CN105463237B - A kind of Kufil bonding wire and preparation method thereof - Google Patents
A kind of Kufil bonding wire and preparation method thereof Download PDFInfo
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- CN105463237B CN105463237B CN201510880814.3A CN201510880814A CN105463237B CN 105463237 B CN105463237 B CN 105463237B CN 201510880814 A CN201510880814 A CN 201510880814A CN 105463237 B CN105463237 B CN 105463237B
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
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Abstract
The present invention is a kind of Kufil bonding wire, and as the wt% of silver content 0.1~5 of master alloying, as rare earth element content≤15ppm of microalloy, surplus is the copper as base material.Bonding wire base material is high purity copper, and intensity is high, conductive, good heat conductivity；Main alloying component is silver, and hardness is low, good in oxidation resistance, reduces the oxidation rate of copper wire；Microalloy adulterates, and surface segregation passivation, further reduces copper wire oxidation rate, and crystal grain thinning, enhances the processing characteristics in drawing process.
Description
Technical field
The present invention relates to a kind of alloy bonding silk being used primarily in microelectronics Packaging process, and in particular to a kind of Kufil
Gold bonding silk.The invention further relates to the preparation method of the Kufil bonding wire.
Background technology
As integrated circuit and discrete device are to encapsulation multilead, high integration and miniaturization, semiconductor packages
It is required that carrying out the bonding of thin space, long range with thinner bonding wire, the technical indicator of semiconductor packages enterprise para-linkage silk carries
Low long arc, high temperature resistant, the ultra-fine higher and higher requirement such as high-strength are gone out.Meanwhile to reduce the shadow that the high cost of bonding gold wire is brought
Ring, each production firm accelerates the research and development paces to inexpensive bonding wire.
Copper wire has the heat conduction more excellent than spun gold, electric conductivity, and fracture load and more rigid is being molded and encapsulated
More excellent ball neck intensity and higher camber line stability, intermetallic compound can be obtained in journey（IMC）It is slow-growing, with base
Combination between bottom is stable, and cost is low；But copper wire is oxidizable, long-term use reduces the reliability of device.
At present be conventionally used for solve copper wire problem of oxidation be prepare plating palladium copper bonding wire, using plate palladium layers isolation copper wire with
The contact of air, its oxidation rate is reduced, but in ball bonding process is burnt, due to plating palladium layers and the recrystallization temperature of base material copper wire
Difference, it is bad that duck hook etc. easily occurs；Easily chip is damaged and plating palladium copper wire hardness is high, during bonding, cause silicon crater and
Chip cracks.Therefore, it is very necessary to invent a kind of Kufil bonding wire that can solve copper wire problem of oxidation.
The content of the invention
It is prepared the technical problem to be solved by the invention is to provide a kind of Kufil bonding wire and preparation method thereof
Bonding wire intensity it is high, conductive, good heat conductivity；Hardness is low, good in oxidation resistance；And there is more preferable Wire Drawing performance.
Technical scheme is as follows used by solving the technical problem of the existing present invention：
A kind of Kufil bonding wire, it is characterised in that：As the wt % of silver content 0.1~5 of master alloying, as micro
Rare earth element content≤15ppm of alloy, surplus are the copper as base material.
Rare earth element content as microalloy is preferably 3~15ppm.
The preparation method of described Kufil bonding wire, it is characterised in that be prepared according to following steps：
1）, raw material：The raw material of selection more than 99.999%；Or using purifying technique, the purity of raw material is set to reach 99.999%
More than；
2）, alloy：Mixed by high purity copper and high purity silver, or by high purity copper, silver and trace alloying element, by prealloy
And foundry alloy, prepare alloy pig material；
3）, cast：By vacuum continuous drawing casting technique, by the founding of alloy pig material into Kufil rod；
4）, wire drawing：Kufil rod is pulled into the silk thread of required line footpath by wire drawing machine；
5）, annealing.
Wherein step 2）In alloy, alloy temperature is 1100~1600 DEG C, two step vacuum intermediate-frequency alloys, to ensure alloy
Uniformity and product stability.
Wherein step 3）In cast, cast temperature is 1080~1300 DEG C, using continuous drawing casting mode, is closed with road after guarantee
The excellent machinability of spun gold.
Wherein step 5）Annealing in, the annealing temperature of finished product line footpath B alloy wire is 450~650 DEG C.
The present invention has advantages below：
Firstth, bonding wire base material is high purity copper, and intensity is high, conductive, good heat conductivity；Main alloying component is silver, firmly
Low, good in oxidation resistance is spent, reduces the oxidation rate of copper wire；Microalloy adulterates, and surface segregation passivation, further reduces copper wire
Oxidation rate, and crystal grain thinning, enhance the processing characteristics in drawing process.
Secondth, Kufil bonding wire intensity is high, can be well adapted for thin space, low long arc, high temperature resistant and ultra-fine height
Strong bonding trend requirement.
3rd, compared with plating palladium is anti-oxidation, Kufil bonding wire burns ball evenly in use, will not be because inside and outside
Crystallization temperature difference causes duck hook phenomenon between layer metal, and hardness is low, reduces the damage to chip, usability in bonding process
Can be more stable, the scope of application is more extensive.
Brief description of the drawings
The antioxygenic property of Kufil bonding wire prepared by Fig. 1 embodiment of the present invention 1, embodiment 2 and fine copper silk contrasts
Design sketch.
Embodiment
With reference to embodiment, the invention will be further described.
Embodiment 1：A kind of a diameter of 20 μm（0.8mil）Kufil bonding wire, form each composition of material of bonding wire
Percentage by weight is：
Master alloying Ag（Silver）Dosage is 0.5%, microalloy Ce（Cerium）Dosage is 5ppm, and surplus is base material Cu（Copper）.
Its preparation method comprises the following steps：
The first step, raw material：Selection reaches the copper, silver, cerium raw material of more than 99.999% high-purity；
Second step, alloy：According to alloying component, using nitrogen as protective gas at 1250 ± 5 DEG C, prealloy, mother are prepared
Alloy；
3rd step, cast：Vacuum continuous drawing casting technique, copper of the founding into a diameter of 8 ± 0.3mm are carried out at 1200 ± 5 DEG C
Silver alloy rod；
4th step, wire drawing：Kufil rod is first passed through into rough equipment and is drawn into a diameter of 1.55mm B alloy wire, then is led to
The B alloy wire that middle drawing equipment is drawn into a diameter of 0.26mm is crossed, it is final to be drawn into a diameter of 20 μm using thin drawing, ultra-fine drawing equipment
Kufil spun gold；
5th step, annealing：Silver alloy wire is made annealing treatment on the annealing device that temperature is 600 ± 10 DEG C, to disappear
Except the internal stress of B alloy wire, it is allowed to not produce distortion, bending, adjustment mechanical performance, disruptive force BL ＞ 7gf, elongation percentage E/L 13 ~
17%；
6th step, coiling：Required according to product length, divide the small axle for being coiled into different length；
7th step, the examination and test of products：Alloy bonding silk surface condition is examined with the light microscope that multiplication factor is 250 times,
Observation has flawless and impurity；The unwrapping wire and stress situation of bonding wire are examined with pay-off equipment；Examined with universal testing machine
Whether the mechanical performance of bonding wire meets the requirements, and its requirement is：Disruptive force B/L ＞ 7gf, elongation percentage E/L 13 ~ 17%；
It is prepared by the 8th step, finished product：Qualified Kufil bonding wire product will be examined to be packed as requested, examined not
Qualified product scraps storage after pasting unqualified label.
Embodiment 2：A kind of a diameter of 30 μm（1.2mil）Kufil bonding wire, form each composition of material of bonding wire
Percentage by weight is：
Master alloying Ag（Silver）Dosage is 4.0%, and surplus is base material Cu（Copper）.
Its preparation method comprises the following steps：
The first step, raw material：Selection reaches copper, the silver material of more than 99.999% high-purity；
Second step, alloy：According to alloying component, using nitrogen as protective gas at 1200 ± 5 DEG C, prealloy, mother are prepared
Alloy；
3rd step, cast：Vacuum continuous drawing casting technique, copper of the founding into a diameter of 8 ± 0.3mm are carried out at 1150 ± 5 DEG C
Silver alloy rod；
4th step, wire drawing：Kufil rod is first passed through into rough equipment and is drawn into a diameter of 1.55mm B alloy wire, then is led to
The B alloy wire that middle drawing equipment is drawn into a diameter of 0.26mm is crossed, it is final to be drawn into a diameter of 20 μm using thin drawing, ultra-fine drawing equipment
Kufil spun gold；
5th step, annealing：Silver alloy wire is made annealing treatment on the annealing device that temperature is 550 ± 10 DEG C, to disappear
Except the internal stress of B alloy wire, it is allowed to not produce distortion, bending, adjusts mechanical performance, disruptive force BL ＞ 17gf, elongation percentage E/L 18
~22%；
6th step, coiling：Required according to product length, divide the small axle for being coiled into different length；
7th step, the examination and test of products：Alloy bonding silk surface condition is examined with the light microscope that multiplication factor is 250 times,
Observation has flawless and impurity；The unwrapping wire and stress situation of bonding wire are examined with pay-off equipment；Examined with universal testing machine
Whether the mechanical performance of bonding wire meets the requirements, and its requirement is：Disruptive force B/L ＞ 17gf, elongation percentage E/L 18 ~ 22%；
It is prepared by the 8th step, finished product：Qualified Kufil bonding wire product will be examined to be packed as requested, examined not
Qualified product scraps storage after pasting unqualified label.
Kufil bonding wire prepared by the present invention, can reach following technical indicator：
In embodiment 1, Kufil bonding wire BL average values can reach 9.8gf, and EL average values can reach 15.6%；
In embodiment 2, Kufil bonding wire BL average values can reach 21.1% up to 18.3gf, EL average values.At 150 DEG C, 100%
The antioxygenic property of identical line footpath bonding wire is tested under humidity as shown in Figure 1.As shown in Figure 1, fine copper silk is opened after 12h
Raw oxidation reaction is originated, the weight of copper wire substantially increases, and reaction speed is very fast, reacts complete after 72 hours, weight is not further added by.
Oxidation reaction took place in embodiment 1 and embodiment 2 after 84 hours, and reaction rate is substantially slower than fine copper silk, after 168 hours
The oxidation ratio of copper wire accounts for 50%, and inoxidizability is good.
The equipment such as described casting furnace, wire drawing machine, annealing furnace, bonding wire pay-off equipment, universal testing machine, are all normal
Advise bonding wire production to prepare and examine equipment, its application method is also known by those of ordinary skill in the art.
Claims (1)
1. a kind of Kufil bonding wire, it is characterised in that each composition by weight percent of material for forming bonding wire is：
Master alloying Ag dosages are 0.5%, and microalloy Ce dosages are 5ppm, and surplus is base material Cu；
Its preparation method comprises the following steps：
The first step, raw material：Selection reaches the copper, silver, cerium raw material of more than 99.999% high-purity；
Second step, alloy：According to alloying component, using nitrogen as protective gas at 1250 ± 5 DEG C, prealloy, foundry alloy are prepared；
3rd step, cast：Vacuum continuous drawing casting technique, Kufil of the founding into a diameter of 8 ± 0.3mm are carried out at 1200 ± 5 DEG C
Golden rod；
4th step, wire drawing：Kufil rod is first passed through into the B alloy wire that rough equipment is drawn into a diameter of 1.55mm, then in
Equipment is drawn to be drawn into a diameter of 0.26mm B alloy wire, it is final to utilize thin drawing, the ultra-fine copper for drawing equipment to be drawn into a diameter of 20 μm
Silver alloy wire；
5th step, annealing：Silver alloy wire is made annealing treatment on the annealing device that temperature is 600 ± 10 DEG C, closed with eliminating
The internal stress of spun gold, it is allowed to not produce distortion, bending, adjustment mechanical performance, disruptive force B/L ＞ 7gf, elongation percentage E/L 13 ~
17%；
6th step, coiling：Required according to product length, divide the small axle for being coiled into different length；
7th step, the examination and test of products：Alloy bonding silk surface condition, observation are examined with the light microscope that multiplication factor is 250 times
There are flawless and impurity；The unwrapping wire and stress situation of bonding wire are examined with pay-off equipment；Examined and be bonded with universal testing machine
Whether the mechanical performance of silk meets the requirements, and its requirement is：Disruptive force B/L ＞ 7gf, elongation percentage E/L 13 ~ 17%；
It is prepared by the 8th step, finished product：Qualified Kufil bonding wire product will be examined to be packed as requested, disqualified upon inspection
Product paste unqualified label after scrap storage.
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| CN107195608A (en) * | 2017-06-15 | 2017-09-22 | 滕州晨晖电子集团股份有限公司 | A kind of copper microalloy bonding line and preparation method thereof |
| CN107904434B (en) * | 2017-11-24 | 2020-03-31 | 昆明贵金属研究所 | Ultra-fine and ultra-long copper alloy wire and production method thereof |
| CN108265194A (en) * | 2018-01-09 | 2018-07-10 | 北京有色金属研究总院 | A kind of railway power through track copper alloy conductor and preparation method thereof |
| CN108823463A (en) * | 2018-06-30 | 2018-11-16 | 汕头市骏码凯撒有限公司 | One Albatra metal bonding wire and its manufacturing method |
| CN109273055B (en) * | 2018-08-15 | 2021-12-03 | 北京康普锡威科技有限公司 | Method for judging alloy surface segregation state and method for manufacturing alloy |
| CN110718526A (en) * | 2019-10-22 | 2020-01-21 | 烟台一诺电子材料有限公司 | Rare earth copper alloy bonding wire for superfine linear pitch electronic packaging and preparation method thereof |
| CN113549785B (en) * | 2021-07-27 | 2022-04-26 | 四川威纳尔特种电子材料有限公司 | Bonding copper-silver alloy wire and preparation method and application thereof |
| CN116656998B (en) * | 2023-07-31 | 2023-10-10 | 烟台一诺电子材料有限公司 | Silver bonding wire and processing method thereof |
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| WO2007046378A1 (en) * | 2005-10-17 | 2007-04-26 | National Institute For Materials Science | Cu-Ag ALLOY WIRE HAVING HIGH STRENGTH AND HIGH CONDUCTIVITY AND METHOD FOR MANUFACTURE THEREOF |
| JP2010502841A (en) * | 2006-09-08 | 2010-01-28 | トーソー エスエムディー，インク． | Copper sputtering target having very small crystal grain size and high electromigration resistance and method for producing the same |
| JP5045784B2 (en) * | 2010-05-14 | 2012-10-10 | 三菱マテリアル株式会社 | Copper alloy for electronic equipment, method for producing copper alloy for electronic equipment, and rolled copper alloy material for electronic equipment |
| SG190481A1 (en) * | 2011-12-01 | 2013-06-28 | Heraeus Materials Tech Gmbh | Alloyed 2n copper wire for bonding in microelectronics device |
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Denomination of invention: Copper-silver alloy bonding wire and manufacturing method thereof Effective date of registration: 20200218 Granted publication date: 20171201 Pledgee: Shanghai Pudong Development Bank Limited by Share Ltd Yantai branch Pledgor: Yantai YesNo Electronic Materials Co., Ltd. Registration number: Y2020980000263 |
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Date of cancellation: 20201214 Granted publication date: 20171201 Pledgee: Shanghai Pudong Development Bank Limited by Share Ltd. Yantai branch Pledgor: YANTAI YESNO ELECTRONIC MATERIALS Co.,Ltd. Registration number: Y2020980000263 |
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Denomination of invention: A copper silver alloy bonding wire and its preparation method Effective date of registration: 20201221 Granted publication date: 20171201 Pledgee: Shanghai Pudong Development Bank Limited by Share Ltd. Yantai branch Pledgor: YANTAI YESNO ELECTRONIC MATERIALS Co.,Ltd. Registration number: Y2020980009638 |