SG11201704914QA - Bonding wire for semiconductor device - Google Patents

Bonding wire for semiconductor device

Info

Publication number
SG11201704914QA
SG11201704914QA SG11201704914QA SG11201704914QA SG11201704914QA SG 11201704914Q A SG11201704914Q A SG 11201704914QA SG 11201704914Q A SG11201704914Q A SG 11201704914QA SG 11201704914Q A SG11201704914Q A SG 11201704914QA SG 11201704914Q A SG11201704914Q A SG 11201704914QA
Authority
SG
Singapore
Prior art keywords
semiconductor device
bonding wire
bonding
wire
semiconductor
Prior art date
Application number
SG11201704914QA
Inventor
Tetsuya Oyamada
Tomohiro Uno
Daizo Oda
Takashi Yamada
Original Assignee
Nippon Steel & Sumikin Mat Co
Nippon Micrometal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel & Sumikin Mat Co, Nippon Micrometal Corp filed Critical Nippon Steel & Sumikin Mat Co
Publication of SG11201704914QA publication Critical patent/SG11201704914QA/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227Rods, wires
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0255Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
    • B23K35/0261Rods, electrodes, wires
    • B23K35/0272Rods, electrodes, wires with more than one layer of coating or sheathing material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/30Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006Ag as the principal constituent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/32Selection of soldering or welding materials proper with the principal constituent melting at more than 1550 degrees C
    • B23K35/322Selection of soldering or welding materials proper with the principal constituent melting at more than 1550 degrees C a Pt-group metal as principal constituent
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    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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    • C22C5/06Alloys based on silver
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JP6869919B2 (en) * 2018-04-02 2021-05-12 田中電子工業株式会社 Precious metal-coated silver wire for ball bonding and its manufacturing method, and semiconductor device using precious metal-coated silver wire for ball bonding and its manufacturing method
JP6807426B2 (en) 2019-04-12 2021-01-06 田中電子工業株式会社 Gold-coated silver bonding wire and its manufacturing method, and semiconductor device and its manufacturing method
WO2021100583A1 (en) * 2019-11-22 2021-05-27 日鉄ケミカル&マテリアル株式会社 Ag ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
EP4135012A1 (en) * 2020-04-07 2023-02-15 Nippon Micrometal Corporation Ag alloy bonding wire for semiconductor device and semiconductor device
CN112207481A (en) * 2020-09-09 2021-01-12 中山大学 Low-temperature pressureless sintering micron silver soldering paste and preparation method and application thereof
CN112687649B (en) * 2020-12-25 2024-03-12 中国科学院宁波材料技术与工程研究所 Corrosion-resistant and oxidation-resistant coating on surface of bonding wire as well as preparation method and application thereof
TWI778583B (en) 2021-04-16 2022-09-21 樂金股份有限公司 Silver alloy wire
JP7142761B1 (en) 2021-12-13 2022-09-27 タツタ電線株式会社 Bonding wire and semiconductor device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0479245A (en) * 1990-07-20 1992-03-12 Tanaka Denshi Kogyo Kk Bonding wire for semiconductor element
JP2001176912A (en) * 1999-12-16 2001-06-29 Noge Denki Kogyo:Kk Silver wire bonding wire filmed with gold
JP2003045909A (en) * 2001-07-31 2003-02-14 Tanaka Electronics Ind Co Ltd Bonding wire for connecting electronic circuit
US7524351B2 (en) * 2004-09-30 2009-04-28 Intel Corporation Nano-sized metals and alloys, and methods of assembling packages containing same
JP4722671B2 (en) * 2005-10-28 2011-07-13 新日鉄マテリアルズ株式会社 Bonding wires for semiconductor devices
KR101001700B1 (en) * 2007-03-30 2010-12-15 엠케이전자 주식회사 Ag-base alloy for semiconductor package
WO2010106851A1 (en) * 2009-03-17 2010-09-23 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
KR101707244B1 (en) * 2009-07-30 2017-02-15 신닛테츠스미킹 마테리알즈 가부시키가이샤 Bonding wire for semiconductor
JP2013033811A (en) 2011-08-01 2013-02-14 Tatsuta Electric Wire & Cable Co Ltd Ball bonding wire
US20150322586A1 (en) * 2011-11-26 2015-11-12 Microbonds Inc. Bonding wire and process for manufacturing a bonding wire
US8940403B2 (en) 2012-01-02 2015-01-27 Wire Technology Co., Ltd. Alloy wire and methods for manufacturing the same
KR101513493B1 (en) 2013-02-19 2015-04-20 엠케이전자 주식회사 Silver alloy bonding wire
TWI536397B (en) * 2013-02-21 2016-06-01 Silver alloy soldered wire for semiconductor packages

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US20170365576A1 (en) 2017-12-21
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EP3236490B1 (en) 2023-10-11
CN107004613A (en) 2017-08-01

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