SG11201608819VA - Bonding wire for semiconductor device - Google Patents

Bonding wire for semiconductor device

Info

Publication number
SG11201608819VA
SG11201608819VA SG11201608819VA SG11201608819VA SG11201608819VA SG 11201608819V A SG11201608819V A SG 11201608819VA SG 11201608819V A SG11201608819V A SG 11201608819VA SG 11201608819V A SG11201608819V A SG 11201608819VA SG 11201608819V A SG11201608819V A SG 11201608819VA
Authority
SG
Singapore
Prior art keywords
semiconductor device
bonding wire
bonding
wire
semiconductor
Prior art date
Application number
SG11201608819VA
Inventor
Tetsuya Oyamada
Tomohiro Uno
Hiroyuki Deai
Original Assignee
Nippon Steel & Sumikin Mat Co
Nippon Micrometal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel & Sumikin Mat Co, Nippon Micrometal Corp filed Critical Nippon Steel & Sumikin Mat Co
Publication of SG11201608819VA publication Critical patent/SG11201608819VA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Wire Bonding (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
SG11201608819VA 2014-04-21 2015-04-21 Bonding wire for semiconductor device SG11201608819VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014087587 2014-04-21
PCT/JP2015/062040 WO2015163297A1 (en) 2014-04-21 2015-04-21 Bonding wire for semiconductor device

Publications (1)

Publication Number Publication Date
SG11201608819VA true SG11201608819VA (en) 2016-12-29

Family

ID=54332462

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201608819VA SG11201608819VA (en) 2014-04-21 2015-04-21 Bonding wire for semiconductor device

Country Status (10)

Country Link
US (1) US10950570B2 (en)
EP (1) EP3136427B1 (en)
JP (3) JP6167227B2 (en)
KR (2) KR101902091B1 (en)
CN (2) CN106233447A (en)
MY (1) MY168617A (en)
PH (1) PH12016502098B1 (en)
SG (1) SG11201608819VA (en)
TW (1) TWI605559B (en)
WO (1) WO2015163297A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101902091B1 (en) 2014-04-21 2018-09-27 신닛테츠스미킹 마테리알즈 가부시키가이샤 Bonding wire for semiconductor device
CN106489199B (en) 2015-06-15 2019-09-03 日铁新材料股份有限公司 Bonding wire for semiconductor device
WO2017013796A1 (en) 2015-07-23 2017-01-26 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
JP6002300B1 (en) * 2015-09-02 2016-10-05 田中電子工業株式会社 Palladium (Pd) coated copper wire for ball bonding
US10529683B2 (en) 2015-12-15 2020-01-07 Nippon Steel Chemical & Material Co., Ltd. Bonding wire for semiconductor device
SG10201600329SA (en) * 2016-01-15 2017-08-30 Heraeus Materials Singapore Pte Ltd Coated wire
WO2017221434A1 (en) * 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
JP6452661B2 (en) * 2016-11-11 2019-01-16 日鉄マイクロメタル株式会社 Bonding wires for semiconductor devices
DE112017000346T5 (en) 2017-12-28 2019-08-29 Nippon Micrometal Corporation Bonding wire for semiconductor device
US11929343B2 (en) 2021-06-25 2024-03-12 Nippon Micrometal Corporation Bonding wire for semiconductor devices
KR20240026928A (en) * 2021-06-25 2024-02-29 닛데쓰마이크로메탈가부시키가이샤 Bonding wire for semiconductor devices
US11721660B2 (en) * 2021-06-25 2023-08-08 Nippon Micrometal Corporation Bonding wire for semiconductor devices
CN117581341A (en) * 2021-06-25 2024-02-20 日铁新材料股份有限公司 Bonding wire for semiconductor device
WO2022270050A1 (en) * 2021-06-25 2022-12-29 日鉄マイクロメタル株式会社 Bonding wire for semiconductor devices
EP4361299A1 (en) * 2021-06-25 2024-05-01 Nippon Micrometal Corporation Bonding wire for semiconductor device

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR840001426B1 (en) 1982-10-20 1984-09-26 이영세 Copper alloys and its producing methods using electric and electronic materials
JPS60160554U (en) 1984-03-31 1985-10-25 古河電気工業株式会社 Bonding thin wire for semiconductors
JPS6120693A (en) * 1984-07-06 1986-01-29 Toshiba Corp Bonding wire
JPS6148543A (en) 1984-08-10 1986-03-10 Sumitomo Electric Ind Ltd Copper alloy wire for connecting semiconductor element
JPS61163194A (en) * 1985-01-09 1986-07-23 Toshiba Corp Bonding wire for semiconductor element
JPS61255045A (en) 1985-05-07 1986-11-12 Nippon Mining Co Ltd Bonding wire for semiconductor device and manufacture thereof
JPS62130248A (en) 1985-11-29 1987-06-12 Furukawa Electric Co Ltd:The Copper fine wire for bonding
JPS63235440A (en) 1987-03-23 1988-09-30 Furukawa Electric Co Ltd:The Fine copper wire and its production
JPS63241127A (en) 1987-03-27 1988-10-06 Mitsubishi Metal Corp Cu alloy extra fine wire for bonding wire of semiconductor
JPS63247325A (en) 1987-04-02 1988-10-14 Furukawa Electric Co Ltd:The Fine copper wire and its production
KR930006292B1 (en) * 1988-04-12 1993-07-12 미쯔비시덴끼 가부시끼가이샤 Cupper alloy for electronic articles and its making process
JP2501306B2 (en) 1994-07-08 1996-05-29 株式会社東芝 Semiconductor device
JP2993660B2 (en) 1996-03-11 1999-12-20 株式会社東芝 Bonding wire
US6610930B1 (en) 1998-09-16 2003-08-26 Kulicke & Soffa Investments, Inc. Composite noble metal wire
KR100717667B1 (en) 2000-09-18 2007-05-11 신닛뽄세이테쯔 카부시키카이샤 Bonding wire for semiconductor and method of manufacturing the bonding wire
JP2002359261A (en) 2001-03-27 2002-12-13 Nippon Steel Corp Wire bonding method, semiconductor device and bonding wire
JP2004014884A (en) 2002-06-07 2004-01-15 Sumitomo Electric Wintec Inc Bonding wire
KR100514312B1 (en) 2003-02-14 2005-09-13 헤라우스오리엔탈하이텍 주식회사 Bonding wire for semiconductor device
JP2005167020A (en) 2003-12-03 2005-06-23 Sumitomo Electric Ind Ltd Bonding wire and integrated circuit device using the same
JP4158928B2 (en) 2004-09-02 2008-10-01 古河電気工業株式会社 Bonding wire and manufacturing method thereof
JP4672373B2 (en) 2005-01-05 2011-04-20 新日鉄マテリアルズ株式会社 Bonding wires for semiconductor devices
KR20090086448A (en) 2005-01-05 2009-08-12 신닛테츠 마테리알즈 가부시키가이샤 Bonding wire for semiconductor device
KR100702662B1 (en) 2005-02-18 2007-04-02 엠케이전자 주식회사 Copper bonding wire for semiconductor packaging
JP4705078B2 (en) 2006-08-31 2011-06-22 新日鉄マテリアルズ株式会社 Copper alloy bonding wire for semiconductor devices
JP4691533B2 (en) 2006-08-31 2011-06-01 新日鉄マテリアルズ株式会社 Copper alloy bonding wire for semiconductor devices
WO2009014168A1 (en) 2007-07-24 2009-01-29 Nippon Steel Materials Co., Ltd. Semiconductor device bonding wire and wire bonding method
JP5222340B2 (en) 2007-12-03 2013-06-26 新日鉄住金マテリアルズ株式会社 Bonding wires for semiconductor devices
JP4617375B2 (en) 2007-12-03 2011-01-26 新日鉄マテリアルズ株式会社 Bonding wires for semiconductor devices
EP2239766B1 (en) 2008-01-25 2013-03-20 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor device
JP4886899B2 (en) 2009-03-17 2012-02-29 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
JP4349641B1 (en) * 2009-03-23 2009-10-21 田中電子工業株式会社 Coated copper wire for ball bonding
WO2011013527A1 (en) 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
JP4637256B1 (en) 2009-09-30 2011-02-23 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
SG182432A1 (en) 2010-01-27 2012-08-30 Sumitomo Bakelite Co Semiconductor device
JP5550369B2 (en) 2010-02-03 2014-07-16 新日鉄住金マテリアルズ株式会社 Copper bonding wire for semiconductor and its bonding structure
TW201207129A (en) * 2010-08-05 2012-02-16 jin-yong Wang Cooper bonding wire used in encapsulation and manufacturing method thereof
JP4919364B2 (en) * 2010-08-11 2012-04-18 田中電子工業株式会社 Gold-coated copper wire for ball bonding
JP5616739B2 (en) 2010-10-01 2014-10-29 新日鉄住金マテリアルズ株式会社 Multilayer copper bonding wire bonding structure
JP2012099577A (en) 2010-10-29 2012-05-24 Sumitomo Metal Mining Co Ltd Bonding wire
WO2013024829A1 (en) 2011-08-12 2013-02-21 日立化成工業株式会社 Solder adhesive body, production method for solder adhesive body, element, solar cell, production method for element, and production method for solar cell
WO2013076548A1 (en) 2011-11-26 2013-05-30 Microbonds Inc. Bonding wire and process for manufacturing a bonding wire
SG190479A1 (en) * 2011-12-01 2013-06-28 Heraeus Materials Tech Gmbh Secondary alloyed 1n copper wire for bonding in microelectronics device
SG190481A1 (en) * 2011-12-01 2013-06-28 Heraeus Materials Tech Gmbh Alloyed 2n copper wire for bonding in microelectronics device
JP5534565B2 (en) 2011-12-02 2014-07-02 日鉄住金マイクロメタル株式会社 Bonding wire and manufacturing method thereof
CN102776408B (en) 2012-08-16 2014-01-08 烟台一诺电子材料有限公司 Silver alloy wire and preparation method thereof
JP5219316B1 (en) 2012-09-28 2013-06-26 田中電子工業株式会社 Copper platinum alloy wire for semiconductor device connection
WO2014070795A1 (en) 2012-10-31 2014-05-08 Silicium Energy, Inc. Methods for forming thermoelectric elements
CN103943584A (en) 2013-01-18 2014-07-23 日月光半导体制造股份有限公司 Bonding wire for semiconductor device
JP5668087B2 (en) 2013-02-22 2015-02-12 田中電子工業株式会社 Structure of copper dilute nickel alloy wire for semiconductor device bonding
JP5399581B1 (en) 2013-05-14 2014-01-29 田中電子工業株式会社 High speed signal bonding wire
JP5546670B1 (en) 2013-06-13 2014-07-09 田中電子工業株式会社 Structure of coated copper wire for ultrasonic bonding
KR101582449B1 (en) 2013-09-12 2016-01-05 엠케이전자 주식회사 Ag alloy bonding wire and a semiconductor device comprising the same
CN105393343A (en) 2014-01-31 2016-03-09 大自达电线株式会社 Wire bonding and method for producing same
KR101902091B1 (en) 2014-04-21 2018-09-27 신닛테츠스미킹 마테리알즈 가부시키가이샤 Bonding wire for semiconductor device
US9368470B2 (en) 2014-10-31 2016-06-14 Freescale Semiconductor, Inc. Coated bonding wire and methods for bonding using same
WO2016189752A1 (en) 2015-05-26 2016-12-01 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
SG10201705029XA (en) 2015-08-12 2017-07-28 Nippon Micrometal Corp Bonding wire for semiconductor device

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