SG11201608627YA - Bonding wire for semiconductor device - Google Patents

Bonding wire for semiconductor device

Info

Publication number
SG11201608627YA
SG11201608627YA SG11201608627YA SG11201608627YA SG11201608627YA SG 11201608627Y A SG11201608627Y A SG 11201608627YA SG 11201608627Y A SG11201608627Y A SG 11201608627YA SG 11201608627Y A SG11201608627Y A SG 11201608627YA SG 11201608627Y A SG11201608627Y A SG 11201608627YA
Authority
SG
Singapore
Prior art keywords
semiconductor device
bonding wire
bonding
wire
semiconductor
Prior art date
Application number
SG11201608627YA
Inventor
-
Daizo Oda
Motoki Eto
Kazuyuki Saito
Teruo Haibara
Ryo Oishi
Takashi Yamada
Tomohiro Uno
Original Assignee
Nippon Micrometal Corp
Nippon Steel & Sumikin Mat Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Micrometal Corp, Nippon Steel & Sumikin Mat Co filed Critical Nippon Micrometal Corp
Publication of SG11201608627YA publication Critical patent/SG11201608627YA/en

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Classifications

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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
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    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/1576—Iron [Fe] as principal constituent
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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3136427B1 (en) 2014-04-21 2023-12-06 NIPPON STEEL Chemical & Material Co., Ltd. Bonding wire for semiconductor device
SG11201604432SA (en) 2015-06-15 2017-01-27 Nippon Micrometal Corp Bonding wire for semiconductor device
WO2017013796A1 (en) 2015-07-23 2017-01-26 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
EP3157046B1 (en) * 2015-08-12 2022-10-26 Nippon Micrometal Corporation Semiconductor device bonding wire
JP6452661B2 (en) * 2016-11-11 2019-01-16 日鉄マイクロメタル株式会社 Bonding wires for semiconductor devices
JP6371932B1 (en) * 2017-02-22 2018-08-08 新日鉄住金マテリアルズ株式会社 Bonding wires for semiconductor devices
KR102011619B1 (en) * 2017-02-22 2019-08-16 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 Bonding Wires for Semiconductor Devices
KR102167478B1 (en) * 2017-08-09 2020-10-19 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 Cu alloy bonding wire for semiconductor devices
CN110998814B (en) * 2017-08-09 2021-04-23 日铁化学材料株式会社 Cu alloy bonding wire for semiconductor device
CN111418047A (en) 2017-12-28 2020-07-14 日铁新材料股份有限公司 Bonding wire for semiconductor device
JP2021098886A (en) * 2019-12-20 2021-07-01 Ｊｘ金属株式会社 Metal powder for lamination molding, and lamination molding made using the metal powder

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148543A (en) 1984-08-10 1986-03-10 Sumitomo Electric Ind Ltd Copper alloy wire for connecting semiconductor element
JPS61255045A (en) 1985-05-07 1986-11-12 Nippon Mining Co Ltd Bonding wire for semiconductor device and manufacture thereof
JPS62130248A (en) * 1985-11-29 1987-06-12 Furukawa Electric Co Ltd:The Copper fine wire for bonding
JPS63235440A (en) * 1987-03-23 1988-09-30 Furukawa Electric Co Ltd:The Fine copper wire and its production
US7969021B2 (en) 2000-09-18 2011-06-28 Nippon Steel Corporation Bonding wire for semiconductor device and method for producing the same
KR100514312B1 (en) 2003-02-14 2005-09-13 헤라우스오리엔탈하이텍 주식회사 Bonding wire for semiconductor device
JP2005167020A (en) * 2003-12-03 2005-06-23 Sumitomo Electric Ind Ltd Bonding wire and integrated circuit device using the same
JP4158928B2 (en) 2004-09-02 2008-10-01 古河電気工業株式会社 Bonding wire and manufacturing method thereof
JP4705078B2 (en) 2006-08-31 2011-06-22 新日鉄マテリアルズ株式会社 Copper alloy bonding wire for semiconductor devices
JP4691533B2 (en) * 2006-08-31 2011-06-01 新日鉄マテリアルズ株式会社 Copper alloy bonding wire for semiconductor devices
US8610291B2 (en) * 2006-08-31 2013-12-17 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
WO2009014168A1 (en) * 2007-07-24 2009-01-29 Nippon Steel Materials Co., Ltd. Semiconductor device bonding wire and wire bonding method
JP4885117B2 (en) * 2007-12-03 2012-02-29 新日鉄マテリアルズ株式会社 Bonding wires for semiconductor devices
JP4617375B2 (en) * 2007-12-03 2011-01-26 新日鉄マテリアルズ株式会社 Bonding wires for semiconductor devices
JP5222339B2 (en) * 2007-12-03 2013-06-26 新日鉄住金マテリアルズ株式会社 Bonding wires for semiconductor devices
JP4554724B2 (en) * 2008-01-25 2010-09-29 新日鉄マテリアルズ株式会社 Bonding wires for semiconductor devices
JP4349641B1 (en) * 2009-03-23 2009-10-21 田中電子工業株式会社 Coated copper wire for ball bonding
JP4637256B1 (en) 2009-09-30 2011-02-23 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
SG178063A1 (en) * 2009-07-30 2012-03-29 Nippon Steel Materials Co Ltd Bonding wire for semiconductor
WO2011093038A1 (en) 2010-01-27 2011-08-04 住友ベークライト株式会社 Semiconductor device
JP5550369B2 (en) * 2010-02-03 2014-07-16 新日鉄住金マテリアルズ株式会社 Copper bonding wire for semiconductor and its bonding structure
JP4919364B2 (en) 2010-08-11 2012-04-18 田中電子工業株式会社 Gold-coated copper wire for ball bonding
JP5616739B2 (en) * 2010-10-01 2014-10-29 新日鉄住金マテリアルズ株式会社 Multilayer copper bonding wire bonding structure
JP2012099577A (en) * 2010-10-29 2012-05-24 Sumitomo Metal Mining Co Ltd Bonding wire
JPWO2013024829A1 (en) * 2011-08-12 2015-03-05 日立化成株式会社 Solder bonded body, solder bonded body manufacturing method, element, solar cell, element manufacturing method, and solar cell manufacturing method
JP5088981B1 (en) * 2011-12-21 2012-12-05 田中電子工業株式会社 Pd coated copper ball bonding wire
CN102776408B (en) * 2012-08-16 2014-01-08 烟台一诺电子材料有限公司 Silver alloy wire and preparation method thereof
JP5219316B1 (en) * 2012-09-28 2013-06-26 田中電子工業株式会社 Copper platinum alloy wire for semiconductor device connection
WO2014070795A1 (en) * 2012-10-31 2014-05-08 Silicium Energy, Inc. Methods for forming thermoelectric elements
TWI413702B (en) * 2013-02-19 2013-11-01 Truan Sheng Lui Copper-palladium alloy wire formed by solid phase diffusion reaction and the manufacturing method thereof
JP5668087B2 (en) * 2013-02-22 2015-02-12 田中電子工業株式会社 Structure of copper dilute nickel alloy wire for semiconductor device bonding
JP5546670B1 (en) * 2013-06-13 2014-07-09 田中電子工業株式会社 Structure of coated copper wire for ultrasonic bonding
JP6148543B2 (en) * 2013-06-13 2017-06-14 株式会社Ｓｕｂａｒｕ Flight path search device and flight path search program
KR101582449B1 (en) * 2013-09-12 2016-01-05 엠케이전자 주식회사 Ag alloy bonding wire and a semiconductor device comprising the same
MY175700A (en) * 2014-01-31 2020-07-06 Tatsuta Electric Wire & Cable Co Ltd Wire bonding and method of manufacturing wire bonding
WO2016189752A1 (en) * 2015-05-26 2016-12-01 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
EP3157046B1 (en) * 2015-08-12 2022-10-26 Nippon Micrometal Corporation Semiconductor device bonding wire

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