CN106282646B - A kind of processing method of semiconductor welding copper wire - Google Patents
A kind of processing method of semiconductor welding copper wire Download PDFInfo
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- CN106282646B CN106282646B CN201610650018.5A CN201610650018A CN106282646B CN 106282646 B CN106282646 B CN 106282646B CN 201610650018 A CN201610650018 A CN 201610650018A CN 106282646 B CN106282646 B CN 106282646B
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C37/00—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape
- B21C37/04—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of bars or wire
- B21C37/047—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of bars or wire of fine wires
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
Abstract
The present invention discloses a kind of processing method of semiconductor welding copper wire, includes the following steps：S1 percentage compositions by weight are by Ag0.01 0.03%, Fe0.01 0.03%, Ni0.005 0.01%, P0.003 0.008%, B0.001 0.003%, Pd0.003 0.006%, Nb0.001 0.003%, rare earth member 0.008 0.012%, surplus are after oxygen-free copper mixes, melting in coreless induction furnace is added, oriented solidification obtains copper bar base；S2 will carry out hot rolling after copper bar base, cold rolling processing is carried out after scale removal；Copper busbar is carried out multi pass drawing by S3, and carries out intermediate continuous annealing, obtains the semiconductor welding copper wire.The present invention proposes a kind of processing method of semiconductor welding copper wire, and processing obtained copper wire has extensibility height, inoxidizability strong, the good advantage of solderability.
Description
Technical field
The present invention relates to electrician copper technology field more particularly to a kind of processing methods of semiconductor welding copper wire.
Background technology
In semiconducter IC encapsulation, the connection of chip and lead frame (substrate) will realize that this lead is big by lead
Mostly use gold line.However gold is noble metal, as price of gold rises steadily, the manufacturing cost of semiconductor devices is made to be continuously increased,
It needs to find the metal that other are more suitable for thus to substitute gold thread material.Since the conductive energy of copper wire is good, inexpensive, maximum
Allow the advantages that electric current is high, high temperatures are high, people that copper wire is used to substitute gold thread to reduce material cost.But copper wire prolongs
Stretching property and inoxidizability do not have that gold thread is good, and the quality of copper wire is larger to welding efficiency and influential effect, cause copper wire and half
Conductor device layer gold or silver layer are in conjunction with the problems such as bad, hardly possible combines, and pulling force is inadequate.
In the prior art, golden and copper alloy material is used to improve the performance of copper wire, but the content of gold is more than
15%, although improving the extensibility of copper wire, solderability is poor, and of high cost.
Invention content
Technical problems based on background technology, the present invention propose a kind of processing side of semiconductor welding copper wire
Method, processing obtained copper wire has extensibility height, inoxidizability strong, the good advantage of solderability.
A kind of processing method of semiconductor welding copper wire proposed by the present invention, includes the following steps：
S1, by weight percentage composition are by Ag 0.01-0.03%, Fe 0.01-0.03%, Ni 0.005-0.01%, P
0.003-0.008%, B 0.001-0.003%, Pd 0.003-0.006%, Nb 0.001-0.003%, surplus be purity >=
It after 99.99% oxygen-free copper mixing, is added in coreless induction furnace carries out melting under nitrogen protection, be warming up to 1220-1250 DEG C, heat preservation
Melt is obtained completely to fusing, and after refining 20-40min, oriented solidification obtains the copper bar base of a diameter of 10-15mm；
S2, hot rolling is carried out after the copper bar base obtained in S1 is heated to 950-980 DEG C, obtains a diameter of 2-4mm's
Copper busbar, finishing temperature are 730-750 DEG C, and it is 35- that sectional shrinkage will be carried out after the scale removal of the copper busbar milling face
45% cold rolling processing, makes annealing treatment 2-6min under 570-600 DEG C of annealing temperature, then it is 15- to carry out sectional shrinkage
25% cold rolling processing, makes annealing treatment 1-5min under 530-550 DEG C of annealing temperature, then it is 5-10% to carry out sectional shrinkage
Cold rolling processing；
S3, the copper busbar obtained in S2 is subjected to multi pass drawing, obtains the copper wire of a diameter of 0.01-0.05mm, and
Intermediate continuous annealing is carried out between different passage drawings, annealing temperature is 480-510 DEG C, and annealing speed 130-180rpm is obtained
To the semiconductor welding copper wire.
Preferably, in S1, ([Fe]+[Ni]):[P]=5-6, [Fe] are weight percentages of the Fe in melt,
[Ni] is weight percentages of the Ni in melt, and [P] is weight percentages of the P in melt.
Preferably, in S1, the rare earth element is the combination of one or more of lanthanum La, cerium Ce, yttrium Y, gadolinium Gd.
Preferably, it in S1, is warming up to during 1220-1250 DEG C, T=e is met in temperature-rise periodt-5, T is warming temperature,
The unit of T is DEG C that t is the heating-up time, and the unit of t is min.
Preferably, in S2, hot rolling is arranged using Y250-8 type three-roller continuous rolling mills, and in the operation of rolling, the copper bar base is first rolled
To a diameter of 7-8mm, rerolls to a diameter of 5-6mm, be finally rolled to a diameter of 2-4mm.
Preferably, in S2,4min is first made annealing treatment under 580 DEG C of annealing temperature, then moved back under 540 DEG C of annealing temperature
Fire processing 3min.
Preferably, in S3, when underway continuous annealing, is passed through the mixed gas of nitrogen and hydrogen, and the flow of nitrogen is
The flow of 6-8L/min, hydrogen are 0.5-1L/min.
Compared to the prior art, the processing method of a kind of semiconductor welding copper wire proposed by the present invention, on the one hand, in height
Under conditions of purity nitrogen gas shielded, alloy progress melting is added into high-purity oxygen-free copper, by controlling rational proportioning, in copper melt
In introduce alloying element Ag, Fe, Ni, P, Mg, B, Nb and rare earth, wherein the addition of Ag in addition to utilize excellent conduction itself
Property conductivity to improve copper wire other than, invigoration effects of the Ag to copper is also utilized, to make the intensity and toughness properties of copper alloy
It is improved simultaneously, thus to obtain good extension property, in addition to this, Ag also may make Copper substrate to be in saturation state, promote
The alloying element of Fe and P in Copper substrate are further precipitated, that is, increase the quantity of the second particle precipitated phase in copper wire alloy, after
Person influences the conductivity of copper smaller in addition to that can improve copper wire alloy ductility；It is added, is conducive to while Fe, Ni, P three
Complex intensifying phase is formed in copper wire material, the latter can increase substantially the intensity and extension property of copper wire material, but due to
Fe, Ni will excessively make the deterioration of the processing performance and electric conductivity of alloy with respect to P, and cross major general and be difficult to reach precipitation strength
Purpose, therefore control Fe, Ni, P content and suitable ratio have a significant effect for the improved combination properties of copper wire；
Further, since rare earth element and the atom size of copper and the difference of valence electron, therefore to the conductivity of copper conductors after alloying
Substantially it does not influence, it is ensured that the conductivity of conduction copper wire, and rare earth element so that melt crystal grain is refined simultaneously, from
And the extension property of copper wire is preferably improved, copper wire plastic processing ability is improved, and reduce to a certain extent durometer properties
Energy；And although the affinity of B and oxygen is not as good as rare earth, B has Grain refinement more significant than rare earth in copper and copper alloy,
Therefore can preferably improve the mechanical property and electric conductivity of copper wire, and rare earth and B compoundings alloying can more added with
The effect for playing purification, controlled micro crystallization etc. of effect makes impurity in copper reduce, and distortion of lattice weakens, and electron scattering probability is reduced, for
Improve plastic processing and the conductivity significant effect of copper wire alloy；In addition, the compounding addition of micro Nb, Pd can be carried obviously
The oxidation resistance of high-copper has deoxidation to copper, therefore the oxidation proof propertiess of acquired copper wire alloy are notable.
On the other hand, in order to further improve the mechanics and electric conductivity of copper wire alloy, in addition to copper wire in the present invention
Other than alloy element is selected, stringent control has also been carried out to its processing technology, has been melted first to copper wire alloy
In refining, selection high pure nitrogen protection under carry out so that do not contacted with air in fusion process, thus can obtain it is oxygen-containing and other
At the same time the few copper wire alloy of gas further defines heating rate during alloy molten in fusion process, with adaptation
The solubility rule of each alloying element, so as to adjust the solute Distribution in Copper substrate, to improving alloy mechanics and conduction
Property have remarkable result；Hereafter use the technique of directional solidification that copper bar base is made, this technique makes the solidified structure of strand take
To consistent, show than drawing the superior plastic deformation ability of copper bar on common；Multistage rolling also carried out to bar base, and by
When grade carries out annealing, the control of hot rolling technology so that the solid solution in copper wire alloy is uniform, Dispersed precipitate is in matrix
In, then when carrying out multistage cold-rolling process, solid solution particle is flattened, is elongated by gradual, forms that some billets are band-like and part is long
Threadiness distribution, and hot rolling and cold-rolling process also so that the casting flaws such as stomata, the micro-crack in alloy disappear simultaneously, and by coarse
Column crystal become the equiax crystal of fine uniform, can be with while by being made annealing treatment respectively to the alloy after cold rolling step by step
Size, form and its distribution of precipitated phase effectively in control copper wire alloy process, therefore, the copper after the rolling
Line alloy, working hardening, solution strengthening and refined crystalline strengthening are with obvious effects, and the comprehensive performance for improving copper wire has notable
Effect, help to obtain a kind of copper wire alloy product of high-ductility；The copper wire of last suitable diameter size in order to obtain, it is also right
Wire rod carries out multi pass drawing and simultaneously anneals, and can alloy be further changed into fine uniform, fine and close recrystallized structure, and
When being annealed under inert gas shielding, the defects of eliminating residual stress, reduce dislocation, vacancy, the electric conductivity of copper wire also obtains
To improvement, to solve traditional copper wire easy fracture, oxidizable and be not easy the influence welded, and thus processing obtain it is a kind of suitable
The copper wire of semiconductor welding.
In summary, the present invention is from the conduction of copper wire, extensibility, antioxygenic property, to producing the alloy member of copper wire
Plain species content is rationally designed, hence it is evident that is improved the elongation percentage of copper wire, anti-oxidant and resistivity, is kept its comprehensive performance notable
It improves；At the same time, the plasticity, conduction and antioxygenic property for further improving copper wire using rational processing technology, to molten
Refining, hot rolling, cold rolling are annealed, and the temperature and technological parameter in drawing process optimize so that the conduction of copper wire, plasticity, weldering
It the performances such as connects all to be well controlled, entire processing method forms mutually matched entirety.
Specific implementation mode
In the following, technical scheme of the present invention is described in detail by specific embodiment.
Embodiment 1
A kind of processing method of semiconductor welding copper wire proposed by the present invention, includes the following steps：
S1, by weight percentage composition are by Ag 0.01%, Fe 0.03%, Ni 0.005%, P 0.008%, B
0.001%, Pd 0.006%, Nb 0.001%, La 0.012%, after surplus is the oxygen-free copper mixing of purity >=99.99%,
It is added in coreless induction furnace under nitrogen protection and carries out melting, be warming up to 1220 DEG C, heat preservation to fusing obtains melt completely, refines 40min
Afterwards, oriented solidification obtains the copper bar base of a diameter of 10mm；
S2, hot rolling is carried out after the copper bar base obtained in S1 is heated to 950 DEG C, obtains the copper busbar of a diameter of 4mm,
Finishing temperature is 730 DEG C, and the cold rolling that sectional shrinkage is 45% will be carried out after the scale removal of the copper busbar milling face and is processed,
6min is made annealing treatment under 570 DEG C of annealing temperature, then carries out the cold rolling that sectional shrinkage is 15% and processes, in 550 DEG C of annealing
At a temperature of make annealing treatment 1min, then carry out sectional shrinkage be 10% cold rolling process；
S3, the copper busbar obtained in S2 is subjected to multi pass drawing, obtains the copper wire of a diameter of 0.01mm, and in not people having a common goal
Intermediate continuous annealing is carried out between secondary drawing, and is passed through the mixed gas of nitrogen and hydrogen, and the flow of nitrogen is 8L/min, hydrogen
Flow be 0.5L/min, annealing temperature be 510 DEG C, annealing speed 130rpm, obtain the semiconductor welding copper wire.
Embodiment 2
A kind of processing method of semiconductor welding copper wire proposed by the present invention, includes the following steps：
S1, by weight percentage composition by Ag 0.03%, Fe 0.01%, Ni 0.01%, P 0.003%, B 0.003%,
Pd 0.003%, Nb 0.003%, Ce 0.008%, surplus are after the oxygen-free copper of purity >=99.99% mixes, in nitrogen protection
Melting is carried out in lower addition coreless induction furnace, is warming up to 1250 DEG C, heat preservation to fusing obtains melt completely, oriented after refining 20min
Solidification obtains the copper bar base of a diameter of 15mm；
S2, hot rolling is carried out after the copper bar base obtained in S1 is heated to 980 DEG C, obtains the copper busbar of a diameter of 2mm,
Finishing temperature is 750 DEG C, and the cold rolling that sectional shrinkage is 35% will be carried out after the scale removal of the copper busbar milling face and is processed,
2min is made annealing treatment under 600 DEG C of annealing temperature, then carries out the cold rolling that sectional shrinkage is 25% and processes, in 530 DEG C of annealing
At a temperature of make annealing treatment 5min, then carry out sectional shrinkage be 5% cold rolling process；
S3, the copper busbar obtained in S2 is subjected to multi pass drawing, obtains the copper wire of a diameter of 0.05mm, and in not people having a common goal
Intermediate continuous annealing is carried out between secondary drawing, and is passed through the mixed gas of nitrogen and hydrogen, and the flow of nitrogen is 6L/min, hydrogen
Flow be 1L/min, annealing temperature be 480 DEG C, annealing speed 180rpm, obtain the semiconductor welding copper wire.
Embodiment 3
A kind of processing method of semiconductor welding copper wire proposed by the present invention, includes the following steps：
S1, by weight percentage composition are by Ag 0.02%, Fe 0.02%, Ni 0.007%, P 0.005%, B
0.002%, Pd 0.004%, Nb 0.002%, Y 0.001%, after surplus is the oxygen-free copper mixing of purity >=99.99%,
It is added in coreless induction furnace under nitrogen protection and carries out melting, be warming up to 1230 DEG C, heat preservation to fusing obtains melt completely, refines 30min
Afterwards, oriented solidification obtains the copper bar base of a diameter of 12mm；
S2, hot rolling is carried out after the copper bar base obtained in S1 is heated to 960 DEG C, obtains the copper busbar of a diameter of 3mm,
Finishing temperature is 740 DEG C, and the cold rolling that sectional shrinkage is 40% will be carried out after the scale removal of the copper busbar milling face and is processed,
4min is made annealing treatment under 580 DEG C of annealing temperature, then carries out the cold rolling that sectional shrinkage is 20% and processes, in 540 DEG C of annealing
At a temperature of make annealing treatment 3min, then carry out sectional shrinkage be 7% cold rolling process；
S3, the copper busbar obtained in S2 is subjected to multi pass drawing, obtains the copper wire of a diameter of 0.03mm, and in not people having a common goal
Intermediate continuous annealing is carried out between secondary drawing, and is passed through the mixed gas of nitrogen and hydrogen, and the flow of nitrogen is 7L/min, hydrogen
Flow be 0.7L/min, annealing temperature be 500 DEG C, annealing speed 150rpm, obtain the semiconductor welding copper wire.
Embodiment 4
A kind of processing method of semiconductor welding copper wire proposed by the present invention, includes the following steps：
S1, by weight percentage composition are by Ag 0.02%, Fe 0.02%, Ni 0.008%, P 0.006%, B
0.002%, Pd 0.005%, Nb 0.002%, rare earth element 0.0011%, surplus are that the oxygen-free copper of purity >=99.99% is mixed
After conjunction, the rare earth element is Y and Gd, is added in coreless induction furnace carries out melting under nitrogen protection, is warming up to 1240 DEG C, heat preservation is extremely
Fusing obtains melt completely, and after refining 35min, oriented solidification obtains the copper bar base of a diameter of 13mm；
S2, hot rolling is carried out after the copper bar base obtained in S1 is heated to 970 DEG C, obtains the copper busbar of a diameter of 3mm,
Finishing temperature is 745 DEG C, and the cold rolling that sectional shrinkage is 42% will be carried out after the scale removal of the copper busbar milling face and is processed,
3min is made annealing treatment under 590 DEG C of annealing temperature, then carries out the cold rolling that sectional shrinkage is 18% and processes, in 545 DEG C of annealing
At a temperature of make annealing treatment 4min, then carry out sectional shrinkage be 8% cold rolling process；
S3, the copper busbar obtained in S2 is subjected to multi pass drawing, obtains the copper wire of a diameter of 0.02mm, and in not people having a common goal
Intermediate continuous annealing is carried out between secondary drawing, and is passed through the mixed gas of nitrogen and hydrogen, and the flow of nitrogen is 7L/min, hydrogen
Flow be 0.8L/min, annealing temperature be 490 DEG C, annealing speed 160rpm, obtain the semiconductor welding copper wire.
The semiconductor welding obtained in above-described embodiment 1-4 is tested with copper wire, half-hard state test result meets
Tensile strength >=200MPa, yield strength >=160MPa, elongation >=15%, resistivity are 0.01691-0.01719 Ω mm2/m
(conductivity >=98%IACS).
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Any one skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (6)
1. a kind of processing method of semiconductor welding copper wire, which is characterized in that include the following steps：
S1, by weight percentage composition are by Ag 0.01-0.03%, Fe 0.01-0.03%, Ni 0.005-0.01%, P 0.003-
0.008%, B 0.001-0.003%, Pd 0.003-0.006%, Nb 0.001-0.003%, rare earth element 0.008-0.012%, it is remaining
Amount is after the oxygen-free copper of purity >=99.99% mixes, to be added in coreless induction furnace carry out melting under nitrogen protection, be warming up to 1220-
1250 DEG C, heat preservation to fusing obtains melt completely, and after refining 20-40min, oriented solidification obtains the copper of a diameter of 10-15mm
Bar base；
S2, hot rolling is carried out after the copper bar base obtained in S1 is heated to 950-980 DEG C, the copper for obtaining a diameter of 2-4mm is female
Line, finishing temperature are 730-750 DEG C, and it is the cold of 35-45% that sectional shrinkage will be carried out after the scale removal of the copper busbar milling face
Processing is rolled, 2-6min is made annealing treatment under 570-600 DEG C of annealing temperature, then carries out the cold rolling that sectional shrinkage is 15-25% and adds
Work makes annealing treatment 1-5min under 530-550 DEG C of annealing temperature, then carries out the cold rolling that sectional shrinkage is 5-10% and process；
S3, the copper busbar obtained in S2 is subjected to multi pass drawing, obtains the copper wire of a diameter of 0.01-0.05mm, and in difference
Intermediate continuous annealing is carried out between passage drawing, annealing temperature is 480-510 DEG C, and annealing speed 130-180rpm obtains institute
State semiconductor welding copper wire；
In S1,（[Fe]+[Ni]）:[P]=5-6, [Fe] are weight percentages of the Fe in melt, and [Ni] is Ni in melt
In weight percentage, [P] be weight percentages of the P in melt.
2. the processing method of semiconductor welding copper wire according to claim 1, which is characterized in that in S1, the rare earth member
Element is the combination of one or more of lanthanum La, cerium Ce, yttrium Y, gadolinium Gd.
3. the processing method of semiconductor welding copper wire according to claim 1 or claim 2, which is characterized in that in S1, be warming up to
During 1220-1250 DEG C, meet in temperature-rise period, T is warming temperature, and the unit of T is DEG C, when t is heating
Between, the unit of t is min.
4. the processing method of semiconductor welding copper wire according to claim 1 or claim 2, which is characterized in that in S2, hot rolling uses
Y250-8 type three-roller continuous rolling mills arrange, and in the operation of rolling, the copper bar base are first rolled to a diameter of 7-8mm, is rerolled to a diameter of 5-
6mm is finally rolled to a diameter of 2-4mm.
5. the processing method of semiconductor welding copper wire according to claim 1 or claim 2, which is characterized in that in S2, first 580
DEG C annealing temperature under make annealing treatment 4min, then make annealing treatment 3min under 540 DEG C of annealing temperature.
6. the processing method of semiconductor welding copper wire according to claim 1 or claim 2, which is characterized in that underway in S3
Between continuous annealing when be passed through the mixed gas of nitrogen and hydrogen, the flow of nitrogen is 6-8L/min, and the flow of hydrogen is 0.5-1L/
min。
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| CN108231600B (en) * | 2017-12-30 | 2020-07-10 | 安徽晋源铜业有限公司 | Processing method of bonding copper wire for packaging |
| CN108118182A (en) * | 2017-12-30 | 2018-06-05 | 安徽晋源铜业有限公司 | A kind of processing method of integrated antenna package plating palladium copper wire |
| CN109003743A (en) * | 2018-07-25 | 2018-12-14 | 王文芳 | A kind of production method of the superfine conductor of continuous copper alloy |
| CN110038918B (en) * | 2019-05-28 | 2020-08-11 | 江西凯安智能股份有限公司 | Processing technology of high-strength high-conductivity pure copper wire |
| CN113560365B (en) * | 2021-07-22 | 2023-08-15 | 诺克威新材料(江苏)有限公司 | Processing method for improving wiredrawing strength of copper alloy |
| CN114807671B (en) * | 2022-06-14 | 2022-09-30 | 西安理工大学 | Method for preparing high-strength and high-wear-resistance copper-boron alloy through hot extrusion and cold forging |
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| TW200706660A (en) * | 2005-07-07 | 2007-02-16 | Kobe Steel Ltd | Copper alloy having high strength and superior bending workability, and method for manufacturing copper alloy plates |
| CN101525703A (en) * | 2009-03-08 | 2009-09-09 | 聊城北科电子信息材料有限公司 | Semiconductor device brazing wire and preparation technology thereof |
| CN104299954A (en) * | 2014-10-31 | 2015-01-21 | 木林森股份有限公司 | Copper wire for semiconductor welding |
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| JPS61113740A (en) * | 1984-11-09 | 1986-05-31 | Tanaka Denshi Kogyo Kk | Bonding use copper wire of semiconductor element |
| TW200706660A (en) * | 2005-07-07 | 2007-02-16 | Kobe Steel Ltd | Copper alloy having high strength and superior bending workability, and method for manufacturing copper alloy plates |
| CN101525703A (en) * | 2009-03-08 | 2009-09-09 | 聊城北科电子信息材料有限公司 | Semiconductor device brazing wire and preparation technology thereof |
| CN104299954A (en) * | 2014-10-31 | 2015-01-21 | 木林森股份有限公司 | Copper wire for semiconductor welding |
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