JP2009158931A - 半導体装置用ボンディングワイヤ - Google Patents
半導体装置用ボンディングワイヤ Download PDFInfo
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- JP2009158931A JP2009158931A JP2008295178A JP2008295178A JP2009158931A JP 2009158931 A JP2009158931 A JP 2009158931A JP 2008295178 A JP2008295178 A JP 2008295178A JP 2008295178 A JP2008295178 A JP 2008295178A JP 2009158931 A JP2009158931 A JP 2009158931A
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- Prior art keywords
- wire
- skin layer
- core material
- bonding
- bonding wire
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
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- C22C5/04—Alloys based on a platinum group metal
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
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- C22C5/06—Alloys based on silver
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- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L24/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/431—Pre-treatment of the preform connector
- H01L2224/4312—Applying permanent coating, e.g. in-situ coating
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/4501—Shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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Abstract
【解決手段】導電性金属からなる芯材と、該芯材の上に芯材とは異なる面心立方晶の金属を主成分とする表皮層を有する半導体装置用ボンディングワイヤであって、前記表皮層の表面における長手方向の結晶方位のうち<100>の占める割合が50%以上であることを特徴とする半導体装置用ボンディングワイヤ。
【選択図】なし
Description
Claims (14)
- 導電性金属からなる芯材と、前記芯材の上に該芯材とは異なる金属を主成分とする表皮層とを有する半導体装置用ボンディングワイヤであって、前記表皮層の金属が面心立方晶であって、前記表皮層の表面の結晶面における長手方向の結晶方位<hkl>の内、<111>の占める割合が50%以上であることを特徴とする半導体装置用ボンディングワイヤ。
- 前記表皮層の表面の結晶面における長手方向の結晶方位<hkl>の内、<111>と<100>との占める割合の総計が60%以上であることを特徴とする請求項1に記載の半導体装置用ボンディングワイヤ。
- 前記芯材の断面の結晶面における長手方向の結晶方位<hkl>の内、<111>と<100>との占める割合の総計が15%以上であることを特徴とする請求項1又は2に記載の半導体装置用ボンディングワイヤ。
- 前記芯材の断面の結晶面におけるワイヤ長手方向の結晶方位<hkl>の内、<111>と<100>との占める割合が30%以上であることを特徴とする請求項1〜3のいずれか1項に記載の半導体装置用ボンディングワイヤ。
- 前記表皮層の表面における結晶粒の平均サイズについて、円周方向の平均サイズに対する長手方向の平均サイズの比率が3以上であることを特徴とする請求項1〜4のいずれか1項に記載の半導体装置用ボンディングワイヤ。
- 前記表皮層の表面におけるワイヤ長手方向の結晶方位が<111>である結晶粒の面積が、ワイヤ表面の総面積に対する割合として30%以上であることを特徴とする請求項1〜5のいずれか1項に記載の半導体装置用ボンディングワイヤ。
- 前記表皮層を構成する主成分がPd、Pt、Ru、Agの内少なくとも1種であることを特徴とする請求項1〜6のいずれか1項に記載の半導体装置用ボンディングワイヤ。
- 前記芯材を構成する主成分がCu、Auの内少なくとも1種であることを特徴とする請求項1〜7のいずれか1項に記載の半導体装置用ボンディングワイヤ。
- 前記表皮層と前記芯材との間に、前記表皮層及び前記芯材を構成する主成分とは異なる成分からなる中間金属層を有することを特徴とする請求項1〜8のいずれか1項に記載の半導体装置用ボンディングワイヤ。
- 前記表皮層の厚さが0.005〜0.2μmの範囲であることを特徴とする請求項1〜9のいずれか1項に記載の半導体装置用ボンディングワイヤ。
- 前記表皮層と芯材の間に濃度勾配を有する拡散層を有することを特徴とする請求項1〜10のいずれか1項に記載の半導体装置用ボンディングワイヤ。
- 前記芯材を構成する主成分がCuで、B、Pd、Bi、P、Zrの1種以上を5〜300ppmの範囲で含有することを特徴とする請求項7〜11のいずれか1項に記載の半導体装置用ボンディングワイヤ。
- 前記芯材を構成する主成分がCuで、Pdを5〜10000ppmの範囲で含有し、前記表皮層を構成する主成分がPdまたはAgであることを特徴とする請求項7〜11のいずれか1項に記載の半導体装置用ボンディングワイヤ。
- 前記芯材を構成する主成分がAuで、Be、Ca、Ni、Pd、Ptの1種以上を5〜8000ppmの範囲で含有することを特徴とする請求項7〜11のいずれか1項に記載の半導体装置用ボンディングワイヤ。
Priority Applications (11)
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JP2008295178A JP4617375B2 (ja) | 2007-12-03 | 2008-11-19 | 半導体装置用ボンディングワイヤ |
US12/669,662 US8299356B2 (en) | 2007-12-03 | 2008-12-02 | Bonding wire for semiconductor devices |
MYPI2010000596A MY159518A (en) | 2007-12-03 | 2008-12-02 | Bonding wire for semiconductor devices |
KR1020097026296A KR101030384B1 (ko) | 2007-12-03 | 2008-12-02 | 반도체 장치용 본딩 와이어 |
KR1020117017997A KR101100564B1 (ko) | 2007-12-03 | 2008-12-02 | 반도체 장치용 본딩 와이어 |
PCT/JP2008/071899 WO2009072498A1 (ja) | 2007-12-03 | 2008-12-02 | 半導体装置用ボンディングワイヤ |
KR1020107024696A KR101383401B1 (ko) | 2007-12-03 | 2008-12-02 | 반도체 장치용 본딩 와이어 |
CN200880024022.4A CN101689519B (zh) | 2007-12-03 | 2008-12-02 | 半导体装置用接合引线 |
EP08858289.5A EP2200076B1 (en) | 2007-12-03 | 2008-12-02 | Bonding wire for semiconductor devices |
TW097146887A TWI533381B (zh) | 2007-12-03 | 2008-12-03 | Connection of semiconductor devices |
TW100127912A TW201207971A (en) | 2007-12-03 | 2008-12-03 | Bonding wire for semiconductor devices |
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JP2008295178A JP4617375B2 (ja) | 2007-12-03 | 2008-11-19 | 半導体装置用ボンディングワイヤ |
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JP2010238297A Division JP4772916B2 (ja) | 2007-12-03 | 2010-10-25 | 半導体装置用ボンディングワイヤ |
JP2010238296A Division JP5222340B2 (ja) | 2007-12-03 | 2010-10-25 | 半導体装置用ボンディングワイヤ |
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US (1) | US8299356B2 (ja) |
EP (1) | EP2200076B1 (ja) |
JP (1) | JP4617375B2 (ja) |
KR (3) | KR101030384B1 (ja) |
CN (1) | CN101689519B (ja) |
MY (1) | MY159518A (ja) |
TW (2) | TWI533381B (ja) |
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JPWO2011129256A1 (ja) * | 2010-04-14 | 2013-07-18 | タツタ電線株式会社 | ボンディングワイヤ |
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JP2011033600A (ja) * | 2009-08-06 | 2011-02-17 | Kobe Steel Ltd | 鋼板成形品の耐遅れ破壊性の評価方法 |
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KR101251011B1 (ko) * | 2011-08-23 | 2013-04-05 | 엠케이전자 주식회사 | 구리계 본딩 와이어 및 이를 포함하는 반도체 패키지 |
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Also Published As
Publication number | Publication date |
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US20100294532A1 (en) | 2010-11-25 |
CN101689519B (zh) | 2015-05-06 |
EP2200076A4 (en) | 2012-06-06 |
MY159518A (en) | 2017-01-13 |
KR20100013328A (ko) | 2010-02-09 |
TW200937546A (en) | 2009-09-01 |
EP2200076B1 (en) | 2016-09-28 |
KR101030384B1 (ko) | 2011-04-20 |
JP4617375B2 (ja) | 2011-01-26 |
TW201207971A (en) | 2012-02-16 |
KR101383401B1 (ko) | 2014-04-08 |
CN101689519A (zh) | 2010-03-31 |
WO2009072498A1 (ja) | 2009-06-11 |
KR20110098010A (ko) | 2011-08-31 |
TWI533381B (zh) | 2016-05-11 |
KR20100134719A (ko) | 2010-12-23 |
TWI364806B (ja) | 2012-05-21 |
EP2200076A1 (en) | 2010-06-23 |
US8299356B2 (en) | 2012-10-30 |
KR101100564B1 (ko) | 2011-12-29 |
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