JP6898705B2 - ボールボンディング用銅合金細線 - Google Patents
ボールボンディング用銅合金細線 Download PDFInfo
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- JP6898705B2 JP6898705B2 JP2015173061A JP2015173061A JP6898705B2 JP 6898705 B2 JP6898705 B2 JP 6898705B2 JP 2015173061 A JP2015173061 A JP 2015173061A JP 2015173061 A JP2015173061 A JP 2015173061A JP 6898705 B2 JP6898705 B2 JP 6898705B2
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- wire
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- copper
- gold
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- 229910000881 Cu alloy Inorganic materials 0.000 title claims description 66
- 239000010931 gold Substances 0.000 claims description 115
- 239000010949 copper Substances 0.000 claims description 86
- 229910052737 gold Inorganic materials 0.000 claims description 60
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 58
- 229910052802 copper Inorganic materials 0.000 claims description 56
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 53
- 229910052698 phosphorus Inorganic materials 0.000 claims description 52
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 50
- 239000011574 phosphorus Substances 0.000 claims description 50
- 229910052709 silver Inorganic materials 0.000 claims description 24
- 239000010953 base metal Substances 0.000 claims description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 22
- 239000004332 silver Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 19
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 61
- 239000010410 layer Substances 0.000 description 31
- 229910052763 palladium Inorganic materials 0.000 description 23
- 239000010944 silver (metal) Substances 0.000 description 21
- 229910052760 oxygen Inorganic materials 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 239000011162 core material Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 238000005452 bending Methods 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000011593 sulfur Substances 0.000 description 8
- 229910052717 sulfur Inorganic materials 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 238000005304 joining Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005491 wire drawing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 235000014676 Phragmites communis Nutrition 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RIRXDDRGHVUXNJ-UHFFFAOYSA-N [Cu].[P] Chemical compound [Cu].[P] RIRXDDRGHVUXNJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 229940085991 phosphate ion Drugs 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000003887 surface segregation Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0227—Rods, wires
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- Mechanical Engineering (AREA)
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Description
図示によって説明すると、キャピラリによるウェッジ接合では、図1に示すように、ボンディングワイヤ(1)がリード(3)にウェッジ接合される。この際、ウェッジ接合されたボンディングワイヤ(1)の端部はキャピラリ(2)の先端部によって押し潰され、図2に示すように、接合箇所のワイヤの面積が最も小さくなる。さらに、その後ボンディングワイヤ(1)が切り離される。これは、キャピラリ(2)の上部にあるワイヤクランパ(4)によってボンディングワイヤ(1)を掴んで上方に引き上げると、図3に示すように、残ボンディングワイヤ(1)の先端部分でワイヤが簡単に切れるようになっている。
テールワイヤの折曲り試験は、以下のようにして行った。すなわち、ワイヤボンダー(新川社製 UTC−3000)を用い、25℃の周囲温度の銀(Ag)めっき銅(Cu)板に超音波出力100mA、ボンド荷重90gfの条件で100本ウェッジ接合をした。そして、このウェッジ接合の終了後、図1に示すように、キャピラリ(2)を上昇させてキャピラリ(2)の先端にボンディングワイヤ(1)を繰り出し、その後ワイヤクランパ(4)を閉にした後、キャピラリ(2)とワイヤクランパ(4)とを一緒に上昇させることにより、キャピラリ(2)の先端に所定の長さのボンディングワイヤ(1)を延出させた状態でワイヤを切断した。これを千回行い、拡大投影機にてボンディングワイヤの屈曲本数を調べた。この測定結果を表1右欄に示す。なお、ヤング率も測定したが、いずれも本発明の範囲外の銅合金ワイヤよりも高い値を示した。
2 キャピラリ
3 リード
4 ワイヤクランパ
Claims (3)
- 金(Au)が100質量ppm以上3,000質量ppm以下、銀(Ag)が10質量ppm以上1,000質量ppm以下、リン(P)が5質量ppm以上200質量ppm以下、その他の卑金属元素の総量が100質量ppm以下および残部銅(Cu)からなり、かつ、リン(P)に対する金(Au)の質量割合が2以上100以下であることを特徴とするボールボンディング用銅合金細線。
- 金(Au)が100質量ppm以上3,000質量ppm以下、銀(Ag)が10質量ppm以上1,000質量ppm以下、リン(P)が5質量ppm以上200質量ppm以下、その他の卑金属元素の総量が100質量ppm以下および残部銅(Cu)からなり、かつ、リン(P)に対する金(Au)の質量割合が2以上100以下である銅合金であって、銅合金芯材にパラジウム(Pd)延伸層が被覆されていることを特徴とするボールボンディング用銅合金細線。
- 金(Au)が100質量ppm以上3,000質量ppm以下、銀(Ag)が10質量ppm以上1,000質量ppm以下、リン(P)が5質量ppm以上200質量ppm以下、その他の卑金属元素の総量が100質量ppm以下および残部銅(Cu)からなり、かつ、リン(P)に対する金(Au)の質量割合が2以上100以下である銅合金であって、銅合金芯材にパラジウム(Pd)延伸層および金(Au)薄延伸層が被覆されていることを特徴とするボールボンディング用銅合金細線。
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JP2015173061A JP6898705B2 (ja) | 2015-09-02 | 2015-09-02 | ボールボンディング用銅合金細線 |
TW105106448A TW201711150A (zh) | 2015-09-02 | 2016-03-03 | 球焊用銅合金細線 |
CN201610232338.9A CN106475701A (zh) | 2015-09-02 | 2016-04-14 | 球焊用铜合金细线 |
SG10201603137SA SG10201603137SA (en) | 2015-09-02 | 2016-04-20 | Copper alloy fine wire for ball bonding |
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JP2015173061A JP6898705B2 (ja) | 2015-09-02 | 2015-09-02 | ボールボンディング用銅合金細線 |
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JP6898705B2 true JP6898705B2 (ja) | 2021-07-07 |
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CN115148419B (zh) * | 2022-07-14 | 2023-03-24 | 四川威纳尔特种电子材料有限公司 | 一种高导电抗氧微合金化铜合金键合丝及其制备方法 |
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JP4705078B2 (ja) * | 2006-08-31 | 2011-06-22 | 新日鉄マテリアルズ株式会社 | 半導体装置用銅合金ボンディングワイヤ |
JP4349641B1 (ja) * | 2009-03-23 | 2009-10-21 | 田中電子工業株式会社 | ボールボンディング用被覆銅ワイヤ |
WO2011129256A1 (ja) * | 2010-04-14 | 2011-10-20 | タツタ電線株式会社 | ボンディングワイヤ |
SG190479A1 (en) * | 2011-12-01 | 2013-06-28 | Heraeus Materials Tech Gmbh | Secondary alloyed 1n copper wire for bonding in microelectronics device |
WO2013111642A1 (ja) * | 2012-01-25 | 2013-08-01 | 日鉄住金マイクロメタル株式会社 | ボンディングワイヤ及びその製造方法 |
CN104465587A (zh) * | 2014-12-04 | 2015-03-25 | 安徽华晶微电子材料科技有限公司 | 一种极微细镀镍铜合金丝及其制作方法 |
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CN106475701A (zh) | 2017-03-08 |
SG10201603137SA (en) | 2017-04-27 |
JP2017048431A (ja) | 2017-03-09 |
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