TWI479581B - 半導體裝置連接用銅銠合金細線 - Google Patents

半導體裝置連接用銅銠合金細線 Download PDF

Info

Publication number
TWI479581B
TWI479581B TW102116582A TW102116582A TWI479581B TW I479581 B TWI479581 B TW I479581B TW 102116582 A TW102116582 A TW 102116582A TW 102116582 A TW102116582 A TW 102116582A TW I479581 B TWI479581 B TW I479581B
Authority
TW
Taiwan
Prior art keywords
copper
mass
bonding
wire
oxygen
Prior art date
Application number
TW102116582A
Other languages
English (en)
Other versions
TW201415566A (zh
Inventor
Hiroyuki Amano
Michitaka Mikami
Junichi Okazaki
takuya Hamamoto
Shinichiro Nakashima
Tsutomu Yamashita
Syuichi Mitoma
Kosuke Ono
Bin Ryu
Hiroyuki SHIGYOU
Original Assignee
Tanaka Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Electronics Ind filed Critical Tanaka Electronics Ind
Publication of TW201415566A publication Critical patent/TW201415566A/zh
Application granted granted Critical
Publication of TWI479581B publication Critical patent/TWI479581B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group

Description

半導體裝置連接用銅銠合金細線
本發明係關於一種用於以超音波並用熱壓著方式，連接半導體元件上的焊墊電極與外部電極之銅合金細線，且特別有關於一種固溶銠(Rh)在純度99.995質量%以上的銅(Cu)中之銅-銠稀薄合金細線。
隨著近年來黃金價格高漲，以銅合金細線取代目前的4N黃金合金細線，再度受到注目。
適用於此銅合金細線之目前的超音波並用熱壓著接合方法，係在鋁焊墊上，使銅合金接合線保持在氮氣氛圍氣體或氫氣混入氮氣氛圍氣體等之非氧化性氛圍氣體，以電弧輸入熱加熱熔融接合線尖端，藉表面張力形成球後，在150~300℃之範圍內加熱後的半導體元件之電極上，以超硬工具自上方壓著接合線之球部，由其負荷及來自超硬工具之超音波震動之能量，接合銅合金細線與鋁焊墊者。施加超音波之效果，係當用於助長銅合金細線之變形之接合面積擴大時，破壞及去除形成於銅白金合金細線的表面之50~100奈米(nm)左右之表面氧化膜，藉此，使銅(Cu)等之金屬原子在下表面露出，在與相對接觸的接合焊墊之界面上產生塑性流動，一邊漸增彼此密著的新生表面，一邊原子間結合兩者。
雖然到目前為止，於銅(Cu)中固溶有貴金屬之銅合金細線有以下之物件，但是，貴金屬很昂貴，所以，其添加量實際上有其限制。結果，顯現表面經予氧化的銅(Cu)基體本身之特性，在第一次接合中，於超音波連接時經予壓著的接合線之球體之塑性流動中，伴隨加工硬化之動態強度增加，球體變得太硬而產生晶片龜裂，又，當為避免晶片龜裂而在 高溫進行調質熱處理時，銅合金之靜態強度變得太低，而有無法很好地描繪接合回環之課題。
亦即，有在保持一定的靜態強度之狀態下，無法維持做為接合線之動態強度與韌性之平衡之課題。又，有在第二次接合中，產生氧化物之濃度不均，而第二次接合性較差的課題。
此種實例首先有日本特開昭61-020693號公報(下述之專利文獻1)。其係形式上包含金(Au)等貴金屬，但是，實質上，其係使鎂(Mg)、鉿(Hf)等卑金屬以0.001~2重量%含有在銅(Cu)中，藉此，固定合金中之H、O、N、C，抑制氫氣、氧氣、氮氣及一氧化碳之產生(相同公報第2頁右上欄)。但是，當卑金屬之含量成為百分比等級時，其硬度太高，熔融球變得太硬而產生晶片龜裂。
又，有日本特開2008-085320號公報(下述之專利文獻2)。其係一種使鎂及磷之至少一種總計10~700質量ppm，使銀、鈀、白金及金之至少一種總計10~5000質量ppm，使氧在6~30質量ppm之範圍，含有在高純度銅中之半導體裝置用銅合金接合線(相同公報之申請專利範圍第2項)，其抑制接合線球表面的氧化膜之氧，以改善球接合形狀及接合強度。但是，當使其柔軟，亦即，降低硬度及靜態強度，以改善球接合形狀及接合強度時，如上所述，有無法很好地描繪接合回環之課題。
如以上實例所示，目前的銅合金接合線係搭配比較少量之金屬成分，藉此，欲改善銅(Cu)接合線之接合特性。
結果，即使接合線之靜態強度變低，動態強度係較高，產生在球接合時，直至不生成晶片龜裂，鋁焊墊也變形而向上翻轉之所謂「鋁飛濺」，或者，隨著靜態強度之降低而產生斜靠，做為使用無氣球體(FAB)之接合線之欠缺韌性平衡之課題依然未被解決。而且，無氣球體(FAB)雖然通常在混有氫氣之氮氣環境氣體中形成，但是，也有在100%氮氣等之惰 性氛圍中進行。
[先行技術文獻] [專利文獻]
[專利文獻1]日本特開昭61-020693號公報
[專利文獻2]日本特開2008-085320號公報
本發明係將提供一種當在第一次接合超音波接合銅合金細線之球體至鋁焊墊時，不產生鋁飛濺或晶片龜裂，同時在第二次接合之第二次接合性也很優良的銅合金接合線當作解決課題。
本發明人等著眼於目前貴金屬元素中因為昂貴而過去未考慮使用之銠(Rh)，使少量銠合金化至銅(Cu)，藉此，欲達成上述課題者。而且，找到在Cu-Rh合金之情形下，著眼於予以當作銅(Cu)之不純物而被排斥的硫(S)，硫(S)在球接合中，其被當作鋁飛濺或晶片龜裂之原因在於：形成熔融球時，硫(S)在銅(Cu)之球表面偏析以形成高濃度領域，此領域在球接合時，伴隨著壓著球之塑性流動而加工硬化，藉此，所謂動態強度變高，加大對於焊墊電極或晶片之負載。
另外，硫(S)本身若非如此的高濃度時，其係抑制加工硬化者。
又，也著眼於在Cu-Rh合金之情形下，當形成壓著球時，作用在銅(Cu)之動態強度上之氧(O)。
在此，為避免在形成熔融球時，硫(S)偏析在銅(Cu)的球表面，而使金屬成分之銠(Rh)與非金屬成分之既定量的氧(O)固著至銅(Cu)，以固定銅(Cu)基體中之硫。結果，即使超音波並用熱壓著接合熔融球，在接合線變形時也不產生加工硬化，動態強度不變高。而且，藉調質熱處理， 使拉伸率4%時之接合線硬度控制在既定範圍，可控制接合線之靜態強度。
亦即，本發明之半導體裝置的球接合用銅銠合金細線，由銠(Rh)及剩餘部分為99.995質量%以上之銅(Cu)所構成，其特徵在於：在該高純度銅(Cu)基體中，固溶有做為金屬元素之銠(Rh)0.1~1.5質量%、做為非金屬元素之硫(S)1.0~10質量ppm及氧(O)10~150質量ppm。
又，本發明之半導體裝置的球接合用銅銠合金細線，由銠(Rh)及剩餘部分為99.995質量%以上之銅(Cu)所構成，其特徵在於：在該高純度銅(Cu)基體中，固溶有做為金屬元素之銠(Rh)0.1~1.5質量%、做為非金屬元素之硫(S)1.0~10質量ppm、氧(O)10~150質量ppm及磷(P)1~10質量ppm。
做為對於先前之銅(Cu)系細線等之添加元素，銠(Rh)係在貴金屬中也很昂貴，所以不考慮做為%等級之含有元素，又，因此其做為添加元素之效果未被知曉。
但是，銠(Rh)比銅(Cu)不容易氧化。又，銠(Rh)與硫(S)之結合力比銅(Cu)還要強。因此，當使銠(Rh)使用於銅(Cu)富含合金時，銠(Rh)限制氧(O)與銅(Cu)基體中之硫(S)之舉動，即使在形成熔融球時，可抑制硫(S)之表面偏析。結果，即使在熔融球變形時，如果添加既定量之銠(Rh)時，不產生由硫(S)之表面偏析而得的加工硬化，也不產生鋁飛濺。又，銠(Rh)係抑制銅(Cu)之氧化，有使接合線表面之銅(Cu)氧化膜變薄的效果，所以，提高接合線之第二次接合性。
在本發明中，使銠(Rh)之範圍為0.1~1.5質量%之原因在於：當未滿0.1質量%時，無法防止硫(S)之表面偏析，當超過1.5質量%時，顯現由銠(Rh)之合金化而得的強化效果，而動態強度變得太高，產生鋁飛濺或晶片龜裂。為穩定本發明之接合線之接合特性，宜為銠(Rh)係0.3~1.2質量 %，0.4~0.8質量%則較宜。
在本發明中，事先微量添加硫(S)1.0~10質量ppm之原因在於：使接合線具有韌性，而且無斜靠性不良。當硫(S)未滿1.0質量ppm時，其無法具有韌性，當超過10質量ppm時，在球接合時，硫(S)係表面偏析而容易產生鋁飛濺。
又，硫(S)係在熔融球接合時之Cu-Rh合金接合線之變形中，發現動態再結晶，即使接合線塑性變形，加工硬化也比較小，所以，與不含硫(S)之Cu-Rh合金接合線相比較下，其較不易產生鋁飛濺。
又，在本發明中，添加氧(O)10~150質量ppm之原因在於：與銠(Rh)一齊限制銅(Cu)基體中之硫(S)之舉動。當氧(O)未滿10質量ppm時，無法具有效果，當氧(O)超過150質量ppm時，在形成熔融球時，於球表面變得很容易形成氧化膜。
而且，在本發明中，宜為於銅(Cu)基體中固溶有磷(P)1~10質量ppm。因為當在銅(Cu)基體中具有磷(P)1~10質量ppm時，限制氧(O)之移動，增加接合線之韌性。當磷(P)未滿1質量ppm時，無此效果，當磷(P)超過10質量ppm時，使硫(S)與氧(O)之平衡崩潰。
在本發明之接合線中，固溶在基體中之氧(O)、硫(S)及磷(P)之濃度係數質量ppm等級，大概在由原材料素線帶來的所謂不可避免不純物之水準附近，所以，此等之外之不可避免不純物之濃度必須儘可能壓低。很多此等不可避免不純物，如下述比較例3、6所示，會影響接合線之靜態強度及動態強度，妨礙或遮蔽構成本發明之含有元素之效果。
因此，為抑制此等不純物之作用，原料銅(Cu)之純度必須係99.995質量%以上，亦即，不可避免不純物濃度之總量必須未滿50質量ppm。
本發明中之純度99.995質量%以上的銅(Cu)中之不純元素，可例舉銀(Ag)、鐵(Fe)、鎳(Ni)、鉛(Pb)、錫(Sn)、銻(Sb)、砷(As)、鉍(Bi)及鉻(Cr)等。
銅(Cu)之純度係為使顯現銅(Cu)基體之動態強度及韌性，宜為銅(Cu)之純度係99.997質量%以上。
在本發明中，使原料銅(Cu)之純度為99.995質量%以上，同時使銠(Rh)含量保持在0.1~1.5質量%之範圍，藉此，做為非金屬元素之硫(S)1.0~10質量ppm及氧(O)10~150質量ppm，被固溶在金屬基體中，以發揮上述之作用效果。
在本發明中，宜為當連續伸線後之驚予調質熱處理過的銅銠合金細線之維氏硬度在拉伸率4%時，係75~100Hv。銠之添加量係%等級，所以，當銅銠合金細線之硬度變高時，連續伸線後的銅銠合金細線之靜態強度及動態強度容易變高，變得很容易產生鋁飛濺，進而晶片龜裂。宜為維氏硬度係75~85Hv。
中間熱處理溫度可藉銅銠合金細線之成分組成適宜選擇。在中間熱處理時，一般係在非氧化性氛圍氣體，宜為於400℃~900℃進行20~120分鐘，於500℃~650℃進行30~50分鐘則較宜。
調質熱處理係在比此等高溫且短時間(數秒鐘以下)地進行。
在調質熱處理前，接合線於冷間予以連續伸線加工，所以，藉調質熱處理也形成均質的細微再結晶之銅(Cu)基體組織。藉伸線加工之剖面減少率及調質熱處理，細微再結晶組織之粒界大小予以決定。而且，也可使經予連續伸線過的銅合金細線在被施加一定張力之狀態下，進行伸線去除應變熱處理。
連續伸線宜為相對於連續伸線前之線徑，經予90%以上冷間加工者。因為在接合線中形成伸線組織。99以上冷間加工者則較宜。連續伸線加工宜為模具伸線，鑽石 模具則較宜。藉此，可生成經予同心配置且細長的細微再結晶組織。
在第二次接合中，最好使用經予貴金屬電鍍過的導線架。
貴金屬電鍍宜為金(Au)電鍍、銀(Ag)電鍍之軟質電鍍，或者，自表層為金(Au)/鈀(Pd)/鎳(Ni)之三層電鍍。較具體而言，以努普硬度測量電鍍硬度，可近似接合線之維氏硬度。
在本發明中，銅銠合金細線也可以被覆0.5nm~40nm之貴金屬層。因為其與為氧化防止而在先前高純度銅(Cu)接合線上被覆有鈀(Pd)等貴金屬者，具有相同效果。0.5nm~40nm之貴金屬層(由縮小直徑而得的換算值)，宜為白金(Pt)或鈀(Pd)層係被電磁濺鍍者。此等貴金屬層較薄，所以，不會阻礙銅銠合金細線之接合特性。
本發明之接合線係在銅(Cu)-銠(Rh)基體中，固定有做為非金屬元素之硫(S)與氧(O)，所以，在第一次接合時之熔融球變形時，硫(S)不表面偏析，所以，動態強度不變高，塑性變形時之自接合線施加在晶片上的單位負載不增大，可防止鋁飛濺及斜靠。又，本發明之銅銠合金細線可很靈巧地利用接合線之韌性，以描繪接合回環，第二次接合性也很好。
又，本發明之接合線係銠(Rh)比銅(Cu)不易氧化，均勻地固溶在銅(Cu)基體中，所以，可固定氧(O)在銅(Cu)基體中，在熔融球形成時，不會因為氧(O)而得的表面氧化而產生鋁飛濺或晶片龜裂。
表1所示的成分組成之實施例1~30，係熔融在含有既定量的銠(Rh)且剩餘部分係純度99.995質量%以上 之銅(Cu)中，固溶既定量的硫(S)及氧(O)，有時固溶定量的磷(P)之合金，連續鑄造直徑10mm之各銅銠合金素線。
比較例1~6係採用在純度99.999質量%之高純度銅(Cu)不添加銠(Rh)，且含有氧(O)375質量ppm之接合線，此外，改變銅(Cu)之純度，及銠(Rh)、硫(S)、氧(O)及磷(P)之添加量，甚至在接合線上被覆鈀(Pd)600nm者，與上述實施例同法製成素線。
連續鑄造此等線材後，不中間退火，以冷間實施連續伸線加工，各製成直徑20μm之接合線。而且，調質溫度係實施例與比較例在500℃進行1秒鐘，做為先前例而不含銠之比較例1及2在550℃進行1秒鐘。被覆層係使在直徑10mm素線上實施過濕式電鍍者，以伸線加工後的縮徑比例換算厚度。
在測量調質熱處理後之接合線之維氏硬度時，使用維氏硬度計(AKASI公司製之型號MVK-G3)。而且，此等維氏硬度之數值，使用拉伸率4%時之接合線硬度。
(熱壓著並用超音波接合條件)
銅合金細線的線徑係20μm，回環長度係7mm，回環高度係200μm。使用K&S公司製MAGUZAMU PLUS型全自動接合機，接合銅合金細線至晶片(厚度0.5mm)上的電鍍0.8μm厚度之鋁(Al)-0.5質量%銅(Cu)合金膜上。接合條件係在120kHz之頻率，關於FAB製作條件、負載及超音波條件，係第一次接合為FAB直徑係接合線直徑之1.8倍，壓著球直徑係接合線直徑之2.5倍，任意調整使得第二次接合可獲得良好接合，全部樣品100個係在同一條件下，實施第一次接合及第二次接合。
毛細管使用配合接合線尺寸之SPT公司製品。
接著，對此予以接合的銅銠合金細線，進行鋁飛濺實驗、斜靠實驗及第二次接合性實驗。
(鋁飛濺實驗)
使接合後的樣品自正上方使用光學顯微鏡(奧林帕司製測量顯微鏡，STM6)，以20倍之倍率觀察接合處周邊之鋁焊墊是否熱變形而捲縮。此鋁飛濺實驗係成為以FAB製作壓著熔融球時的FAB硬度之指標。實施例及比較例之接合線各觀察100處，只要發生一個鋁飛濺則標記X，一個也沒發生則標記○。而且，實施例及比較例皆未觀察到晶片龜裂。
(斜靠實驗)
自連結第一接合與第二接合之接合處的直線之延長上，以光學顯微鏡(奧林帕司製測量顯微鏡，STM6)觀察100支接合線之回環頂點的傾斜，求出其標準差(σ)。標準差(σ)只偏移5μm以下者則判定斜靠優◎，標準差(σ)偏移超過5μm~10μm者判定斜靠良○，標準差(σ)偏移超過10μm者判定斜靠不良X。
(第二次接合性實驗)
在銅(Cu)板上電鍍鎳(Ni)10μm，在其上電鍍鈀(Pd)1μm，在其上本身觸媒電鍍金(Au)0.5μm，其當作導線基板。使此導線基板一邊在175℃加熱，一邊進行銅合金細線之楔接合及接合線之拉引測試。結果，藉第二次接合有無剝離，調查第二次接合之接合性。在此，◎標記稱做機械強度係7.0gf以上者，○標記稱做機械強度係6.5~7.0gf者，△標記稱做機械強度係6.0~6.5gf者，X標記稱做機械強度係6.0gf以下者。
以上之實施例及比較例之接合線組成與被覆層之有無及維氏硬度、對於此等之各實驗結果係表示於表1。
而且，氧(O)濃度係藉燃燒法(LECO製氧．氮分析裝置TC-436AR)測量。
【表1】
比較例3係銠(Rh)超過上限值。因此，比較例3係硫(S)及氧(O)濃度即使係在本發明範圍內之數值，因為其影響而接合線變得太硬，鋁飛濺不佳。另外，比較例4係銠(Rh)濃度未滿下限值。因此，比較例4無法抑制過剩之硫(S)之影響，鋁飛濺及第二次接合性不佳。
在比較例4中，銠(Rh)濃度較低，與硫(S)相比較下，其動態強度也變得太高，而產生鋁飛濺。另外，比較例5係硫(S)及氧(O)皆未滿下限值。因此，比較例5即使銠(Rh)係本發明範圍內之數值，硫(S)及氧(O)濃度較低，欠缺此等之平衡，所以，接合線變得太軟，產生斜靠。
比較例6係氧(O)濃度較高，其大幅超過本發明範圍之上限值。因此，比較例6係靜態強度及動態強度皆變得太高，產生鋁飛濺，同時施加不良影響在第二次接合性。
而且，比較例3與6係原料銅(Cu)之純度皆偏離本發明範圍，不純物濃度較高。因此，因為含有的不純物 之影響而球體之硬度及靜態強度變高，而比較例3與6之接合線變得很容易產生鋁飛濺。
比較例1與2皆係不含有本發明之銠(Rh)之先前例，但是，比較例1係氧(O)濃度較高，因此，在第一次接合中，熔融球壓著時之動態強度變高，而產生鋁飛濺，又，接合線之韌性降低，同時接合線表面之氧阻礙，而斜靠性及第二次接合性較差。比較例2係設置鈀(Pd)被覆層，同時抑制氧濃度，藉此，改善此等性質，但是，第二次接合性有些許不良。
相對於以上之比較例而言，在本發明之組成範圍之實施例中，鋁飛濺、斜靠及第二次接合性皆在實驗中獲得良好的結果。
銠(Rh)含量範圍之中心附近雖然成為良好結果，但是，如實施例No.7、8、21及22所見，在銠(Rh)含量係0.3~1.3%範圍下，此等平衡很好者皆很優良，尤其，0.4~0.8質量%範圍很優良。
又，本發明如實施例21及22所示，使銠(Rh)、硫(S)及氧(O)之濃度在這些一定範圍，而且，微量添加磷(P)，藉此，提高斜靠性，而且，藉設置由貴金屬而得的被覆層，可提高接合性。實施例29及30係藉形成鈀(Pd)被覆層，提高第二次接合性，其中，可提高做為接合線的芯材之性質，而且，可發揮由此等被覆層而得的效果。
[產業上之利用可能性]
本發明藉添加抑制銅(Cu)大氣氧化之銠(Rh)，維持銅(Cu)接合線之傳導性，提高第一次與第二次接合性及斜靠性，對於謀求電氣性性質很優良的銅(Cu)接合線適用於半導體裝置之訊號用連接線上非常有用。

Claims (7)

  1. 一種半導體裝置連接用銅銠合金細線，係由銠(Rh)及剩餘部分為99.995質量%以上之銅(Cu)所構成，其特徵在於：在該高純度銅(Cu)基體中，固溶有做為金屬元素之銠(Rh)0.1~1.5質量%、做為非金屬元素之硫(S)1.0~10質量ppm及氧(O)10~150質量ppm。
  2. 一種半導體裝置連接用銅銠合金細線，係由銠(Rh)及剩餘部分為99.995質量%以上之銅(Cu)所構成，其特徵在於：在該高純度銅(Cu)基體中，固溶有做為金屬元素之銠(Rh)0.1~1.5質量%、做為非金屬元素之硫(S)1.0~10質量ppm、氧(O)10~150質量ppm及磷(P)1~10質量ppm。
  3. 依申請專利範圍第1項或第2項所述之半導體裝置連接用銅銠合金細線，其中，前述銅合金細線之剩餘部分銅(Cu)之純度係99.998質量%以上。
  4. 依申請專利範圍第1項或第2項所述之半導體裝置連接用銅銠合金細線，其中，前述銅合金細線之維氏硬度係75~100Hv。
  5. 依申請專利範圍第1項或第2項所述之半導體裝置連接用銅銠合金細線，其中，前述氧(O)之含量比前述硫(S)之含量還要多。
  6. 依申請專利範圍第1項或第2項所述之半導體裝置連接用銅銠合金細線，其中，前述半導體裝置之連接電極，係經予貴金屬電鍍過得焊墊。
  7. 依申請專利範圍第1項或第2項所述之半導體裝置連接用銅銠合金細線，其中，前述半導體裝置之連接電極，係經予金(Au)、銀(Ag)或鈀(Pd)電鍍過的焊墊。
TW102116582A 2012-10-03 2013-05-09 半導體裝置連接用銅銠合金細線 TWI479581B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012221738A JP5213146B1 (ja) 2012-10-03 2012-10-03 半導体装置接続用銅ロジウム合金細線

Publications (2)

Publication Number Publication Date
TW201415566A TW201415566A (zh) 2014-04-16
TWI479581B true TWI479581B (zh) 2015-04-01

Family

ID=48778646

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102116582A TWI479581B (zh) 2012-10-03 2013-05-09 半導體裝置連接用銅銠合金細線

Country Status (4)

Country Link
JP (1) JP5213146B1 (zh)
CN (1) CN103715111B (zh)
SG (1) SG2013038336A (zh)
TW (1) TWI479581B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016170904A1 (ja) * 2015-04-22 2016-10-27 日立金属株式会社 金属粒子およびその製造方法、被覆金属粒子、金属粉体
CN104988348A (zh) * 2015-05-27 2015-10-21 安徽捷澳电子有限公司 一种超极细铂铑扁丝带及其制备方法
EP3131113B1 (en) * 2015-06-15 2023-11-29 Nippon Micrometal Corporation Bonding wire for semiconductor device
JP5893230B1 (ja) 2015-07-23 2016-03-23 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
WO2017221434A1 (ja) * 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
JP6710141B2 (ja) * 2016-10-14 2020-06-17 田中電子工業株式会社 ボールボンディング用銅合金線
JP6452661B2 (ja) * 2016-11-11 2019-01-16 日鉄マイクロメタル株式会社 半導体装置用ボンディングワイヤ
KR20190120420A (ko) 2017-12-28 2019-10-23 닛데쓰마이크로메탈가부시키가이샤 반도체 장치용 본딩 와이어
JP6869920B2 (ja) * 2018-04-02 2021-05-12 田中電子工業株式会社 ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法
CN218585983U (zh) * 2022-07-28 2023-03-07 日月光半导体制造股份有限公司 半导体封装装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050028907A1 (en) * 2002-03-12 2005-02-10 The Furukawa Electric Co., Ltd. High-strength, high-conductivity copper alloy wire excellent in resistance to stress relaxation
JP2008085320A (ja) * 2006-08-31 2008-04-10 Nippon Steel Materials Co Ltd 半導体装置用銅合金ボンディングワイヤ
US20100052171A1 (en) * 2006-11-28 2010-03-04 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd) Cu wire in semiconductor device and production method thereof
JP2011222882A (ja) * 2010-04-14 2011-11-04 Tatsuta Electric Wire & Cable Co Ltd ボンディングワイヤ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6515373B2 (en) * 2000-12-28 2003-02-04 Infineon Technologies Ag Cu-pad/bonded/Cu-wire with self-passivating Cu-alloys
US7198983B2 (en) * 2004-03-08 2007-04-03 Hitachi Metals, Ltd. Solder ball excellent in micro-adhesion preventing properties and wetting properties and method for preventing the micro-adhesion of solder balls
DE102005028951B4 (de) * 2005-06-22 2018-05-30 Infineon Technologies Ag Anordnung zur elektrischen Verbindung einer Halbleiter-Schaltungsanordnung mit einer äusseren Kontakteinrichtung
JP4482605B1 (ja) * 2009-01-23 2010-06-16 田中電子工業株式会社 高純度Ｃｕボンディングワイヤ
CN101882562B (zh) * 2009-05-08 2012-02-22 日月光封装测试(上海)有限公司 半导体封装用导线接合装置及其方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050028907A1 (en) * 2002-03-12 2005-02-10 The Furukawa Electric Co., Ltd. High-strength, high-conductivity copper alloy wire excellent in resistance to stress relaxation
JP2008085320A (ja) * 2006-08-31 2008-04-10 Nippon Steel Materials Co Ltd 半導体装置用銅合金ボンディングワイヤ
US20100052171A1 (en) * 2006-11-28 2010-03-04 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd) Cu wire in semiconductor device and production method thereof
JP2011222882A (ja) * 2010-04-14 2011-11-04 Tatsuta Electric Wire & Cable Co Ltd ボンディングワイヤ

Also Published As

Publication number Publication date
JP2014075458A (ja) 2014-04-24
TW201415566A (zh) 2014-04-16
SG2013038336A (en) 2014-05-29
CN103715111A (zh) 2014-04-09
JP5213146B1 (ja) 2013-06-19
CN103715111B (zh) 2016-05-25

Similar Documents

Publication Publication Date Title
TWI479581B (zh) 半導體裝置連接用銅銠合金細線
TWI437650B (zh) 半導體裝置連接用銅鉑合金細線
TWI395823B (zh) 包鈀（Ｐｄ）銅球銲接合線
EP2461358B1 (en) Bonding wire for semiconductor
JP5668087B2 (ja) 半導体装置接合用銅希薄ニッケル合金ワイヤの構造
TWI508204B (zh) High-speed signal line with bonding wire
EP3236490A1 (en) Bonding wire for semiconductor device
JP6710141B2 (ja) ボールボンディング用銅合金線
EP0101299B1 (en) Corrosion resistant aluminum electronic material
JP2014055327A (ja) 銀金パラジウム系合金バンプワイヤ
JP2008127606A (ja) 酸化膜密着性に優れた高強度銅合金板
JP2004014884A (ja) ボンディングワイヤー
JP2013233577A (ja) ＰｂフリーＩｎ系はんだ合金
JPH1112714A (ja) ダイレクトボンディング性及びはんだ付け性に優れた銅および銅基合金とその製造方法
TWI510652B (zh) Construction of thin copper alloy wire for copper alloy for joining semiconductor device
JP6230087B2 (ja) ベアボンディング性に優れたリードフレーム用銅合金
JP7168780B2 (ja) 電子部品の接触面を電気的に接続するプロセス
JP4345075B2 (ja) ワイアーボンディング性およびダイボンディング性に優れた銅及び銅基合金とその製造方法
JP2017136628A (ja) Ｉｎ系クラッド材
TW201638967A (zh) 接合線以及打線接合方法
JP6369994B2 (ja) ボールボンディング用銅合金細線
JP6898705B2 (ja) ボールボンディング用銅合金細線
JP2012204805A (ja) ボンディングワイヤ
JP6021284B2 (ja) 温度ヒューズ用電極材料およびその製造方法
JPH01135057A (ja) リードフレーム材料の製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees