JPS5896741A - 半導体素子結線用高張力ａｕ合金細線 - Google Patents

半導体素子結線用高張力ａｕ合金細線

Info

Publication number
JPS5896741A
JPS5896741A JP56195299A JP19529981A JPS5896741A JP S5896741 A JPS5896741 A JP S5896741A JP 56195299 A JP56195299 A JP 56195299A JP 19529981 A JP19529981 A JP 19529981A JP S5896741 A JPS5896741 A JP S5896741A
Authority
JP
Japan
Prior art keywords
alloy
high tensile
wire
semiconductor elements
gage wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56195299A
Other languages
English (en)
Other versions
JPS6351377B2 (ja
Inventor
Naoyuki Hosoda
細田　直之
Masayuki Tanaka
正幸 田中
Tamotsu Mori
保 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP56195299A priority Critical patent/JPS5896741A/ja
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to GB08227141A priority patent/GB2116208B/en
Priority to NL8203706A priority patent/NL8203706A/nl
Priority to FR8216472A priority patent/FR2517885B1/fr
Priority to DE19823237385 priority patent/DE3237385A1/de
Priority to KR8204586A priority patent/KR890003143B1/ko
Priority to IT68243/82A priority patent/IT1156088B/it
Publication of JPS5896741A publication Critical patent/JPS5896741A/ja
Priority to SG934/87A priority patent/SG93487G/en
Priority to MY920/87A priority patent/MY8700920A/xx
Priority to HK178/88A priority patent/HK17888A/xx
Publication of JPS6351377B2 publication Critical patent/JPS6351377B2/ja
Priority to US07/296,350 priority patent/US4885135A/en
Priority to US07/445,542 priority patent/US5071619A/en
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01021—Scandium [Sc]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01063—Europium [Eu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01064—Gadolinium [Gd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01065—Terbium [Tb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01067—Holmium [Ho]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0107—Ytterbium [Yb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/011—Groups of the periodic table
    • H01L2924/01105—Rare earth metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 この発明は、高い常温および高温引張強さを有し、特に
半導体素子組立に際して、チップ電極と外部リードとの
結線用として使用するのに適した高張力Ａｕ合金細線に
関するものである。
従来、一般にトランジスタ、ＩＣ，およびＬＳＩなどの
半導体素子の組立に際しては、チップ電極と外部リード
との結線に金線が使用されている。
一方近年の結線技術の向上に伴う高速度化、集積度の高
密化、さらに経済性などの面から、これに使用される金
線にも細線化および高強度化が要求されるようになって
いる。
しかし、現在実用に供されている金線（純金線）では、
とれを直径：Ｏ，Ｏ５，φ以下の細線とした場合、常温
および高温引張強さが比較的低いために、チップ電極と
外部リードとの加熱結線時あるいは線引加工時に切断し
やすいものであシ、上記の要望を満足することができな
いのが現状である。
そこで、本発明者等は、上述のような観点から、常温お
よび高温において高い引張強さく高張力）を有するＡｕ
合金細線を得べく研究を行なった結果、Ｌａ、　Ｃｅ、
　Ｐｒ、　Ｎｄ、　Ｓｍ、　Ｅｕ、　Ｇｄ、　Ｔｂ、　
Ｄｙ、　Ｈｏ、　Ｅｒ。
Ｔｍ、　Ｙｂ、　Ｌｕ　、　Ｓｃ　、およびＹからなる
希土類元素群のうちの１種または２種以上　０．０００
３〜０．０１００重量係を含有し、残シがＡ、ｕと不可
避不純物からなる組成を有するＡｕ合金は、高い常温お
よび高温引張強さを有し、したがって、これを直径：０
．０５ｍｍφ以下の細線に線引加工するに際しても切断
することがなく、またこの結果のＡｕ合金細線を半導体
素子の高速結線に用いても断線の発生がないという知見
を得たのである。
この発明は、上記知見にもとづいてなされたものであっ
て、上記の希土類元素群の含有量を０．０００３〜０．
０１００重量％に限定したのは、その含有量が０．００
０３重量％未満では所望の高引張強さを確保することが
できず、一方０．０１００重量％を越えて含有させると
、脆化がみられるようになって線引加工性などが劣化す
るようになる。という理由からである。
つぎに、この発明のＡｕ合金細線を実施例によシ具体的
に説明する。
実施例 通常の溶解法によυそれぞれ第１表に示される成分組成
をもったＡｕ合金溶湯を調製し、鋳造した後、公知の溝
型圧延機を用いて圧延し、引続いて線引加工を行なうこ
とによって、直径：０．０２５３− ｍｍφを有する本発明Ａｕ合金細線１〜５６をそれぞれ
製造した。
つぎに、この結果得られた本発明Ａｕ合金細線１〜５６
について、常温引張試験、および半導体素子の結線時に
さらされる条件に相当する温度２５０℃、保持時間：３
０秒の条件での高温引張試験を行ない、その試験結果を
第１表に合せて示した。なお、第１表には比較の目的で
同径の純金細線の試験結果も示した。
第１表に示される結果から、本発明Ａｕ合金細細線−５
６は、いずれも純金細線に比して高い常温および高温引
張強さを有していることが明らかである。
上述のように、この発明のＡｕ合金細線は、きわめて高
い常温および高温引張強さを有しているので、直径：０
．０５ｍｍφ以下の細線への線引加工に際しても切断す
ることがなく、また半導体素子の組立におけるチップ電
極と外部リードとの結線に用いた場合には、結線の高速
化可能に、集積度の高密化がはかれるなど工業上有用な
特性を有するのである。
出願人　　三菱金属株式会社 代理人　　富　　１）　和　夫

Claims (1)

  1. 【特許請求の範囲】 Ｌａ、　Ｃｅ、　Ｐｒ、　Ｎｄ、　Ｓｍ、　Ｅｕ、　Ｇ
    ｄ、　Ｔｂ、　Ｄｙ、　Ｈｏ、　Ｒｒ。 Ｔｍ、　Ｙｂ、　Ｌｕ　、　Ｓｃ、およびＹからなる希
    土類元素群のうち（７）１種またｌｄ２種以上：　０．
    ０００３〜０．０１００重量％を含有し、残シがＡｕと
    不可避不純物からなる組成を有することを特徴とする半
    導体素子結線用高張力Ａｕ合金細線。
JP56195299A 1981-12-04 1981-12-04 半導体素子結線用高張力ａｕ合金細線 Granted JPS5896741A (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP56195299A JPS5896741A (ja) 1981-12-04 1981-12-04 半導体素子結線用高張力ａｕ合金細線
GB08227141A GB2116208B (en) 1981-12-04 1982-09-23 Fine gold alloy wire for bonding of a semiconductor device
NL8203706A NL8203706A (nl) 1981-12-04 1982-09-24 Draad vervaardigd uit een goudlegering en halfgeleiderorgaan voorzien van een dergelijke draad.
FR8216472A FR2517885B1 (fr) 1981-12-04 1982-09-30 Fil d'alliage d'or fin pour connecter un dispositif a semi-conducteur
DE19823237385 DE3237385A1 (de) 1981-12-04 1982-10-08 Feingoldlegierungsdraht zum verbinden von halbleiterelementen
KR8204586A KR890003143B1 (ko) 1981-12-04 1982-10-12 반도체 소자 결선용 금합금 세선
IT68243/82A IT1156088B (it) 1981-12-04 1982-10-25 Filo sottile in lega d oro per il collegamento di un dispositivo a semiconduttore
SG934/87A SG93487G (en) 1981-12-04 1987-10-26 Fine gold alloy wire for bonding of a semiconductor device
MY920/87A MY8700920A (en) 1981-12-04 1987-12-30 Fine gold alloy wire for bonding of a semiconductor device
HK178/88A HK17888A (en) 1981-12-04 1988-03-03 Fine gold alloy wire for bonding of a semiconductor device
US07/296,350 US4885135A (en) 1981-12-04 1989-01-09 Fine gold alloy wire for bonding of a semi-conductor device
US07/445,542 US5071619A (en) 1981-12-04 1989-12-04 Fine gold alloy wire for bonding of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56195299A JPS5896741A (ja) 1981-12-04 1981-12-04 半導体素子結線用高張力ａｕ合金細線

Publications (2)

Publication Number Publication Date
JPS5896741A true JPS5896741A (ja) 1983-06-08
JPS6351377B2 JPS6351377B2 (ja) 1988-10-13

Family

ID=16338837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56195299A Granted JPS5896741A (ja) 1981-12-04 1981-12-04 半導体素子結線用高張力ａｕ合金細線

Country Status (1)

Country Link
JP (1) JPS5896741A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4885135A (en) * 1981-12-04 1989-12-05 Mitsubishi Kinzoku Kabushiki Kaisha Fine gold alloy wire for bonding of a semi-conductor device
US4938923A (en) * 1989-04-28 1990-07-03 Takeshi Kujiraoka Gold wire for the bonding of a semiconductor device
JPH0436430A (ja) * 1990-05-31 1992-02-06 Sumitomo Metal Mining Co Ltd ボンディングワイヤー
WO1994024323A1 (en) * 1993-04-22 1994-10-27 Nippon Steel Corporation Gold-alloy bonding wire
US5658664A (en) * 1993-04-08 1997-08-19 Nippon Steel Corporation Thin gold-alloy wire for semiconductor device
US6077366A (en) * 1995-04-07 2000-06-20 Ogasa; Kazuo Process for producing a high-purity hard gold alloy
WO2006078076A1 (ja) * 2005-01-24 2006-07-27 Nippon Steel Corporation 半導体素子接続用金線

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4885135A (en) * 1981-12-04 1989-12-05 Mitsubishi Kinzoku Kabushiki Kaisha Fine gold alloy wire for bonding of a semi-conductor device
US5071619A (en) * 1981-12-04 1991-12-10 Mitsubishi Kinzoku Kabushiki Kaisha Fine gold alloy wire for bonding of a semiconductor device
US4938923A (en) * 1989-04-28 1990-07-03 Takeshi Kujiraoka Gold wire for the bonding of a semiconductor device
JPH0436430A (ja) * 1990-05-31 1992-02-06 Sumitomo Metal Mining Co Ltd ボンディングワイヤー
US5658664A (en) * 1993-04-08 1997-08-19 Nippon Steel Corporation Thin gold-alloy wire for semiconductor device
WO1994024323A1 (en) * 1993-04-22 1994-10-27 Nippon Steel Corporation Gold-alloy bonding wire
CN1038853C (zh) * 1993-04-22 1998-06-24 新日本制铁株式会社 用于金属线焊接的金合金细线
US5989364A (en) * 1993-04-22 1999-11-23 Nippon Steel Corporation Gold-alloy bonding wire
US6077366A (en) * 1995-04-07 2000-06-20 Ogasa; Kazuo Process for producing a high-purity hard gold alloy
WO2006078076A1 (ja) * 2005-01-24 2006-07-27 Nippon Steel Corporation 半導体素子接続用金線
JP2006229202A (ja) * 2005-01-24 2006-08-31 Nippon Steel Corp 半導体素子接続用金線
US7830008B2 (en) 2005-01-24 2010-11-09 Nippon Steel Materials Co., Ltd. Gold wire for connecting semiconductor chip

Also Published As

Publication number Publication date
JPS6351377B2 (ja) 1988-10-13

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