KR101001700B1 - Ag-base alloy for semiconductor package - Google Patents

Ag-base alloy for semiconductor package Download PDF

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KR101001700B1
KR101001700B1 KR20070031998A KR20070031998A KR101001700B1 KR 101001700 B1 KR101001700 B1 KR 101001700B1 KR 20070031998 A KR20070031998 A KR 20070031998A KR 20070031998 A KR20070031998 A KR 20070031998A KR 101001700 B1 KR101001700 B1 KR 101001700B1
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silver
silver alloy
alloy wire
wire
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KR20080089035A (en
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문정탁
조종수
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엠케이전자 주식회사
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/06Alloys based on silver
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/06Alloys based on silver
    • C22C5/08Alloys based on silver with copper as the next major constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
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    • H01BASIC ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/438Post-treatment of the connector
    • H01L2224/43848Thermal treatments, e.g. annealing, controlled cooling
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]

Abstract

Silver-bonded wires for semiconductor packages with high reliability and low manufacturing costs are provided for wire bonding. The silver alloy wire for a semiconductor package is 0.05 to about one or more first additive components selected from the group of platinum (Pt), palladium (Pd), rhodium (Rh), osmium (Os), gold (Au) and nickel (Ni). 5% by weight, the remainder may be made of silver (Ag).

Description

Silver alloy wire for semiconductor package {Ag-base alloy for semiconductor package}

1 is a graph showing high humidity reliability of gold wire and silver wire.

The present invention relates to a semiconductor package, and more particularly to a silver alloy wire used for wire bonding.

In a semiconductor package, the semiconductor chip may be electrically connected to the package substrate using wire bonding. In a conventional semiconductor package, the aluminum pad of the semiconductor chip and the package substrate are bonded using gold wires. Gold has been widely used as a bonding wire because of its high chemical stability and high electrical conductivity. However, in order to meet the demand for continuous reduction of manufacturing costs in the semiconductor industry and to solve the cost increase problem caused by the recent increase in gold prices, new wires are required to replace gold.

For example, Japanese Patent Application Publication Nos. 1998-326803, 1999-67811, 1999-67812, and 2000-150562 disclose gold-silver alloy wires. However, these gold-silver alloy wires still contain gold of high composition, which limits the cost reduction.

As another example, silver (Ag) wire, which is 1/30 to 1/50 cheaper than gold (Au), may be considered. However, silver (Ag) wire has a problem in reliability when bonding with an aluminum (Al) pad. In particular, as shown in FIG. 1, in the high humidity reliability test, corrosion and chip cracks are generated at the bonding interface between the silver (Ag) wire and the aluminum (Al) pad to significantly reduce the bonding strength. Can be. High humidity reliability was tested using a pressure cooker test (PCT). Although the gold (Au) wire had almost no change in the bonding strength even when the PCT time was 96 hours, the silver (Ag) wire showed that the bonding strength was almost zero even when the PCT time was only 24 hours.

Furthermore, there exists a problem that silver wire is bad in plastic workability, and a production yield falls. Accordingly, a large amount of heat treatment is required in the silver wire manufacturing step, resulting in a high manufacturing cost.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a silver alloy wire for a semiconductor package having high reliability and low manufacturing cost in wire bonding.

Silver alloy wire for a semiconductor package of one embodiment of the present invention for achieving the above technical problem is platinum (Pt), palladium (Pd), rhodium (Rh), osmium (Os), gold (Au) and nickel (Ni) It may contain from 0.05 to 5% by weight of at least one first additive component selected from the group of, the remainder may be made of silver (Ag).

Silver alloy wire for a semiconductor package according to another aspect of the present invention for achieving the above technical problem, copper (Cu), beryllium (Be), calcium (Ca), magnesium (Mg), barium (Ba), lanthanum (La) 3 to 5% by weight of at least one second additive component selected from the group consisting of (Ce) and yttrium (Y), and the remainder may be composed of silver (Ag) and unavoidable impurities.

The silver alloy wire for semiconductor packages which concerns on another form of this invention for achieving the said technical subject contains 0.05 to 5 weight% of said 1st additive components, and 3 weight ppm-5 weight% of said 2nd additive components And the remainder may be composed of silver (Ag) and unavoidable impurities.

Hereinafter, the present invention will be described in detail by explaining preferred embodiments of the present invention. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you.

Wires for semiconductor packages according to embodiments of the present invention are used to bond a semiconductor chip with a package substrate. In this sense, the semiconductor package wire according to the embodiments of the present invention may be referred to as a bonding wire.

The silver alloy wire according to the embodiments of the present invention may be formed by alloying an additive component with pure silver (Ag) by a predetermined amount. However, silver alloy wires may contain unavoidable impurities in addition to silver (Ag) and additives, even if not specifically mentioned. This is because even pure silver (Ag) may contain a small amount of impurities in the refining step, and a small amount of impurities may be contained in the silver alloy in the alloying step. However, unavoidable impurities may not normally be mentioned because their amounts are very small and inconsistent with respect to the added ingredients. Therefore, inclusion of such unavoidable impurities does not limit the scope of the present invention.

Silver alloy wire according to an embodiment of the present invention, one or more selected from the group of platinum (Pt), palladium (Pd), rhodium (Rh), osmium (Os), gold (Au) and nickel (Ni) It may contain one additive component and the remainder may be made of silver (Ag). For example, the silver alloy wire may contain 0.05 to 5% by weight of the first additive component, and the remainder may be made of silver (Ag).

The first additive component can contribute to improving the high humidity reliability of the silver alloy wire. The first additive component can suppress oxide film formation and galvanic corrosion at the bonding interface between the silver alloy wire and the pad of the semiconductor chip. Accordingly, chip crack formation at the bonding interface can be suppressed, and bonding strength can be improved.

However, when the first additive component is less than 0.05% by weight, the high humidity reliability improvement effect of the semiconductor package using the silver alloy wire may be insufficient. For example, chip cracks may occur at the bonding interface between the silver alloy wire and the pad, thereby reducing the bonding force between the two. In addition, when the first additive component is more than 5% by weight, the electrical resistance of the silver alloy wire increases, and free air balls of the silver alloy wire may be cured at the bonding interface to generate chip cracks. Accordingly, the reliability of the electrical connection between the wire and the semiconductor chip can be greatly reduced.

Silver alloy wire according to another embodiment of the present invention, copper (Cu), beryllium (Be), calcium (Ca), magnesium (Mg), barium (Ba), lanthanum (La), cerium (Ce) and yttrium ( It may contain one or more second additive components selected from the group of Y), the remainder may be made of silver (Ag).

For example, the second additive component may comprise 0.1 to 5 weight percent copper (Cu). As another example, the second additive component may include at least one selected from the group consisting of beryllium (Be), calcium (Ca), magnesium (Mg), barium (Ba), lanthanum (La), cerium (Ce), and yttrium (Y). It may include 3 to 100 ppm by weight. As another example, the second additive component contains 0.1 to 5% by weight of copper (Cu), beryllium (Be), calcium (Ca), magnesium (Mg), barium (Ba), lanthanum (La), cerium (Ce). ) And 3 to 100 ppm by weight of one or more selected from the group of yttrium (Y).

The second additive component may contribute to the improvement in workability and the tensile strength rather than the high humidity reliability of the silver alloy wire. Accordingly, the number of heat treatments in the silver alloy wire manufacturing step can be greatly reduced as compared with the conventional, and as a result, the manufacturing cost can be greatly reduced.

When content of copper (Cu) is less than 0.1 weight%, the workability improvement effect may be inadequate. In addition, when the content of copper (Cu) is more than 5% by weight, the electrical resistance of the silver alloy wire may be increased, and chip crack may be caused to reduce the bonding property.

When the content of beryllium (Be), calcium (Ca), magnesium (Mg), barium (Ba), lanthanum (La), cerium (Ce) and yttrium (Y) is 3 ppm by weight or less, the effect of improving workability may be insignificant. have. In addition, when the content of beryllium (Be), calcium (Ca), magnesium (Mg), barium (Ba), lanthanum (La), cerium (Ce) and yttrium (Y) is more than 100 ppm by weight, it is free at the bonding interface. Solidification shrinkage (dimple) is generated when forming the air ball can significantly reduce the bonding force.

The silver alloy wire according to another embodiment of the present invention may contain both the first and second additive components described above, and the remainder may be made of silver (Ag). In this case, high humidity reliability and workability of the silver alloy wire can be improved.

Hereinafter, with reference to the experimental and comparative examples, the effect of the additive components on the properties of the silver alloy wire will be described in more detail.

Figure 112007025242006-pat00001

Figure 112007025242006-pat00002

Table 1 shows the silver alloy wires depending on the content of the additive components. Experimental Examples 1-16 show the silver alloy wire containing 1 type of 1st addition component, Experimental Examples 17-32 show the silver alloy wire containing 1st type of 2nd additive component, Experimental Examples 33-41 are The silver alloy wire which contains 2 or more types of 1st addition components and 2 or more types of 2nd addition components, respectively, or contains together a 1st addition component and a 2nd addition component is shown. Comparative Examples 1 to 3 represent silver alloy wires containing other additive components in addition to the first additive component and the second additive component.

Table 2 shows the experimental results for the properties of the silver alloy wire of Table 1. In Table 2, the high humidity reliability was expressed as bond strength (BPT value) in the pressure cooker test (PCT). The silver alloy wire had a diameter of about 30 μm and the PCT was run at 121 ° C. for about 96 hours. In the reliability of the joint strength,? Denotes a very good state,? Denotes a good state,? Denotes a normal state, and X denotes a bad state. The workability was measured by the number of disconnections per kilometer of silver alloy wire, so the lower the better the properties. Shelf life tests indicated the time required for the formation of 100 nm thick oxide film on the silver alloy wire, indicating that the larger the better the characteristic.

Referring to Table 1 and Table 2, in Experimental Examples 1 to 7, it can be seen that the effect of the content of palladium (Pd) as the first additive component on the properties of the silver alloy wire. In Experimental Examples 2-5 whose content of palladium is 0.05-5 weight%, it turns out that the reliability of silver alloy wire is very excellent and workability is also excellent compared with Comparative Examples 1-3. However, in Experimental Example 1 in which the content of palladium is 0.01% by weight, the bond strength is poor and shelf life is reduced, and in Experimental Examples 6 and 7 in which the palladium content is 10 and 30% by weight, cracks can be seen.

In Experimental Examples 8 to 16, the effect of one content of platinum (Pt), rhodium (Rh), osmium (Os), gold (Au) and nickel (Ni) as the first additive component on the properties of the silver alloy wire It can be seen. In Experimental Examples 8-12 and 14-16 whose content of a 1st addition component is 0.5-5 weight%, it turns out that the silver alloy wire is very reliable and the workability is also excellent compared with Comparative Examples 1-3. On the other hand, in Experimental Example 13 in which the content of nickel (Ni) was 0.01% by weight, it was found that the bonding strength was bad.

Therefore, from these experimental results, the first additive components palladium (Pd), platinum (Pt), rhodium (Rh), osmium (Os), gold (Au) and nickel (Ni) have a similar effect on the properties of the silver alloy wire You can see that it is crazy. Therefore, the experimental results of palladium (Pd) and nickel (Ni) can be similarly applied to platinum (Pt), rhodium (Rh), osmium (Os) and gold (Au).

In Experimental Examples 17 to 21, the effect of the copper (Cu) as the second additive component on the properties of the silver alloy wire can be seen. In Experimental Examples 18 to 20 having a copper (Cu) content of 0.1 to 5% by weight, the workability was greatly improved compared to Comparative Examples 1 to 3, and furthermore, it was found that slightly improved compared to Experimental Examples 1 to 16. However, in Experimental Example 17 having a copper (Cu) content of 0.05% by weight, the improvement of workability was insignificant, and in Experimental Example 21 having a copper (Cu) content of 10% by weight, the electrical resistivity increased and chip cracks occurred. .

In Experimental Examples 22 to 26, the effect of calcium (Ca) as the second additive component on the properties of the silver alloy wire can be seen. In Experimental Examples 23 to 25 having a calcium (Ca) content of 3 to 100 ppm by weight, the workability was greatly improved compared to Comparative Examples 1 to 3, and furthermore, it was found that slightly improved compared to Experimental Examples 1 to 16. However, in Experimental Example 22 having a calcium (Ca) content of 1 ppm by weight, it was found that the electrical resistivity increased and chip cracks occurred. In Experimental Example 26 with a calcium (Ca) content of 500% by weight, it was found that chip cracks occurred and shrinkage holes occurred in the free air ball.

 In Experimental Examples 27 to 32, the content of beryllium (Be), magnesium (Mg), barium (Ba), lanthanum (La), cerium (Ce) and yttrium (Y) as the second additive components was determined by the characteristics of the silver alloy wire. The impact can be seen. In Experimental Examples 27 to 32, 10% by weight of one of beryllium (Be), magnesium (Mg), barium (Ba), lanthanum (La), cerium (Ce), and yttrium (Y) was contained, and the workability was Comparative Example 1 It is greatly improved compared to the 3 to 3, it can be seen further improved compared to Experimental Examples 1 to 16.

Therefore, from these experimental results, in the second additive component, beryllium (Be), calcium (Ca), magnesium (Mg), barium (Ba), lanthanum (La), cerium (Ce) and yttrium (Y) have similar characteristics. It can be seen that it has. Therefore, the experimental results of calcium (Ca) can be similarly applied to beryllium (Be), magnesium (Mg), barium (Ba), lanthanum (La), cerium (Ce) and yttrium (Y).

In Experimental Examples 33 to 41, it can be seen that the effect of two or more first additive components, two or more second additive components, or a mixture of the first and second additive components on the properties of the silver alloy wire. Experimental Examples 33-41 satisfy | fill the preferable content of each of the 1st additional element and the 2nd additional element in the result of Experimental examples 1-32. In this case, it turns out that both bonding strength and workability improved compared with the comparative examples 1-3. Thus, it can be seen that the first and second additive components can be contained together without adversely affecting each other in the silver alloy wire.

The foregoing description of specific embodiments of the invention has been presented for purposes of illustration and description. The present invention is not limited to the above embodiments, and it is apparent that many modifications and changes can be made in the technical spirit of the present invention by those having ordinary skill in the art in combination. .

The silver alloy wire according to the present invention can increase the electrical conductivity while significantly lowering the unit cost compared to the conventional gold (Au) wire.

In addition, the silver alloy wire according to the present invention can increase the adhesive strength compared to the conventional silver (Ag) wire can increase its reliability. Furthermore, the silver alloy wire according to the present invention can increase the workability and lower the manufacturing cost.

Claims (7)

  1. delete
  2. One or more first additive ingredients selected from the group consisting of platinum (Pt), rhodium (Rh), and osmium (Os) are contained in a total of 0.05% by weight or more and 5% by weight or less, and the remainder is silver (Ag). Made of silver alloy wire for semiconductor packages.
  3. A silver alloy wire for a semiconductor package containing cerium (Ce) in an amount of more than 1% by weight and 5% by weight or less and the remainder made of silver (Ag).
  4. The silver alloy wire for semiconductor packages containing copper (Cu) in 3 weight ppm or more and 5 weight% or less, and remainder consists of silver (Ag).
  5. At least one first additive component selected from the group consisting of platinum (Pt), rhodium (Rh), and osmium (Os) in total of at least 0.05% and at most 5% by weight, copper (Cu), and cerium A silver alloy wire for a semiconductor package, comprising at least 3 wt% to 5 wt% of a total of one or more second additive ingredients selected from the group of (Ce), and the remainder being made of silver (Ag).
  6. At least one first additive component selected from the group consisting of palladium (Pd), gold (Au) and nickel (Ni) is contained in an amount of 0.05% by weight to 5% by weight in total, and 3% by weight of copper (Cu) The silver alloy wire for semiconductor packages containing more than 5 weight% and the remainder which consists of silver (Ag).
  7. delete
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KR101323246B1 (en) * 2011-11-21 2013-10-30 헤레우스 머티어리얼즈 테크놀로지 게엠베하 운트 코 카게 Bonding wire for semiconductor devices, and the manufacturing method, and light emitting diode package including the bonding wire for semiconductor devices

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