JP4204359B2 - ボンディングワイヤーおよびそれを使用した集積回路デバイス - Google Patents

ボンディングワイヤーおよびそれを使用した集積回路デバイス Download PDF

Info

Publication number
JP4204359B2
JP4204359B2 JP2003081702A JP2003081702A JP4204359B2 JP 4204359 B2 JP4204359 B2 JP 4204359B2 JP 2003081702 A JP2003081702 A JP 2003081702A JP 2003081702 A JP2003081702 A JP 2003081702A JP 4204359 B2 JP4204359 B2 JP 4204359B2
Authority
JP
Japan
Prior art keywords
copper
bonding wire
wire
coating layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003081702A
Other languages
English (en)
Other versions
JP2004006740A (ja
Inventor
毅 野中
信吾 改森
正則 井岡
正人 深萱
Original Assignee
株式会社野毛電気工業
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社野毛電気工業 filed Critical 株式会社野毛電気工業
Priority to JP2003081702A priority Critical patent/JP4204359B2/ja
Publication of JP2004006740A publication Critical patent/JP2004006740A/ja
Application granted granted Critical
Publication of JP4204359B2 publication Critical patent/JP4204359B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/431Pre-treatment of the preform connector
    • H01L2224/4312Applying permanent coating, e.g. in-situ coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/432Mechanical processes
    • H01L2224/4321Pulling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/438Post-treatment of the connector
    • H01L2224/4382Applying permanent coating, e.g. in-situ coating
    • H01L2224/43825Plating, e.g. electroplating, electroless plating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/438Post-treatment of the connector
    • H01L2224/43848Thermal treatments, e.g. annealing, controlled cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/4557Plural coating layers
    • H01L2224/45572Two-layer stack coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45601Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45611Tin (Sn) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45618Zinc (Zn) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45623Magnesium (Mg) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45624Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45639Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45655Nickel (Ni) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/4566Iron (Fe) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664Palladium (Pd) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45666Titanium (Ti) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45669Platinum (Pt) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/4567Zirconium (Zr) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45671Chromium (Cr) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45673Rhodium (Rh) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45676Ruthenium (Ru) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45678Iridium (Ir) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45683Rhenium (Re) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01007Nitrogen [N]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01012Magnesium [Mg]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01016Sulfur [S]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01022Titanium [Ti]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01024Chromium [Cr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01028Nickel [Ni]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01039Yttrium [Y]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0104Zirconium [Zr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01044Ruthenium [Ru]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01045Rhodium [Rh]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01075Rhenium [Re]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01076Osmium [Os]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01077Iridium [Ir]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012Semiconductor purity grades
    • H01L2924/012044N purity grades, i.e. 99.99%
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20752Diameter ranges larger or equal to 20 microns less than 30 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は、集積回路素子(IC、LSI、トランジスタなど)上の電極と、回路配線基板(リードフレーム、セラミックス基板、プリント基板など)の導体配線とを接続するボンディングワイヤー、および該ボンディングワイヤーを使用した集積回路デバイスに関するものである。
【0002】
【従来の技術】
集積回路素子と回路配線基板との接続方法としては、ボールボンディング法、ウェッジボンディング法、半田接続法、抵抗溶接法などが行われているが、その中でも金細線のボンディングワイヤーを用いたボールボンディング法が一般的である。
【0003】
一般的なボールボンディング法のプロセスは以下の通りである。すなわち、移動自在なキャピラリー(以下「ボンディングツール」という)にガイドされたボンディングワイヤーの先端部を、電極トーチとの間で放電させることで溶融しボールを形成する。その後、第1ボンディング点である集積回路素子上の電極に、超音波を印加しつつ前記ボールを押圧して接合を形成する。さらにワイヤーを引き出しながら、ボンディングツールを第2ボンディング点である回路配線基板の電極に移動して同様に接続する(このときボールの形成は無い)。接続後ボンディングツールを上昇させワイヤーをクランプで引っぱることによりワイヤーを切断する。
【0004】
従来、ボンディングワイヤーの素材としては金が使用されている。しかし、高価であるため安価な他の金属からなるボンディングワイヤーの開発が望まれている。
また、集積回路素子と回路配線が接続された後は、回路の保護のために封止がされるが、封止方法としては樹脂封止が広く用いられている。樹脂封止では、溶融樹脂を回路配線に流し回路を覆った後樹脂の硬化がされるが、その際樹脂流によりワイヤーの一部が流され、隣接ワイヤー間が接触短絡することがある。特に、集積回路デバイスの高集積化や小型化を達成するため、ボンディングワイヤーの配線において、隣接ワイヤー間隔の狭小化が押し進められた結果この問題が増加しており、樹脂流により流されにくい剛性の強いボンディングワイヤーが望まれている。
【0005】
安価な金属からなり剛性の強いボンディングワイヤーとして、銅を素材としたボンディングワイヤーが開発されており、例えば特公平8−28382号公報などに開示されている。しかし銅のボンディングワイヤーは表面の酸化が起こりやすいために長時間保存することが難しいことや、ボンディング時に基板からの熱伝導で酸化が進行し、接合性が悪くなるという問題を有する。
【0006】
特開昭62−97360号公報には、銅ボンディングワイヤーの表面酸化を防ぐ方法として、金、銀、白金、パラジウム、ニッケル、コバルト、クロム、チタンなどの貴金属や耐食性金属で銅を被覆したボンディングワイヤーが提案されている。このようなワイヤーは、金ボンディングワイヤーより安価であると同時に表面酸化が起こらず良好な接合性が得られるとされている。
【0007】
【特許文献1】
特公平8−28382号公報
【特許文献2】
特開昭62−97360号公報
【0008】
【発明が解決しようとする課題】
ところが、集積回路デバイスのさらなる高集積化、小型化、すなわち隣接ワイヤー間隔の狭小化を考慮して、本発明者が金またはパラジウムで銅を被覆した銅ボンディングワイヤーを評価したところ、以下に述べる新たな問題が有ることが分かった。
【0009】
(1) 隣接ワイヤー間隔の狭小化には径の小さいボールの形成が不可欠であるが、金被覆銅ボンディングワイヤーでは、小径ボール(ワイヤー直径のおよそ3倍以下を目安とする。)を形成しようとすると真球とならず槍状となり、且つ、形状の再現性も不安定となり接合信頼性が低下する。
【0010】
(2) パラジウム被覆銅ボンディングワイヤーでは、金被覆銅ワイヤーとは異なり形成するボールが槍状となることなく小径ボールを形成できる。しかしボール径が大きい場合および小径ボールの範疇であってもボール径が比較的大きい場合には、ボールの中心がワイヤーの軸からずれてゴルフクラブ状となる不良が発生する。この不良率は径が大きい程、高くなる。
【0011】
(3) パラジウム被覆銅ボンディングワイヤーにおいて、パラジウム被覆をメッキにより銅を主成分とする芯材上に形成する場合、メッキ工程で、パラジウムメッキ液に銅が溶解しやすく、これによりメッキ液の劣化(メッキ能力の低下)が起こりやすい。この結果、メッキ品質が低下するとともに、メッキ液の交換頻度が上がり生産コスト増につながる。
【0012】
(4)パラジウム被覆銅ボンディングワイヤーでは、パラジウム被覆層と芯材との密着性が弱く、パラジウム被覆層が剥がれ易い。被覆層が剥がれると、その部分の芯材が酸化されやすくなり接合性能が低下する他、被覆層の欠片がボンディングツール内で詰まるのでボンディング性が低下する。また落下した被覆層の欠片により集積回路デバイスの不良が発生する、伸線工程を経てワイヤーを製造する場合断線が生じやすいので生産性が低下するなどの問題が発生する。被覆層がメッキにより形成される場合は、化学蒸着方法、物理蒸着方法などの他の方法による場合より密着性は優れるが、密着性のさらなる向上が望まれている。
【0013】
本発明は、このような従来技術の問題点を解決し、広いボール径範囲にわたって、真球のボールを安定的に形成し、かつメッキをする際にメッキ液の劣化をもたらさずに製造することができ、好ましくは、さらに被覆層と芯材との密着性にすぐれるボンディングワイヤーおよびそれを使用した集積回路デバイスを提供することを目的とする。
【0014】
【課題を解決するための手段】
本発明は、銅を主成分とする芯材を、銅よりも高融点の耐酸化性金属で被覆して形成されるボンディングワイヤーにおいて、該芯材と該耐酸化性金属からなる層(被覆層)との間に、銅とは異なる金属の層を設けることにより、前記の従来技術の問題を解決することを特徴とする。
【0015】
すなわち本発明は、銅を主成分とする芯材、該芯材上に形成された銅以外の金属(以下、異種金属とする)からなる異種金属層、および該異種金属層の上に形成され、銅よりも高融点の耐酸化性金属からなる被覆層を有することを特徴とするボンディングワイヤーおよびそれを使用した集積回路デバイスである。
【0016】
本発明者は、銅を主成分とする芯材を有するボンディングワイヤーにおいて、被覆層の材質がボール形成時の形状安定性に与える影響について鋭意研究した結果、被覆層の材質として、芯材の銅より高融点の金属を用いた場合、金メッキ銅ワイヤーのように小径ボールの形成時にボールが槍状になるという不具合がなく、真球のボールが得られやすいとの知見を得た。被覆層の材質の融点が銅よりも高い場合、該材質の銅ワイヤーヘの拡散、溶解が抑えられるためボールの真球性が保持されると考えられる。
【0017】
さらに本発明者は、芯材と被覆層との間に、異種金属層、例えば金層を設けると、ボンディングワイヤー製造過程においてメッキにより被覆層を形成する場合に、メッキ液への銅の溶解を防ぎメッキ液の劣化が起こりにくいとの知見を得た。
また異種金属層を設けると、被覆層と芯材との密着性を向上させることができる他、ボール径のより広い範囲で、ボール形状が真球を保つとの知見も得た。
【0018】
前記のように、被覆層の材質として金などを用いた場合は真球のボールが得られにくい。しかし、本発明においては、芯材上に形成される異種金属層の材質として、金など、銅よりも融点の低い金属を用いた場合であっても、ボール径のより広い範囲でボール形状は真球を保つ。
本発明は、これらの知見に基づき完成されたものである。
【0019】
【発明の実施の形態】
本発明のボンディングワイヤーは、芯材と被覆層との間に、異種金属層を設けることを特徴とする。先に定義したように、異種金属とは、銅以外の金属を言う。異種金属としては、前記のように、銅よりも融点の低い金属でもよい。
【0020】
異種金属としては、金、白金およびこれらの合金が用いられる。
【0021】
金、白金およびこれらの合金はメッキにて容易に異種金属層の形成が可能であるので好適である。
【0022】
異種金属層には、被覆層の形成に使用するメッキ液に対して溶解性の低い金属が好ましい。この観点から、イオン化傾向が低い、不動態を作りやすい金、白金およびこれらの合金が好ましい。
【0023】
本発明において、異種金属層はさらに被覆層により被覆されるが、ボール形成時に、異種金属層の金属は拡散によりボール表面で酸素に触れる。そこで、異種金属としては耐酸化性に優れた金属が好ましい。この観点からも、異種金属としては、金、白金が好適である。
【0024】
パラジウム被覆銅ボンディングワイヤーにおいて、異種金属層に金または白金を用いた場合は、パラジウム被覆層の密着性がすぐれるボンディングワイヤーを得ることができる。この中では、コストの安い金が好ましい。
【0025】
異種金属層としては、異種金属のみからなる層の他に、異種金属を主成分とし、本発明の効果を損なわない範囲で銅を含有する層も挙げられる。
【0026】
異種金属層を形成する金属と被覆層を形成する金属は、通常異なる。ただし、異種金属層は、本発明の効果を損なわない範囲で、被覆層に含まれる金属を一部含んでもよい。また、異種金属層がストライクメッキにより形成され、被覆層が通常のメッキにより形成される場合などは、異種金属層を形成する金属と被覆層を形成する金属が、同じであってもよい。この例としては、異種金属層がパラジウムストライクメッキまたは白金ストライクメッキであり、被覆層がパラジウムメッキまたは白金メッキの場合などが挙げられる。
また、異種金属層は、芯材または被覆層に少量含まれる金属を主成分とする層であってもよい。
【0027】
本発明のボンディングワイヤーは、その被覆層に、銅よりも融点が高く、好ましくは銅よりも融点が200℃以上、より好ましくは300℃以上高く、かつ銅よりも耐酸化性の金属を用いることを特徴とする。中でも、パラジウム、白金およびニッケルから選ばれた少なくとも一種が好適である。銅の融点は1084℃であるのに対し、パラジウムの融点は1554℃、白金の融点は1772℃、ニッケルの融点は1455℃である。特にパラジウムは、比較的安価でありメッキ性も良く、かつニッケルよりも耐酸化性に優れ、白金よりも加工性に優れる(伸線加工が容易である)ので好適である。もちろん、パラジウム、白金およびニッケルから選ばれた2種以上を含む合金を被覆層の材質としても良いし、銅よりも高融点で耐酸化性であれば、パラジウム、白金およびニッケルから選ばれた金属と銅との合金を被覆層の材質としても良い。被覆層の材質は、パラジウム、白金およびニッケルから選ばれた金属を主成分とし別の元素を含む合金であっても、合金の融点が銅より高ければ構わない。
【0028】
異種金属層および被覆層を芯材上に形成した本発明のボンディングワイヤーとしては、単位断面積当たりの伸びが0.021%/μm以上のものが、ボール形成時にボールの中心とワイヤーの軸とがずれて、いわゆるゴルフクラブ状となる不良率を低減することができるので好ましい。より好ましい単位断面積当たりの伸びは0.024%/μm以上、さらに好ましくは0.030%/μm以上である。
【0029】
ここで、単位断面積当たりの伸びとは、10cmの長さのワイヤーを引っ張り速度20mm/分で引っ張り、破断した際のワイヤーの伸びた割合(%)を、引っ張る前のワイヤーの断面積(芯材、異種金属層および被覆層の合計「μm」)で割った値である。
【0030】
ボンディングワイヤーでは通常、伸線して最終線径が得られた後にアニール(「最終アニール」)を行って伸びを調整するが、最終アニール以外に、被覆層形成後の伸線工程の途中でも、アニール(中間アニールと呼ぶ)を施すことにより、最終アニールのみでは困難な高い伸びのボンディングワイヤー、例えば0.030%/μm以上の高い単位断面積当たりの伸びを有するボンディングワイヤーを得ることができる。
【0031】
この高い伸びを有するワイヤーは、ボールがゴルフクラブ状となる不良率を低減することができるとの効果以外にも、ワイヤーループ形状のコントロール性の改善、第2ボンドの接合強度が大きくなるなどの利点を有する。ワイヤーループ形状のコントロール性の改善により、隣接ワイヤー間の接触不良やルーピング中の接合部の破損などを低減することができる。
【0032】
本発明のボンディングワイヤーの芯材は、銅を主成分とする。銅を主成分とする芯材には、銅のみからなる芯材も含まれる。しかし、芯材には、銅以外の元素が合計で0.001質量%以上、1質量%以下含まれていることが、高い伸び特性を出すために好ましい。(なお、本明細書において、質量%は重量%と同義である。)この不純物量が0.01質量%以上であればさらに好適である。
【0033】
芯材に含有する不純物としてはべリリウム、錫、亜鉛、ジルコニウム、銀、クロム、鉄、酸素、硫黄、水素などが挙げられる。不純物の混合量を特定の値以上とすることにより、不純物が少ない場合では実現しにくい高い伸び特性が得られる。また、高い伸び特性を特に目指さない場合においても、不純物が少ない場合に比べて加工時の断線などを大幅に減少させることができる。ただし、銅以外の元素量が多すぎると電気抵抗が高くなるなど電気特性面でマイナスとなる他、ボール形成時にボール表面がクレーター状になる、という不具合が発生する。この観点から銅以外の元素の合計は1質量%以下であることが望ましい。
【0034】
本発明のボンディングワイヤーは、本発明の効果を損なわない範囲で、芯材上に異種金属層、被覆層以外の層を有してもよい。異種金属層、被覆層以外の層は、被覆層の外側に設けることもできるし、芯材と異種金属層間または異種金属層と被覆層間に設けることもできる。また、異種金属層、被覆層はそれぞれ複数の層を有してもよい。
【0035】
本発明のボンディングワイヤーの直径は、特に限定されない。小ボール径を目的とする場合、15〜40μmが好適である。
異種金属層の厚みは特に限定されない。通常、0.001μm〜0.1μmの範囲が好ましく、さらに好ましくは0.001〜0.03μmである。通常、被覆層の厚みの0.001〜0.1倍程度あれば十分である。
【0036】
被覆層の厚みも、特に限定されない。ワイヤー径にもよるが、芯材の径の1〜0.0001倍程度が好適であり、より好適には、0.3〜0.01倍程度である。また、ワイヤーを垂直に切断した際の断面において、Y(断面積比)=(被覆層断面積/芯材断面積)とした場合、0.007≦Y≦0.05となる厚みがより好ましい。さらに好ましくは、0.01≦Y≦0.04である。大きな径のボールを形成するとき、ゴルフクラブ状となりやすい傾向があるが、このように限定することで、真球のボールを形成することができ、ボールがゴルフクラブ状となる不良率を低減することができる。断面積比Yは、層の厚みを変えることで容易に調整することができる。
【0037】
芯材上に、異種金属層および被覆層を形成する方法としては、電気メッキにより異種金属層を形成し、その上に電気メッキにより被覆層を形成する方法が好適である。
【0038】
なお異種金属層を電気メッキにて形成する場合、そのメッキとしては、一般にストライクメッキ、フラッシュメッキおよび下地メッキと呼ばれる密着性を重視したメッキ(本明細書においては、これら全てをストライクメッキという)が好ましい。これらのメッキのメッキ液は、通常のメッキの場合と異なり、一般に金属濃度が低く、高電位で安定したメッキができる電導塩組成を有している。特に金ストライクメッキ、白金ストライクメッキ、およびそれらの合金のストライクメッキが好ましい。
【0039】
また、太い銅線に、先ず異種金属のメッキまたはストライクメッキを施し、その後被覆層の材質である金属の厚メッキを施したものを、複数回伸線して狙いのワイヤー径、層厚を出す方法が経済的で好ましい。特に、電気メッキと伸線の組合せは、厚みの均一性および表面の平滑性の点でもすぐれ、ボンディングツールのワイヤー通過穴内面との摩擦が小さくワイヤーのフィード性が良好である。さらには、芯材、異種金属層、被覆層の間の密着力が高いために、剥がれた被覆層や異種金属層の欠片がボンディングツール内で詰まる問題も解消できる。
【0040】
特開昭62−97360号公報に開示されている実施例のように化学蒸着方法、物理蒸着方法による形成法は、製造コストが高くなる場合が多いが、異種金属層のような薄膜を形成する場合は、コストが許容できる場合も有る。従って、化学蒸着方法、物理蒸着方法による異種金属層の形成も考えられる。
【0041】
異種金属層を有しないボンディングワイヤーの製造工程においては、前記のように、電気メッキによる被覆層の形成時に、メッキ液へ芯材の銅が溶解し、メッキ液が劣化する。しかし、異種金属層がある場合は、銅へのメッキではなく、異種金属層上へのメッキとなるため、銅の溶け込みによるメッキ液劣化の心配がなく好適である。
【0042】
【実施例】
以下本発明を、実施例を用いてより具体的に説明するが、この実施例は、本発明の範囲を限定するものではない。
【0043】
実施例
純度99.995%、直径200μmの銅ワイヤーに、電気メッキにて約0.01μmの金ストライクメッキを形成した後、0.8μmのパラジウムメッキを形成した。これを伸線することにより銅の芯材の径25μm、パラジウム層(被覆層)0.1μm、金層(異種金属層)約0.001μmの銅ボンディングワイヤーを作製した。これを用いてボンダー((株)カイジョー製 型番FB137)で各径のボールを形成し、その際の不良率と主な不良形状を調査した。ここで、ボール径はその条件で形成される真球の径にて決定した。ボール形成の条件としては、ワイヤー先端とスパークロッド間距離を400μmとし、窒素を1リットル/分の流量でワイヤー先端部に吹き付け、その周辺の酸素濃度を低下させた状態で行った。結果を表1に示す。
【0044】
比較例1
金層(異種金属層)が形成されていない以外は実施例と同構成のボンディングワイヤーを用い、同条件下でボールを形成し、実施例と同様に不良率と主な不良形状を調査した。結果を表1に示す。
【0045】
比較例2
純度99.995%、直径200μmの銅ワイヤーに、電気メッキにて0.8μmの金メッキ被覆層を形成した。これを伸線することにより銅の芯材の径25μm、金メッキ厚0.1μmの銅ボンディングワイヤーを作製した。これを用いて、実施例と同様に不良率と主な不良形状を調査した。結果を表1に示す。
【0046】
表1に示すように異種金属層としての金ストライクメッキ層がある実施例のボンディングワイヤーの方が、比較例より良好なボール形成性を有すことが分かる。
【0047】
【表1】
Figure 0004204359
【0048】
【発明の効果】
本発明のボンディングワイヤーは、ボールの形成能がよく、広いボール径範囲にわたって真球のボールを安定的に形成する。すなわち、接合信頼性にすぐれる。また、被覆層をメッキにて形成する場合、該メッキ工程においてメッキ液の劣化をおこさないとの利点を有するので、製造コストの安価なボンディングワイヤーである。また被覆層の密着性が良いので、この観点からも接合信頼性に優れるボンディングワイヤーである。
【0049】
さらに、芯材に剛性がある銅を用いるため、樹脂封止時に樹脂流によりワイヤーが流されにくく、隣接ワイヤーとの接触の可能性が少ない。
そして、安価ですぐれたボンディングワイヤーとして、集積回路素子上の電極と回路配線基板の導体配線との接続などに用いられ、このようなボンディングワイヤーを使用した集積回路デバイスは、信頼性にすぐれ、かつ安価なデバイスとして広い用途に用いられる。

Claims (5)

  1. 銅を主成分とする芯材、該芯材上に形成され金または白金からなる異種金属層、および、該異種金属層の上に形成され、銅よりも融点が200℃以上高い耐酸化性金属からなる被覆層を有することを特徴とするボンディングワイヤー。
  2. 異種金属層を形成する金属が、金であることを特徴とする請求項1に記載のボンディングワイヤー。
  3. 被覆層を形成する金属が、パラジウム、白金、ニッケルまたはこれらを主成分とする合金から選ばれる金属であることを特徴とする請求項1または請求項2に記載のボンディングワイヤー。
  4. 被覆層を形成する金属が、パラジウムであることを特徴とする請求項3に記載のボンディングワイヤー。
  5. 請求項1ないし請求項4のいずれか1項に記載のボンディングワイヤーを使用したことを特徴とする集積回路デバイス。
JP2003081702A 2002-03-26 2003-03-25 ボンディングワイヤーおよびそれを使用した集積回路デバイス Expired - Lifetime JP4204359B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003081702A JP4204359B2 (ja) 2002-03-26 2003-03-25 ボンディングワイヤーおよびそれを使用した集積回路デバイス

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002085891 2002-03-26
JP2003081702A JP4204359B2 (ja) 2002-03-26 2003-03-25 ボンディングワイヤーおよびそれを使用した集積回路デバイス

Publications (2)

Publication Number Publication Date
JP2004006740A JP2004006740A (ja) 2004-01-08
JP4204359B2 true JP4204359B2 (ja) 2009-01-07

Family

ID=30446001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003081702A Expired - Lifetime JP4204359B2 (ja) 2002-03-26 2003-03-25 ボンディングワイヤーおよびそれを使用した集積回路デバイス

Country Status (1)

Country Link
JP (1) JP4204359B2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012222194A (ja) * 2011-04-11 2012-11-12 Sumitomo Metal Mining Co Ltd 銅ボンディングワイヤ

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7271497B2 (en) 2003-03-10 2007-09-18 Fairchild Semiconductor Corporation Dual metal stud bumping for flip chip applications
JP2007012776A (ja) * 2005-06-29 2007-01-18 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
JP4672373B2 (ja) * 2005-01-05 2011-04-20 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
JP2006216929A (ja) * 2005-01-05 2006-08-17 Nippon Steel Corp 半導体装置用ボンディングワイヤ
JP4722671B2 (ja) * 2005-10-28 2011-07-13 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
TWI427719B (zh) 2007-01-15 2014-02-21 Nippon Steel & Sumikin Mat Co The joint structure of the joining wire and its forming method
US7952028B2 (en) 2008-01-25 2011-05-31 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor device
JP4886899B2 (ja) 2009-03-17 2012-02-29 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤ
JP4349641B1 (ja) * 2009-03-23 2009-10-21 田中電子工業株式会社 ボールボンディング用被覆銅ワイヤ
CN102484080B (zh) 2009-06-18 2015-07-22 罗姆股份有限公司 半导体装置
SG178063A1 (en) 2009-07-30 2012-03-29 Nippon Steel Materials Co Ltd Bonding wire for semiconductor
JP4637256B1 (ja) * 2009-09-30 2011-02-23 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤー
JP5497360B2 (ja) * 2009-07-30 2014-05-21 新日鉄住金マテリアルズ株式会社 半導体用ボンディングワイヤー
JP5393614B2 (ja) * 2010-08-03 2014-01-22 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
JP2010245574A (ja) * 2010-08-03 2010-10-28 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
JP5616739B2 (ja) 2010-10-01 2014-10-29 新日鉄住金マテリアルズ株式会社 複層銅ボンディングワイヤの接合構造
JP5888152B2 (ja) * 2012-07-05 2016-03-16 住友金属鉱山株式会社 パラジウムめっき液の劣化状態評価方法、パラジウムめっき方法
JP5765323B2 (ja) * 2012-12-07 2015-08-19 日立金属株式会社 銅ボンディングワイヤ及びその製造方法
JP5591987B2 (ja) * 2013-08-20 2014-09-17 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012222194A (ja) * 2011-04-11 2012-11-12 Sumitomo Metal Mining Co Ltd 銅ボンディングワイヤ

Also Published As

Publication number Publication date
JP2004006740A (ja) 2004-01-08

Similar Documents

Publication Publication Date Title
JP4204359B2 (ja) ボンディングワイヤーおよびそれを使用した集積回路デバイス
WO2003081661A1 (fr) Fil de liaison et dispositif de circuit integre faisant appel a ce fil de liaison
TW578286B (en) Bonding wire
JP4349641B1 (ja) ボールボンディング用被覆銅ワイヤ
KR101057271B1 (ko) 반도체 장치용 본딩 와이어
TWI647766B (zh) Bonding wire for semiconductor device
JP4672373B2 (ja) 半導体装置用ボンディングワイヤ
US10840208B2 (en) Bonding wire for semiconductor device
WO2011013527A1 (ja) 半導体用ボンディングワイヤー
JP2005167020A (ja) ボンディングワイヤーおよびそれを使用した集積回路デバイス
JP2007012776A (ja) 半導体装置用ボンディングワイヤ
KR20060090700A (ko) 본딩와이어 및 그것을 사용한 집적회로 디바이스
JP2004014884A (ja) ボンディングワイヤー
JP2010245390A (ja) ボンディングワイヤ
JP2005123499A (ja) ボンディングワイヤーおよびそれを使用した集積回路デバイス
JP5591987B2 (ja) 半導体装置用ボンディングワイヤ
JP2010272884A (ja) 半導体装置用ボンディングワイヤ
JP2003133361A (ja) ボンディングワイヤー
JPH0332033A (ja) 電子装置
TW201638967A (zh) 接合線以及打線接合方法
JP2005123511A (ja) ボンディングワイヤーおよびそれを使用した集積回路デバイス
JP2005123540A (ja) ボンディングワイヤーおよびそれを使用した集積回路デバイス
JP3716391B2 (ja) バンプ形成用パラジウム被覆ワイヤ
JP2010245574A (ja) 半導体装置用ボンディングワイヤ
TW201711150A (zh) 球焊用銅合金細線

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040316

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20051121

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20051121

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051227

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070828

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080520

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080718

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080822

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081007

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081014

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111024

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4204359

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111024

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313114

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111024

Year of fee payment: 3

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111024

Year of fee payment: 3

R370 Written measure of declining of transfer procedure

Free format text: JAPANESE INTERMEDIATE CODE: R370

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313114

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111024

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111024

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121024

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121024

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131024

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term