JP4617375B2 - 半導体装置用ボンディングワイヤ - Google Patents
半導体装置用ボンディングワイヤ Download PDFInfo
- Publication number
- JP4617375B2 JP4617375B2 JP2008295178A JP2008295178A JP4617375B2 JP 4617375 B2 JP4617375 B2 JP 4617375B2 JP 2008295178 A JP2008295178 A JP 2008295178A JP 2008295178 A JP2008295178 A JP 2008295178A JP 4617375 B2 JP4617375 B2 JP 4617375B2
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- Prior art keywords
- wire
- skin layer
- bonding
- core material
- bonding wire
- Prior art date
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- 239000011162 core material Substances 0.000 claims description 115
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/04—Alloys based on a platinum group metal
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/431—Pre-treatment of the preform connector
- H01L2224/4312—Applying permanent coating, e.g. in-situ coating
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/432—Mechanical processes
- H01L2224/4321—Pulling
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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Description
Claims (7)
- 導電性金属からなる芯材と、前記芯材の上に該芯材とは異なる金属を主成分とする表皮層とを有する半導体装置用ボンディングワイヤであって、
前記芯材は、該芯材を構成する主成分がCuで、B、Pd、Bi、P、Zrのいずれか1種以上を含有し、
前記表皮層の金属が面心立方晶であって、該表皮層の厚さが0.005〜0.2μmの範囲であり、
前記表皮層の表面の結晶面におけるワイヤ長手方向の結晶方位<hkl>の内、前記ワイヤ長手方向に対して角度差が15°以内までを含む<111>の方位比率が50%以上であり、
前記表皮層の表面の結晶面におけるワイヤ長手方向の結晶方位<hkl>の内、前記ワイヤ長手方向に対して角度差が15°以内までを含む<111>と<100>との方位比率の総計が60%以上である
ことを特徴とする半導体装置用ボンディングワイヤ。 - 前記芯材は、B、Pd、Bi、P、Zrの1種以上を総量5〜300ppmの範囲で含有する
ことを特徴とする請求項1に記載の半導体装置用ボンディングワイヤ。 - 前記芯材の断面の結晶面におけるワイヤ長手方向の結晶方位<hkl>の内、前記ワイヤ長手方向に対して角度差が15°以内までを含む<111>と<100>との方位比率の総計が15%以上である
ことを特徴とする請求項1又は2に記載の半導体装置用ボンディングワイヤ。 - 前記表皮層を構成する主成分がPd、Pt、Ru、Agの内いずれか1種である
ことを特徴とする請求項1〜3のいずれか1項に記載の半導体装置用ボンディングワイヤ。 - 前記表皮層と前記芯材との間に、前記表皮層及び前記芯材を構成する主成分とは異なる成分からなる中間金属層を有する
ことを特徴とする請求項1〜4のいずれか1項に記載の半導体装置用ボンディングワイヤ。 - 前記表皮層と前記芯材の間に、前記表皮層及び前記芯材の主成分の濃度勾配を有する拡散層を有する
ことを特徴とする請求項1〜5のいずれか1項に記載の半導体装置用ボンディングワイヤ。 - 前記芯材は、Pdを5〜10000ppmの範囲で含有し、前記表皮層を構成する主成分がPdまたはAgである
ことを特徴とする請求項1に記載の半導体装置用ボンディングワイヤ。
Priority Applications (11)
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JP2008295178A JP4617375B2 (ja) | 2007-12-03 | 2008-11-19 | 半導体装置用ボンディングワイヤ |
KR1020107024696A KR101383401B1 (ko) | 2007-12-03 | 2008-12-02 | 반도체 장치용 본딩 와이어 |
PCT/JP2008/071899 WO2009072498A1 (ja) | 2007-12-03 | 2008-12-02 | 半導体装置用ボンディングワイヤ |
KR1020117017997A KR101100564B1 (ko) | 2007-12-03 | 2008-12-02 | 반도체 장치용 본딩 와이어 |
KR1020097026296A KR101030384B1 (ko) | 2007-12-03 | 2008-12-02 | 반도체 장치용 본딩 와이어 |
CN200880024022.4A CN101689519B (zh) | 2007-12-03 | 2008-12-02 | 半导体装置用接合引线 |
MYPI2010000596A MY159518A (en) | 2007-12-03 | 2008-12-02 | Bonding wire for semiconductor devices |
US12/669,662 US8299356B2 (en) | 2007-12-03 | 2008-12-02 | Bonding wire for semiconductor devices |
EP08858289.5A EP2200076B1 (en) | 2007-12-03 | 2008-12-02 | Bonding wire for semiconductor devices |
TW097146887A TWI533381B (zh) | 2007-12-03 | 2008-12-03 | Connection of semiconductor devices |
TW100127912A TW201207971A (en) | 2007-12-03 | 2008-12-03 | Bonding wire for semiconductor devices |
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JP2008295178A JP4617375B2 (ja) | 2007-12-03 | 2008-11-19 | 半導体装置用ボンディングワイヤ |
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JP2010238295A Division JP5222339B2 (ja) | 2007-12-03 | 2010-10-25 | 半導体装置用ボンディングワイヤ |
JP2010238296A Division JP5222340B2 (ja) | 2007-12-03 | 2010-10-25 | 半導体装置用ボンディングワイヤ |
JP2010238297A Division JP4772916B2 (ja) | 2007-12-03 | 2010-10-25 | 半導体装置用ボンディングワイヤ |
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US (1) | US8299356B2 (ja) |
EP (1) | EP2200076B1 (ja) |
JP (1) | JP4617375B2 (ja) |
KR (3) | KR101030384B1 (ja) |
CN (1) | CN101689519B (ja) |
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Cited By (2)
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JP2011044729A (ja) * | 2007-12-03 | 2011-03-03 | Nippon Steel Materials Co Ltd | 半導体装置用ボンディングワイヤ |
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JP2010272884A (ja) * | 2010-08-03 | 2010-12-02 | Nippon Steel Materials Co Ltd | 半導体装置用ボンディングワイヤ |
Also Published As
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KR20100134719A (ko) | 2010-12-23 |
US20100294532A1 (en) | 2010-11-25 |
MY159518A (en) | 2017-01-13 |
EP2200076A1 (en) | 2010-06-23 |
US8299356B2 (en) | 2012-10-30 |
EP2200076A4 (en) | 2012-06-06 |
EP2200076B1 (en) | 2016-09-28 |
KR20110098010A (ko) | 2011-08-31 |
TW201207971A (en) | 2012-02-16 |
KR20100013328A (ko) | 2010-02-09 |
TW200937546A (en) | 2009-09-01 |
JP2009158931A (ja) | 2009-07-16 |
KR101030384B1 (ko) | 2011-04-20 |
TWI533381B (zh) | 2016-05-11 |
KR101383401B1 (ko) | 2014-04-08 |
CN101689519B (zh) | 2015-05-06 |
CN101689519A (zh) | 2010-03-31 |
TWI364806B (ja) | 2012-05-21 |
KR101100564B1 (ko) | 2011-12-29 |
WO2009072498A1 (ja) | 2009-06-11 |
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