JPH06112255A - 半導体素子用ボンディング線 - Google Patents

半導体素子用ボンディング線

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Publication number
JPH06112255A
JPH06112255A JP4262219A JP26221992A JPH06112255A JP H06112255 A JPH06112255 A JP H06112255A JP 4262219 A JP4262219 A JP 4262219A JP 26221992 A JP26221992 A JP 26221992A JP H06112255 A JPH06112255 A JP H06112255A
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JP
Japan
Prior art keywords
added
wire
bonding
purity
amount
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Granted
Application number
JP4262219A
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JP3090549B2 (ja
Inventor
Kazumitsu Itabashi
一光 板橋
Takeshi Kujiraoka
毅 鯨岡
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Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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Priority to JP04262219A priority Critical patent/JP3090549B2/ja
Publication of JPH06112255A publication Critical patent/JPH06112255A/ja
Application granted granted Critical
Publication of JP3090549B2 publication Critical patent/JP3090549B2/ja
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Expired - Lifetime legal-status Critical Current

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Abstract

(57)【要約】 【目的】Ｐｄの添加によりＡｕ線の強度向上を図ると同
時に、ボンディング時における低ループ化を実現して、
ＬＳＩパッケージの小型，軽量化に対応するに極めて有
用な半導体素子用ボンディング線を提供する。 【構成】高純度Ａｕに、Ｐｄを１〜40wt％含有せしめる
と共に、Ｓｃ，Ｙ，希土類元素の中から少なくとも１種
を0.0001〜0.05wt％含有せしめ、さらにＢｅ，Ｃａ，Ｇ
ｅ，Ｎｉ，Ｆｅ，Ｃｏ，Ａｇの中から１種以上を0.0001
〜0.05wt％含有せしめて溶解鋳造し、次に溝ロール加工
を施し、その途中で焼なまし処理を施した後に線引加工
し、更に十分な応力除去を行って線径25μｍの母線を成
形した。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、半導体素子のチップ電
極と基板上の外部リードとを接続するために用いられる
半導体素子用ボンディングＡｕ線、特にワイヤボンディ
ング法及びバンプ接続法に好適なものに関する。
【０００２】
【従来の技術】従来から、例えばキャピラリーの先端に
垂下せしめたＡｕ線の先端を電気トーチにより溶融させ
てボールを形成し、このボールをチップ上のＡｌ又はＡ
ｌ合金からなる電極に圧着・切断してバンプ電極を形成
するバンプ接続法や、前記ボールをチップ電極に圧着，
接合せしめた後、ループ状に外部リードまで導いて該外
部リードに圧着・切断することにより、チップ電極と外
部リードを接続させるワイヤボンディング法が知られて
いる。
【０００３】また、この種ボンディングに用いるに有用
なＡｕ線として、特公昭６２−２３４５５号，特開平２
−９１９４４号に開示されるように、Ｐｄと、Ｂｅ，Ｃ
ａ，Ｇｅ，Ｌａ，Ｃｅの中から１種以上とを添加してな
るものがある。
【０００４】
【発明が解決しようとする課題】上記従来のボンディン
グ線では、前記各元素の添加によってＡｕ線における強
度の向上は図れるものの、ボール形成時に熱影響を受け
て再結晶する領域が比較的長くなる結果、ボンディング
時におけるループ高さが高くなる。よって、近年におけ
るＬＳＩパッケージの小型，軽量化に伴う低ループ（例
えば１５０μｍ以下）の要求を満足し得るものではなか
った。
【０００５】本発明はこのような従来事情に鑑みてなさ
れたものであり、その目的とするところは、Ｐｄの添加
によりＡｕ線の強度向上を図ると同時に、ループ高さを
低くできるＡｕ線を提供することにある。
【０００６】
【課題を解決するための手段】以上の目的を達成するた
めに、本発明の半導体素子用ボンディング線は、高純度
Ａｕに、高純度Ｐｄを１〜４０wt％含有せしめると共
に、Ｓｃ，Ｙ，希土類元素の中から１種以上を０．００
０１〜０．０５wt％含有せしめてなることを特徴とす
る。
【０００７】また、後述の理由から、前記の配合に加え
て、Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆｅ，Ｃｏ，Ａｇの中か
ら１種以上を０．０００１〜０．０５wt％含有せしめる
ことが有用である。
【０００８】
【作用】上記の構成によれば、Ｐｄの所定量の添加によ
ってＡｕ線の破断強度が向上すると同時に、Ｓｃ，Ｙ，
希土類元素の中から少なくとも１種を同時添加すること
でボール形成時の再結晶領域を短くでき、ボンディング
の際のループ高さが低くなる。
【０００９】また、Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆｅ，Ｃ
ｏ，Ａｇの同時添加によって、前記破断強度をさらに高
レベルなものにすると共に、ループ高さをより低くし得
る。
【００１０】しかし乍ら、Ｐｄの添加量が１wt％未満で
は満足な破断強度が得られず、Ｐｄの添加量が４０wt％
を越えると伸線加工が困難になるので好ましくない。
【００１１】また、Ｓｃ，Ｙ，希土類元素の添加量が
０．０００１wt％未満だと前述の低ループ効果を得られ
ず、また、これら添加元素の添加量が０．０５wt％を越
えると、ボール形成時におけるボール形状が安定せず、
ボールとチップ電極との接合強度が低下してＡ点剥がれ
の発生率が高くなる。
【００１２】さらに、Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆｅ，
Ｃｏ，Ａｇの添加量が０．０００１wt％未満では上記の
効果を得られず、同添加量が０．０５wt％を越えるとボ
ール形成時におけるボール形状が安定せず、ボールとチ
ップ電極との接合強度が低下するので好ましくない。
【００１３】従って、Ｐｄの添加量を１〜４０wt％の範
囲に、Ｓｃ，Ｙ，希土類元素の添加量を０．０００１〜
０．０５wt％の範囲に、Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆ
ｅ，Ｃｏ，Ａｇの添加量を０．０００１〜０．０５wt％
の範囲に、夫々設定した。
【００１４】
【実施例】以下、具体的な実施例と比較例について説明
する。高純度Ａｕ（９９．９９％以上）に、Ｐｄ，Ｓ
ｃ，Ｙ，Ｌａ，Ｃｅ、Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆｅ，
Ｃｏ，Ａｇを表１中に示す含有率に基づき添加して溶解
鋳造し、次に溝ロール加工を施し、その途中で焼なまし
処理を施した後に線引加工で線径２５μｍの母線に成形
し、更に十分な応力除去を行うことにより各試料とし
た。
【００１５】表１中の試料Ｎｏ．１〜８は高純度Ａｕに
Ｐｄ（以下、添加元素Ｉという）を添加すると共に、Ｓ
ｃ，Ｙ，希土類元素（以下、添加元素IIという）の中か
ら少なくとも１種を添加した本発明実施品である。ま
た、試料Ｎｏ．９〜１２は、前記の配合に加えてさらに
Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆｅ，Ｃｏ，Ａｇ（以下、添
加元素III という）の中から少くとも１種を同時添加し
た本発明実施品である。
【００１６】また、表１中の試料Ｎｏ．１３，１４は高
純度ＡｕにＰｄのみを添加した比較品、試料Ｎｏ．１５
〜１８は高純度ＡｕにＰｄを添加すると共に、上記添加
元素III の代表としてＢｅ，Ｃａ，Ｇｅを選んで１種ま
たは２種添加し、添加元素IIを添加しない比較品、試料
ＮＯ．１９は高純度Ａｕに何も添加しない比較品であ
る。
【００１７】尚、表１では希土類元素の代表としてＥ
ｕ，Ｇｄ，Ｄｙを選んだが、これ以外の希土類元素はＥ
ｕ，Ｇｄ，Ｄｙと同質性のため省略した。
【００１８】上記のようにして作製した各試料を熱処理
により所定の伸び率に合わせた後、破断強度及びループ
高さを測定した。
【００１９】破断強度は、各試料を標点間距離１００ｍ
ｍにて引張速度１０ｍｍ／ｍｉｎで引張り試験を行った
時の破断荷重を測定した。
【００２０】ループ高さは、各試料をＡｌ薄膜（０．８
μｍ厚）のチップ電極上に所定条件にてボンディングし
た後、測定顕微鏡にて測定した。これらの結果も表１中
に示す。
【００２１】
【表１】
【００２２】而して、試料Ｎｏ．１〜８の測定結果か
ら、高純度Ａｕに添加元素Ｉ（Ｐｄ）を１〜４０wt％の
範囲内で添加すると共に、添加元素II（Ｓｃ，Ｙ，希土
類元素）の中から夫々少なくとも１種を同時添加すれ
ば、破断強度の改善が得られると同時に、ループ高さを
低くできることが確認できた。
【００２３】また、試料Ｎｏ．９〜１２の測定結果か
ら、上記の配合に加えて添加元素III（Ｂｅ，Ｃａ，Ｇ
ｅ，Ｎｉ，Ｆｅ，Ｃｏ，Ａｇ）の中から夫々少なくとも
１種を同時添加すれば、より高レベルな破断強度が得ら
れると同時に、ループ高さをさらに低くできることが確
認できた。
【００２４】また、試料Ｎｏ．１３，１４の測定結果、
並びに試料Ｎｏ．１５〜１８の測定結果から、Ｐｄのみ
の添加、若しくはＰｄと添加元素III の添加では、所定
の破断強度は得られるものの、ループ高さが高くなるこ
とが確認できた。さらに、試料Ｎｏ．１９の測定結果か
ら、Ｐｄの添加がない場合は所定の破断強度が得られな
いと共に、ループ高さが極めて高いことが確認できた。
【００２５】
【発明の効果】本発明に係る半導体素子用ボンディング
線は以上説明したように構成したので、Ｐｄの添加によ
る破断強度の向上効果はそのまま維持しつつ、その添加
量を所定の範囲内に限定すると共にＳｃ，Ｙ，希土類元
素を同時添加することで、ボンディング時におけるルー
プ高さを低くし得た。
【００２６】従って、ボンディング後における所定のワ
イヤ強度を得ると同時に低ループ化を実現して、ＬＳＩ
パッケージの小型，軽量化に対応するに極めて有用な半
導体素子用ボンディング線を提供できた。
【００２７】さらに、Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆｅ，
Ｃｏ，Ａｇを所定量添加することで、より高レベルな破
断強度を得ると共に、低ループ化をさらに促進すること
ができた。

Claims (2)

    【特許請求の範囲】
  1. 【請求項１】 高純度Ａｕに、高純度Ｐｄを１〜４０wt
    ％含有せしめると共に、Ｓｃ，Ｙ，希土類元素の中から
    １種以上を、０．０００１〜０．０５wt％含有せしめて
    なる半導体素子用ボンディング線。
  2. 【請求項２】 高純度Ａｕに、高純度Ｐｄを１〜４０wt
    ％含有せしめると共に、Ｓｃ，Ｙ，希土類元素の中から
    １種以上を、０．０００１〜０．０５wt％含有せしめ、
    且つ、Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆｅ，Ｃｏ，Ａｇの中
    から１種以上を０．０００１〜０．０５wt％含有せしめ
    てなる半導体素子用ボンディング線。
JP04262219A 1992-09-30 1992-09-30 半導体素子用ボンディング線 Expired - Lifetime JP3090549B2 (ja)

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JP04262219A JP3090549B2 (ja) 1992-09-30 1992-09-30 半導体素子用ボンディング線

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JPH06112255A true JPH06112255A (ja) 1994-04-22
JP3090549B2 JP3090549B2 (ja) 2000-09-25

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5945065A (en) * 1996-07-31 1999-08-31 Tanaka Denshi Kogyo Method for wedge bonding using a gold alloy wire
US6159420A (en) * 1996-05-28 2000-12-12 Tanaka Denshi Kogyo K.K. Gold alloy wire and method for making a bump
CN104785957A (zh) * 2015-04-08 2015-07-22 广州先艺电子科技有限公司 一种金锡合金丝材热轧方法
CN105063407A (zh) * 2015-05-30 2015-11-18 汕头市骏码凯撒有限公司 一种led封装用银合金键合丝及其制造方法

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AU2020233758A1 (en) * 2019-03-12 2021-10-21 Young Chuel Cha Wheelchair and headrest therefor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159420A (en) * 1996-05-28 2000-12-12 Tanaka Denshi Kogyo K.K. Gold alloy wire and method for making a bump
US6213382B1 (en) 1996-05-28 2001-04-10 Tanaka Denshi Kogyo K.K. Method for making a bump
US5945065A (en) * 1996-07-31 1999-08-31 Tanaka Denshi Kogyo Method for wedge bonding using a gold alloy wire
CN104785957A (zh) * 2015-04-08 2015-07-22 广州先艺电子科技有限公司 一种金锡合金丝材热轧方法
CN105063407A (zh) * 2015-05-30 2015-11-18 汕头市骏码凯撒有限公司 一种led封装用银合金键合丝及其制造方法

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