SG11202001124YA - Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE - Google Patents
Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICEInfo
- Publication number
- SG11202001124YA SG11202001124YA SG11202001124YA SG11202001124YA SG11202001124YA SG 11202001124Y A SG11202001124Y A SG 11202001124YA SG 11202001124Y A SG11202001124Y A SG 11202001124YA SG 11202001124Y A SG11202001124Y A SG 11202001124YA SG 11202001124Y A SG11202001124Y A SG 11202001124YA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- bonding wire
- alloy bonding
- alloy
- wire
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017154771 | 2017-08-09 | ||
| PCT/JP2018/029589 WO2019031498A1 (ja) | 2017-08-09 | 2018-08-07 | 半導体装置用Ｃｕ合金ボンディングワイヤ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202001124YA true SG11202001124YA (en) | 2020-03-30 |
Family
ID=65272355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202001124YA SG11202001124YA (en) | 2017-08-09 | 2018-08-07 | Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10991672B2 (ko) |
| EP (1) | EP3667710B1 (ko) |
| JP (1) | JP6618662B2 (ko) |
| KR (1) | KR102167478B1 (ko) |
| CN (1) | CN111033706B (ko) |
| PH (1) | PH12020500284A1 (ko) |
| SG (1) | SG11202001124YA (ko) |
| TW (1) | TWI702298B (ko) |
| WO (1) | WO2019031498A1 (ko) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3667710B1 (en) | 2017-08-09 | 2022-01-05 | NIPPON STEEL Chemical & Material Co., Ltd. | Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE |
| EP4109498A4 (en) * | 2020-02-18 | 2023-11-08 | NIPPON STEEL Chemical & Material Co., Ltd. | BONDING WIRE MADE OF CU ALLOY FOR SEMICONDUCTOR COMPONENT |
| KR20240026928A (ko) * | 2021-06-25 | 2024-02-29 | 닛데쓰마이크로메탈가부시키가이샤 | 반도체 장치용 본딩 와이어 |
| EP4361299A1 (en) * | 2021-06-25 | 2024-05-01 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
| WO2022270050A1 (ja) * | 2021-06-25 | 2022-12-29 | 日鉄マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
| JP7157280B1 (ja) * | 2021-06-25 | 2022-10-19 | 日鉄マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
| KR20240026927A (ko) * | 2021-06-25 | 2024-02-29 | 닛데쓰마이크로메탈가부시키가이샤 | 반도체 장치용 본딩 와이어 |
| CN117038618A (zh) * | 2021-06-25 | 2023-11-10 | 日铁新材料股份有限公司 | 半导体装置用接合线 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3300684B2 (ja) * | 1999-07-08 | 2002-07-08 | 清仁 石田 | 形状記憶特性及び超弾性を有する銅系合金、それからなる部材ならびにそれらの製造方法 |
| JP4285526B2 (ja) * | 2006-10-26 | 2009-06-24 | 日立電線株式会社 | 圧延銅箔およびその製造方法 |
| JP4617375B2 (ja) * | 2007-12-03 | 2011-01-26 | 新日鉄マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
| KR101707244B1 (ko) * | 2009-07-30 | 2017-02-15 | 신닛테츠스미킹 마테리알즈 가부시키가이샤 | 반도체용 본딩 와이어 |
| JP5117602B1 (ja) * | 2011-08-18 | 2013-01-16 | 古河電気工業株式会社 | たわみ係数が低く、曲げ加工性に優れる銅合金板材 |
| CN103311136A (zh) * | 2012-03-06 | 2013-09-18 | 深圳赛意法微电子有限公司 | 基于bga封装的铜线焊接装置及铜线焊接实现方法 |
| JP5376413B1 (ja) | 2013-01-25 | 2013-12-25 | Ｔｏｔｏ株式会社 | ボンディングキャピラリ |
| JP5747970B2 (ja) * | 2013-10-10 | 2015-07-15 | 三菱マテリアル株式会社 | ボンディングワイヤ用銅素線 |
| CN105324838B (zh) * | 2014-03-31 | 2016-10-19 | 日铁住金新材料股份有限公司 | 半导体装置用接合线及其制造方法 |
| KR101932828B1 (ko) * | 2014-03-31 | 2018-12-26 | 후루카와 덴키 고교 가부시키가이샤 | 구리합금선재 및 그 제조방법 |
| JP6516465B2 (ja) | 2014-12-17 | 2019-05-22 | 日鉄ケミカル＆マテリアル株式会社 | 半導体装置用ボンディングワイヤ |
| EP3086362B1 (en) * | 2015-02-26 | 2023-11-22 | Nippon Micrometal Corporation | Bonding wire for semiconductor devices |
| WO2016189752A1 (ja) * | 2015-05-26 | 2016-12-01 | 日鉄住金マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
| US10137534B2 (en) * | 2015-06-15 | 2018-11-27 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
| US9887172B2 (en) * | 2015-08-12 | 2018-02-06 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
| JP6410692B2 (ja) | 2015-08-28 | 2018-10-24 | 田中電子工業株式会社 | 銅合金ボンディングワイヤ |
| JP6047214B1 (ja) | 2015-11-02 | 2016-12-21 | 田中電子工業株式会社 | ボールボンディング用貴金属被覆銅ワイヤ |
| EP3667710B1 (en) | 2017-08-09 | 2022-01-05 | NIPPON STEEL Chemical & Material Co., Ltd. | Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE |
-
2018
- 2018-08-07 EP EP18844284.2A patent/EP3667710B1/en active Active
- 2018-08-07 SG SG11202001124YA patent/SG11202001124YA/en unknown
- 2018-08-07 WO PCT/JP2018/029589 patent/WO2019031498A1/ja unknown
- 2018-08-07 CN CN201880051714.1A patent/CN111033706B/zh active Active
- 2018-08-07 KR KR1020207006695A patent/KR102167478B1/ko active IP Right Grant
- 2018-08-07 US US16/637,653 patent/US10991672B2/en active Active
- 2018-08-07 JP JP2019535670A patent/JP6618662B2/ja active Active
- 2018-08-09 TW TW107127754A patent/TWI702298B/zh active
-
2020
- 2020-02-07 PH PH12020500284A patent/PH12020500284A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20200279824A1 (en) | 2020-09-03 |
| JP6618662B2 (ja) | 2019-12-11 |
| EP3667710B1 (en) | 2022-01-05 |
| EP3667710A4 (en) | 2021-06-02 |
| KR102167478B1 (ko) | 2020-10-19 |
| CN111033706B (zh) | 2021-05-25 |
| EP3667710A1 (en) | 2020-06-17 |
| PH12020500284B1 (en) | 2021-01-25 |
| WO2019031498A1 (ja) | 2019-02-14 |
| PH12020500284A1 (en) | 2021-01-25 |
| KR20200039726A (ko) | 2020-04-16 |
| CN111033706A (zh) | 2020-04-17 |
| US10991672B2 (en) | 2021-04-27 |
| JPWO2019031498A1 (ja) | 2020-01-09 |
| TW201920701A (zh) | 2019-06-01 |
| TWI702298B (zh) | 2020-08-21 |
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