JP6487108B1 - パラジウム被覆銅ボンディングワイヤ及びその製造方法 - Google Patents
パラジウム被覆銅ボンディングワイヤ及びその製造方法 Download PDFInfo
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- JP6487108B1 JP6487108B1 JP2018220570A JP2018220570A JP6487108B1 JP 6487108 B1 JP6487108 B1 JP 6487108B1 JP 2018220570 A JP2018220570 A JP 2018220570A JP 2018220570 A JP2018220570 A JP 2018220570A JP 6487108 B1 JP6487108 B1 JP 6487108B1
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- palladium
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 title claims abstract description 807
- 229910052763 palladium Inorganic materials 0.000 title claims abstract description 401
- 239000010949 copper Substances 0.000 title claims abstract description 207
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 198
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 127
- 125000004354 sulfur functional group Chemical group 0.000 claims abstract description 66
- 239000011669 selenium Substances 0.000 claims abstract description 34
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 22
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 22
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052737 gold Inorganic materials 0.000 claims description 103
- 239000010931 gold Substances 0.000 claims description 103
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 102
- 239000011162 core material Substances 0.000 claims description 42
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 24
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- 238000005259 measurement Methods 0.000 claims description 18
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 57
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
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- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
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- 235000013619 trace mineral Nutrition 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- 239000000956 alloy Substances 0.000 description 3
- -1 argon ion Chemical class 0.000 description 3
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- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
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- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
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- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
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- H01L2924/01—Chemical elements
- H01L2924/01052—Tellurium [Te]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Abstract
Description
また、本発明は、高温、高湿の環境においても接合信頼性が高く維持することのできるパラジウム被覆銅ボンディングワイヤの製造方法を提供することを目的とする。
また、本発明のパラジウム被覆銅ボンディングワイヤの製造方法によれば、高温、高湿の環境においても接合信頼性が高く維持することのできるパラジウム被覆銅ボンディングワイヤを提供することができる。
本実施形態のパラジウム(Pd)被覆銅ボンディングワイヤは、銅を主成分とする芯材と、前記芯材上のパラジウム層とを有する。そして、パラジウム被覆銅ボンディングワイヤは、硫黄族元素を含み、銅とパラジウムと硫黄族元素の合計に対する、パラジウムの濃度が1.0〜4.0質量%であり、硫黄族元素を2種以上含む場合に、その濃度が合計で50質量ppm以下である。
本実施形態のパラジウム被覆銅ボンディングワイヤにおける芯材は、銅を主成分として構成される銅又は銅合金である。ここでの主成分は、量又は特性において中心的であることを意味し、含有量であれば少なくとも50.0質量%である。主成分としての特性は、その構成に求められる特性であり、例えば、銅の芯材ではワイヤの破断力や伸び率等の機械的性質である。主成分は、例えば、このような特性に中心的に影響を与える成分ということができる。
本実施形態のパラジウム被覆銅ボンディングワイヤは、芯材となる銅を主成分とする銅線材表面にパラジウムが被覆され、伸線加工及び、必要に応じて熱処理されることで得られる。パラジウム被覆後に金が被覆されてもよく、また、パラジウム又は金が被覆された後に、段階的に伸線や、熱処理が施されてもよい。
次に、上記実施形態のパラジウム被覆銅ボンディングワイヤを用いた半導体装置について説明する。図7に示すように、本実施形態の半導体装置1は、半導体チップ2と、半導体チップ2上に設けられた、アルミニウムを含有するアルミニウム電極3と、半導体チップ2の外部に設けられた、金被覆を有する外部電極4と、アルミニウム電極3と外部電極4表面を接続するボンディングワイヤ5を有する。なお、図7では外部電極上に金被覆を有する場合を例に説明するが、金被覆に代えて、又は金被覆とともに銀被覆を有していても同様である。
芯材は純度99.99質量%以上の銅(Cu)を用い、これを連続鋳造し、前熱処理をしながら圧延し、その後一次伸線して銅線材(直径0.5mm)を得た。
パラジウムめっき後の銅線材について稔回試験を行い、稔回試験後の線材表面の外観を光学実体顕微鏡(オリンパス社製、製品名:SZX16)で観察し、パラジウムの亀裂が芯材の銅まで達しているかどうかで評価した。亀裂が銅まで達していないものをワイヤ表面割れ無し(○)、亀裂が銅まで達しているものをワイヤ表面割れ有(×)と評価した。稔回試験は、前川試験機製作所製 装置名TO−202を用いて、約20cmサンプリングしたワイヤの両端を固定して、時計回りに180度、反時計回りに180度回転させ、それを7セット行ったあと、外観を観察した。結果を表1、2に示す。なお、亀裂が銅まで達していたワイヤについては、これ以降の引け巣やHAST評価等を実施しなかったので表中には未実施(−)と示した。
例1で得られた線径18μmのパラジウム被覆銅ボンディングワイヤをケイ・アンド・エス社製の装置(全自動Cu線ボンダー;IConn ProCu PLUS)型超音波装置にてアーク放電電流値(エレクトロン・フレーム・オフ(EFO)電流値)を65mAにして、放電時間を50〜1000μsの範囲で調節し、ボール径約33μm(ワイヤ線径の約1.8倍)のフリーエアーボールを形成した。フリーエアーボール形成雰囲気は、窒素ガス95.0体積%と水素ガス5.0体積%の混合ガスで、ガス流量5.0L/分でワイヤ先端にガスを吹き付けた。形成したフリーエアーボールの先端側(ワイヤネック部と反対側)の略中心を走査型オージェ電子分光分析装置(日本電子社製のJAMP−9500F(装置名))によって深さ方向分析した。オージェ電子分光分析装置の設定条件は、一次電子線の加速電圧10kV、電流50nA、ビーム径5μm、アルゴンイオンスパッタの加速電圧1kV、スパッタ速度2.5nm/分(SiO2換算)である。フリーエアーボールの先端部表面から深さ方向に5.0〜100.0nmまでに等間隔で9点以上分析したときの銅とパラジウムの合計に対する、パラジウムの平均濃度を求めた。分析箇所は具体的には、表面から略0〜30.0nmまでは、1.0nmごとに31箇所、31.0〜60.0nmまでは6nmごとに5箇所、61.0〜480.0nmまでは12.0nmごとに35箇所である。
また、上記と同じ条件で作成した30個のフリーエアーボールについてボール表面の、大きな引け巣の有無をSEMによって観察した。SEM観察写真において、引け巣の最大長が、12μmを超えるものを問題となる引け巣、12μm以下のものを問題とならない引け巣として評価した。なお、図1に問題とならない小さな引け巣のあるフリーエアーボール、図2に問題となる大きな引け巣のあるフリーエアーボールを表し、引け巣を写真中に破線で囲って示した。問題となる大きな引け巣は、図2に示されるように、フリーエアーボール表面に形成される大きなしわのような溝である。引け巣のないもの及び問題とならない程度の小さな引け巣を生じたものを引け巣無し(○)、問題となる引け巣が1個でもあったものを引け巣有り(×)と評価した。
各例で得られたパラジウム被覆銅ボンディングワイヤについて、上記同様の全自動ボンダー装置にて、BGA(ball grid array)基板上の厚さ400μmのSiチップ上の厚さ2μmのAl−1.0質量%Si−0.5質量%Cu合金電極上に、それぞれ上記フリーエアーボールの作製条件と同様の条件でフリーエアーボールを作製し、圧着径50μm、ループ長2mmで1,000本のワイヤボンディングを行った。この際、チップ上のAl−1.0質量%Si−0.5質量%Cu合金電極は隣り合うボンド部のみが電気的に接続されて、隣り合う2本のワイヤ同士で電気的に1つの回路を形成しており、計500回路が形成される。その後、このBGA基板上のSiチップを市販のトランズファーモールド機(第一精工製株式会社、GPGP−PRO−LAB80)を使って樹脂封止して試験片を得た。
この試験片についてHAST装置(株式会社平山製作所、PCR8D)を用いて、130℃×85.0%RH(相対湿度)で400時間及び600時間保持した。各々の時間において保持前後に上記500回路の電気抵抗値を測定し、保持後の電気抵抗値が保持前の電気抵抗値の1.1倍を超えた回路が一つでもあると不良(×)、500回路全てにおいて抵抗値が1.1倍未満であった場合は優良(◎)と評価した。なお、封止した樹脂は市販されているハロゲンフリーではない樹脂を使用した。400時間保持後では、すべてのサンプルで電気抵抗は1.1倍未満であった。
また、試験片についてHTS装置(アドバンテック社製、DRS420DA)を用いて、220℃で2000時間保持した。保持前後に上記同様に500回路の電気抵抗値を測定し、保持後の電気抵抗値が保持前の電気抵抗値の1.1倍を超えた回路が一つでもあると不良(×)、500回路全てにおいて抵抗値が1.1倍未満であった場合は優良(◎)と評価した。なお、封止した樹脂は市販されているハロゲンフリーではない樹脂を使用した。HAST試験及びHTS試験の評価結果を表1、2に示す。表2中の「不良数」は、保持後の電気抵抗値が保持前の電気抵抗値の1.1倍を超えた回路の数である。
次に、パラジウム層上に金層を有するパラジウム被覆銅ボンディングワイヤの特性を確認した。例1、4、7のパラジウム被覆銅ボンディングワイヤの製造過程で、パラジウムを被覆した後、さらに、市販の金めっき浴を用いて金めっきを施した他は例1、4、7と同様にして金の層を有するパラジウム被覆銅ボンディングワイヤを作製した(例33〜35)。なお、表3の各元素の濃度については、金層の金濃度をワイヤ全体に含めずに算出した。
例1において、パラジウム濃度を1.7質量%、硫黄濃度を8質量ppmとしたほかは、例1と同様にして作成したパラジウム被覆銅ボンディングワイヤを用い、例1と同様のフリーエアーボール形成条件によってアルミニウム電極上にボールボンディングを形成した。得られたボール接合箇所を、ワイヤ長手方向の中心線に平行な面が露出するように切断した。切断面を、ワイヤ側の所定箇所から接合面に略垂直方向に走査型電子顕微鏡/エネルギー分散型X線分光分析(SEM−EDX)によってライン分析した。分析条件は、SEM−EDXの設定として、加速電圧6keV、測定領域φ0.18μm、測定間隔0.02μmである。この測定を図4に示すように接合箇所の2か所において行った。得られたSEM−EDXプロファイルを図5及び図6に示す。なお、図5は図4の測定箇所1、図6は測定箇所2の分析結果である。図5、6より、アルミニウム、銅及びパラジウムの合計に対して、アルミニウムが0質量%以上100質量%以下の接合面近傍で検出された、パラジウムの割合5.0質量%以上の領域の幅(深さ)は2点の平均で約1.24μmであった。また例1〜19、例32〜34について同様にパラジウム濃化接合領域を確認する試験を行ったところ、いずれも、アルミニウム、銅及びパラジウムの合計に対して、アルミニウムが0質量%以上100質量%以下の接合面近傍でパラジウムの割合が5.0質量%以上の領域が、0.50μm以上の幅で検出された。
Claims (11)
- 銅を主成分とする芯材と、前記芯材上のパラジウム層とを有し、硫黄族元素(硫黄、セレン又はテルル)を含有するパラジウム被覆銅ボンディングワイヤであって、
前記パラジウム被覆銅ボンディングワイヤの銅とパラジウムと硫黄族元素の合計に対してパラジウムの濃度が1.0質量%以上4.0質量%以下であり、硫黄族元素濃度が合計で50質量ppm以下であり、
硫黄(S)濃度が5質量ppm以上12質量ppm以下であるか、セレン(Se)濃度が5質量ppm以上20質量ppm以下であるか又はテルル(Te)濃度が15質量ppm以上50質量ppm以下であって、
ワイヤ先端に形成されるフリーエアーボールの先端部表面から5.0nm以上100.0nm以下の範囲内に、銅とパラジウムの合計に対して、パラジウムの濃度が平均6.5原子%以上30.0原子%以下となるパラジウム濃化領域を有することを特徴とするパラジウム被覆銅ボンディングワイヤ。 - 前記パラジウム被覆銅ボンディングワイヤの、銅とパラジウムと硫黄族元素の合計に対して、前記パラジウム層由来のパラジウム濃度が1.0質量%以上2.5質量%以下である請求項1に記載のパラジウム被覆銅ボンディングワイヤ。
- 前記パラジウム被覆銅ボンディングワイヤの線径は10μm以上30μm以下である請求項1又は2に記載のパラジウム被覆銅ボンディングワイヤ。
- 前記パラジウム濃化領域のパラジウム濃度は、オージェ電子分光分析条件が装置の設定条件として、一次電子線の加速電圧10kV、設定値から算出される測定領域が15μm2以上20μm2以下、アルゴンイオンスパッタの加速電圧1kV、スパッタ速度2.5nm/分(SiO2換算)で測定したときの濃度である請求項1乃至3のいずれか1項に記載のパラジウム被覆銅ボンディングワイヤ。
- 前記硫黄族元素の50.0%以上は、前記パラジウム層内に含まれる請求項1乃至4のいずれか1項に記載のパラジウム被覆銅ボンディングワイヤ。
- 前記硫黄族元素の50.0%以上は、前記パラジウム被覆銅ボンディングワイヤの表面から、パラジウムと銅の合計に対してパラジウムが50.0原子%となる部位との間に含有される請求項1乃至5のいずれか1項に記載のパラジウム被覆銅ボンディングワイヤ。
- 前記パラジウム層の表面に金の層を有する請求項1乃至6のいずれか1項に記載のパラジウム被覆銅ボンディングワイヤ。
- 前記パラジウム被覆銅ボンディングワイヤ全体に占める硫黄(S)濃度が6質量ppm以上10質量ppm以下である請求項1乃至7のいずれか1項に記載のパラジウム被覆銅ボンディングワイヤ。
- 前記パラジウム被覆銅ボンディングワイヤ全体に占めるセレン(Se)濃度が6質量ppm以上15質量ppm以下である請求項1乃至8のいずれか1項に記載のパラジウム被覆銅ボンディングワイヤ。
- 前記パラジウム被覆銅ボンディングワイヤ全体に占めるテルル(Te)濃度が16質量ppm以上45質量ppm以下である請求項1乃至9のいずれか1項に記載のパラジウム被覆銅ボンディングワイヤ。
- 銅を主成分とする芯材と、前記芯材上のパラジウム層とを有し、硫黄族元素を含有し、銅とパラジウムと硫黄族元素の合計に対してパラジウムの濃度が1.0質量%以上4.0質量%以下であり、硫黄族元素濃度が合計で50質量ppm以下であり、硫黄(S)濃度が5質量ppm以上12質量ppm以下であるか、セレン(Se)濃度が5質量ppm以上20質量ppm以下であるか又はテルル(Te)濃度が15質量ppm以上50質量ppm以下であるパラジウム被覆銅ボンディングワイヤの製造方法であって、
銅を主成分とする銅線材を準備し、前記銅線材の表面に前記硫黄族元素を含むパラジウム層を形成することを特徴とするパラジウム被覆銅ボンディングワイヤの製造方法。
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JP2017092078A (ja) * | 2015-11-02 | 2017-05-25 | 田中電子工業株式会社 | ボールボンディング用貴金属被覆銅ワイヤ |
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CN113518687A (zh) * | 2019-04-26 | 2021-10-19 | 贺利氏材料新加坡有限公司 | 经涂覆线材 |
CN113518687B (zh) * | 2019-04-26 | 2023-03-10 | 贺利氏材料新加坡有限公司 | 经涂覆线材 |
JPWO2020246094A1 (ja) * | 2019-06-04 | 2020-12-10 | ||
WO2020246094A1 (ja) * | 2019-06-04 | 2020-12-10 | 田中電子工業株式会社 | パラジウム被覆銅ボンディングワイヤ、パラジウム被覆銅ボンディングワイヤの製造方法、これを用いた半導体装置及びその製造方法 |
CN113825849A (zh) * | 2019-06-04 | 2021-12-21 | 田中电子工业株式会社 | 钯覆盖铜接合线、钯覆盖铜接合线的制造方法、使用了其的半导体装置及半导体装置的制造方法 |
JP7168779B2 (ja) | 2019-06-04 | 2022-11-09 | 田中電子工業株式会社 | パラジウム被覆銅ボンディングワイヤ、パラジウム被覆銅ボンディングワイヤの製造方法、これを用いた半導体装置及びその製造方法 |
TWI786381B (zh) * | 2019-06-04 | 2022-12-11 | 日商田中電子工業股份有限公司 | 鈀被覆銅接合線、鈀被覆銅接合線的製造方法、使用該接合線的半導體裝置及其製造方法 |
CN113825849B (zh) * | 2019-06-04 | 2024-02-13 | 田中电子工业株式会社 | 钯覆盖铜接合线、钯覆盖铜接合线的制造方法、使用了其的半导体装置及半导体装置的制造方法 |
JP7269361B2 (ja) | 2019-10-01 | 2023-05-08 | 田中電子工業株式会社 | ワイヤ接合構造とそれに用いられるボンディングワイヤ及び半導体装置 |
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MY193999A (en) | 2022-11-07 |
TW202020235A (zh) | 2020-06-01 |
TWI761637B (zh) | 2022-04-21 |
KR20210080417A (ko) | 2021-06-30 |
US20210280553A1 (en) | 2021-09-09 |
WO2020110313A1 (ja) | 2020-06-04 |
CN113169077A (zh) | 2021-07-23 |
JP2020088172A (ja) | 2020-06-04 |
PH12021551183A1 (en) | 2021-12-06 |
KR102537247B1 (ko) | 2023-05-26 |
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