JPH0520493B2 - - Google Patents

Info

Publication number
JPH0520493B2
JPH0520493B2 JP59139108A JP13910884A JPH0520493B2 JP H0520493 B2 JPH0520493 B2 JP H0520493B2 JP 59139108 A JP59139108 A JP 59139108A JP 13910884 A JP13910884 A JP 13910884A JP H0520493 B2 JPH0520493 B2 JP H0520493B2
Authority
JP
Japan
Prior art keywords
wire
conductivity
ball
copper
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59139108A
Other languages
English (en)
Other versions
JPS6120693A (ja
Inventor
Shigemi Yamane
Koichiro Atsumi
Tetsuo Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59139108A priority Critical patent/JPS6120693A/ja
Publication of JPS6120693A publication Critical patent/JPS6120693A/ja
Publication of JPH0520493B2 publication Critical patent/JPH0520493B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】
〔発明の技術分野〕 本発明は、銅系ボンデイングワイヤーに関す
る。 〔発明の技術的背景及びその問題点〕 ICやLSI等の半導体素子の内部では、例えば、
図面に示すように、半導体チツプ１及びリードフ
インガー２が設けられており、これらを線径10〜
100μ程度のボンデイングワイヤー３で結ぶ構造
となつている。 このボンデイングワイヤー３の接合方法として
は、まずワイヤーの先端をボール状に加熱溶融さ
せ、次にこのボール状の先端を半導体チツプ１に
圧接し、更に弧を描くようにワイヤーを延ばし、
300〜350℃に加熱されたリードフインガー２にワ
イヤーの一部を再度圧接し、切断することによ
り、半導体チツプ１とリードフインガー２とを結
線するものである。 この種のボンデイングワイヤーとして導電性、
ワイヤー伸び、ワイヤー強度、半導体チツプとの
接合強度（以下ボール接合強度と称す。）及びボ
ール形成性が要求されており、従来から主に金線
が使用されている。 しかし、近年、価格及び導電性の点からボンデ
イングワイヤーとして、銅線を用いる試みがなさ
れているが、銅線を用いて熱圧接を行なうと、ボ
ール接合強度が低下する場合がしばしばあり、一
方、ボール接合性を改善しようとすると、導電性
が低下し、双方の特性を満足する銅リードワイヤ
ーが得られなかつた。 〔発明の目的〕 本発明は、ボール接合強度が良好でかつ導電性
が良好な銅リードワイヤーを提供することを目的
とする。 〔発明の概要〕 本発明者らは、ボンデイングワイヤーについて
鋭意研究した結果、ボンデイング強度の低下は、
主に形成されたボール中のガスにより生じること
を見い出した。 即ち、半導体チツプ上にこのボールが圧接され
た際、ガスによる空洞が接合部に位置し、接合強
度を低下させること及びこの現象は特に銅線で発
生しやすいことを見い出した。 本発明は、これらの知見をもとに完成されたも
のである。 本発明は、Mg，Ca，希土類元素、Ti，Hf，
Ｖ，Nb，Ta，Ni，Pd，Pt，Au，Cd，Ｂ，Al，
In，Si，Ge，Pb，Ｐ，Sb，Bi，Se及びTeから
選択された１種又は２種以上の元素を0.001〜２
重量％含有し、残部が実質的に銅であるボンデイ
ングワイヤーを提供する。 即ち、これら添加元素は、合金中のＨ，Ｏ，
Ｎ，Ｃを固定し、H2，O2，N2及びCOガスの発
生を抑制する。 しかし、これらの添加量が多すぎると、導電性
を低下させ、一方少なすぎると、効果が生じにく
い。したがつて、上記添加元素の成分範囲は
0.001〜２重量％、更には0.01〜１重量％が好ま
しい。 上記添加元素のうちでも、Mg，Ｙ，ランタノ
イド元素及びHfは、導電性をあまり低下させず、
ガス発生防止効果が高い。しかしこれらの添加量
も多すぎると、導電性を低下させ、一方少なすぎ
ると効果が生じにくい。したがつて、その成分範
囲は0.01〜１重量％、更には0.05〜0.2重量％が好
ましい。なお、本発明のワイヤーは被覆されて用
いられてもよい。 以上述べたワイヤーの製造方法を次に述べる。
まず、成分元素を添加して溶解鋳造してインゴツ
トを得、次にこのインゴツトを700〜800℃で熱間
加工し、その後900〜960℃で熱処理し、急冷後、
60％以上の冷間加工を施し、400〜600℃で熱処理
を施す。それにより所望のワイヤーが得られる。 〔発明の実施例〕 本発明の実施例について説明する。第１表に示
す成分のリードワイヤーを製造し、その特性とし
て、導電性、初期ボール硬度、ワイヤーの伸び、
ワイヤー強度、ボール接合強度及びボール形成性
を測定した。 初期ボール硬度は、ボール圧着時の硬度をい
い、硬度が低いほど、圧着性は良好となる。 又、ワイヤーの伸びは、ワイヤーが破断する迄
の伸びをいい、伸びが大きいほど、断線率が低
い。 又、ボール接合強度は、熱圧着されているリー
ドワイヤーの接合部に、つり針状のカギをかけ、
真横に引つぱつて、接合部をせん断破壊させるま
での荷重（gr）を測定することにより、得られ
る。 又、ボール形成性は、ワイヤーの先端がボール
状に溶融した際、酸化するかどうか、空洞ができ
るかどうか、ボールの径のバラツキが大きいか小
さいかという事を測定することにより、判断され
る。 まず、導電性に関しては、実施例(1)〜(5)及び比
較例(1)がAu線より高い導電性を示し、非常に有
効である。 又、初期ボール硬度に関しては、実施例(1)〜(5)
及び比較例(5)がビツカース90以下を示し、実用的
である。 又、ワイヤーの伸びに関しては、実施例(1)〜(5)
及び比較例(1)，(3)がAu線より大きい伸びを示し、
有用である。 又、ワイヤー強度に関しては、実施例(1)〜(5)及
び比較例(1)〜(4)がAu線と同等あるいはそれより
大きい強度を示し、有用である。 又、ボール接合強度に関しては、実施例(1)〜(5)
及び比較例(2)，(3)，(5)は接合強度が65（gf）以上
であり、実用的である。 又、ボール形成性は、比較例(4)以外は、すべて
良好である。 以上の各特性を総合的に考慮すると、本発明の
実施例(1)〜(5)は比較例(1)〜(5)に比べて、優れてい
る。
〔発明の効果〕
以上説明したように、本発明のリードワイヤー
は、Mg，Ca，希土類元素、Ti，Hf，Ｖ，Nb，
Ta，Ni，Pd，Pt，Au，Cd，Ｂ，Al，In，Si，
Ge，Pb，Ｐ，Sb，Bi，Se及びTeから選択され
た１種又は２種以上の元素を0.001〜２重量％含
有させることにより、ボール接合強度が良好でか
つ導電性が良好な銅系リードワイヤーを提供でき
る。
【図面の簡単な説明】
図面は、半導体素子の一部切り欠き斜視図であ
る。 １……半導体チツプ、２……リードフインガ
ー、３……ボンデイングワイヤー、４……樹脂モ
ールド。

Claims (1)

  1. 【特許請求の範囲】 １ Mg，Ca，希土類元素，Ti，Hf，Ｖ，Nb，
    Ta，Ni，Pd，Pt，Au，Cd，Ｂ，Al，In，Si，
    Ge，Pb，Ｐ，Sb，Bi，Se及びTeから選択され
    た１種又は２種以上の元素を0.001〜２重量％含
    有し、残部が実質的に銅であるボンデイングワイ
    ヤー。 ２ Mg，Ｙ，ランタノイド元素，Hfから選択さ
    れた１種又は２種以上の元素を0.01〜１重量％含
    有し、残部が実質的に銅である特許請求の範囲第
    １項に記載のボンデイングワイヤー。
JP59139108A 1984-07-06 1984-07-06 ボンデイングワイヤ− Granted JPS6120693A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59139108A JPS6120693A (ja) 1984-07-06 1984-07-06 ボンデイングワイヤ−

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59139108A JPS6120693A (ja) 1984-07-06 1984-07-06 ボンデイングワイヤ−

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6095481A Division JP2501303B2 (ja) 1994-04-11 1994-04-11 半導体装置

Publications (2)

Publication Number Publication Date
JPS6120693A JPS6120693A (ja) 1986-01-29
JPH0520493B2 true JPH0520493B2 (ja) 1993-03-19

Family

ID=15237669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59139108A Granted JPS6120693A (ja) 1984-07-06 1984-07-06 ボンデイングワイヤ−

Country Status (1)

Country Link
JP (1) JPS6120693A (ja)

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JPS6199645A (ja) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS6199646A (ja) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS6280241A (ja) * 1985-10-01 1987-04-13 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPH0785483B2 (ja) * 1986-07-15 1995-09-13 株式会社東芝 半導体装置
JPH0785484B2 (ja) * 1986-07-16 1995-09-13 株式会社東芝 半導体装置
JPH0785485B2 (ja) * 1986-07-23 1995-09-13 株式会社東芝 半導体装置
JPS6364211A (ja) * 1986-09-05 1988-03-22 古河電気工業株式会社 銅細線とその製造方法
JPS63310932A (ja) * 1987-06-11 1988-12-19 Kurasawa Kogaku Kogyo Kk 銅合金
JPS643903A (en) * 1987-06-25 1989-01-09 Furukawa Electric Co Ltd Thin copper wire for electronic devices and manufacture thereof
US6608284B1 (en) 2000-05-17 2003-08-19 Illinois Tool Works Inc. Weld wire with enhanced slag removal
JP2006021711A (ja) 2004-07-09 2006-01-26 Honda Motor Co Ltd 車両用空調装置
JP4705078B2 (ja) * 2006-08-31 2011-06-22 新日鉄マテリアルズ株式会社 半導体装置用銅合金ボンディングワイヤ
US8610291B2 (en) 2006-08-31 2013-12-17 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
JP4691533B2 (ja) * 2006-08-31 2011-06-01 新日鉄マテリアルズ株式会社 半導体装置用銅合金ボンディングワイヤ
JP5074773B2 (ja) * 2007-01-10 2012-11-14 住友電気工業株式会社 銅合金およびその製造方法ならびに銅合金を用いた電線・ケーブル
JP5270467B2 (ja) * 2009-06-18 2013-08-21 タツタ電線株式会社 Ｃｕボンディングワイヤ
WO2010150814A1 (ja) 2009-06-24 2010-12-29 新日鉄マテリアルズ株式会社 半導体用銅合金ボンディングワイヤ
JP5550369B2 (ja) 2010-02-03 2014-07-16 新日鉄住金マテリアルズ株式会社 半導体用銅ボンディングワイヤとその接合構造
WO2011129256A1 (ja) * 2010-04-14 2011-10-20 タツタ電線株式会社 ボンディングワイヤ
CN101850481B (zh) * 2010-06-22 2012-03-07 哈尔滨工业大学 一种用于紫铜厚大构件熔化焊的铜合金焊丝及其制备方法
SG190480A1 (en) * 2011-12-01 2013-06-28 Heraeus Materials Tech Gmbh 3n copper wire with trace additions for bonding in microelectronics device
SG190479A1 (en) * 2011-12-01 2013-06-28 Heraeus Materials Tech Gmbh Secondary alloyed 1n copper wire for bonding in microelectronics device
CN102560184B (zh) * 2012-01-17 2013-09-18 宁波敖达金属新材料有限公司 无铅易切削高导电率的钙铜材料
KR20180105740A (ko) * 2014-04-21 2018-09-28 신닛테츠스미킹 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
JP5937770B1 (ja) * 2015-05-26 2016-06-22 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
WO2016189752A1 (ja) 2015-05-26 2016-12-01 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
TWI550639B (zh) * 2015-05-26 2016-09-21 Nippon Micrometal Corp Connecting wires for semiconductor devices
SG11201604432SA (en) 2015-06-15 2017-01-27 Nippon Micrometal Corp Bonding wire for semiconductor device
US10468370B2 (en) 2015-07-23 2019-11-05 Nippon Micrometal Corporation Bonding wire for semiconductor device
WO2017221434A1 (ja) * 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
JP6710141B2 (ja) * 2016-10-14 2020-06-17 田中電子工業株式会社 ボールボンディング用銅合金線
CN106514044A (zh) * 2016-11-30 2017-03-22 安徽华众焊业有限公司 铜基钎焊膏
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