JPH06112254A - 半導体素子用ボンディング線 - Google Patents
半導体素子用ボンディング線Info
- Publication number
- JPH06112254A JPH06112254A JP4262217A JP26221792A JPH06112254A JP H06112254 A JPH06112254 A JP H06112254A JP 4262217 A JP4262217 A JP 4262217A JP 26221792 A JP26221792 A JP 26221792A JP H06112254 A JPH06112254 A JP H06112254A
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- wire
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01004—Beryllium [Be]
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- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
時に、その添加量を適度な範囲として、高温放置試験に
おけるA点剥がれの発生率を低下させる。 【構成】高純度Auに、高純度のPtを0.1 〜1wt%含
有せしめ、且つ、Fe,Si,Be,Ca,Ge,Y,
Sc,希土類元素の少なくとも1種を0.0001〜0.005 wt
%含有せしめて溶解鋳造し、次に溝ロール加工を施し、
その途中で焼なまし処理を施した後に線引加工し、更に
十分な応力除去を行って線径25μmの母線を成形した。
Description
極と基板上の外部リードとを接続するために用いられる
半導体素子用ボンディングAu線、特にワイヤボンディ
ング法及びバンプ接続法に好適なものに関する。
垂下せしめたAu線の先端を電気トーチにより溶融させ
てボールを形成し、このボールをチップ上のAl又はA
l合金からなる電極に圧着・切断してバンプ電極を形成
するバンプ接続法や、前記ボールをチップ電極に圧着,
接合せしめた後、ループ状に外部リードまで導いて該外
部リードに圧着・切断することにより、チップ電極と外
部リードを接続させるワイヤボンディング法が知られて
いる。また、この種ボンディングに用いるに有用なAu
線として、特公昭62−23454号,特開平2−11
9148号に開示されるような、所定範囲量のPtを添
加してなるものがある。
ボンディング線では、Ptの1wt%以上の添加によって
Au線における強度の向上は図れるものの、チップ上の
Al電極とボールとの接合面(即ち、A点)におけるA
uとAlの相互拡散が阻害され、その結果、ボンディン
グ後の高温放置試験におけるA点剥がれの発生率が高く
なるという不具合があった。
れたものであり、その目的とするところは、Ptの添加
によりAu線の強度向上を図ると同時に、その含有量を
適度な範囲として、高温放置試験におけるA点剥がれの
発生率を低下させることにある。
めに、本発明の半導体素子用ボンディング線は、高純度
Auに、高純度のPtを0.1〜1wt%含有せしめてな
ることを特徴とする。また、後述の理由から、前記の配
合に、Fe,Si,Be,Ca,Ge,Y,Sc,希土
類元素の中から少なくとも1種を、総添加量0.000
1〜0.005wt%含有せしめることが有用である。
線の破断強度が向上すると同時に、Ptの添加量を0.
1〜1wt%の範囲内とすることにより、ボールとチップ
電極の下地金属層との接合面におけるAuとAlの相互
拡散が適度になされ、該接合面、即ち、A点における接
合強度が改善される。
Y,Sc,希土類元素の中から少なくとも1種を添加す
ることで、Au線の破断強度のさらなる向上が図れる。
満では満足な破断強度が得られないと共に、前記接合面
におけるAuとAlの相互拡散が過剰になり、接合強度
の低下が生じる。また、Ptの添加量が1wt%を越える
と、前記接合面におけるAuとAlの相互拡散が阻害さ
れて接合強度が低下し、A点剥がれの発生率が高くな
る。
Y,Sc,希土類元素の総添加量が0.0001wt%未
満だと満足な特性を得られず、また、これら添加元素の
総添加量が0.005wt%を越えると、ボール形成時に
おけるボール形状が安定せず、ボールとチップ電極との
接合強度が低下してA点剥がれの発生率が高くなる。
範囲に、Fe,Si,Be,Ca,Ge,Y,Sc,希
土類元素の総添加量を0.0001〜0.005wt%の
範囲に、各々設定した。
t,Fe,Si,Be,Ca,Ge,Y,Sc,La,
Ceを表1中に示す含有率に基づき添加して溶解鋳造
し、次に溝ロール加工を施し、その途中で焼なまし処理
を施した後に線引加工で線径25μmの母線に成形し、
更に十分な応力除去を行うことにより各試料とした。
にPtを添加した本発明実施品、試料No.4〜13
は、高純度AuにFe,Si,Be,Ca,Ge,Y,
Sc,希土類元素の代表としてLa,Ceを選び、その
中から少なくとも1種を添加した本発明実施品、試料N
o.14は高純度Auに何も添加しない比較品、試料N
o.15は高純度AuにPtを2wt%添加せしめた比較
品、試料No.16〜18高純度AuにPtを添加する
と共に、前述の添加元素(Fe,Si,Be,Ca,G
e,Y,Sc,La,Ce)の中から三種を選びそれら
の総添加量が0.005wt%を越える比較品である。
a,Ceのデータを示したが、これ以外の希土類元素は
La,Ceと同質性のため省略した。
により所定の伸び率に合わせた後、破断強度及びA点剥
がれ発生率を測定した。
mにて引張速度10mm/minで引張り試験を行った
時の破断荷重を測定した。
(0.8μm厚)のチップ電極上に所定条件にてボンデ
ィングした後、Alが拡散し易い高温条件下で放置し
(200℃×300時間)、その後にC点(ループ部)
を引張るプルテストを行って、ボンディングワイヤがチ
ップとの接合面から剥がれた割合を計算した。これらの
結果も表1中に示す。
AuにPtを0.1〜1wt%の範囲内で添加すれば、所
定の破断強度が得られると同時に、ボールとチップ電極
の下地金属層との接合面(A点)において剥がれが発生
せず、該接合面における接合強度が改善されることが確
認できた。
ら、0.1〜1wt%のPtの添加に加えて、Fe,S
i,Be,Ca,Ge,Y,Sc,希土類元素の中から
少なくとも1種を所定量添加すれば、前述の効果におい
て破断強度をより向上し得ることが確認できた。
Ptの添加が0.1wt%未満では所定の破断強度が得ら
れないと共に、A点剥がれの発生率が高いこと、試料N
o.15の測定結果から、Ptの添加が1wt%を越える
と、破断強度は満足し得るもののA点剥がれの発生率が
高いことが確認できた。
ら、Ptの添加量が0.1〜1wt%の範囲内であって
も、Fe,Si,Be,Ca,Ge,Y,Sc,希土類
元素の添加総量が0.005を越えると、A点剥がれの
発生率が高くなることが確認できた。
線は以上説明したように構成したので、Ptの添加によ
る破断強度の向上効果はそのまま維持しつつ、ボンディ
ング後の高温放置試験におけるA点剥がれの発生率を著
しく低下できる。
度を得られると共に、ボールとチップ電極の接合強度を
著しく改善して、ワイヤボンディング法及びバンプ接続
法に用いるに極めて有用な半導体素子用ボンディング線
を提供できた。
Y,Sc,希土類元素を所定量添加することで、前述の
効果に加えて、破断強度のさらなる向上を図ることがで
きた。
Claims (2)
- 【請求項1】 高純度Auに、高純度のPtを0.1〜
1wt%含有せしめてなる半導体素子用ボンディング線。 - 【請求項2】 高純度Auに、高純度のPtを0.1〜
1wt%含有せしめ、且つ、Fe,Si,Be,Ca,G
e,Y,Sc,希土類元素の中から少なくとも1種を、
総添加量0.0001〜0.005wt%含有せしめてな
る半導体素子用ボンディング線。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26221792A JP3185994B2 (ja) | 1992-09-30 | 1992-09-30 | 半導体素子用ボンディング線 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26221792A JP3185994B2 (ja) | 1992-09-30 | 1992-09-30 | 半導体素子用ボンディング線 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06112254A true JPH06112254A (ja) | 1994-04-22 |
JP3185994B2 JP3185994B2 (ja) | 2001-07-11 |
Family
ID=17372708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26221792A Expired - Fee Related JP3185994B2 (ja) | 1992-09-30 | 1992-09-30 | 半導体素子用ボンディング線 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3185994B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5945065A (en) * | 1996-07-31 | 1999-08-31 | Tanaka Denshi Kogyo | Method for wedge bonding using a gold alloy wire |
US6103025A (en) * | 1997-07-07 | 2000-08-15 | W. C. Heraeus Gmbh & Co. Kg | Fine wire of gold alloy, method for manufacture thereof and use thereof |
-
1992
- 1992-09-30 JP JP26221792A patent/JP3185994B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5945065A (en) * | 1996-07-31 | 1999-08-31 | Tanaka Denshi Kogyo | Method for wedge bonding using a gold alloy wire |
US6103025A (en) * | 1997-07-07 | 2000-08-15 | W. C. Heraeus Gmbh & Co. Kg | Fine wire of gold alloy, method for manufacture thereof and use thereof |
Also Published As
Publication number | Publication date |
---|---|
JP3185994B2 (ja) | 2001-07-11 |
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