WO2006073206A1 - 半導体装置用ボンディングワイヤ - Google Patents

半導体装置用ボンディングワイヤ Download PDF

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Publication number
WO2006073206A1
WO2006073206A1 PCT/JP2006/300312 JP2006300312W WO2006073206A1 WO 2006073206 A1 WO2006073206 A1 WO 2006073206A1 JP 2006300312 W JP2006300312 W JP 2006300312W WO 2006073206 A1 WO2006073206 A1 WO 2006073206A1
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WIPO (PCT)
Prior art keywords
braking
control
amount
driving
target
Prior art date
Application number
PCT/JP2006/300312
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English (en)
French (fr)
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WO2006073206A9 (ja
Inventor
Tomohiro Uno
Yukihiro Yamamoto
Original Assignee
Nippon Steel Materials Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from JP2005000638A external-priority patent/JP4672373B2/ja
Priority claimed from JP2005189915A external-priority patent/JP2007012776A/ja
Priority claimed from JP2005193629A external-priority patent/JP2006216929A/ja
Application filed by Nippon Steel Materials Co., Ltd. filed Critical Nippon Steel Materials Co., Ltd.
Priority to US11/794,797 priority Critical patent/US7820913B2/en
Publication of WO2006073206A1 publication Critical patent/WO2006073206A1/ja
Publication of WO2006073206A9 publication Critical patent/WO2006073206A9/ja

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0255Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
    • B23K35/0261Rods, electrodes, wires
    • B23K35/0266Rods, electrodes, wires flux-cored
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    • B23K2101/00Articles made by soldering, welding or cutting
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Definitions

  • the present invention relates to an integrated vehicle control apparatus, and more particularly to a vehicle drive support control and a driving force.
  • the present invention relates to an integrated vehicle control apparatus that executes control and braking force control in an integrated manner.
  • An integrated vehicle motion control device that performs multiple types of vehicle motion control in a vehicle by controlling a plurality of actuators by a computer based on driving-related information
  • An integrated vehicle motion control device is already known in which an upper headquarters outputs a command to a lower headquarters, and the lower headquarters controls a plurality of actuators based on the commands.
  • the present invention has a high-level command unit and a low-level command unit, wherein the high-level command unit outputs a command to the low-level command unit, and the low-level command unit is configured to control a plurality of actuators based on the command.
  • the present invention has been made in view of the above-mentioned problems in the conventional integrated control device, and the main object of the present invention is to execute vehicle driving support control, driving force control, and braking force control in an integrated manner.
  • the main problem described above is based on driving support calculation control means for calculating a target braking / driving control amount of a vehicle for performing driving support by automatic control of braking / driving force, and driving operation of the driver.
  • the A driving amount calculation control means for calculating a driver required driving control amount and controlling the driving means based on at least a final target driving control amount based on the speed changer required driving control amount; and based on a driver's braking operation.
  • a braking amount calculation control means for controlling the braking means based on a final target braking control amount based on at least the driver required braking control amount.
  • the target braking / driving control amount of the driving support calculation control means is transmitted to the driving amount calculation control means, and the driving amount calculation control means calculates the target braking / driving control amount and the driver-requested driving control amount. This is achieved by a vehicle integrated control device that calculates the final target drive control amount by arbitrating.
  • the driving support calculation control means for calculating the target braking / driving control amount of the vehicle for performing driving support by automatic control of the braking / driving force, and the driver requested drive control based on the driving operation of the driver.
  • a drive amount calculation control means for controlling the drive means based on the final target drive control quantity based on at least the driver required drive control quantity, and a driver required brake control quantity based on the driver's braking operation.
  • a driving support arithmetic control means for calculating and controlling a braking means based on a final target braking control amount based on at least a driver requested braking control amount
  • a driving support arithmetic control means The target braking / driving control amount is transmitted to the driving amount calculation control means, and the final target driving control amount is calculated by adjusting the target braking control amount and the driver requested driving control amount by the driving amount calculation control means. Therefore, the drive amount calculation control means can calculate the final target drive control amount based on the target braking / driving control amount and the driver-requested drive control amount, while achieving driving support by automatic control of the braking / driving force.
  • the driving force can be controlled based on the driving operation of the driver.
  • the target braking / driving control amount and the driver-requested drive control amount are arbitrated, and the driving support arithmetic control means sends the target driving control quantity and the braking quantity arithmetic control means to the target driving control quantity and the target braking, respectively.
  • the amount of information transmitted and received between the driving support arithmetic control means and the driving amount arithmetic control means can be reduced.
  • the drive amount calculation control means distributes the target control drive control amount after arbitration to a target drive control amount and a target brake control amount, and the target brake control amount.
  • the control amount is preferably configured to be transmitted from the drive amount calculation control means to the braking amount calculation control means.
  • the driving amount calculation control means distributes the target braking / driving control amount after the arbitration to the target driving control amount and the target braking control amount, and the target braking control amount is controlled by the driving amount calculation control means by the braking amount calculation control Therefore, the drive amount calculation control means distributes the target braking / driving control amount after adjusting the target braking / driving control amount and the driver requested driving control amount to the target driving control amount and the target braking control amount.
  • the braking amount calculation control means can calculate the final target braking control amount based on the target braking control amount and the driver requested braking control amount.
  • the braking amount calculation control means adjusts the driver required braking control amount and the target braking control amount to adjust the final target braking control. It is preferable to calculate the quantity. According to this configuration, the braking amount calculation control means calculates the final target braking control amount by adjusting the driver requested braking control amount and the target braking control amount, so that driving assistance by automatic control of braking / driving force is provided. The braking force can be controlled based on the driver's braking operation while achieving the above.
  • the driving support calculation control means calculates a risk avoidance target braking amount when emergency braking for avoiding danger is necessary, and It is preferable that the target braking amount is directly transmitted from the driving support calculation control unit to the braking amount calculation control unit.
  • the driving assistance calculation control means calculates the risk avoidance target braking amount when emergency braking is necessary for avoiding danger, and the danger avoidance target braking amount is calculated by the driving assistance calculation control means.
  • the driving support calculation control means can transmit the risk avoidance target braking amount to the braking amount calculation control means without delay when emergency braking is required to avoid danger, and the risk avoidance target Compared with the case where the braking amount is transmitted to the braking amount calculation control means via the driving amount calculation control means, emergency braking for avoiding danger can be performed quickly.
  • the braking amount calculation control means mediates the driver-requested braking control amount, the target braking control amount, and the danger avoidance target braking amount. Therefore, it is preferable to calculate the final target braking control amount.
  • the braking amount calculation control means calculates the final target braking control amount by adjusting the driver requested braking control amount, the target braking control amount, and the danger avoidance target braking amount. The means can calculate the final target braking control amount based on the driver requested braking control amount, the target braking control amount, and the danger avoidance target braking amount.
  • the braking amount calculation control means when the braking amount calculation control means receives the danger avoidance target braking amount from the driving support calculation control means, the danger avoidance target is determined.
  • a braking amount is set as the final target braking control amount, and when the danger avoidance target braking amount is not received from the driving support calculation control means, the driver-requested braking control amount and the target braking control amount are arbitrated. It is preferable to calculate the final target braking control amount.
  • the risk avoidance target braking amount when the braking amount calculation control means receives the risk avoidance target braking amount from the driving support calculation control means, the risk avoidance target braking amount is set as the final target braking control amount, and the risk reduction avoidance from the driving support calculation control means.
  • the final target braking control amount is calculated by arbitrating between the driver requested braking control amount and the target braking control amount.
  • the final target drive control amount can be calculated based on the target braking / driving control amount and the driver requested drive control amount, and the driver's drive can be achieved while achieving driving support by automatic control of the braking / driving force.
  • the driving force can be controlled based on the operation.
  • the driving support calculation control means reliably calculates the final target braking control amount based on the risk avoidance target braking amount, and reliably achieves emergency braking for risk avoidance. can do.
  • the driving support calculation control means calculates the target braking / driving control amount in accordance with a driving support control mode, and the driving support control mode also includes It is preferably transmitted from the driving support calculation control means to the drive amount calculation control means.
  • the driving support calculation control unit calculates the target braking / driving control amount according to the driving support control mode, and the driving support control mode is also transmitted from the driving support calculation control unit to the driving amount calculation control unit. Therefore, the driving amount calculation control means can appropriately adjust the target braking / driving control amount and the driver-requested driving control amount according to the driving support control mode.
  • the driving support calculation control means when an abnormality occurs in the communication from the drive amount calculation control means to the braking amount calculation control means, the driving support calculation control means is the target. It is preferable to stop the calculation of the braking / driving control amount and the transmission to the driving amount calculation control means. According to this configuration, when an abnormality occurs in the communication from the drive amount calculation control means to the braking amount calculation control means, the driving support calculation control means calculates the target braking / driving control amount and transmits it to the drive amount calculation control means.
  • the braking amount calculation control means may control the driving force and the braking force based on at least the driver required driving control amount and the driver required braking control amount in a manner that does not consider the driver required braking control amount. it can.
  • the driving support is preferably automatic control of braking / driving force so as to make the distance between the preceding vehicle constant.
  • the driving support is an automatic control of braking / driving force to prevent the inter-vehicle distance from the preceding vehicle from becoming less than a reference value. I like it.
  • the driving support is preferably automatic control of braking / driving force to prevent a collision with an obstacle ahead of the vehicle.
  • the target drive control amount is also transmitted from the drive amount calculation control means to the braking amount calculation control means, and the braking amount calculation control means It is preferable that the target drive control amount is corrected with a correction amount for ensuring proper travel, and the corrected target drive control amount is transmitted to the drive amount calculation control means.
  • the drive amount calculation control means is configured to perform final target drive control based on the target drive control amount before correction and the target drive control amount after correction. It is preferable to calculate the quantity.
  • the braking amount calculation control means corrects the target braking control amount after the arbitration with a correction amount for ensuring stable traveling of the vehicle.
  • the final target braking control amount is preferably calculated based on the corrected target braking control amount.
  • the driving means preferably includes a hybrid system including an internal combustion engine and a motor generator.
  • the motor generator has a regenerative function
  • the braking amount calculation control means determines the final target braking control amount as the target friction braking control amount and the target regeneration control amount.
  • the target regenerative braking control amount is transmitted from the braking amount calculation control means to the driving amount calculation control means. It is preferable.
  • the drive amount calculation control means controls the internal combustion engine based on the final target drive control amount, and controls the electric power based on the target regenerative braking control amount. It is preferable to control the generator.
  • FIG. 1 is a schematic configuration diagram showing a first embodiment of a vehicle integrated control apparatus according to the present invention applied to a rear wheel drive vehicle.
  • FIG. 2 is a block diagram showing the control system of the first embodiment.
  • FIG. 3 is a flowchart showing an arbitration control routine by the first arbitrator and a braking / driving force distribution control routine by the braking / driving force distributor in the driving force control electronic control apparatus of the first embodiment.
  • FIG. 4 is a flowchart showing an arbitration control routine by the arbitrator of the braking force control electronic control device of the first embodiment.
  • FIG. 5 is a flow chart showing a vehicle motion compensation control routine by the vehicle motion compensator of the braking force control electronic control device of the first embodiment.
  • FIG. 6 is a flowchart showing an arbitration control routine by the second arbiter of the driving force control electronic control apparatus of the first embodiment.
  • FIG. 7 is a schematic configuration diagram showing a second embodiment of the vehicle integrated control apparatus according to the present invention applied to a front wheel drive type vehicle equipped with a hybrid system.
  • FIG. 8 is a block diagram showing a control system of the second embodiment. '
  • FIG. 1 is a schematic configuration diagram showing a first embodiment of a vehicle integrated control apparatus according to the present invention applied to a rear wheel drive vehicle
  • FIG. 2 is a block diagram showing a control system of the first embodiment.
  • 10 indicates an engine, and the driving force of the engine 10 is a torque converter.
  • the driving force of the propeller shaft 1 8 is differential 2 0 Is transmitted to the left rear wheel axle 2 2 L and the right rear wheel axle 2 2 R, whereby the left and right rear wheels 2 4 RL and 2 4 RR, which are drive wheels, are rotationally driven.
  • the left and right front wheels 2 4 FL and 2 4 FR are both driven and steered wheels, not shown in Figure 1, but driven by the steering wheel turning by the driver. It is steered via a tie rod by an and pinion type power steering device.
  • the braking force of the left and right front wheels 2 4 FL, 2 4 FR and the left and right rear wheels 2 4 RL, 2 4 RR is the wheel cylinder corresponding to the hydraulic circuit 2 8 of the braking device 2 6 3 O FL, 3 0 FR, 3 0 It is controlled by controlling the braking pressure of RL, 30 RR.
  • the hydraulic circuit 28 includes an oil reservoir, an oil pump, various valve devices, and the like.
  • the braking / driving force of the vehicle is controlled by the integrated control electronic control unit 32.
  • the integrated control electronic control unit 3 2 controls the output of the engine 10 and the transmission speed of the transmission 1 6 according to the operation of the accelerator pedal 3 4 by the driver, the engine load, etc. and the brake pedal by the driver.
  • 3 Controls the hydraulic circuit 2 8 according to the depressing operation of 6, and controls the output of the engine 10 and transmission 1 6 to control the vehicle's running movement as necessary, and the hydraulic circuit 2 This controls the braking / driving force of the vehicle.
  • the integrated control of braking / driving force executed by the integrated control electronic control device 32 will be described in more detail.
  • the braking / driving force, driving force, and braking force are all in the vehicle driving direction. Therefore, the smaller value in the comparison of a plurality of braking forces is the larger value as the braking strength.
  • the integrated control electronic control device 3 2 includes a driving support electronic control device 40 that supports the driving of the driver, a driving force control electronic control device 42 that controls the driving force of the vehicle, And a braking force control electronic control device 44 for controlling the driving force of each wheel.
  • the driving support electronic control device 40, the driving force control electronic control device 4 2, and the braking force control electronic control device 4 4 are respectively input / output to / from the CPU, ROM, and RAM.
  • a port device and these may be composed of a microphone port computer and a drive circuit connected to each other by a bidirectional common bus.
  • the driving support electronic control unit 40 has a signal indicating the inter-vehicle distance L between the preceding vehicle in front of the vehicle from the vehicle 50, such as a radar, and an obstacle detection sensor 52, such as a CCD camera, in front of the vehicle. A signal indicating the presence or absence of an obstacle is input.
  • the driving assistance electronic control unit 40 is operated by the inter-vehicle distance detection sensor 50 when the inter-vehicle distance control switch (not shown) is in the ON state.
  • Distance between the preceding vehicle and the vehicle speed L and vehicle speed sensor 54 Target braking / driving to keep the distance between the vehicle and the preceding vehicle within a specified range based on the vehicle speed V input from 4 Force is calculated as driving support target braking / driving force F xtdss.
  • the driving support electronic control unit 40 is based on the inter-vehicle distance L from the preceding vehicle input from the inter-vehicle distance detection sensor 50 and the vehicle speed V input from the vehicle speed sensor 54, and the inter-vehicle distance from the preceding vehicle.
  • the target braking / driving force is set to drive the target braking / driving force to make the inter-vehicle distance between the preceding vehicle and the preceding vehicle safer than the reference value.
  • the driving support electronic control unit 40 also receives information on the presence / absence of an obstacle ahead of the vehicle input from the obstacle detection sensor 52, and the distance between the vehicle and the obstacle in front of the vehicle input from the inter-vehicle distance detection sensor 50.
  • Distance L based on vehicle speed V input from vehicle speed sensor 54, to determine the possibility of collision with an obstacle, and to prevent collision with an obstacle when there is a possibility of collision with the obstacle.
  • the target braking / driving force F xbtpc s is calculated as the driving support target braking / driving force F xtdss.
  • the driving assistance electronic control unit 40 performs driving with a signal indicating that the driver assistance control mode is inter-vehicle distance control when the above-mentioned inter-vehicle distance control is performed and the driving assistance target braking / driving force F xtds s is calculated.
  • a signal indicating the assist target braking / driving force F xtdss is output to the driving force control electronic control device 42 and the above-described auxiliary braking control is performed to calculate the driving assist target braking / driving force F xtdss, the driver assist control is performed.
  • a signal indicating the driving assistance target braking / driving force F xtdss together with a signal indicating that the mode is the assist braking control is output to the driving force control electronic control device 42, and the above-described collision prevention control is performed to perform the driving assistance target braking / driving force F
  • a signal indicating the driving support target braking / driving force F xtdss is displayed together with the ON signal of the anti-collision control request flag F pcs indicating that the driver support control mode is anti-collision control. And outputs it to the control device 4 4.
  • the driving force control electronic control unit 42 has a first arbiter 56, and the first arbiter 56 has a driving operation amount detected by a driving operation amount detection sensor 58 such as an accelerator opening sensor. The signal shown is also input.
  • the first arbiter 5 6 calculates the vehicle driver's required target driving force F xddt based on the driver's driving operation amount input from the driving operation amount detection sensor 58, and according to the driver assistance control mode. By adjusting the driver's required target driving force F xddt and the driving support target braking / driving force F xtdss, the vehicle's total target braking / driving force F xdtt is calculated and a signal indicating the total target braking / driving force F xdtt is controlled.
  • Force distributor 6 Outputs to 0. '
  • the braking / driving force distributor 6 0 is the vehicle's total target braking / driving force F xdtt and the vehicle's target driving force F xpt Distribute to the target braking force F xbt.
  • the braking / driving force distributor 60 outputs a signal indicating the target driving force F xpt to the second arbiter 6 2 and the braking force control electronic controller 4 4 to the driving force vehicle motion compensator 6 4.
  • a signal indicating the target braking force F xbt is output to the arbiter 6 6 of the braking force control electronic control unit 44.
  • the vehicle motion compensator for driving force 64 calculates the vehicle motion compensation target driving force F xdct to cancel the cornering drag of the vehicle and improve the riding comfort of the vehicle.
  • the driving force vehicle motion compensator 64 outputs a signal indicating the vehicle motion compensation target driving force F xdct to the second arbiter 62 of the driving force control electronic control device 42.
  • the motion control target drive force F xvdt of the vehicle is calculated as the sum of the drive forces of the wheel motion control target drive power F xvti.
  • the vehicle motion compensator 6 4 is the larger of the motion control target drive force F xvdt and the drive force control electronic controller 4 2, the vehicle target drive force F xpt, which is input from the braking / drive distributor 6 0.
  • the value is set to the target driving force F xpvt after vehicle motion compensation, and a signal indicating the target driving force F xpvt is output to the second arbiter 6 2 of the driving force control electronic control device 4 2.
  • the second arbiter 6 2 of the driving force control electronic controller 4 2 calculates the final target driving force F xptt by adjusting the target driving force F xpt and the target driving force F xpvt after vehicle motion compensation.
  • the vehicle motion compensation target driving force F xdct is added to the driving force F xptt to correct the final target driving force F xptt, and the corrected final target driving force F xptt is output to the distributor 68.
  • the distributor 68 calculates the target output of the engine 10 and the target gear stage of the transmission 16 based on the corrected final target driving force F xptt, and outputs the output of the engine 10 and transmission 14 of the transmission 14. By controlling the gears so as to reach the target output and the target shift speed, the output of the engine 10 and the transmission 16 are controlled so that the vehicle driving force becomes the corrected final target driving force F xptt.
  • Brake force control electronic control device 4 4 Arbiter 6 6 has a pressure sensor that detects the pressure in the master cylinder 70 of the brake device 2 6, a pedal force sensor that detects the pedal force of the brake pedal 3 6, and brake pedal 3 6 Brake operation amount detection sensor like a stroke sensor that detects the depression stroke
  • a signal indicating the amount of braking operation of the driver is input.
  • the arbiter 66 calculates the driver required braking force F xdbt based on the driver's braking operation amount.
  • the arbiter 6 6 is a driver assistance control mode by the driving assistance electronic control device 40. If not, the target braking force input from the driver's required braking force F xdbt and braking / driving force distributor 60
  • the vehicle's total target braking force F xbtt is calculated, and when the driver assistance control mode by the driving assistance electronic control device 4 0 is the collision prevention control, the driving assistance electronic control device 4 0
  • the driving support target braking / driving force F xtdss (anti-collision target braking force F xbtpc s) input from the vehicle is defined as the total target braking force F xbtt of the vehicle.
  • the arbiter 6 6 outputs a signal indicating the total target braking force F xbtt to the braking force vehicle motion compensator 7 4, and the braking force vehicle motion compensator 7 4 applies the total target braking force F xbtt to each wheel.
  • the target braking force F wbtti of each wheel is calculated based on the total target braking force F xbtt.
  • the vehicle motion compensator for braking force 74 contains a signal indicating the target braking / driving force F xvti for each wheel to stabilize vehicle behavior or prevent deterioration of vehicle behavior.
  • the driving force control electronic control unit 42 monitors whether the driving support electronic control unit 40 and the driving support target braking / driving force F xtdss calculated thereby are normal.
  • the monitoring device includes the driving support target braking / driving force F xtdss and the control. Operation via a communication path between the driving force control electronic control unit 42 and the driving support electronic control unit 40, which is different from the communication path for transmitting the mode, or via the braking force control electronic control unit 44. Outputs a command signal to stop driving support control and transmission to the support electronic control unit 40.
  • the braking force control electronic control unit 44 has a monitoring device for monitoring whether or not the communication between the driving force control electronic control unit 42 and the braking force control electronic control unit 44 is normal. When it is determined that the communication between the power control electronic control device 42 and the braking force control electronic control device 44 is abnormal, the communication device is different from the communication path for transmitting the target braking force F xbt etc.
  • the communication path between the driving force control electronic control device 4 2 and the braking force control electronic control device 4 4 and the driving force control electronic control device 4 2 to the driving support electronic control device 40 or to the driving support electronic control Outputs a command signal to stop driving support control and transmission directly to device 40.
  • the function of this monitor is the monitor of the driving force control electronic control unit 42. May be achieved.
  • the monitor of the braking force control electronic control unit 44 also monitors whether the communication between the driving support electronic control unit 40 and the braking force control electronic control unit 44 is normal, and the driving support electronic control unit 44. When it is determined that the communication between the control device 40 and the braking force control electronic control device 44 is abnormal, the driving support electronic control device 40 different from the communication path for transmitting the target braking force F xtdss etc. Outputs command signals to stop driving support collision prevention control and transmission to the driving support electronic control device 4 0 via the communication path between the braking control electronic control device 4 4 and the driving force control electronic control device 4 2 To do.
  • a warning device (not shown) is activated to issue a warning that an abnormality corresponding to the vehicle occupant has occurred.
  • steps 10 to 70 are the arbitration control routines by the first arbitrator 56
  • steps 100 to 120 are the control by the braking / driving force distributor 60. This is a routine for controlling the distribution of driving force.
  • step 10 a signal indicating the driver's driving operation amount detected by the driving operation amount detection sensor 58 is read, and the vehicle driver's required target system is determined based on the driver's driving operation amount.
  • the driving force F xddt is calculated, and in step 20, a signal indicating the driver assistance control mode and the driving assistance target braking / driving force F xtdss is read from the driving assistance electronic control unit 40. .
  • step 30 it is determined whether or not the driver support control mode is inter-vehicle distance control. If an affirmative determination is made, the total target braking / driving force of the vehicle F xdtt is determined in step 40. Is set to the larger value of the driver required target braking / driving force F xddt and the driving support target braking / driving force F xtdss, and if a negative determination is made, the routine proceeds to step 50.
  • step 50 it is determined whether the driver assistance control mode is auxiliary braking control. If an affirmative determination is made, in step 60, the total target braking / driving force F xdtt of the vehicle is determined. Is set to the smaller one of the driver required target braking / driving force F xddt and the driving support target braking / driving force F xtdss, and when a negative determination is made, the routine proceeds to step 60.
  • step 70 it is determined whether or not the driver support control mode is collision prevention control. If an affirmative determination is made, the total target braking / driving force F of the vehicle is determined in step 80. When xdtt is set to the minimum value F xdmin of the mechanically generated driving force of engine 10 and transmission 16 and a negative determination is made, the vehicle's total target braking / driving force F xdtt operates in step 90. Required target braking / driving force F xddt.
  • step 100 it is determined whether or not the total target braking / driving force F xdtt of the vehicle is larger than the minimum value F xdmin of the mechanically generated driving force of the engine 10 and transmission 16;
  • the vehicle target driving force F xpt is set to the vehicle total target braking / driving force F xdtt, and the vehicle target braking force F xbt is set to 0
  • the vehicle target driving force F xpt is set to the minimum value F xdmin of the mechanically generated driving force of the engine 10 and transmission 16 in step 1 2 0 and the vehicle target
  • the braking force F xbt is set to the value F xdtt-F xdmin obtained by subtracting the minimum value F xdmin from the total target braking / driving force F xdtt of the vehicle.
  • step 1 3 a signal indicating the target driving force F xpt is output to the second arbiter 62 and the vehicle motion state compensator 6 4 of the braking force control electronic control device 44 and A signal indicating the power F xbt is output to the arbiter 66 of the braking force control electronic control unit 44.
  • step 210 a signal indicating the amount of braking operation of the driver detected by the braking operation amount detection sensor 70 is read, and the driver's requested braking force is determined based on the amount of braking operation of the driver.
  • F xdbt is calculated, and in step 2 2 0, a signal indicating the target braking force F xbt of the vehicle is read from the braking / driving force distributor 60 of the driving force control electronic control unit 4 2, step 2 3
  • the collision prevention control request flag F pcs signal and the signal indicating the driving support target braking / driving force F xtdss are read.
  • step 2 0 it is determined whether or not the anti-collision control request flag F pcs is on. If a negative determination is made, the total target braking force F xbtt of the vehicle is determined in step 2 5 0. Is set to the smaller value of the driver required braking force F xdbt and the vehicle target braking force F xbt, and if a positive determination is made, the vehicle's total target braking force F xbtt is Is set to the driving support target braking / driving force F xtdss for collision prevention control.
  • step 2700 a signal indicating the target braking force F xsht for controlling the shift shock calculated by the driving force control electronic control device 42 is read although not shown in the figure.
  • the total target braking force F xbtt of the corrected vehicle is calculated.
  • step 3 10 the vehicle's target longitudinal force F vsct and target homing are used to stabilize vehicle behavior or prevent vehicle behavior deterioration, such as anti-spin control, anti-drift graph control, and tack-in control.
  • rl, rr the smaller one of the behavior control target braking / driving force F xvscti and the slip reduction target braking / driving force F xslti for each wheel is the vehicle motion compensation target.
  • braking / driving force F xdcti (i fl, fr, rl, rr).
  • Step 3 5 the braking force is assumed to be 0, and the sum of the driving forces of the vehicle motion compensation target braking / driving force F xdcti is calculated as the temporary vehicle motion compensation target driving force F xdctp of the vehicle.
  • the vehicle motion compensation target driving force F xdct is the vehicle's provisional vehicle motion compensation target driving force F xdct and the target driving force F xpt inputted from the braking / driving force distributor 60 of the driving force control electronic control unit 42. The larger value is set.
  • step 4 10 a signal indicating the target driving force F xpvt after vehicle motion compensation is read from the braking force vehicle motion compensator 7 4 of the braking force control electronic control device 4 4, and step 4
  • F is the positive constant based on the target driving force F xpt and the target driving force F xpvt after vehicle motion compensation, and is an intermediate value between F xpt—H, F xdct, F xpt + ⁇
  • is a guard value for preventing the final target driving force F xptt from becoming an abnormal value due to the abnormality of the braking force control electronic control unit 44.
  • step 4 30 a signal indicating the vehicle motion compensation target driving force F xdct is read from the braking force vehicle motion compensator 7 4 of the braking force control electronic control device 4 4, and the final target driving force F xptt Is added to the vehicle motion compensation target driving force F xdct to calculate the final target driving force F xptt after correction, and a signal indicating the corrected final target driving force F xptt is output to the distributor 68.
  • the driving support target braking / driving force F xtdss is calculated by the driving assistance electronic control device 40 and the first arbiter 5 of the driving force control electronic control device 42 is used. 6 and the first arbiter 56 adjusts the vehicle driver's requested target braking / driving force F xddt and the driving support target braking / driving force F xtdss based on the driving operation amount of the driver.
  • the total target braking / driving power F xdtt is calculated, and the braking / driving force distributor 60 distributes the vehicle total target braking / driving force F xdtt to the vehicle target driving force F xpt and the vehicle target braking force F xbt.
  • the vehicle motion compensation compensator for driving force 6 4 of the braking force control electronic control device 4 4 6 4 The vehicle motion compensation target driving force F xdct and the vehicle behavior stabilization or vehicle behavior deterioration to improve the riding comfort of the vehicle
  • the target driving force F xpv after vehicle motion compensation for prevention is calculated, and the target driving force F xpt and the target driving force after compensation of the vehicle motion are calculated by the second arbiter 6 2 of the driving force control electronic control device 4 2
  • the final target driving force F xptt is calculated by mediating F xpvt and the final target driving force F xptt is calculated by adding the vehicle motion compensation target driving force F xdct to the final target driving force F xptt.
  • the distributor 68 controls the output of the engine 10 and the transmission 16 so that the vehicle driving force becomes the corrected final target driving force F xptt.
  • the vehicle target braking force F xbt is transmitted to the arbiter 6 6 of the braking force control electronic control unit 44, and the arbiter 6 6 and the driver requested braking force F xdbt based on the driver's braking operation amount and the target
  • the total target braking force F xbtt of the vehicle is calculated by adjusting the power F xbt and the target driving force F xpv after vehicle motion compensation to stabilize the vehicle behavior or prevent the deterioration of the vehicle behavior.
  • the target braking force F wbti of each wheel is calculated, and the braking device 26 controls the braking force of each wheel to the corresponding target braking force F wbti. Is done.
  • the final target driving force F xptt is calculated based on the driving support target braking / driving force F xtdss and the driver required target driving force F xddt, and the driving assistance target braking / driving force is calculated.
  • the target braking force F wbti of each wheel can be calculated based on the driving force F xtdss and the driver's required target braking force F xdbt, thereby achieving driving support by automatic control of the braking / driving force.
  • the braking / driving force of each wheel can be controlled based on the braking / driving operation.
  • arbitration between the driver requested target braking / driving force F xddt and the driving assistance target braking / driving force F xtdss and the driving assistance target braking / driving force F xtdss and the driver requested target driving force F xtdss are performed.
  • F with xddt Since the information necessary for arbitration need not be transmitted from the driving force control electronic control unit 42 and the braking force control electronic control unit 44 to the driving support electronic control unit 40, the driving support electronic control unit 40 Compared to the case where the target value is adjusted and the target driving force and the target braking force are transmitted from the driving support electronic control unit 40 to the driving force control electronic control unit 42 and the braking control electronic control unit 44, respectively.
  • the amount of information transmitted and received between the driving support electronic control device 40 and the driving force control electronic control device 4 2 and the braking force control electronic control device 44 can be reliably reduced.
  • the driving support control electronic device 40 controls the driving force control electronic device. If the transmission of the driving support target braking / driving force F xtdss to the control device 4 2 is stopped, the driving force is influenced by the fact that the driving support electronic control device 40 or its driving support target braking / driving force F xtdss becomes abnormal. Control of the control electronic control device 4 2 and the braking force control electronic control device 4 4 can be reliably prevented.
  • the driving force control electronic control unit 4 2 applies the target braking force F to the braking force control electronic control unit 4 4. If transmission of xbt is stopped, it will be surely prevented that the influence of the abnormal braking force control electronic control device 4 2 or vehicle target braking force F xbt affects the control of the braking force control electronic control device 44. can do.
  • the driver assistance control mode is the collision prevention control.
  • a signal indicating the driving support target braking / driving force F xtdss is transmitted directly to the braking force control electronic control device 4 4 together with the ON signal of the F pcs control signal indicating the control, and the braking force control electronic control device 4
  • the arbiter 6 of 6 uses the anti-collision target braking force F xbtpcs as the vehicle's total target braking force F xbtt, so when emergency braking is required to prevent collision, the anti-collision target braking force F xbtpcs is controlled without delay.
  • Power control electronic control device 4 4 can be transmitted to the arbiter 6 6 and the collision prevention target braking force F xbtpcs is also driven as the driving support target braking / driving force F xtdss via the driving force control electronic control device 4 2 braking force control electronic Sent to controller 4 4 In comparison with a case, an emergency braking quickly anticollision can line Ukoto.
  • the driving support control mode is also transmitted from the driving support electronic control device 40 to the first arbiter 56 of the driving force control electronic control device 42.
  • Arbiter 5 6 is the driver Since the driver requested target driving force F xddt and the driving assistance target braking / driving force F xtdss are arbitrated according to the control mode of assistance, the driver requested target driving force F xddt and the driving assistance target braking / driving force F xtdss are operated. Arbitration can be appropriately performed according to the driver assistance control mode by the assisting electronic control device 40.
  • FIG. 7 is a schematic configuration diagram showing a second embodiment of the vehicle integrated control device according to the present invention applied to a front wheel drive type vehicle equipped with a hybrid system
  • FIG. It is a block diagram which shows the control system of the Example of. 7 and 8, the same members as those shown in FIGS. 7 and 8 are denoted by the same reference numerals as those shown in FIGS.
  • 1 1 0 shows a hybrid system for driving the front wheels
  • the hybrid system 1 1 0 includes a gasoline engine 1 1 2 and a motor generator 1 1 4.
  • the output shaft 1 1 6 of the gasoline engine 1 1 2 is connected to the input shaft of the continuously variable transmission 1 1 8 with a built-in clutch, and the input shaft of the continuously variable transmission 1 1 8 is the motor generator 1 1 4
  • the output shaft 1 2 0 is also connected. Rotation of the output shaft 1 1 9 of the continuously variable transmission 1 1 8 is transmitted to the left and right front wheel axles 1 2 4 FL and 1 2 4 FR via the front differential 1 2 2, thereby the left and right front wheels 2 4 FL and 2 4 FR is driven to rotate.
  • Hybrid system 1 1 0 Gasoline engine 1 1 2 and motor generator 1 1 4 are controlled by the integrated control electronic control device 1 2 6 according to the amount of depression of the accelerator pedal 3 4 by the driver and the running condition of the vehicle. Is controlled accordingly.
  • the motor generator 1 1 4 also functions as the generator of the front wheel regenerative braking device 1 2 8, and the function as the regenerative generator (regenerative braking) is also controlled by the integrated control electronic control device 1 2 6.
  • the hybrid system 1 1 0 is a gasoline engine 1 1 2 or a gasoline engine during normal driving with a shift lever (not shown) in the D range.
  • Left and right front wheels 2 4 F 2 4 FR and left and right rear wheels 2 4 RL, 2 4 RR friction braking force is corresponding to wheel cylinder by friction brake device 2 6 hydraulic circuit 2 8 3 O FL, 3 0 FR , 30 RL, 30 RR is controlled by controlling the control pressure.
  • the hydraulic circuit 28 includes a reservoir, an oil pump, various valve devices, etc., and the braking pressure of each wheel cylinder normally depends on the amount of depression of the brake pedal 3 6 by the driver. Are controlled by the integrated control electronic control unit 1 2 6.
  • the integrated control electronic control device 1 2 6 includes a driving support electronic control device 40 that supports the driving of the driver, and a driving force control electronic control device 4 2 that controls the driving force of the vehicle. And a braking force control electronic control unit 44 that controls the driving force of each wheel.
  • the driving support electronic control device 40, the driving force control electronic control device 4 2, and the braking force control electronic control device 4 4 are respectively CPU, ROM, RAM and I / O ports. And a microphone circuit computer and a drive circuit connected to each other by a bidirectional common bus.
  • the driving support electronic control unit 40 functions in the same manner as the driving support electronic control unit 40 in the first embodiment described above, and performs the inter-vehicle distance control and calculates the driving support target braking / driving force F xtdss.
  • a signal indicating that the driver assistance control mode is inter-vehicle distance control and a signal indicating the driving assistance target braking / driving force F xtdss are output to the driving force control electronic control device 42, and the above auxiliary braking control is performed for driving.
  • a signal indicating that the driver assist control mode is auxiliary braking control and a signal indicating the driving assist target braking / driving force F xtdss are included in the driving force control electronic control 4 Output to 2 and when the above-mentioned collision prevention control is performed and the driving assistance target braking / driving force F xtdss is calculated, the collision prevention control request flag F pcs indicating that the driver assistance control mode is the collision prevention control.
  • ON signal and A signal indicating the driving support target braking-driving force F Xtdss output to braking force control electronic control device 4 4.
  • the driving force control electronic control device 4 2 has a first arbiter 5 6, a braking / driving torque distributor 80, a second arbiter 6 2, and a regeneration judgment device 8 2, and the first arbiter 5 6 Similar to the first arbiter 56 in the first embodiment described above, the vehicle driver's requested target braking / driving force based on the driver's drive operation amount input from the drive operation amount detection sensor 58 is used. F xddt is calculated, and the first arbiter 56 calculates the total target braking / driving force F xdtt of the vehicle by adjusting the driver requested target braking / driving force F xddt and the driving support target braking / driving force F xtdss. To do. The first arbiter 5 6 is based on the total target braking / driving force F xdtt.
  • the total target braking / driving torque Txdtt of the vehicle is calculated as a value corresponding to the target braking / driving torque on the output shaft 1 1 9 of the step transmission 1 1 8 and the signal indicating the toddler target braking / driving torque T xdtt is controlled. Output to drive torque distributor 80.
  • the braking / driving torque distributor 80 distributes the total target braking / driving torque T xdtt of the vehicle to the target driving torque T xpt of the vehicle and the target braking torque Txbt of the vehicle.
  • the braking / driving torque distributor 80 outputs a signal indicating the target driving torque T xpt to the second arbiter 6 2 and the vehicle motion state compensator 6 4 of the braking force control electronic control device 4 4.
  • a signal indicating the target braking torque T xbt is output to the arbiter 66 of the braking force control electronic control unit 44.
  • the vehicle motion compensator for driving force 64 calculates the vehicle motion compensation target drive torque T xdct for canceling the cornering drag of the vehicle and improving the ride comfort of the vehicle.
  • the driving force vehicle motion compensator 64 outputs a signal indicating the vehicle motion compensation target driving torque T xdct to the second arbiter 62 of the driving force control electronic control device 42.
  • a vehicle motion control target drive torque T xvd t is calculated as the sum of the drive torques of the wheel motion control target brake drive torque T xvti.
  • the vehicle motion compensator 6 4 calculates the larger value of the vehicle control target drive torque T xvdt and the vehicle target drive torque T xpt input from the braking / drive distributor 60 of the drive force control electronic control device 42.
  • a signal indicating the target driving torque Txpvt is output to the second arbiter 62 of the driving force control electronic control device 42 as the target driving torque Txpvt after vehicle motion compensation.
  • the second arbiter 6 2 of the driving force control electronic controller 4 2 calculates the final target driving torque T xptt by adjusting the target driving torque T xpt and the target driving torque T xpvt after vehicle motion compensation.
  • the vehicle drive compensation target drive torque T xdct is added to the target drive torque T xptt to correct the final target drive torque T xptt, and the gasoline engine 1 1 2 and the electric generator based on the corrected final target drive torque T xptt 1 1 4 target output and continuously variable transmission 1 1 8 target gear ratio is calculated, and the output of gasoline engine 1 1 2 and motor generator 1 1 4 becomes the corresponding target output respectively, and continuously variable transmission
  • the hybrid system 1 1 0 is controlled so that the vehicle driving force becomes the final target driving torque T xptt after correction.
  • Arbiter 6 6 has a pressure sensor that detects the pressure in the master cylinder 70 of the brake device 2 6, a pedal force sensor that detects the pedal force of the brake pedal 3 6, brake pedal 3 6 Braking operation amount detection sensor like a stroke sensor that detects the depression stroke A signal indicating the amount of braking operation of the driver is input from 72.
  • the arbiter 66 calculates the driver-requested braking torque Txdbt based on the driver's braking operation amount.
  • the arbiter 6 6 uses the driver requested braking torque Txdbt and the target braking torque Txbt input from the braking / driving force distributor 60 when the driver assistance control mode by the driving assistance electronic control unit 40 is not the collision prevention control.
  • the vehicle's total target braking torque Txbtt is calculated, and when the driver assistance control mode by the driving assistance electronic control unit 40 is anti-collision control, the collision prevention input from the driving assistance electronic control unit 40 is performed.
  • the target braking torque Txbtpcs is the vehicle total target braking torque Txbtt.
  • the arbiter 66 outputs a signal indicating the total target braking torque Txbtt to the braking force vehicle motion compensator 74.
  • the braking force vehicle motion compensator 74 calculates the total by distributing the total target braking torque Txbtt to each wheel. Based on the target braking torque Txbtt, the target braking force Fwbtti of each wheel is calculated.
  • the vehicle force compensator 74 for braking force receives a signal indicating the vehicle control target braking / driving force Fxvti for stabilizing the vehicle behavior or preventing the deterioration of the vehicle behavior from the vehicle motion compensator 64 for driving force.
  • the braking force distributor 84 calculates the target regenerative braking force Frwbtf for the left and right front wheels based on the target braking force Fwbtfl and Fwbtfr for the left and right front wheels, and determines the regeneration of the driving force control electronic control unit 42 based on the signal indicating the target regenerative braking force Frwb1; f. Output to device 8.
  • a signal indicating the actual regenerative braking force Frwbaf of the left and right front wheels is input to the braking force distributor 84 from the regenerative judgment device 82, and the braking force distributor 84 subtracts FrwbafZS from the target braking forces F wbt fl and Fwbtfr of the left and right front wheels.
  • the target friction braking forces Ffwbtfl and F fwbtfr of the left and right front wheels are calculated, and the target braking forces Fwbtrl and F wbtrr of the left and right rear wheels are set as the target friction braking forces Ffwbtrl and Ffwbtrr of the left and right rear wheels, respectively.
  • the regenerative judging device 82 controls the motor generator 1 14 of the hybrid system 1 1 0 based on the target regenerative braking force Frwbtf so that the regenerative braking force of the left and right front wheels becomes the target regenerative braking force Frwb1; f of the left and right front wheels.
  • the power distributor 84 controls the hydraulic circuit 28 of the friction braking device 26 so that the friction braking force of each wheel becomes the corresponding target friction braking force Ffwbti.
  • the driving assistance control mode by the driving assistance electronic control device 40 is an inter-vehicle distance control for setting the inter-vehicle distance to the preceding vehicle to a value within a predetermined range.
  • Auxiliary braking control is used to make the inter-vehicle distance from the preceding vehicle a safe inter-vehicle distance above the reference value, and anti-collision control is used to prevent collisions with obstacles.
  • the driving mode is not limited to the illustrated control mode, and any of the driving assistance control modes may be omitted.
  • the vehicle is a rear wheel drive vehicle, but the integrated control device of the present invention may be applied to a front wheel drive vehicle or a four wheel drive vehicle.
  • the vehicle is a front-wheel drive vehicle in which the front wheels are driven by a hybrid system, but a rear-wheel drive vehicle or a hybrid vehicle in which the rear wheels are driven by a hybrid system.
  • the present invention may be applied to a four-wheel drive vehicle in which a front wheel is driven by a power system and a rear wheel is driven by a capturing motor generator, or a four-wheel drive vehicle in which a front wheel and a rear wheel are driven by a hybrid system.
  • the control amount exchanged between the regeneration judgment device 82 and the braking force distributor 84 is the braking force.
  • the output shaft of the hybrid system It may be a braking torque in

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Abstract

本発明は、ボール部の形成性、接合性を改善し、ループ制御性も良好であり、ウェッジ接続の接合強度を高め、工業生産性にも確保し、金ワイヤよりも安価な銅を主体とするボンディングワイヤを提供するものであり、銅を主成分とする芯材と、該芯材の上に芯材と異なる組成の導電性金属の表皮層を有するボンディングワイヤであって、前記表皮層の主成分が、金、パラジウム、白金、ロジウム、銀又はニッケルから選ばれる2種以上であり、前記表皮層内にワイヤ径方向に主成分金属又は銅の一方又は双方の濃度勾配を有する領域が存在することを特徴とする半導体装置用ボンディングワイヤである。

Description

明 細 書
車輛の運転支援制御、 駆動力制御、 制動力制御を統合的に実行する車輛の統合制御装置 技術分野 本発明は、 車輛の統合制御装置に係り、 更に詳細には車輛の運転支援制御、 駆動力制御、 制動力制御を統合的に実行する車輛の統合制御装置に係る。 背景技術
自動車等の車輛の制御装置の一つとして、例えば本願出願人の出願にかかる特開 2 0 0 3 - 1 9 1 7 7 4号公報に記載されている如く、運転者による車輛の運転に関連する運転関連 情報に基づいて複数のァクチユエータをコンピュータによって統合的に制御することによ り、 車輛に於いて複数種類の車輛運動制御を実行する統合型車輛運動制御装置であって、 上 位司令部と下位司令部とを有し、 上位司令部が下位司令部へ指令を出力し、 下位司令部が指 令に基づいて複数のァクチユエ一タを制御する統合型車輛運動制御装置が既に知られてい る。
上述の如き従来の車輛の統合制御装置に於いては、 上位司令部に異常が生じると、 その影 響が下位司令部に及ぶため、 信頼性の点で問題があり、 また複数種類の車輛運動制御に関連 する情報及ぴ下位司令部の間の調整に必要な情報が上位司令部に入力されなければならな いため、 上位司令部と下位司令部との間に於ける情報の送受信量が多くなるという問題があ る。 発明の開示 本発明は、 上位司令部と下位司令部とを有し、 上位司令部が下位司令部へ指令を出力し、 下位司令部が指令に基づいて複数のァクチユエータを制御するよう構成された従来の統合 制御装置に於ける上述の如き問題に鑑みてなされたものであり、 本発明の主要な課題は、 車 輛の運転支援制御、 駆動力制御、 制動力制御を統合的に実行するに当り、 各制御の制御装置 の間に於ける情報の授受を単純化することにより、各制御装置の間に於ける情報の送受信量 を低減し、 統合制御の信頼性を向上させることである。
上述の主要な課題は、 本発明によれば、 制駆動力の自動制御による運転支援を行うための 車輛の目標制駆動制御量を演算する運転支援演算制御手段と、運転者の駆動操作に基づいて 運転者要求駆動制御量を演算し、少なく とも前記速転者要求駆動制御量に基づく最終目標駆 動制御量に基づいて駆動手段を制御する駆動量演算制御手段と、運転者の制動操作に基づい て運転者要求制動制御量を演算し、少なく とも前記運転者要求制動制御量に基づく最終目標 制動制御量に基づいて制動手段を制御する制動量演算制御手段とを有する車輛の統合制御 装置に於いて、前記運転支援演算制御手段の前記目標制駆動制御量は前記駆動量演算制御手 段へ送信され、 前記駆動量演算制御手段は前記目標制駆動制御量と前記運転者要求駆動制御 量とを調停することにより前記最終目標駆動制御量を演算することを特徴とする車輛の統 合制御装置によって達成される。
この構成によれば、制駆動力の自動制御による運転支援を行うための車輛の目標制駆動制 御量を演算する運転支援演算制御手段と、運転者の駆動操作に基づいて運転者要求駆動制御 量を演算し、少なく とも運転者要求駆動制御量に基づく最終目標駆動制御量に基づいて駆動 手段を制御する駆動量演算制御手段と、運転者の制動操作に基づいて運転者要求制動制御量 を演算し、少なく とも運転者要求制動制御量に基づく最終目標制動制御量に基づいて制動手 段を制御する制動量演算制御手段とを有する車輛の統合制御装置に於いて、運転支援演算制 御手段の目標制駆動制御量は駆動量演算制御手段へ送信され、駆動量演算制御手段により 目 標制駆動制御量と運転者要求駆動制御量とが調停されることにより最終目標駆動制御量が 演算されるので、駆動量演算制御手段は目標制駆動制御量及び運転者要求駆動制御量に基づ いて最終目標駆動制御量を演算することができ、制駆動力の自動制御による運転支援を達成 しつつ運転者の駆動操作に基づいて駆動力を制御することができる。
また上記構成によれば、 目標制駆動制御量と運転者要求駆動制御量との調停に必要な情報 が駆動量演算制御手段より運転支援演算制御手段へ送信される必要がないので、運転支援演 算制御手段に於いて目標制駆動制御量と運転者要求駆動制御量とが調停され、運転支援演算 制御手段より駆動量演算制御手段及び制動量演算制御手段へそれぞれ目標駆動制御量及ぴ 目標制動制御量が送信される場合に比して運転支援演算制御手段と駆動量演算制御手段と の間に於ける情報の送受信量を低減することができる。
また上記構成によれば、運転支援演算制御手段若しくは目標制駆動制御量が異常になった 場合には、運転支援演算制御手段より駆動量演算制御手段への目標制駆動制御量の送信を中 止すれば、運転支援演算制御手段若しくは目標制駆動制御量が異常になったことの影響が駆 動量演算制御手段及び制動量演算制御手段の制御に及ぶことを防止することができる。 本発明の一つの特徴によれば、 上記構成に於いて、 前記駆動量演算制御手段は調停後の目 標制駆動制御量を目標駆動制御量と目標制動制御量とに分配し、前記目標制動制御量は前記 駆動量演算制御手段より前記制動量演算制御手段へ送信されるよう構成されることが好ま しい。 この構成によれば、駆動量演算制御手段は調停後の目標制駆動制御量を目標駆動制御量と 目標制動制御量とに分配し、 目標制動制御量は駆動量演算制御手段より制動量演算制御手段 へ送信されるので、駆動量演算制御手段は目標制駆動制御量と運転者要求駆動制御量とを調 停した後の目標制駆動制御量を目標駆動制御量と目標制動制御量とに分配することができ、 制動量演算制御手段は目標制動制御量及び運転者要求制動制御量に基づいて最終目標制動 制御量を演算することができる。
本発明の他の一つの特徴によれば、 上記構成に於いて、 前記制動量演算制御手段は前記運 転者要求制動制御量と前記目標制動制御量とを調停することにより前記最終目標制動制御 量を演算することが好ましい。 この構成によれば、制動量演算制御手段は運転者要求制動制御量と目標制動制御量とを調 停することにより最終目標制動制御量を演算するので、制駆動力の自動制御による運転支援 を達成しつつ運転者の制動操作に基づいて制動力を制御することができる。
本発明の他の一つの特徴によれば、 上記構成に於いて、 前記運転支援演算制御手段は危険 回避のための緊急制動の必要があるときには危険回避目標制動量を演算し、前記危険回避目 標制動量は前記運転支援演算制御手段より前記制動量演算制御手段へ直接送信されること が好ましい。 この構成によれば、運転支援演算制御手段は危険回避のための緊急制動の必要があるとき には危険回避目標制動量を演算し、危険回避目標制動量は運転支援演算制御手段より制動量 演算制御手段へ直接送信されるので、運転支援演算制御手段は危険回避のための緊急制動の 必要があるときには危険回避目標制動量を遅滞なく制動量演算制御手段へ送信することが でき、危険回避目標制動量が駆動量演算制御手段を経て制動量演算制御手段へ送信される場 合に比して、 速やかに危険回避のための緊急制動を行うことができる。
本発明の他の一つの特徴によれば、 上記構成に於いて、 前記制動量演算制御手段は前記運 転者要求制動制御量と前記目標制動制御量と前記危険回避目標制動量とを調停することに より前記最終目標制動制御量を演算することが好ましい。 この構成によれば、制動量演算制御手段は運転者要求制動制御量と目標制動制御量と危険 回避目標制動量とを調停することにより最終目標制動制御量を演算するので、制動量演算制 御手段は運転者要求制動制御量と目標制動制御量と危険回避目標制動量とに基づいて最終 目標制動制御量を演算することができる。
本発明の他の一つの特徴によれば、 上記構成に於いて、 前記制動量演算制御手段は前記運 転支援演算制御手段より前記危険回避目標制動量を受信しているときには前記危険回避目 標制動量を前記最終目標制動制御量とし、前記運転支援演算制御手段より前記危険回避目標 制動量を受信していないときには前記運転者要求制動制御量と前記目標制動制御量とを調 停することにより前記最終目標制動制御量を演算することが好ましい。 この構成によれば、制動量演算制御手段は運転支援演算制御手段より危険回避目標制動量 を受信しているときには危険回避目標制動量を最終目標制動制御量とし、運転支援演算制御 手段より危険回避目標制動量を受信していないときには運転者要求制動制御量と目標制動 制御量とを調停することにより最終目標制動制御量を演算するので、運転支援演算制御手段 は危険回避のための緊急制動の必要がないときには、 目標制駆動制御量及び運転者要求駆動 制御量に基づいて最終目標駆動制御量を演算することができ、制駆動力の自動制御による運 転支援を達成しつつ運転者の駆動操作に基づいて駆動力を制御することができる。 また運転 支援演算制御手段は危険回避のための緊急制動の必要があるときには、確実に危険回避目標 制動量に基づいて最終目標制動制御量を演算し、危険回避のための緊急制動を確実に達成す ることができる。
本発明の他の一つの特徴によれば、 上記構成に於いて、 前記運転支援演算制御手段は運転 支援の制御モードに応じて前記目標制駆動制御量を演算し、前記運転支援の制御モードも前 記運転支援演算制御手段より前記駆動量演算制御手段へ送信されることが好ましい。 この構成によれば、運転支援演算制御手段は運転支援の制御モードに応じて目標制駆動制 御量を演算し、運転支援の制御モードも運転支援演算制御手段より駆動量演算制御手段へ送 信されるので、駆動量演算制御手段は運転支援の制御モードに応じて目標制駆動制御量と運 転者要求駆動制御量とを適正に調停することができる。
本発明の他の一つの特徴によれば、 上記構成に於いて、 前記駆動量演算制御手段より前記 制動量演算制御手段への通信に異常が生じたときには前記運転支援演算制御手段は前記目 標制駆動制御量の演算及び前記駆動量演算制御手段への送信を中止することが好ましい。 この構成によれば、駆動量演算制御手段より制動量演算制御手段への通信に異常が生じた ときには運転支援演算制御手段は目標制駆動制御量の演算及び駆動量演算制御手段への送 信を中止するので、運転支援演算制御手段により目標制駆動制御量が無駄に演算され目標制 駆動制御量が無駄に駆動量演算制御手段へ送信されることを防止すると共に、駆動量演算制 御手段及ぴ制動量演算制御手段は運転者要求制動制御量を考慮しない態様にてそれぞれ少 なく とも運転者要求駆動制御量及び運転者要求制動制御量に基づいて駆動力及ぴ制動力を 制御することができる。
本発明の他の一つの詳細な特徴によれば、 上記構成に於いて、 運転支援は先行車輛と間の 車間距離を一定にするための制駆動力の自動制御であることが好ましい。
本発明の他の一つの詳細な特徴によれば、 上記構成に於いて、 運転支援は先行車輛と間の 車間距離が基準値未満になることを防止するための制駆動力の自動制御であることが好ま しい。
本発明の他の一つの詳細な特徴によれば、 上記構成に於いて、 運転支援は車輛前方の障害 物との衝突を防止するための制駆動力の自動制御であることが好ましい。
本発明の他の一つの詳細な特徴によれば、 上記構成に於いて、 目標駆動制御量も駆動量演 算制御手段より制動量演算制御手段へ送信され、制動量演算制御手段は車輛の安定的な走行 を確保するための補正量にて目標駆動制御量を補正し、捕正後の目標駆動制御量を駆動量演 算制御手段へ送信することが好ましい。
本発明の他の一つの詳細な特徴によれば、 上記構成に於いて、 駆動量演算制御手段は補正 前の目標駆動制御量と捕正後の目標駆動制御量とに基づいて最終目標駆動制御量を演算す ることが好ましい。
本発明の他の一つの詳細な特徴によれば、 上記構成に於いて、 制動量演算制御手段は車輛 の安定的な走行を確保するための補正量にて調停後の目標制動制御量を補正し、補正後の目 標制動制御量に基づいて最終目標制動制御量を演算することが好ましい。
本発明の他の一つの詳細な特徴によれば、 上記構成に於いて、 駆動手段は内燃エンジンと 電動発電機とを備えたハイプリッドシステムを含むことが好ましい。
本発明の他の一つの詳細な特徴によれば、 上記構成に於いて、 電動発電機は回生機能を有 し、制動量演算制御手段は最終目標制動制御量を目標摩擦制動制御量と目標回生制動制御量 とに分配し、 目標回生制動制御量は制動量演算制御手段より駆動量演算制御手段へ送信され ることが好ましい。
本発明の他の一つの詳細な特徴によれば、 上記構成に於いて、 駆動量演算制御手段は最終 目標駆動制御量に基づいて内燃エンジンを制御すると共に、 目標回生制動制御量基づいて電 動発電機を制御することが好ましい。 図面の簡単な説明
図 1は後輪駆動車に適用された本発明による車輛の統合制御装置の第一の実施例を示す 概略構成図である。
図 2は第一の実施例の制御系を示すプロック図である。
図 3は第一の実施例の駆動力制御電子制御装置の第一の調停器による調停制御ルーチン 及び制駆動力分配器による制駆動力の分配制御ルーチンを示すフローチヤ一トである。
図 4は第一の実施例の制動力制御電子制御装置の調停器による調停制御ルーチンを示す フローチヤ一トである。
図 5は第一の実施例の制動力制御電子制御装置の車輛運動補償器による車輛運動補償制 御ルーチンを示すフローチヤ一トである。
図 6は第一の実施例の駆動力制御電子制御装置の第二の調停器による調停制御ルーチン を示すフローチヤ一トである。
図 7はハイプリ ッ ドシステムが搭載された前輪駆動式の車輛に適用された本発明による 車輛の統合制御装置の第二の実施例を示す概略構成図である。
図 8は第二の実施例の制御系を示すプロック図である。 '
発明を実施するための最良の形態
以下に添付の図を参照しつつ、本発明を幾つかの好ましい実施例について詳細に説明する。 第一の実施例 図 1は後輪駆動車に適用された本発明による車輛の統合制御装置の第一の実施例を示す 概略構成図、 図 2は第一の実施例の制御系を示すプロック図である。
図 1に於いて、 1 0はエンジンを示しており、 エンジン 1 0の駆動力はトルクコンバータ
1 2及び歯車式変速機構 1 4を含むォートマチック トランスミッション 1 6を介してプロ ペラシャフト 1 8へ伝達される。 プロペラシャフト 1 8の駆動力はディファレンシャル 2 0 により左後輪車軸 2 2 L及び右後輪車軸 2 2 Rへ伝達され、 これにより駆動輪である左右の後 輪 2 4 RL及び 2 4 RRが回転駆動される。
—方左右の前輪 2 4 FL及び 2 4 FRは従動輪であると共に操舵輪であり、 図 1には示されて いないが、 運転者によるステアリングホイールの転舵に応答して駆動されるラック .アン ド · ピニオン式のパワーステアリング装置によりタイロッドを介して操舵される。
左右の前輪 2 4 FL、 2 4 FR及び左右の後輪 2 4 RL、 2 4 RRの制動力は制動装置 2 6の油圧 回路 2 8により対応するホイールシリンダ 3 O FL、 3 0 FR、 3 0 RL、 3 0 RRの制動圧が制御 されることによって制御される。 図 1には示されていないが、 油圧回路 2 8はオイルリザー バ、 オイルポンプ、 種々の弁装置等を含んでいる。
車輛の制駆動力は統合制御電子制御装置 3 2により制御される。統合制御電子制御装置 3 2は通常時には運転者によるアクセルペダル 3 4の操作やエンジン負荷等に応じてェンジ ン 1 0の出力及びトランスミッシヨン 1 6の変速段を制御すると共に、運転者によるプレー キペダル 3 6の踏み込み操作に応じて油圧回路 2 8を制御し、 また必要に応じて車輛の走行 運動を制御すべくエンジン 1 0の出力及びトランスミッシヨン 1 6の変速段を制御すると 共に、 油圧回路 2 8を制御し、 これにより車輛の制駆動力を制御する。
これ以降統合制御電子制御装置 3 2により実行される制駆動力の統合制御について更に 詳細に説明するが、 これ以降の説明に於いて制駆動力、 駆動力、 制動力は全て車輛の駆動方 向を正とする値であり、従って複数の制動力の比較に於いて小さい方の値が制動の強さとし て大きい値である。
図 2に示されている如く、統合制御電子制御装置 3 2は運転者の運転を支援する運転支援 電子制御装置 4 0と、 車輛の駆動力を制御する駆動力制御電子制御装置 4 2と、 各車輪の駆 動力を制御する制動力制御電子制御装置 4 4とを有している。 尚図 2には詳細に示されてい ないが、 運転支援電子制御装置 4 0、 駆動力制御電子制御装置 4 2、 制動力制御電子制御装 置 4 4はそれぞれ C P Uと R O Mと R AMと入出力ポート装置とを有し、 これらが双方向性 のコモンバスにより互いに接続されたマイク口コンピュータ及び駆動回路よりなっていて よい。
運転支援電子制御装置 4 0にはレーダーの如き車間距離検出センサ 5 0より車輛前方の 先行車輛との間の車間距離 Lを示す信号、 C C Dカメラの如き障害物検出センサ 5 2より車 輛前方の障害物の有無を示す信号等が入力される。 運転支援電子制御装置 4 0は図には示さ れていない車間距離制御のスィッチがオン状態にあるときには、車間距離検出センサ 5 0よ り入力される先行車輛との間の車間距離 L及ぴ車速センサ 5 4より入力される車速 Vに基 づき先行車輛との間の車間距離を所定の範囲内の値にするための目標制駆動力を運転支援 目標制駆動力 F xtdssとして演算する。
また運転支援電子制御装置 4 0は車間距離検出センサ 5 0より入力される先行車輛との 間の車間距離 L及び車速センサ 5 4より入力される車速 Vに基づき、先行車輛との間の車間 距離が車速 Vに応じて定まる基準値よりも小さいときには、補助制動を行い先行車輛との間 の車間距離を基準値以上の安全な車間距離にするための目標制駆動力を運転支援目標制駆 動力 F xtdssとして演算する。
また運転支援電子制御装置 4 0は障害物検出センサ 5 2より入力される車輛前方の障害 物の有無の情報、車間距離検出センサ 5 0より入力される車輛前方の障害物との間の車間距 離 L、 車速センサ 5 4より入力される車速 Vに基づき、 障害物との衝突の虞れを判定し、 障 害物との衝突の虞れがあるときには障害物との衝突を防止するための目標制駆動力 F xbtpc sを運転支援目標制駆動力 F xtdssとして演算する。
更に運転支援電子制御装置 4 0は、上記車間距離制御を行い運転支援目標制駆動力 F xtds sを演算しているときには、 運転者支援の制御モードが車間距離制御であることを示す信号 と共に運転支援目標制駆動力 F xtdssを示す信号を駆動力制御電子制御装置 4 2へ出力し、 上記補助制動制御を行い運転支援目標制駆動力 F xtdssを演算しているときには、 運転者支 援の制御モードが捕助制動制御であることを示す信号と共に運転支援目標制駆動力 F xtdss を示す信号を駆動力制御電子制御装置 4 2へ出力し、上記衝突防止制御を行い運転支援目標 制駆動力 F xtdssを演算しているときには、 運転者支援の制御モードが衝突防止制御である ことを示す衝突防止制御要求フラグ F pcsのオン信号と共に運転支援目標制駆動力 F xtdss を示す信号を制動力制御電子制御装置 4 4へ出力する。
駆動力制御電子制御装置 4 2は第一の調停器 5 6を有し、第一の調停器 5 6にはアクセル 開度センサの如く駆動操作量検出センサ 5 8より運転者の駆動操作量を示す信号も入力さ れる。第一の調停器 5 6は駆動操作量検出センサ 5 8より入力される運転者の駆動操作量に 基づき車輛の運転者要求目標駆動力 F xddtを演算し、運転者支援の制御モードに応じて運転 者要求目標駆動力 F xddtと運転支援目標制駆動力 F xtdssとを調停することにより、 車輛の トータル目標制駆動力 F xdttを演算し、 トータル目標制駆動力 F xdttを示す信号を制駆力動 分配器 6 0へ出力する。 '
制駆動力分配器 6 0は車輛のトータル目標制駆動力 F xdttを車輛の目標駆動力 F xptと車 輛の目標制動力 F xbtとに分配する。 そして制駆動力分配器 6 0は目標駆動力 F xptを示す信 号を第二の調停器 6 2及ぴ制動力制御電子制御装置 4 4の駆動力用車輛運動補償器 6 4へ 出力すると共に、 目標制動力 F xbtを示す信号を制動力制御電子制御装置 4 4の調停器 6 6 へ出力する。
駆動力用車輛運動捕償器 6 4は車輛のコーナリングドラッグをキャンセルして車輛の乗 り心地性を向上させるための車輛運動補償目標駆動力 F xdctを演算する。 そして駆動力用車 輛運動捕償器 6 4は車輛運動補償目標駆動力 F xdctを示す信号を駆動力制御電子制御装置 4 2の第二の調停器 6 2へ出力する。
また車輛運動捕償器 6 4は車輛の挙動安定化又は車輛の挙動悪化防止のための各車輪の 運動制御目標制駆動力 F xvti ( i = fl、 fr、 rl、 rr) を演算し、 各車輪の運動制御目標制駆 動力 F xvtiのうちの駆動力の合計として車輛の運動制御目標駆動力 F xvdtを演算する。 そし て車輛運動補償器 6 4は運動制御目標駆動力 F xvdt及ぴ駆動力制御電子制御装置 4 2の制 駆動分配器 6 0より入力される車輛の目標駆動力 F xptのうちの大きい方の値を車輛運動補 償後の目標駆動力 F xpvtとし、 目標駆動力 F xpvtを示す信号を駆動力制御電子制御装置 4 2 の第二の調停器 6 2へ出力する。
駆動力制御電子制御装置 4 2の第二の調停器 6 2は目標駆動力 F xptと車輛運動補償後の 目標駆動力 F xpvtとを調停して最終目標駆動力 F xpttを演算し、最終目標駆動力 F xpttに車 輛運動捕償目標駆動力 F xdctを加算して最終目標駆動力 F xpttを捕正し、補正後の最終目標 駆動力 F xpttを分配器 6 8へ出力する。
分配器 6 8は補正後の最終目標駆動力 F xpttに基づきエンジン 1 0の目標出力及ぴトラ ンスミッション 1 6の目標変速段を演算し、エンジン 1 0の出力及ぴトランスミッシヨン 1 4の変速段がそれぞれ目標出力及ぴ目標変速段になるよう制御することにより、車輛の駆動 力が補正後の最終目標駆動力 F xpttになるようエンジン 1 0の出力及ぴトランスミッショ ン 1 6を制御する。
制動力制御電子制御装置 4 4の調停器 6 6には制動装置 2 6のマスタシリンダ 7 0内の 圧力を検出する圧力センサ、 ブレーキペダル 3 6の踏力を検出する踏力センサ、 ブレーキぺ ダル 3 6の踏み込みストロークを検出するストロークセンサの如く制動操作量検出センサ
7 2より運転者の制動操作量を示す信号が入力される。調停器 6 6は運転者の制動操作量に 基づき運転者要求制動力 F xdbtを演算する。
調停器 6 6は運転支援電子制御装置 4 0による運転者支援の制御モードが衝突防止制御 でないときには、運転者要求制動力 F xdbtと制駆動力分配器 6 0より入力される目標制動力
F xbtとを調停することにより、 車輛のトータル目標制動力 F xbttを演算し、 運転支援電子 制御装置 4 0による運転者支援の制御モードが衝突防止制御であるときには、運転支援電子 制御装置 4 0より入力される運転支援目標制駆動力 F xtdss (衝突防止目標制動力 F xbtpc s) を車輛のトータル目標制動力 F xbttとする。
調停器 6 6はトータル目標制動力 F xbttを示す信号を制動力用車輛運動補償器 7 4へ出 力し、制動力用車輛運動捕償器 7 4はトータル目標制動力 F xbttを各車輪に配分することに より トータル目標制動力 F xbttに基づき各車輪の目檫制動力 F wbttiを演算する。 車輛運動 補償器 7 4には各車輪に対応して設けられた圧力センサ 7 6 FL〜7 6 RRより各車輪のホイ 一ルシリンダ 3 0 FL〜3 O RRの制動圧 P i ( i = fl、 fr、 rl、 rr) を示す信号が入力される。 制動力用車輛運動補償器 7 4には駆動力用車輛運動補償器 6 4より車輛の挙動安定化又 は車輛の挙動悪化防止のための各車輪の運動制御目標制駆動力 F xvtiを示す信号が入力さ れ、 制動力用車輛運動補償器 7 4は目標制動力 F wbtti及ぴ運動制御目標制駆動力 F xvtiの うちの小さい方の制動力を各車輪の目標制動力 F wbti ( i = fl、 む、 rl、 rr) とし、 目標制 動力 F wbtiに基づき制動装置 2 6の油圧回路 2 8を制御することにより、各車輪の制動力が それぞれ対応する目標制動力 F wbtiになるよう各車輪の制動力を制御する。
尚図には示されていないが、駆動力制御電子制御装置 4 2は運転支援電子制御装置 4 0及 びこれにより演算される運転支援目標制駆動力 F xtdssが正常であるか否かを監視する監視 器を有し、該監視器は運転支援電子制御装置 4 0及びこれにより演算される運転支援目標制 駆動力 F xtdssが異常であると判定したときには、運転支援目標制駆動力 F xtdss及び制御モ ードを送信する通信経路とは別の駆動力制御電子制御装置 4 2と運転支援電子制御装置 4 0との間の通信経路を経て、 又は制動力制御電子制御装置 4 4を経て、 運転支援電子制御装 置 4 0へ運転支援制御及び送信を中止すべき指令信号を出力する。
また制動力制御電子制御装置 4 4は駆動力制御電子制御装置 4 2と制動力制御電子制御 装置 4 4との間の通信が正常であるか否かを監視する監視器を有し、該監視器は動力制御電 子制御装置 4 2と制動力制御電子制御装置 4 4との間の通信が異常であると判定したとき には、 目標制動力 F xbt等を送信する通信経路とは別の駆動力制御電子制御装置 4 2と制動 力制御電子制御装置 4 4との間の通信経路及ぴ駆動力制御電子制御装置 4 2を経て運転支 援電子制御装置 4 0へ、 又は運転支援電子制御装置 4 0へ直接、 運転支援制御及び送信を中 止すべき指令信号を出力する。 尚この監視器の機能は駆動力制御電子制御装置 4 2の監視器 により達成されてもよい。
また制動力制御電子制御装置 4 4の監視器は運転支援電子制御装置 4 0と制動力制御電 子制御装置 4 4との間の通信が正常であるか否かをも監視し、運転支援電子制御装置 4 0と 制動力制御電子制御装置 4 4との間の通信が異常であると判定したときには、 目標制動力 F xtdss等を送信する通信経路とは別の運転支援電子制御装置 4 0と制動力制御電子制御装置 4 4との間の通信経路及び駆動力制御電子制御装置 4 2を経て運転支援電子制御装置 4 0 へ、 運転支援の衝突防止制御及び送信を中止すべき指令信号を出力する。
尚上記異常の何れかが生じたときには、 図には示されていない警報装置が作動され、 車輛 の乗員に対応する異常が発生している旨の警報が発せられることが好ましい。
次に図 3に示されたフローチヤ一トを参照して第一の実施例の駆動力制御電子制御装置 4 2の第一の調停器 5 6による調停制御ルーチン及び制駆動力分配器 6 0による制駆動力 の分配制御ルーチンについて説明する。 尚図 3に於いて、 ステップ 1 0〜7 0が第一の調停 器 5 6による調停制御ル一チンであり、 ステップ 1 0 0〜 1 2 0が制駆動力分配器 6 0によ る制駆動力の分配制御ル一チンである。
まずステップ 1 0に於いては駆動操作量検出センサ 5 8により検出された運転者の駆動 操作量を示す信号の読み込みが行われると共に、運転者の駆動操作量に基づき車輛の運転者 要求目標制駆動力 F xddtが演算され、ステップ 2 0に於いては運転支援電子制御装置.4 0よ り運転者支援の制御モード及び運転支援目標制駆動力 F xtdssを示す信号の読み込みが行わ れる。 .
ステップ 3 0に於いては運転者支援の制御モードが車間距離制御であるか否かの判別が 行われ、 肯定判別が行われたときにはステップ 4 0に於いて車輛のトータル目標制駆動力 F xdtt が運転者要求目標制駆動力 F xddt及び運転支援目標制駆動力 F xtdss のうちの大きい 方の値に設定され、 否定判別が行われたときにはステップ 5 0へ進む。
ステップ 5 0に於いては運転者支援の制御モードが補助制動制御であるか否かの判別が 行われ、肯定判別が行われたときにはステップ 6 0に於いて車輛のトータル目標制駆動力 F xdtt が運転者要求目標制駆動力 F xddt及ぴ運転支援目標制駆動力 F xtdss のうちの小さい 方の値に設定され、 否定判別が行われたときにはステップ 6 0へ進む。
ステップ 7 0に於いては運転者支援の制御モードが衝突防止制御であるか否かの判別が 行われ、肯定判別が行われたときにはステップ 8 0に於いて車輛のトータル目標制駆動力 F xdttがエンジン 1 0及びトランスミッシヨン 1 6の機械的発生駆動力の最小値 F xdminに設 定され、否定判別が行われたときにはステップ 9 0に於いて車輛のトータル目標制駆動力 F xdttが運転者要求目標制駆動力 F xddtに設定される。
ステップ 1 0 0に於いては車輛のトータル目標制駆動力 F xdtt がエンジン 1 0及びトラ ンスミッション 1 6の機械的発生駆動力の最小値 F xdminよりも大きいか否かの判別が行わ れ、 肯定判別が行われたときにはステップ 1 1 0に於いて車輛の目標駆動力 F xptが車輛の トータル目標制駆動力 F xdttに設定されると共に、車輛の目標制動力 F xbtが 0に設定され、 否定判別が行われたときにはステップ 1 2 0に於いて車輛の目標駆動力 F xptがエンジン 1 0及びトランスミッシヨン 1 6の機械的発生駆動力の最小値 F xdminに設定されると共に、 車輛の目標制動力 F xbtが車輛のトータル目標制駆動力 F xdttより最小値 F xdminが減算さ れた値 F xdtt— F xdminに設定される。
ステップ 1 3 0に於いては目標駆動力 F xptを示す信号が第二の調停器 6 2及び制動力制 御電子制御装置 4 4の車輛運動状態補償器 6 4へ出力されると共に、 目標制動力 F xbtを示 す信号が制動力制御電子制御装置 4 4の調停器 6 6へ出力される。
次に図 4.に示されたフローチャートを参照して第一の実施例の制動力制御電子制御装置
4 4の調停器 6 6による調停制御ルーチンについて説明する。 まずステップ 2 1 0に於いては制動操作量検出センサ 7 0により検出された運転者の制 動操作量を示す信号の読み込みが行われると共に、運転者の制動操作量に基づき運転者要求 制動力 F xdbtが演算され、ステップ 2 2 0に於いては駆動力制御電子制御装置 4 2の制駆動 力分配器 6 0より車輛の目標制動力 F xbtを示す信号の読み込みが行われ、 ステップ 2 3 0 に於いては衝突防止制御要求フラグ F pcs信号及び運転支援目標制駆動力 F xtdss を示す信 号の読み込みが行われる。
ステップ 2 4 0に於いては衝突防止制御要求フラグ F pcsがオンであるか否かの判別が行 われ、 否定判別が行われたときにはステップ 2 5 0に於いて車輛のトータル目標制動力 F xbtt が運転者要求制動力 F xdbt 及ぴ車輛の目標制動力 F xbt のうちの小さい方の値に設定 され、 肯定判別が行われたときにはステップ 2 6 0に於いて車輛のトータル目標制動力 F xbttが衝突防止制御の運転支援目標制駆動力 F xtdssに設定される。
ステップ 2 7 0に於いては図には示されていないが駆動力制御電子制御装置 4 2により 演算される変速ショックを制御するための目標制動力 F xsht を示す信号の読み込みが行わ れると共に、 車輛のトータル目標制動力 F xbtt に目標駆動力 F xsht が加算されることによ り、 捕正後の車輛のトータル目標制動力 F xbttが演算される。
次に図 5に示されたフローチャートを参照して第一の実施例の制動力制御電子制御装置
4 4の制動力用車輛運動捕償器 7 4による車輛運動補償制御ルーチンについて説明する。 まずステップ 3 1 0に於いてはアンチスピン制御、 アンチドリフトァゥト制御、 タツクイ ン制御の如く、車輛の挙動安定化又は車輛の挙動悪化防止のための車輛の目標前後力 F vsct 及ぴ目標ョーモ一メント Mvsctが当技術分野に於いて公知の要領にて演算されると共に、車 輛の目標前後力 F vsct 及び目標ョーモーメント Mvsct を達成するための各車輪の挙動制御 目標制駆動力 F xvscti ( i = fl、 fr、 rl、 rr) が演算される。
ステップ 3 3 0に於いては車輪の駆動スリップ又は制動スリ ップを低減して車輛の挙動 悪化を防止するための各車輪のスリ ップ低減目標制駆動力 F xslti ( i = fl、 fr、 rl、 rr) が演算され、ステップ 3 4 0に於いては各車輪について挙動制御目標制駆動力 F xvscti及ぴ スリップ低減目標制駆動力 F xslti のうちの小さい方の値が車輛運動捕償目標制駆動力 F xdcti ( i = fl、 fr、 rl、 rr) として演算される。
ステップ 3 5 0に於いては制動力の場合を 0として車輛運動補償目標制駆動力 F xdctiの 駆動力の和が車輛の暫定車輛運動補償目標駆動力 F xdctp として演算され、 ステップ 3 6 0 に於いては車輛運動補償目標駆動力 F xdctが車輛の暫定車輛運動補償目標駆動力 F xdct 及 ぴ駆動力制御電子制御装置 4 2の制駆動力分配器 6 0より入力される目標駆動力 F xptのう ちの大きい方の値に設定される。
次に図 6に示されたフローチャートを参照して第一の実施例の駆動力制御電子制御装置 4 2の第二の調停器 6 6による調停制御ルーチンについて説明する。
まずステップ 4 1 0に於いては制動力制御電子制御装置 4 4の制動力用車輛運動補償器 7 4より車輛運動捕償後の目標駆動力 F xpvtを示す信号の読み込みが行われ、ステップ 4 2 0に於いては目標駆動力 F xpt及び車輛運動補償後の目標駆動力 F xpvtに基づきひを正の定 数として、 F xpt—ひ 、 F xdct, F xpt + αのうちの中間の値として最終目標駆動力 F xptt が演算される。 尚 αは制動力制御電子制御装置 4 4の異常に起因して最終目標駆動力 F xptt が異常な値になることを防止するためのガード値である。
ステップ 4 3 0に於いては制動力制御電子制御装置 4 4の制動力用車輛運動捕償器 7 4 より車輛運動補償目標駆動力 F xdctを示す信号の読み込みが行われ、最終目標駆動力 F xptt に車輛運動捕償目標駆動力 F xdct が加算されることにより捕正後の最終目標駆動力 F xptt が演算され、 補正後の最終目標駆動力 F xpttを示す信号が分配器 6 8へ出力される。
かく して図示の第一の実施例によれば、運転支援電子制御装置 4 0により運転支援目標制 駆動力 F xtdssが演算されると共に駆動力制御電子制御装置 4 2の第一の調停器 5 6へ送信 され、第一の調停器 5 6により運転者の駆動操作量に基づく車輛の運転者要求目標制駆動力 F xddtと運転支援目標制駆動力 F xtdssとが調停されることにより車輛のトータル目標制駆 動力 F xdtt が演算され、 制駆動力分配器 6 0により車輛のトータル目標制駆動力 F xdtt が 車輛の目標駆動力 F xptと車輛の目標制動力 F xbtとに分配される。
そして制動力制御電子制御装置 4 4の駆動力用車輛運動補償器 6 4により車輛の乗り心 地性を向上させるための車輛運動補償目標駆動力 F xdct 及び車輛の挙動安定化又は車輛の 挙動悪化防止のための車輛運動補償後の目標駆動力 F xpvが演算され、 駆動力制御電子制御 装置 4 2の第二の調停器 6 2により目標駆動力 F xpt と車輛運動捕償後の目標駆動力 F xpvt とが調停されることにより最終目標駆動力 F xptt が演算されると共に、 最終目標駆動力 F xpttに車輛運動捕償目標駆動力 F xdctが加算されることにより最終目標駆動力 F xpttが補 正され、分配器 6 8により車輛の駆動力が補正後の最終目標駆動力 F xpttになるようェンジ ン 1 0の出力及ぴトランスミッション 1 6が制御される。
また車輛の目標制動力 F xbtが制動力制御電子制御装置 4 4の調停器 6 6へ送信され、 調 停器 6 6により運転者の制動操作量に基づく運転者要求制動力 F xdbtと目標制動力 F xbtと が調停されることにより車輛のトータル目標制動力 F xbttが演算され、車輛の挙動安定化又 は車輛の挙動悪化防止のための車輛運動補償後の目標駆動力 F xpvを加味して車輛のトータ ル目標制動力 F xbtt に基づき各車輪の目標制動力 F wbti が演算され、 各車輪の制動力がそ れぞれ対応する目標制動力 F wbtiになるよう制動装置 2 6が制御される。
従って図示の第一の実施例によれば、 運転支援の目標制駆動力 F xtdss及び運転者要求目 標駆動力 F xddt に基づいて最終目標駆動力 F xptt を演算すると共に、 運転支援の目標制駆 動力 F xtdss及び運転者要求目標制動力 F xdbt に基づいて各車輪の目標制動力 F wbti を演 算することができ、 これにより制駆動力の自動制御による運転支援を達成しつつ運転者の制 駆動操作に基づいて各車輪の制駆動力を制御することができる。
また図示の第一の実施例によれば、運転者要求目標制駆動力 F xddtと運転支援目標制駆動 力 F xtdss との調停や運転支援の目標制駆動力 F xtdss と運転者要求目標駆動力 F xddt との 調停に必要な情報が駆動力制御電子制御装置 4 2及び制動力制御電子制御装置 4 4より運 転支援電子制御装置 4 0へ送信される必要がないので、運転支援電子制御装置 4 0に於いて 上記目標値が調停され、運転支援電子制御装置 4 0より駆動力制御電子制御装置 4 2及び制 動力制御電子制御装置 4 4へそれぞれ目標駆動力及び目標制動力が送信される場合に比し て運転支援電子制御装置 4 0と駆動力制御電子制御装置 4 2及ぴ制動力制御電子制御装置 4 4との間に於ける情報の送受信量を確実に低減することができる。
また図示の第一の実施例によれば、運転支援電子制御装置 4 0若しくはその運転支援目標 制駆動力 F xtdssが異常になった場合には、 運転支援電子制御装置 4 0より駆動力制御電子 制御装置 4 2への運転支援目標制駆動力 F xtdssの送信を中止すれば、 運転支援電子制御装 置 4 0若しくはその運転支援目標制駆動力 F xtdssが異常になったことの影響が駆動力制御 電子制御装置 4 2及び制動力制御電子制御装置 4 4の制御に及ぶことを確実に防止するこ とができる。
同様に駆動力制御電子制御装置 4 2若しくは車輛の目標制動力 F xbtが異常になった場合 には、 駆動力制御電子制御装置 4 2より制動力制御電子制御装置 4 4への目標制動力 F xbt の送信を中止すれば、 駆動力制御電子制御装置 4 2若しくは車輛の目標制動力 F xbtが異常 になったことの影響が制動力制御電子制御装置 4 4の制御に及ぶことを確実に防止するこ とができる。
特に図示の第一の実施例によれば、運転支援電子制御装置 4 0が衝突防止制御を行い運転 支援目標制駆動力 F xtdssを演算しているときには、 運転者支援の制御モードが衝突防止制 御であることを示す衝突防止制御要求フラグ F pcsのオン信号と共に運転支援目標制駆動力 F xtdssを示す信号が制動力制御電子制御装置 4 4へ直接送信され、 制動力制御電子制御装 置 4 4の調停器 6 6は衝突防止目標制動力 F xbtpcs を車輛のトータル目標制動力 F xbtt と するので、 衝突防止のための緊急制動の必要があるときには衝突防止目標制動力 F xbtpcs を遅滞なく制動力制御電子制御装置 4 4の調停器 6 6へ送信することができ、衝突防止目標 制動力 F xbtpcsも運転支援目標制駆動力 F xtdssとして駆動力制御電子制御装置 4 2を経て 制動力制御電子制御装置 4 4へ送信される場合に比して、速やかに衝突防止の緊急制動を行 うことができる。
また図示の第一の実施例によれば、運転支援電子制御装置 4 0より駆動力制御電子制御装 置 4 2の第一の調停器 5 6へ運転支援の制御モードも送信され、第一の調停器 5 6は運転者 支援の制御モードに応じて運転者要求目標駆動力 F xddtと運転支援目標制駆動力 F xtdssと を調停するので、運転者要求目標駆動力 F xddtと運転支援目標制駆動力 F xtdss とを運転支 援電子制御装置 4 0による運転者支援の制御モードに応じて適正に調停することができる。
第二の実施例 図 7はハイプリ ッ ドシステムが搭載された前輪駆動式の車輛に適用された本発明による 車輛の統合制御装置の第二の実施例を示す概略構成図、 図 8は第二の実施例の制御系を示す ブロック図である。 尚図 7及び図 8に於いて、 図 7及び図 8に示された部材と同一の部材に は図 7及び図 8に於いて付された符号と同一の符号が付されている。
図 7に於いて、 1 1 0は前輪を駆動するハイプリッドシステムを示しており、 ハイプリッ ドシステム 1 1 0はガソリンエンジン 1 1 2と電動発電機 1 1 4とを含んでいる。 ガソリン エンジン 1 1 2の出力軸 1 1 6はクラッチを内蔵する無段変速機 1 1 8の入力軸に連結さ れており、無段変速機 1 1 8の入力軸は電動発電機 1 1 4の出力軸 1 2 0にも連結されてい る。無段変速機 1 1 8の出力軸 1 1 9の回転はフロントディファレンシャル 1 2 2を介して 左右前輪用車軸 1 2 4 FL及び 1 2 4 FRへ伝達され、 これにより左右の前輪 2 4 FL及び 2 4 FRが回転駆動される。
ハイプリ ッ ドシステム 1 1 0のガソリンエンジン 1 1 2及ぴ電動発電機 1 1 4は統合制 御電子制御装置 1 2 6により運転者によるアクセルペダル 3 4の踏み込み量及ぴ車輛の走 行状況に応じて制御される。 また電動発電機 1 1 4は前輪用回生制動装置 1 2 8の発電機と しても機能し、 回生発電機としての機能 (回生制動) も統合制御電子制御装置 1 2 6により 制御される。
特に図示の実施例に於いては、ハイプリッドシステム 1 1 0は図には示されていないシフ トレバーが Dレンジにある通常走行時にはガソリンエンジン 1 1 2又はガソリンエンジン
1 1 2と電動発電機 1 1 4とにより駆動力又はエンジンブレーキ力を発生し (通常運転モー ド) 、 シフトレパーが Dレンジにあるが負荷が低いときには電動発電機 1 1 4のみにより駆 動力を発生し (電気自動車モード) 、 シフトレバーが Bレンジにあるときにもガソリンェン ジン 1 1 2と電動発電機 1 1 4とにより駆動力又はエンジンブレーキ力を癸生するが、 その 場合のエンジンブレーキ力は Dレンジの場合よりも高く (エンジンプレーキモード) 、 シフ トレパーが Dレンジにあり運転者によりブレーキペダル 1 3 4が踏み込まれたときにも電 動発電機 1 1 4は回生発電機として機能する。 左右の前輪 2 4 Fレ 2 4 FR及ぴ左右の後輪 2 4 RL、 2 4 RRの摩擦制動力は摩擦制動装置 2 6の油圧回路 2 8により対応するホイールシリンダ 3 O FL、 3 0 FR、 3 0 RL、 3 0 RRの制 動圧が制御されることによって制御される。 図には示されていないが、 油圧回路 2 8はリザ ーバ、 オイルポンプ、 種々の弁装置等を含み、 各ホイールシリンダの制動圧力は通常時には 運転者によるブレーキペダル 3 6の踏み込み量に応じて統合制御電子制御装置 1 2 6によ り制御される。
図 8に示されている如く、統合制御電子制御装置 1 2 6は運転者の運転を支援する運転支 援電子制御装置 4 0と、 車輛の駆動力を制御する駆動力制御電子制御装置 4 2と、 各車輪の 駆動力を制御する制動力制御電子制御装置 4 4とを有している。 尚図 8には詳細に示されて いないが、 運転支援電子制御装置 4 0、 駆動力制御電子制御装置 4 2、 制動力制御電子制御 装置 4 4はそれぞれ C P Uと R O Mと R AMと入出力ポート装置とを有し、 これらが双方向 性のコモンバスにより互いに接続されたマイク口コンピュータ及び駆動回路よりなってい てよい。
運転支援電子制御装置 4 0は上述の第一の実施例に於ける運転支援電子制御装置 4 0と 同様に機能し、 車間距離制御を行い運転支援目標制駆動力 F xtdssを演算しているときには、 運転者支援の制御モードが車間距離制御であることを示す信号と共に運転支援目標制駆動 力 F xtdssを示す信号を駆動力制御電子制御装置 4 2へ出力し、 上記補助制動制御を行い運 転支援目標制駆動力 F xtdssを演算しているときには、 運転者支援の制御モードが補助制動 制御であることを示す信号と共に運転支援目標制駆動力 F xtdssを示す信号を駆動力制御電 子制御装置 4 2へ出力し、 上記衝突防止制御を行い運転支援目標制駆動力 F xtdssを演算し ているときには、運転者支援の制御モードが衝突防止制御であることを示す衝突防止制御要 求フラグ F pcsのオン信号と共に運転支援目標制駆動力 F xtdssを示す信号を制動力制御電 子制御装置 4 4へ出力する。
駆動力制御電子制御装置 4 2は第一の調停器 5 6、 制駆動トルク分配器 8 0、 第二の調停 器 6 2、 回生判断器 8 2を有し、 第一の調停器 5 6は上述の第一の実施例に於ける第一の調 停器 5 6と同様、駆動操作量検出センサ 5 8より入力される運転者の駆動操作量に基づき車 輛の運転者要求目標制駆動力 F xddtを演算し、第一の調停器 5 6は運転者要求目標制駆動力 F xddtと運転支援目標制駆動力 F xtdssとを調停することにより、 車輛のトータル目標制駆 動力 F xdttを演算する。 そして第一の調停器 5 6はトータル目標制駆動力 F xdttに基づき無
7 - 段変速機 1 1 8の出力軸 1 1 9に於ける目標制駆動トルクに相当する値として車輛のト一 タル目標制駆動トルク Txdttを演算し、 トーダル目標制駆動トルク T xdttを示す信号を制駆 動トルク分配器 8 0へ出力する。
制駆動トルク分配器 8 0は車輛のトータル目標制駆動トルク T xdttを車輛の目標駆動ト ルク T xptと車輛の目標制動トルク Txbtとに分配する。 そして制駆動トルク分配器 8 0は目 標駆動トルク T xptを示す信号を第二の調停器 6 2及ぴ制動力制御電子制御装置 4 4の車輛 運動状態捕償器 6 4へ出力すると共に、 目標制動トルク T xbtを示す信号を制動力制御電子 制御装置 4 4の調停器 6 6へ出力する。
駆動力用車輛運動補償器 6 4は車輛のコーナリングドラッグをキャンセルして車輛の乗 り心地性を向上させるための車輛運動捕償目標駆動トルク T xdctを演算する。 そして駆動力 用車輛運動補償器 6 4は車輛運動捕償目標駆動トルク T xdctを示す信号を駆動力制御電子 制御装置 4 2の第二の調停器 6 2へ出力する。
また車輛運動捕償器 6 4は車輛の挙動安定化又は車輛の挙動悪化防止のための各車輪の 運動制御目標制駆動トルク T xvti ( i = fl、 fr、 rl、 rr) を演算し、 各車輪の運動制御目標 制駆動トルク T xvtiのうちの駆動トルクの合計として車輛の運動制御目標駆動トルク T xvd tを演算する。 そして車輛運動補償器 6 4は運動制御目標駆動トルク T xvdt及び駆動力制御 電子制御装置 4 2の制駆動分配器 6 0より入力される車輛の目標駆動トルク T xptのうちの 大きい方の値を車輛運動補償後の目標駆動トルク T xpvtとし、 目標駆動トルク Txpvtを示す 信号を駆動力制御電子制御装置 4 2の第二の調停器 6 2へ出力する。
駆動力制御電子制御装置 4 2の第二の調停器 6 2は目標駆動トルク T xptと車輛運動捕償 後の目標駆動トルク T xpvtとを調停して最終目標駆動トルク T xpttを演算し、最終目標駆動 トルク T xpttに車輛運動捕償目標駆動トルク T xdctを加算して最終目標駆動トルク T xptt を捕正し、補正後の最終目標駆動トルク T xpttに基づきガソリンエンジン 1 1 2及び電動発 電機 1 1 4の目標出力及ぴ無段変速機 1 1 8の目標変速比を演算し、 ガソリンエンジン 1 1 2及び電動発電機 1 1 4の出力がそれぞれ対応する目標出力になると共に、無段変速機 1 1 8の変速比が目標変速比になるよう制御することにより、車輛の駆動力が捕正後の最終目標 駆動トルク T xpttになるようハイプリッドシステム 1 1 0を制御する。
制動力制御電子制御装置 4 4の調停器 6 6には制動装置 2 6のマスタシリンダ 7 0内の 圧力を検出する圧力センサ、 ブレーキペダル 3 6の踏力を検出する踏力センサ、 プレーキぺ ダル 3 6の踏み込みス トロークを検出するストロークセンサの如く制動操作量検出センサ 72より運転者の制動操作量を示す信号が入力される。調停器 6 6は運転者の制動操作量に 基づき運転者要求制動トルク Txdbtを演算する。
調停器 6 6は運転支援電子制御装置 40による運転者支援の制御モ一ドが衝突防止制御 でないときには、運転者要求制動トルク Txdbtと制駆動力分配器 60より入力される目標制 動トルク Txbtとを調停することにより、 車輛のトータル目標制動トルク Txbttを演算し、 運転支援電子制御装置 40による運転者支援の制御モードが衝突防止制御であるときには、 運転支援電子制御装置 40より入力される衝突防止目標制動トルク Txbtpcsを車輛のトー タル目標制動トルク Txbttとする。
調停器 6 6はトータル目標制動トルク Txbttを示す信号を制動力用車輛運動補償器 74 へ出力し、制動力用車輛運動補償器 74はトータル目標制動トルク Txbttを各車輪に配分す ることにより トータル目標制動トルク Txbttに基づき各車輪の目標制動力 Fwbttiを演算す る。車輛運動捕償器 74には各車輪に対応して設けられた圧力センサ 76FL〜76RRより各 車輪のホイールシリンダ 3 OFL〜 3 ORRの制動圧 Pi ( i =fl、 fr、 rl、 rr) を示す信号が 入力される。
制動力用車輛運動補償器 74には駆動力用車輛運動捕償器 64より車輛の挙動安定化又 は車輛の挙動悪化防止のための各車輪の運動制御目標制駆動力 Fxvtiを示す信号が入力さ れ、 制動力用車輛運動捕償器 74は目標制動力 Fwbtti及び運動制御目標制駆動力 Fxvtiの うちの小さい方の制動力を各車輪の目標制動力 Fwbti ( i =fl、 fr、 rl、 rr) とし、 目標制 動力 F wbtiを示す信号を制動力分配器 84へ出力する。
制動力分配器 84は左右前輪の目標制動力 Fwbtfl、 Fwbtfrに基づき左右前輪の目標回生 制動力 Frwbtfを演算し、 目標回生制動力 Frwb1;fを示す信号を駆動力制御電子制御装置 42 の回生判断器 8 2へ出力する。制動力分配器 84には回生判断器 8 2より左右前輪の実際の 回生制動力 Frwbafを示す信号が入力され、制動力分配器 84は左右前輪の目標制動力 F wbt fl、 Fwbtfrより FrwbafZSを減算することにより左右前輪の目標摩擦制動力 Ffwbtfl、 F fwbtfrを演算し、 また左右後輪の目標制動力 Fwbtrl、 F wbtrrをそれぞれ左右後輪の目標摩 擦制動力 Ffwbtrl、 Ffwbtrrとする。
回生判断器 82は左右前輪の回生制動力が左右前輪の目標回生制動力 Frwb1;fになるよう、 目標回生制動力 Frwbtfに基づきハイプリッドシステム 1 1 0の電動発電機 1 14を制御し、 制動力分配器 84は摩擦制動装置 26の油圧回路 28を制御することにより、各車輪の摩擦 制動力がそれぞれ対応する目標摩擦制動力 Ffwbtiになるよう制御する。 かく して図示の第二の実施例によれば、車輛の駆動手段がハイプリッドシステムである場 合にも上述の第一の実施例の場合と同様の作用効果を得ることができ、 またハイプリッドシ ステムの電動発電機による回生制動を有効に利用して各車輪の制動力を制御することがで きる。
以上に於いては本発明を特定の実施例について詳細に説明したが、本発明は上述の実施例 に限定されるものではなく、本発明の範囲内にて他の種々の実施例が可能であることは当業 者にとって明らかであろう。
例えば上述の各実施例に於いては、運転支援電子制御装置 4 0よる運転支援の制御モ一ド は先行車輛との間の車間距離を所定の範囲内の値にするための車間距離制御、先行車輛との 間の車間距離を基準値以上の安全な車間距離にするための補助制動制御、 障害物との衝突を 防止するための衝突防止制御であるが、運転支援の制御モードは車輛の制駆動利欲の制御に より運転者の運転を支援するものである限り、 図示の制御モードに限定されるものではなく、 また上記運転支援の制御モードの何れかが省略されてもよい。
また上述の第一の実施例に於いては、 車輛は後輪駆動車であるが、 本発明の統合制御装置 は前輪駆動車や四輪駆動車に適用されてもよい。 同様に上述の第二の実施例に於いては、 車 輛はハイプリッドシステムにより前輪が駆動される前輪駆動車であるが、ハイプリッドシス テムにより後輪が駆動される後輪駆動車やハイプリッ ドシステムにより前輪が駆動され捕 助の電動発電機により後輪が駆動される四輪駆動車やハイプリ ッ ドシステムにより前輪及 び後輪が駆動される四輪駆動車に適用されてもよい。
更に上述の第二の実施例に於いては、 回生判断器 8 2と制動力分配器 8 4との間にて授受 が行われる制御量は制動力であるが、例えばハイプリッドシステムの出力軸に於ける制動ト ノレクであってもよい。

Claims

請求の範囲
1 . 制駆動力の自動制御による運転支援を行うための車輛の目標制駆動制御量を演算する運 転支援演算制御手段と、 運転者の駆動操作に基づいて運転者要求駆動制御量を演算し、 少な く とも前記運転者要求駆動制御量に基づく最終目標駆動制御量に基づいて駆動手段を制御 する駆動量演算制御手段と、 運転者の制動操作に基づいて運転者要求制動制御量を演算し、 少なく とも前記運転者要求制動制御量に基づく最終目標制動制御量に基づいて制動手段を 制御する制動量演算制御手段とを有する車輛の統合制御装置に於いて、前記運転支援演算制 御手段の前記目標制駆動制御量は前記駆動量演算制御手段へ送信され、前記駆動量演算制御 手段は前記目標制駆動制御量と前記運転者要求駆動制御量とを調停することにより前記最 終目標駆動制御量を演算することを特徴とする車輛の統合制御装置。
2 . 前記駆動量演算制御手段は調停後の目標制駆動制御量を目標駆動制御量と目標制動制御 量とに分配し、前記目標制動制御量は前記駆動量演算制御手段より前記制動量演算制御手段 送信されることを特徴とする請求項 1に記載の車輛の統合制御装置。
3 . 前記制動量演算制御手段は前記運転者要求制動制御量と前記目標制動制御量とを調停す ることにより前記最終目標制動制御量を演算することを特徴とする請求項 2に記載の車輛 の統合制御装置。
4 . 前記運転支援演算制御手段は危険回避のための緊急制動の必要があるときには危険回避 目標制動量を演算し、前記危険回避目標制動量は前記運転支援演算制御手段より前記制動量 演算制御手段へ直接送信されることを特徴とする請求項 1乃至 3に記載の車輛の統合制御 装置。
5 . 前記制動量演算制御手段は前記運転者要求制動制御量と前記目標制動制御量と前記危険 回避目標制動量とを調停することにより前記最終目標制動制御量を演算することを特徴と する請求項 4に記載の車輛の統合制御装置。
6 . 前記制動量演算制御手段は前記運転支援演算制御手段より前記危険回避目標制動量を受 信しているときには前記危険回避目標制動量を前記最終目標制動制御量とし、前記運転支援 演算制御手段より前記危険回避目標制動量を受信していないときには前記運転者要求制動 制御量と前記目標制動制御量とを調停することにより前記最終目標制動制御量を演算する ことを特徴とする請求項 5に記載の車輛の統合制御装置。
7 . 前記運転支援演算制御手段は運転支援の制御モードに応じて前記目標制駆動制御量を演 算し、前記運転支援の制御モ一ドも前記運転支援演算制御手段より前記駆動量演算制御手段 へ送信されることを特徴とする請求項 1乃至 6に記載の車輛の統合制御装置。
8 . 前記駆動量演算制御手段より前記制動量演算制御手段への通信に異常が生じたときには 前記運転支援演算制御手段は前記目標制駆動制御量の演算及び前記駆動量演算制御手段へ の送信を中止することを特徴とする請求項 1乃至 7に記載の車輛の統合制御装置。
9 . 前記運転支援は先行車輛と間の車間距離を一定にするための制駆動力の自動制御である ことを特徴とする請求項 1乃至 8に記載の車輛の統合制御装置。
1 0 . 前記運転支援は先行車輛と間の車間距離が基準値未満になることを防止するための制 駆動力の自動制御であることを特徴とする請求項 1乃至 8に記載の車輛の統合制御装置。
1 1 . 前記運転支援は車輛前方の障害物との衝突を防止するための制駆動力の自動制御であ ることを特徴とする請求項 1乃至 8に記載の車輛の統合制御装置。
1 2 . 前記目標駆動制御量も前記駆動量演算制御手段より前記制動量演算制御手段へ送信さ れ、前記制動量演算制御手段は車輛の安定的な走行を確保するための補正量にて前記目標駆 動制御量を補正し、捕正後の前記目標駆動制御量を前記駆動量演算制御手段へ送信すること を特徴とする請求項 2乃至 1 1に記載の車輛の統合制御装置。 .
1 3 . 前記駆動量演算制御手段は捕正前の前記目標駆動制御量と捕正後の前記目標駆動制御 量とに基づいて最終目標駆動制御量を演算することを特徴とする請求項 1 2に記載の車輛 の統合制御装置。
1 4 .前記制動量演算制御手段は車輛の安定的な走行を確保するための捕正量にて調停後の 前記目標制動制御量を補正し、補正後の前記目標制動制御量に基づいて最終目標制動制御量 を演算することを特徴とする請求項 3乃至 1 3に記載の車輛の統合制御装置。
1 5 . 前記駆動手段は内燃エンジンと電動発電機とを備えたハイプリッドシステムを含むこ とを特徴とする請求項 3乃至 1 4に記載の車輛の統合制御装置。
1 6 . 前記電動発電機は回生機能を有し、 前記制動量演算制御手段は最終目標制動制御量を 目標摩擦制動制御量と目標回生制動制御量とに分配し、前記目標回生制動制御量は前記制動 量演算制御手段より前記駆動量演算制御手段へ送信されることを特徴とする請求項 1 5に 記載の車輛の統合制御装置。
1 7 .前記駆動量演算制御手段は前記最終目標駆動制御量に基づいて前記内燃エンジンを制 御すると共に、前記目標回生制動制御量基づいて前記電動発電機を制御することを特徴とす る請求項 1 6に記載の車輛の統合制御装置。
PCT/JP2006/300312 2005-01-05 2006-01-05 半導体装置用ボンディングワイヤ WO2006073206A1 (ja)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123597A (ja) * 2005-10-28 2007-05-17 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
EP2221861A1 (en) * 2007-07-24 2010-08-25 Nippon Steel Chemical Co., Ltd. Semiconductor device bonding wire and wire bonding method
WO2010109693A1 (ja) * 2009-03-23 2010-09-30 田中電子工業株式会社 ボールボンディング用被覆銅ワイヤ
US20110089549A1 (en) * 2008-10-10 2011-04-21 Sumitomo Bakelite Co., Ltd Semiconductor device
CN102422404A (zh) * 2009-07-30 2012-04-18 新日铁高新材料株式会社 半导体用接合线
TWI671412B (zh) * 2015-12-15 2019-09-11 日商日鐵化學材料股份有限公司 半導體裝置用接合線
CN114318051A (zh) * 2022-01-08 2022-04-12 烟台一诺电子材料有限公司 一种不同材质的多层环状键合丝及其制备方法

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006023167B3 (de) * 2006-05-17 2007-12-13 Infineon Technologies Ag Bonddraht, Herstellungsverfahren für einen Bonddraht und Wedge-Wedge-Drahtbondverfahren
US8610291B2 (en) * 2006-08-31 2013-12-17 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
JP4941901B2 (ja) * 2007-01-15 2012-05-30 新日鉄マテリアルズ株式会社 ボンディングワイヤの接合構造
CN101009409A (zh) * 2007-01-26 2007-08-01 番禺得意精密电子工业有限公司 使端子可防虹吸的方法及使用该方法制造的端子
JP5286893B2 (ja) * 2007-04-27 2013-09-11 日立化成株式会社 接続端子、接続端子を用いた半導体パッケージ及び半導体パッケージの製造方法
EP2239766B1 (en) * 2008-01-25 2013-03-20 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor device
KR101099233B1 (ko) * 2008-07-11 2011-12-27 가부시키가이샤 닛데쓰 마이크로 메탈 본딩 와이어의 접합 구조
DE102008043361A1 (de) * 2008-10-31 2010-05-06 Micro Systems Engineering Gmbh Anschlussdraht und Verfahren zur Herstellung eines solchen
US8357998B2 (en) * 2009-02-09 2013-01-22 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
TW201039420A (en) * 2009-04-17 2010-11-01 Unimicron Technology Corp Chip package structure and manufacturing method thereof
WO2011118009A1 (ja) * 2010-03-25 2011-09-29 田中電子工業株式会社 高純度Cuボンディングワイヤ
CN102884615A (zh) * 2010-04-14 2013-01-16 大自达电线株式会社 焊线
JP5036892B2 (ja) 2010-05-10 2012-09-26 株式会社神戸製鋼所 コンタクトプローブ
US20120001336A1 (en) * 2010-07-02 2012-01-05 Texas Instruments Incorporated Corrosion-resistant copper-to-aluminum bonds
US8987873B2 (en) * 2010-09-10 2015-03-24 Gregory Richard Tarczynski Super integrated circuit chip semiconductor device
CN102130068B (zh) * 2011-01-07 2012-09-05 四川威纳尔特种电子材料有限公司 一种表面有复合镀层的合金型键合丝
JP5053456B1 (ja) * 2011-12-28 2012-10-17 田中電子工業株式会社 半導体装置接続用高純度銅細線
US8618677B2 (en) * 2012-04-06 2013-12-31 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
JP5776630B2 (ja) * 2012-06-01 2015-09-09 日立金属株式会社 銅系材料及びその製造方法
KR101503462B1 (ko) * 2012-09-05 2015-03-18 엠케이전자 주식회사 반도체 장치용 본딩 와이어 및 그의 제조 방법
KR101451361B1 (ko) * 2012-12-04 2014-10-15 희성금속 주식회사 반도체 패키지용 동 합금 본딩 와이어
TW201430977A (zh) * 2013-01-23 2014-08-01 Heraeus Materials Tech Gmbh 用於接合應用的經塗覆線材
TWI413702B (zh) * 2013-02-19 2013-11-01 Truan Sheng Lui 固相擴散反應銅鈀合金線及其製造方法
CN103219245B (zh) * 2013-03-01 2015-11-25 溧阳市虹翔机械制造有限公司 一种镀钯键合铜丝的制造方法
CN103219247B (zh) * 2013-03-01 2015-11-25 溧阳市虹翔机械制造有限公司 一种镀银键合铜丝的制造方法
JP5420783B1 (ja) 2013-04-05 2014-02-19 田中電子工業株式会社 高速信号線用ボンディングワイヤ
TWI463021B (zh) * 2013-09-14 2014-12-01 Truan Sheng Lui 具電磁遮蔽之無鍍層銅線及其製造方法
CN104517687B (zh) * 2013-09-30 2017-01-04 吕传盛 具电磁遮蔽的无镀层铜线及其制造方法
WO2015074703A1 (en) * 2013-11-21 2015-05-28 Heraeus Deutschland GmbH & Co. KG Coated wire for bonding applications
KR101902091B1 (ko) 2014-04-21 2018-09-27 신닛테츠스미킹 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
DE102014111895A1 (de) * 2014-08-20 2016-02-25 Infineon Technologies Ag Metallisierte elektrische Komponente
CN105390463B (zh) * 2014-08-22 2018-02-09 田中电子工业株式会社 半导体装置接合用铜稀薄镍合金线的构造
JP5669335B1 (ja) * 2014-09-26 2015-02-12 田中電子工業株式会社 銀金合金ボンディングワイヤ
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WO2016189752A1 (ja) 2015-05-26 2016-12-01 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
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EP3118353A1 (de) 2015-07-13 2017-01-18 Heraeus Deutschland GmbH & Co. KG Verfahren zur herstellung eines drahtes aus einem ersten metall mit einer mantelschicht aus einem zweiten metall
WO2017013796A1 (ja) 2015-07-23 2017-01-26 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
DE102016117389B4 (de) * 2015-11-20 2020-05-28 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleiterchip und Verfahren zur Herstellung eines Leistungshalbleiterchips und Leistungshalbleitereinrichtung
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US11033990B2 (en) * 2018-11-29 2021-06-15 Raytheon Company Low cost approach for depositing solder and adhesives in a pattern for forming electronic assemblies
JP2020155559A (ja) * 2019-03-19 2020-09-24 キオクシア株式会社 半導体装置
KR20220153593A (ko) * 2020-03-25 2022-11-18 닛데쓰마이크로메탈가부시키가이샤 반도체 장치용 본딩 와이어
TWI778583B (zh) 2021-04-16 2022-09-21 樂金股份有限公司 銀合金線材
US11929343B2 (en) 2021-06-25 2024-03-12 Nippon Micrometal Corporation Bonding wire for semiconductor devices
US11721660B2 (en) * 2021-06-25 2023-08-08 Nippon Micrometal Corporation Bonding wire for semiconductor devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160554U (ja) * 1984-03-31 1985-10-25 古河電気工業株式会社 半導体用ボンディング細線
JPS6297360A (ja) * 1985-10-24 1987-05-06 Mitsubishi Metal Corp 半導体装置のボンデイングワイヤ用表面被覆高純度銅極細線
GB2375880A (en) * 2001-03-19 2002-11-27 Astrium Gmbh A conductor for a cryogenic device
JP2004064033A (ja) * 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc ボンディングワイヤー

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3104960A1 (de) 1981-02-12 1982-08-26 W.C. Heraeus Gmbh, 6450 Hanau "feinstdraht"
JPS60160554A (ja) 1984-01-31 1985-08-22 Nec Home Electronics Ltd 螢光ランプ
JPS6199645A (ja) 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
KR100717667B1 (ko) 2000-09-18 2007-05-11 신닛뽄세이테쯔 카부시키카이샤 반도체용 본딩 와이어 및 그 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160554U (ja) * 1984-03-31 1985-10-25 古河電気工業株式会社 半導体用ボンディング細線
JPS6297360A (ja) * 1985-10-24 1987-05-06 Mitsubishi Metal Corp 半導体装置のボンデイングワイヤ用表面被覆高純度銅極細線
GB2375880A (en) * 2001-03-19 2002-11-27 Astrium Gmbh A conductor for a cryogenic device
JP2004064033A (ja) * 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc ボンディングワイヤー

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123597A (ja) * 2005-10-28 2007-05-17 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
EP2950335A3 (en) * 2007-07-24 2016-03-30 Nippon Steel & Sumikin Materials Co., Ltd. Semiconductor device bonding wire and wire bonding method
EP2221861A4 (en) * 2007-07-24 2012-06-20 Nippon Steel Materials Co Ltd SEMICONDUCTOR DEVICE CONNECTING WIRE AND WIRE CONNECTING METHOD
US9112059B2 (en) 2007-07-24 2015-08-18 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor device
EP2221861A1 (en) * 2007-07-24 2010-08-25 Nippon Steel Chemical Co., Ltd. Semiconductor device bonding wire and wire bonding method
EP2960931A3 (en) * 2007-07-24 2016-04-27 Nippon Steel & Sumikin Materials Co., Ltd. Copper bond wire
US20110089549A1 (en) * 2008-10-10 2011-04-21 Sumitomo Bakelite Co., Ltd Semiconductor device
CN103295977A (zh) * 2008-10-10 2013-09-11 住友电木株式会社 半导体装置
WO2010109693A1 (ja) * 2009-03-23 2010-09-30 田中電子工業株式会社 ボールボンディング用被覆銅ワイヤ
KR101137751B1 (ko) 2009-03-23 2012-04-24 타나카 덴시 코오교오 카부시키가이샤 볼 접합용 피복 구리 와이어
CN102422404A (zh) * 2009-07-30 2012-04-18 新日铁高新材料株式会社 半导体用接合线
TWI671412B (zh) * 2015-12-15 2019-09-11 日商日鐵化學材料股份有限公司 半導體裝置用接合線
CN114318051A (zh) * 2022-01-08 2022-04-12 烟台一诺电子材料有限公司 一种不同材质的多层环状键合丝及其制备方法

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