JP6869920B2 - ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法 - Google Patents
ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法 Download PDFInfo
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- JP6869920B2 JP6869920B2 JP2018070813A JP2018070813A JP6869920B2 JP 6869920 B2 JP6869920 B2 JP 6869920B2 JP 2018070813 A JP2018070813 A JP 2018070813A JP 2018070813 A JP2018070813 A JP 2018070813A JP 6869920 B2 JP6869920 B2 JP 6869920B2
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- palladium
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims description 88
- 239000004065 semiconductor Substances 0.000 title claims description 73
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 44
- 125000004354 sulfur functional group Chemical group 0.000 claims description 34
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- 230000002093 peripheral effect Effects 0.000 claims description 10
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
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- 150000001875 compounds Chemical class 0.000 description 5
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- 229910000765 intermetallic Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
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- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
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- 229910052717 sulfur Inorganic materials 0.000 description 4
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- 238000005211 surface analysis Methods 0.000 description 4
- 229910052714 tellurium Inorganic materials 0.000 description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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- 229910052733 gallium Inorganic materials 0.000 description 2
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- 239000000203 mixture Substances 0.000 description 2
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- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
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- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 208000035404 Autolysis Diseases 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 206010057248 Cell death Diseases 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
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- 230000028043 self proteolysis Effects 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000012856 weighed raw material Substances 0.000 description 1
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H01L23/4952—Additional leads the additional leads being a bump or a wire
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- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Description
次に、本発明に係るボールボンディング用貴金属被覆銀ボンディングワイヤの製造方法を説明する。なお、実施形態におけるボールボンディング用貴金属被覆銀ボンディングワイヤの製造方法は特に以下に限定されるものではない。
ボンディングワイヤの芯材に用いる純銀または銀合金は、原料を同時に溶解することによって製造できる。溶解には、アーク加熱炉、高周波加熱炉、抵抗加熱炉等を利用することができ、連続鋳造炉を用いるのが好ましい。その手順は次のとおりである。カーボンるつぼにあらかじめ秤量した原料を装填し、真空または窒素ガスやアルゴンガス等の不活性雰囲気で加熱溶解させた後、冷却する。得られた純銀または銀合金のインゴットは、圧延加工やダイスを用いた引抜加工、連続伸線加工を繰り返し行うことで最終線径まで細線化する。
貴金属被覆層を形成する方法は、最終線径の銀線に貴金属被覆層を形成する手法、あるいは、連続鋳造上がりの銀線や中間線径の銀線に貴金属被覆層を形成した後に、連続伸線を繰返して最終線径に加工する方法がある。
半導体チップ2とリードフレーム3を貴金属被覆銀ボンディングワイヤ4にて接合した後、貴金属被覆銀ボンディングワイヤ4や接合部を保護するためにセラミックやモールド樹脂等で封止する。その後、外部リードを所定の形状に成型する。最後に電気的特性検査や外観検査等の製品検査、および、環境試験や寿命試験等の信頼性検査を経て半導体装置1となる。
基板5に複数の半導体チップ2が配置され、基板5の電極6と半導体チップ2の電極(図示しない)、半導体チップ2の電極(図示しない)と半導体チップ2の電極(図示しない)が貴金属被覆銀ワイヤ4で電気的に接合されている。なお、貴金属被覆銀ワイヤ4で電気的に接合される半導体チップ2の電極とは、半導体チップ2上にある電極にあらかじめ接合したバンプ(図示しない)も含むものとする。半導体装置とは具体的にいうと、ロジックIC、アナログIC、ディスクリート半導体、メモリ、光半導体等がある。
圧着ボールの真円性は、ボンディングワイヤ接合装置の圧着ボール径の縦(超音波印加方向)をYとし、横(超音波印加と直交する方向)をXとし、その比、すなわちY/Xにて評価を行う。「○」(合格)は0.8〜1.2、「×」(不合格)は0.79以下および1.21以上を評価基準と定めた。ただし、真円性が「○」(合格)であっても、芯ずれ現象があるワイヤに関して、真円性の評価は「×」(不合格)とした。芯ずれ現象とは、圧着ボール形状がワイヤ軸に対し非対称に形成される現象であり、芯ずれが大きければ、隣接するボールと接触するためショート不良を起こす。また、芯ずれは接合強度不足も懸念される。なお、ボンディングされた実施例に係るワイヤの圧着ボール形状は、いずれもすべて真円性の評価は表1のとおり「○」(合格)であった。表1は貴金属被覆銀ワイヤの実施評価を示す。
次に、高加速寿命試験(HAST:Highly Accelerated Temperature and Humidity Stress Test)を行った。HAST信頼性評価は、上記にて作製したワイヤをHAST装置内に入れ、温度130℃、相対湿度85%、2気圧の雰囲気で192時間放置する方法で行った。その後電気抵抗測定を行い、試験前との電気抵抗の上昇率にて評価を行った。この評価方法を選定した理由は、ワイヤのアルミニウム接合界面で生成される銀とアルミニウムとの金属間化合物の腐食によって生じる接合界面での腐食層の進行状況により、接合面積が小さくなり、通電性が悪くなり、電気抵抗が上昇するためである。そのため、HAST前後でのワイヤの電気抵抗の上昇率を測定することが課題解決のための評価方法として適している。
2 半導体チップ
3 リードフレーム
4 貴金属被覆銀ワイヤ
5 基板
6 電極
Claims (20)
- 純銀または銀合金からなる芯材上に貴金属被覆層を備えた貴金属被覆銀ワイヤにおいて、ワイヤが少なくとも1種の硫黄族元素を含み、貴金属被覆層は少なくとも1層がパラジウム層であり、ワイヤ全体に対するパラジウムの含有量が合計で0.01質量%以上5.0質量%以下であり、かつ、ワイヤ全体に対する硫黄族元素の含有量が合計で0.1質量ppm以上100質量ppm以下であることを特徴とするボールボンディング用貴金属被覆銀ワイヤ。
- 上記貴金属被覆層はさらに少なくとも1層が金層であり、ワイヤ全体に対する金の含有量が0.01質量%以上1.0質量%未満であることを特徴とする請求項1に記載のボールボンディング用貴金属被覆銀ワイヤ。
- 上記パラジウム層の外周面に金層を備えることを特徴とする請求項1に記載のボールボンディング用貴金属被覆銀ワイヤ。
- 上記パラジウム層の外周面および芯材面にそれぞれ金層を備えることを特徴とする請求項1に記載のボールボンディング用貴金属被覆銀ワイヤ。
- 上記芯材が銅を含み、ワイヤ全体に対する銅の含有量が0.005質量%以上2.0質量%以下であることを特徴とする請求項1に記載のボールボンディング用貴金属被覆銀ワイヤ。
- 純銀または銀合金からなる芯材上に貴金属被覆層を備えた貴金属被覆銀ワイヤを製造する方法において、ワイヤが少なくとも1種の硫黄族元素を含み、貴金属被覆層は少なくとも1層がパラジウム層であり、ワイヤ全体に対するパラジウムの含有量が合計で0.01質量%以上5.0質量%以下であり、かつ、ワイヤ全体に対する硫黄族元素の含有量が合計で0.1質量ppm以上100質量ppm以下であることを特徴とするボールボンディング用貴金属被覆銀ワイヤの製造方法。
- 上記貴金属被覆層はさらに少なくとも1層が金層であり、ワイヤ全体に対する金の含有量が0.01質量%以上1.0質量%未満であることを特徴とする請求項6に記載のボールボンディング用貴金属被覆銀ワイヤの製造方法。
- 上記パラジウム層の外周面に金層を備えることを特徴とする請求項6に記載のボールボンディング用貴金属被覆銀ワイヤの製造方法。
- 上記パラジウム層の外周面および芯材面にそれぞれ金層を備えることを特徴とする請求項6に記載のボールボンディング用貴金属被覆銀ワイヤの製造方法。
- 上記芯材が銅を含み、ワイヤ全体に対する銅の含有量が0.005質量%以上2.0質量%以下であることを特徴とする請求項6に記載のボールボンディング用貴金属被覆銀ワイヤの製造方法。
- 少なくとも1つの半導体チップと、リードフレームまたは基板を備え、半導体チップの電極とリードフレームの電極、または半導体チップの電極と基板の電極、もしくは、複数の半導体チップの電極間をボールボンディング用貴金属被覆銀ワイヤで接続した半導体装置であって、ボールボンディング用貴金属被覆銀ワイヤは純銀または銀合金からなる芯材上に貴金属被覆層を備え、ワイヤが少なくとも1種の硫黄族元素を含み、貴金属被覆層は少なくとも1層がパラジウム層であり、ワイヤ全体に対するパラジウムの含有量が合計で0.01質量%以上5.0質量%以下であり、かつ、ワイヤ全体に対する硫黄族元素の含有量が合計で0.1質量ppm以上100質量ppm以下であることを特徴とする半導体装置。
- 上記貴金属被覆層はさらに少なくとも1層が金層であり、ワイヤ全体に対する金の含有量が0.01質量%以上1.0質量%未満であるボールボンディング用貴金属被覆銀ワイヤを有することを特徴とする請求項11に記載の半導体装置。
- 上記パラジウム層の外周面に金層を備えるボールボンディング用貴金属被覆銀ワイヤを有することを特徴とする請求項11に記載の半導体装置。
- 上記パラジウム層の外周面および芯材面にそれぞれ金層を備えるボールボンディング用貴金属被覆銀ワイヤを有することを特徴とする請求項11に記載の半導体装置。
- 上記芯材が銅を含み、ワイヤ全体に対する銅の含有量が0.005質量%以上2.0質量%以下であるボールボンディング用貴金属被覆銀ワイヤを有することを特徴とする請求項11に記載の半導体装置。
- 少なくとも1つの半導体チップと、リードフレームまたは基板を備え、半導体チップの電極とリードフレームの電極、または半導体チップの電極と基板の電極、もしくは複数の半導体チップの電極間をボールボンディング用貴金属被覆銀ワイヤで接続した半導体装置の製造方法であって、ボールボンディング用貴金属被覆銀ワイヤは純銀または銀合金からなる芯材上に貴金属被覆層を備え、ワイヤが少なくとも1種の硫黄族元素を含み、貴金属被覆層は少なくとも1層がパラジウム層であり、ワイヤ全体に対するパラジウムの含有量が合計で0.01質量%以上5.0質量%以下であり、かつ、ワイヤ全体に対する硫黄族元素の含有量が合計で0.1質量ppm以上100質量ppm以下であることを特徴とする半導体装置の製造方法。
- 上記貴金属被覆層はさらに少なくとも1層が金層であり、ワイヤ全体に対する金の含有量が0.01質量%以上1.0質量%未満であるボールボンディング用貴金属被覆銀ワイヤを有することを特徴とする請求項16に記載の半導体装置の製造方法。
- 上記パラジウム層の外周面に金層を備えるボールボンディング用貴金属被覆銀ワイヤを有することを特徴とする請求項16に記載の半導体装置の製造方法。
- 上記パラジウム層の外周面および芯材面にそれぞれ金層を備えるボールボンディング用貴金属被覆銀ワイヤを有することを特徴とする請求項16に記載の半導体装置の製造方法。
- 上記芯材が銅を含み、ワイヤ全体に対する銅の含有量が0.005質量%以上2.0質量%以下であるボールボンディング用貴金属被覆銀ワイヤを有することを特徴とする請求項16に記載の半導体装置の製造方法。
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JP2018070813A JP6869920B2 (ja) | 2018-04-02 | 2018-04-02 | ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法 |
SG11202009825RA SG11202009825RA (en) | 2018-04-02 | 2018-04-19 | Noble metal-coated silver wire for ball bonding and method for producing the same, and semiconductor device using noble metal-coated silver wire for ball bonding and method for producing the same |
MYPI2020003455A MY195984A (en) | 2018-04-02 | 2018-04-19 | Noble Metal-Coated Silver Wire for Ball Bonding and Method for Producing The Same, And semiconductor device using noble metal-coated silver wire for ball bonding and method for Producing The Same |
CN201880072388.2A CN111344846A (zh) | 2018-04-02 | 2018-04-19 | 球焊用贵金属被覆银线及其制造方法、及使用球焊用贵金属被覆银线的半导体装置及其制造方法 |
US16/975,218 US11251153B2 (en) | 2018-04-02 | 2018-04-19 | Noble metal-coated silver wire for ball bonding, and semiconductor device using noble metal-coated silver wire for ball bonding |
PCT/JP2018/016201 WO2019193771A1 (ja) | 2018-04-02 | 2018-04-19 | ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法 |
KR1020207016070A KR102425336B1 (ko) | 2018-04-02 | 2018-04-19 | 볼 본딩용 귀금속 피복 은 와이어 및 그 제조 방법, 그리고 볼 본딩용 귀금속 피복 은 와이어를 사용한 반도체 장치 및 그 제조 방법 |
TW107113549A TWI740031B (zh) | 2018-04-02 | 2018-04-20 | 球焊用貴金屬被覆銀線及其製造方法、及使用球焊用貴金屬被覆銀線的半導體裝置及其製造方法 |
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JP7269361B2 (ja) * | 2019-10-01 | 2023-05-08 | 田中電子工業株式会社 | ワイヤ接合構造とそれに用いられるボンディングワイヤ及び半導体装置 |
WO2021205674A1 (ja) * | 2020-04-10 | 2021-10-14 | 田中電子工業株式会社 | 金被覆ボンディングワイヤとその製造方法、半導体ワイヤ接合構造、及び半導体装置 |
US11545457B2 (en) * | 2020-08-30 | 2023-01-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package, redistribution structure and method for forming the same |
WO2023096567A1 (en) * | 2021-11-23 | 2023-06-01 | Heraeus Materials Singapore Pte. Ltd. | Ball-bond arrangement |
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US7969021B2 (en) | 2000-09-18 | 2011-06-28 | Nippon Steel Corporation | Bonding wire for semiconductor device and method for producing the same |
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JP2013033811A (ja) | 2011-08-01 | 2013-02-14 | Tatsuta Electric Wire & Cable Co Ltd | ボールボンディングワイヤ |
WO2013076548A1 (en) * | 2011-11-26 | 2013-05-30 | Microbonds Inc. | Bonding wire and process for manufacturing a bonding wire |
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MY195984A (en) | 2023-02-27 |
KR102425336B1 (ko) | 2022-07-26 |
TW201942989A (zh) | 2019-11-01 |
TWI740031B (zh) | 2021-09-21 |
US11251153B2 (en) | 2022-02-15 |
WO2019193771A1 (ja) | 2019-10-10 |
KR20200086310A (ko) | 2020-07-16 |
JP2019186248A (ja) | 2019-10-24 |
SG11202009825RA (en) | 2020-11-27 |
US20200395330A1 (en) | 2020-12-17 |
CN111344846A (zh) | 2020-06-26 |
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