JPH06112253A - 半導体素子用ボンディング線 - Google Patents

半導体素子用ボンディング線

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Publication number
JPH06112253A
JPH06112253A JP4262216A JP26221692A JPH06112253A JP H06112253 A JPH06112253 A JP H06112253A JP 4262216 A JP4262216 A JP 4262216A JP 26221692 A JP26221692 A JP 26221692A JP H06112253 A JPH06112253 A JP H06112253A
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JP
Japan
Prior art keywords
added
wire
purity
bonding
earth elements
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Application number
JP4262216A
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JP3064692B2 (ja
Inventor
Kazumitsu Itabashi
一光 板橋
Takeshi Kujiraoka
毅 鯨岡
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Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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Priority to JP4262216A priority Critical patent/JP3064692B2/ja
Publication of JPH06112253A publication Critical patent/JPH06112253A/ja
Application granted granted Critical
Publication of JP3064692B2 publication Critical patent/JP3064692B2/ja
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Expired - Lifetime legal-status Critical Current

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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05599—Material
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    • H01L2224/485—Material
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    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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Abstract

(57)【要約】 【目的】Ｐｄの添加によりＡｕ線の強度向上を図ると同
時に、その添加量を適度な範囲として、高温放置試験に
おけるＡ点剥がれの発生率を低下させる。 【構成】高純度Ａｕに、高純度のＰｄを0.01〜１wt％含
有せしめ、且つ、Ｆｅ，Ｓｉ，Ｂｅ，Ｃａ，Ｇｅ，Ｙ，
Ｓｃ，希土類元素の少なくとも１種を0.0001〜0.005 wt
％含有せしめて溶解鋳造し、次に溝ロール加工を施し、
その途中で焼なまし処理を施した後に線引加工し、更に
十分な応力除去を行って線径25μｍの母線を成形した。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、半導体素子のチップ電
極と基板上の外部リードとを接続するために用いられる
半導体素子用ボンディングＡｕ線、特にワイヤボンディ
ング法及びバンプ接続法に好適なものに関する。
【０００２】
【従来の技術】従来から、例えばキャピラリーの先端に
垂下せしめたＡｕ線の先端を電気トーチにより溶融させ
てボールを形成し、このボールをチップ上のＡｌ又はＡ
ｌ合金からなる電極に圧着・切断してバンプ電極を形成
するバンプ接続法や、前記ボールをチップ電極に圧着，
接合せしめた後、ループ状に外部リードまで導いて該外
部リードに圧着・切断することにより、チップ電極と外
部リードを接続させるワイヤボンディング法が知られて
いる。また、この種ボンディングに用いるに有用なＡｕ
線として、特公昭６２−２３４５５号，特開平２−９１
９４４号に開示されるような、所定範囲量のＰｄを添加
してなるものがある。
【０００３】
【発明が解決しようとする課題】しかし乍ら上記従来の
ボンディング線では、Ｐｄの１wt％以上の添加によって
Ａｕ線における強度の向上は図れるものの、チップ上の
Ａｌ電極とボールとの接合面（即ち、Ａ点）におけるＡ
ｕとＡｌの相互拡散が阻害され、その結果、ボンディン
グ後の高温放置試験におけるＡ点剥がれの発生率が高く
なるという不具合があった。
【０００４】本発明はこのような従来事情に鑑みてなさ
れたものであり、その目的とするところは、Ｐｄの添加
によりＡｕ線の強度向上を図ると同時に、高温放置試験
におけるＡ点剥がれの発生率を低下させることにある。
【０００５】
【課題を解決するための手段】以上の目的を達成するた
めに、本発明の半導体素子用ボンディング線は、高純度
Ａｕに、高純度のＰｄを０．０１〜１wt％含有せしめる
と共に、Ｆｅ，Ｓｉ，Ｂｅ，Ｃａ，Ｇｅ，Ｙ，Ｓｃ，希
土類元素の中から少なくとも１種を、総添加量０．００
０１〜０．００５wt％含有せしめたことを特徴とする。
【０００６】
【作用】上記の構成によれば、Ｐｄの添加量を０．０１
〜１wt％の範囲内とし、且つＦｅ，Ｓｉ，Ｂｅ，Ｃａ，
Ｇｅ，Ｙ，Ｓｃ，希土類元素の中から少なくとも１種を
添加することで、Ａｕ線の破断強度が向上すると同時
に、ボールとチップ電極の下地金属層との接合面におけ
るＡｕとＡｌの相互拡散が適度になされ、該接合面、即
ち、Ａ点における接合強度が改善される。
【０００７】しかし乍ら、Ｐｄの添加量が０．０１wt％
未満では満足な破断強度が得られないと共に、前記接合
面におけるＡｕとＡｌの相互拡散が過剰になり、接合強
度の低下が生じる。また、Ｐｄの添加量が１wt％を越え
ると、前記接合面におけるＡｕとＡｌの相互拡散が阻害
されて接合強度が低下し、Ａ点剥がれの発生率が高くな
る。
【０００８】さらに、Ｆｅ，Ｓｉ，Ｂｅ，Ｃａ，Ｇｅ，
Ｙ，Ｓｃ，希土類元素の総添加量が０．０００１wt％未
満だと満足な特性が得られず、また、これら添加元素の
総添加量が０．００５wt％を越えると、ボール形成時に
おけるボール形状が安定せず、ボールとチップ電極との
接合強度が低下してＡ点剥がれの発生率が高くなる。
【０００９】従って、Ｐｄの添加量を０．０１〜１wt％
の範囲に、Ｆｅ，Ｓｉ，Ｂｅ，Ｃａ，Ｇｅ，Ｙ，Ｓｃ，
希土類元素の総添加量を０．０００１〜０．００５wt％
の範囲に、各々設定した。
【００１０】
【実施例】以下、具体的な実施例について説明する。
【００１１】高純度Ａｕ（９９．９９％以上）に、Ｐ
ｄ，Ｆｅ，Ｓｉ，Ｂｅ，Ｃａ，Ｇｅ，Ｙ，Ｓｃ，Ｌａを
表１中に示す含有率に基づき添加して溶解鋳造し、次に
溝ロール加工を施し、その途中で焼なまし処理を施した
後に線引加工で線径２５μｍの母線に成形し、更に十分
な応力除去を行うことにより各試料とした。
【００１２】表１中の試料Ｎｏ．１〜１４は、高純度Ａ
ｕにＰｄを添加すると共に、Ｆｅ，Ｓｉ，Ｂｅ，Ｃａ，
Ｇｅ，Ｙ，Ｓｃ，希土類元素の代表としてＬａを選び、
その中から少なくとも１種を添加した本発明実施品であ
る。また、試料Ｎｏ．１５は高純度Ａｕに何も添加しな
い比較品、試料Ｎｏ．１６は高純度ＡｕにＰｄを６wt％
添加せしめた比較品、試料Ｎｏ．１７，１８はＦｅ，Ｓ
ｉ，Ｂｅ，Ｃａ，Ｇｅ，Ｙ，Ｓｃ，希土類元素の総添加
量を０．００５wt％を越えるものとした比較品、試料Ｎ
ｏ．１９，２０は同添加量を０．０００１wt未満とした
比較品である。
【００１３】尚、表１では希土類元素の代表としてＬａ
のデータを示したが、これ以外の希土類元素はＬａと同
質性のため省略した。
【００１４】上記のようにして作製した各試料を熱処理
により所定の伸び率に合わせた後、破断強度及びＡ点剥
がれ発生率を測定した。
【００１５】破断強度は、各試料を標点間距離１００ｍ
ｍにて引張速度１０ｍｍ／ｍｉｎで引張り試験を行った
時の破断荷重を測定した。
【００１６】Ａ点剥がれ発生率は、各試料をＡｌ薄膜
（０．８μｍ厚）のチップ電極上に所定条件にてボンデ
ィングした後、Ａｌが拡散し易い高温条件下で放置し
（２００℃×３００時間）、その後にＣ点（ループ部）
を引張るプルテストを行って、ボンディングワイヤがチ
ップとの接合面から剥がれた割合を計算した。これらの
結果も表１中に示す。
【００１７】
【表１】
【００１８】試料Ｎｏ．１〜１４の測定結果から、高純
度ＡｕにＰｄを０．０１〜１wt％の範囲内で添加すると
共に、Ｆｅ，Ｓｉ，Ｂｅ，Ｃａ，Ｇｅ，Ｙ，Ｓｃ，希土
類元素の中から少なくとも１種を所定量添加すれば、所
望の破断強度が得られると同時に、ボールとチップ電極
の下地金属層との接合面（Ａ点）において剥がれが発生
せず、該接合面における接合強度が改善されることが確
認できた。
【００１９】また、試料Ｎｏ．１５の測定結果から、Ｐ
ｄの添加が０．０１wt％未満では所定の破断強度が得ら
れないと共に、Ａ点剥がれの発生率が高いこと、試料Ｎ
ｏ．１６の測定結果から、Ｐｄの添加が１wt％を越える
と、破断強度は満足し得るもののＡ点剥がれの発生率が
高いことが確認できた。
【００２０】さらに、試料Ｎｏ．１７〜２０の測定結果
から、Ｐｄの添加量が０．０１〜１wt％の範囲内であっ
ても、Ｆｅ，Ｓｉ，Ｂｅ，Ｃａ，Ｇｅ，Ｙ，Ｓｃ，希土
類元素の添加総量が０．０００１wt％未満では満足な特
性を得られないことが、０．００５wt％を越えるとＡ点
剥がれが発生することが、夫々確認できた。
【００２１】
【発明の効果】本発明に係る半導体素子用ボンディング
線は以上説明したように構成したので、Ｐｄの添加によ
る破断強度の向上効果はそのまま維持しつつ、その添加
量を所定の範囲内に限定し、且つ、Ｆｅ，Ｓｉ，Ｂｅ，
Ｃａ，Ｇｅ，Ｙ，Ｓｃ，希土類元素を所定量添加するこ
とで、ボンディング後の高温放置試験におけるＡ点剥が
れの発生率を著しく低下できる。
【００２２】従って、ボンディング後において所定の強
度を得られると共に、ボールとチップ電極の接合強度を
著しく改善して、ワイヤボンディング法及びバンプ接続
法に用いるに極めて有用な半導体素子用ボンディング線
を提供できた。

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】 高純度Ａｕに、高純度のＰｄを０．０１
    〜１wt％含有せしめると共に、Ｆｅ，Ｓｉ，Ｂｅ，Ｃ
    ａ，Ｇｅ，Ｙ，Ｓｃ，希土類元素の中から少なくとも１
    種を、総添加量０．０００１〜０．００５wt％含有せし
    めてなる半導体素子用ボンディング線。
JP4262216A 1992-09-30 1992-09-30 半導体素子用ボンディング線 Expired - Lifetime JP3064692B2 (ja)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
JP4262216A JP3064692B2 (ja) 1992-09-30 1992-09-30 半導体素子用ボンディング線

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JPH06112253A true JPH06112253A (ja) 1994-04-22
JP3064692B2 JP3064692B2 (ja) 2000-07-12

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5945065A (en) * 1996-07-31 1999-08-31 Tanaka Denshi Kogyo Method for wedge bonding using a gold alloy wire
US6159420A (en) * 1996-05-28 2000-12-12 Tanaka Denshi Kogyo K.K. Gold alloy wire and method for making a bump
JP2006032643A (ja) * 2004-07-15 2006-02-02 Sumitomo Bakelite Co Ltd 半導体装置
JP2012099802A (ja) * 2010-10-08 2012-05-24 Tatsuta Electric Wire & Cable Co Ltd ボールボンディング用ワイヤ
JP2012109556A (ja) * 2010-10-25 2012-06-07 Tatsuta Electric Wire & Cable Co Ltd バンプ用ワイヤ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159420A (en) * 1996-05-28 2000-12-12 Tanaka Denshi Kogyo K.K. Gold alloy wire and method for making a bump
US6213382B1 (en) 1996-05-28 2001-04-10 Tanaka Denshi Kogyo K.K. Method for making a bump
US5945065A (en) * 1996-07-31 1999-08-31 Tanaka Denshi Kogyo Method for wedge bonding using a gold alloy wire
JP2006032643A (ja) * 2004-07-15 2006-02-02 Sumitomo Bakelite Co Ltd 半導体装置
JP4513440B2 (ja) * 2004-07-15 2010-07-28 住友ベークライト株式会社 半導体装置
JP2012099802A (ja) * 2010-10-08 2012-05-24 Tatsuta Electric Wire & Cable Co Ltd ボールボンディング用ワイヤ
JP2012109556A (ja) * 2010-10-25 2012-06-07 Tatsuta Electric Wire & Cable Co Ltd バンプ用ワイヤ

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