TWI545207B - A bonding wire for a semiconductor device - Google Patents

A bonding wire for a semiconductor device Download PDF

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Publication number
TWI545207B
TWI545207B TW104116125A TW104116125A TWI545207B TW I545207 B TWI545207 B TW I545207B TW 104116125 A TW104116125 A TW 104116125A TW 104116125 A TW104116125 A TW 104116125A TW I545207 B TWI545207 B TW I545207B
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TW
Taiwan
Prior art keywords
bonding
wire
bonding wire
ball
semiconductor device
Prior art date
Application number
TW104116125A
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English (en)
Other versions
TW201602364A (zh
Inventor
Tetsuya Oyamada
Tomohiro Uno
Hiroyuki Deai
Daizo Oda
Original Assignee
Nippon Steel & Sumikin Mat Co
Nippon Micrometal Corp
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Application filed by Nippon Steel & Sumikin Mat Co, Nippon Micrometal Corp filed Critical Nippon Steel & Sumikin Mat Co
Publication of TW201602364A publication Critical patent/TW201602364A/zh
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Publication of TWI545207B publication Critical patent/TWI545207B/zh

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    • H—ELECTRICITY
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C22C5/10—Alloys based on silver with cadmium as the next major constituent
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Description

半導體裝置用之接合線
本發明係關於一種用以將半導體元件上之電極與外部引線等電路配線基板之配線連接之半導體裝置用之接合線。
目前，作為將半導體元件上之電極與外部引線之間接合之半導體裝置用之接合線(以下，稱為接合線)，主要使用線徑15~50μm左右之細線。接合線之接合方法一般為超音波併用熱壓接方式，使用通用接合裝置、使接合線穿過其內部而連接之毛細管治具等。接合線之接合製程係藉由如下方式而完成：利用電弧熱輸入將導線前端加熱熔融，藉由表面張力形成球後，於在150~300℃之範圍內加熱後之半導體元件之電極上壓接接合(以下，稱為球接合)該球部，其次形成迴路後，將導線部壓接接合(以下，稱為楔接合)於外部引線側之電極。於作為接合線之接合對象之半導體元件上之電極，多數情況下使用於Si基板上成膜有以Al作為主體之合金膜之電極構造、對外部引線側之電極實施有鍍Ag、鍍Pd等之電極構造。
對接合線要求優異之球形成性、球接合性、楔接合性、迴路形成性等。作為綜合滿足該等要求性能之接合線之材料，主要使用Au。近年來，以Au價格之高漲為背景，積極進行使用相對廉價之材料作為Au之代替之接合線的開發。作為開發例，可列舉具有於Cu之表面被覆有Pd之構造之接合線。該接合線之特徵主要在於藉由抑制Cu之氧化而綜合改善接合線之性能，用於最尖端之LSI(Large Scale Integration，大型積體電路)領域中。
於今後之接合線開發中，強烈要求對伴隨半導體裝置之進一步高性能化、小型化之高密度安裝化之應對。於高密度安裝中，為抑制LSI層間之信號延遲，有使用脆弱之低介電常數材料作為層間之絕緣材料之情況，多數情況下對半導體元件之損壞成為問題。由於必須使鄰接之電極之間隔較窄，並使接合線之線徑較細，故而接合線要求較高之楔接合性。為於較細之線徑下確保電氣導電性，較理想為接合線中使用之材料之比電阻較低。作為此種高密度領域中之接合線之材料，多數情況下使用軟質且可獲得較高之楔接合性，比電阻相對較低之Au。
為解決如上所述之高密度安裝化中之問題，提供與Au相比較為廉價之接合線，嘗試於接合線之材料中使用Ag。由於Ag之楊氏模數(約83×109N/m2)與Au之楊氏模數(約80×109N/m2)大致相等，與Cu之楊氏模數(約130×109N/m2)相比較低，故而期待於對脆弱之半導體元件之球接合中損傷較少，獲得良好之楔接合性。室溫附近下之Ag之比電阻(1.6μΩ‧cm)與Cu之比電阻(1.7μΩ‧cm)或Au之比電阻(2.2μΩ‧cm)相比較低，故而就電氣特性之觀點而言，認為亦適合作為高密度安裝中之接合線之材料。
然而，使用Ag之接合線(以下，稱為Ag接合線)存在於高密度安裝中接合可靠性或迴路之穩定性較低之問題。接合可靠性評價係以評價實際之半導體裝置之使用環境中之接合部壽命為目的而進行。一般於接合可靠性評價中使用高溫放置試驗、高溫高濕試驗。Ag接合線存在與使用Au之接合線(以下，稱為Au接合線)相比，高溫高濕試驗中之球接合部之壽命較短之問題。於高密度安裝中進行小球接合，故而有助於接合之面積變小，因此更難以確保壽命。
關於迴路之穩定性，被稱為彈性不良之不良成為問題。彈性不 良成為於接合線之接合步驟中接合線彼此因迴路發生彎曲之現象而接觸從而引起短路之原因。於高密度安裝中，鄰接之接合線之間隔變窄，故而強烈要求抑制彈性不良。關於彈性不良，導線之強度越低則越容易產生，故而多數情況下於線徑變細之高密度安裝中成為問題。
作為解決該等問題之方法，揭示有於Ag中添加各種元素而進行合金化之技術，但若合金元素之濃度變高，則球變硬，於球接合時產生晶片損壞。該等問題成為妨礙Ag接合線之普及之原因。
關於以接合可靠性之改善為目的之Ag接合線之開發，例如於專利文獻1中揭示有一種接合線，其特徵在於：其包含以合計為0.1~10重量%之Pt、Pd、Cu、Ru、Os、Rh、Ir中之1種或2種以上，Pt為10重量%以下，Pd為10重量%以下，Cu為5重量%以下，Ru為1重量%以下，Os為1重量%以下，Rh為1重量%以下，Ir為1重量%以下，且剩餘部分包含Ag及不可避免雜質。
例如於專利文獻2中揭示有一種半導體元件用Ag-Au-Pd三元合金系接合線，其特徵在於：其係包含純度99.99質量%以上之Ag、純度99.999質量%以上之Au及純度99.99質量%以上之Pd之三元合金系接合線，且Au為4~10質量%，Pd為2~5質量%，氧化性非貴金屬添加元素為15~70質量ppm，且剩餘部分包含Ag，該接合線係於連續模具拉線前進行退火熱處理，於連續模具拉線後進行調質熱處理，於氮氛圍中進行球接合。
關於以迴路之穩定性提昇為目的之Ag接合線之開發，揭示有藉由加工熱處理而控制拉伸強度及0.2%耐力之技術。例如於專利文獻3中揭示有一種接合線，其特徵在於：於523K之溫度氛圍中加熱15~25秒後繼續於上述溫度氛圍中進行測定所獲得之拉伸強度高於在298K之溫度氛圍中進行測定所獲得之0.2%耐力。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開平11-288962號公報
[專利文獻2]日本專利特開2012-169374號公報
[專利文獻3]日本專利特開2002-319597號公報
然而，上述專利文獻所揭示之Ag接合線無法滿足高密度安裝中所要求之對接合可靠性、彈性不良、晶片損壞之要求性能。
高溫高濕試驗一般使用於溫度為121℃、相對濕度為100%之條件下進行之被稱為PCT(Pressure Cooker Test，壓力鍋試驗)之試驗。近年來，作為更嚴格之評價方法，多數情況下使用於溫度為130℃、相對濕度為85%之條件下進行之被稱為HAST(Highly Accelerated temperature and humidity Stress Test，高加速溫濕應力試驗)之試驗。高密度安裝用之半導體裝置被要求於假定動作環境之情形時，於HAST中經過300小時以上後亦正常地動作。Ag接合線於HAST中球接合部之壽命成為問題。藉由將Ag接合線暴露於高溫高濕環境中，於球接合部產生剝離，電性連接消失而成為半導體裝置故障之原因。又，於高密度安裝中，為應對窄間距化，多數情況下形成較通常更小之球而進行接合(以下，稱為小球接合)。接合線於使用小球接合之情形時，存在有助於接合之面積變小且接合壽命變短之傾向，故而要求更嚴格之接合可靠性。
彈性不良係多數情況下於高密度安裝領域中記憶體用途中進行之積層晶片之連接方面成為問題之不良。於藉由接合線連接積層晶片之方法中，多使用接合位置與通常之接合相反之被稱為反向接合之連接方法。於反向接合之接合製程中，於晶片上之電極形成柱形凸塊後，將球部接合於基板之電極上，最後將接合線楔接合於上述柱形凸 塊上。藉由該反向接合，可將迴路高度抑制為較低，於晶片之積層數增加而階差相當高之情形時，亦可實現穩定之迴路控制。另一方面，若進行反向接合，則容易產生彈性不良。
晶片損壞係於接合步驟中在球接合步驟中產生之不良。於高密度安裝領域中，伴隨晶片之薄化、多層化，多數情況下採用強度較低之構造，對晶片損壞抑制之要求提高。進而，於高密度安裝中進行之小球接合中，於接合時應力集中而容易產生晶片損壞，故而要求晶片損壞之嚴格抑制。
針對該等要求性能，可判明於使用先前報告之Ag接合線之情形時，於接合可靠性、彈性性能、晶片損壞性能方面存在以下之問題。關於接合可靠性，於對Al電極進行球接合並進行樹脂密封後，進行HAST，結果於經過150小時之階段球接合部之接合強度降低，無法獲得高密度安裝中所要求之300小時以上之壽命。進行接合界面之觀察，結果於Ag接合線與Al電極之界面確認到孔隙之產生。推斷其原因在於形成於接合界面之Ag與Al之金屬間化合物之一部分發生腐蝕。關於彈性性能，可判明於進行反向接合之情形時，接合線之強度不足而迴路發生彎曲，難以抑制彈性不良。關於晶片損壞性能，可知於進行小球接合之情形時，晶片產生龜裂而不適於實用。
於本發明中，其目的在於提供一種可解決先前技術之問題而滿足高密度安裝中所要求之接合可靠性、彈性性能、晶片損壞性能之接合線。
本發明之半導體裝置用之接合線之特徵在於：其包含以總計為0.05~5at.%之In、Ga、Cd中之1種以上，且剩餘部分包含Ag及不可避免雜質。
根據本發明，可滿足高密度安裝中所要求之接合可靠性、彈性性能、晶片損壞性能。
本實施形態之接合線包含以總計為0.05~5at.%之In、Ga、Cd中之1種以上，且剩餘部分設為Ag及不可避免雜質，藉此可改善高密度安裝所要求之接合可靠性，抑制彈性不良。
說明本實施形態之接合線對接合可靠性之改善之有效性。於使用導線線徑為15~25μm之導線之情形時，於通常之接合中，形成相對於導線線徑而球徑為1.7~2.0倍之球而進行接合。於高密度安裝用途中，為應對窄間距化，多數情況下形成相對於導線線徑而球徑為1.5~1.6倍之較通常更小之球而進行接合。於使用先前之Ag接合線進行小球接合，以溫度為130℃、相對濕度為85%之條件進行高溫高濕試驗之情形時，球接合部壽命未達150小時。於使用本實施形態之接合線之情形時，可獲得300小時以上之優異之球接合部壽命。根據該結果，本實施形態之接合線滿足高密度安裝中所要求之基準，可用於高密度安裝中。關於對使用脆弱之低介電常數材料之半導體元件進行球接合時之接合條件，為緩和半導體元件之損傷，必須使超音波弱於通常之條件。於使用此種接合條件之情形時，先前之Ag接合線難以獲得充分之接合面積，球接合部壽命未達100小時。另一方面，於使用本實施形態之接合線之情形時，確認到可獲得300小時以上之球接合部壽命，可實現優異之接合可靠性。認為其原因在於，本實施形態之接合線中所包含之In、Ga、Cd於球接合部之接合界面抑制成為腐蝕之原因之Ag與Al之金屬間化合物之成長。
其次，說明本實施形態之接合線對抑制彈性不良之有效性。對 具有積層有複數個半導體元件之構造之裝置使用導線線徑為15~25μm之導線實施反向接合，結果先前之Ag接合線產生彈性不良。相對於此，本實施形態之接合線可抑制彈性不良。本實施形態之接合線於最尖端之高密度封裝中亦可確認到彈性不良之抑制效果。認為彈性性能之改善效果得益於接合線之降伏強度提昇。
根據以上可知，本實施形態之接合線可同時滿足高密度安裝中所要求之性能及低成本化，可代替Au接合線。
包含以總計超過5at.%之In、Ga、Cd中之1種以上之接合線會產生接合線之斷裂伸長率降低，於楔接合時接合線斷開之不良，故而不適於實用。即，為改善接合可靠性且抑制彈性不良並且滿足作為接合線之綜合性能，有效的是接合線中所包含之In、Ga、Cd中之1種以上之總計為0.05at.%~5at.%。關於接合線，若上述濃度為0.1~2at.%，則於HAST中可達成500小時之壽命，故而較佳。其原因在於，藉由將球之硬度控制於適當之範圍內，可均勻地形成球接合界面之金屬間化合物，緩和因成為接合壽命降低之原因之凹凸所引起之應力集中。進而，關於接合線，若上述濃度為0.5~1at.%，則於HAST中可達成1000小時之壽命，故而更佳。其原因在於，藉由將導線部分之硬度控制於適當之範圍內，楔接合時之被稱為尾端之形狀穩定，可降低形成球時之形狀或大小之不均，可抑制接合可靠性之不均。
可於接合線中所包含之元素之濃度分析中利用ICP(inductive coupling plasma，感應耦合電漿)發射光譜分析裝置等。於在接合線之表面吸附有氧或碳等元素之情形時，可於進行分析之前藉由濺鍍等削去距表面2nm之區域後進行濃度測定。作為其他方法，使用酸洗之方法亦較為有效。下述Ni、Cu、Rh、Pd、Pt、Au或Be、B、P、Ca、Y、La、Ce之濃度分析亦可使用相同之方法。
具有上述特徵之接合線藉由進而包含以總計為0.01~5at.%之 Ni、Cu、Rh、Pd、Pt、Au中之1種以上，可改善接合線之使用壽命。
接合線包含In、Ga、Cd且進而複合添加與該等元素鍵結力較強之元素時對經時劣化較為有效。
先前之接合線存在隨著時間之經過而硫原子吸附於表面，球形成性等性能降低之情況。為抑制接合線表面之硫原子之吸附，有效的是降低接合線表面之活性之方法。例如，只要將接合線表面之Ag原子以與硫之吸附能力低於Ag之元素進行置換即可。認為由於接合線之表面存在In、Ga、Cd，故而藉由添加與該等元素鍵結力較強之元素，可更有效率地提昇耐硫化性。
本發明者等人進行努力研究，結果發現藉由本實施形態之接合線包含以總計為0.01~5at.%以上之Ni、Cu、Rh、Pd、Pt、Au中之1種以上，可提昇耐硫化性，改善接合線之使用壽命。於上述濃度未達0.01at.%之情形時，無法期待上述效果。於上述濃度超過5at.%之情形時，因對導線表面之電弧放電所引起之熱輸入變得不穩定，無法獲得真球性較高之球，故而不適於實用。較佳為若上述濃度為0.5~3at.%，則可獲得更高之效果。其原因在於可進一步抑制因電弧放電所引起之熱輸入之不均。
本實施形態之接合線進而包含以總計為10~300at.ppm之Be、B、P、Ca、Y、La、Ce中之1種以上，藉此可改善球接合時之壓扁形狀。
先前之Ag接合線係於球接合時球優先地於超音波之施加方向發生變形，故而有與鄰接之電極接觸而引起短路之情況。因此，必須降低球接合中球變形之各向異性，控制為接近真圓之壓扁形狀。球變形之各向異性存在結晶粒徑越大則越增加之傾向，故而有效的是使球部之晶粒微細化之技術。
本發明者等人進行努力研究，結果發現藉由本實施形態之接合 線包含以總計為10~300at.ppm之Be、B、P、Ca、Y、La、Ce中之1種以上，球晶粒可微細化，可改善球接合時之壓扁形狀。於上述濃度未達10at.ppm之情形時，無法期待上述效果。於上述濃度超過300at.ppm之情形時，接合線之斷裂伸長率降低，於楔接合時導線斷開，故而不適於實用。較佳為若上述濃度為20~200at.ppm，則可獲得更高之效果。其原因在於，若為該濃度範圍則可減少球中之元素之不均，元素更均勻地分佈。
本實施形態之接合線係接合線表面部之In、Ga、Cd之總計at.%濃度為接合線內部之上述總計at.%濃度之2倍以上，藉此可改善楔接合性。
自接合線表面起深度方向之濃度分析可使用歐傑電子光譜分析裝置。首先，一面自接合線之表面藉由濺鍍等進行削去一面進行濃度測定，獲取深度方向之濃度分佈。獲取濃度分佈之對象之元素設為Ag、In、Ga、Cd、O。自導線表面起沿深度方向分為0~10nm之區域、20~30nm之區域，求出各區域之平均濃度，藉此決定各區域中之各元素之濃度。
於楔接合中，使接合線變形而確保接合面積，故而接合線之表面部越是軟質則越容易確保接合面積，可獲得越高之接合強度。因此，有效的是相對於接合線之內部，於接合線之表面部使較Ag更軟質之元素濃化之技術。將接合線之內部定義為自導線表面起沿深度方向20~30nm之區域，將接合線之表面部定義為自導線表面起沿深度方向0~10nm之區域。
本發明者等人進行努力研究，結果發現藉由接合線表面部之In、Ga、Cd之總計at.%為接合線內部之上述總計at.%之2倍以上，於楔接合部可獲得較高之接合強度。即，接合線係於若將自導線表面起沿深度方向0~10nm之區域中之選自In、Ga、Cd中之至少1種以上之元素 相對於金屬元素之總計的平均濃度設為X0-10nm，將20~30nm之區域中之該平均濃度設為X20-30nm，則X0-10nm/X20-30nm≧2成立之情形時，於楔接合部可獲得較高之接合強度。於為X0-10nm/X20-30nm<2之情形時，無法期待上述效果。
本實施形態之接合線係與線軸垂直之方向之剖面中之平均晶粒為0.2~3.5μm，藉此可改善導線之抽出性。此處，線軸係指穿過接合線之中心，與長度方向平行之軸。
使導線剖面露出之方法例如可利用機械研磨、離子蝕刻法等。求出平均結晶粒徑之方法例如可使用背向散射電子繞射法(EBSD：Electron Backscattered Diffraction)。EBSD法可藉由求出相鄰之測定點之間之結晶方位差而判定晶界。晶界係將方位差為15度以上者定義為大傾角晶界，將由大傾角晶界所包圍之區域設為1個晶粒。結晶粒徑係設為藉由專用之分析軟體算出面積，將其面積假設為圓時之直徑。
於將接合線接合時，將接合線自捲繞至被稱為線軸之圓柱狀之治具之狀態逐次抽出少量而使用。於進行抽出時，對接合線沿與線軸平行之方向施加張力，故而有接合線發生變形而線徑變細之虞。為防止此種現象，必須控制相對於沿與線軸垂直之方向發揮作用之剪切應力之強度。作為控制相對於剪切應力之強度之方法，有效的是減小與線軸垂直之方向之剖面中之結晶粒徑。
本發明者等人進行努力研究，結果發現藉由與接合線之線軸垂直之方向之剖面中的平均晶粒為0.2~3.5μm，可獲得較高之抽出性能。進而較佳為若上述平均粒徑為0.4~3.0μm，則可獲得更高之效果。若上述平均結晶粒徑超過3.5μm，則導線藉由拉伸應力而局部變形，故而無法獲得上述效果。若上述平均結晶粒徑未達0.2μm，則接合線硬質化為所需以上，故而與毛細管之接觸部中之磨耗變得嚴重， 因此不適於實用。
本實施形態之接合線係於測定接合線之剖面之結晶方位時的測定結果中，相對於上述接合線之長度方向角度差為15度以下之結晶方位<100>之存在比率以面積率計為30%以上且100%以下，藉此可進一步改善楔接合性。
關於楔接合性，藉由於接合線之剖面，增加相對於接合線之長度方向之角度差為15度以下之結晶方位<100>的存在比率，可促進接合部之變形，可獲得較高之接合強度。為獲得上述效果，有效的是具有相對於導線之長度方向之角度差為15度以下之結晶方位<100>之區域的面積相對於結晶方位之測定區域之總面積占30%以上。若上述存在比率未達30%，則接合部之變形不充分，於楔接合部無法獲得較高之接合強度。
作為使接合線之剖面露出之方法，可利用機械研磨、離子蝕刻法等。接合線之剖面之結晶方位可使用EBSD法而決定。相對於接合線之長度方向之角度差為15度以下之結晶方位<100>的存在比率可藉由算出相對於使用EBSD等之結晶方位之測定區域之面積，具有上述結晶方位<100>之區域所占之面積之比率而求出。上述測定區域係與包含線軸之線軸平行之剖面，且將導線之長度方向設為100μm以下，將短邊方向設為導線整體(與導線直徑大致相同之長度)。
本發明者等人進行努力研究，結果發現將自本實施形態之接合線之最表面起沿深度方向為0~1nm之區域中之選自In、Ga、Cd中之至少1種以上之元素相對於金屬元素之總計的平均總計at.%控制為自接合線之最表面起沿深度方向為1~10nm之區域中之該平均總計at.%之1.2倍以上，藉此可改善毛細管之使用壽命。
毛細管及接合線存在毛細管之內部會因抽出導線時之摩擦而磨耗之問題。針對上述問題，控制接合線之最表面之組成，降低接合線 之最表面之強度，藉此可降低毛細管與接合線之間之摩擦力，可改善毛細管之使用壽命。即，接合線係於若將自導線表面起沿深度方向0~1nm之區域中之選自In、Ga、Cd中之至少1種以上之元素相對於金屬元素之總計的平均濃度設為X0-1nm，將1~10nm之區域中之該平均濃度設為X1-10nm，則X0-1nm/X1-10nm≧1.2成立之情形時，可獲得優異之毛細管之使用壽命。於為X0-1nm/X1-10nm<1.2之情形時，無法期待上述效果。
[實施例]
以下，對實施例具體地進行說明。成為原材料之Ag使用純度為99.9at.%以上且剩餘部分包含不可避免雜質者。In、Ga、Cd、Ni、Cu、Rh、Pd、Pt、Au、Be、B、P、Ca、Y、La、Ce使用純度為99.9at.%以上且剩餘部分包含不可避免雜質者。
接合線中使用之Ag合金係藉由於加工為直徑為3~6mm之圓柱型之碳坩堝中裝填原料，使用高頻爐，於真空中或N2、Ar氣體等惰性氛圍中加熱至1080~1600℃使之熔解後，進行爐內冷卻或空氣冷卻而製造。
對所獲得之Ag合金進行引伸加工而加工至0.9~1.2mm後，使用模具連續地進行拉線加工等，藉此製作300~600μm之導線。此時，於導線表面吸附有氧或硫之情形時，可進行使用鹽酸等之酸洗處理。之後，藉由反覆進行200~500℃之中間熱處理及拉線加工而加工至最終線徑之15~25μm。於拉線時使用市售之潤滑液，拉線時之導線進給速度設為20~300m/分鐘。中間熱處理一面連續地掃描導線，一面於Ar氣體氛圍中進行。中間熱處理時之導線之進給速度設為20~200m/分鐘。此處，藉由將200~500℃之中間熱處理之次數進行3次以上，可相對於自導線表面起沿深度方向20~30nm之區域，將0~10nm之區域中之In、Ga、Cd中之1種以上之濃度控制為 較高。較佳為於中間熱處理溫度第1次為200~330℃、第2次為250~400℃、第3次以後為350℃~500℃之範圍內進行更有效。其得益於添加之元素藉由上述熱處理而擴散至接合線之表面之效果。又，藉由將實施中間熱處理之線徑設為50~100μm以上，可將與線軸垂直之方向之剖面中之平均結晶粒徑控制為0.2~3.5μm。其得益於可控制再結晶時之晶粒成長之效果。進而，藉由將拉線時之導線進給速度設為200~300m/分鐘，將中間熱處理之溫度設為200~300℃，可使相對於接合線之長度方向之角度差為15度以下之結晶方位<100>的存在比率增加至30%以上。再者，本技術於進行複數次中間熱處理之情形時亦有效。
拉線加工後之導線係以最終斷裂伸長率成為約9~15%之方式實施最終熱處理。最終熱處理藉由與中間熱處理相同之方法進行。最終熱處理時之導線之進給速度與中間熱處理同樣地設為20~200m/分鐘。最終熱處理溫度為200~600℃，且熱處理時間設為0.2~1.0秒。此處，藉由於最終熱處理後於350~500℃下實施追加熱處理0.2~0.5秒，可相對於自導線表面起沿深度方向1~10nm之區域，將0~1nm之區域中之In、Ga、Cd中之1種以上之濃度控制為1.2倍以上。
接合可靠性評價用之試樣係對於一般之金屬框架上之Si基板成膜有厚度1.0μm之Al膜之電極使用市售之焊線機進行球接合，藉由市售之環氧樹脂進行密封而製作。球係一面使N2+5%H2氣體以流量0.4~0.6L/min流動一面形成，球徑設為相對於導線線徑為1.5~1.6倍之範圍。高溫高濕環境中之接合可靠性係藉由使用不飽和型壓力鍋試驗機，暴露於溫度130℃、相對濕度85%之高溫高濕環境時之球接合部之接合壽命而進行判定。關於球接合部之接合壽命，每100小時實施球接合部之剪切試驗，將剪切強度之值設為成為初期所獲得之剪切強度之1/3的時間。高溫高濕試驗後之剪切試驗係藉由酸處理而去除樹 脂，使球接合部露出後進行。剪切試驗機使用DAGE公司製造之微小強度試驗機。剪切強度之值使用隨機選擇之球接合部之10處之測定值的平均值。於上述評價中，若接合壽命未達300小時則判斷為實用上存在問題且記為△記號，若為300以上且未達500小時則判斷為實用上不存在問題且記為○記號，若為500小時以上則判斷為特別優異且記為◎記號，若為1000小時以上則記為☆記號。
彈性性能評價用之試樣係藉由於形成於半導體元件上之電極之柱形凸塊上，使用市售之焊線機，進行作為進行楔接合之接合方法之反向接合而製作。接合條件設為迴路長度3.0mm、迴路高度0.13mm。藉由光學顯微鏡觀察接合之200根接合線之迴路部分，若存在鄰接之接合線接觸之部位則判定為不良。若存在5處以上之不良則判斷為實用上存在問題且記為△記號，若不良為1~4處則判斷為實用上不存在問題且記為○記號，若完全未產生不良則判斷為特別優異且記為◎記號。
晶片損壞性能之評價係藉由對於Si基板成膜有厚度1.0μm之Al膜之電極使用市售之焊線機進行球接合，藉由光學顯微鏡觀察球接合部正下方之Si基板而進行。於Si基板看到龜裂之情形時判定為不良。觀察100處，若存在1處以上之不良則判斷為實用上存在問題且記為△記號，若完全未產生不良則判斷為特別優異且記為○記號。
接合線之使用壽命之評價係對將接合線放置於大氣氛圍中一定時間後進行接合，是否可形成良好之球，或於球接合部及楔接合部是否可獲得良好之接合狀態進行評價。球形成之判定係藉由光學顯微鏡觀察100個球，若真球性較低之球或表面存在凹凸之球為5個以上則判定為不良。球之形成條件係使用N2+5%H2氣體且將氣體流量設為0.4~0.6L/min，將球之直徑設為導線線徑之1.5~1.6倍之範圍。於球接合部及楔接合部是否可獲得良好之接合狀態之判定係使用市售之焊線 機連續地進行1000次之接合而判定。藉由光學顯微鏡觀察球接合部或楔接合部，於3根以上產生剝離等不良之情形時判定為不良。於放置時間未達12個月且產生上述任一不良之情形時，判斷為實用上存在問題且記為△記號，於放置時間經過12個月後且未達18個月期間產生不良之情形時，判斷為實用上不存在問題且記為○記號，於放置時間經過18個月後且未達24個月期間產生不良之情形時，判斷為優異且記為◎記號，若放置時間經過24個月後亦完全未產生不良，則判斷為特別優異且記為☆記號。
球之壓扁形狀之評價係對於Si基板成膜有厚度1.0μm之Al膜之電極使用市售之焊線機進行球接合，自正上方藉由光學顯微鏡進行觀察。關於球之壓扁形狀之判定，若壓扁形狀接近圓形則判定為良好，若為橢圓形或花瓣狀之形狀則判定為不良。藉由光學顯微鏡觀察100處之球接合部，若存在5個以上之不良則判斷為實用上存在問題且記為△記號，若不良為1~4個則判斷為實用上不存在問題且記為○記號，若完全未產生不良則判斷為特別優異且記為◎記號。
楔接合性之評價係藉由使用經實施鍍Ag之一般之金屬框架，使用市售之焊線機進行楔接合，觀察楔接合部而進行。接合條件係使用一般使用之接合條件。藉由光學顯微鏡觀察50根楔接合部，若於接合部存在5個以上之接合線之剝離則判斷為實用上存在問題且記為△記號，若剝離為3~4個則判斷為實用上不存在問題且記為○記號，若剝離為1~2個則判斷為優異且記為◎記號，若完全未產生不良則判斷為特別優異且記為☆記號。
接合線之抽出性能之評價係藉由以一般之接合條件進行接合後，藉由掃描式顯微鏡觀察迴路部分之接合線，測定直徑，求出相對於接合前之接合線之直徑之減少率而進行。若減少率為80%以下則判定為不良。觀察30根接合線，若5根以上存在不良則判斷為實用上存 在問題且記為△記號，若不良為3~4根則判斷為實用上不存在問題且記為○記號，若不良為1~2根則判斷為優異且記為◎記號，若完全未產生不良則判斷為特別優異且記為☆記號。
毛細管之使用壽命係觀察使用前後毛細管之前端之孔，藉由毛細管之前端之孔之磨耗量進行評價。接合條件設為一般之條件，觀察對接合線進行3000次接合後之毛細管，若無磨耗則判斷為實用上不存在問題且記為○記號，觀察進行10000次接合後之毛細管，若無磨耗則判斷為優異且記為◎記號。
表1-1~表1-10示出記載本發明之接合線之組成等特徵及各接合線之各評價結果的實施例。表2-1及表2-2示出比較例。
請求項1之接合線為No.1~188，確認到可滿足高密度安裝中所要求之接合可靠性、彈性性能及晶片損壞性能。相對於此，如比較例之No.1~7所示，確認到於In、Ga、Cd之濃度為上述範圍外之情形時無法獲得充分之效果。請求項2之接合線為No.31~94、123~127、131~135、140~144、148~152、156~160、164~168、173~177、180、182，確認到可謀求接合線之使用壽命之提昇。請求項3之接合線為No.95~127、134、135、143、144、151、152、159、160、167、168、176、177，確認到可獲得優異之球壓扁形狀。請求項4之接合線為No.1~127、136~180，確認到可獲得良好之楔接合性。請求項5之接合線為No.1~135、137~168、170~188，確認到可獲得優異之導線抽出性能。請求項6之接合線為No.170~188，確認到可獲得更優異之楔接合性。請求項7之接合線為No.182~188，確認到可獲得優異之毛細管之使用壽命。

Claims (7)

  1. 一種半導體裝置用之接合線，其特徵在於：其包含以總計為0.05~5at.%之In、Ga、Cd中之1種以上，且剩餘部分包含Ag及不可避免雜質。
  2. 如請求項1之半導體裝置用之接合線，其進而包含以總計為0.01~5at.%之Ni、Cu、Rh、Pd、Pt、Au中之1種以上。
  3. 如請求項1或2之半導體裝置用之接合線，其進而包含以總計為10~300at.ppm之Be、B、P、Ca、Y、La、Ce中之1種以上。
  4. 如請求項1或2之半導體裝置用之接合線，其中自導線表面起沿深度方向0~10nm之區域中之In、Ga、Cd之總計at.%為自上述導線表面起沿深度方向20~30nm之區域中之上述總計at.%之2倍以上。
  5. 如請求項1或2之半導體裝置用之接合線，其中與線軸垂直之方向之剖面中之平均結晶粒徑為0.2~3.5μm。
  6. 如請求項1或2之半導體裝置用之接合線，其中於測定與包含上述接合線之線軸之線軸平行之剖面之結晶方位時的測定結果中，相對於上述接合線之長度方向角度差為15度以下之結晶方位<100>之存在比率以面積率計為30%以上且100%以下。
  7. 如請求項1或2之半導體裝置用之接合線，其中自導線表面起沿深度方向為0~1nm之區域中相對於金屬元素之總計的選自In、Ga、Cd中之至少1種以上之元素之平均總計at.%為自上述導線表面起沿深度方向為1~10nm之區域中之該平均總計at.%之1.2倍以上。
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PH12016500383A1 (en) 2016-05-16

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