボンディング特性
を示し、特に、素子の損傷およびループ特性については
著しくボンディング特性が改善されていることがわか
る。
【００１６】
【発明の効果】以上説明した通り、本発明の銅ボンディ
ングワイヤによると、純度が99.9999重量％以上の銅材
を使用し、これに少なくとも１種のアルカリ土類元素あ
るいはＺｒを0.0002〜0.002 重量％含有するようにした
ため、Ｃｕ材の結晶粒の粗大化を抑制し、良好なワイヤ
ボンディングを行なえるようにすることができる。

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】 純度99.9999 重量％以上の銅材を使用
    し、これに少なくとも１種のアルカリ土類元素あるいは
    Ｚｒを0.0002〜0.002 重量％添加して成ることを特徴と
    する銅ボンディングワイヤ。
JP3321222A 1991-11-08 1991-11-08 銅ボンデイングワイヤ Pending JPH05132729A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3321222A JPH05132729A (ja) 1991-11-08 1991-11-08 銅ボンデイングワイヤ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3321222A JPH05132729A (ja) 1991-11-08 1991-11-08 銅ボンデイングワイヤ

Publications (1)

Publication Number Publication Date
JPH05132729A true JPH05132729A (ja) 1993-05-28

Family

ID=18130172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3321222A Pending JPH05132729A (ja) 1991-11-08 1991-11-08 銅ボンデイングワイヤ

Country Status (1)

Country Link
JP (1) JPH05132729A (ja)

Similar Documents

Publication Publication Date Title
US6063213A (en) High-purity hard gold alloy and method of manufacturing same
JPH0786325A (ja) 電子機器用銅線
JP2922388B2 (ja) ボンディング用金合金細線
JPH084100B2 (ja) ボンディング線
JP3573321B2 (ja) Ａｕボンディングワイヤー
JPH05132729A (ja) 銅ボンデイングワイヤ
JP3143755B2 (ja) ボンディング用金合金細線
JPH0726167B2 (ja) 半導体装置のボンデイングワイヤ用Ａｕ合金極細線
JP2003059964A (ja) ボンディングワイヤ及びその製造方法
JP3810200B2 (ja) ワイヤボンディング用金合金線
JP2745065B2 (ja) 半導体素子用ボンディングワイヤ
JPH07335686A (ja) ボンディング用金合金細線
JP3235198B2 (ja) ボンディングワイヤ
JP2779683B2 (ja) 半導体素子用ボンディングワイヤ
JP3059314B2 (ja) ボンディング用金合金細線
JP2689773B2 (ja) ボンデイングワイヤー
JP2766706B2 (ja) ボンデイングワイヤー
JPS62170448A (ja) アルミニウム極細線
JPH04247630A (ja) 銅ボンディングワイヤ
JP3426397B2 (ja) 半導体素子用金合金細線
JP2003023030A (ja) ボンディングワイヤ及びその製造方法
JP2830520B2 (ja) 半導体装置用ボンディングワイヤの製造方法
JPH06145842A (ja) ボンディング用金合金細線
JP2661247B2 (ja) 半導体素子ボンディング用金合金細線
JPH06112252A (ja) 半導体素子用Ｐｔ合金極細線