TW201440188A - 高速信號線用接合線 - Google Patents

高速信號線用接合線 Download PDF

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Publication number
TW201440188A
TW201440188A TW103101756A TW103101756A TW201440188A TW 201440188 A TW201440188 A TW 201440188A TW 103101756 A TW103101756 A TW 103101756A TW 103101756 A TW103101756 A TW 103101756A TW 201440188 A TW201440188 A TW 201440188A
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Taiwan
Prior art keywords
bonding wire
mass
silver
speed signal
layer
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TW103101756A
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English (en)
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TWI490995B (zh
Inventor
Yuki ANTOKU
Kazuhiko Yasuhara
Jun Chiba
Wei Chen
Junichi Okazaki
Nanako Maeda
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Tanaka Electronics Ind
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Publication of TW201440188A publication Critical patent/TW201440188A/zh
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Publication of TWI490995B publication Critical patent/TWI490995B/zh

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Abstract

本發明之目的在於提供一種Ag-Pd-Pt三元合金或Ag-Pd-Pt三元系合金的高速信號線用接合線，即使在該接合線的表面形成不穩定的硫化銀層時，仍無堅固的硫化銀(Ag2S)膜，並可傳送穩定的數千兆赫頻帶等的超高頻信號。該高速信號線用接合線係由0.8~2.5質量%的鈀(Pd)、0.1~0.7質量%的鉑(Pt)、及剩餘部分為純度99.99質量%以上的銀(Ag)所構成的三元合金、或於該三元合金中添加微量元素所構成的三元系合金，其特徵為：該接合線的剖面係由表皮膜與芯材構成，該銀合金的表皮膜中存在具有高濃度銀(Ag)的表面偏析層。

Description

高速信號線用接合線
本發明係關於一種將半導體元件的焊墊電極與配線基板上的引線電極連接的高速信號線用接合線；特別是關於一種使用1~15千兆赫頻率的高速信號線用接合線。
近年來，隨著半導體裝置之製造技術的發展，將使用超過數千兆赫頻帶之超高頻的高速信號線用之半導體積體電路裝置安裝到手機等情形也逐漸增加。以往一般係使用純度99.99質量%以上的高純度金接合線於高頻傳送。但若於數千兆至數十千兆赫的頻帶中使用一般的接合線以進行使用超高頻之高速信號線的半導體元件與配線電極等的連接，則因超高頻信號會於接合線的表皮層傳遞，而導致高頻電阻因超高頻信號變得更大。因此，使用高純度金接合線，是使接收感度及傳送輸出等降低的原因。
因此，相對於比電阻值為2.4μΩcm的高純度金(Au)，已有對於比電阻值為1.6μΩcm的純度99.99%的高純度銀(Ag)等的線材所進行之研討。然而，在溶解‧鑄造後洗淨，再經連續拉線來製作接合線的過程中，用大量的高純度銀(Ag)則過於柔軟。此外，銀(Ag)在大氣中硫化亦會在接合線的表皮層形成硫化銀(Ag2S)膜。因此，純銀接合線並不直接使用於在數微米的表皮層傳遞的高頻傳送，如日本特開2003-59963號公報(下述專利文獻1)所揭示，只是對純銀接合線進行純金電鍍而將其實用化。如此，於純銀接 合線的情況中，在作為使用超高頻的高速信號線使用之前，在為了用於球焊而形成熔融焊球時，因為堅固的硫化銀(Ag2S)會使熔融焊球變硬，故無法形成穩定的熔融焊球。
另一方面，以避免使導電性高的銀(Ag)的比電阻下降至如同現在廣泛使用之純度99%的金(Au)線的3.1μΩcm以下為目的，已有開發出一種Ag-Au二元系合金的接合線，其係將10000~55000質量ppm的金(Au)添加到銀(Ag)中，再添加1~100質量ppm的鉍(Bi)所形成；此外更有開發出一種Ag-Au-Pd三元系合金的接合線，其係將20000質量ppm以下的鈀(Pd)添加到該線材中所形成(日本特開2012-49198號公報(下述專利文獻2))。此處，使鈀(Pd)的添加量為20000質量ppm以下，係因為「若添加超過20000質量ppm，則焊球的硬度變高，而在球焊時發生焊墊破損(參照同公報【0021】段落)」。
此外，亦有揭示一種球焊用接合線者，其特徵為：含有選自鈣(Ca)、銅(Cu)、釓(Gd)、釤(Sm)中兩種以上的元素共5~500重量ppm，並含有選自鈀(Pd)、金(Au)中一種以上的元素共0.5~5.0重量%，此外係由銀(Ag)及不可避免之雜質所構成(日本特開2012-151350號公報(下述專利文獻3))。然而，該接合線係藉由球焊法將作為半導體元件之被覆有Ni/Pd/Au的電極與電路配線基板的導體配線連接的接合用線材(W)，並非係將鋁(Al)合金(Al-Si-Cu等)焊墊電極接合者。因為「鋁(Al)與銀(Ag)的接合處易腐蝕」(參照同公報【0015】段落)。
【專利文獻1】日本特開2003-59963號公報
【專利文獻2】日本特開2012-49198號公報
【專利文獻3】日本特開2012-151350號公報
本發明之目的在於提供一種Ag-Pd-Pt三元合金或Ag-Pd-Pt三元系合金的高速信號線用接合線，其利用接合特性良好的Ag-Pd-Pt三元合金或Ag-Pd-Pt三元系合金之組成，並使接合線的表面重新偏析出高濃度的純銀層，藉此可於該最外層形成厚度均勻的高濃度純銀層而傳送穩定的數千兆赫頻帶等的超高頻信號。
用於解決本發明之課題的高速信號線用接合線之一者係含有微量添加元素的Ag-Pd-Pt三元系合金接合線，其用於使半導體元件的焊墊電極與配線基板上的引線電極相連接；該接合線為三元合金，該三元合金中，含有0.8~2.5質量%的鈀(Pd)、0.1~0.7質量%的鉑(Pt)，而剩餘部分係由純度99.99質量%以上的銀(Ag)所構成；該接合線的剖面係由表皮膜與芯材所構成，該表皮膜係由連續鑄造之外皮層、及表面偏析層所構成，而該表面偏析層形成於該外皮層上，係由含銀(Ag)量比芯材更多的合金所構成。
又，用於解決本發明之課題的高速信號線用接合線之一，係含有微量添加元素的Ag-Pd-Pt三元系合金接合線，其用於使半導體元件的焊墊電極與配線基板上的引線電極相連接；該接合線為三元系合金，該三元系合金包含0.8~2.5質量%的鈀(Pd)、0.1~0.7質量%的鉑(Pt)、及總量為5~300質量ppm之作為微量添加元素的銠(Rh)、釕(Ru)、銥(Ir)、銅(Cu)、鎳(Ni)、鐵(Fe)、鎂(Mg)、鋅(Zn)、鋁(Al)、錳(Mn)、銦(In)、矽(Si)、鍺(Ge)、錫(Sn)、 鈹(Be)、鉍(Bi)、硒(Se)、鈰(Ce)、鈦(Ti)、釔(Y)、鈣(Ca)、鑭(La)、銪(Eu)或銻(Sb)中至少一種以上的元素，而剩餘部分係由純度99.99質量%以上的銀(Ag)所構成；該接合線的剖面係由表皮膜與芯材所構成，該表皮膜係由連續鑄造之外皮層及表面偏析層所構成，而該表面偏析層形成於該外皮層上，係由含銀(Ag)量比芯材更多的合金所構成。
又，用於解決本發明之課題的高速信號線用Ag-Pd-Pt三元合金或Ag-Pd-Pt三元系合金接合線的較佳態樣之一，係該鈀(Pd)相對於鉑(Pt)的比例在5：1~10：1的範圍內，特別以在7：1~10：1的範圍內為佳。因為接合線的接合特性穩定。
又，用於解決本發明之課題的高速信號線用Ag-Pd-Pt三元合金或Ag-Pd-Pt三元系合金接合線的較佳態樣之一，係該高速信號為1~15千兆赫的頻率。
又，用於解決本發明之課題的高速信號線用Ag-Pd-Pt三元合金或Ag-Pd-Pt三元系合金接合線的較佳態樣之一，係該焊墊電極為純度99.9質量%以上的鋁(Al)金屬，或0.5~2.0質量%的矽(Si)或銅(Cu)及剩餘部分為純度99.9質量%以上的鋁(Al)合金。
又，用於解決本發明之課題的高速信號線用Ag-Pd-Pt三元合金或Ag-Pd-Pt三元系合金接合線的較佳態樣之一，係該焊墊電極，係由金(Au)、鈀(Pd)或鉑(Pt)的表層所構成的電極焊墊。
此外，用於解決本發明之課題之用於高速信號線的Ag-Pd-Pt三元合金或Ag-Pd-Pt三元系合金接合線，與純金接合線相同，係用鑽石模(Diamond dice)連續進行減面率(reduction in area)為99%以上的冷作拉線加 工，之後藉由調質熱處理來調整接合線的機械性特性。
(主添加元素)
本發明中，於剩餘部分使用純度99.99質量%以上的銀(Ag)，係為了使含銀(Ag)量較多的合金確實地產生表面偏析。若純度較低，則具有因為雜質而造成含銀(Ag)量較多之合金的表面偏析層厚度不均的可能性。
以往的純銀接合線中，係在大氣中的高純度銀(Ag)表面上使表面的銀(Ag)變為離子，並與大氣中的硫化氫鍵結而形成硫化物。於純銀接合線的情況中，硫化物比氧化物更穩定，故該硫化物較為不佳。該硫化物雖最初於純銀線表面形成不穩定的硫化銀層，但硫化銀層最後會在純銀接合線的表面成長為數奈米左右的堅固的硫化銀(Ag2S)膜。並且，吾人認為，存在於該表皮層之硫化物，會沿著晶粒邊界傳遞，而往純銀接合線的內部行進，進而阻礙接合特性。另外，吾人得知，若存在銀(Ag)濃度較高的銀合金之表面偏析層，則伴隨著銀合金比純銀更具耐硫化性的特性，在阻礙銀合金表面的硫化合物往內部行進的同時，亦可阻止在銀合金表面形成堅固的硫化銀(Ag2S)膜。
即使將0.8~2.5質量%範圍內的鈀(Pd)及0.1~0.7質量%範圍內的鉑(Pt)添加至銀(Ag)中，亦可一起均勻地固溶在銀(Ag)之中，而形成銀(Ag)濃度較高的銀合金之表面偏析層。
本發明中，藉由表面偏析所形成的高濃度銀(Ag)層，係利用稀釋合金(Dilute Alloy)的固相．氣相間的表面現象，故表面偏析層可於接合線的整個外圍確實地形成一定寬度的層。
另一方面，雖因為剩餘的銀(Ag)為96.8質量%以上，而使其 硫化程度低於純度99.99%的高純度銀(Ag)線，但該三元合金的芯材還是會與大氣中的硫結合而硫化。然而，吾人知道在一般的保管狀態下，於該三元合金的接合線的最外層表面上所形成的硫化銀層，並不會沿著晶粒邊界進入線材內部，而如下所述地，對於接合特性並無影響。又，高純度的銀(Ag)與高純度的鈀(Pd)產生表面偏析，又，高純度的銀(Ag)與高純度的鉑(Pt)亦產生表面偏析，而因為鈀(Pd)與鉑(Pt)的原子半徑相似，故若將鈀(Pd)與金(Au)添加到高純度的銀(Ag)中並進行溶解鑄造，則高濃度銀(Ag)層在表皮層附近形成環形狀。接合線的製造步驟中，若保持該高濃度層的狀態，以水進行冷卻等並以冷作方式進行連續拉線，則該高濃度層與細線的線徑將會等比例地縮徑。因此，於直徑8mm的連續鑄造線材縮徑至20μm的接合線的情況(減面率99.9%以上)，理論上會在接合線的表皮上殘留從表面起算數奈米以下的高濃度銀(Ag)層，而實際上在直徑20μm的線材的拉線階段，觀察到如第一圖所示的高濃度銀(Ag)層。
一般而言數千兆赫的高頻信號係在1μm左右的表層上傳遞，頻率越高則越在接近表面之處傳遞，故即使僅有微量，只要存在有高濃度銀(Ag)層，與不具有高濃度銀(Ag)層的情況相比，其信號量亦增加，並且可使信號波形穩定。
本發明中，添加0.8~2.5質量%的鈀(Pd)，係因為可藉由與鉑(Pt)的共同添加效果，得到最適合高頻信號線的接合特性的同時，亦是為了使純銀(Ag)之表面偏析容易產生。在上述鈀(Pd)的添加量的範圍內可確實地產生表面偏析。若鈀(Pd)超過2.5質量%，則接合線的比電阻增加，不適合作為高頻信號線。又，若為了顯著地增加硬度而使鈀(Pd)超過2.5質量%，則在 形成焊球(FAB；FREE AIR BALL)時，熔融焊球的晶粒變硬，而無法得到最適合高頻信號線的接合特性。反之，若鈀(Pd)未滿0.8質量%，則銀(Ag)易硫化，且無法形成充分的偏析層。因此，使鈀(Pd)的範圍為0.8~2.5質量%。
本發明中，添加0.1~0.7質量%的鉑(Pt)，係因為可藉由與鈀(Pd)的共同添加效果，得到最適合高頻信號線的接合特性的同時，亦是為了使純銀(Ag)之表面偏析容易產生。在上述鉑(Pt)的添加量的範圍內可確實地產生表面偏析。若鉑(Pt)超過0.7質量%，則接合線的比電阻增加，不適合作為高頻信號線。反之，若鉑(Pt)未滿0.1質量%，則銀(Ag)易硫化，且無法形成充分的偏析層。因此，使鉑(Pt)的範圍為0.1~0.7質量%。
又，鈀(Pd)相對於鉑(Pt)的比例在5：1~10：1的範圍內為較佳。因為若鈀(Pd)相對於鉑(Pt)的比例未滿5：1，則打線本身容易變硬而易使迴路變得難以繪製。反之，鈀(Pd)相對於鉑(Pt)的比例超過10：1，則焊球的形狀容易變得不穩定。因此，為得到穩定的接合特性，7：1~10：1範圍內為較佳。
(微量添加元素)
本發明之Ag-Pd-Pt三元系合金，其中添加總量為5~300質量ppm的銠(Rh)、釕(Ru)、銥(Ir)、銅(Cu)、鎳(Ni)、鐵(Fe)、鎂(Mg)、鋅(Zn)、鋁(Al)、錳(Mn)、銦(In)、矽(Si)、鍺(Ge)、錫(Sn)、鈹(Be)、鉍(Bi)、硒(Se)、鈰(Ce)、鈦(Ti)、釔(Y)、鈣(Ca)、鑭(La)、銪(Eu)或銻(Sb)中的至少1種元素。該等微量添加元素雖不會使Ag-Pd-Pt三元合金的表面偏析層產生變化，然而由於其對接合特性具有效果，故選擇該等微量添加元素。具體而言，其對於熔融焊球與鋁(Al)金屬或鋁(Al)合金的焊墊電極之接合性，特別是對長時間的穩 定性具有效果。又，在Ag-Pd-Pt三元合金中，於既定範圍內添加銠(Rh)、釕(Ru)、銥(Ir)、銅(Cu)、鎳(Ni)、鐵(Fe)、鎂(Mg)、鋅(Zn)、鋁(Al)、錳(Mn)、銦(In)、矽(Si)、鍺(Ge)、錫(Sn)、鈹(Be)、鉍(Bi)、硒(Se)、鈰(Ce)、鈦(Ti)、釔(Y)、鈣(Ca)、鑭(La)、銪(Eu)或銻(Sb)之元素，則焊球的形狀不會受損，並增加接合線的韌性。然而，該等元素的總量未滿5質量ppm則無法產生添加後之效果，若超過300質量ppm，則在形成焊球時，熔融焊球的晶粒變得過硬，進而引起晶片破裂。因此，使銠(Rh)、釕(Ru)、銥(Ir)、銅(Cu)、鎳(Ni)、鐵(Fe)、鎂(Mg)、鋅(Zn)、鋁(Al)、錳(Mn)、銦(In)、矽(Si)、鍺(Ge)、錫(Sn)、鈹(Be)、鉍(Bi)、硒(Se)、鈰(Ce)、鈦(Ti)、釔(Y)、鈣(Ca)、鑭(La)、銪(Eu)或銻(Sb)之中的至少1種元素，其總量在5~300質量ppm的範圍。一般的接合線大多係使用100質量ppm以下。
此外，焊墊電極，宜為金(Au)、鈀(Pd)或鉑(Pt)的表層所構成的電極焊墊。因為本發明的Ag-Pd-Pt三元合金或Ag-Pd-Pt三元系合金的接合線與焊球的接合性良好。
本發明之Ag-Pd-Pt三元合金或Ag-Pd-Pt三元系合金的接合線，可確實地產生適合高速信號傳遞的高濃度銀(Ag)層之表面偏析，且因為高濃度銀(Ag)層附著於Ag-Pd-Pt三元合金或Ag-Pd-Pt三元系合金的芯材，故相較於以往的接合線，可形成適合穩定傳送數千兆至數十千兆赫之高頻信號的富銀合金的信號層。
又，本發明之Ag-Pd-Pt三元合金或Ag-Pd-Pt三元系合金的接合線中，因為高濃度銀(Ag)層的厚度較薄，故具有與以往之優良接合線相同的機械性強 度，原則上，焊球特性及迴路特性等的接合特性，不比以往的接合線遜色，且關於熔融焊球與焊墊電極之接合性，具有比以往的接合線更優良的追加效果。特別是，於焊墊電極的表層係由金(Au)、鈀(Pd)或鉑(Pt)所構成的電極焊墊的情況下，其接合強度為穩定。
又，本發明之Ag-Pd-Pt三元合金或Ag-Pd-Pt三元系合金的接合線，對影響接合線的機械性強度的鈀(Pd)之添加量為2.5質量%以下，故形成焊球時的熔融焊球的晶粒不會變得過硬。又，本發明的Ag-Pd-Pt三元合金或Ag-Pd-Pt三元系合金的接合線，即便在使用純度99.9質量%以上的鋁(Al)金屬，或是具有0.5~2.0質量%的矽(Si)或銅(Cu)以及剩餘部分為純度99.9質量%以上的鋁(Al)合金所構成的柔軟的鋁焊墊的情況中，因含鈀(Pd)量較少，故不會因本發明接合線而產生晶片破裂及焊墊翹曲。結果，即使置於高溫的環境下，亦不會於接合界面產生位移，具有可使高頻信號穩定傳送的效果。
第一圖係顯示本發明的高濃度銀(Ag)層之分布的剖面示意圖。
第二圖係將實施品1與比較品39伴隨時間之電壓變化圖表化的圖。
第三圖係顯示對實施品1的最表面附近進行定性分析之結果。
【實施例】
具有表1所示之成分組成的Ag-Pd-Pt三元系合金中(使銀(Ag)的純度皆為99.99質量%以上)，將各5~300ppm的銠(Rh)、釕(Ru)、銥(Ir)、銅(Cu)、鎳(Ni)、鐵(Fe)、鎂(Mg)、鋅(Zn)、鋁(Al)、錳(Mn)、銦(In)、矽(Si)、 鍺(Ge)、錫(Sn)、鈹(Be)、鉍(Bi)、硒(Se)、鈰(Ce)、鈦(Ti)、釔(Y)、鈣(Ca)、鑭(La)、銪(Eu)及銻(Sb)作為微量添加元素，並與一般的純金接合線相同地進行溶解，且以8mm直徑在惰性氣體氛圍下連續鑄造。將該連續鑄造之粗線，繼續保持原狀態並以濕式的冷作方式，用鑽石模進行減面率99.99%以上的連續拉線至20μm的最終線徑，並實行既定的調質熱處理，以製造線徑為20μm的本發明之接合線(以下稱「實施品」)1~38。
實施例1~14係關於申請專利範圍第1項的實施品，實施例15~38係關於申請專利範圍第2項的實施品，實施例8~14、及27~38係關於申請專利範圍第3項的實施品。
【表1】
【比較例】
與實施例相同地，製造如表1所示之成分組成的比較品的接合線39~47(以下稱為「比較品」)，其不在本發明之組成範圍內。
此外，比較品47與實施例相同地，係將連續鑄造的直徑8mm粗線以80℃的稀硝酸進行酸洗後所得的線材進行連續拉線(縮徑)，並形成表層無表面偏析層的比較品。因此，比較品47的組成範圍雖在本發明的範圍內，但在酸洗此點與實施品不同。
此外，本發明及比較例中的調質熱處理，與純金線的情況相同，係在管狀爐中調節溫度及速度後，藉由拉伸破斷試驗機之測量而將伸度調整至既定值的熱處理，該調質熱處理中，在實施品的表面上偏析出來的環形狀高濃度銀(Ag)層並未消失。
[表面偏析層之確認]
在惰性氛圍氣體下將具有實施品1之組成的Ag-Pd-Pt三元合金連續鑄造成直徑8mm的粗線。將該粗線以水冷方式進行連續拉線，並進行調質熱處理使伸長率(elongation)變為4%，而得到直徑20μm的接合線。對於該接合線的銀(Ag)元素，從表層往中心方向，在深度方向上進行歐傑分析(auger analysis)。其結果如第一圖所示。
從第一圖明顯可知，實施品從表面至10nm附近存在高濃度的銀(Ag)表面偏析層。
[硫化銀之確認]
將實施品1的接合線在室溫的大氣中放置30天，並用硫化膜厚測量機(CERMA PRECISION公司製QC-200)，以連續電化學還原法測量最 外層的硫化銀(Ag2S)的膜厚。其結果，無檢測出硫化銀(Ag2S)膜。該結果顯示於第二圖的紅色線(L形曲線)。
將比較品39的接合線以與實施品1相同的方式放置，並測試硫化銀(Ag2S)的膜厚。其結果，檢測出硫化銀(Ag2S)膜。該結果顯示於第二圖的綠色線(階梯形曲線)。
第二圖係將電壓隨著時間之變化圖表化的圖。形成有硫化銀(Ag2S)的比較品39的情況中，產生以下現象：電壓在-0.25~-0.80V的區間中，即使在時間變化的情況下，電壓亦無變化。另一方面，實施品1的接合線，在上述電壓的區間中，並未發生上述階段狀現象，電壓係隨著時間而變化。因此可知，實施品1的接合線的最外層表面並未形成硫化銀(Ag2S)。
又，對實施品1的最外層表面進行定性分析，發現硫(S)的檢出量。該檢出量顯示於第三圖。
如第三圖所示，可知在實施品1的接合線的最外層表面存在硫(S)。然而，從第二圖的結果未檢測出硫化銀(Ag2S)可得知，實施品1的接合線的硫(S)與存在於最外層表面的銀(Ag)進行反應並未形成堅固的硫化銀(Ag2S)膜，而是物理性吸附之不穩定的硫化銀層的狀態。又，從第三圖明顯可知，實施品1的接合線的最外層表面的金屬元素中，除了銀(Ag)以外並沒有鈀(Pd)與鉑(Pt)，其實質上為高濃度的銀(Ag)層，故係最適合作為高速信號層的結構。
[鋁飛濺測試]
將該等實施品1~38及比較品39~47設置於泛用的打線接合機，在虛擬半導體IC(將測試圖案植入晶圓者，簡稱「測試元件群(TEG；Test Element Group)」)表面的70μm2的鋁焊墊(由鋁(Al)-1.0質量%Si-0.5質量%Cu合金所構成，在表面蒸鍍有20nm的金(Au)層)上，在噴附氮氣的氛圍下，以38μm為目標製作焊球(FAB)，並在下述條件下進行球焊：基材的加熱溫度：200℃；迴路長度：5mm；迴路高度：220μm；壓接焊球直徑：50μm；壓接焊球高度：10μm。鋁飛濺量的測量方法係使用泛用的電子顯微鏡(Scanning electron microscope；SEM)從正上方觀察各打線的壓接焊球，並以壓接焊球的外圍部為基點，量測鋁從壓接焊球濺出至最遠的位置。濺出的鋁量未滿2μm的情況判定為◎；超過2μm未滿4μm的情況為○；超過4μm為X。關於該鋁飛濺測試的評估結果如表2所示。
[晶片受損測試]
更進一步，觀察關於該試片的晶片受損。晶片受損測試，係以氫氧化鈉水溶液將鋁焊墊溶解後，以實體顯微鏡觀察晶片的結果。表2中的「晶片受損測試」，存在些微損傷及裂縫的情況為X；完全無損傷及裂縫的情況為○，分別顯示於表2。
【表2】
[信號波形之劣化測試]
接著，信號波形的劣化測試係用四點探針量測法來進行測量。試片係使用實施品．比較品的線材(分別為線徑20μm、長度100mm)。測量係使用泛用性函數產生器，將10GHz、2V的脈衝波形發送至實施品線材及比較品線材，並用可測試10GHz頻帶頻率之脈衝波形的既定泛用數位示波器及探針，來量測信號波形。測量用探針間隔為50mm。信號波形之劣化程度，係測量「向線材發送的輸出信號波形到達輸入電壓值為止」的延遲時間。此處，從實驗結果可確認，以往的線材(Ca15ppm、Eu20ppm及剩餘部分為99.999質量%Au)的信號延遲時間為20%。因此，信號延遲時間的判定為：延遲時間與以往的打線相比，未滿20%的情況為○；延遲大於20%的情況為X。關於信號波形之劣化測試的實施品．比較品的線材的評估結果如表2所示。
[壓接焊球之剪切強度測試]
使用與鋁飛濺測試相同的構件及評估裝置，對實施品線材及比較品線材，以打線接合機對專用的IC晶片進行接合，以100點為基準，使用Dage公司製的「萬能接合測試機(BT)(型式4000)」(商品名)，對球焊時的壓接焊球之剪切強度進行評估。該壓接焊球的剪切評估結果如表2所示。
表2中，「焊球剪切」係顯示第一接合中之剪切負載值，◎表示超過12kg/mm2；○表示超過10kg/mm2未滿12kg/mm2；而X表示未滿10kg/mm2或發生焊球剝離的情況。
從表2的結果明顯可知，關於信號波形之劣化測試，本發明的實施品1~38皆無發現劣化，相對於此，比較品39~47皆較差。
又，關於鋁飛濺測試、晶片受損測試及壓接焊球之剪切強度測試，本發明的實施品1~38為全部良好，相對於此，比較品39與40的壓接焊球之剪切強度測試較差，比較品42~46的鋁飛濺測試及晶片受損測試較差。
【產業上的利用性】
本發明的接合線，係最適合用於傳遞數千兆至數十千兆赫的超高頻信號的接合線，且具有作為適合廣泛高頻信號之傳送的信號用接合線的用途。

Claims (6)

  1. 一種高速信號線用接合線，其係一為了將半導體元件的焊墊電極與配線基板上的引線電極連接並含有微量添加元素之Ag-Pd-Pt三元系合金接合線，其特徵為：該接合線為三元合金，該三元合金含有0.8~2.5質量%的鈀(Pd)、0.1~0.7質量%的鉑(Pt)，而剩餘部分係由純度99.99質量%以上的銀(Ag)所構成；該接合線的剖面係由表皮膜與芯材所構成，該表皮膜係由連續鑄造之外皮層及表面偏析層所構成，而該表面偏析層形成於該外皮層上，係由含銀(Ag)量比芯材更多的合金所構成。
  2. 一種高速信號線用接合線，其係一為了將半導體元件的焊墊電極與配線基板上的引線電極連接並含有微量添加元素之Ag-Pd-Pt三元系合金接合線，其特徵為：該接合線為三元系合金，該三元系合金包含0.8~2.5質量%的鈀(Pd)、0.1~0.7質量%的鉑(Pt)、及總量為5~300質量ppm之作為微量添加元素的銠(Rh)、銥(Ir)、釕(Ru)、銅(Cu)、鎳(Ni)、鐵(Fe)、鎂(Mg)、鋅(Zn)、鋁(Al)、銦(In)、矽(Si)、鍺(Ge)、鈹(Be)、鉍(Bi)、硒(Se)、鈰(Ce)、釔(Y)、鑭(La)、鈣(Ca)或銪(Eu)中的至少一種以上的元素，而剩餘部分係由純度99.99質量%以上的銀(Ag)所構成；該接合線的剖面係由表皮膜與芯材所構成，該表皮膜係由連續鑄造之外皮層及表面偏析層所構成，而該表面偏析層形成於該外皮層上，係由含銀(Ag)量比芯材更多的合金所構成。
  3. 如申請專利範圍第1或2項之高速信號線用接合線，其中，該鈀(Pd)相對於鉑(Pt)的比例在5：1~10：1的範圍內。
  4. 如申請專利範圍第1或2項之高速信號線用接合線，其中，該高速信號的頻率為1~15千兆赫。
  5. 如申請專利範圍第1或2項之高速信號線用接合線，其中，該焊墊電極為純度99.9質量%以上的鋁(Al)金屬，或0.5~2.0質量%的矽(Si)或銅(Cu)、及剩餘部分為純度99.9質量%以上的鋁(Al)合金。
  6. 如申請專利範圍第1或2項之高速信號線用接合線，其中，該焊墊電極，係由金(Au)、鈀(Pd)或鉑(Pt)的表層所構成的電極焊墊。
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TWI792962B (zh) * 2021-06-25 2023-02-11 日商日鐵新材料股份有限公司 半導體裝置用接合線
US11721660B2 (en) 2021-06-25 2023-08-08 Nippon Micrometal Corporation Bonding wire for semiconductor devices
US11929343B2 (en) 2021-06-25 2024-03-12 Nippon Micrometal Corporation Bonding wire for semiconductor devices

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JP5420783B1 (ja) 2014-02-19
JP2014201797A (ja) 2014-10-27
CN104103616B (zh) 2017-03-29
TWI490995B (zh) 2015-07-01
US9972595B2 (en) 2018-05-15
SG2014000046A (en) 2014-11-27
KR20140121330A (ko) 2014-10-15
CN104103616A (zh) 2014-10-15
KR101635666B1 (ko) 2016-07-01

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