AU6737300A - A wire for semiconductor and a manufacturing method thereof - Google Patents

A wire for semiconductor and a manufacturing method thereof

Info

Publication number
AU6737300A
AU6737300A AU67373/00A AU6737300A AU6737300A AU 6737300 A AU6737300 A AU 6737300A AU 67373/00 A AU67373/00 A AU 67373/00A AU 6737300 A AU6737300 A AU 6737300A AU 6737300 A AU6737300 A AU 6737300A
Authority
AU
Australia
Prior art keywords
semiconductor
wire
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU67373/00A
Inventor
Pan Ho Park
Sung Hyun Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CALVARY METAL TECH Co Ltd
Original Assignee
CALVARY METAL TECH CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020000042860A external-priority patent/KR100326280B1/en
Application filed by CALVARY METAL TECH CO Ltd filed Critical CALVARY METAL TECH CO Ltd
Publication of AU6737300A publication Critical patent/AU6737300A/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/18—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions
    • C23C10/20—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions only one element being diffused
    • C23C10/22—Metal melt containing the element to be diffused
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C6/00—Coating by casting molten material on the substrate
    • H—ELECTRICITY
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Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Metal Extraction Processes (AREA)
AU67373/00A 1999-10-16 2000-08-23 A wire for semiconductor and a manufacturing method thereof Abandoned AU6737300A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR9944902 1999-10-16
KR19990044902 1999-10-16
KR1020000042860A KR100326280B1 (en) 1999-10-16 2000-07-25 A wire for semiconductor and a manufacturing method thereof
KR0042860 2000-07-25
PCT/KR2000/000949 WO2001029889A1 (en) 1999-10-16 2000-08-23 A wire for semiconductor and a manufacturing method thereof

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JP4617375B2 (en) 2007-12-03 2011-01-26 新日鉄マテリアルズ株式会社 Bonding wires for semiconductor devices
US9059003B2 (en) * 2012-02-27 2015-06-16 Nippon Micrometal Corporation Power semiconductor device, method of manufacturing the device and bonding wire
CN109979687A (en) * 2019-04-23 2019-07-05 张裕仕 A kind of manufacture craft of fine silver & proof gold balance conductor
CN113136542B (en) * 2021-04-26 2023-08-15 河南机电职业学院 Preparation method of gold-coated silver bonding wire

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JPS6075572A (en) * 1983-09-29 1985-04-27 Seiko Epson Corp Manufacture of ornamental multicolor gold alloy
US5364706A (en) * 1990-07-20 1994-11-15 Tanaka Denshi Kogyo Kabushiki Kaisha Clad bonding wire for semiconductor device
KR950011640B1 (en) * 1992-03-12 1995-10-07 금성일렉트론주식회사 Structure of dram cell and fabricating method thereof

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WO2001029889A1 (en) 2001-04-26
JP3640925B2 (en) 2005-04-20
HK1053905A1 (en) 2003-11-07
JP2003512722A (en) 2003-04-02
CN1399795A (en) 2003-02-26
CN1175481C (en) 2004-11-10

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