JPS6026822B2 - 高張力Ａｕ合金細線 - Google Patents

高張力Ａｕ合金細線

Info

Publication number
JPS6026822B2
JPS6026822B2 JP56110827A JP11082781A JPS6026822B2 JP S6026822 B2 JPS6026822 B2 JP S6026822B2 JP 56110827 A JP56110827 A JP 56110827A JP 11082781 A JP11082781 A JP 11082781A JP S6026822 B2 JPS6026822 B2 JP S6026822B2
Authority
JP
Japan
Prior art keywords
wire
tensile strength
strength
high tensile
fine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56110827A
Other languages
English (en)
Other versions
JPS5816041A (ja
Inventor
直之 細田
保 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP56110827A priority Critical patent/JPS6026822B2/ja
Publication of JPS5816041A publication Critical patent/JPS5816041A/ja
Publication of JPS6026822B2 publication Critical patent/JPS6026822B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Conductive Materials (AREA)

Description

【発明の詳細な説明】 この発明は、特に断面直径が０．０５帆０以下での使用
にも耐える高張力Ａｕ合金細線に関するものである。
従来より装飾用、あるいは半導体装置（トランジスタ，
ＩＣ，山１など）のりード線（基板と半導体素子との結
線に用いられる紬線）用などとして金線が使用されてい
ることは良く知られるところであるが、近年、装飾分野
おいては多様化の面から、また半導体装置分野において
は、経済性、集積度の高密化、並びに後続の高速化の面
から、より細く（直径：０．０５肋）以下）、かつより
強度のある（切れづらい）金線の要望が強くなっている
。
そこで、本発明者等は、上述のような観点から、直径：
０．０５側？以下の細線とした状態で、上記のような使
用分野で十分に使用に耐える高張力（高強度）をもった
金細線を得べく研究を行なった結果、Ｃａ：０．０００
３〜０．００１０％を含有し、さらにＳｉおよびＳｎの
うちの１種または２種：０．０００３〜０．００５０％
を含有し、残りがＡｕと不可避不純物からなる組成（以
上重量％）を有するＡｕ合金は、高張力（高強度）およ
び良好な伸線加工性を有し、したがって、直径を０．０
５肋■以下の細線とした状態で、十分に使用に耐える高
張力を示すという知見を得たのである。
この発明は、上記知見にもとづいてなされたものであっ
て、上記の通り成分組成を限定したのは次に示す理由に
よるものである。
すなわち、種々の合金成分について強度および耐熱性の
面から実験を行なった結果、Ｃａと、Ｓｉおよび／また
はＳｎとを共存させた場合に、所望の高強度（高張力）
並びに耐熱性（特に３００ｏｏ以下での軟化抑制）が得
られ、かつ伸線加工性も良好であることが経験的に判明
したのである。したがって、Ｃａ、並びにＳｉ（および
／またはＳｎ）の含有量のいずれかが上記の下限値未満
、すなわちＣａ：０．０００３％未満、Ｓｉ（および／
またはＳｎ）：０．０００３％未満でも所望の前記特性
を確保することができず、一方ＣａおよびＳｉ（および
／またはＳｎ）のいれかでも記の上限値、すなわちＣａ
：０．００１０％，Ｓｉ（および／またはＳｎ）：０．
００５０％を越えると、腕化が現われるようになると共
に、電気抵抗の増大をきたすようになることから、それ
ぞれの含有量を、Ｃａ：０．０００３〜０．００１０％
，および／またはＳｎ：０．０００３〜０．００５０％
と定めたのである。つぎに、この発明のＡｕ合金細線を
実施例により具体的に説明する。実施例 通常の溶解法によりそれぞれ第１表に示される成分組成
をもったＡｕ合金溶湯を調製し鋳造した後、公知の溝型
圧延機を用いて圧延し、引続いて線引加工を行うことに
よって直径：０．０２５柵０の本発明Ａｕ合金細線１〜
８をそれぞれ製造した。
ついで、この結果得られた本発明Ａｕ合金紬線１〜８に
ついて引張試験を行ない、常温における破断強度および
伸び、さらに２５０℃に３０秒保持直後の破断強度を測
定した。この測定結果を同直径の純金紬線の同測定値と
ともに第１表に併せて示＊した。第１表に示される結果
から、本発明Ａｕ合金細線１〜８は、いずれも純金紬線
に比して高い強度（高張力）を有し、かつ耐熱性も具備
していることが明らかである。
上述のように、この発明のＡｕ合金紬線は、高張力並び
に耐熱性を有しているので、多様化する装飾分野は勿論
のこと、半導体装櫨のりード線など第１表 として使用した場合にすぐれた性能を発揮するのである
。

Claims (1)

    【特許請求の範囲】
  1. １ Ｃａ：０．０００３〜０．００１０％を含有し、さ
    らにＳｉおよびＳｎのうちの１種または２種：０．００
    ０３〜０．００５０％を含有し、残りがＡｕと不可避不
    純物からなる組成（以上重量％）を有することを特徴と
    する高張力Ａｕ合金細線。
JP56110827A 1981-07-17 1981-07-17 高張力Ａｕ合金細線 Expired JPS6026822B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56110827A JPS6026822B2 (ja) 1981-07-17 1981-07-17 高張力Ａｕ合金細線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56110827A JPS6026822B2 (ja) 1981-07-17 1981-07-17 高張力Ａｕ合金細線

Publications (2)

Publication Number Publication Date
JPS5816041A JPS5816041A (ja) 1983-01-29
JPS6026822B2 true JPS6026822B2 (ja) 1985-06-26

Family

ID=14545653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56110827A Expired JPS6026822B2 (ja) 1981-07-17 1981-07-17 高張力Ａｕ合金細線

Country Status (1)

Country Link
JP (1) JPS6026822B2 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2613224B2 (ja) * 1987-09-29 1997-05-21 田中貴金属工業株式会社 金極細線用材料
JP2778093B2 (ja) * 1988-09-29 1998-07-23 三菱マテリアル株式会社 金バンプ用金合金細線
GB2231336B (en) * 1989-04-28 1993-09-22 Tanaka Electronics Ind Gold wire for the bonding of a semiconductor device
JPH04304335A (ja) * 1991-03-30 1992-10-27 Mitsubishi Materials Corp 貴金属カード用純金箔材
JP2780611B2 (ja) * 1993-09-06 1998-07-30 三菱マテリアル株式会社 少量成分の合金化で硬質化した金装飾品材
JPH07316689A (ja) * 1994-05-19 1995-12-05 Ishifuku Metal Ind Co Ltd 高純度硬質金材料

Also Published As

Publication number Publication date
JPS5816041A (ja) 1983-01-29

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