JP6467281B2 - ボンディングワイヤのボール形成方法 - Google Patents
ボンディングワイヤのボール形成方法 Download PDFInfo
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- JP6467281B2 JP6467281B2 JP2015093218A JP2015093218A JP6467281B2 JP 6467281 B2 JP6467281 B2 JP 6467281B2 JP 2015093218 A JP2015093218 A JP 2015093218A JP 2015093218 A JP2015093218 A JP 2015093218A JP 6467281 B2 JP6467281 B2 JP 6467281B2
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- ball
- forming method
- oxidizing atmosphere
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- ball forming
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 11
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- 239000001273 butane Substances 0.000 claims description 6
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims description 6
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Wire Bonding (AREA)
Description
2 放電トーチ
3 キャピラリ
4 ガスノズル
5 非酸化雰囲気ガス
Claims (11)
- Cuを主成分とする芯材と、前記芯材の表面にPdを主成分とする被覆層とを有するボンディングワイヤの先端にボール部を形成するボール形成方法において、常温、常圧で気体である炭化水素を含む非酸化雰囲気ガス中で前記ボール部を形成することを特徴とするボール形成方法。
- 前記炭化水素の炭素数が1〜4であることを特徴とする請求項1記載のボール形成方法。
- 前記炭化水素が、メタン、エタン、プロパン、ブタンのいずれか1種以上であることを特徴とする請求項1又は2記載のボール形成方法。
- 前記非酸化雰囲気ガスの炭化水素の濃度が0.08〜12.50体積%であることを特徴とする請求項1〜3のいずれか1項記載のボール形成方法。
- 前記非酸化雰囲気ガスのメタンの濃度が0.25〜12.50体積%であることを特徴とする請求項4記載のボール形成方法。
- 前記非酸化雰囲気ガスのエタンの濃度が0.14〜7.00体積%であることを特徴とする請求項4記載のボール形成方法。
- 前記非酸化雰囲気ガスのプロパンの濃度が0.10〜5.00体積%であることを特徴とする請求項4記載のボール形成方法。
- 前記非酸化雰囲気ガスのブタンの濃度が0.08〜4.00体積%であることを特徴とする請求項4記載のボール形成方法。
- 前記非酸化雰囲気ガスが水素を含むことを特徴とする請求項1〜8のいずれか1項記載のボール形成方法。
- 前記非酸化雰囲気ガスが、前記炭化水素と、前記水素とを含み、残部が窒素及び不可避不純物からなることを特徴とする請求項9記載のボール形成方法。
- 前記水素の濃度が1.0〜5.0体積%であることを特徴とする請求項9又は10記載のボール形成方法。
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JP2015093218A JP6467281B2 (ja) | 2015-04-30 | 2015-04-30 | ボンディングワイヤのボール形成方法 |
PCT/JP2016/062041 WO2016175040A1 (ja) | 2015-04-30 | 2016-04-14 | ボンディングワイヤのボール形成方法 |
US15/569,603 US10121764B2 (en) | 2015-04-30 | 2016-04-14 | Method for forming ball in bonding wire |
TW105112468A TWI704627B (zh) | 2015-04-30 | 2016-04-21 | 接合線之球形成方法 |
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JP2015093218A JP6467281B2 (ja) | 2015-04-30 | 2015-04-30 | ボンディングワイヤのボール形成方法 |
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JP2016213249A JP2016213249A (ja) | 2016-12-15 |
JP6467281B2 true JP6467281B2 (ja) | 2019-02-13 |
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US (1) | US10121764B2 (ja) |
JP (1) | JP6467281B2 (ja) |
TW (1) | TWI704627B (ja) |
WO (1) | WO2016175040A1 (ja) |
Family Cites Families (10)
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JP4158928B2 (ja) | 2004-09-02 | 2008-10-01 | 古河電気工業株式会社 | ボンディングワイヤー及びその製造方法 |
KR101019811B1 (ko) * | 2005-01-05 | 2011-03-04 | 신닛테츠 마테리알즈 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
JP4392015B2 (ja) | 2006-11-21 | 2009-12-24 | 株式会社カイジョー | ワイヤボンディング装置 |
US8247911B2 (en) | 2007-01-15 | 2012-08-21 | Nippon Steel Materials Co., Ltd. | Wire bonding structure and method for forming same |
JP2009105114A (ja) * | 2007-10-22 | 2009-05-14 | Shinkawa Ltd | ワイヤボンディング装置及びボール形成方法 |
KR101055957B1 (ko) * | 2007-12-03 | 2011-08-09 | 가부시키가이샤 닛데쓰 마이크로 메탈 | 반도체 장치용 본딩 와이어 |
CN102422404B (zh) * | 2009-07-30 | 2015-08-12 | 新日铁住金高新材料株式会社 | 半导体用接合线 |
US20150322586A1 (en) * | 2011-11-26 | 2015-11-12 | Microbonds Inc. | Bonding wire and process for manufacturing a bonding wire |
CN103930980B (zh) | 2012-01-26 | 2016-11-23 | 株式会社新川 | 防止氧化的气体的吹送单元 |
JP2014075519A (ja) | 2012-10-05 | 2014-04-24 | Shinkawa Ltd | 酸化防止ガス吹き出しユニット |
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- 2016-04-14 WO PCT/JP2016/062041 patent/WO2016175040A1/ja active Application Filing
- 2016-04-14 US US15/569,603 patent/US10121764B2/en active Active
- 2016-04-21 TW TW105112468A patent/TWI704627B/zh active
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US20180096965A1 (en) | 2018-04-05 |
WO2016175040A1 (ja) | 2016-11-03 |
US10121764B2 (en) | 2018-11-06 |
TWI704627B (zh) | 2020-09-11 |
JP2016213249A (ja) | 2016-12-15 |
TW201703164A (zh) | 2017-01-16 |
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