KR102167478B1 - 반도체 장치용 Cu 합금 본딩 와이어 - Google Patents
반도체 장치용 Cu 합금 본딩 와이어 Download PDFInfo
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- KR102167478B1 KR102167478B1 KR1020207006695A KR20207006695A KR102167478B1 KR 102167478 B1 KR102167478 B1 KR 102167478B1 KR 1020207006695 A KR1020207006695 A KR 1020207006695A KR 20207006695 A KR20207006695 A KR 20207006695A KR 102167478 B1 KR102167478 B1 KR 102167478B1
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- wire
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H01L24/45—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- H01L2224/45147—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
- H10W72/01565—Thermally treating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims (6)
- 반도체 장치용 Cu 합금 본딩 와이어이며, 와이어 표면의 결정 방위 중, 와이어 중심축을 포함하는 하나의 평면에 수직인 방향에 대해 각도 차가 15도 이하인 <110> 결정 방위와 <111> 결정 방위의 존재 비율의 합계가, 평균 면적률로 40% 이상 90% 이하인 것을 특징으로 하는 반도체 장치용 Cu 합금 본딩 와이어.
- 제1항에 있어서,
상기 와이어 표면의 결정 방위 중, 상기 와이어 중심축 방향에 대해 각도 차가 15도 이하인 <100> 결정 방위의 존재 비율이, 평균 면적률로 30% 이상 100% 이하인 것을 특징으로 하는 반도체 장치용 Cu 합금 본딩 와이어. - 제1항 또는 제2항에 있어서,
상기 와이어 중심축에 평행인 방향의 단면에 있어서의 결정 방위 중, 상기 와이어 중심축 방향에 대해 각도 차가 15도 이하인 <111> 결정 방위와 <100> 결정 방위의 존재 비율의 합계가, 평균 면적률로 25% 이상 100% 이하인 것을 특징으로 하는 반도체 장치용 Cu 합금 본딩 와이어. - 제1항 또는 제2항에 있어서,
Ni, Pd, Pt, Au 중 1종 이상을 총계로 0.01질량% 이상 1.5질량% 이하 포함하고, 잔부가 Cu 및 불가피 불순물인 것을 특징으로 하는 반도체 장치용 Cu 합금 본딩 와이어. - 제1항 또는 제2항에 있어서,
P, In, Ga, Ge, Ag 중 1종 이상을 총계로 0.001질량% 이상 0.75질량% 이하 포함하고, 잔부가 Cu 및 불가피 불순물인 것을 특징으로 하는 반도체 장치용 Cu 합금 본딩 와이어. - 제4항에 있어서,
또한 P, In, Ga, Ge, Ag 중 1종 이상을 총계로 0.001질량% 이상 0.75질량% 이하 포함하고, 잔부가 Cu 및 불가피 불순물인 것을 특징으로 하는 반도체 장치용 Cu 합금 본딩 와이어.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017154771 | 2017-08-09 | ||
| JPJP-P-2017-154771 | 2017-08-09 | ||
| PCT/JP2018/029589 WO2019031498A1 (ja) | 2017-08-09 | 2018-08-07 | 半導体装置用Cu合金ボンディングワイヤ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200039726A KR20200039726A (ko) | 2020-04-16 |
| KR102167478B1 true KR102167478B1 (ko) | 2020-10-19 |
Family
ID=65272355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207006695A Active KR102167478B1 (ko) | 2017-08-09 | 2018-08-07 | 반도체 장치용 Cu 합금 본딩 와이어 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10991672B2 (ko) |
| EP (1) | EP3667710B1 (ko) |
| JP (1) | JP6618662B2 (ko) |
| KR (1) | KR102167478B1 (ko) |
| CN (1) | CN111033706B (ko) |
| PH (1) | PH12020500284B1 (ko) |
| SG (1) | SG11202001124YA (ko) |
| TW (1) | TWI702298B (ko) |
| WO (1) | WO2019031498A1 (ko) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102167478B1 (ko) | 2017-08-09 | 2020-10-19 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 반도체 장치용 Cu 합금 본딩 와이어 |
| EP4109498A4 (en) * | 2020-02-18 | 2023-11-08 | NIPPON STEEL Chemical & Material Co., Ltd. | COPPER ALLOY CONNECTION WIRE FOR SEMICONDUCTOR DEVICE |
| CN115176336A (zh) * | 2020-02-21 | 2022-10-11 | 日铁新材料股份有限公司 | 铜接合线 |
| CN115280475B (zh) | 2020-03-13 | 2026-01-13 | 日铁新材料股份有限公司 | Al接合线 |
| CN115315793A (zh) | 2020-03-25 | 2022-11-08 | 日铁新材料股份有限公司 | Al接合线 |
| TWI845654B (zh) * | 2020-03-30 | 2024-06-21 | 日商日鐵新材料股份有限公司 | Al接合線 |
| CN117038618A (zh) * | 2021-06-25 | 2023-11-10 | 日铁新材料股份有限公司 | 半导体装置用接合线 |
| WO2022270050A1 (ja) * | 2021-06-25 | 2022-12-29 | 日鉄マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
| EP4361301B1 (en) * | 2021-06-25 | 2026-05-06 | Nippon Micrometal Corporation | Bonding wire for semiconductor devices |
| DE112022001995T5 (de) * | 2021-06-25 | 2024-01-25 | Nippon Micrometal Corporation | Bonddraht für Halbleitervorrichtungen |
| CN117529802A (zh) * | 2021-06-25 | 2024-02-06 | 日铁新材料股份有限公司 | 半导体装置用接合线 |
| EP4361298A4 (en) * | 2021-06-25 | 2026-02-11 | Nippon Micrometal Corp | CONNECTING WIRE FOR SEMICONDUCTOR DEVICES |
| JP7600474B1 (ja) * | 2022-12-05 | 2024-12-16 | 日鉄ケミカル&マテリアル株式会社 | Al接続材 |
| JP7600475B1 (ja) * | 2022-12-05 | 2024-12-16 | 日鉄ケミカル&マテリアル株式会社 | Al接続材 |
| CN118660981A (zh) * | 2022-12-05 | 2024-09-17 | 日铁化学材料株式会社 | Al合金接合线 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017045924A (ja) | 2015-08-28 | 2017-03-02 | 田中電子工業株式会社 | 銅合金ボンディングワイヤ |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3300684B2 (ja) | 1999-07-08 | 2002-07-08 | 清仁 石田 | 形状記憶特性及び超弾性を有する銅系合金、それからなる部材ならびにそれらの製造方法 |
| JP4285526B2 (ja) * | 2006-10-26 | 2009-06-24 | 日立電線株式会社 | 圧延銅箔およびその製造方法 |
| JP4617375B2 (ja) * | 2007-12-03 | 2011-01-26 | 新日鉄マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
| KR101707244B1 (ko) * | 2009-07-30 | 2017-02-15 | 신닛테츠스미킹 마테리알즈 가부시키가이샤 | 반도체용 본딩 와이어 |
| JP5117602B1 (ja) * | 2011-08-18 | 2013-01-16 | 古河電気工業株式会社 | たわみ係数が低く、曲げ加工性に優れる銅合金板材 |
| CN103311136A (zh) * | 2012-03-06 | 2013-09-18 | 深圳赛意法微电子有限公司 | 基于bga封装的铜线焊接装置及铜线焊接实现方法 |
| JP5376413B1 (ja) | 2013-01-25 | 2013-12-25 | Toto株式会社 | ボンディングキャピラリ |
| JP5747970B2 (ja) * | 2013-10-10 | 2015-07-15 | 三菱マテリアル株式会社 | ボンディングワイヤ用銅素線 |
| CN106164306B (zh) * | 2014-03-31 | 2020-03-17 | 古河电气工业株式会社 | 铜合金线材及其制造方法 |
| EP2993693B1 (en) * | 2014-03-31 | 2018-06-06 | Nippon Micrometal Corporation | Bonding wire for use with semiconductor devices and method for manufacturing said bonding wire |
| JP6516465B2 (ja) | 2014-12-17 | 2019-05-22 | 日鉄ケミカル&マテリアル株式会社 | 半導体装置用ボンディングワイヤ |
| US10032741B2 (en) * | 2015-02-26 | 2018-07-24 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
| WO2016189752A1 (ja) * | 2015-05-26 | 2016-12-01 | 日鉄住金マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
| SG11201604432SA (en) * | 2015-06-15 | 2017-01-27 | Nippon Micrometal Corp | Bonding wire for semiconductor device |
| KR101758038B1 (ko) | 2015-08-12 | 2017-07-13 | 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
| JP6047214B1 (ja) | 2015-11-02 | 2016-12-21 | 田中電子工業株式会社 | ボールボンディング用貴金属被覆銅ワイヤ |
| KR102167478B1 (ko) | 2017-08-09 | 2020-10-19 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 반도체 장치용 Cu 합금 본딩 와이어 |
-
2018
- 2018-08-07 KR KR1020207006695A patent/KR102167478B1/ko active Active
- 2018-08-07 JP JP2019535670A patent/JP6618662B2/ja active Active
- 2018-08-07 SG SG11202001124YA patent/SG11202001124YA/en unknown
- 2018-08-07 CN CN201880051714.1A patent/CN111033706B/zh active Active
- 2018-08-07 EP EP18844284.2A patent/EP3667710B1/en active Active
- 2018-08-07 WO PCT/JP2018/029589 patent/WO2019031498A1/ja not_active Ceased
- 2018-08-07 US US16/637,653 patent/US10991672B2/en active Active
- 2018-08-09 TW TW107127754A patent/TWI702298B/zh active
-
2020
- 2020-02-07 PH PH12020500284A patent/PH12020500284B1/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017045924A (ja) | 2015-08-28 | 2017-03-02 | 田中電子工業株式会社 | 銅合金ボンディングワイヤ |
Also Published As
| Publication number | Publication date |
|---|---|
| US20200279824A1 (en) | 2020-09-03 |
| TW201920701A (zh) | 2019-06-01 |
| EP3667710B1 (en) | 2022-01-05 |
| PH12020500284A1 (en) | 2021-01-25 |
| WO2019031498A1 (ja) | 2019-02-14 |
| JP6618662B2 (ja) | 2019-12-11 |
| SG11202001124YA (en) | 2020-03-30 |
| TWI702298B (zh) | 2020-08-21 |
| CN111033706B (zh) | 2021-05-25 |
| PH12020500284B1 (en) | 2021-01-25 |
| US10991672B2 (en) | 2021-04-27 |
| EP3667710A4 (en) | 2021-06-02 |
| KR20200039726A (ko) | 2020-04-16 |
| JPWO2019031498A1 (ja) | 2020-01-09 |
| EP3667710A1 (en) | 2020-06-17 |
| CN111033706A (zh) | 2020-04-17 |
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