AU5926800A - Semiconductor devices and process for manufacture - Google Patents

Semiconductor devices and process for manufacture

Info

Publication number
AU5926800A
AU5926800A AU59268/00A AU5926800A AU5926800A AU 5926800 A AU5926800 A AU 5926800A AU 59268/00 A AU59268/00 A AU 59268/00A AU 5926800 A AU5926800 A AU 5926800A AU 5926800 A AU5926800 A AU 5926800A
Authority
AU
Australia
Prior art keywords
manufacture
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU59268/00A
Inventor
Paul G. Apen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NANOCELL Inc
Original Assignee
NANOCELL Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NANOCELL Inc filed Critical NANOCELL Inc
Publication of AU5926800A publication Critical patent/AU5926800A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
AU59268/00A 1999-07-08 2000-07-10 Semiconductor devices and process for manufacture Abandoned AU5926800A (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US14287399P 1999-07-08 1999-07-08
US60142873 1999-07-08
US15229599P 1999-09-03 1999-09-03
US60152295 1999-09-03
US61180100A 2000-07-07 2000-07-07
US09611801 2000-07-07
PCT/US2000/018830 WO2001004954A1 (en) 1999-07-08 2000-07-10 Semiconductor devices and process for manufacture

Publications (1)

Publication Number Publication Date
AU5926800A true AU5926800A (en) 2001-01-30

Family

ID=27385869

Family Applications (1)

Application Number Title Priority Date Filing Date
AU59268/00A Abandoned AU5926800A (en) 1999-07-08 2000-07-10 Semiconductor devices and process for manufacture

Country Status (2)

Country Link
AU (1) AU5926800A (en)
WO (1) WO2001004954A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10112561C2 (en) * 2001-03-15 2003-12-18 Infineon Technologies Ag Process for producing porous organic layers adhering to a substrate
US9291752B2 (en) 2013-08-19 2016-03-22 3M Innovative Properties Company Retroreflecting optical construction
US9464179B2 (en) 2009-04-15 2016-10-11 3M Innovative Properties Company Process and apparatus for a nanovoided article
US10539722B2 (en) 2009-04-15 2020-01-21 3M Innovative Properties Company Optical film
KR101769171B1 (en) 2009-10-24 2017-08-17 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Light source and display system incorporating same
JP5869494B2 (en) 2009-12-08 2016-02-24 スリーエム イノベイティブ プロパティズ カンパニー Optical structure incorporating light guide and low refractive index film
JP5997132B2 (en) 2010-04-15 2016-09-28 スリーエム イノベイティブ プロパティズ カンパニー Retroreflective article and method for forming the same
KR20130092396A (en) 2010-04-15 2013-08-20 쓰리엠 이노베이티브 프로퍼티즈 캄파니 Retroreflective articles including optically active areas and optically inactive areas
MX341289B (en) 2010-04-15 2016-08-12 3M Innovative Properties Co Retroreflective articles including optically active areas and optically inactive areas.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178327A (en) * 1974-12-19 1979-12-11 The Dow Chemical Company Ar-halo-ar(t-alkyl)styrenes and polymers thereof
US4871619A (en) * 1983-11-30 1989-10-03 International Business Machines Corporation Electronic components comprising polymide dielectric layers
EP0155823B1 (en) * 1984-03-21 1989-07-26 Nihon Shinku Gijutsu Kabushiki Kaisha Improvements in or relating to the covering of substrates with synthetic resin films
JPS61108633A (en) * 1984-11-01 1986-05-27 Res Dev Corp Of Japan Super-thin polyimine monomolecular film and its production
EP0351092B1 (en) * 1988-06-28 1994-06-08 Matsushita Electric Industrial Co., Ltd. Method for the formation of monomolecular adsorption films or built-up films of monomolecular layers using silane compounds having an acetylene or diacetylene bond
GB2328443B (en) * 1997-08-21 2001-09-05 Reckitt & Colmann Prod Ltd In situ formation of pharmaceutically acceptable polymeric material

Also Published As

Publication number Publication date
WO2001004954A1 (en) 2001-01-18

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase