JP5393614B2 - 半導体装置用ボンディングワイヤ - Google Patents
半導体装置用ボンディングワイヤ Download PDFInfo
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- JP5393614B2 JP5393614B2 JP2010174551A JP2010174551A JP5393614B2 JP 5393614 B2 JP5393614 B2 JP 5393614B2 JP 2010174551 A JP2010174551 A JP 2010174551A JP 2010174551 A JP2010174551 A JP 2010174551A JP 5393614 B2 JP5393614 B2 JP 5393614B2
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- Wire Bonding (AREA)
Description
(1) 銅を主成分とする芯材と、該芯材の上に芯材と異なる組成の導電性金属の表皮層からなるボンディングワイヤであって、前記表皮層の主成分が、金及びパラジウムであり、前記表皮層の表面に接する側に金、パラジウムそれぞれ0.1mol%以上を深さ方向にばらつき2mol%以内の均一濃度で含有する合金の最表領域が存在し、前記表皮層内の芯材側にワイヤ径方向に金、パラジウムの少なくとも1種と銅の濃度勾配を有する領域(以下「濃度勾配領域」という。)が存在し、前記濃度勾配領域において深さ方向に金とパラジウムの合計濃度が減少するとともに銅は濃度が増加し、表皮層と芯材との境界は金とパラジウムの合計濃度が10mol%となる位置であることを特徴とする半導体装置用ボンディングワイヤ。
Claims (1)
- 銅を主成分とする芯材と、該芯材の上に芯材と異なる組成の導電性金属の表皮層からなるボンディングワイヤであって、前記表皮層の主成分が、金及びパラジウムであり、前記表皮層の表面に接する側に金、パラジウムそれぞれ0.1mol%以上を深さ方向にばらつき2mol%以内の均一濃度で含有する合金の最表領域が存在し、前記表皮層内の芯材側にワイヤ径方向に金、パラジウムの少なくとも1種と銅の濃度勾配を有する領域(以下「濃度勾配領域」という。)が存在し、前記濃度勾配領域において深さ方向に金とパラジウムの合計濃度が減少するとともに銅は濃度が増加し、表皮層と芯材との境界は金とパラジウムの合計濃度が10mol%となる位置であることを特徴とする半導体装置用ボンディングワイヤ。
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JP2010174551A JP5393614B2 (ja) | 2010-08-03 | 2010-08-03 | 半導体装置用ボンディングワイヤ |
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JP2010174551A JP5393614B2 (ja) | 2010-08-03 | 2010-08-03 | 半導体装置用ボンディングワイヤ |
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JP2005000638A Division JP4672373B2 (ja) | 2005-01-05 | 2005-01-05 | 半導体装置用ボンディングワイヤ |
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JP2013170489A Division JP5591987B2 (ja) | 2013-08-20 | 2013-08-20 | 半導体装置用ボンディングワイヤ |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4722671B2 (ja) * | 2005-10-28 | 2011-07-13 | 新日鉄マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
JP5408147B2 (ja) * | 2011-01-26 | 2014-02-05 | 日鉄住金マイクロメタル株式会社 | ボンディングワイヤ |
JP6002300B1 (ja) | 2015-09-02 | 2016-10-05 | 田中電子工業株式会社 | ボールボンディング用パラジウム(Pd)被覆銅ワイヤ |
JP6047214B1 (ja) * | 2015-11-02 | 2016-12-21 | 田中電子工業株式会社 | ボールボンディング用貴金属被覆銅ワイヤ |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60160554U (ja) * | 1984-03-31 | 1985-10-25 | 古河電気工業株式会社 | 半導体用ボンディング細線 |
JPS6379926A (ja) * | 1986-09-24 | 1988-04-09 | Fujikura Ltd | ボンデイングワイヤ |
JPH01255236A (ja) * | 1988-04-05 | 1989-10-12 | Kobe Steel Ltd | 複合ボンディングワイヤ |
EP0722198A3 (en) * | 1995-01-10 | 1996-10-23 | Texas Instruments Inc | Bond wire with integrated contact area |
JPH1098061A (ja) * | 1996-09-24 | 1998-04-14 | Kobe Steel Ltd | 半導体素子用ボンディングワイヤ |
WO2002023618A1 (fr) * | 2000-09-18 | 2002-03-21 | Nippon Steel Corporation | Fil de connexion de semi-conducteur et son procede de fabrication |
JP2004064033A (ja) * | 2001-10-23 | 2004-02-26 | Sumitomo Electric Wintec Inc | ボンディングワイヤー |
JP4204359B2 (ja) * | 2002-03-26 | 2009-01-07 | 株式会社野毛電気工業 | ボンディングワイヤーおよびそれを使用した集積回路デバイス |
TW200414453A (en) * | 2002-03-26 | 2004-08-01 | Sumitomo Electric Wintec Inc | Bonding wire and IC device using the bonding wire |
JP2004014884A (ja) * | 2002-06-07 | 2004-01-15 | Sumitomo Electric Wintec Inc | ボンディングワイヤー |
JP4672373B2 (ja) * | 2005-01-05 | 2011-04-20 | 新日鉄マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
JP4617375B2 (ja) * | 2007-12-03 | 2011-01-26 | 新日鉄マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
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