JP6002300B1 - ボールボンディング用パラジウム(Pd)被覆銅ワイヤ - Google Patents
ボールボンディング用パラジウム(Pd)被覆銅ワイヤ Download PDFInfo
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- JP6002300B1 JP6002300B1 JP2015172778A JP2015172778A JP6002300B1 JP 6002300 B1 JP6002300 B1 JP 6002300B1 JP 2015172778 A JP2015172778 A JP 2015172778A JP 2015172778 A JP2015172778 A JP 2015172778A JP 6002300 B1 JP6002300 B1 JP 6002300B1
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- palladium
- wire
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- stretched layer
- sulfur
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- H—ELECTRICITY
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- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0227—Rods, wires
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
- B21C1/02—Drawing metal wire or like flexible metallic material by drawing machines or apparatus in which the drawing action is effected by drums
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- B23K35/302—Cu as the principal constituent
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- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
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Abstract
Description
前記銅合金が0.1〜1.5質量%の白金(Pt)またはニッケル(Ni)を含有する銅合金であることが好ましい。また、前記パラジウム(Pd)延伸層が30ナノメートル(nm)以上300ナノメートル(nm)以下の理論的膜厚であることが好ましい。また、前記パラジウム(Pd)延伸層が湿式めっき浴からのめっき析出物であることが好ましい。また、前記パラジウム(Pd)延伸層がイオウ(S)またはリン(P)を共析したパラジウム(Pd)延伸層であることが好ましい。また、前記パラジウム(Pd)延伸層中にイオウ(S)、リン(P)、ホウ素(B)またはカーボン(C)の少なくとも1種または2種以上が合計で30〜700質量ppm(ただし、リン(P)が単独の場合は0.2〜800質量ppm)含有していることが好ましい。特に前記パラジウム(Pd)延伸層中にイオウ(S)を30〜300質量ppm含有することが好ましい。また、前記パラジウム(Pd)延伸層の表面側に前記イオウ(S)が濃縮され、芯材側では検出限界以下であることが好ましい。また、前記金(Au)極薄延伸層の深さ方向の膜厚よりも前記イオウ(S)の深さ方向の膜厚が長いことが好ましい。また、前記金(Au)極薄延伸層が3ナノメートル(nm)以下の理論的膜厚であることが好ましい。
パラジウム(Pd)−イオウ(S)非晶質合金の被覆層は次のようにして形成した。市販のパラジウム(Pd)電気めっき浴(日本エレクトロプレーティング株式会社製ADP700)に同社製ADP700添加剤を0.1g/L、0.005g/Lおよび0.15g/Lそれぞれ添加して、めっき浴中のイオウ(S)濃度を中濃度、低濃度および高濃度とした。この浴中で直径1.0mm銅線に電流密度0.75A/dm2で電流を流し、パラジウム(Pd)−イオウ(S)非晶質合金の被覆層を形成した。この3種類の被覆銅線に金(Au)をマグネトロンスパッタリングにより所定の厚さまで被覆した。
パラジウム(Pd)−リン(P)非晶質合金の被覆層は次のようにして形成した。市販のパラジウム(Pd)無電解めっき浴(日本エレクトロプレーティング株式会社製ADP700)に亜リン酸(H3PO3)を0.2g/L添加した。この浴中で直径1.0mm銅線に電流密度0.75A/dm2で電流を流しパラジウム(Pd)−リン(P)非晶質合金の被覆層を形成した。その後、実施例1と同様にして実施例4のボールボンディング用パラジウム(Pd)被覆銅ワイヤを製造した。
パラジウム(Pd)−カーボン(C)−ホウ素(B)含有合金の被覆層は次のようにして形成した。市販のパラジウム(Pd)電気めっき浴(日本エレクトロプレーティング株式会社製ADP700)に界面活性剤(日本エレクトロプレーティング株式会社製JSウェッター)を2mL/Lおよびホウ素無機化合物を所定量添加した。この浴中で直径1.0mm銅線に電流密度0.75A/dm2で電流を流しパラジウム(Pd)−カーボン(C)−ホウ素(B)非晶質合金の被覆層を形成した。その後、実施例1と同様にして実施例5のボールボンディング用パラジウム(Pd)被覆銅ワイヤを製造した。
実施例1〜実施例5のワイヤについて、ケイ・アンド・エス社製全自動リボンボンダーICONN型超音波装置にて、BGA基板上の厚さ400μmのSiチップ上の厚さ2μmのAl−1質量%Si−0.5質量%Cu合金パッド上に、EFO電流60mA、EFO時間144μsで34μmの溶融ボールを作製し、圧着径50μm、ループ長で2mmで1,000本ボンディングを行った。この際、チップ上のAl−1質量%Si−0.5質量%Cu合金パッドは隣り合うボンド部のみが電気的に接続されており、隣り合うワイヤ同士で電気的に1つの回路を形成しており、計500回路が形成される。その後、このBGA基板上のSiチップを市販のトランズファーモールド機(第一精工製株式会社、GPGP−PRO−LAB80)を使って樹脂封止した。
比較例1〜3のワイヤについて、実施例1〜5と同様にして、高温高湿(130℃×85RH)保持の前後での回路の電気抵抗値の変化を調べた。比較例1〜3のワイヤは、回路の電気抵抗値が上昇しており、ボンディングワイヤとして不適当であることがわかった。この結果を表1右欄に×印で示す。
Claims (10)
- 線径が10〜25μmのボールボンディング用パラジウム(Pd)被覆銅ワイヤであって、純銅(Cu)または銅(Cu)の純度が98質量%以上の銅合金からなる芯材上にパラジウム(Pd)延伸層が形成されたものにおいて、当該パラジウム(Pd)延伸層がイオウ(S)、リン(P)、ホウ素(B)またはカーボン(C)を含有するパラジウム(Pd)層であることを特徴とするボールボンディング用パラジウム(Pd)被覆銅ワイヤ。
- 線径が10〜25μmのボールボンディング用パラジウム(Pd)被覆銅ワイヤであって、純銅(Cu)または銅(Cu)の純度が98質量%以上の銅合金からなる芯材上にパラジウム(Pd)延伸層および金(Au)極薄延伸層が形成されたものにおいて、当該パラジウム(Pd)延伸層がイオウ(S)、リン(P)、ホウ素(B)またはカーボン(C)を含有するパラジウム(Pd)層であることを特徴とするボールボンディング用パラジウム(Pd)被覆銅ワイヤ。
- 前記銅合金が0.1〜1.5質量%の白金(Pt)またはニッケル(Ni)を含有する銅合金であることを特徴とする請求項1または請求項2に記載のボールボンディング用パラジウム(Pd)被覆銅ワイヤ。
- 前記パラジウム(Pd)延伸層が30ナノメートル(nm)以上300ナノメートル(nm)以下の理論的膜厚であることを特徴とする請求項1または請求項2に記載のボールボンディング用パラジウム(Pd)被覆銅ワイヤ。
- 前記パラジウム(Pd)延伸層がイオウ(S)またはリン(P)を共析したパラジウム(Pd)延伸層であることを特徴とする請求項1または請求項2に記載のボールボンディング用パラジウム(Pd)被覆銅ワイヤ。
- 前記パラジウム(Pd)延伸層中にイオウ(S)、リン(P)、ホウ素(B)またはカーボン(C)の少なくとも1種または2種以上が合計で30〜700質量ppm(ただし、リン(P)が単独の場合は0.2〜800質量ppm)含有していることを特徴とする請求項1または請求項2に記載のボールボンディング用パラジウム(Pd)被覆銅ワイヤ。
- 前記パラジウム(Pd)延伸層中にイオウ(S)を30〜300質量ppm含有することを特徴とする請求項1または請求項2に記載のボールボンディング用パラジウム(Pd)被覆銅ワイヤ。
- 前記パラジウム(Pd)延伸層の表面側に前記イオウ(S)が濃縮され、芯材側では検出限界以下であることを特徴とする請求項1または請求項2に記載のボールボンディング用パラジウム(Pd)被覆銅ワイヤ。
- 前記金(Au)極薄延伸層の深さ方向の膜厚よりも前記イオウ(S)の深さ方向の膜厚が長いことを特徴とする請求項2に記載のボールボンディング用パラジウム(Pd)被覆銅ワイヤ。
- 前記金(Au)極薄延伸層が3ナノメートル(nm)以下の理論的膜厚であることを特徴とする請求項2に記載のボールボンディング用パラジウム(Pd)被覆銅ワイヤ。
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TW105117533A TWI578422B (zh) | 2015-09-02 | 2016-06-03 | Ball wire with palladium (Pd) coated copper wire |
US15/248,196 US10195697B2 (en) | 2015-09-02 | 2016-08-26 | Palladium (Pd)-coated copper wire for ball bonding |
CN201610730700.5A CN106486450B (zh) | 2015-09-02 | 2016-08-26 | 球焊用钯被覆铜线 |
SG10201607305RA SG10201607305RA (en) | 2015-09-02 | 2016-09-01 | Palladium (pd)-coated copper wire for ball bonding |
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CN112872066A (zh) * | 2021-03-24 | 2021-06-01 | 邱小华 | 一种青铜线加工工艺 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10137534B2 (en) | 2015-06-15 | 2018-11-27 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
CN107004610B (zh) | 2015-07-23 | 2020-07-17 | 日铁新材料股份有限公司 | 半导体装置用接合线 |
JP6869920B2 (ja) * | 2018-04-02 | 2021-05-12 | 田中電子工業株式会社 | ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法 |
JP6869919B2 (ja) * | 2018-04-02 | 2021-05-12 | 田中電子工業株式会社 | ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法 |
JP6487108B1 (ja) * | 2018-11-26 | 2019-03-20 | 田中電子工業株式会社 | パラジウム被覆銅ボンディングワイヤ及びその製造方法 |
CN113748493A (zh) * | 2019-03-12 | 2021-12-03 | 田中电子工业株式会社 | 钯覆盖铜接合线、钯覆盖铜接合线的制造方法、及使用了其的引线接合结构、半导体装置以及其制造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010106851A1 (ja) * | 2009-03-17 | 2010-09-23 | 新日鉄マテリアルズ株式会社 | 半導体用ボンディングワイヤ |
JP2010272884A (ja) * | 2010-08-03 | 2010-12-02 | Nippon Steel Materials Co Ltd | 半導体装置用ボンディングワイヤ |
JP2011146754A (ja) * | 2007-01-15 | 2011-07-28 | Nippon Steel Materials Co Ltd | ボンディングワイヤの接合構造及びその形成方法 |
JP2011249463A (ja) * | 2010-05-25 | 2011-12-08 | Tatsuta Electric Wire & Cable Co Ltd | ボンディングワイヤ |
JP2013110261A (ja) * | 2011-11-21 | 2013-06-06 | Tatsuta Electric Wire & Cable Co Ltd | ボンディングワイヤ及びその製造方法 |
JP2014232762A (ja) * | 2013-05-28 | 2014-12-11 | 三菱電機株式会社 | ボンディングワイヤ、ボールボンディング方法および半導体装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60160554U (ja) | 1984-03-31 | 1985-10-25 | 古河電気工業株式会社 | 半導体用ボンディング細線 |
JP2004064033A (ja) * | 2001-10-23 | 2004-02-26 | Sumitomo Electric Wintec Inc | ボンディングワイヤー |
JP2004014884A (ja) | 2002-06-07 | 2004-01-15 | Sumitomo Electric Wintec Inc | ボンディングワイヤー |
KR101707244B1 (ko) * | 2009-07-30 | 2017-02-15 | 신닛테츠스미킹 마테리알즈 가부시키가이샤 | 반도체용 본딩 와이어 |
JP4919364B2 (ja) * | 2010-08-11 | 2012-04-18 | 田中電子工業株式会社 | ボールボンディング用金被覆銅ワイヤ |
JP2013042105A (ja) | 2011-07-15 | 2013-02-28 | Tatsuta Electric Wire & Cable Co Ltd | ボンディングワイヤ |
JP5088981B1 (ja) * | 2011-12-21 | 2012-12-05 | 田中電子工業株式会社 | Pd被覆銅ボールボンディングワイヤ |
US10950570B2 (en) * | 2014-04-21 | 2021-03-16 | Nippon Steel Chemical & Material Co., Ltd. | Bonding wire for semiconductor device |
US20160189752A1 (en) * | 2014-12-30 | 2016-06-30 | Yaron Galant | Constrained system real-time capture and editing of video |
WO2016189752A1 (ja) * | 2015-05-26 | 2016-12-01 | 日鉄住金マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
CN107004610B (zh) * | 2015-07-23 | 2020-07-17 | 日铁新材料股份有限公司 | 半导体装置用接合线 |
-
2015
- 2015-09-02 JP JP2015172778A patent/JP6002300B1/ja active Active
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011146754A (ja) * | 2007-01-15 | 2011-07-28 | Nippon Steel Materials Co Ltd | ボンディングワイヤの接合構造及びその形成方法 |
WO2010106851A1 (ja) * | 2009-03-17 | 2010-09-23 | 新日鉄マテリアルズ株式会社 | 半導体用ボンディングワイヤ |
JP2011249463A (ja) * | 2010-05-25 | 2011-12-08 | Tatsuta Electric Wire & Cable Co Ltd | ボンディングワイヤ |
JP2010272884A (ja) * | 2010-08-03 | 2010-12-02 | Nippon Steel Materials Co Ltd | 半導体装置用ボンディングワイヤ |
JP2013110261A (ja) * | 2011-11-21 | 2013-06-06 | Tatsuta Electric Wire & Cable Co Ltd | ボンディングワイヤ及びその製造方法 |
JP2014232762A (ja) * | 2013-05-28 | 2014-12-11 | 三菱電機株式会社 | ボンディングワイヤ、ボールボンディング方法および半導体装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112872066A (zh) * | 2021-03-24 | 2021-06-01 | 邱小华 | 一种青铜线加工工艺 |
CN112872066B (zh) * | 2021-03-24 | 2022-09-16 | 山东铭瑞工贸有限公司 | 一种青铜线加工工艺 |
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