CN104299954B - A kind of copper cash for semiconductor welding - Google Patents
A kind of copper cash for semiconductor welding Download PDFInfo
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- CN104299954B CN104299954B CN201410608243.3A CN201410608243A CN104299954B CN 104299954 B CN104299954 B CN 104299954B CN 201410608243 A CN201410608243 A CN 201410608243A CN 104299954 B CN104299954 B CN 104299954B
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- copper cash
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Conductive Materials (AREA)
Abstract
The present invention relates to semiconductor welding field of material technology, more particularly to a kind of copper cash for semiconductor welding, it is more than 99.99% copper and other silver medal of trace element 0~0.002%, 0~0.001% iron, 0~0.0005% lead, 0~0.0005% nickel, 0~0.0005% magnesium, 0~0.002% silicon by content, a diameter of 15~30 μm of copper cash is made by processes such as melting, stretch process, annealing heat-treats.Because copper content is more than 99.99% in the composition of copper cash, and control other micro- contents, using the copper cash of this alloying component, both the problem of having overcome high pure copper wire hardness, welding performance difference, there is the advantages of lower than gold thread cost again, and its electric conductivity and elongation percentage are high, good welding performance, ensure that the stability for semiconductor welding.
Description
Technical field
The present invention relates to semiconductor welding field of material technology, more particularly to a kind of copper cash for semiconductor welding.
Background technology
In semiconducter IC encapsulation, chip and lead frame（Substrate）Connection to realize that this lead is big by lead
Use gold line more.But gold is noble metal, as price of gold rises steadily, it is continuously increased the manufacturing cost of semiconductor devices,
Need to find metal that other are more suitable for for this to substitute gold thread material.Because the conductive energy of copper cash is good, inexpensive, maximum
Allow the advantages that electric current is high, high temperatures are high, people use copper cash to substitute gold thread to reduce material cost.But copper cash hair prolongs
Stretching property and inoxidizability do not have that gold thread is good, and the quality of copper cash is larger to welding efficiency and influential effect, cause copper cash and half
The problems such as conductor device layer gold or silver layer combine bad, hardly possible combination, and pulling force is inadequate.
In the prior art, the alloy material of gold and copper is used in order to improve the performance of copper cash, but the content of gold is more than
15%, although it improves the extensibility of copper cash, solderability is poor, and cost is high.
The content of the invention
There is provided that a kind of welding effect is good, cost is low it is an object of the invention to avoid weak point of the prior art
Copper cash for semiconductor welding.
The purpose of the present invention is achieved through the following technical solutions：
A kind of copper cash for semiconductor welding is provided, is made up of Cu alloy material, the Cu alloy material is by following heavy
The raw material of amount percentage is made：
Copper 99.99%~99.9999%；
Silver 0~0.002%；
Iron 0~0.001%；
Lead 0~0.0005%；
Nickel 0~0.0005%；
Magnesium 0~0.0005%；
Silicon 0~0.002%；
Above-mentioned raw materials are prepared according to following steps：
1）Copper material melting：By raw material according to proportioning melting, casting ingot-forming；
2）Stretch process：The first rough copper cash that a diameter of 8mm is made, the copper cash that moderate elongation is diameter 1mm is then carried out,
Further a diameter of 15~30 μm of copper cash is made in fineness stretching；
3）Annealing：Under the protection of argon gas, through 250~400 DEG C of vacuum annealings, reach required performance, be made
Described copper cash；
4）Product inspection, bundling, storage.
Preferably, the Cu alloy material is made up of the material of following percentage by weight：
Copper 99.99%~99.9999%；
Silver 0~0.001%；
Iron 0~0.005%；
Lead 0~0.0001%；
Nickel 0~0.0001%；
Magnesium 0~0.0005%；
Silicon 0~0.0005%.
Preferably, the Cu alloy material is made up of the material of following percentage by weight：
Copper 99.9978%；
Silver 0.0009%；
Iron 0.0003%；
Lead 0.0001%；
Nickel 0.0001%；
Magnesium 0.0003%；
Silicon 0.0005%.
Beneficial effects of the present invention：
A kind of copper cash for semiconductor welding of the present invention, by copper and other trace elements 0 of the content more than 99.99%
~0.002% silver medal, 0~0.001% iron, 0~0.0005% lead, 0~0.0005 nickel, 0~0.0005 magnesium, 0~0.002% silicon, pass through
A diameter of 15~30 μm of copper cash is made in the processes such as melting, stretch process, annealing heat-treats.Due to copper content in the composition of copper cash
More than 99.99%, and other micro- contents are controlled, using the copper cash of this alloying component, can both lift prolonging for copper cash
Rate is stretched, so as to improve welding effect, there is the advantages of lower than gold thread cost again.
Embodiment
The invention will be further described with the following Examples.
Embodiment 1
A kind of copper cash for semiconductor welding of the present invention, as shown in table 1, by the raw material system of following percentage by weight
Into：
Table 1. is used for the constituent table of the copper cash of semiconductor welding.
Above-mentioned raw materials are prepared according to following steps：
1）Copper material melting：By raw material according to proportioning melting, casting ingot-forming；
2）Stretch process：The first rough copper cash that a diameter of 8mm is made, the copper cash that moderate elongation is diameter 1mm is then carried out,
Further a diameter of 15~30 μm of copper cash is made in fineness stretching；
3）Annealing：Under the protection of argon gas, through 250~400 DEG C of vacuum annealings, reach required performance, be made
Described copper cash；
4）Product inspection, bundling, storage.
Embodiment 2
A kind of copper cash for semiconductor welding of the present invention, as shown in table 2, by the raw material system of following percentage by weight
Into：
Table 2. is used for the constituent table of the copper cash of semiconductor welding.
The preparation technology of copper cash is identical with embodiment 1.
As shown in table 3, the copper cash of embodiment 1 and embodiment 2 is subjected to properties test：
Table 3. is used for the measuring mechanical property result of the copper cash of semiconductor welding.
It can be obtained by test result, using the copper cash of the alloying component of the present invention, there is good elongation percentage, mechanical performance
It is good, welding effect is substantially increased, ensure that the stability for semiconductor welding, and main component is copper, its electric conductivity
Can be good, reduce production cost.
Finally it should be noted that above example is merely to illustrate technical scheme rather than the present invention is protected
The limitation of scope, although being explained in detail with reference to preferred embodiment to the present invention, one of ordinary skill in the art should manage
Solution, can modify or equivalent substitution to technical scheme, without departing from technical solution of the present invention essence and
Scope.
Claims (1)
1. a kind of copper cash for semiconductor welding, it is made up of Cu alloy material, it is characterised in that：The Cu alloy material by with
The raw material of lower percentage by weight is made：
Copper 99.9978%；
Silver 0.0009%；
Iron 0.0003%；
Lead 0.0001%；
Nickel 0.0001%；
Magnesium 0.0003%；
Silicon 0.0005%；
Above-mentioned raw materials are prepared according to following steps：
1）Copper material melting：By raw material according to proportioning melting, casting ingot-forming；
2）Stretch process：The first rough copper cash that a diameter of 8mm is made, then carry out moderate elongation and be diameter 1mm copper cash, then enter
A diameter of 15~30 μm of copper cash is made in the stretching of one step fineness；
3）Annealing：Under the protection of argon gas, through 250~400 DEG C of vacuum annealings, reach required performance, be made described
Copper cash；
4）Product inspection, bundling, storage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410608243.3A CN104299954B (en) | 2014-10-31 | 2014-10-31 | A kind of copper cash for semiconductor welding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410608243.3A CN104299954B (en) | 2014-10-31 | 2014-10-31 | A kind of copper cash for semiconductor welding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104299954A CN104299954A (en) | 2015-01-21 |
| CN104299954B true CN104299954B (en) | 2017-11-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410608243.3A Active CN104299954B (en) | 2014-10-31 | 2014-10-31 | A kind of copper cash for semiconductor welding |
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| CN (1) | CN104299954B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129034A (en) * | 2016-07-29 | 2016-11-16 | 王汉清 | A kind of copper bonding line for quasiconductor welding and preparation method thereof |
| CN106282646B (en) * | 2016-08-10 | 2018-10-12 | 安徽晋源铜业有限公司 | A kind of processing method of semiconductor welding copper wire |
| CN106298721B (en) * | 2016-08-19 | 2017-07-28 | 广东佳博电子科技有限公司 | A kind of bonding gold wire and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101386930A (en) * | 2007-09-15 | 2009-03-18 | 山东华宏微电子材料科技有限公司 | Method of preparing linking copper wire |
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2014
- 2014-10-31 CN CN201410608243.3A patent/CN104299954B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101386930A (en) * | 2007-09-15 | 2009-03-18 | 山东华宏微电子材料科技有限公司 | Method of preparing linking copper wire |
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| CN104299954A (en) | 2015-01-21 |
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Effective date of registration: 20210720 Address after: 528400 1st floor, building 6, No.1 MuLinSen Avenue, Xiaolan Town, Zhongshan City, Guangdong Province Patentee after: Zhongshan MuLinSen Microelectronics Co.,Ltd. Address before: 528415 Zhongshan, Guangdong, Zhongshan, Xiaolan Town, 1 Patentee before: MLS Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder |
Address after: 528400 1st floor, building 6, No.1 MuLinSen Avenue, Xiaolan Town, Zhongshan City, Guangdong Province Patentee after: Zhongshan Zhuoman Microelectronics Co.,Ltd. Address before: 528400 1st floor, building 6, No.1 MuLinSen Avenue, Xiaolan Town, Zhongshan City, Guangdong Province Patentee before: Zhongshan MuLinSen Microelectronics Co.,Ltd. |