JP4722671B2 - 半導体装置用ボンディングワイヤ - Google Patents
半導体装置用ボンディングワイヤ Download PDFInfo
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- JP4722671B2 JP4722671B2 JP2005314548A JP2005314548A JP4722671B2 JP 4722671 B2 JP4722671 B2 JP 4722671B2 JP 2005314548 A JP2005314548 A JP 2005314548A JP 2005314548 A JP2005314548 A JP 2005314548A JP 4722671 B2 JP4722671 B2 JP 4722671B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 131
- 239000002184 metal Substances 0.000 claims abstract description 131
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 84
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 81
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 45
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- 229910052697 platinum Inorganic materials 0.000 claims abstract description 42
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 40
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000010931 gold Substances 0.000 claims abstract description 34
- 229910052737 gold Inorganic materials 0.000 claims abstract description 33
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2924/2076—Diameter ranges equal to or larger than 100 microns
Description
前記外皮層は、ワイヤ径方向の導電性金属濃度が一定の領域(以下「濃度一定領域」という。)、ワイヤ径方向に導電性金属の濃度勾配を有する領域(以下「濃度勾配領域」という。)のいずれかであるか、あるいは外皮層の表面側が前記濃度一定領域で芯材側が前記濃度勾配領域であり、前記濃度勾配領域においては導電性金属が表面から深さ方向に向けて濃度が低下し、
外皮層と芯材との境界は外皮層を構成する導電性金属を総計した検出濃度が10mol%となる位置であり、
前記外皮層の厚さが0.001〜0.09μmの範囲である半導体装置用ボンディングワイヤ。
(2) 銀、金、パラジウム、白金、アルミニウムのうち一種以上を主成分元素とする芯材と、該主成分元素と異なる導電性金属であるパラジウム、白金、銀又はアルミニウムから選ばれる1種以上を主成分とする外皮層を芯材の外側に有するボンディングワイヤであって、
前記外皮層は、ワイヤ径方向の導電性金属濃度が一定の領域(以下「濃度一定領域」という。)、ワイヤ径方向に導電性金属の濃度勾配を有する領域(以下「濃度勾配領域」という。)のいずれかであるか、あるいは外皮層の表面側が前記濃度一定領域で芯材側が前記濃度勾配領域であり、前記濃度勾配領域においては導電性金属が表面から深さ方向に向けて濃度が低下し、
外皮層と芯材との境界は外皮層を構成する導電性金属を総計した検出濃度が10mol%となる位置であり、
前記外皮層は、添加元素の総計濃度を0.0001〜0.02mol%の範囲で含有し、厚さが0.001〜0.09μmの範囲である半導体装置用ボンディングワイヤ。
(3) 銀、金、パラジウム、白金、アルミニウムのうち一種以上を主成分元素とする芯材と、該主成分元素と異なる導電性金属であるパラジウム、白金、銀又はアルミニウムから選ばれる1種以上を主成分とする外皮層を芯材の外側に厚さが0.001〜0.09μmの範囲で有するボンディングワイヤであって、
前記外皮層は、ワイヤ径方向の導電性金属濃度が一定の領域(以下「濃度一定領域」という。)、ワイヤ径方向に導電性金属の濃度勾配を有する領域(以下「濃度勾配領域」という。)のいずれかであるか、あるいは外皮層の表面側が前記濃度一定領域で芯材側が前記濃度勾配領域であり、前記濃度勾配領域においては導電性金属が表面から深さ方向に向けて濃度が低下し、
外皮層と芯材との境界は外皮層を構成する導電性金属を総計した検出濃度が10mol%となる位置であり、
ワイヤ全体に占める該導電性金属の総計濃度が0.002〜1.0mol%の範囲である半導体装置用ボンディングワイヤ。
(4) 前記外皮層は濃度勾配領域を有し、該濃度勾配領域の厚さが0.001〜0.09μmの範囲である(1)〜(3)のいずれかに記載の半導体装置用ボンディングワイヤ。
(5) 銀、金、パラジウム、白金、アルミニウムのうち一種以上を主成分元素とする芯材と、該主成分元素と異なる導電性金属であるパラジウム、白金、銀又はアルミニウムから選ばれる1種以上を主成分とする外皮層を芯材の外側に有するボンディングワイヤであって、
前記外皮層は、ワイヤ径方向の導電性金属濃度が一定の領域(以下「濃度一定領域」という。)、ワイヤ径方向に導電性金属の濃度勾配を有する領域(以下「濃度勾配領域」という。)のいずれかであるか、あるいは外皮層の表面側が前記濃度一定領域で芯材側が前記濃度勾配領域であり、前記濃度勾配領域においては導電性金属が表面から深さ方向に向けて濃度が低下し、
外皮層と芯材との境界は外皮層を構成する導電性金属を総計した検出濃度が10mol%となる位置であり、
前記外皮層内において導電性金属濃度が40mol%以上である領域の厚さが0.001〜0.08μmである半導体装置用ボンディングワイヤ。
(6) 銀、金、パラジウム、白金、アルミニウムのうち一種以上を主成分元素とする芯材と、該主成分元素と異なる導電性金属であるパラジウム、白金、銀又はアルミニウムから選ばれる1種以上を含有する外皮層を芯材の外側に有するボンディングワイヤであって、
前記外皮層は、ワイヤ径方向に導電性金属の濃度勾配を有する領域(以下「濃度勾配領域」という。)、あるいは外皮層の表面側がワイヤ径方向の導電性金属濃度が一定の領域(以下「濃度一定領域」という。)で芯材側が前記濃度勾配領域であり、前記濃度勾配領域においては導電性金属が表面から深さ方向に向けて濃度が低下し、
外皮層と芯材との境界は外皮層を構成する導電性金属を総計した検出濃度が10mol%となる位置であり、
前記濃度勾配領域は導電性金属の最高濃度が50〜100mol%の範囲であり、該濃度勾配領域の厚さが0.001〜0.08μmの範囲である半導体装置用ボンディングワイヤ。
(7) 前記外皮層は濃度一定領域を有し、該濃度一定領域の厚さが0.07μm以下である(1)〜(6)のいずれかに記載の半導体装置用ボンディングワイヤ。
(8) 前記外皮層の表面で導電性金属と主成分元素が濃度偏重を有する(1)〜(7)のいずれかに記載の半導体装置用ボンディングワイヤ。
(9) 前記の芯材がBa、Ca、Sr、Be、Ge、Sn、In又は希土類元素から選ばれる1種以上の添加元素を含有し、ワイヤ全体に占める該添加元素濃度が総計で0.0001〜0.03質量%の範囲である(1)〜(7)のいずれかに記載の半導体装置用ボンディングワイヤ。
Claims (9)
- 銀、金、パラジウム、白金、アルミニウムのうち一種以上を主成分元素とする芯材と、該主成分元素と異なる導電性金属であるパラジウム、白金、銀又はアルミニウムから選ばれる1種以上を主成分とする外皮層を芯材の外側に有するボンディングワイヤであって、
前記外皮層は、ワイヤ径方向の導電性金属濃度が一定の領域(以下「濃度一定領域」という。)、ワイヤ径方向に導電性金属の濃度勾配を有する領域(以下「濃度勾配領域」という。)のいずれかであるか、あるいは外皮層の表面側が前記濃度一定領域で芯材側が前記濃度勾配領域であり、前記濃度勾配領域においては導電性金属が表面から深さ方向に向けて濃度が低下し、
外皮層と芯材との境界は外皮層を構成する導電性金属を総計した検出濃度が10mol%となる位置であり、
前記外皮層の厚さが0.001〜0.09μmの範囲である半導体装置用ボンディングワイヤ。 - 銀、金、パラジウム、白金、アルミニウムのうち一種以上を主成分元素とする芯材と、該主成分元素と異なる導電性金属であるパラジウム、白金、銀又はアルミニウムから選ばれる1種以上を主成分とする外皮層を芯材の外側に有するボンディングワイヤであって、
前記外皮層は、ワイヤ径方向の導電性金属濃度が一定の領域(以下「濃度一定領域」という。)、ワイヤ径方向に導電性金属の濃度勾配を有する領域(以下「濃度勾配領域」という。)のいずれかであるか、あるいは外皮層の表面側が前記濃度一定領域で芯材側が前記濃度勾配領域であり、前記濃度勾配領域においては導電性金属が表面から深さ方向に向けて濃度が低下し、
外皮層と芯材との境界は外皮層を構成する導電性金属を総計した検出濃度が10mol%となる位置であり、
前記外皮層は、添加元素の総計濃度を0.0001〜0.02mol%の範囲で含有し、厚さが0.001〜0.09μmの範囲である半導体装置用ボンディングワイヤ。 - 銀、金、パラジウム、白金、アルミニウムのうち一種以上を主成分元素とする芯材と、該主成分元素と異なる導電性金属であるパラジウム、白金、銀又はアルミニウムから選ばれる1種以上を主成分とする外皮層を芯材の外側に厚さが0.001〜0.09μmの範囲で有するボンディングワイヤであって、
前記外皮層は、ワイヤ径方向の導電性金属濃度が一定の領域(以下「濃度一定領域」という。)、ワイヤ径方向に導電性金属の濃度勾配を有する領域(以下「濃度勾配領域」という。)のいずれかであるか、あるいは外皮層の表面側が前記濃度一定領域で芯材側が前記濃度勾配領域であり、前記濃度勾配領域においては導電性金属が表面から深さ方向に向けて濃度が低下し、
外皮層と芯材との境界は外皮層を構成する導電性金属を総計した検出濃度が10mol%となる位置であり、
ワイヤ全体に占める該導電性金属の総計濃度が0.002〜1.0mol%の範囲である半導体装置用ボンディングワイヤ。 - 前記外皮層は濃度勾配領域を有し、該濃度勾配領域の厚さが0.001〜0.09μmの範囲である請求項1〜3のいずれかに記載の半導体装置用ボンディングワイヤ。
- 銀、金、パラジウム、白金、アルミニウムのうち一種以上を主成分元素とする芯材と、該主成分元素と異なる導電性金属であるパラジウム、白金、銀又はアルミニウムから選ばれる1種以上を主成分とする外皮層を芯材の外側に有するボンディングワイヤであって、
前記外皮層は、ワイヤ径方向の導電性金属濃度が一定の領域(以下「濃度一定領域」という。)、ワイヤ径方向に導電性金属の濃度勾配を有する領域(以下「濃度勾配領域」という。)のいずれかであるか、あるいは外皮層の表面側が前記濃度一定領域で芯材側が前記濃度勾配領域であり、前記濃度勾配領域においては導電性金属が表面から深さ方向に向けて濃度が低下し、
外皮層と芯材との境界は外皮層を構成する導電性金属を総計した検出濃度が10mol%となる位置であり、
前記外皮層内において導電性金属濃度が40mol%以上である領域の厚さが0.001〜0.08μmである半導体装置用ボンディングワイヤ。 - 銀、金、パラジウム、白金、アルミニウムのうち一種以上を主成分元素とする芯材と、該主成分元素と異なる導電性金属であるパラジウム、白金、銀又はアルミニウムから選ばれる1種以上を含有する外皮層を芯材の外側に有するボンディングワイヤであって、
前記外皮層は、ワイヤ径方向に導電性金属の濃度勾配を有する領域(以下「濃度勾配領域」という。)、あるいは外皮層の表面側がワイヤ径方向の導電性金属濃度が一定の領域(以下「濃度一定領域」という。)で芯材側が前記濃度勾配領域であり、前記濃度勾配領域においては導電性金属が表面から深さ方向に向けて濃度が低下し、
外皮層と芯材との境界は外皮層を構成する導電性金属を総計した検出濃度が10mol%となる位置であり、
前記濃度勾配領域は導電性金属の最高濃度が50〜100mol%の範囲であり、該濃度勾配領域の厚さが0.001〜0.08μmの範囲である半導体装置用ボンディングワイヤ。 - 前記外皮層は濃度一定領域を有し、該濃度一定領域の厚さが0.07μm以下である請求項4〜6のいずれかに記載の半導体装置用ボンディングワイヤ。
- 前記外皮層の表面で導電性金属と主成分元素が濃度偏重を有する請求項1〜7のいずれかに記載の半導体装置用ボンディングワイヤ。
- 前記の芯材がBa、Ca、Sr、Be、Ge、Sn、In又は希土類元素から選ばれる1種以上の添加元素を含有し、ワイヤ全体に占める該添加元素濃度が総計で0.0001〜0.03質量%の範囲である請求項1〜7のいずれかに記載の半導体装置用ボンディングワイヤ。
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EP2960931B8 (en) * | 2007-07-24 | 2020-11-04 | NIPPON STEEL Chemical & Material Co., Ltd. | Copper bond wire |
WO2009072525A1 (ja) * | 2007-12-03 | 2009-06-11 | Nippon Steel Materials Co., Ltd. | 半導体装置用ボンディングワイヤ |
JP4617375B2 (ja) * | 2007-12-03 | 2011-01-26 | 新日鉄マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
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JP2014082368A (ja) * | 2012-10-17 | 2014-05-08 | Nippon Micrometal Corp | ボンディングワイヤ |
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SG11202109960TA (en) * | 2019-03-13 | 2021-10-28 | Nippon Micrometal Corp | Bonding wire |
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CN113584354B (zh) * | 2021-08-03 | 2022-08-02 | 上杭县紫金佳博电子新材料科技有限公司 | 一种键合铝合金丝及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5423794B2 (ja) * | 1975-01-27 | 1979-08-16 | ||
JPH01162343A (ja) * | 1987-12-18 | 1989-06-26 | Kobe Steel Ltd | ボンディングワイヤ |
JP2001196411A (ja) * | 2000-01-11 | 2001-07-19 | Noge Denki Kogyo:Kk | 金被覆した銀線ボンディングワイヤ |
JP2003197668A (ja) * | 2001-12-10 | 2003-07-11 | Senmao Koochii Kofun Yugenkoshi | 半導体パッケージ用のボンディングワイヤ及びその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000031194A (ja) * | 1998-07-10 | 2000-01-28 | Fuji Electric Co Ltd | ボンディングワイヤおよび半導体装置 |
JP4204359B2 (ja) * | 2002-03-26 | 2009-01-07 | 株式会社野毛電気工業 | ボンディングワイヤーおよびそれを使用した集積回路デバイス |
JP2004014884A (ja) * | 2002-06-07 | 2004-01-15 | Sumitomo Electric Wintec Inc | ボンディングワイヤー |
JP2005167020A (ja) * | 2003-12-03 | 2005-06-23 | Sumitomo Electric Ind Ltd | ボンディングワイヤーおよびそれを使用した集積回路デバイス |
JP2005123499A (ja) * | 2003-10-20 | 2005-05-12 | Sumitomo Electric Ind Ltd | ボンディングワイヤーおよびそれを使用した集積回路デバイス |
JP4398816B2 (ja) * | 2004-07-21 | 2010-01-13 | 古河電気工業株式会社 | ボンディングワイヤーの製造方法 |
JP4672373B2 (ja) * | 2005-01-05 | 2011-04-20 | 新日鉄マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
US7820913B2 (en) * | 2005-01-05 | 2010-10-26 | Nippon Steel Materials Co., Ltd. | Bonding wire for semiconductor device |
JP2010245574A (ja) * | 2010-08-03 | 2010-10-28 | Nippon Steel Materials Co Ltd | 半導体装置用ボンディングワイヤ |
JP5393614B2 (ja) * | 2010-08-03 | 2014-01-22 | 新日鉄住金マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
-
2005
- 2005-10-28 JP JP2005314548A patent/JP4722671B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5423794B2 (ja) * | 1975-01-27 | 1979-08-16 | ||
JPH01162343A (ja) * | 1987-12-18 | 1989-06-26 | Kobe Steel Ltd | ボンディングワイヤ |
JP2001196411A (ja) * | 2000-01-11 | 2001-07-19 | Noge Denki Kogyo:Kk | 金被覆した銀線ボンディングワイヤ |
JP2003197668A (ja) * | 2001-12-10 | 2003-07-11 | Senmao Koochii Kofun Yugenkoshi | 半導体パッケージ用のボンディングワイヤ及びその製造方法 |
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