JP3204336B2 - 半導体素子用ボンディング線 - Google Patents
半導体素子用ボンディング線Info
- Publication number
- JP3204336B2 JP3204336B2 JP26222092A JP26222092A JP3204336B2 JP 3204336 B2 JP3204336 B2 JP 3204336B2 JP 26222092 A JP26222092 A JP 26222092A JP 26222092 A JP26222092 A JP 26222092A JP 3204336 B2 JP3204336 B2 JP 3204336B2
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- wire
- added
- point
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01004—Beryllium [Be]
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- H01L2924/01057—Lanthanum [La]
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- H01L2924/01079—Gold [Au]
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- H01L2924/01105—Rare earth metals
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- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
極と基板上の外部リードとを接続するために用いられる
半導体素子用ボンディングAu線、特にワイヤボンディ
ング法及びバンプ接続法に好適なものに関する。
垂下せしめたAu線の先端を電気トーチにより溶融させ
てボールを形成し、このボールをチップ上のAl又はA
l合金からなる電極に圧着・切断してバンプ電極を形成
するバンプ接続法や、前記ボールをチップ電極に圧着,
接合せしめた後、ループ状に外部リードまで導いて該外
部リードに圧着・切断することにより、チップ電極と外
部リードを接続させるワイヤボンディング法が知られて
いる。
なAu線として、特公昭62−22448号に開示され
るように、Pd,Pt,Rh,Ir,Os,Ru(即
ち、Pt族元素)の中から1種以上を添加すると同時
に、Ca,Be,Ge,Ni,Fe,Co,Agの中か
ら1種以上を添加してなるものがある。
ボンディング線では、前記各元素の添加によってAu線
における強度の向上は図れるものの、チップ上のAl電
極とボールとの接合面(即ち、A点)におけるAuとA
lの相互拡散が阻害され、その結果、ボンディング後の
高温放置試験におけるA点剥がれの発生率が高くなると
いう不具合があった。
れたものであり、その目的とするところは、Pt族元素
の添加によりAu線の強度向上を図ると同時に、高温放
置試験におけるA点剥がれの発生率を低下させることに
ある。
導体素子用ボンディング線は、Pd,Pt,Rh,I
r,Os,Ruの中から少なくとも1種を0.0003
〜0.1wt%含有し、Sc,Y,希土類元素の中から1
種以上を0.0001〜0.05wt%含有し、残部がA
uと不可避不純物である組成としたことを特徴とする。
r,Os,Ruの添加量を0.0003〜0.1wt%の
範囲内とし、且つSc,Y,希土類元素の中から少なく
とも1種を同時添加することで、Au線の破断強度が向
上すると同時に、ボールとチップ電極の下地金属層との
接合面におけるAuとAlの相互拡散が適度になされ、
該接合面、即ち、A点における接合強度が改善される。
s,Ruの添加量が0.0003wt%未満では満足な破
断強度が得られないと共に、前記接合面におけるAuと
Alの相互拡散が過剰になり、接合強度の低下が生じ
る。また、Pd,Pt,Rh,Ir,Os,Ruの添加
量が0.1wt%を越えると、前記接合面におけるAuと
Alの相互拡散が阻害されて接合強度が低下し、A点剥
がれの発生率が高くなる。
0.0001wt%未満だと前述の効果を得られず、ま
た、これら添加元素の総添加量が0.05wt%を越える
と、ボール形成時におけるボール形状が安定せず、ボー
ルとチップ電極との接合強度が低下してA点剥がれの発
生率が高くなる。
Ruの添加量を0.0003〜0.1wt%の範囲に、S
c,Y,希土類元素の添加量を0.0001〜0.05
wt%の範囲に、各々設定した。
する。高純度Au(99.99%以上)に、Pd,P
t,Rh,Ir,Os,Ru,Sc,Y,La,Ce、
Ca,Be,Ge,Ni,Fe,Co,Agを表1中に
示す含有率に基づき添加して溶解鋳造し、次に溝ロール
加工を施し、その途中で焼なまし処理を施した後に線引
加工で線径25μmの母線に成形し、更に十分な応力除
去を行うことにより各試料とした。
に、Pd,Pt,Rh,Ir,Os,Ru(以下、添加
元素Iという)の中から少なくとも1種を添加すると共
に、Sc,Y,希土類元素(以下、添加元素IIという)
の中から少なくとも1種を添加した本発明実施品であ
る。
純度Auに、上記添加元素Iの中から少なくとも1種を
添加し、添加元素IIを添加しない比較品、試料NO.1
3〜15は添加元素Iの中から少なくとも1種を添加す
ると共に、Ca,Be,Ge,Ni,Fe,Co,Ag
の中から少なくとも1種を添加せしめた比較品である。
a,Ceを選んだが、これ以外の希土類元素はLa,C
eと同質性のため省略した。
により所定の伸び率に合わせた後、破断強度及びA点剥
がれ発生率を測定した。
mにて引張速度10mm/minで引張り試験を行った
時の破断荷重を測定した。
(0.8μm厚)のチップ電極上に所定条件にてボンデ
ィングした後、Alが拡散し易い高温条件下で放置し
(200℃×300時間)、その後にC点(ループ部)
を引張るプルテストを行って、ボンディングワイヤがチ
ップとの接合面から剥がれた割合を計算した。これらの
結果も表中に示す。
ら、高純度Auに添加元素I(Pd,Pt,Rh,I
r,Os,Ru)を0.0003〜0.1wt%の範囲内
で添加すると共に、添加元素II(Sc,Y,希土類元
素)の中から少なくとも1種を同時添加すれば、所望の
破断強度が得られると同時に、ボールとチップ電極の下
地金属層との接合面(A点)において剥がれが発生せ
ず、該接合面における接合強度が改善されることが確認
できた。
ら、上記添加元素Iのみを添加した場合は、破断強度に
ついては添加元素の種類,添加量の違いによってばらつ
きがあるものの、A点剥がれの発生率が高いことが確認
できた。
から、上記添加元素Iに加えてCa,Be,Ge,N
i,Fe,Co,Agを添加した場合は、ある程度の破
断強度は得られるものの、A点剥がれの発生率が高いこ
とが確認できた。
線は以上説明したように構成したので、Pd,Pt,R
h,Ir,Os,Ruの添加による破断強度の向上効果
はそのまま維持しつつ、その添加量を所定の範囲内に限
定し且つSc,Y,希土類元素を所定量添加すること
で、ボンディング後の高温放置試験におけるA点剥がれ
の発生率を著しく低下できる。
度を得られると共に、ボールとチップ電極の接合強度を
著しく改善して、ワイヤボンディング法及びバンプ接続
法に用いるに極めて有用な半導体素子用ボンディング線
を提供できた。
Claims (1)
- 【請求項1】 Pd,Pt,Rh,Ir,Os,Ruの
中から少なくとも1種を0.0003〜0.1wt%含有
し、Sc,Y,希土類元素の中から1種以上を0.00
01〜0.05wt%含有し、残部がAuと不可避不純物
である半導体素子用ボンディング線。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26222092A JP3204336B2 (ja) | 1992-09-30 | 1992-09-30 | 半導体素子用ボンディング線 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26222092A JP3204336B2 (ja) | 1992-09-30 | 1992-09-30 | 半導体素子用ボンディング線 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06112256A JPH06112256A (ja) | 1994-04-22 |
JP3204336B2 true JP3204336B2 (ja) | 2001-09-04 |
Family
ID=17372752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26222092A Expired - Lifetime JP3204336B2 (ja) | 1992-09-30 | 1992-09-30 | 半導体素子用ボンディング線 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3204336B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5945065A (en) * | 1996-07-31 | 1999-08-31 | Tanaka Denshi Kogyo | Method for wedge bonding using a gold alloy wire |
EP0890987B1 (de) * | 1997-07-07 | 2003-03-05 | W.C. Heraeus GmbH & Co. KG | Feinstdraht aus einer Goldlegierung, Verfahren zu seiner Herstellung und seine Verwendung |
AT407830B (de) * | 1999-09-10 | 2001-06-25 | Degussa Huels Cee Gmbh | Hochgoldhaltige, gelbe dentallegierung |
JP2004257950A (ja) * | 2003-02-27 | 2004-09-16 | Denso Corp | 半導体圧力センサ |
JP4513440B2 (ja) * | 2004-07-15 | 2010-07-28 | 住友ベークライト株式会社 | 半導体装置 |
CN105063407B (zh) * | 2015-05-30 | 2018-01-26 | 汕头市骏码凯撒有限公司 | 一种led封装用银合金键合丝及其制造方法 |
-
1992
- 1992-09-30 JP JP26222092A patent/JP3204336B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH06112256A (ja) | 1994-04-22 |
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