CN102884615A - 焊线 - Google Patents

焊线 Download PDF

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Publication number
CN102884615A
CN102884615A CN2011800188602A CN201180018860A CN102884615A CN 102884615 A CN102884615 A CN 102884615A CN 2011800188602 A CN2011800188602 A CN 2011800188602A CN 201180018860 A CN201180018860 A CN 201180018860A CN 102884615 A CN102884615 A CN 102884615A
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CN
China
Prior art keywords
core
wire
coating
bonding wire
ball
Prior art date
Application number
CN2011800188602A
Other languages
English (en)
Inventor
长谷川刚
Original Assignee
大自达电线株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2010-092882 priority Critical
Priority to JP2010092882 priority
Application filed by 大自达电线株式会社 filed Critical 大自达电线株式会社
Priority to PCT/JP2011/058786 priority patent/WO2011129256A1/ja
Publication of CN102884615A publication Critical patent/CN102884615A/zh

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    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227—Rods, wires
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Abstract

本发明的焊线，即使在被覆层（2）上产生龟裂也极力抑制芯材（1）的抗氧化性变差。是用于通过球焊法将集成电路元件的电极（a）与电路配线基板的导体配线（c）进行连接的、线径（L）12μm~50.8μm的焊线（W）。向由99.99质量%以上的铜构成的芯材（1），为了提高抗氧化性添加Au或铂族中的至少1种以上，为了提高电阻添加P，在该芯材（1）的外周整面形成抗氧化性的Pt或Pd的厚度（t）0.02～0.09μm的被覆层（2）。该焊线因P的添加而电阻值变高，火花以低电流·短时间稳定地形成FAB。在芯材（1）中添加了Au或铂族，因此不与P生成化合物，保证抗氧化性提高效果。因此，即使在该被覆层上产生龟裂，也极力抑制由该龟裂导致的芯材的抗氧化性变差。

Description

焊线

技术领域

[0001] 本发明涉及一种焊线及其制造方法，该焊线用于通过球焊法将1C、LSI、晶体管等集成电路元件上的电极与引线框、陶瓷基板、印制电路基板等电路配线基板的导体配线进行连接。

背景技术

[0002] 基于这种球焊法的连接方法，通常为图I (a)〜（h)中示出的形态，从该图的（a)示出的将金属线W插通于毛细管10a，在其前端形成球（FAB :Free Air Ball)b的状态，打开夹10b，使毛细管IOa朝向集成电路元件的电极a下降。此时，球（FAB) b被捕捉在毛细管IOa内，焊接在电极a上。

[0003] 球b与作为靶的电极a接触时(毛细管IOa到达电极a时)，毛细管IOa夹住球b，对球b施加热、加重、超声波，由此使球b与电极a固相接合,形成第I点焊接（1st bond)而与电极a粘接(第I接合，图I (b))。

[0004] 形成第I点焊接，则毛细管IOa上升至一定高度后（该图的（c))，移动至导体配线 c的正上方(该图的（d)〜（e))。此时，为了形成稳定的环线，有时使毛细管IOa进行特殊的转动而进行赋予金属线W “弯曲”的动作(参照该图的（d)的从点划线到实线)。

[0005] 到达导体配线c的正上方的毛细管10a，朝向导体配线c下降，将金属线W向导体配线(第2靶）c按压(该图（e)〜（f))。与此同时，对该按压部位施加热、加重、超声波，由此使金属线W变形,形成用于使金属线W与导体配线c接合的针脚焊接（stitch bond)和在下一步骤中确保线尾（tail)的线尾焊接（tail bond)(第2接合，图I (f))。

[0006] 形成这两个焊接后，毛细管IOa以留下金属线W的状态上升，在毛细管IOa的前端确保一定长度的线尾后，关闭夹IOb (夹住金属线W)，从线尾焊接的部分拉断金属线W (图I (g))。

[0007] 毛细管IOa上升到所需要的高度后停止，对该毛细管IOa的前端确保的金属线W的前端部分，用放电棒g施加高电压，迸出火花(放电)，利用该热熔化金属线W，该熔化的金属线材料因表面张力成为接近球状的球b而凝固（图I (h))。

[0008] 在以上的作用下结束一个循环，之后，通过相同的作用，对电极a与导体配线c进行基于球焊法的连接。

[0009] 在基于该球焊法的连接中，对于焊线W，主要使用金线，但由于金价格高，所以近年来开始使用铜纯度99. 9质量％以上（3N)的廉价的铜线。此时，因铜在裸露的状态下容易发生表面的氧化，所以在该氧化成为问题的场合，如图2所示，使用将抗氧化金属2覆盖在由铜线构成的芯材I上而成的线。

[0010] 作为该覆盖金属（被覆层）2，采用金（Au)、钼（Pt)、钯（Pd)、银（Ag)、镍（Ni)等(专利文献I〜3)。

[0011] 专利文献I:日本特开2003-133361号公报

[0012] 专利文献2:日本特开2004-64033号公报[0013] 专利文献3:日本特开2007-12776号公报

[0014] 专利文献4:日本特开2009-140953号公报

[0015] 在由该金属覆盖的铜线构成的焊线W中，伴随着基于近年的电子部件的小型化等的集成电路元件间的极小化，需要使上述球b更小，因此对于焊线W也期望小直径，由此，优选使其直径L为50 μ m以下(专利文献I段落0009)。

[0016] 另外，在与集成 电路元件的电极a的连接中，如果球b为向下的矛状(倒圆锥状)，则将上述球b向电极a按压时，该球b的尖端有可能损坏电极a，因此优选球b尽可能为圆球形。为了提高该球b的球度，在使上述被覆层2的厚度t设为芯线直径的O. 001以下(专利文献I权利要求I )，或者同样地使被覆层2的厚度t设为O. 001〜O. 02 μ m (专利文献3权利要求I )，或者用比芯材I的铜熔点高的抗氧化金属形成被覆层2 (专利文献2段落0014)。

[0017] 并且，在以有机基板为基础的BGA(Ball Grid Array)等中，如果增高加热温度(载台温度)，则产生翘曲使焊接性显著变差。因此，即使降低上述金属线W与电极a或导体配线c的接合时的加热温度(载台温度)、例如降至150°C左右，也要进行用于保证充分的接合强度的各种处理，例如在热处理后进行拉丝加工等(专利文献3段落0020，同0054等)。

[0018] 另外，还公开有在芯材I的铜中添加磷（P)、硼（B)、铋（Bi)、锡（Sn)、银（Ag)、锰(Mg)，使peel试验(剥离试验）中的断裂伸长率增加，并且利用在球的熔融时该P等添加金属与形成被覆层2的抗氧化性金属的协同效果，从而提高球的球度的技术(专利文献4段落0055)。

发明内容

[0019] 如上所述，对于用抗氧化金属覆盖铜线而成焊线W，一直以来在进行各种研究并相应地获得了好评，但基于近年的低成本化，在作业的高速化的要求中，进一步需求作业的稳定性，例如需求下述连续焊接性、FAB的稳定性等。

[0020] 为了提高其作业的稳定性，可考虑提高芯材I的电阻值，在该情况下，可选择上述P等。通过提高其电阻值，能够以低电流•短时间进行FAB形成时的火花。但是，在添加该P等时，抗氧化性有可能变差。

[0021] 另外，如果使作业高速化，则在利用上述球焊法的连接中，如图I (e)〜（f)中示出地使毛细管IOa朝向导体配线c下降，将金属线W向导体配线(第2靶)c按压，使金属线W像虾尾那样弯曲(参照该图（f))时，伴随着其弯曲有时在被覆层2上产生龟裂。如果被覆层2上产生龟裂，则该龟裂位置的抗氧化性变差，该图的（h)中的形成球b时，该圆球的形成会有问题。

[0022] 本发明将提高焊线W的电阻值的同时防止抗氧化性的降低作为第I课题，将即使产生上述龟裂也极力抑制抗氧化性变差作为第2课题。

[0023] 为了实现上述第I课题，本发明首先添加上述的被认为可提高电阻值的P、B、Bi、Sn、Ag、Mg 中的 Po

[0024] 通过该P的添加使电阻值变高，通过以低电流·短时间稳定地供给FAB形成时的火花，能够进行该FAB形成。

[0025] 对于P，即使添加也具有加工热稳定性，并且通常作为Cu-P合金销售，其容易得至|J，并且容易得到所需要的添加量。与此相对，B的热稳定性差，因此不易添加，Bi从环境方面出发不理想，Sn存在因溶解而出现烟尘的问题，Ag易氧化，可靠性差，Mg的蒸气压低，存在难以添加的问题。

[0026] 接着，作为上述抗氧化材料，可考虑上述Au、Pt、Pd、Ag、Ni或Fe (铁)、Cr (铬)、Mn等，其中，Ag、Ni、Fe、Mn容易与P生成化合物（Ag-P、Ni-P、Fe-P、Cr-P、Mn-P),因此即使添加也对抗氧化性的提高没有帮助。因此，添加了即使熔融也不与P化合的Au或Ru、Rh、Pd、0s.Ir.Pt的钼族（Pt族）中的至少I种以上。此时，从容易添加所需的量的观点出发，更优选I种，优选最多2种。

[0027] 这样，只要是不与P化合的Au或Pt族，就能够实现由P的添加得到的电阻值的提高的同时也能够实现由Au等的添加得到的抗氧化性的提高。

[0028] 该P的添加量和Au等的添加量，在能够得到其效果的范围通过实验等适当地设定即可，例如，对于P，为2〜250ppm;对于Au等，为总计I〜IOOppm0如果低于P :2ppm，则有时无法实现电阻值的提高，无法得到以低电流·短时间形成球的效果，如果超过250ppm，则·电阻值上升过高，有可能阻碍将信号从Si芯片等元件（电极a)传递到导线(导体配线c)这样的作为焊线的功能，并且有可能在上述第I接合时的电极a上产生裂纹(芯片裂纹)。如果Au等超过lOOppm，则金属线W的强度变得过高，可能成为第I接合时的芯片裂纹的原因，如果低于lppm，则可能无法实现抗氧化性的效果。另外，对于P而言，形成球的特别稳定的范围为IOppm以上。

[0029] 并且，最近有时使用更脆弱的电极a，因此对芯片裂纹的要求变得更为严格。由此，P的添加量和Au等的添加量的更优选的范围是对于P为50ppm以下,对于Au等为总计lppnT50ppm。只要为该范围，就可得到上述的效果，并且球不会变得过硬，即使更脆弱的电极a也能够不产生芯片裂纹地进行第I接合。另一方面，如果添加P超过50ppm且为250ppm以下或者添加Au等超过50ppm且为IOOppm以下,则球b变硬,无法对脆弱的电极a使用。

[0030] 作为本发明的具体的构成，是用于通过球焊法将集成电路元件的电极与电路配线基板的导体配线进行连接的、线径12 μ πΓ50. 8 μ m的焊线，是由为了提高抗氧化性而添加Au或Pt族中的至少I种，并且为了提高电阻而添加了 P而得的纯度99. 99质量％以上的铜构成的焊线。

[0031] 在该构成中，将焊线W的线径L设为50. 8 μ m以下是因为虽然在上述的专利文献I中将该直径L设为50 μ m以下,但在50. 8 μ m以下时,也能够几乎与50 μ m以下相同的程度地使上述球b更变小。

[0032] 另外，将线径L的下限设为12 μ m以上是因为低于12 μ m时，焊接前操作人员难以将金属线W通过毛细管10a，作业性差。

[0033] 将芯材I的铜纯度设为99. 9质量％ (3N)以上是为了确保铜的高导电性。

[0034] 为了实现上述第2课题，本发明首先，在芯材中为了提高电阻值而添加P，并且为了提高抗氧化性而添加了 Au或Pt族中的至少I种以上，从而能够使FAB形成时的火花以低电流·短时间稳定地进行该FAB的形成，并且使芯材具有抗氧化性。

[0035] 这样，与上述同样地，通过P的添加，在不导致抗氧化性变差的情况下，使电阻值变高,通过以低电流·短时间稳定地供给FAB形成时的火花，从而能够进行该FAB的形成。

[0036] 接着，在芯材的外周整面形成抗氧化性的Pt或Pd的厚度t为O. 02〜O. 09 μ m的被覆层。

[0037] 如上所述，该Pt或Pd不与P生成化合物，因此即使被覆层熔化也不生成其化合物，可实现电阻值和抗氧化性的提高。

[0038] 另外，Pd, Pt的熔点比铜的熔点高，因此可期待球b的球度的增加。

[0039] 应予说明，在上述第2接合时等中，即使金属线(被覆层)上产生龟裂，该龟裂通常也很小，因此通过以上述芯材I中的Au等的添加量可充分抑制其氧化。

[0040] 作为本发明的具体的构成，是用于通过球焊法将集成电路元件的电极与电路配线基板的导体配线进行连接的、线径12 μ πΓ50. 8 μ m的焊线，其芯材由为了提高抗氧化性而添加金或钼族中的至少I种以上并且为了提高电阻而添加了 P的纯度99. 9质量％以上的

铜构成，并且在其芯材的外周整面形成有抗氧化性的Pt或Pd的厚度O. 02〜O. 09 μ m的被覆层的构成的焊线。

[0041] 在该构成中，将线径设为12 μ πΓ50. 8 μ m，纯度设为99. 9质量％以上的理由与上述相同。

[0042] 另外,被覆层2的厚度t越薄,球b的硬度越低,损坏Si芯片（电极a)的可能性越低，但如果过薄，针脚焊接接合时，芯材I的铜露出的程度变大，只能显示出不具有被覆层2的铜线程度的针脚焊接接合性。例如，从下述实施例与比较例的实验结果可理解的那样，有可能发生2次以上的停机。因此，根据该实施例与比较例的实验结果，将被覆层2的厚度t设为O. 02μπι以上。

[0043] 应予说明，在载台温度：150°C左右的低温度下进行球焊时，根据连续焊接性的实验结果将其厚度t设为O. 04μ m以上。如果降低载台温度，则针脚焊接接合所需要的加重变大，被覆层2的厚度t在O. 02 μ m以上且低于O. 04 μ m的范围时，芯材的铜露出的程度变大，连续焊接性受损。

[0044] 另一方面，如果被覆层2较厚，则球b的硬度变高，损坏Si芯片（电极a)的可能性变高。因此，根据下述实施例与比较例的实验结果，将被覆层2的厚度t设为O. 09 μ m以下。

[0045] 另外，还确认有将被覆层2的厚度t设为O. 04μ m以上时，即使载台温度为150°C，机器故障也变少，尤其是在被覆层2采用Pd，使被覆层2的厚度t设为O. 05 μ m以上时，即使载台温度为更低温的130°C，也不发生机器故障。认为这是由于钯被覆层2时Cu和Pd的熔融时间差小更容易形成圆球的协同效果而导致的。

[0046] 并且，如果使上述芯材的铜纯度为99. 99质量％(4N)以上、进一步为99. 999质量％(5N)以上，则损坏Si芯片（电极a)的可能性变低。这是因为通过使铜纯度为99. 99质量％以上、进一步为99. 999质量％以上，能够进一步降低FAB硬度。

[0047] 在这些构成的焊线W的制造方法中可采用各种构成，例如可采用如下的构成，SP，在由纯度99. 9质量％以上的铜构成的芯材I的外周整面形成由Pt、Pd的I种以上形成的被覆层2，对其被覆线进行扩散热处理来提高芯材和被覆层的密合性后，将其拉伸至线径12μπΓ50. 8μπι，进而，以拉伸伸长率成为8%以上的方式进行调质热处理，使被覆层2的厚度 t 为 O. 02 〜O. 09 μ m。

[0048] 该被覆层2通过电解电镀、非电解镀覆、蒸镀法等公知的方法形成，通常，对于金属线W，使较大线径的铜棒依次穿过称为模具的工具而精加工为规定的线径，因此以该工序过程中的恰当的线径利用上述方法形成被覆层2。此时，覆盖时的芯材I的线径由作业性·成本所决定，但从制造装置的限制出发通常为O. 2〜O. 8_。将Pd等金属覆盖在外周整面而成的被覆线是在200〜500°C (被覆线的温度）下实施扩散热处理，提高上述芯材I和被覆层2的密合性后，拉伸至线径12 μ πΓ50. 8 μ m，进而，以拉伸伸长率成为8%以上的方式进行调质热处理，从而可以使被覆层2的厚度t为O. 02〜O. 09 μ mo

[0049] 将拉伸伸长率设为8%以上是为了提高针脚焊接接合性，得到更稳定的焊接性。

[0050] 在以上的焊线W的制造方法中，可在上述铜中添加上述所需量的P。此时，对于不具有被覆层2的金属线W，省略形成该被覆层2的工序。

[0051] 本发明如上所述那样提高电阻值，因此能够以低电流·短时间稳定地形成其FAB，并且能够极力抑制氧化。另外，对于设有被覆层的金属线，假设即使在被覆层2上产生龟裂，也能够极力抑制由该龟裂导致的抗氧化性变差。

附图说明

[0052] 图I是球焊连接法的说明图，Ca)〜（h)是其过程图。

[0053] 图2是本发明所涉及的焊线的剖视图。

[0054] 图3是俄歇峰值强度与被覆层(镀覆层）深度的关系图。

具体实施方式

[0055] 制作表I示出的实施例I〜20和比较例I〜12，进行该焊线W的连续焊接性、HTST(High Temperature Storage Test)、FAB的稳定性以及第I接合部的Si芯片（电极a)的损坏程度的试验(确认）（表2)。

[0056] S卩，首先，制备在铜纯度99. 99质量％的纯铜（4N)中添加了所需ppm的Au、Ru、Rh、Pd、Os、Ir、Pt以及P而成的8mm直径的铜合金线，利用电镀法将Pd、Pt覆盖在该铜合金线上，反绕该被覆线，将其通过退火炉后，再次用卷绕用卷轴卷绕，从而进行了连续扩散热处理。退火炉使用具有炉长Im的炉芯管的电炉，在炉芯管中流有氮气。使炉温为5000C〜800°C、使被覆线(铜合金线）的温度为200〜500°C，该被覆线的移动速度为5〜60m/分钟。

[0057] 实施以上的扩散热处理，提高铜线(芯材）1与被覆层2的密合性后，将其拉伸至线径15〜50 μ m,进而，以拉伸伸长率成为8%以上的方式进行调质热处理，从而得到被覆层2的厚度t :0. 011〜O. 134 μ m的焊线W (实施例3〜15和比较例I〜10)。

[0058] 接着，对这些各焊线W进行下述评价，将其结果在表2中示出。

[0059]〔表面被覆层的厚度〕

[0060] 进行基于俄歇电子能谱法的深度分析。深度分析如下进行：一边用Ar离子溅射，一边测定Pd或Pt的浓度，换算成SiO2算出离表层的距离。对于表面被覆层的厚度，将达到表层Pd或Pt浓度的测定值的I / 2的浓度的点作为表面被覆层的厚度(参照图3)。

[0061]〔添加元素的分析〕

[0062] 使用ICP分析。

[0063]〔连续焊接性〕

[0064] 用焊接机进行10000次连续焊接，如果未发生停机则设为A，发生I次停机则设为B，发生2次以上停机则设为D。[0065] 如果载台温度低则连续焊接变得困难，因此在200°C、150°C的2水平下进行。

[0066] 另外，在载台温度130°C下进行相同的连续焊接。对于此时的评价，将未发生停机的情况设为A、发生I次停机设为B、发生2〜3次停机设为C、发生3次以上停机设为D。

[0067] (HTST)

[0068] 焊接后，将引线框放入加热至200°C的大气炉中，用光学显微镜500倍的倍率确认经过IOOOhr后的金属线W的状态。将未进行氧化的情况设为A，将产生裂纹并Cu露出而氧化部散布在金属线W上的情况设为D。

[0069] (FAB的稳定性〕

[0070] 制备100个FAB，如果95%以上为圆球状则设为A，90%以上且低于95%为圆球状则设为B，如果低于90%则设为D。 [0071]〔第I接合部的Si芯片损坏〕

[0072] 焊接后，为了评价第I球接合部正下方的Si芯片损坏，用王水溶解球接合部和电极膜，以扫描式电子显微镜（SEM) 500倍观察Si芯片的裂纹。

[0073] 观察100个接合部，将存在一个低于5 μ m的微小的凹陷或看不到凹陷的情况设为A，将存在2〜5个低于5 μ m的微小的凹陷的情况设为B，将确认2个以上5 μ m以上的裂纹或6个以上低于5 μ m的微小的凹陷的情况设为D。

[0074]〔综合评价〕

[0075] A :连续焊接性的评价在200°C、150°C时均为A，且其他的评价也为A的焊线

[0076] B :连续焊接性的评价在200°C时为A，150°C时为B，且其他的评价为A的焊线

[0077] C :连续焊接性的评价在130°C时为C，且其他的评价为A或B的焊线

[0078] D :至少一个为D的焊线

[0079] 在该A、B、C、D中，A、B为良好，C为可以使用。

[0080]表 I

Figure CN102884615AD00091
Figure CN102884615AD00101

[0084] 从该试验结果可以理解，如果被覆层厚度t低于O. 02 μ m,则200°C和150°C两者的连续焊接性降低（比较例1、3、7)，如果为O. 02 μ m以上且低于0.04 μ m，则能够满足前者的连续焊接性(实施例1、3、10、17、比较例8)，如果为O. 04 μ m以上，则能够满足两者的连续焊接性（良好）（实施例2、4〜9、11〜16、18〜20，比较例2、4〜6、9〜12)。另外，可知在被覆层中使用Pd，被覆层厚度t为O. 05 μ m以上，则能够满足130°C下的连续焊接性（实施例 2、4、5、7 〜9、11、13、14，比较例 4 〜6)。

[0085] 另一方面，如果被覆层厚度t超过O. 09 μ m,则球b变硬，可确认到Si芯片（电极a)的损坏（比较例2、9、11、12)。

[0086] 另外，在芯材I中添加Ippm以上的Au或Pt族的情况下，HTST的结果变得良好(实施例I〜20，比较例1、2、5、7、9〜12)，低于Ippm则抗氧化性变低（比较例3、4、6、8)。其中，对于超过该50ppm的焊线，被覆层厚t即使为O. 09 μ m以下，也因球b变硬，确认到了在电极a上存在若干损坏（比较例1、7)。对于超过该IOOppm的焊线,被覆层厚t即使为O. 09 μ m以下，电极a上也产生损坏，在使用上有问题（比较例5、9、10)。

[0087] 对于P的添加，如果添加量为2ppm以上且低于lOppm，则为FAB稳定成为圆球状的良好的结果(实施例I〜20，比较例I〜5、7、8、10〜12)。另外，如果添加量为IOppm以上，则非常稳定地成为FAB形状良好的结果(实施例I、3〜9、11〜20，比较例I〜5、7、11、12)。另一方面，如果添加量低于2ppm则FAB形状变差（比较例6、9)，如果添加量超过50ppm，则即使被覆层厚度t为O. 09 μ m以下且Au或Pt族的添加量为50ppm以下，也确认到电极a上存在若干损坏(实施例1、5、16、20)。并且，如果添加量超过250ppm，则即使被覆层厚度t为O. 09 μ m以下且Au或Pt族的添加量为50ppm以下,球b也会变硬,可能确认到电极a的损坏（比较例3、4)。

[0088] 符号说明

[0089] W 焊线

[0090] I 芯材

[0091] 2被覆层

[0092] a集成电路元件的电极

[0093] b焊接球

[0094] c电路配线基板的导体配线

Claims (5)

1. 一种焊线，其特征在于，是用于通过球焊法将集成电路元件的电极（a)和电路配线基板的导体配线（c)进行连接的、线径（L) :12μπΓ50. 8μπι的焊线（W)， 其芯材（I)由为了提高抗氧化性而添加金或钼族中的至少I种以上并且为了提高电阻而添加了磷的纯度99. 9质量％以上的铜构成， 在该芯材（I)的外周整面形成有抗氧化性的钼或钯的厚度（t) :0. 02〜O. 09 μ m的被覆层（2)。
2.根据权利要求I所述的焊线，其特征在于，所述被覆层（2)的厚度（t)为O. 04〜O. 09 μ m。
3.根据权利要求I所述的焊线，其特征在于，所述被覆层（2)的厚度（t)为O. 05〜O. 09 μ m。
4.根据权利要求广3中任一项所述的焊线，其特征在于，所述磷的添加量为2〜250ppm,对于所述金或钼族中的至少I种而言,总添加量为I〜lOOppm。
5.根据权利要求f 3中任一项所述的焊线，其特征在于，所述磷的添加量为10〜50ppm,对于所述金或钼族中的至少I种而言，总添加量为I〜50ppm。
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