WO2011129256A1 - ボンディングワイヤ - Google Patents

ボンディングワイヤ Download PDF

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Publication number
WO2011129256A1
WO2011129256A1 PCT/JP2011/058786 JP2011058786W WO2011129256A1 WO 2011129256 A1 WO2011129256 A1 WO 2011129256A1 JP 2011058786 W JP2011058786 W JP 2011058786W WO 2011129256 A1 WO2011129256 A1 WO 2011129256A1
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WIPO (PCT)
Prior art keywords
wire
coating layer
core material
bonding
added
Prior art date
Application number
PCT/JP2011/058786
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English (en)
French (fr)
Inventor
長谷川　剛
Original Assignee
タツタ電線株式会社
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Publication date
Application filed by タツタ電線株式会社 filed Critical タツタ電線株式会社
Priority to JP2012510635A priority Critical patent/JPWO2011129256A1/ja
Priority to CN2011800188602A priority patent/CN102884615A/zh
Publication of WO2011129256A1 publication Critical patent/WO2011129256A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
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    • H01L2924/207—Diameter ranges
    • H01L2924/20751—Diameter ranges larger or equal to 10 microns less than 20 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns

Definitions

  • the present invention relates to a bonding wire for connecting an electrode on an integrated circuit element such as an IC, LSI, transistor or the like to a conductor wiring of a circuit wiring board such as a lead frame, a ceramic substrate, or a printed circuit board by a ball bonding method, and its manufacture. It is about the method.
  • connection method by this kind of ball bonding method is generally in the form shown in FIGS. 1A to 1H, and the wire W shown in FIG. 1A is inserted into the capillary 10a and a ball is attached to the tip thereof. From the state where (FAB: Free Air Ball) b is formed, the clamp 10b is opened, and the capillary 10a is lowered toward the electrode a of the integrated circuit element. At this time, the ball (FAB) b is captured in the capillary 10a and bonded to the electrode a.
  • (FAB: Free Air Ball) b Free Air Ball
  • the capillary 10a grips the ball b and applies heat, weight, and ultrasonic waves to the ball b, whereby the ball b and the electrode a Solid-phase bonding is performed to form a 1st bond and adhere to the electrode a (1st bonding, FIG. 1B).
  • the capillary 10a moves up to a certain height (FIG. (C)) and then moves to a position directly above the conductor wiring c (FIGs. (D) to (e)).
  • a special movement is performed on the capillary 10a so that the wire W is attached with a “string” (see the solid line from the chain line in FIG. 4D).
  • Capillary 10a that reaches directly above the conductor wiring c descends toward the conductor wiring c and presses the wire W against the conductor wiring (2nd target) c ((e) to (f) in the figure). At the same time, heat, weight, and ultrasonic waves are applied to the pressed portion, thereby deforming the wire W, and stitches for joining the wire W onto the conductor wiring c, and a tail for securing the tail in the next step. A bond is formed (2nd junction, FIG. 1 (f)).
  • the capillary 10a rises with the wire W remaining, and after securing a tail of a certain length at the tip of the capillary 10a, the clamp 10b is closed (by grabbing the wire W), and the tail The wire W is torn off from the bond portion (FIG. 1 (g)).
  • the capillary 10a stops when it rises to the required height, and a high voltage is applied to the tip of the wire W secured at the tip of the capillary 10a with the discharge rod g to discharge (discharge) the spark.
  • the wire W is melted, and the melted wire material becomes a spherical ball b by the surface tension and hardens (FIG. 1 (h)).
  • a gold wire is mainly used as the bonding wire W.
  • an inexpensive copper wire having a copper purity of 99.9% by mass or more (3N) has recently been used. It is made to use.
  • a core material 1 made of copper wire is coated with an oxidation resistant metal 2 as shown in FIG. Is used.
  • the coating metal (coating layer) 2 gold (Au), platinum (Pt), palladium (Pd), silver (Ag), nickel (Ni) or the like is employed (Patent Documents 1 to 3).
  • the ball b In the bonding wire W made of a metal-coated copper wire, the ball b needs to be made smaller with the miniaturization of integrated circuit elements due to the recent miniaturization of electronic components.
  • the diameter L is preferably 50 ⁇ m or less (paragraph 0009 in Patent Document 1).
  • the ball b when the ball b is in a downward bowl shape (reverse conical shape) in connection to the electrode a of the integrated circuit element, the electrode b is pressed by the sharp end of the ball b when the ball b is pressed against the electrode a.
  • the ball b is preferably a true sphere as much as possible.
  • the thickness t of the covering layer 2 is set to 0.001 or less of the core wire diameter (Patent Document 1, Claim 1), and the thickness t of the covering layer 2 is set to 0.001 to The thickness is set to 0.02 ⁇ m (Claim 1 of Patent Document 3), or the coating layer 2 is formed of an oxidation-resistant metal having a melting point higher than that of copper of the core material 1 (paragraph 0014 of Patent Document 2).
  • phosphorus (P), boron (B), bismuth (Bi), tin (Sn), silver (Ag), and manganese (Mg) are added to the copper of the core material 1, and a peel test (peeling test) is performed.
  • a technique for increasing the sphericity of a ball by increasing the breaking elongation of the ball and synergistic with the oxidation-resistant metal forming the coating layer 2 by an additive metal such as P when the ball is melted is disclosed ( Patent Document 4, paragraph 0055).
  • the bonding wire W coated with a copper wire with an oxidation-resistant metal has been well-received in various ways and has been well received.
  • the speed of work based on the recent cost reduction has been increased.
  • further work stability for example, the following continuous bonding property, FAB stability, and the like are required.
  • P or the like can be selected.
  • sparking during FAB formation can be performed in a low current and in a short time.
  • the P or the like is added, the oxidation resistance may be deteriorated.
  • the capillary 10a shown in FIGS. 1E to 1F descends toward the conductor wiring c, and the wire W is transferred to the conductor wiring (2nd target).
  • the cover layer 2 may be cracked along with the bending. If the cover layer 2 is cracked, the oxidation resistance of the cracked portion is deteriorated, and a problem arises in the formation of the true sphere when the ball b is formed in FIG.
  • the first object of the present invention is to increase the electric resistance value of the bonding wire W and prevent the deterioration of the oxidation resistance, and the second problem is to suppress the deterioration of the oxidation resistance as much as possible even if the crack occurs. To do.
  • the present invention first adds P among P, B, Bi, Sn, Ag, and Mg, which are considered to increase the electric resistance value.
  • P increases the electrical resistance value
  • the FAB can be formed by supplying the spark during FAB formation stably at a low current for a short time.
  • P has processing heat stability and is generally sold as a Cu—P alloy, so that it is easy to obtain and it is easy to obtain a required addition amount.
  • B is poor in thermal stability, addition is difficult, Bi is not preferable from the environmental point of view, Sn has a problem that it can be wrinkled by dissolution, and Ag is easy to oxidize.
  • Mg has a problem that it is difficult to add Mg due to its low vapor pressure.
  • the oxidation resistant material Au, Pt, Pd, Ag, Ni, Fe (iron), Cr (chromium), Mn, and the like can be considered. Of these, Ag, Ni, Fe, and Mn are easy. In addition, P and a compound (Ag—P, Ni—P, Fe—P, Cr—P, Mn—P) are produced, so even if added, they do not contribute to the improvement of oxidation resistance. Therefore, at least one or more of the platinum group (Pt group) of Au or Ru, Rh, Pd, Os, Ir, and Pt that does not combine with P even when melted is added. At this time, 1 type is more preferable from the ease of addition of a required amount, and it is preferable to use at most 2 types. Thus, if it is Au or Pt group which does not combine with P, while improving the electrical resistance value by addition of P, the oxidation resistance improvement by addition of Au etc. can be aimed at.
  • the addition amount of P and the addition amount of Au or the like may be appropriately determined by experiments or the like as long as the effect can be obtained.
  • the addition amount of Au is 2 to 250 ppm, such as Au. Is 1 to 100 ppm in total.
  • P is less than 2 ppm, an improvement in electric resistance cannot be expected and the effect of forming a ball at a low current and in a short time may not be obtained.
  • the function as a bonding wire for transmitting a signal from the element (electrode a) to the lead (conductor wiring c) may be hindered, and a crack (chip crack) may occur in the electrode a at the time of the first bonding.
  • the strength of the wire W becomes too high, which may cause chip cracks at the time of the first bonding, and if it is less than 1 ppm, the oxidation resistance effect may not be expected.
  • the range in which ball formation is particularly stable is 10 ppm or more.
  • a more preferable range of the addition amount of P and the addition amount of Au or the like is 50 ppm or less for P and 1 ppm or more and 50 ppm or less in total for Au or the like.
  • a specific configuration of the present invention is a bonding wire having a wire diameter of 12 ⁇ m or more and 50.8 ⁇ m or less for connecting an electrode of an integrated circuit element and a conductor wiring of a circuit wiring board by a ball bonding method, and is an Au or Pt group
  • the bonding wire is made of copper having a purity of 99.99% by mass or more.
  • the wire diameter L of the bonding wire W is set to 50.8 ⁇ m or less in the above-mentioned Patent Document 1 in which the diameter L is set to 50 ⁇ m or less, but if it is 50.8 ⁇ m or less, it is 50 ⁇ m or less. This is because the above-mentioned ball b can be made even smaller.
  • the lower limit of the wire diameter L is set to 12 ⁇ m or more because if it is less than 12 ⁇ m, it becomes difficult for an operator to pass the wire W through the capillary 10a before bonding, and workability is deteriorated.
  • the reason why the copper purity of the core material 1 is 99.9% by mass (3N) or more is to ensure high conductivity of copper.
  • the present invention first adds P to the core material in order to increase the electric resistance value, and at least one or more of Au or Pt group in order to improve oxidation resistance.
  • the FAB can be formed stably at a low current and in a short time, and the core material itself is made oxidation resistant.
  • the addition of P increases the electric resistance value without causing deterioration of oxidation resistance, and stably supplies the spark during FAB formation at a low current and in a short time. By doing so, the FAB can be formed.
  • an oxidation resistant Pt or Pd thickness t of 0.02 to 0.09 ⁇ m was formed on the entire outer periphery of the core material. Since Pt or Pd does not form a compound with P as described above, the compound is not formed even when the coating layer is dissolved, and the electrical resistance value and the oxidation resistance are improved. Moreover, since Pd and Pt have higher melting points than copper, the sphericity of the ball b can be expected to increase. In addition, even if a crack occurs in the wire (coating layer) at the time of the 2nd bonding or the like, since the crack is usually slight, the addition amount of Au or the like into the core material 1 can sufficiently suppress the oxidation. To do.
  • a bonding wire having a wire diameter of 12 ⁇ m or more and 50.8 ⁇ m or less for connecting an electrode of an integrated circuit element and a conductor wiring of a circuit wiring board by a ball bonding method, the core material of which is In addition, at least one or more of gold or platinum group is added to improve oxidation resistance, and P is added to improve electrical resistance, and is made of copper with a purity of 99.9% by mass or more.
  • the bonding wire has a structure in which an oxidation-resistant Pt or Pd coating layer having a thickness of 0.02 to 0.09 ⁇ m is formed on the entire surface.
  • the wire diameter is 12 ⁇ m or more and 50.8 ⁇ m or less and the purity is 99.9% by mass or more for the same reason as described above.
  • the thickness t of the coating layer 2 is decreased, the hardness of the ball b is decreased, and the possibility of damage to the Si chip (electrode a) is decreased.
  • the degree to which copper is exposed is increased, and only the stitch bondability as high as that of a copper wire not having the coating layer 2 can be exhibited.
  • the thickness t of the coating layer 2 shall be 0.02 micrometer or more from the experimental result of the Example and a comparative example.
  • the thickness t is set to 0.04 ⁇ m or more from the experimental results of the continuous bonding property.
  • the stage temperature is lowered, the load required for stitch bond bonding increases, and when the thickness t of the coating layer 2 is in the range of 0.02 ⁇ m or more to less than 0.04 ⁇ m, the degree of exposure of the core copper increases and the continuous bonding property increases. This is because may be damaged.
  • the coating layer 2 is thick, the hardness of the ball b increases and the possibility of damage to the Si chip (electrode a) increases. For this reason, the thickness t of the coating layer 2 shall be 0.09 micrometer or less from the experimental result of a postscript Example and a comparative example.
  • the thickness t of the coating layer 2 is 0.04 ⁇ m or more, machine troubles are reduced even at a stage temperature of 150 ° C.
  • Pd is adopted for the coating layer 2 and the thickness t of the coating layer 2 is 0.05 ⁇ m. It has been confirmed that no machine trouble occurs even when the stage temperature is set at a lower temperature of 130 ° C. This is considered to be based on the synergistic effect that the difference in melting time between Cu and Pd is small in the case of the palladium coating layer 2 and it is more likely to become a true sphere.
  • the copper purity of the core material is 99.99 mass% (4N) or higher, and further 99.999 mass% (5N) or higher, the possibility of damage to the Si chip (electrode a) is reduced. This is because the FAB hardness can be further reduced by setting the copper purity to 99.99% by mass or more, and further to 99.999% by mass or more.
  • the entire outer periphery of the core material 1 made of copper having a purity of 99.9% by mass or more is coated with one or more of Pt and Pd.
  • the wire is drawn to a wire diameter of 12 ⁇ m to 50.8 ⁇ m, and the tensile elongation is 8% or more. In this way, a tempering heat treatment is performed so that the thickness t of the coating layer 2 is 0.02 to 0.09 ⁇ m.
  • the coating layer 2 is formed by a known means such as electrolytic plating, electroless plating, vapor deposition, etc.
  • the wire W is predetermined by sequentially passing a copper rod having a large wire diameter through a tool called a die. Therefore, the coating layer 2 is formed by the above means with an appropriate wire diameter in the middle of this process.
  • the wire diameter of the core material 1 at the time of coating is determined by workability and cost, but is generally 0.2 to 0.8 mm due to the limitation of the manufacturing apparatus.
  • a coated wire coated with a metal such as Pd on the entire outer surface is subjected to a diffusion heat treatment at 200 to 500 ° C.
  • the thickness t of the coating layer 2 can be set to 0.02 to 0.09 ⁇ m by performing a tempering heat treatment so that the wire is drawn to 50.8 ⁇ m or less and further has a tensile elongation of 8% or more. The reason why the tensile elongation is 8% or more is to improve the stitch bondability and obtain more stable bonding properties.
  • the above copper added with the required amount of P can be adopted.
  • the step of forming the covering layer 2 is omitted.
  • the FAB since the electrical resistance value is increased as described above, the FAB can be stably formed in a low current and in a short time, and oxidation can be suppressed as much as possible. Moreover, in the wire provided with the coating layer, even if a crack occurs in the coating layer 2, it is possible to suppress the deterioration of oxidation resistance due to the crack as much as possible.
  • Examples 1 to 20 and Comparative Examples 1 to 12 shown in Table 1 are manufactured, and the bonding wire W has a continuous bonding property, HTST (High Temperature Storage Test), FAB stability, and a Si chip (electrode a) ) Was tested (confirmed) (Table 2). That is, first, an 8 mm diameter copper alloy wire was prepared by adding required ppm of Au, Ru, Rh, Pd, Os, Ir, Pt, and P to pure copper (4N) having a copper purity of 99.99 mass%. The alloy wire was coated with Pd and Pt by an electrolytic plating method, the coated wire was rewound, passed through an annealing furnace, and then wound again with a winding reel to perform continuous diffusion heat treatment.
  • the annealing furnace an electric furnace having a furnace core tube having a furnace length of 1 m was used, and nitrogen gas was allowed to flow through the furnace core tube.
  • the furnace temperature was 500 ° C. to 800 ° C.
  • the temperature of the coated wire (copper alloy wire) was 200 to 500 ° C.
  • the traveling speed of the coated wire was 5 to 60 m / min.
  • the wire is drawn to a wire diameter of 15 to 50 ⁇ m and further tempered so that the tensile elongation is 8% or more.
  • Heat treatment was performed to obtain bonding wires W (Examples 3 to 15 and Comparative Examples 1 to 10) having a thickness t of the coating layer 2 of 0.011 to 0.134 ⁇ m.
  • Table 2 shows the results of the following evaluation on each bonding wire W.
  • Depth analysis was performed by Auger spectroscopy. In the depth analysis, the concentration of Pd or Pt was measured while sputtering with Ar ions, and the distance from the surface layer was calculated in terms of SiO2. The thickness of the surface coating layer was defined as the thickness of the surface coating layer up to a point at which the concentration was half the measured value of the Pd or Pt concentration of the surface layer (see FIG. 3). [Analysis of additive elements] ICP analysis was used.
  • A Evaluation of continuous bonding property is A at both 200 ° C. and 150 ° C., and other evaluations are also A.
  • B Evaluation of continuous bonding property is A at 200 ° C., B at 150 ° C., and other evaluations. Evaluation is also A.
  • C Evaluation of continuous bonding property is C at 130 ° C., and other evaluation is A or B.
  • D At least one of D. Among these A, B, C, D, A and B were good and C could be used.
  • the FAB is a stable result in a perfect spherical shape (Examples 1 to 20, Comparative Examples 1 to 5, 7, 8, 10 to 12). ). Further, when the addition amount is 10 ppm or more, the result is very stable and the FAB shape is good (Examples 1, 3 to 9, 11 to 20, Comparative Examples 1 to 5, 7, 11, 12). On the other hand, when the addition amount is less than 2 ppm, the FAB shape is deteriorated (Comparative Examples 6 and 9). When the addition amount exceeds 50 ppm, the coating layer thickness t is 0.09 ⁇ m or less and the addition amount of Au or Pt group is small.

Abstract

　被覆層（２）に亀裂が生じても芯材（１）の耐酸化性の劣化を極力抑制する。集積回路素子の電極（ａ）と回路配線基板の導体配線（ｃ）をボールボンディング法によって接続するための線径（Ｌ）１２μｍ以上５０.８μｍ以下のボンディングワイヤ（Ｗ）である。９９．９９質量％以上の銅からなる芯材（１）にＡｕ又は白金族の少なくとも１種以上を耐酸化性を向上するために添加し、Ｐを電気抵抗向上のために添加し、その芯材（１）の外周全面に耐酸化性のＰｔ又はＰｄの厚み（ｔ）０．０２～０．０９μｍの被覆層（２）を形成したものとする。このボンディングワイヤは、Ｐの添加によって電気抵抗値が高くなり、スパークが低電流・短時間で、安定したＦＡＢが形成できる。このとき、芯材（１）にＡｕ又は白金族が添加されているため、Ｐと化合物を生成せず、耐酸化性の向上効果を担保する。このため、その被覆層に亀裂が生じても、その亀裂による芯材の耐酸化性の劣化を極力抑制する。

Description

ボンディングワイヤ
　この発明は、ＩＣ、ＬＳＩ、トランジスタ等の集積回路素子上の電極と、リードフレーム、セラミック基板、プリント基板等の回路配線基板の導体配線とをボールボンディング法によって接続するためのボンディングワイヤ及びその製造方法に関するものである。
　この種のボールボンディング法による接続方法は、図１（ａ）～（ｈ）に示す態様が一般的であり、同図（ａ）に示す、ワイヤＷがキャピラリー１０ａに挿通されてその先端にボール（ＦＡＢ：Ｆｒｅｅ  Ａｉｒ  Ｂａｌｌ）ｂが形成された状態から、クランプ１０ｂが開いて、キャピラリー１０ａが集積回路素子の電極ａに向かって降下する。このとき、ボール（ＦＡＢ）ｂはキャピラリー１０ａ内に捕捉され、電極ａにボンディングされる。
　ターゲットである電極ａにボールｂが接触すると（キャピラリー１０ａが電極ａに至ると）キャピラリー１０ａがボールｂをグリップし、ボールｂに熱・加重・超音波を与え、それによってボールｂと電極ａが固相接合され、１ｓｔボンドが形成されて電極ａと接着する（１ｓｔ接合、図１（ｂ））。
　１ｓｔボンドが形成されれば、キャピラリー１０ａは、一定高さまで上昇した後（同図（ｃ））、導体配線ｃの真上まで移動する（同図（ｄ）～（ｅ））。このとき、安定したループを形成するため、キャピラリー１０ａに特殊な動きをさせてワイヤＷに「くせ」を付ける動作をする場合がある（同図（ｄ）の鎖線から実線参照）。
　導体配線ｃの真上に至ったキャピラリー１０ａは、導体配線ｃに向かって降下し、ワイヤＷを導体配線（２ｎｄターゲット）ｃに押付ける（同図（ｅ）～（ｆ））。これと同時に、その押付け部位に熱・加重・超音波を与え、それによってワイヤＷを変形させ、ワイヤＷを導体配線ｃ上に接合させるためのステッチボンドと、次のステップでテイルを確保するテイルボンドを形成する（２ｎｄ接合、図１（ｆ））。
　その両ボンドを形成した後、キャピラリー１０ａはワイヤＷを残したまま上昇し、キャピラリー１０ａの先端に一定の長さのテイルを確保した後、クランプ１０ｂを閉じて（ワイヤＷをつかんで）、テイルボンドの部分からワイヤＷを引きちぎる（図１（ｇ））。
　キャピラリー１０ａは、所要の高さまで上昇すると停止し、そのキャピラリー１０ａの先端に確保されたワイヤＷの先端部分に、放電棒ｇでもって高電圧を掛けて火花を飛ばし（放電し）、その熱でワイヤＷを溶かし、この溶けたワイヤ素材は表面張力によって球状に近いボールｂになって固まる（図１（ｈ））。
　以上の作用で一サイクルが終了し、以後、同様な作用によって、電極ａと導体配線ｃのボールボンディング法による接続がなされる。
　このボールボンディング法による接続において、ボンディングワイヤＷには、金線が主に使用されるが、金は高価であるため、近年、銅純度９９．９質量％以上（３Ｎ）の安価な銅線を使用することが行われている。そのとき、銅は裸のままでは、表面の酸化が起こり易いことから、その酸化が問題となる場合、図２に示すように、銅線からなる芯材１に耐酸化金属２を被覆したものが使用されている。
　その被覆金属（被覆層）２としては、金（Ａｕ）、白金（Ｐｔ）、パラジウム（Ｐｄ）、銀（Ａｇ）、ニッケル（Ｎｉ）等が採用されている（特許文献１～３）。
特開２００３－１３３３６１号公報 特開２００４－６４０３３号公報 特開２００７－１２７７６号公報 特開２００９－１４０９５３号公報
　この金属被覆の銅線からなるボンディングワイヤＷにおいて、近年の電子部品の小型化等による集積回路素子間の極小化に伴い、上記ボールｂもより小さくする必要から、ボンディングワイヤＷにも小径のものが望まれ、そのためには、その径Ｌを５０μｍ以下とするのが好ましいとされている（特許文献１段落０００９）。
　また、集積回路素子の電極ａへの接続において、ボールｂが下向き槍状（逆円錐状）になっていると、上記ボールｂの電極ａへの押付け時、そのボールｂの尖鋭端によって電極ａを損傷させる恐れがあるため、ボールｂはできるだけ、真球であることが好ましい。そのボールｂの真球度を高めるために、上記被覆層２の厚みｔを芯線径の０．００１以下としたり（特許文献１請求項１）、同じく被覆層２の厚みｔを０．００１～０．０２μｍとしたり（特許文献３請求項１）、芯材１の銅よりも高融点の耐酸化金属で被覆層２を形成したりしている（特許文献２段落００１４）。
　さらに、有機基板をベースにしたＢＧＡ(Ｂａｌｌ  Ｇｒｉｄ  Ａｒｒａｙ)などでは加熱温度(ステージ温度)を高くすると、反りが発生してボンディング性が著しく悪化する。このため、上記ワイヤＷと電極ａ又は導体配線ｃとの接合時の加熱温度（ステージ温度）を低く、例えば、１５０℃程度にしても、十分な接合強度を担保するための種々の工夫、例えば、熱処理後に伸線する加工等もされている（特許文献３段落００２０、同００５４等）。
　また、芯材１の銅に、リン（Ｐ）、ボロン（Ｂ）、ビスマス（Ｂｉ）、錫（Ｓｎ）、銀（Ａｇ）、マンガン（Ｍｇ）を添加して、ピール試験（剥離試験）での破断伸びを増加させると共に、ボールの溶融時にそのＰ等の添加金属が被覆層２を形成する耐酸化性金属との相乗効果によって、ボールの真球性を向上させる技術も開示されている（特許文献４段落００５５）。
　以上のように、耐酸化金属で銅線を被覆したボンディングワイヤＷは、従来から、種々の工夫がなされてそれなりに好評を得ているが、近年の低コスト化に基づく、作業の高速化の要求の中で、より一層の作業の安定性、例えば、下記連続ボンディング性、ＦＡＢの安定性等が求められている。
　その作業の安定性の向上には、芯材１の電気抵抗値を高めることが考えられ、その場合、上記Ｐ等を選択し得る。その電気抵抗値を高めることで、ＦＡＢ形成の際のスパークを低電流・短時間で行うことができる。しかし、そのＰ等を添加した場合、耐酸化性が劣化する恐れがある。
　また、作業を高速化すると、上記ボールボンディング法による接続において、図１（ｅ）～（ｆ）に示した、キャピラリー１０ａが導体配線ｃに向かって降下し、ワイヤＷを導体配線（２ｎｄターゲット）ｃに押付けて、ワイヤＷを海老の尻尾のように屈曲させると（同図（ｆ）参照）、その屈曲に伴って被覆層２に亀裂が入る場合がある。被覆層２に亀裂が入れば、その亀裂個所の耐酸化性が劣化することとなり、同図（ｈ）におけるボールｂの形成時、その真球の形成に問題が生じる。
　この発明は、ボンディングワイヤＷの電気抵抗値を高めるとともに耐酸化性の低下を防止することを第１の課題、上記亀裂が生じても耐酸化性の劣化を極力抑えることを第２の課題とする。
　上記第１課題を達成するために、この発明は、まず、上記の電気抵抗値を高めると考えるＰ、Ｂ、Ｂｉ、Ｓｎ、Ａｇ、Ｍｇの内、Ｐを添加することとしたのである。
　このＰの添加によって電気抵抗値が高くなり、ＦＡＢ形成の際のスパークを低電流・短時間で安定して供給することによってそのＦＡＢの形成ができる。
　Ｐは、添加しても加工熱安定性がある上に、一般的にＣｕ－Ｐ合金として販売されていて、その入手も容易である上に、所要の添加量を得やすい。これに対し、Ｂは熱安定性が悪いことから、添加が困難であり、Ｂｉは環境面から好ましくなく、Ｓｎは溶解によって煤ができる問題があり、Ａｇは酸化し易いことから、信頼性が劣り、Ｍｇは蒸気圧が低いことから添加し難い問題がある。
　つぎに、上記耐酸化材として、上記Ａｕ、Ｐｔ、Ｐｄ、Ａｇ、ＮｉやＦｅ（鉄）、Ｃｒ（クロム）、Ｍｎ等が考えられるが、これらの内、Ａｇ、Ｎｉ、Ｆｅ、Ｍｎは容易にＰと化合物（Ａｇ－Ｐ、Ｎｉ－Ｐ、Ｆｅ－Ｐ、Ｃｒ－Ｐ、Ｍｎ－Ｐ）を作るため、添加しても耐酸化性の向上に寄与しなくなる。このため、溶融してもＰと化合しない、Ａｕ又はＲｕ、Ｒｈ、Ｐｄ、Ｏｓ、Ｉｒ、Ｐｔの白金族（Ｐｔ族） の少なくとも１種以上を添加することとしたのである。このとき、所要量の添加のし易さから、１種がより好ましく、多くても２種にすることが好ましい。
　このように、Ｐと化合しないＡｕ又はＰｔ族であれば、Ｐの添加による電気抵抗値の向上を得ることができるとともに、Ａｕ等の添加による耐酸化性の向上を図ることができる。
　このＰの添加量及びＡｕ等の添加量は、その効果を得ることができる範囲で実験等によって適宜に定めれば良いが、例えば、Ｐにあっては、２～２５０ｐｐｍ、Ａｕ等にあっては、合計で１～１００ｐｐｍとする。Ｐ：２ｐｐｍ未満では、電気抵抗値の向上が望めず、低電流・短時間によるボール形成の効果を得ることができない場合があり、２５０ｐｐｍを越えると、電気抵抗値が上がりすぎてＳｉチップ等の素子（電極ａ）からリード（導体配線ｃ）に信号を伝えるというボンディングワイヤとしての機能を阻害する恐れがあるとともに、上記１ｓｔ接合時の電極ａにクラック（チップクラック）が生じる恐れがある。Ａｕ等が１００ｐｐｍを越えると、ワイヤＷの強度が高くなりすぎて、１ｓｔ接合時のチップクラックの原因となる恐れがあり、１ｐｐｍ未満では耐酸化性の効果を望めない恐れがある。また、Ｐにあっては、ボール形成が特に安定する範囲は１０ｐｐｍ以上である。
　さらに、最近ではより脆弱な電極ａが使われることがあるため、チップクラックに対してはより要求が厳しくなっている。そのため、Ｐの添加量及びＡｕ等の添加量についてはより好ましい範囲はＰにあっては、５０ｐｐｍ以下、Ａｕ等にあっては合計で１ｐｐｍ以上５０ｐｐｍ以下とする。この範囲であれば、上記の効果が得られるとともに、ボールｂが硬くなりすぎないため、より脆弱な電極ａにもチップクラックを生じることなく、１ｓｔ接合できる。一方でＰが５０ｐｐｍを超えて２５０ｐｐｍ以下またはＡｕ等が５０ｐｐｍを超えて１００ｐｐｍ以下添加されると、ボールｂが硬くなって、脆弱な電極ａに用いることができなくなる。
　この発明の具体的な構成としては、集積回路素子の電極と回路配線基板の導体配線をボールボンディング法によって接続するための線径１２μｍ以上５０.８μｍ以下のボンディングワイヤであって、Ａｕ又はＰｔ族から少なくとも１種を耐酸化性を向上するために添加するとともに、Ｐを電気抵抗向上のために添加した純度９９．９９質量％以上の銅からなる構成のボンディングワイヤとしたのである。
　この構成において、ボンディングワイヤＷの線径Ｌを、５０．８μｍ以下としたのは、上述の特許文献１ではその径Ｌを５０μｍ以下としているが、５０．８μｍ以下であれば、５０μｍ以下とかわらない程度でもって、上記ボールｂをより小さくできるからである。
　また、線径Ｌの下限を１２μｍ以上としたのは、１２μｍ未満ではボンディング前にオペレータがワイヤＷをキャピラリー１０ａに通すのが困難になり、作業性が悪くなるからである。
　芯材１の銅純度を９９．９質量％（３Ｎ）以上としたのは、銅の高導電性を担保するためである。
　上記第２の課題を達成するために、この発明は、まず、芯材に電気抵抗値を高めるためにＰを添加するとともに、耐酸化性を向上させるためにＡｕ又はＰｔ族の少なくとも１種以上を添加したものとして、ＦＡＢ形成の際のスパークを低電流・短時間で安定してそのＦＡＢの形成ができるとともに、芯材そのものを耐酸化性のものとしたのである。
　このようにすれば、上記と同様に、Ｐの添加によって、耐酸化性の劣化を招くことなく、電気抵抗値が高くなり、ＦＡＢ形成の際のスパークを低電流・短時間で安定して供給することによってそのＦＡＢの形成ができる。
　つぎに、芯材の外周全面に耐酸化性のＰｔ又はＰｄの厚みｔが０．０２～０．０９μｍの被覆層を形成したのである。
　このＰｔ又はＰｄは、上記のように、Ｐとは化合物を生成しないため、被覆層が溶けてもその化合物ができることがなく、電気抵抗値及び耐酸化性の向上は図られる。
　また、Ｐｄ、Ｐｔは、その融点が銅の融点より高いため、ボールｂの真球度が増すことが期待できる。
　なお、上記２ｎｄ接合時等において、ワイヤ（被覆層）に亀裂が生じても、その亀裂は、通常僅かであるため、上記芯材１中へのＡｕ等の添加量でその酸化を十分に抑制する。
　この発明の具体的な構成としては、集積回路素子の電極と回路配線基板の導体配線をボールボンディング法によって接続するための線径１２μｍ以上５０.８μｍ以下のボンディングワイヤであって、その芯材が、金又は白金族から少なくとも１種以上を耐酸化性を向上するために添加するとともに、Ｐを電気抵抗向上のために添加した純度９９．９質量％以上の銅からなり、その芯材の外周全面に、耐酸化性のＰｔ又はＰｄの厚み０．０２～０．０９μｍの被覆層を形成した構成のボンディングワイヤとしたのである。
　この構成において、線径１２μｍ以上５０.８μｍ以下、純度９９．９質量％以上としたのは、上記と同一の理由である。
　また、被覆層２の厚みｔは薄いほど、ボールｂの硬度が低くなり、Ｓｉチップ（電極ａ）の損傷の可能性が低くなるが、薄すぎると、ステッチボンド接合の際に芯材１の銅が露出する度合いが大きくなり、被覆層２を有さない銅ワイヤ程度のステッチボンド接合性しか発現できない。例えば、後記実施例と比較例の実験結果から理解できるように、２回以上のマシンストップが生じる恐れがある。このため、その実施例と比較例の実験結果から、被覆層２の厚みｔは０．０２μｍ以上とする。
　なお、ステージ温度：１５０℃程の低温度でのボールボンディングの時には、連続ボンディング性の実験結果からその厚みｔを０．０４μｍ以上とする。ステージ温度を低くすると、ステッチボンド接合に要する加重が大きくなり、被覆層２の厚みｔが０．０２μｍ以上から０．０４μｍ未満の範囲では芯材の銅が露出する度合いが大きくなり、連続ボンディング性が損なわれることがあるからである。
　一方、被覆層２が厚いと、ボールｂの硬度が高くなり、Ｓｉチップ（電極ａ）の損傷の可能性が高くなる。このため、後記実施例と比較例の実験結果から、被覆層２の厚みｔは０．０９μｍ以下とする。
　また、被覆層２の厚みｔを０．０４μｍ以上とした場合、ステージ温度１５０℃でもマシントラブルが少なくなるが、特に、Ｐｄを被覆層２に採用し、被覆層２の厚みｔを０．０５μｍ以上とした時にはステージ温度をより低温の１３０℃としたときでもマシントラブルが起こらないことも確認されている。これは、パラジウム被覆層２の場合、ＣｕとＰｄの溶融時間差が小さく、より真球になりやすいこととの相乗効果に基づくものと考える。
　さらに、上記芯材の銅純度を９９．９９質量％（４Ｎ）以上、さらに、同９９．９９９質量％（５Ｎ）以上とすれば、Ｓｉチップ（電極ａ）の損傷の可能性が低くなる。これは、銅純度を９９．９９質量％以上、さらに、同９９．９９９質量％以上とすることで、ＦＡＢ硬度をより低減できるからである。
　これらの構成のボンディングワイヤＷの製造方法には種々のものが採用できるが、例えば、純度９９．９質量％以上の銅からなる芯材１の外周全面に、Ｐｔ、Ｐｄの１種以上による被覆層２を形成し、その被覆線を拡散熱処理して芯材と被覆層の密着性を高めた後、線径１２μｍ以上５０．８μｍ以下まで伸線し、さらに、引張伸びが８％以上となるように調質熱処理を行って、被覆層２の厚みｔを０．０２～０．０９μｍとした構成を採用できる。
　その被覆層２は、電解めっき、無電解めっき、蒸着法等の周知の手段によって形成され、一般に、ワイヤＷは大きな線径の銅ロッドをダイスと呼ばれるツールに順次貫通させていくことにより、所定の線径に仕上げられるため、この工程途中の適宜な線径で被覆層２を前記手段により形成する。このとき、被覆する際の芯材１の線径は作業性・コストにより決定されるが、製造装置の制限から０．２～０．８ｍｍが一般的である。外周全面にＰｄ等の金属を被覆された被覆線は２００～５００℃（被覆線の温度）で拡散熱処理を施して前記芯材１と被覆層２の密着性を高めた後、線径１２μｍ以上５０．８μｍ以下まで伸線し、さらに、引張伸びが８％以上となるように調質熱処理を行って、被覆層２の厚みｔを０．０２～０．０９μｍとすることができる。
　引張伸びを８％以上とするのは、ステッチボンド接合性を上げ、より安定したボンディング性を得るためである。
　以上のボンディングワイヤＷの製造方法において、前記銅に上記所要量のＰを添加したものを採用できる。このとき、被覆層２を有しないワイヤＷにあっては、その被覆層２を形成する工程を省略する。
　この発明は、以上のようにして電気抵抗値を高めたので、低電流・短時間で安定してそのＦＡＢの形成ができるうえに、酸化を極力抑えることができる。また、被覆層を設けたワイヤにあっては、仮に、被覆層２に亀裂が生じても、その亀裂による耐酸化性の劣化を極力抑制することができる。
ボールボンディング接続法の説明図であり、（ａ）～（ｈ）はその途中図 この発明に係るボンディングワイヤの断面図 オージェピーク強度と被覆層（めっき層）深さの関係図
　表１に示す実施例１～２０及び比較例１～１２を製作し、そのボンディングワイヤＷの連続ボンディング性、ＨＴＳＴ（High Temperature Storage Test）、ＦＡＢの安定性及び１ｓｔ接合部のＳｉチップ（電極ａ）の損傷度合の試験（確認）を行った（表２）。
　すなわち、まず、銅純度９９．９９質量％の純銅（４Ｎ）に、Ａｕ、Ｒｕ、Ｒｈ、Ｐｄ、Ｏｓ、Ｉｒ、Ｐｔ及びＰを所要ｐｐｍ添加した８ｍｍ径の銅合金線を作製し、その銅合金線にＰｄ、Ｐｔを電解めっき法によって被覆し、その被覆線を巻き戻し、焼鈍炉を通したのち、再び巻き取り用リールで巻き取ることによって連続拡散熱処理を行った。焼鈍炉は炉長１ｍの炉芯管を有する電気炉を用い、炉芯管には窒素ガスを流した。その炉温度は５００℃以上８００℃以下として被覆線（銅合金線）の温度を２００～５００℃とし、その被覆線の走行速度は５～６０ｍ/分とした。
　以上の拡散熱処理を施して銅線（芯材）１と被覆層２の密着性を高めた後、線径１５～５０μｍまで伸線し、さらに、引張伸びが８％以上となるように調質熱処理を行って、被覆層２の厚みｔ：０．０１１～０．１３４μｍのボンディングワイヤＷ（実施例３～１５及び比較例１～１０）を得た。
　つぎに、この各ボンディングワイヤＷにおいて、下記の評価を行った結果を表２に示す。
　〔表面被覆層の厚み〕
　オージェ分光分析法による深さ分析を行った。深さ分析はＡｒイオンでスパッタしながらＰｄまたはＰｔの濃度を測定し、ＳｉＯ２換算して表層からの距離を算出した。表面被覆層の厚みは、表層のＰｄまたはＰｔ濃度の測定値の１／２の濃度になる点までを表面被覆層の厚みとした（図３参照）。
　〔添加元素の分析〕
　ＩＣＰ分析を用いた。
　〔連続ボンディング性〕
　ボンディングマシンで、１０，０００回の連続ボンディングを行い、マシンストップが発生しなければＡ、１回のマシンストップでＢ、２回以上のマシンストップが起こればＤとした。
　連続ボンディングはステージ温度が低くなれば困難になることから、２００℃、１５０℃の２水準で行った。
　また、ステージ温度１３０℃でも同様の連続ボンディングを行った。このときの評価については、マシンストップの発生なしの場合をＡ、１回のマシンストップではＢ、２～３回のマシンストップでＣ、３回以上のマシンストップが起こればＤとした。
　〔ＨＴＳＴ〕
　ボンディング後、２００℃に加熱された大気炉にリードフレームを入れ、１０００ｈｒ経過後のワイヤＷの状態を光学顕微鏡５００倍の倍率で確認した。酸化が進んでいないものはＡ、キズが発生し、Ｃｕが露出することによってワイヤＷに酸化部が点在しているものはＤとした。
　〔ＦＡＢの安定性〕
　１００個のＦＡＢを作製し、９５％以上が真球状ならＡ、９０％以上９５％未満が真球状ならＢ、９０％未満ならＤとした。
　〔１ｓｔ接合部のＳｉチップ損傷〕
　ボンディング後、１ｓｔボール接合部直下のＳｉチップ損傷を評価するために、ボール接合部および電極膜を王水で溶解し、Ｓｉチップのクラックを走査型電子顕微鏡（ＳＥＭ）５００倍で観察した。
　１００個の接合部を観察して５μｍ未満の微小なピットが１個もしくはまったく見られない場合はＡ、５μｍ未満の微小なピットが２～５個ある場合はＢ、５μｍ以上のクラックが２個以上もしくは５μｍ未満の微小なピットが６個以上認められた場合をＤとした。
　〔総合評価〕
　Ａ：連続ボンディング性の評価が２００℃、１５０℃ともにＡであり、かつ他の評価もＡであるもの
　Ｂ：連続ボンディング性の評価が２００℃ではＡ、１５０℃ではＢであり、かつ他の評価もＡであるもの
　Ｃ：連続ボンディング性の評価が１３０℃でＣであり、かつ他の評価がＡ又はＢのもの
　Ｄ：ひとつでもＤのあるもの
　このＡ、Ｂ、Ｃ、Ｄの内、Ａ、Ｂを良好とし、Ｃは使用し得るものとした。
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000002
　この試験結果から、被覆層厚ｔが０．０２μｍ未満であると、２００℃及び１５０℃の両連続ボンディング性が低下し（比較例１、３、７）、０．０２μｍ以上０．０４μｍ未満になると、前者の連続ボンディング性が満足できるものとなり（実施例１、３、１０、１７、比較例８）、０．０４μｍ以上となると、両者の連続ボンディング性が満足できる（良好な）ものとなることが理解できる（実施例２、４～９、１１～１６、１８～２０、比較例２、４～６、９～１２）。また、被覆層にＰｄを用い、被覆層厚ｔが０．０５μｍ以上となると、１３０℃での連続ボンディング性が満足できるものとなることがわかる（実施例２、４、５、７～９、１１、１３、１４、比較例４～６）。
　一方、被覆層厚ｔが０．０９μｍを越えると、ボールｂが硬くなって、Ｓｉチップ（電極ａ）の損傷が認められるようになる（比較例２、９、１１、１２）。
　また、芯材１にＡｕまたはＰｔ族を１ｐｐｍ以上添加したものはＨＴＳＴの結果が良好になり（実施例１～２０、比較例１、２、５、７、９～１２）、１ｐｐｍ未満のものは耐酸化性が低くなる（比較例３、４、６、８）。これらにおいて、同５０ｐｐｍを超えたものについては、被覆層厚ｔが０．０９μｍ以下であっても、ボールｂが硬くなるため、電極ａに若干の損傷が認められるようになる（比較例１、７）。同１００ｐｐｍを超えたものについては、被覆層厚ｔが０．０９μｍ以下であっても、電極ａに損傷が生じ、使用上問題が起こる（比較例５、９、１０）。
　Ｐ添加については、添加量が２ｐｐｍ以上１０ｐｐｍ未満であれば、ＦＡＢが安定して真球状になる良好な結果である（実施例１～２０、比較例１～５、７、８、１０～１２）。また、添加量が１０ｐｐｍ以上であれば、非常に安定してＦＡＢ形状が良好な結果となる（実施例１、３～９、１１～２０、比較例１～５、７、１１、１２）。一方、添加量が２ｐｐｍ未満であるとＦＡＢ形状が悪くなり（比較例６、９）、添加量が５０ｐｐｍを超えると、被覆層厚ｔが０．０９μｍ以下でかつＡｕまたはＰｔ族の添加量が５０ｐｐｍ以下であっても、電極ａに若干の損傷が認められるようになる（実施例１、５、１６、２０）。さらに、添加量が２５０ｐｐｍを超えると、被覆層厚ｔが０．０９μｍ以下でかつＡｕまたはＰｔ族の添加量が５０ｐｐｍ以下であっても、ボールｂが硬くなって、電極ａの損傷が認められるようになる（比較例３、４）。
Ｗ　ボンディングワイヤ
１　芯材
２　被覆層
ａ　集積回路素子の電極
ｂ　ボンディングボール
ｃ　回路配線基板の導体配線

Claims (5)

  1. 　集積回路素子の電極（ａ）と回路配線基板の導体配線（ｃ）をボールボンディング法によって接続するための線径（Ｌ）：１２μｍ以上５０.８μｍ以下のボンディングワイヤ（Ｗ）であって、
    　その芯材（１）が、金又は白金族から少なくとも１種以上を耐酸化性を向上するために添加するとともに、リンを電気抵抗向上のために添加した純度９９．９質量％以上の銅からなり、
    　その芯材（１）の外周全面に、耐酸化性の白金又はパラジウムの厚み（ｔ）：０．０２～０．０９μｍの被覆層（２）を形成したことを特徴とするボンディングワイヤ。
  2. 　上記被覆層（２）の厚み（ｔ）を０．０４～０．０９μｍとしたことを特徴とする請求項１に記載のボンディングワイヤ。
  3. 　上記被覆層（２）の厚み（ｔ）を０．０５～０．０９μｍとしたことを特徴とする請求項１に記載のボンディングワイヤ。
  4. 　上記リンの添加量：２～２５０ｐｐｍ、上記金又は白金族から少なくとも１種にあっては、その合計添加量：１～１００ｐｐｍとしたことを特徴とする請求項１乃至３の何れかに記載のボンディングワイヤ。
  5. 　上記リンの添加量：１０～５０ｐｐｍ、上記金又は白金族から少なくとも１種にあっては、その合計添加量：１～５０ｐｐｍとしたことを特徴とする請求項１乃至３の何れかに記載のボンディングワイヤ。
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