TWI395823B - 包鈀（Ｐｄ）銅球銲接合線 - Google Patents

包鈀（Ｐｄ）銅球銲接合線 Download PDF

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Publication number
TWI395823B
TWI395823B TW101148611A TW101148611A TWI395823B TW I395823 B TWI395823 B TW I395823B TW 101148611 A TW101148611 A TW 101148611A TW 101148611 A TW101148611 A TW 101148611A TW I395823 B TWI395823 B TW I395823B
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Taiwan
Prior art keywords
palladium
copper
gold
layer
wire
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TW101148611A
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English (en)
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TW201315821A (zh
Inventor
Mitsuo Takada
Tsutomu Yamashita
Hiroyuki SHIGYOU
Takeshi Kuwahara
Junichi Okazaki
Shigeru Saito
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Tanaka Electronics Ind
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Publication of TW201315821A publication Critical patent/TW201315821A/zh
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Publication of TWI395823B publication Critical patent/TWI395823B/zh

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    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
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Description

包鈀(Pd)銅球銲接合線
本發明係有關於一種用於以球銲接合半導體元件上之電極與電路配線基板的配線之包鈀銅導線。
目前，以球銲接合半導體元件上的電極與外部端子之間的接合線，主要係使用線徑15~30μm左右之金線。但是，因為近年金塊價格飆漲，以線徑10~25μm左右之銅線，取代目前為止的高純度4N(純度係超過99.99質量%)之金線正受到注目。
此銅線也正考慮利用在與金線相同的領域，例如在組裝關係中，於現行的使用導線架之QFP(Quad Flat Packaging)之外，檢討應用在基板、使用聚醯亞胺膠帶等之BGA(Ball Grid Array)、CSP(Chip Scale Packaging)等之新形態，而被要求研發出更加提高以球銲接合時之環路性、接合性及量產使用性等之球銲接合線。
另外，成為銅線之接合線之接合對象之材質也與金線之情形相同，其中，在矽基板上之配線及電極材料中，配合先前之鋁(Al)合金焊墊，而適合更細微配線之高純度銅(Cu)也正被實用化。又，在導線架上施加有銀(Ag)電鍍、金(Au)電鍍、甚至在鎳(Ni)電鍍上實施鈀(Pd)電鍍等，又，在樹脂基板及膠帶上，施加銅(Cu)配線，在此之上施加金(Au)等的貴金屬元素及其合金膜之情形很多。對應此種之接合對象，被要求提高銅(Cu) 導線之接合性及接合部可靠性。
當初係予以考慮利用高純度3N~6N系(純度係99.9質量%以上~純度99.9999質量%以上)之銅(Cu)線。但是，銅線有容易氧化之缺點。因此，提案有一種在Cu或Cu-Sn等芯材之外周設置0.002~0.5μm之Pd、Pd-Ni、Pd-Co等之被覆層，而能改良耐蝕性及強度之構造(參照專利文獻1)。而且，提案有一種在此鈀(Pd)層被覆金(Au)等貴金屬層之接合線(參照專利文獻2~專利文獻4)。
但是，當使此種銅線使用在置於80℃~200℃之高溫下的環境之半導體用途時，即使欲很好地接合至鋁(Al)等焊墊，鋁(Al)之氧化物係自焊墊與導線之接合界面成長，而接合界面有時會剝離。
另外，相對於此，已知當能分散鈀(Pd)到焊墊與導線之接合界面時，能抑制鋁(Al)氧化物之成長(非專利文獻1)。
〔先行技術文獻〕 〔專利文獻〕
〔專利文獻1〕日本實開昭60-160554號公報
〔專利文獻2〕日本特開昭62-97360號公報
〔專利文獻3〕日本特開2005-167020號公報
〔專利文獻4〕WO2011-13527號公報
〔專利文獻5〕日本專利第3024584號公報
〔非專利文獻〕
〔非專利文獻1〕2006年7月SEI技術評論第169號P47~51，「混合動力接合線之開發」改森信悟 其他2人
鈀被覆銅導線雖然自先前即眾所周知，但是，主要係用於容易氧化的銅芯材之防止氧化或對於鈀被覆導線架進行楔焊之物件，其中，即使單獨設置此種鈀被覆層，在熔融球形成時，也被取入芯材之銅中，而無法成為必要濃度之鈀分散至重要的球表面層者。
一般此等鈀被覆層係素材之鈀較昂貴，所以比較薄，相對於銅(Cu)之芯材而言，昂貴的鈀(Pd)被覆層所佔之比例小於1/20，所以，在形成銅(Cu)球之同時，鈀(Pd)擴散入銅(Cu)中，而無法使鈀(Pd)均勻細微地分散至熔融球之外側。
又，記載於專利文獻4之鈀被覆銅導線，雖然係用於進行與鈀被覆導線架之楔接合之導線，但是，在鈀被覆層之表面形成具有3~80nm厚度之包含有金與鈀之合金層。
但是，如此一來，即使進行鈀之合金化，也會擴散至芯材之銅中，無法形成熔融球表面之鈀分散層。
本發明者係使熔點比芯材之銅(Cu)還要低之金(Au)配置在芯材之銅(Cu)外側，將金(Au)當作水引子而使芯材之銅(Cu)先熔融，使熔點比銅(Cu)還要高之鈀(Pd)較慢熔融，藉此，成為能使鈀(Pd)均勻細微地分散到熔融球外側之構造。因此， 在鈀(Pd)上形成金(Au)之被覆層後，實施中程度之熱處理，使金(Au)與鈀(Pd)不合金化，利用所謂史托藍斯基．庫拉司塔諾夫成長，在金(Au)之被覆層中三維成長鈀(Pd)，形成混雜有金(Au)及鈀(Pd)之混合層者。
藉此史托藍斯基．庫拉司塔諾夫型成長而形成之組織，產生在極薄之金屬層，形成自基底金屬成長之島嶼構造，損及表面層之平坦性係眾所周知(專利文獻5)，但是，在本發明之構成中，藉此史托藍斯基．庫拉司塔諾夫型成長而形成之組織，係形成在鈀被覆層上之金層極薄，在厚度不超過數nm之金層中，鈀係三維成長以形成，成為細微的鈀相與金(Au)相混合之構造。
金(Au)與鈀(Pd)原來在全部比例皆完全混合，結晶格子係約僅4.9%的些許不同，所以，金(Au)/鈀(Pd)二層之密著性很優良，在金(Au)層極薄之情形下，利用史托藍斯基．庫拉司塔諾夫成長，能在金(Au)層表面析出鈀(Pd)基底層。
而且，此金(Au)與鈀(Pd)混合之混合層係不穩定，金(Au)與鈀(Pd)之純度愈高則愈容易合金化。在此，本發明人等為穩定化此金(Au)與鈀(Pd)混合之混合層，在高溫使氫氣接觸鈀(Pd)表面，在鈀(Pd)中吸收氫原子，使此混合層更穩定化。在熱處理後，當事先混入乙醇等酒精到急冷的水溶液時，取入酒精熱分解後之氫原子，到急冷之鈀(Pd)表面層，所以更佳。
本發明人等藉適宜調整連續伸線後之最終熱處理，合併進行利用前述史托藍斯基．庫拉司塔諾夫成長之熱處理，與調質銅(Cu) 接合線之拉伸強度之最終退火，在短時間之最終熱處理之後，液體冷卻導線，藉此，能確實保持更穩定化之金(Au)與鈀(Pd)混合的混合層之構成。
而且，本發明人等藉適宜調整連續伸線後之最終熱處理，合併進行利用上述史托藍斯基．庫拉司塔諾夫成長之熱處理、在鈀(Pd)中吸收氫原子之高溫處理、及調質銅(Cu)接合線之拉伸強度之最終退火，在短時間之最終熱處理之後，以液體冷卻導線，藉此，能確實保持更穩定化之金(Au)與鈀(Pd)混合之混合層之構成。
本發明係將解決上述課題當作目的，具體說來係將以下的構成當作特徵。
(1)本發明之球銲用被覆銅導線，係由銅(Cu)或銅合金所構成的芯材、及由純度99質量%以上之鈀(Pd)所構成的中間被覆層所構成，其線徑係10~25μm，其特徵在於：形成有由掃瞄式電子顯微鏡觀察而得剖面平均厚度係5nm以下之金(Au)-鈀(Pd)混合層，前述中間被覆層係純度99質量%以上之鈀(Pd)，而且在該中間層上形成金(Au)之最上層，在該中間被覆層之與芯材相反側之接合界面上，前述鈀(Pd)與純度99.9質量%以上之金(Au)藉熱成長而混雜，此混合層之鈀表面係經予氫擴散處理。
本發明之球銲用被覆銅導線之具體態樣如下。
(2)前述混合層剖面之平均厚度係3nm以下之記載於上述(1)的球銲用被覆銅導線。
(3)前述混合層剖面之平均厚度係1nm以下之記載於上述(1)的球銲用被覆銅導線。
(4)前述鈀(Pd)係被濕式電鍍之記載於上述(1)的球銲用被覆銅導線。
(5)前述混合層係對於被強伸線加工過之被覆有金(Au)及鈀(Pd)之銅導線，利用史托藍斯基．庫拉司塔諾夫成長，在金(Au)之被覆層中三維成長鈀(Pd)，形成混雜有金(Au)及鈀(Pd)之混合層之記載於上述(1)的球銲用被覆銅導線。
(6)前述混合層係對於經予強伸線加工過的被覆有金(Au)及鈀(Pd)之銅導線，在450℃~700℃之含有氫氣之惰性環境氣體下進行過熱處理之記載於上述(1)的球銲用被覆銅導線。
(7)前述金(Au)係在室溫被磁控濺鍍之記載於上述(1)的球銲用被覆銅導線。
(8)中間被覆層係經予濕式電鍍之鈀(Pd)之記載於上述(1)的球銲用被覆銅導線。
(9)前述芯材之銅(Cu)係純度超過99.999質量%之銅(Cu)之記載於上述(1)的球銲用被覆銅導線。
(10)前述芯材之銅(Cu)係純度超過99.9999質量%之銅(Cu)之記載於上述(1)的球銲用被覆銅導線。
(11)前述芯材之銅合金係由0.1~500質量ppm之磷(P)及剩下部分之銅(Cu)所構成的記載於上述(1)之球銲用被覆銅導線。
(12)前述芯材之銅合金係由0.5~99質量ppm之鋯(Zr)、使錫 (Sn)、釩(V)、硼(B)及鈦(Ti)中之至少一種為總量包含0.5~99質量ppm、及剩下部分為純度超過99.9質量%之銅(Cu)所構成的記載於上述(1)之球銲用被覆銅導線。
(13)前述芯材之銅合金係由0.5~99質量ppm之鋯(Zr)、使錫(Sn)、釩(V)、硼(B)及鈦(Ti)中之至少一種為總量包含0.5~99質量ppm、0.1~500質量ppm之磷(P)及剩下部分為純度超過99.9質量%之銅(Cu)所構成的記載於上述(1)之球銲用被覆銅導線。
當使用本發明時，在第1焊接之熔融球形成時，首先，使容易熔化的金(Au)做為水引子以熔融芯材之銅(Cu)，接著，接觸到銅(Cu)之鈀(Pd)熔融，最後，吸收有氫原子之表面之鈀(Pd)也熔融，所以，能使鈀(Pd)均勻細微地分散至與焊墊上之鋁(Al)界面相接的熔融球之表面。
又，本發明藉適當調整純度99.9質量%以上的金(Au)之膜厚及最終熱處理，不形成金(Au)與鈀(Pd)之合金層，能形成金(Au)與鈀(Pd)混雜的混合層。
而且，藉導入氫氣至最終熱處理中，使露出金(Au)表面層之鈀(Pd)與氫分子反應，使氫原子吸收在鈀(Pd)內部，能使金(Au)與鈀(Pd)混雜的混合層更確實地穩定化。
在本發明之導線構造中，在第1焊接之熔融球形成時，首先，在史托藍斯基．庫拉司塔諾夫構造之最表層中，熔點最低(1064 ℃)之金(Au)開始熔融，使混雜在相同層中之鈀伴隨流動，覆蓋自中間層之鈀層至導線端面露出的銅芯材表面。
銅(Cu)之熔點(1085℃)係比金(Au)與鈀(Pd)還要高，但是，直接接觸在導線端面熔融之金(Au)而快速熔融，可以說使熔融的金(Au)當作水引子而快速熔融以形成球。
在導線之構造中，熔點最高(1555℃)之鈀(Pd)，係經予考慮成首先銅熔融時，其周圍暫時殘留呈薄鞘狀，但是，在銅之熔融球形成時，一邊熔融一邊被取入銅熔融球中以進行擴散，另外，隨著先行熔融之金(Au)以到達導線端面之混合層之鈀，係比吸收之氫原子還要穩定化，而不合金化地最後熔融，在球表面附近偏析以維持較高的鈀(Pd)濃度。
本發明之接合線係具有上述構造，所以，即使長期間放置，在導線與焊墊之銲接接合界面也不會產生鋁氧化物等，長期間之高溫穩定性很優良。
在本發明之被覆銅導線中，超極薄表面層之理論厚度之上限係10nm，其上限最好係8nm，上限小於7nm則更佳。在此，所謂「理論厚度」係直接測量此種超極薄的全表面層非常困難，所以，自連續伸線前的乾式電鍍時之表面層厚度，以比例計算求出者。
在求出「理論厚度」時之比例定數，係做為接合線之連續伸線結束後之線徑，除以連續伸線開始前的導線直徑所得之值。實際之厚度雖然可以高倍率掃瞄式電子顯微鏡直接觀察，但是，即 使以理論厚度觀之也係奈米等級，所以，也只能獲得其概略之平均厚度。其愈薄則金(Au)與鈀(Pd)之史托藍斯基．庫拉司塔諾夫成長愈容易產生。反之，當太厚時，金(Au)彼此之相互作用比金(Au)與鈀(Pd)之相互作用還要強，而鈀(Pd)無法自金(Au)表面露出，無法使氫原子被吸收到鈀(Pd)內。
超極薄之金(Au)表面層，自附著轉繞性及與中間被覆層之接合性之觀點觀之，由濺鍍法所做之鍍膜較佳。藉濺鍍法所鍍膜之金(Au)等即使純度超過99.9質量%，藉氣體分子之衝撞也會變成硬質，附著轉繞性很優良。金(Au)之表面層，係在冷間連續伸線時，進入相對更硬之鈀(Pd)析出物之細微凹凸之接合界面內部，在冷間伸線中，牢固地被接合。
而且，以濺鍍法鍍膜之金(Au)等之超極薄表面層，係在線材之圓周方向之剖面形狀，無法成為幾何學上均勻的圓形膜，但是，藉熔融球形成時之表面張力，被迅速吸收入芯材之銅(Cu)中，表面層之不均勻被消除，而形成真球狀的熔融球。
芯材之最佳態樣，係芯材由含有1~80質量ppm磷(P)、剩下部分係純度99.999質量%以上之銅(Cu)所構成。磷(P)即使為微量，具有提高銅導線之再結晶溫度之效果，也能使導線本身之強度更硬。在此，所謂「純度99.999質量%以上」，係磷(P)及銅(Cu)以外之金屬不純度未滿0.001質量%，存在於銅(Cu)中之氧或氮或碳等氣體狀元素則除外。當芯材含有既定量之磷(P)時，在第1打線中熔融之銅球凝固之過程中，產生銅(Cu)球之 脫氧作用。當銅(Cu)之純度超過99.999質量%時，磷(P)在1質量ppm以上之範圍進行脫氧作用，當小於80質量ppm時，在伸線時，銅(Cu)芯材不會加工硬化。藉此磷(P)之脫氧作用，即使芯材之銅(Cu)有氧化之部分，在熔融球之表面層附近，藉磷(P)濃縮，銅(Cu)之氧化會斷裂消失，藉此，能使得在形成熔融球時，芯材之銅(Cu)已氧化之部分沒有影響。
中間層係由鈀(Pd)構成。鈀(Pd)之熔點(1554℃)係比銅(Cu)之熔點(約1085℃)或添加微量元素之銅合金之熔點皆高。因此，在芯材之銅(Cu)或銅合金形成球狀之熔融球之最初階段，鈀(Pd)成為薄皮，防止自熔融球之側面開始之氧化。
鈀中間層之純度，不影響熔融球之真球性，不論薄或厚皆不偏心，但是，因為連續伸線，必須要純度99質量%以上之鈀(Pd)。中間層之厚度雖然可適當決定，但是，鈀(Pd)中間層愈厚，則銅(Cu)或銅合金之芯材之劣化愈慢。
在鈀(Pd)中間被覆層之形成方法中，可利用乾式電鍍或濕式電鍍。乾式電鍍可利用濺鍍法、離子鍍法、真空蒸著等。自避免不純物混入之觀點觀之，最好係乾式電鍍，但是，為獲得剖面均勻之圓環形狀，也可以利用濕式電鍍。
銅(Cu)係純度較高，所以，為維持其純度，鈀(Pd)之電解電鍍浴也最好係不含鹵素離子或硫酸離子之氨性水溶液或氰基系水溶液。又，高分子化合物或金屬鹽之光澤劑係給予熔融球之真球性不良影響，所以，最好不含在膜成分。被電解電鍍在銅(Cu) 等之芯材上之膜，藉之後之連續伸線而被強壓縮加工，所以，膜性狀不如膜成分重要。因為當在膜成分存在硫(S)時，在熔融球形成時，會混入銅(Cu)而有加工硬化熔融球之虞。
鈀(Pd)電解浴可利用鈀p-鹽(Pd(NH3 )2 (NO2 )2 )、亞硝酸氨及硝酸鉀，或者，鈀p-鹽(Pd(NH3 )2 (NO2 )2 )、硝酸氨及氨水等弱鹼性氨性水溶液、Pd(NH3)2 (COO)2 及(NH4 )2 HPO4 之中性氨性水溶液(美國專利第S4715935號)等。在使用鈀p-鹽之浴中，PH值愈高，析出物之粒徑有愈大的傾向。當乾式電鍍鈀(Pd)時，為防止濺鍍膜等之異常析出，銅(Cu)之純度超過99.999質量%比純度99.99質量%還要好。
而且，在熔融球形成時，為調整金(Au)表面極薄層溶入銅(Cu)芯材之時機，在鈀(Pd)電鍍前，也可以實施鈀(Pd)或白金(Pt)或鎳(Ni)等之正球電鍍(極薄電鍍)。
在由電弧放電而得的熔融球形成中，各被覆層中的金屬之熔點非常重要。接合線之大部分係被高純度之銅(Cu)芯材所佔有，所以，銅(Cu)之熔點(約1085℃)成為基準。芯材之高純度之銅(Cu)，藉在還原性環境氣體中之電弧放電，成為完全的真球形狀係眾所周知。
又，被覆有鈀(Pd)之高純度銅(Cu)，也藉在非氧化性環境氣體中之電弧放電，成為真球形狀係眾所周知。鈀(Pd)之熔點(約1555℃)係比銅(Cu)之熔點(約1085℃)還要高，所以，被考慮成在非氧化性環境氣體中，銅(Cu)係成為真球形狀，但 是，其係被拖拉而成為真球形狀。
但是，高純度之金(Au)之接合線係不管環境氣體，當藉電弧放電而形成熔融球時，儘管可獲得真球狀之熔融球，使高純度之金(Au)直接被覆在高純度銅(Cu)之芯材上的接合線，係成為槍狀，無法獲得真球狀之球。金(Au)之熔點(約1064℃)係比銅(Cu)之熔點(約1085℃)還要低，所以，在銅(Cu)形成球狀之熔融球之階段，低熔點之金(Au)表面層比銅(Cu)還早熔解以快速包覆導線端面，但是，高熔點之鈀(Pd)成為障礙。結果，被考慮成低熔點之金(Au)優先擴散入銅(Cu)中，被熔融銅(Cu)吸收，之後，鈀(Pd)則熔融。銅(Cu)中之微量添加元素幾乎不影響熔融現象。
如此一來，在一般的鈀被覆銅導線中，最表層之金(Au)層之厚度雖然會影響熔融球之真球性，但是，在本發明中，如上所述，先行熔融之金(Au)係在導線端面中，促進銅(Cu)之熔解，但是，本發明中之金(Au)-鈀(Pd)混合層係數nm等級，其中，金(Au)之量係微量，所以，其影響被抑制，不會對熔融球之真球性產生不良影響。
鈀(Pd)中間層之濕式電鍍，係不含有流平劑或光澤劑等，所以，有析出不規則粒狀之傾向。又，其乾式電鍍係有沿著高純度銅(Cu)之芯材之結晶面，成層狀析出之傾向。上述之情形係導線剖面皆不為完全圓輪形狀，但是，只要表面層之厚度超過1nm就足夠。
高純度之金(Au)等之表面層，係不僅由濺鍍達成附著環繞，可在濺鍍中使導線為軸心，一邊旋轉一邊移動，或者，在濺鍍中往復移動導線，或者，自導線兩側濺鍍，以使高純度之金(Au)能在中間被覆層上，析出更均勻之厚度。高純度之金(Au)等之表面層係延展性很優良，所以，能隨著鑽石模之模孔形狀，連續伸線加工至最終線徑。在連續伸線中，金(Au)等之表面層與中間被覆層之界面之間隙被掩埋，即使在鈀(Pd)中間層之濕式電鍍時有異常析出等，也不會機械性突破表面層以析出，接合線之表面係被金(Au)等全面性被覆。
連續伸線係在冷卻液中進行之濕式伸線較佳。因為最表層之被覆層較薄，所以，在乾式伸線中，藉伴隨著強壓縮作用之熱，超極薄之表面層之金(Au)有往銅(Cu)擴散而消失之虞。為降低鑽石模與金(Au)之摩擦阻力，在使添加市售之界面活性劑之金屬潤滑液，以水或酒精等稀釋液稀釋後使用之外，也可以在僅含有乙醇、甲醇或異丙醇之水溶液等之溶液中連續伸線。
【實施例1】
以下，說明實施例。
將記載於表1之自銅(Cu)塊伸線加工至500μm線徑之銅導線當作芯材，以通常之方法，在該導線表面使鈀(Pd)中間層之電解電鍍析出2.0μm。此鈀(Pd)電鍍浴，係使用添加10gW/l之磷酸鹽至中性之二亞硝基二氨鈀浴之物件，所得的鈀(Pd)純度係99%。接著，在室溫磁控濺鍍純度99.99質量%之金(Au)， 而析出0.08μm。而且，電鍍厚度係以俄歇電子能譜法(AES)測量。
之後，使此被覆銅導線以模具伸線至最終直徑之17μm。金(Au)之理論膜厚係0.0027μm。接著，去除加工應變，實施既定之最終熱處理，使得拉伸值為10%左右。最終熱處理條件係在5%氫氣+氮氣之環境氣體中，以8m/秒通過700℃之50公分之熱處理爐，在10%之乙醇水溶液(20℃)中冷卻。
【實施例2】
使以與實施例1相同之條件製造的被覆銅導線，在5%氫氣+氮氣之環境氣體中，以5m/秒通過600℃之熱處理爐，在純水(40℃)中冷卻。
〔比較例1〕
使純度99質量%之金(Au)藉純金電鍍(日本電子表面處理工程股份有限公司製之OTORONEKUSU系列GVC-S)浴，析出0.0027μm(理論膜厚0.0027μm)，除在氮氣之環境氣體中，以5m/秒通過550℃之熱處理爐之外，其餘與實施例1相同。
〔比較例2〕
使最終熱處理條件，除在5%氫氣+氮氣之環境氣體中，以8m/秒通過800℃之熱處理爐之外，其餘與實施例2相同。
關於以上之實施例及比較例之導線，使製造條件表示於表2。
關於以上的實施例及比較例之線材，在鋁電極上進行銲接及楔接合，進行高溫可靠性評估、接合強度性及軸上偏心評估。
使這些接合條件、實驗條件及評估結果表示於下。
在接合線之連接中，係使用市售自動導線接合器(K&S股份有限公司製之超音波熱壓著接合器「MAXμm Ultra(商品名)」)進行球/楔接合。熔融球係使用MAXμm plus Copper Kit，使用以流量0.5(l/min)混合4體積%氫氣與剩下部分為氮氣所構成的 氣體，在環境氣體中，藉電弧放電在導線尖端製作球。
使此等接合在矽基板上之0.8μm鋁(Al-0.5%Cu)電極膜上，使導線另一端楔接合在已電鍍4μm銀(Ag)的200℃之導線架(材質係42合金，膜厚係150μm)上。毛細管使用SPT公司製品，關於熔融球之導線接合器之設定值係將EFO Fire Mode當作Bal Size，FAB Size係調整使得實際的熔融球直徑成為導線直徑之兩倍。調整接合時之接合條件，使得壓著直徑成為導線直徑之2.5倍。
高溫可靠性評估
在上述條件予以接合，第1接合部係在鋁(Al-0.5%Cu)電極膜上使用已接合過的樣品，第2接合部係在已電鍍銀(Ag)的導線架上使用已接合過的樣品。該樣品之第1接合部之焊墊形狀係由90μm正方形所構成，以100μm節距配置。又，電路設計使得鄰接的第1接合部係局部通電。在接合後，以含有鹵素之市售密封樹脂進行樹脂成形後，切斷多餘的拉桿等，之後，在175℃處理兩小時，最後，在220℃之高溫加熱爐放置任意時間。電阻使用KEITHLEY公司製之製品名「SOURCEMETER(型式2004)」，以專用IC插座及為專用而構築之自動測量系統予以進行。測量方法以所謂直流四端子法予以測量。自測量用探針流入一定電流至鄰接的外部導線間(選擇IC晶片上的焊墊短路之對)，測量探針間之電壓。電阻係對於外部導線100對(200端子)，進行放置前與放置後之電阻測量，電阻上升率成為20%以上則為不良。良否判定係 直至樣品不良率達到50%為止的時間，時間愈長者愈佳。如果時間係超過200小時時，判斷在實用上沒有較大問題則標示◎，如果係150~200小時則標示○，100~150小時則標示△，小於100小時則標示×。
此等結果表示於表3。
接合強度性評估
接合強度性評估係不使用前述鋁(Al-0.5%Cu)電極膜，使導線兩端球/楔接合至已電鍍4μm銀(Ag)的200℃導線架(材質係42合金，膜厚係150μm)上。打線3920支之導線，不壓著次數係0~1支則標示◎，2~3支則標示○，4~20支則標示△，超過21支則標示×。
此等結果表示於表4。
軸上偏心評估
軸上偏心評估係使用K&S股份有限公司製之超音波熱壓著接合器「MAXμmUltra(商品名)」，將Loop Parameter當作FAB Mode，連續製成FAB以實施評估。接合係連續接合在厚度4μm之已電鍍銀(Ag)電的200℃導線架上，不使用鋁(Al-0.5%Cu)電極膜。而且，關於其他接合之設定值，係與上述鋁(Al-0.5%Cu)電極膜之損壞評估同樣地進行。判定係觀察200個接合前之熔融球形狀，判定軸上偏心及尺寸精度是否良好等。測量相對於導線而言，球位置之偏心超過5nm之個數，當偏心小於一個時，因為球形成良好，所以標示◎，如係2~4個則判斷實用上無較大問題且標示○，當5~9個時則標示△，當超過10個時則標示×。
此等結果表示於表5。
由以上各表之評估結果，實施例1與實施例2，如表2所示，熱處理條件及冷卻條件不同，混合層之厚度幾乎沒有差異，但是，在評估中，有降低少許。相對於此，比較例1係在混合層之厚度無差異，但是，在熱處理環境氣體中未添加氫氣，所以，無法獲得較佳結果。又，Au被覆方法係Au電鍍，所以，與濕式電鍍相比較下，膜之密著性及緻密性較低，局部性存在不均勻的膜厚，或者，含有很多添加劑或PH調整材等不純物，所以，無法獲得較佳結果。
又，比較例2係熱處理溫度過高，所以，混合層之厚度大幅超過本發明之範圍而肥大，無法獲得較佳效果。
亦即，可知混合層之厚度係決定性的，又，添加氫氣之效果很大。
[產業上可利用性]
本發明之球銲用被覆銅導線，係持續維持由高純度銅芯材而得的低電阻性及便宜等性質，在高溫環境氣體中，對於鋁電極具有很高的接合可靠性，能廣泛適用於各種用途。

Claims (14)

  1. 一種球銲用被覆銅導線，由銅(Cu)或銅合金所構成的芯材、及由純度99質量%以上之鈀(Pd)所構成的中間被覆層所構成，其線徑係10~25μm，其特徵在於：於最上層形成有由掃瞄式電子顯微鏡觀察而得的剖面平均厚度係5nm以下之金(Au)-鈀(Pd)混合層，前述金(Au)-鈀(Pd)混合層係純度99.9質量%以上之金(Au)層，在含有氫氣之環境氣體中予以熱處理，藉此，鈀(Pd)自前述中間層在前述金(Au)層中熱成長，以露出前述金(Au)層表面，同時，該鈀(Pd)經予氫擴散處理。
  2. 依申請專利範圍第1項所述之球銲用被覆銅導線，其中該混合層剖面之平均厚度係小於3nm。
  3. 依申請專利範圍第1項所述之球銲用被覆銅導線，其中該混合層剖面之平均厚度係小於1nm。
  4. 依申請專利範圍第1項所述之球銲用被覆銅導線，其中該鈀(Pd)係經予濕式電鍍。
  5. 依申請專利範圍第1項所述之球銲用被覆銅導線，其中該混合層係對於經予強伸線加工過的被覆有金(Au)及鈀(Pd)之銅 導線，利用史托藍斯基‧庫拉司塔諾夫成長，在金(Au)之被覆層中三維成長鈀(Pd)，形成混雜有金(Au)及鈀(Pd)之混合層者。
  6. 依申請專利範圍第1項所述之球銲用被覆銅導線，其中該混合層係對於經予強伸線加工過的被覆有金(Au)及鈀(Pd)之銅導線，在450℃~700℃之含有氫之惰性環境氣體下進行過熱處理者。
  7. 依申請專利範圍第1項所述之球銲用被覆銅導線，其中該金(Au)係在室溫被磁控濺鍍者。
  8. 依申請專利範圍第1項所述之球銲用被覆銅導線，其中，中間被覆層係經予濕式電鍍的鈀(Pd)。
  9. 依申請專利範圍第1項所述之球銲用被覆銅導線，其中該芯材之銅(Cu)係純度超過99.999質量%之銅(Cu)。
  10. 依申請專利範圍第1項所述之球銲用被覆銅導線，其中該芯材之銅(Cu)係純度超過99.9999質量%之銅(Cu)。
  11. 依申請專利範圍第1項所述之球銲用被覆銅導線，其中該芯材 之銅合金係由0.1~500質量ppm之磷(P)及剩下部分之銅(Cu)所構成。
  12. 依申請專利範圍第1項所述之球銲用被覆銅導線，其中該芯材之銅合金係由0.5~99質量ppm之鋯(Zr)、使錫(Sn)、釩(V)、硼(B)及鈦(Ti)中之至少一種為總量包含0.5~99質量ppm、及剩下部分為純度超過99.9質量%之銅(Cu)所構成。
  13. 依申請專利範圍第1項所述之球銲用被覆銅導線，其中，前述芯材之銅合金係由0.5~99質量ppm之鋯(Zr)、使錫(Sn)、釩(V)、硼(B)及鈦(Ti)中之至少一種為總量包含0.5~99質量ppm、0.1~500質量ppm之磷(P)及剩下部分為純度超過99.9質量%之銅(Cu)所構成。
  14. 依申請專利範圍第1項所述之球銲用被覆銅導線，其中該芯材之銅合金係由0.5~99質量ppm之鋯(Zr)、使錫(Sn)、釩(V)、硼(B)及鈦(Ti)中之至少一種為總量包含0.5~99質量ppm、1~80質量ppm之磷(P)及剩下部分為純度超過99.9質量%之銅(Cu)所構成。
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