TW201207129A - Cooper bonding wire used in encapsulation and manufacturing method thereof - Google Patents

Cooper bonding wire used in encapsulation and manufacturing method thereof Download PDF

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Publication number
TW201207129A
TW201207129A TW099126038A TW99126038A TW201207129A TW 201207129 A TW201207129 A TW 201207129A TW 099126038 A TW099126038 A TW 099126038A TW 99126038 A TW99126038 A TW 99126038A TW 201207129 A TW201207129 A TW 201207129A
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TW
Taiwan
Prior art keywords
wire
copper
gold
silver
additive
Prior art date
Application number
TW099126038A
Other languages
Chinese (zh)
Inventor
jin-yong Wang
Original Assignee
jin-yong Wang
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Publication date
Application filed by jin-yong Wang filed Critical jin-yong Wang
Priority to TW099126038A priority Critical patent/TW201207129A/en
Publication of TW201207129A publication Critical patent/TW201207129A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45599—Material
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    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Conductive Materials (AREA)
  • Wire Bonding (AREA)

Abstract

The present invention relates to a copper bonding wire used in encapsulation and a manufacturing method thereof. The components of the copper bonding wire comprises silver (Ag), additive and copper (Cu), wherein the content of silver is 0.1-3 wt%; at least one of additive is selected from a group consisting of nickel (Ni), platinum (Pt), palladium (Pd), tin (Sn), and gold (Au); and the content of additive is 0.1-3 wt%. Moreover, co-crystalline volume rate of copper and silver accounts for 0.1-8% of the total volume, the tensile strength of the copper bonding wire is greater than 250 MPa, and the electrical conductivity is greater than 70%IACS. Therefore, this invention can be used to replace conventional copper bonding wires used in encapsulation to lower material usage and manufacture cost. Moreover, the impedance of this copper bonding wire is equal to or even less than that of the conventional gold wires (> 70%IACS), thereby having better electrical conductivity. Also, this invention has proper hardness to easily perform soldering and ball soldering and can be used in the rigid condition of resisting thermal circulation.

Description

201207129 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種封裝用之接合銅線及其製造方法 尤指一種適用於積體電路（IC)的連接線、或發 只兀* 一^極體 (LED)導線等之接合銅線。 【先前技術】 習知的電晶體、1C、LSI等半導體' 或積體電路等組件， 其連結電極與外部導線架多是以含有99 99%以上的高純声 黃金與其他微量金屬元素做成的金線來作為電性連接之連 接線。然而，在打線之製程方法上，一般主要都是採超音 波併用熱壓著連接法。 9 再者，半導體、或積體電路的安裝則主要考量外部導 線材料的散熱性、以及成本。所以，目前多半採用鋼合金 製成的導線架。然而，使用銅合金製的導線架時，由於封 裝用樹脂與導線架的熱膨脹係數差異過大，隨著半導體啟 動後溫度上升，因熱形成之體積膨脹對形成迴路的合金線 產生外°卩應力，特別是對暴露於嚴酷的熱循環環境下的半 導體元件，特別容易使合金線發生斷線的問題。 此外，隨著金價不斷地飆漲，封裝業者對金線的替代 品的需求更形強烈。雖然，目前市面上已有鋁線、及純銅 線、鍍鈀銅線及高成分（添加物>5%Au)銀合金線欲取代昂貴 的金線。然而，鋁線成本雖然便宜但無法適用於球型銲接 (Ball Bonding)。另外，純銅線雖能滿足成本與銲接的要求， 201207129 但卻有使用期很短（Short Shelf Life)及易氧化的缺陷。鑛纪 銅線因加工過程的先天限制，造成封裴過程整體產出率 (Yield)不及金線《至於，高成分（添加物>5%Au)銀合金線則 有高阻抗（Resistivity)、及硬度過高等缺陷，造成使用上的 限制β 由此可知，產業上迫切需要一種同時具備以下特性之 金線替代品，其能進行球型銲接、其阻抗和金線相當或甚 至更低（>70%IACS)、其硬度適中並易於銲接、能耐熱循環 修之嚴苛條件下使用、具便利的使用時效、以及可大幅降低 材料及使用成本。 【發明内容】 本發明係有關於一種封裝用之接合鋼線及其製造方 法，而接合銅銀線之成分包括有銀（Ag)、添加物、以及銅 (Cu);其中，銀含量係o.iywt% ;添加物係至少一選自由 • 鎳（Ni)、始（Pt)、鈀（Pd)、錫（Sn)、及金（Au)所組成之群組， 且添加物之含量係再者，銅與銀共晶相體積率 佔全部體積的0.^8%，且接合銀線抗拉強度25〇Μρ&以 上，導電率在7〇%IACS以上。因此，本發明俾能取代習 知封裝用之接合金線，大幅降低材料及使用成本；且阻抗 和傳統金線相當或甚至更低（>70q/〇iacs)，可達到更佳之導 電率；又硬度適中並易於銲接，更能進行球型銲接，而且 201207129 能於耐熱猶環之嚴苛條件下使用。 較佳的是，本發明封裝用之接合銀線的線徑在〇〇71111^ 以下，以符合目前半導體製程之需求。再者，本發明之封 裝用之接合銅線的外表面更包括有一金塗層，藉由金塗層 之金屬特性，可以提高抗氧化性、穩定度、及產品壽命。 本發明之另一態樣為一種封裝用之接合銅線之製造方 法，包括以下步驟：（A)製備一圓棒體，其係將一銀合金熔 液注入一鑄模中冷卻後製成；其中，銅合金熔液包括含量 〇·1〜3wt%的銀、含量01〜3wt%的添加物、以及銅，添加物 係選自鎳（Ni)、鉑（Pt)、鈀（Pd)、錫（Sn)、及金（Au)中至少其 一，（B)拉伸塑型圓棒體成一線材；以及再結晶處理線 材。因此’本發明俾能取代習知封裝用之接合金線，可大 幅降低材料、及使用成本，且本發明之阻抗和金線相當或 甚至更低（>70%IACS)，又硬度適中並易於打線銲接，更能 進打球型銲接，而且能於耐熱循環之嚴苛條件下使用。 另外’本發明之步驟（c)可為以4〇(rc〜65〇〇c持續〇5秒 〜20秒之還原氣氛下進行熱處理。再且，本發明步驟（c)可 更包括有一步驟（D1) ’其急冷處理線材。此外，步驟（D1) 更包括有一步驟（El)，其電鍍金（Au)於線材。其中，藉由上 述熱處理、及電鍍處理以提高線材之穩定性，有效避免線 材氧化，影響壽命及導電率。 再者’本發明封裝用之接合銅線之製造方法之步驟（c) 係以600 C〜800°C持續1秒〜20秒之加熱楚理、及3〇〇°C〜400 C持續1秒〜1〇秒之回火處理。而且，本發明之步驟（c)可更 201207129 ι括有v驟（D2)，其電鍍鎳（Ni)於線材。再且，本發明之 步驟（D2)後可更包括有一步驟(E2) ’其電鑛金(⑽於線材。 同樣地，藉由上述熱處理、及電鍍處理以提高線材之穩定 性、及抗氧化，有效避免線材氧化，影響壽命、及導電率。 【實施方式] 請同時參閱圖1A、及圖1B，圖1A係本發明封裝用之接 合銅線一較佳實施例之積體電路應用示意圖，圖1B係本發 籲 明封裝用之接合銅線—較佳實施例之LED應用示意圖。如 圖中所示，本發明接合銅線1之可運用於一般積體電路、或 LED等電子元件之封裝製程中，主要用於電性連接之導電 線材。‘然而，習知一般皆採用金線，但其價格昂貴、成本 相當高。據此，本發明用以取代習知金線，可大幅降低材 料及使用成本。再且，本發明之阻抗和金線相當或甚至更 低（>70〇/〇IACS)，導電率極佳。又，硬度適中易於銲接，更 旎進仃球型銲接，並且能於耐熱循環之嚴苛條件下使用。 • 請參閱圖2，圖2係本發明封裝用之接合銅線一較佳實 施例之剖視圖。如圖中所示，接合銀線丨包括有一線材U、 及一金塗層12，其線徑在〇〇7mm以下，以符合目前半導體 製程之需求。再且，線材11成分主要包括有銀(Ag)、添加 物、以及銅（Cu)。當然，無可避免的上述成分皆摻雜有極 少量之雜質。其♦，銀（Ag)含量係〇卜3〜％ ;添加物係至 少一選自由鎳（Ni)、鉑（Pt)、鈀（Pd)、錫（Sn) '及金（Au)所組 成之群組，且添加物之含量係〇卜31^%。再者，銅與銀共 201207129 晶相體積率佔全部體積的〇·1~8% ;而且接合銅線之抗拉強 度在250MPa以上，導電率在70%IACS以上。其中，如下所 示之表1 ’其列舉本發明不同成分之組成比例的數種實施 例，及其相對應之抗拉強度、金銀共晶相體積率、及導電 率。 表1201207129 VI. Description of the Invention: [Technical Field] The present invention relates to a bonded copper wire for packaging and a method of manufacturing the same, and more particularly to a connecting wire suitable for an integrated circuit (IC), or a hairpin* Bonded copper wire of a polar body (LED) wire or the like. [Prior Art] Conventional transistors, semiconductors such as 1C and LSI, or integrated circuits, etc., the connection electrode and the external lead frame are mostly made of high-purity gold and other trace metal elements containing 99 99% or more. The wire is used as a connecting wire for electrical connection. However, in the method of manufacturing the wire, it is generally mainly to use ultrasonic waves and use a hot pressing connection method. 9 Furthermore, the installation of semiconductors or integrated circuits mainly considers the heat dissipation and cost of the external conductor materials. Therefore, wire guides made of steel alloys are mostly used at present. However, when a lead frame made of a copper alloy is used, since the difference in thermal expansion coefficient between the encapsulating resin and the lead frame is too large, as the temperature rises after the semiconductor is started, the volume expansion due to heat generates an external stress to the alloy wire forming the loop. In particular, the semiconductor element exposed to a severe thermal cycle environment is particularly susceptible to the problem of wire breakage of the alloy wire. In addition, as gold prices continue to soar, packaging companies are increasingly demanding alternatives to gold wire. Although aluminum wires, pure copper wires, palladium-plated copper wires, and high-component (additives > 5% Au) silver alloy wires are currently available on the market to replace expensive gold wires. However, the cost of aluminum wire is cheap but cannot be applied to Ball Bonding. In addition, pure copper wire can meet the cost and welding requirements, 201207129 but has a short life (Short Shelf Life) and easy to oxidize defects. Due to the inherent limitations of the processing process, the overall yield of the sealing process is lower than that of the gold wire. As for the high component (additive > 5%Au) silver alloy wire, there is high impedance (Resistivity). Defects such as excessive hardness cause a limitation in use. Therefore, it is known that there is an urgent need for a gold wire substitute having the following characteristics, which can perform ball bonding, and its impedance and gold wire are equivalent or even lower (&gt 70% IACS), moderate hardness and easy to solder, can be used under the harsh conditions of heat-resistant cycle repair, convenient use time, and can greatly reduce material and use cost. SUMMARY OF THE INVENTION The present invention relates to a bonded steel wire for packaging and a method of manufacturing the same, wherein the composition of the joined copper silver wire includes silver (Ag), an additive, and copper (Cu); wherein, the silver content is o .iywt%; at least one selected from the group consisting of: nickel (Ni), primary (Pt), palladium (Pd), tin (Sn), and gold (Au), and the content of the additive is The volume ratio of the eutectic phase of copper to silver is 0. 8% of the total volume, and the tensile strength of the bonded silver wire is 25 〇Μ ρ & above, and the electrical conductivity is above 7〇% IACS. Therefore, the present invention can replace the bonding gold wire for the conventional packaging, greatly reducing the material and the use cost; and the impedance is equivalent to or lower than the conventional gold wire (>70q/〇iacs), thereby achieving better conductivity; It is also moderately hard and easy to weld, and is more capable of ball welding, and 201207129 can be used under the harsh conditions of heat-resistant ring. Preferably, the wire diameter of the bonded silver wire for packaging of the present invention is below 〇〇71111^ to meet the requirements of current semiconductor processes. Further, the outer surface of the joined copper wire for sealing of the present invention further includes a gold coating layer, and the metal properties of the gold coating layer can improve oxidation resistance, stability, and product life. Another aspect of the present invention provides a method for manufacturing a bonded copper wire for packaging, comprising the steps of: (A) preparing a round bar body, which is formed by injecting a silver alloy melt into a mold and cooling; The copper alloy melt includes silver in an amount of 〇1 to 3 wt%, an additive in an amount of 01 to 3 wt%, and copper, and the additive is selected from the group consisting of nickel (Ni), platinum (Pt), palladium (Pd), and tin (Sn). And at least one of gold (Au), (B) a stretched round bar body formed into a wire; and a recrystallized wire. Therefore, the present invention can replace the bonding gold wire for conventional packaging, which can greatly reduce the material and the cost of use, and the impedance and gold wire of the present invention are equivalent or even lower (>70% IACS), and the hardness is moderate. It is easy to wire and weld, it can be used for ball welding, and it can be used under the harsh conditions of heat cycle. Further, the step (c) of the present invention may be a heat treatment in a reducing atmosphere of 4 Torr (rc~65 〇〇c for 5 seconds to 20 seconds). Further, the step (c) of the present invention may further comprise a step ( D1) 'The quenching treatment wire. In addition, the step (D1) further comprises a step (El) for electroplating gold (Au) on the wire, wherein the heat treatment and the plating treatment are used to improve the stability of the wire, thereby effectively avoiding The wire is oxidized, which affects the life and conductivity. Further, the step (c) of the method for manufacturing the bonded copper wire for packaging of the present invention is performed at 600 C to 800 ° C for 1 second to 20 seconds, and 3 〇. 〇°C~400 C for tempering treatment for 1 second to 1 sec. Moreover, step (c) of the present invention may further include v (D2), which is electroplated with nickel (Ni) on the wire. The step (D2) of the present invention may further comprise a step (E2) of 'electro-mineral gold ((10) to the wire. Similarly, by the above heat treatment, and electroplating treatment to improve the stability of the wire and the oxidation resistance, effective Avoid oxidation of wires, affect life and conductivity. [Embodiment] Please also refer to Figure 1A. And FIG. 1B is a schematic view showing the application of the integrated circuit of the preferred embodiment of the present invention. FIG. 1B is a schematic diagram of the LED application of the preferred embodiment. As shown in the figure, the bonding copper wire 1 of the present invention can be applied to a package circuit of a general integrated circuit or an electronic component such as an LED, and is mainly used for electrically connecting electrically conductive wires. However, conventionally, it is generally used. Gold wire, but it is expensive and costly. Accordingly, the present invention can replace the conventional gold wire, and can greatly reduce the material and the use cost. Moreover, the impedance and the gold wire of the present invention are equivalent or even lower (&gt 70 〇 / 〇 IACS), excellent electrical conductivity. Also, moderate hardness, easy to weld, more spheroidal welding, and can be used under the harsh conditions of heat cycle. • Please refer to Figure 2, Figure 2 A cross-sectional view of a preferred embodiment of a bonded copper wire for inventing a package. As shown in the drawing, the bonded silver wire includes a wire U and a gold coating 12 having a wire diameter of less than 7 mm to conform to the current semiconductor. Process requirements. Again, wire 11 The main components include silver (Ag), additives, and copper (Cu). Of course, the above ingredients are inevitably doped with a very small amount of impurities. The ♦, silver (Ag) content is 3~%; At least one of the additive systems is selected from the group consisting of nickel (Ni), platinum (Pt), palladium (Pd), tin (Sn)', and gold (Au), and the content of the additive is 31% by weight. Furthermore, copper and silver total 201207129 crystal phase volume ratio accounts for 〇·1~8% of the total volume; and the tensile strength of the bonded copper wire is above 250MPa, and the electrical conductivity is above 70% IACS. 1 ' which enumerates several examples of the composition ratios of the different components of the invention, and their corresponding tensile strength, gold-silver eutectic phase volume ratio, and electrical conductivity. Table 1

No. 線材組成* (wt%) 抗拉 強度 (MPa) 銅銀共 晶相體 積率 (Vol%) 導電率 (%IACS) 銀 (Ag) 銘 (Pt) ίΒ (Pd) 錫 (Sn) 金 (All) 鎳 (Ni) 1 0.1 0.1 0.1 0.1 260 0.2 ~9Λ ' 2 0.2 0.1 0.2 265 0.25 94 3. 0.3 0.1 0.1 0.1 270 0.35 92 4 0.5 0.1 0.1 0.1 280 0.5 85 5. 0.5 0.2 0.1 285 0.5 —-— 87 6 0.5 0.1 0.2 1.0 305 0.55 83 7 0.5 0.2 1.5 0.1 310 0.6 1 一 . 82 8 0.8 0.1 0.1 1.0 305 1.0 83 9 0.8 0.1 0.5 1.0 320 1.0 82 10 0.8 0.2 0.5 1.5 340 0.95 Ti 11 1.5 0.1 0.1 0.5 300 2.1 83 13 1.5 0.5 1.5 355 2.3 78 14 1.5 0.3 0.3 1.0 320 2.2 81 15 2.0 0.2 1.5 0.2 325 2.8 80 16 2.0 0.1 0.3 2.0 370 2.8 76 17 2.0 1.0 0.5 1.5 380 3.4 76 18 2.0 0.3 0.7 2.0 380 3.6 75 19 3.0 0.1 0.5 0.5 315 5.0 79 20 3.0 0.5 0.5 2.0 385 6.2 72 21 3.0 0.5 0.5 2.0 395 6.5 73 22 3.0 1.0 1.0 1.0 395 7.5 ------ 71 註其餘成分為銅（Cu) 201207129 再者’線材11外包括有一金塗層12，本實施例係電鍍 形成於線材11外，當然其亦可透過無電鐘' 化學氣相沉積 (Chemical Vapor Deposition, CVD)' 或其他等效製程。因 此’本實施例藉由金塗層12之金屬特性，可以提高抗氧化 性質、穩定度、及產品壽命。亦或’在本發明的其他態樣 中可以鎳（Ni)塗層取代金塗層12，其材料成本更低，且同樣 可達到不錯之抗氧化功效。然而’在本發明的其他實施態 樣中不以金塗層12為必要，原本線材11本身即具相當之穩 定度、及抗氧化性能’無需再另形成金或其他金屬於線材 11表面亦可。 睛參閱圖3，圖3係本發明第一實施例之流程圖。如圖 中所示本發明第一實施例之製造方法，包括以下步驟：（A) 製備一圓棒體，其係將一銅合金熔液注入一鑄模中冷卻後 製成。當然，其中包括先純化銅合金炫液之步驟（未圖式）， 以去除原料中大部分之雜質。不過，無法避免的，純化後 可能還會摻雜有極少量之雜質。再者，銅合金熔液包括含 量0.1〜3wt%的銀、含量0.1〜3\νΐ〇/ίι的添加物、以及銅，且添 加物係選自鎳（Ni)、鉑（Pt)、鈀（Pd)、錫（Sn)、及金（Au)中至 少其一。 接著，步驟（B)拉伸塑型圓棒體成一線材。其中，需要 夕人拉伸塑型’包括粗拉伸（breakdown drawing)、拉伸 (drawing)、及最終拉伸（final drawing)。再者，成形成線材 後再經一步驟（C) ’其再結晶處理線材。在本實施例中，步 驟（C)係以4〇〇°C〜650〇C持續0.5秒〜20秒之還原氣氛下進行 201207129 熱處理。然而’本實施例中步驟（c)後更包括有一步驟（D1) 急冷處理線材。其中，本實施例之步驟（D1)是由3〇〇°c〜4〇〇 ◦C之高溫於約2秒之急冷處理至3(rc±1(rc。然而，本實施 例之急冷處理的主要係調整線材表面晶粒結構，進而改善 線材的機械性質。最後，再經一步驟（E1)，電鍍金（Au)於線 材。據此，電鍍金以形成金塗層12，其主要用以提高線材 之穩定性、及抗氧化’有效避免線材氧化，而影響壽命、 及導電率。 • 請參閱圖4，圖4係本發明封裝用之接合銅線第二實施 例之剖視圖。本實施例與第一實施例之組成、及成分上的 差異主要在於’線材11上先包覆有一鎳塗層13，而鎳塗層 13外又另包覆有一金塗層丨2 ^據此，本實施例可得到更佳 之抗氧化效果，可更延長使用壽命。 晴參閱圖5，圖5係本發明封裝用之接合銅線第二實施 例之流程圖。首先，同樣先進行步驟（A)，即製備一圓棒體， 其係將一銀合金溶液注入一鑄模中冷卻後製成。當然，其 φ 中包括先純化銅合金熔液之步驟（未圖式），以去除原料中大 部分之雜質。不過，無法避免的，純化後可能還會摻雜有 極少量之雜質。再者，銅合金炫液包括含量〇1〜3wt❹的銀、 3里0.1〜3wt%的添加物、以及銅，而添加物係選自鎳（Ni)、 紐（Pt)、鈀（Pd)、錫（Sn)、及金（Au)中至少其一。 接著，步驟（B)拉伸塑型圓棒體成一線材。其中，同樣需要 多次拉伸塑型’包括粗拉伸（breakd〇wn drawing)、拉伸 (drawing)、及最終拉伸（finai drawing)。再者，成形成線材 201207129 後再經一步驟（c)，其再結晶處理線材。在本實施例 中’步驟（C)係以600°C〜800°C持續1秒〜2〇秒之加熱處理、 及3〇0°C〜4〇〇°C持續1秒〜2〇秒之回火處理。據此，本實施例 藉由加熱、及回火處理可使内部晶粒大小適中，且分佈更 均勻（homogeneous)，以進一步調整適當之機械強度。並且， 本實施例之步驟（C)後更包括有一步驟（D2)、及—步驟 (E2)，其分別電鍍鎳(Ni)、及金（Au)於線材。因此，本實施 例藉由先鍍鎳後再電鍍金以形成金塗層12,其主要用以提 高線材之穩定性、及抗氧化，有效避免線材氧化，而影響 壽命'及導電率。 上述實施例僅係為了方便說明而舉例而已，本發明所 主張之權利範圍自應以申請專利範圍所述為準，而非僅限 於上述實施例。 【圖式簡單說明】 圖1A係本發明一較佳實施例之積體電路應用示意圖。 圖1B係本發明一較佳實施例之LED應用示意圖。 圖2係本發明第一實施例之剖視圖。 圖3係本發明第一實施例之流程圖。 圖4係本發明第二實施例之剖視圖。 圖5係本發明第二實施例之流程圖。 201207129 【主要元件符號說明】 1 接合銅線 12金塗層 11線材 13鎳塗層No. Wire composition* (wt%) Tensile strength (MPa) Copper-silver eutectic phase volume fraction (Vol%) Conductivity (%IACS) Silver (Ag) Ming (Pt) Β (Pd) Tin (Sn) Gold ( All) Nickel (Ni) 1 0.1 0.1 0.1 0.1 260 0.2 ~ 9 Λ ' 2 0.2 0.1 0.2 265 0.25 94 3. 0.3 0.1 0.1 0.1 270 0.35 92 4 0.5 0.1 0.1 0.1 280 0.5 85 5. 0.5 0.2 0.1 285 0.5 —-— 87 6 0.5 0.1 0.2 1.0 305 0.55 83 7 0.5 0.2 1.5 0.1 310 0.6 1 I. 82 8 0.8 0.1 0.1 1.0 305 1.0 83 9 0.8 0.1 0.5 1.0 320 1.0 82 10 0.8 0.2 0.5 1.5 340 0.95 Ti 11 1.5 0.1 0.1 0.5 300 2.1 83 13 1.5 0.5 1.5 355 2.3 78 14 1.5 0.3 0.3 1.0 320 2.2 81 15 2.0 0.2 1.5 0.2 325 2.8 80 16 2.0 0.1 0.3 2.0 370 2.8 76 17 2.0 1.0 0.5 1.5 380 3.4 76 18 2.0 0.3 0.7 2.0 380 3.6 75 19 3.0 0.1 0.5 0.5 315 5.0 79 20 3.0 0.5 0.5 2.0 385 6.2 72 21 3.0 0.5 0.5 2.0 395 6.5 73 22 3.0 1.0 1.0 1.0 395 7.5 ------ 71 Note The remaining components are copper (Cu) 201207129 11 includes a gold coating 12, which is formed by electroplating outside the wire 11, of course It can also pass through the electric clock 'Chemical Vapor Deposition (CVD)' or other equivalent process. Therefore, the present embodiment can improve the oxidation resistance, stability, and product life by the metal characteristics of the gold coating 12. Alternatively, or in other aspects of the invention, the nickel (Ni) coating may be substituted for the gold coating 12, which is less expensive in material and also achieves good antioxidant properties. However, in other embodiments of the present invention, it is not necessary to use the gold coating 12, and the original wire 11 itself has considerable stability and oxidation resistance. It is not necessary to form gold or other metal on the surface of the wire 11. . 3, FIG. 3 is a flow chart of the first embodiment of the present invention. The manufacturing method of the first embodiment of the present invention as shown in the drawing includes the following steps: (A) A round bar body is prepared which is prepared by injecting a copper alloy melt into a mold and cooling it. Of course, this includes the step of first purifying the copper alloy blaze (not shown) to remove most of the impurities in the raw material. However, it cannot be avoided that it may be doped with a very small amount of impurities after purification. Further, the copper alloy melt includes silver in an amount of 0.1 to 3 wt%, an additive in an amount of 0.1 to 3 ν ΐ〇 / ί, and copper, and the additive is selected from the group consisting of nickel (Ni), platinum (Pt), and palladium ( At least one of Pd), tin (Sn), and gold (Au). Next, step (B) stretches the molded round bar into a wire. Among them, it is required that the Xi'an stretch molding 'including the breakdown drawing, the drawing, and the final drawing. Further, after the wire is formed, the wire is recrystallized through a step (C)'. In the present embodiment, the step (C) is carried out at a heat treatment of 201207129 under a reducing atmosphere of 4 〇〇 ° C to 650 ° C for 0.5 sec to 20 sec. However, the step (c) in the present embodiment further includes a step (D1) of quenching the wire. Wherein, the step (D1) of the present embodiment is a quenching treatment from 3 ° ° c to 4 ° C at a high temperature of about 2 seconds to 3 (rc ± 1 (rc. However, the quenching treatment of the present embodiment) Mainly adjust the grain structure of the wire surface, and then improve the mechanical properties of the wire. Finally, a step (E1), electroplating gold (Au) on the wire. According to this, gold plating to form a gold coating 12, which is mainly used Improve the stability of the wire and the oxidation resistance 'effectively avoid the oxidation of the wire, and affect the life and conductivity. · Please refer to FIG. 4, which is a cross-sectional view of the second embodiment of the copper wire for packaging of the present invention. The difference from the composition and composition of the first embodiment is mainly that 'the wire 11 is first coated with a nickel coating 13 and the nickel coating 13 is additionally covered with a gold coating ^ 2 ^ accordingly, the present embodiment For example, a better anti-oxidation effect can be obtained, and the service life can be further extended. See Figure 5, which is a flow chart of the second embodiment of the bonded copper wire for packaging of the present invention. First, step (A) is also performed first. Preparing a round bar which injects a silver alloy solution into a mold It is made after cooling. Of course, its φ includes the step of first purifying the copper alloy melt (not shown) to remove most of the impurities in the raw material. However, unavoidable, it may be doped with a very small amount after purification. Further, the copper alloy blaze includes silver in an amount of 1 to 3 wt%, 0.1 to 3 wt% of an additive in 3, and copper, and the additive is selected from the group consisting of nickel (Ni), neon (Pt), and palladium ( At least one of Pd), tin (Sn), and gold (Au). Next, step (B) stretches the molded round bar into a wire. Among them, it is also necessary to stretch the molding multiple times, including coarse stretching ( Breakd〇wn drawing), drawing, and final drawing. Further, after forming the wire 201207129, the wire is recrystallized through a step (c). In the present embodiment, the step (C) is a heat treatment at 600 ° C to 800 ° C for 1 second to 2 seconds, and a tempering treatment at 3 ° 0 ° C to 4 ° ° C for 1 second to 2 seconds. In this embodiment, the internal grain size is moderate and the distribution is more uniform by heating and tempering, so as to further adjust the appropriate The mechanical strength and the step (C) of the embodiment further include a step (D2) and a step (E2) for respectively plating nickel (Ni) and gold (Au) on the wire. Therefore, the embodiment The gold coating 12 is formed by first plating nickel and then electroplating gold, which is mainly used to improve the stability of the wire and oxidation resistance, effectively avoid oxidation of the wire, and affect the life 'and conductivity. The above embodiment is only for convenience. The scope of the present invention is defined by the scope of the claims, and is not limited to the above embodiments. [FIG. 1A] FIG. 1A is an embodiment of a preferred embodiment of the present invention. Schematic diagram of circuit application. FIG. 1B is a schematic diagram of an LED application according to a preferred embodiment of the present invention. Figure 2 is a cross-sectional view showing a first embodiment of the present invention. Figure 3 is a flow chart of the first embodiment of the present invention. Figure 4 is a cross-sectional view showing a second embodiment of the present invention. Figure 5 is a flow chart of a second embodiment of the present invention. 201207129 [Explanation of main component symbols] 1 Bonded copper wire 12 gold coating 11 wire 13 Nickel coating

Claims (1)

201207129 七、申請專利範園： 1. 一種封裝用之接合銅線，包括： 銀（Ag) ’其含量係〇.1〜3wt% ; 添加物，係至少一選自由鎳（Ni)、鉑（pt)、鈀（pd)、 錫（Sn)、及金（Au)所組成之群組，該添加物之含量係 0.1〜3wt% ;以及 銅（Cu); 其中’銅與銀共晶相體積率佔全部體積的〇.丨^% ; 鲁 該接合銀線抗拉強度在250MPa以上，導電率在7〇Q/〇IACS 以上。 2. 如申請專利範圍第1項所述之封裝用之接合銅 線’其外表面更包括有一金塗層。 3. —種封裝用之接合銅線之製造方法，包括以下步 驟： (A) ‘備一圓棒體’其係將—鋼合金炼液注入一 鑄模中冷卻後製成；其中，該銅合金熔液包括含量 _ 0·1〜3wt%的銀、含量0.1〜3wt%的添加物、以及銅，該添 加物係選自鎳（Ni)、鉑（Pt)、鈀（Pd)、錫（Sn)、及金（Au) 中至少其一； (B) 拉伸塑型該圓棒體成一線材；以及 (C) 再結晶處理該線材。 4. 如申請專利範圍第3項所述封裝用之接合銅線之 製造方法，其中，該步驟（C)係以40(TC〜65(rc持續〇5秒 〜20秒之還原氣氛下進行熱處理。 [S3 12 201207129 5·如申請專利範圍第3項所述封裝用之接合銅線之 製造方法，其中，該步驟(D1)更包括有一步驟： (E1)電鍍金（Au)於該線材。 6·如申請專利範圍第3項所述封裝用之接合銅線之 製造方法，其中，該步驟（c)係以60(rc 〜8〇〇t持續丨秒〜2〇 秒之急速加熱、及30(TC〜40(TC持續丨秒〜2〇秒之回火處 理。 ^ 7.如申請專利範圍第6項所述封裝用之接合線之製 造方法，其中，該步驟（C)更包括有一步驟： (D2)電鍍鎳（Ni)於該線材。 ,8.如申請專利範圍第7項所述封裝用之接合銀線之 製造方法，其中，該步驟（D2)更包括有一步驟： (E2)電鍍金（Au)於該線材。 9.如申請專利範圍第1至8項所述之封裝用之接人 銅線，其線徑在〇.〇7mm以下。 1 〇. —種積體電路（1C)或發光二極體（LED)，提特徵為 使用如申請專利範圍第1至9項中任何—項之接 合線。 ί S] 13201207129 VII. Application for Patent Park: 1. A joint copper wire for packaging, comprising: silver (Ag) 'the content is 〇.1~3wt%; the additive is at least one selected from nickel (Ni), platinum ( a group consisting of pt), palladium (pd), tin (Sn), and gold (Au), the content of the additive being 0.1 to 3 wt%; and copper (Cu); wherein 'copper and silver eutectic phase volume The rate accounts for 全部.丨^% of the whole volume; the tensile strength of the bonded silver wire is above 250MPa, and the electrical conductivity is above 7〇Q/〇IACS. 2. The joint copper wire for packaging as described in claim 1 of the invention has an outer surface further comprising a gold coating. 3. A method for manufacturing a bonded copper wire for packaging, comprising the steps of: (A) 'preparing a round bar body' which is formed by injecting a steel alloy refining liquid into a mold to be cooled; wherein the copper alloy is melted The liquid includes silver in an amount of _0·1 to 3 wt%, an additive in an amount of 0.1 to 3 wt%, and copper, and the additive is selected from the group consisting of nickel (Ni), platinum (Pt), palladium (Pd), and tin (Sn). And at least one of gold (Au); (B) stretching and shaping the round bar into a wire; and (C) recrystallizing the wire. 4. The method for producing a bonded copper wire for encapsulation according to the third aspect of the invention, wherein the step (C) is performed by heat treatment at 40 (TC to 65) in a reducing atmosphere of rc for 5 seconds to 20 seconds. [S3 12 201207129 5] The method for manufacturing a bonded copper wire for encapsulation according to claim 3, wherein the step (D1) further comprises a step of: (E1) electroplating gold (Au) on the wire. 6. The method for manufacturing a bonded copper wire for encapsulation according to claim 3, wherein the step (c) is performed at a rapid heating rate of 60 (rc ～8 〇〇t for a leap second to 2 〇 second, and 30 (TC~40 (TC) tempering treatment for 丨2 to 2 sec. ^ 7. The manufacturing method of the bonding wire for packaging according to claim 6, wherein the step (C) further includes Step: (D2) electroplating nickel (Ni) to the wire. 8. The method for manufacturing a bonded silver wire for packaging according to claim 7, wherein the step (D2) further comprises a step: (E2) Electroplating gold (Au) on the wire. 9. The copper wire for encapsulation as described in claims 1 to 8 of the patent application, the line The diameter is 〇.〇7mm or less. 1 〇. - The integrated circuit (1C) or the light-emitting diode (LED) is characterized by the use of a bonding wire as in any of the items 1 to 9 of the patent application. S] 13
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CN103219245B (en) * 2013-03-01 2015-11-25 溧阳市虹翔机械制造有限公司 A kind of manufacture method of palladium-plated bonded copper wire
CN103219247A (en) * 2013-03-01 2013-07-24 溧阳市虹翔机械制造有限公司 Manufacturing method of silver-plated bonding copper wire
CN103219249A (en) * 2013-03-01 2013-07-24 溧阳市虹翔机械制造有限公司 Manufacturing method of palladium-plated gold-plated double-plating bonding copper wire
CN103219248A (en) * 2013-03-01 2013-07-24 溧阳市虹翔机械制造有限公司 Manufacturing method of gold-plated bonding copper wire
CN103219312A (en) * 2013-03-01 2013-07-24 溧阳市虹翔机械制造有限公司 Palladium-plated gold-plated double-plating bonding copper wire
CN103219245A (en) * 2013-03-01 2013-07-24 溧阳市虹翔机械制造有限公司 Manufacturing method of palladium-plated bonding copper wire
CN103219312B (en) * 2013-03-01 2015-12-23 溧阳市虹翔机械制造有限公司 A kind ofly plate the gold-plated two coating bonding brass wires of palladium
CN103219247B (en) * 2013-03-01 2015-11-25 溧阳市虹翔机械制造有限公司 A kind of manufacture method of silver plated bonding copper wire
CN103219249B (en) * 2013-03-01 2016-01-06 溧阳市虹翔机械制造有限公司 A kind of manufacture method of plating the gold-plated two coating bonding brass wires of palladium
CN103219246A (en) * 2013-03-01 2013-07-24 溧阳市虹翔机械制造有限公司 Manufacturing method of palladium-plated silver-plated double-plating bonding copper wire
CN103745963A (en) * 2014-01-28 2014-04-23 铭凯益电子（昆山）有限公司 Copper-based lead and semiconductor packaging structure carried with same
CN103745963B (en) * 2014-01-28 2016-09-28 铭凯益电子（昆山）有限公司 Cuprio goes between and is loaded with the semiconductor package of cuprio lead-in wire
EP3136427A4 (en) * 2014-04-21 2018-03-14 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor device
US10950570B2 (en) 2014-04-21 2021-03-16 Nippon Steel Chemical & Material Co., Ltd. Bonding wire for semiconductor device
CN104835797B (en) * 2015-03-23 2017-09-26 辽宁凯立尔电子科技有限公司 A kind of copper palladium-silver bonding wire and preparation method thereof
CN104835797A (en) * 2015-03-23 2015-08-12 辽宁凯立尔电子科技有限公司 Copper-palladium-silver alloy bonding wire and method for preparing same
CN108315725A (en) * 2018-01-11 2018-07-24 广东禾木科技有限公司 A kind of minimizing technology of the impurity on silver bonding wire surface
TWI761657B (en) * 2018-03-28 2022-04-21 日商住友金屬鑛山股份有限公司 Copper alloy targets for forming solder joint electrodes and coatings for solder joint electrodes
CN111519227A (en) * 2020-03-30 2020-08-11 安徽广宇电子材料有限公司 Anti-oxidation treatment equipment of copper wire material for bonding wire preparation
CN111519227B (en) * 2020-03-30 2021-02-23 安徽广宇电子材料有限公司 Anti-oxidation treatment equipment of copper wire material for bonding wire preparation

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