CN104299954A - Copper wire for semiconductor welding - Google Patents
Copper wire for semiconductor welding Download PDFInfo
- Publication number
- CN104299954A CN104299954A CN201410608243.3A CN201410608243A CN104299954A CN 104299954 A CN104299954 A CN 104299954A CN 201410608243 A CN201410608243 A CN 201410608243A CN 104299954 A CN104299954 A CN 104299954A
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- Prior art keywords
- copper
- copper cash
- copper wire
- semiconductor
- welding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Conductive Materials (AREA)
Abstract
The invention relates to the technical field of semiconductor welding materials, in particular to a copper wire for semiconductor welding. The copper wire comprises more than 99.99% of copper and other microelements including 0-0.002% of silver, 0-0.001% of Fe, 0-0.0005% of lead, 0-0.0005% of nickel, 0-0.0005% of magnesium and 0-0.002% of silicon, and the copper wire with the diameter ranging from 15 microns to 30 microns is manufactured through the procedures such as smelting, stretching and annealing heat treatment. Due to the fact that the content of copper in the copper wire is larger than 99.99%, and the content of other microelements is controlled, the copper wire with the alloy component solves the problems that a pure copper wire is high in hardness and poor in welding performance, has the advantage of being lower in cost compared with the cost of a gold wire, the electrical conductivity and elongation of the copper wire are high, the welding performance is good, and the stability of welding of a semiconductor is guaranteed.
Description
Technical field
The present invention relates to semiconductor technical field of welding materials, particularly relate to a kind of copper cash for semiconductor welding.
Background technology
In semiconducter IC encapsulation, the connection of chip and lead frame (substrate) will realize by lead-in wire, and this lead-in wire adopts proof gold line mostly.But gold is noble metal, along with price of gold rises steadily, the manufacturing cost of semiconductor device is constantly increased, need to find other metals be more suitable for for this reason and carry out alternative gold thread material.Conduct electricity very well because copper cash has, low cost, maximum permissible current are high, high temperatures advantages of higher, people adopt copper cash to substitute gold thread to reduce material cost.But copper cash sends out extensibility and non-oxidizability does not have gold thread good, and the quality of copper cash is comparatively large to welding efficiency and influential effect, causes copper cash and semiconductor device layer gold or silver layer in conjunction with bad, difficult combination, the problems such as pulling force is inadequate.
In prior art, adopt alloy material that is golden and copper to improve the performance of copper cash, the content of gold is greater than 15%, although it improves the extensibility of copper cash, but solderability is poor, and cost is high.
Summary of the invention
The object of the invention is to avoid weak point of the prior art and the copper cash for semiconductor welding that a kind of welding effect is good, cost is low is provided.
Object of the present invention is achieved through the following technical solutions:
There is provided a kind of copper cash for semiconductor welding, be made up of Cu alloy material, described Cu alloy material is made up of the raw material of following percentage by weight:
Copper 99.99% ~ 99.9999%;
Silver 0 ~ 0.002%;
Iron 0 ~ 0.001%;
Plumbous 0 ~ 0.0005%;
Nickel 0 ~ 0.0005%;
Magnesium 0 ~ 0.0005%;
Silicon 0 ~ 0.002%;
Above-mentioned raw materials is prepared from according to following steps:
1) copper material melting: by raw material according to proportioning melting, casting ingot-forming;
2) stretch process: elder generation is rough makes the copper cash that diameter is 8mm, then carries out the copper cash that moderate elongation is diameter 1mm, then the copper cash that diameter is 15 ~ 30 μm is made in fineness stretching further;
3) annealing in process: under the protection of argon gas, through 250 ~ 400 DEG C of vacuum annealings, reaches required performance, makes described copper cash;
4) product inspection, bundling, warehouse-in.
preferably,described Cu alloy material is made up of the material of following percentage by weight:
Copper 99.99% ~ 99.9999%;
Silver 0 ~ 0.001%;
Iron 0 ~ 0.005%;
Plumbous 0 ~ 0.0001%;
Nickel 0 ~ 0.0001%;
Magnesium 0 ~ 0.0005%;
Silicon 0 ~ 0.0005%.
preferably,described Cu alloy material is made up of the material of following percentage by weight:
Copper 99.9978%;
Silver 0.0009%;
Iron 0.0003%;
Plumbous 0.0001%;
Nickel 0.0001%;
Magnesium 0.0003%;
Silicon 0.0005%.
beneficial effect of the present invention:
A kind of copper cash for semiconductor welding of the present invention, be greater than the copper of 99.99% and other trace element 0 ~ 0.002% silver medals, 0 ~ 0.001% iron, 0 ~ 0.0005% lead, 0 ~ 0.0005 nickel, 0 ~ 0.0005 magnesium, 0 ~ 0.002% silicon by content, make through operations such as melting, stretch process, annealing heat treatments the copper cash that diameter is 15 ~ 30 μm.Because in the composition of copper cash, copper content is greater than 99.99%, and control the content of other trace elements, adopt the copper cash of this alloying component, both can promote the elongation of copper cash, thus improve welding effect, there is again the advantage lower than gold thread cost.
Embodiment
The invention will be further described with the following Examples.
embodiment 1
A kind of copper cash for semiconductor welding of the present invention, as shown in table 1, be made up of the raw material of following percentage by weight:
The constituent table of the copper cash that table 1. welds for semiconductor.
Above-mentioned raw materials is prepared from according to following steps:
1) copper material melting: by raw material according to proportioning melting, casting ingot-forming;
2) stretch process: elder generation is rough makes the copper cash that diameter is 8mm, then carries out the copper cash that moderate elongation is diameter 1mm, then the copper cash that diameter is 15 ~ 30 μm is made in fineness stretching further;
3) annealing in process: under the protection of argon gas, through 250 ~ 400 DEG C of vacuum annealings, reaches required performance, makes described copper cash;
4) product inspection, bundling, warehouse-in.
embodiment 2
A kind of copper cash for semiconductor welding of the present invention, as shown in table 2, be made up of the raw material of following percentage by weight:
The constituent table of the copper cash that table 2. welds for semiconductor.
The preparation technology of copper cash and the identical of embodiment 1.
As shown in table 3, the copper cash of embodiment 1 and embodiment 2 is carried out properties test:
The measuring mechanical property result of the copper cash that table 3. welds for semiconductor.
Can be obtained by test result, adopt the copper cash of alloying component of the present invention, there is good elongation, good mechanical property, substantially increases welding effect, ensure that the stability for semiconductor welding, and main component is copper, it conducts electricity very well, and reduces production cost.
Finally should be noted that; above embodiment is only for illustration of technical scheme of the present invention but not limiting the scope of the invention; although be explained in detail the present invention with reference to preferred embodiment; those of ordinary skill in the art is to be understood that; can modify to technical scheme of the present invention or equivalent replacement, and not depart from essence and the scope of technical solution of the present invention.
Claims (3)
1., for a copper cash for semiconductor welding, be made up of Cu alloy material, it is characterized in that: described Cu alloy material is made up of the raw material of following percentage by weight:
Copper 99.99% ~ 99.9999%;
Silver 0 ~ 0.002%;
Iron 0 ~ 0.001%;
Plumbous 0 ~ 0.0005%;
Nickel 0 ~ 0.0005%;
Magnesium 0 ~ 0.0005%;
Silicon 0 ~ 0.002%;
Above-mentioned raw materials is prepared from according to following steps:
1) copper material melting: by raw material according to proportioning melting, casting ingot-forming;
2) stretch process: elder generation is rough makes the copper cash that diameter is 8mm, then carries out the copper cash that moderate elongation is diameter 1mm, then the copper cash that diameter is 15 ~ 30 μm is made in fineness stretching further;
3) annealing in process: under the protection of argon gas, through 250 ~ 400 DEG C of vacuum annealings, reaches required performance, makes described copper cash;
4) product inspection, bundling, warehouse-in.
2. a kind of copper cash for semiconductor welding according to claim 1, is characterized in that: described Cu alloy material is made up of the material of following percentage by weight:
Copper 99.99% ~ 99.9999%;
Silver 0 ~ 0.001%;
Iron 0 ~ 0.005%;
Plumbous 0 ~ 0.0001%;
Nickel 0 ~ 0.0001%;
Magnesium 0 ~ 0.0005%;
Silicon 0 ~ 0.0005%.
3. a kind of copper cash for semiconductor welding according to claim 2, is characterized in that: described Cu alloy material is made up of the material of following percentage by weight:
Copper 99.9978%;
Silver 0.0009%;
Iron 0.0003%;
Plumbous 0.0001%;
Nickel 0.0001%;
Magnesium 0.0003%;
Silicon 0.0005%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410608243.3A CN104299954B (en) | 2014-10-31 | 2014-10-31 | A kind of copper cash for semiconductor welding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410608243.3A CN104299954B (en) | 2014-10-31 | 2014-10-31 | A kind of copper cash for semiconductor welding |
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| Publication Number | Publication Date |
|---|---|
| CN104299954A true CN104299954A (en) | 2015-01-21 |
| CN104299954B CN104299954B (en) | 2017-11-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410608243.3A Active CN104299954B (en) | 2014-10-31 | 2014-10-31 | A kind of copper cash for semiconductor welding |
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| Country | Link |
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| CN (1) | CN104299954B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129034A (en) * | 2016-07-29 | 2016-11-16 | 王汉清 | A kind of copper bonding line for quasiconductor welding and preparation method thereof |
| CN106282646A (en) * | 2016-08-10 | 2017-01-04 | 安徽晋源铜业有限公司 | A kind of processing method of quasiconductor welding copper cash |
| CN106298721A (en) * | 2016-08-19 | 2017-01-04 | 广东佳博电子科技有限公司 | A kind of bonding gold wire and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101386930B (en) * | 2007-09-15 | 2011-05-11 | 山东华宏微电子材料科技有限公司 | Method of preparing linking copper wire |
-
2014
- 2014-10-31 CN CN201410608243.3A patent/CN104299954B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129034A (en) * | 2016-07-29 | 2016-11-16 | 王汉清 | A kind of copper bonding line for quasiconductor welding and preparation method thereof |
| CN106282646A (en) * | 2016-08-10 | 2017-01-04 | 安徽晋源铜业有限公司 | A kind of processing method of quasiconductor welding copper cash |
| CN106282646B (en) * | 2016-08-10 | 2018-10-12 | 安徽晋源铜业有限公司 | A kind of processing method of semiconductor welding copper wire |
| CN106298721A (en) * | 2016-08-19 | 2017-01-04 | 广东佳博电子科技有限公司 | A kind of bonding gold wire and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN104299954B (en) | 2017-11-24 |
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Effective date of registration: 20210720 Address after: 528400 1st floor, building 6, No.1 MuLinSen Avenue, Xiaolan Town, Zhongshan City, Guangdong Province Patentee after: Zhongshan MuLinSen Microelectronics Co.,Ltd. Address before: 528415 Zhongshan, Guangdong, Zhongshan, Xiaolan Town, 1 Patentee before: MLS Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 528400 1st floor, building 6, No.1 MuLinSen Avenue, Xiaolan Town, Zhongshan City, Guangdong Province Patentee after: Zhongshan Zhuoman Microelectronics Co.,Ltd. Address before: 528400 1st floor, building 6, No.1 MuLinSen Avenue, Xiaolan Town, Zhongshan City, Guangdong Province Patentee before: Zhongshan MuLinSen Microelectronics Co.,Ltd. |
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