TWI704627B - 接合線之球形成方法 - Google Patents

接合線之球形成方法 Download PDF

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TWI704627B
TWI704627B TW105112468A TW105112468A TWI704627B TW I704627 B TWI704627 B TW I704627B TW 105112468 A TW105112468 A TW 105112468A TW 105112468 A TW105112468 A TW 105112468A TW I704627 B TWI704627 B TW I704627B
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ball
forming method
volume
concentration
ball forming
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TW201703164A (zh
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荒木典俊
山田隆
榛原照男
大石良
宇野智裕
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日商日鐵化學材料股份有限公司
日商日鐵新材料股份有限公司
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Abstract

本發明提供一種當於Pd被覆Cu接合線之前端形成球時能夠提高球表面之Pd被覆率之球形成方法，其係於具有以Cu為主成分之芯材、及於上述芯材之表面以Pd為主成分之被覆層的接合線(1)之前端形成球部者，其特徵在於：於包含常溫常壓下為氣體之烴之非氧化性環境氣體(5)中形成上述球部。

Description

接合線之球形成方法
本發明係關於一種於接合線之前端形成球部之球形成方法。
隨著資源價格之上漲，接合線將Cu用作材質來代替Au。作為將Cu用作材質之接合線，已知有利用Pd被覆以Cu為主成分之芯材而成之Pd被覆Cu接合線(例如專利文獻1)。
接合線之接合一般使用併用超音波之熱壓接方式。於該方式中，將接合線插通至稱為毛細管之治具，利用電弧加熱將線前端加熱熔融，藉由表面張力形成無空氣焊球(以下，亦簡稱為「球部」或「FAB」)之後，將該球部壓接接合至以150~300℃之範圍內加熱之半導體元件之電極上，其後，藉由超音波壓接直接將接合線接合至外部導線側。
當於Pd被覆Cu接合線之前端形成球部時，需要形成非氧化性環境，以便不使球部氧化。具體而言，一般係於純氮、氬、或於氮中包含5體積%左右之氫之非氧化性環境氣體中形成球部(例如專利文獻2~5)。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利第4158928號公報
[專利文獻2]日本專利第5592029號公報
[專利文獻3]日本專利特開2014-75519號公報
[專利文獻4]日本專利特開2009-105114號公報
[專利文獻5]日本專利特開2008-130825號公報
然而，若於Pd被覆Cu接合線之前端於上述非氧化性環境氣體中形成球部，則於Pd之分佈會產生偏差，存在於球部之表面(以下，亦稱為「球表面」)產生未被Pd被覆之部分之情況。球部之未被Pd被覆之部分於球部與電極之接合中會成為強度降低或電阻增加等之原因。
因此，本發明之目的在於提供一種當於Pd被覆Cu接合線之前端形成球時能夠提高球表面之Pd被覆率之球形成方法。
本發明之球形成方法係於具有以Cu為主成分之芯材、及於上述芯材之表面以Pd為主成分之被覆層的接合線之前端形成球部者，其特徵在於：於包含常溫常壓下為氣體之烴之非氧化性環境氣體中形成上述球部。
根據本發明，藉由電弧放電使非氧化性環境氣體中之烴發熱，藉此更均勻地將熱傳遞至線前端之周圍。藉由該熱使前端熔融，藉此能夠形成球表面之Pd被覆率提高之球部。
1‧‧‧接合線
2‧‧‧放電槍
3‧‧‧毛細管
4‧‧‧氣體噴嘴
5‧‧‧非氧化性環境氣體
圖1係表示本實施形態所使用之線接合裝置之構成之模式圖。
以下，對本發明之實施形態進行詳細說明。首先，對應用於本實施形態之球形成方法之接合線之構成進行說明。
接合線具有以Cu為主成分之芯材、及設置於芯材之表面且以Pd為主成分之被覆層。芯材較佳為由純度98質量%以上之銅形成。芯材 之外徑並無特別限定，較佳為15~50μm。被覆層較佳為設為Pd之濃度為50at%以上之區域，且厚度為0.015~0.15μm。
以此方式構成之接合線於含有Cu之芯材之表面設置有含有Pd之被覆層，藉此能夠防止芯材之氧化。
接合線亦可於被覆層之表面進而形成含有Au之表皮層。表皮層較佳為設為Au之濃度為10at%以上之區域，且厚度為0.0005~0.05μm。
其次，對本實施形態之接合線之製造方法進行說明。接合線可利用一般製造方法製造。接合線可藉由如下方式獲得，即，將以Cu為主成分之母材較細地加工成線狀，形成被覆層、表皮層，並進行熱處理。亦存在於形成被覆層之後，再次進行拉絲及熱處理之情況。
成為芯材之母材係藉由使成為原料之Cu與視需要添加之元素一併熔解、凝固而獲得。熔解可利用電弧加熱爐、高頻加熱爐、電阻加熱爐等。為了防止來自大氣中之O2、N2、H2等氣體之混入，較佳為於真空環境或者Ar或N2等惰性環境中進行熔解。
於芯材之表面形成被覆層、表皮層之方法有鍍敷法、蒸鍍法、熔融法等。鍍敷法可應用電解鍍敷法、非電解鍍敷法之任一種。於稱為預鍍、閃鍍之電解鍍敷中，鍍敷速度較快，與基底之密接性亦良好。非電解鍍敷中使用之溶液分為置換型及還原型，於厚度較薄之情形時，僅利用置換型鍍敷亦充分，於厚度較厚之情形時，於置換型鍍敷之後階段性地實施還原型鍍敷較為有效。
於蒸鍍法中，可利用濺鍍法、離子鍍覆法、真空蒸鍍等物理吸附、及電漿CVD(Chemical Vapor Deposition，化學氣相沈積)等化學吸附。均為乾式，無需被覆層、表皮層形成後之洗淨，而無洗淨時之表面污染等之擔憂。
對於被覆層、表皮層之形成而言，於拉絲成最終線徑之後形成 之方法、及形成於粗徑之Cu合金芯材之後進行複數次拉絲直至成為目標之線徑之方法之任一種均有效。於前者之以最終線徑形成被覆層、表皮層之情形時，製造、品質管理等簡單。於後者之將被覆層、表皮層與拉絲組合之情形時，於與芯材之密接性提高之方面有利。作為各個形成法之具體例，可列舉：一面於電解鍍敷溶液中連續地拂掠線，一面於最終線徑之芯材形成被覆層、表皮層之方法；或者將較粗之芯材浸漬至電解或非電解之鍍敷浴中而形成被覆層、表皮層之後，將線拉絲而達到最終線徑之方法等。
存在有於形成被覆層、表皮層之後，進行熱處理之情況。藉由進行熱處理，於表皮層、被覆層、芯材之間使原子擴散而提高密接強度，故而能夠抑制加工中之表皮層或被覆層之剝離，於生產性提高之方面有效。為了防止來自大氣中之O2之混入，較佳為於真空環境或者Ar或N2等惰性環境中進行熔解。
其次，參照圖1，對在以如上方式構成之接合線之前端形成球部之本實施形態之球形成方法進行說明。圖1所示之線接合裝置具備送出接合線1之毛細管3、放電槍2、及氣體噴嘴4。放電槍2於與自毛細管3前端送出特定長度之接合線1之前端之間產生電弧放電，使線前端熔融，藉此形成球部。氣體噴嘴4將非氧化性環境氣體5吹送至線前端與放電槍2之周圍，形成非氧化性環境。以此方式形成之球部之大小並無特別限定，可設為接合線徑之1.7~2.0倍。
自氣體噴嘴4供給之非氧化性環境氣體5包含常溫常壓下為氣體之烴。非氧化性環境氣體5藉由在放電槍2與接合線1之間產生之電弧放電，使非氧化性環境氣體中之烴發熱。藉此，更均勻地將熱傳遞至線前端之周圍，藉由該熱使前端熔融，藉此形成球部。藉此，能夠形成球表面之Pd被覆率提高之球部。烴之濃度範圍可根據所獲得之熱量決定適當之範圍。非氧化性環境氣體5較佳為包含0.08~12.50體積% 之範圍之烴，且剩餘部分包含氮。又，非氧化性環境氣體5較佳為以0.3~0.8L/min之流量自氣體噴嘴供給。
烴之碳數較佳為1~4。烴可選擇甲烷、乙烷、丙烷、丁烷中之任一種以上。選擇甲烷之情形時之濃度可於0.25~12.50體積%之範圍內適當調整，更佳為1.25~12.50體積%之範圍。選擇乙烷之情形時之濃度可於0.14~7.00體積%之範圍內適當調整，更佳為0.70~7.00體積%之範圍。選擇丙烷之情形時之濃度可於0.10~5.00體積%之範圍內適當調整，更佳為0.50~5.00體積%之範圍。選擇丁烷之情形時之濃度可於0.08~4.00體積%之範圍內適當調整，更佳為0.40~4.00體積%之範圍。於烴之濃度未達上述範圍之下限之情形時，無法獲得提高球表面之Pd被覆率之效果，於烴之濃度超過上述範圍之上限之情形時，球部之圓球性降低。
非氧化性環境氣體5較佳為進而包含氫。藉由使非氧化性環境氣體5包含烴及氫，電弧放電穩定，故而能夠形成球表面之Pd被覆率提高之球部，並且能夠提高球部之圓球性。提高球部之圓球性之效果可於非氧化性環境氣體5中之氫濃度為1.0體積%以上時獲得。氫之濃度可於1.0~5.0體積%之範圍內適當調整，更佳為2.5~5.0體積%之範圍。又，認為提高球部之圓球性之效果於非氧化性環境氣體5中之氫濃度為5.0體積%時飽和。
[實施例]
以下，對實施例進行說明。首先，將原材料之Cu熔解而製作成為芯材之鑄錠。預先準備變細至某線徑之高純度Cu線作為芯材，於該線表面利用電解鍍敷法形成Pd被覆層、Au表皮層。電解鍍敷液係使用以半導體用途市售之鍍敷液。其後，拉絲至最終線徑，最後實施熱處理，以消除加工應變。視需要，於模具拉絲至線徑30~100μm之後，實施擴散熱處理後，進而實施拉絲加工。藉此，製作外徑為18 μm及20μm、被覆層之厚度為0.06μm、表皮層之厚度為0.003μm之接合線。
球部之形成係使用市售之自動打線接合機(K&S製造之Iconn型)。放電槍之電流固定為60mA，且以使FAB徑成為線徑之1.7~2.0倍之方式調整放電時間。非氧化性環境氣體之流量設為0.4~0.6L/min。評價所形成之球表面部之Pd分佈、球形狀。
Pd分佈之評價係採取球徑/線徑之比率為1.7~2.0倍之範圍之球部50個，埋入至樹脂進行研磨，藉此使線之長度方向之球截面露出，利用光學顯微鏡進行觀察，測定被覆層對球部表面之被覆率，算出50個之平均值而進行評價。若被覆率未達50%，則為不良，故而記為×記號，若被覆率為50%以上且未達70%，則判斷實用上無較大問題，記為△記號，若被覆率為70%以上且未達90%，則記為○記號，若被覆率為90%以上，則Pd分佈良好，故而記為◎記號，將其等記於表1~4中之「Pd分佈」之欄。
球形狀之評價係採取球徑/線徑之比率為1.7~2.0倍之範圍之球部50個，利用掃描電子顯微鏡(SEM：Scanning Electron Microscope)進行觀察，而評價球部之圓球性。若產生異常形狀之球為5個以上，則為不良，故而記為×記號，於異形為3~4個之情形時，判斷實用上無較大之問題，記為△記號，於異形為1~2個之情形時，記為○記號，於未產生異形之情形時，球形成良好，故而記為◎記號，將其等記於表1~4中之「FAB形狀」之欄。
表1及表2係表示製成外徑18μm、被覆層之厚度0.06μm、表皮層之厚度0.003μm之接合線，與非氧化性環境氣體條件一併進行評價之結果。又，表3及表4係表示製成外徑20μm、被覆層之厚度0.06μm、表皮層之厚度0.003μm之接合線，與非氧化性環境氣體條件一併進行評價之結果。於表1~表4中，「線A」係表示使用於芯材之表面具備被 覆層及表皮層之接合線之情形，「線B」係表示使用於芯材之表面具備被覆層(未形成有表皮層)之接合線之情形。
Figure 105112468-A0202-12-0008-1
Figure 105112468-A0202-12-0009-2
Figure 105112468-A0202-12-0010-3
Figure 105112468-A0202-12-0011-4
如表1及表3所示，可確認藉由在包含烴之非氧化性環境氣體中形成球部，能夠形成球表面之Pd被覆率提高之球部。
如No.1~16、65~80所示，可確認藉由包含甲烷0.25~12.50體積%作為烴，能夠形成球表面之Pd被覆率提高之球部。又，如No.5~16、69~80所示，藉由將甲烷之濃度設為1.25體積%以上，無論有無表皮層，Pd分佈之評價結果均成為○以上。
如No.17~32、81~96所示，可確認藉由包含乙烷0.14~7.00體積%作為烴，能夠形成球表面之Pd被覆率提高之球部。又，如No.21~32、85~96所示，藉由將乙烷之濃度設為0.70體積%以上，無論有無表皮層，Pd分佈之評價結果均成為○以上。
如No.33~48、97~112所示，可確認藉由包含丙烷0.10~5.00體積%作為烴，能夠形成球表面之Pd被覆率提高之球部。又，如No.37~48、101~112所示，藉由將丙烷之濃度設為0.50體積%以上，無論有無表皮層，Pd分佈之評價結果均成為○以上。
如No.49~64、113~128所示，可確認藉由包含丁烷0.08~4.00體積%作為烴，能夠形成球表面之Pd被覆率提高之球部。又，如No.53~64、117~128所示，藉由將丁烷之濃度設為0.40體積%以上，無論有無表皮層，Pd分佈之評價結果均成為○以上。
又，如No.2~4、6~8、10~12、14~16、18~20、22~24、26 ~28、30~32、34~36、38~40、42~44、46~48、50~52、54~56、58~60、62~64、66~68、70~72、74~76、78~80、82~84、86~88、90~92、94~96、98~100、102~104、106~108、110~112、114~116、118~120、122~124、126~128所示，可確認藉由使非氧化性環境氣體進而包含氫1.0體積%以上，使球形成性提高。又，於氫濃度為2.5體積%時與5.0體積%時，於球形成性未見差異。
1‧‧‧接合線
2‧‧‧放電槍
3‧‧‧毛細管
4‧‧‧氣體噴嘴
5‧‧‧非氧化性環境氣體

Claims (11)

  1. 一種球形成方法，其係於具有以Cu為主成分之芯材、及於上述芯材之表面以50at%以上之濃度包含Pd之被覆層的接合線之前端形成球部者，其特徵在於：具備於包含常溫常壓下為氣體之烴之非氧化性環境氣體中，藉由利用電弧放電之加熱形成上述球部之步驟。
  2. 如請求項1之球形成方法，其中上述烴之碳數為1~4。
  3. 如請求項1或2之球形成方法，其中上述烴係甲烷、乙烷、丙烷、丁烷中之任一種以上。
  4. 如請求項1或2之球形成方法，其中上述非氧化性環境氣體之烴之濃度為0.08~12.50體積%。
  5. 如請求項3之球形成方法，其中上述非氧化性環境氣體之甲烷之濃度為0.25~12.50體積%。
  6. 如請求項3之球形成方法，其中上述非氧化性環境氣體之乙烷之濃度為0.14~7.00體積%。
  7. 如請求項3之球形成方法，其中上述非氧化性環境氣體之丙烷之濃度為0.10~5.00體積%。
  8. 如請求項3之球形成方法，其中上述非氧化性環境氣體之丁烷之濃度為0.08~4.00體積%。
  9. 如請求項1或2之球形成方法，其中上述非氧化性環境氣體包含氫。
  10. 如請求項9之球形成方法，其中上述非氧化性環境氣體包含上述烴及上述氫，且剩餘部分包含氮及不可避免之雜質。
  11. 如請求項9之球形成方法，其中上述氫之濃度為1.0~5.0體積%。
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JP2009105114A (ja) * 2007-10-22 2009-05-14 Shinkawa Ltd ワイヤボンディング装置及びボール形成方法

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